IRF640, RF1S640SM. 18A, 200V, Ohm, N-Channel Power MOSFETs. Features. Title F64. 1S6 SM) b- t A, 0V, 80 m, Ordering Information. Symbol.

Transcription

1 IRF64, RF64M Data heet June 999 File Number Title F64 6 M) b t A, V, 8 m, anwer O Ts) uthor 8A, 2V,.8 Ohm, NChannel Power MOFETs These are NChannel enhancement mode silicon gate power field effect transistors. They are advanced power MOFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA7422. Ordering Information PART NUMBER PACKAE BRAND IRF64 TO22AB IRF64 RF64M TO263AB RF64 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO263AB variant in the tape and reel, i.e., RF64M9A. Features 8A, 2V r D(ON) =.8Ω ingle Pulse Avalanche Energy Rated OA is Power Dissipation Limited Nanosecond witching peed Linear Transfer Characteristics High Input Impedance Related Literature TB334 uidelines for oldering urface Mount Components to PC Boards ymbol D eyrds ter Coratio N an Packaging DRAIN (FLANE) JEDEC TO22AB OURCE DRAIN ATE ATE OURCE JEDEC TO263AB DRAIN (FLANE) wer O Ts, AB, 3AB) e r () OCI O rk 2 Fairchild emiconductor Corporation IRF64, RF64M Rev. A

2 IRF64, RF64M Absolute Maximum Ratings T C = 25 o C, Unless Otherwise pecified IRF64, RF64M UNIT Drain to ource Breakdown Voltage (Note ) V Drain to ate Voltage (R = 2kΩ) (Note ) V DR 2 V Continuous Drain Current I D T C = o C I D 8 A A Pulsed Drain Current (Note 3) I DM 72 A ate to ource Voltage V ±2 V Maximum Power Dissipation P D 25 W Dissipation Derating Factor W/ o C ingle Pulse Avalanche Energy Rating (Note 4) E A 58 mj Operating and torage Temperature T J, T T 55 to 5 o C Maximum Temperature for oldering Leads at.63in (.6mm) from Case for s T L 3 Package Body for s, ee TB T pkg 26 o C o C CAUTION: tresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE:. T J = 25 o C to 25 o C. Electrical pecifications T C = 25 o C, Unless Otherwise pecified PARAMETER YMBOL TET CONDITION MIN TYP MAX UNIT Drain to ource Breakdown Voltage B I D = 25µA, V = V, (Figure ) 2 V ate Threshold Voltage V (TH) V =, I D = 25µA 2 4 V Zero ate Voltage Drain Current I D = Rated B, V = V 25 µa =.8 x Rated B, V = V, T J = 25 o C 25 µa Ontate Drain Current (Note ) I D(ON) > I D(ON) x r D(ON)MAX, V = V (Figure 7) 8 A ate to ource Leakage Current I V = ±2V ± na Drain to ource On Resistance (Note ) r D(ON) I D = A, V = V (Figures 8, 9).4.8 Ω Forward Transconductance (Note ) g fs V, I D = A (Figure 2) 6.7 TurnOn Delay Time t d(on) = V, I D 8A, R = 9.Ω, R L = 5.4Ω, 3 2 ns Rise Time t MOFET witching Times are Essentially r 5 77 ns Independent of Operating Temperature TurnOff Delay Time t d(off) ns Fall Time t f ns Total ate Charge (ate to ource + ate to Drain) Q g(tot) V = V, I D 8A, =.8 x Rated B (Figure 4) ate Charge is Essentially Independent of Operating Temperature I (REF) =.5mA nc ate to ource Charge Q gs 8 nc ate to Drain Miller Charge Q gd 22 nc Input Capacitance C I = 25V, V = V, f = MHz (Figure ) 275 pf Output Capacitance C O 4 pf Reverse Transfer Capacitance C R pf Internal Drain Inductance L D Measured From the Contact crew on Tab to Center of Die Measured From the Drain Lead, 6mm (.25in) From Package to Center of Die Internal ource Inductance L Measured From the ource Lead, 6mm (.25in) from Header to ource Bonding Pad Modified MOFET ymbol howing the Internal Devices Inductances D 3.5 nh 4.5 nh 7.5 nh Thermal Resistance Junction to Case R θjc o C/W Thermal Resistance Junction to Ambient R θja Free Air Operation, IRF64 62 o C/W R θja RF64M Mounted on FR4 Board with 62 o C/W Minimum Mounting Pad L D L 2 Fairchild emiconductor Corporation IRF64, RF64M Rev. A

3 IRF64, RF64M ource to Drain Diode pecifications PARAMETER YMBOL TET CONDITION MIN TYP MAX UNIT Continuous ource to Drain Current I D Modified MOFET D 8 A Pulse ource to Drain Current I ymbol howing the DM 72 A (Note 2) Integral Reverse PN Junction Diode ource to Drain Diode Voltage (Note 2) V D T J = 25 o C, I D = 8A, V = V, (Figure 3) 2. V Reverse Recovery Time t rr T J = 25 o C, I D = 8A, di D /dt = A/µs ns Reverse Recovery Charge Q RR T J = 25 o C, I D = 8A, di D /dt = A/µs µc NOTE: 2. Pulse Test: Pulse width 3µs, duty cycle 2%. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. ee Transient Thermal Impedance curve (Figure 3). 4. = 5V, starting T J = 25 o C, L = 3.37mH, R = 25Ω, peak I A = 8A. Typical Performance Curves Unless Otherwise pecified.2 2 POWER DIIPATION MULTIPLIER T C, CAE TEMPERATURE ( o C) T C, CAE TEMPERATURE ( o C) FIURE. NORMALIZED POWER DIIPATION vs CAE TEMPERATURE FIURE 2. MAXIMUM CONTINUOU DRAIN CURRENT vs CAE TEMPERATURE Z θjc, TRANIENT THERMAL IMPEDANCE ( o C/W) INLE PULE t P, RECTANULAR PULE DURATION (s) P DM t t 2 NOTE: DUTY FACTOR: D = t /t 2 PEAK T J = P DM x Z θjc + T C FIURE 3. MAXIMUM TRANIENT THERMAL IMPEDANCE 2 Fairchild emiconductor Corporation IRF64, RF64M Rev. A

4 IRF64, RF64M Typical Performance Curves Unless Otherwise pecified (Continued) OPERATION IN THI AREA MAY BE LIMITED BY r D(ON) T C = 25 o C µs µs ms ms T C = 25 o C DC T J = MAX RATED INLE PULE, DRAIN TO OURCE VOLTAE (V) V 8V PULE DURATION = 8µs DUTY CYCLE =.5% MAX 4V , DRAIN TO OURCE VOLTAE (V) 7V 6V 5V 6 FIURE 4. FORWARD BIA AFE OPERATIN AREA FIURE 5. OUTPUT CHARACTERITIC PULE DURATION = 8µs DUTY CYCLE =.5% MAX V = 4V V = V V = 8V V = 7V V = 6V V = 5V PULE DURATION = 8µs DUTY CYCLE =.5% MAX 5V 5 o C 25 o C , DRAIN TO OURCE VOLTAE (V) FIURE 6. ATURATION CHARACTERITIC V, ATE TO OURCE VOLTAE (V) FIURE 7. TRANFER CHARACTERITIC r D(ON), DRAIN TO OURCE ON REITANCE (Ω) PULE DURATION = 8µs DUTY CYCLE =.5% MAX V = V V = 2V NORMALIZED DRAIN TO OURCE ON REITANCE PULE DURATION = 8µs DUTY CYCLE =.5% MAX V = V, I D = 8A T J, JUNCTION TEMPERATURE ( o C) FIURE 8. DRAIN TO OURCE ON REITANCE vs ATE VOLTAE AND DRAIN CURRENT FIURE 9. NORMALIZED DRAIN TO OURCE ON REITANCE vs JUNCTION TEMPERATURE 2 Fairchild emiconductor Corporation IRF64, RF64M Rev. A

5 IRF64, RF64M Typical Performance Curves Unless Otherwise pecified (Continued) NORMALIZED DRAIN TO OURCE BREAKDOWN VOLTAE I D = 25µA C, CAPACITANCE (pf) V = V, f = MHz C I C O C R C I = C + C D C R = C D C O C D + C D T J, JUNCTION TEMPERATURE ( o C), DRAIN TO OURCE VOLTAE (V) FIURE. NORMALIZED DRAIN TO OURCE BREAKDOWN VOLTAE vs JUNCTION TEMPERATURE FIURE. CAPACITANCE vs DRAIN TO OURCE VOLTAE g fs, TRANCONDUCTANCE () PULE DURATION = 8µs DUTY CYCLE =.5% MAX 25 o C 5 o C I D, OURCE TO DRAIN CURRENT (A) PULE DURATION = 8µs DUTY CYCLE =.5% MAX 5 o C 25 o C V D, OURCE TO DRAIN VOLTAE (V) FIURE 2. TRANCONDUCTANCE vs DRAIN CURRENT FIURE 3. OURCE TO DRAIN DIODE VOLTAE V, ATE TO OURCE VOLTAE (V) 2 I D = 28A V 6 D = 4V = V 2 = 6V Q g, ATE CHARE (nc) 75 FIURE 4. ATE TO OURCE VOLTAE vs ATE CHARE 2 Fairchild emiconductor Corporation IRF64, RF64M Rev. A

6 IRF64, RF64M Test Circuits and Waveforms B L t P VARY t P TO OBTAIN REQUIRED PEAK I A V R + I A DUT V t P I A.Ω t AV FIURE 5. UNCLAMPED ENERY TET CIRCUIT FIURE 6. UNCLAMPED ENERY WAVEFORM t ON t d(on) t OFF t d(off) R L t r t f 9% 9% + R % % DUT 9% V V % 5% PULE WIDTH 5% FIURE 7. WITCHIN TIME TET CIRCUIT FIURE 8. REITIVE WITCHIN WAVEFORM CURRENT REULATOR (IOLATED UPPLY) 2V BATTERY.2µF 5kΩ.3µF AME TYPE A DUT Q gs Q gd Q g(tot) V D DUT I (REF) I CURRENT AMPLIN REITOR I D CURRENT AMPLIN REITOR I (REF) FIURE 9. ATE CHARE TET CIRCUIT FIURE 2. ATE CHARE WAVEFORM 2 Fairchild emiconductor Corporation IRF64, RF64M Rev. A