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1 Is Now Part of To learn more about ON emiconductor, please visit our website at ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

2 FM767 N-Channel PowerTrench MOFET 3 V, 5. mω Features General escription This N-Channel MOFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of C/C converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r(on), fast switching speed and body diode reverse recovery performance. Max r(on) = 5. mω at VG = V, I = 9 A Max r(on) = 6.9 mω at VG =.5 V, I = 5 A Advanced Package and ilicon design for low r(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery. Provides chottky-like performance with minimum EMI in sync buck converter applications Applications IMVP Vcore witching for Notebook ML robust package design VRM Vcore witching for esktop and erver % UIL tested OringFET / Load witch RoH Compliant C-C Conversion Bottom Top Pin G 5 G Power 56 MOFET Maximum Ratings TA = 5 C unless otherwise noted ymbol V rain to ource Voltage Parameter VG Gate to ource Voltage (Note ) rain Current -Continuous (Package limited) I TC = 5 C -Continuous (ilicon limited) TC = 5 C -Continuous TA = 5 C P TJ, TTG Units V ± V 8 8 (Note a) 9 (Note 3) 7 -Pulsed A 9 ingle Pulse Avalanche Energy EA Ratings 3 Power issipation TC = 5 C Power issipation TA = 5 C 8 (Note a) Operating and torage Junction Temperature Range.5-55 to +5 mj W C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient.6 (Note a) 5 C/W Package Marking and Ordering Information evice Marking FM767 evice FM767 9 Fairchild emiconductor Corporation FM767 Rev. Package Power 56 Reel ize 3 Tape Width mm Quantity 3 units FM767 N-Channel PowerTrench MOFET October

3 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = 5 µa, V G = V 3 V BV Breakdown Voltage Temperature I T J Coefficient = 5 µa, referenced to 5 C 5 mv/ C I Zero Gate Voltage rain Current V = V, V G = V µa I G Gate to ource Leakage Current, Forward V G = V, V = V na On Characteristics V G(th) Gate to ource Threshold Voltage V G = V, I = 5 µa V V G(th) T J r (on) Gate to ource Threshold Voltage Temperature Coefficient tatic rain to ource On Resistance ynamic Characteristics I = 5 µa, referenced to 5 C -7 mv/ C V G = V, I = 9 A V G =.5 V, I = 5 A V G = V, I = 9 A, T J = 5 C g F Forward Transconductance V = 5 V, I = 9 A 6 C iss Input Capacitance 5 96 pf V = 5 V, V G = V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance 9 3 pf R g Gate Resistance.7.5 Ω mω FM767 N-Channel PowerTrench MOFET witching Characteristics t d(on) Turn-On elay Time 3 3 ns t r Rise Time V = 5 V, I = 9 A, 5 ns t d(off) Turn-Off elay Time V G = V, R GEN = 6 Ω 5 ns t f Fall Time ns Q g Total Gate Charge V G = V to V Q g Total Gate Charge V G = V to.5 V V = 5 V, 9 nc Q gs Gate to ource Charge I = 9 A 7.6 nc rain-ource iode Characteristics 3 nc Q gd Gate to rain Miller Charge 3.7 nc V ource to rain iode Forward Voltage V G = V, I =. A (Note ).7.95 V G = V, I = 9 A (Note ).8. t rr Reverse Recovery Time 3 5 ns Q rr Reverse Recovery Charge nc t a Reverse Recovery Fall Time I F = 9 A, di/dt = A/µs 5 nc t b Reverse Recovery Rise Time 7 nc oftness (t b /t a ). t rr Reverse Recovery Time 6 ns I F = 9 A, di/dt = 3 A/µs Q rr Reverse Recovery Charge 5 nc Notes:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. V a. 5 C/W when mounted on a in pad of oz copper. b. 5 C/W when mounted on a minimum pad of oz copper.. Pulse Test: Pulse Width < 3 µs, uty cycle <.%. 3. E A of 7 mj is based on starting T J = 5 C, L = mh, I A = A, V = 7 V, V G = V. % test at L =.3 mh, I A = 7 A.. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FM767 Rev.

4 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE Figure. I = 9 A V G = V V G = V V G = 5 V V G =.5 V V G = V PULE URATION = 8 µs UTY CYCLE =.5% MAX V, RAIN TO OURCE VOLTAGE (V) V G = 3.5 V NORMALIZE RAIN TO OURCE ON-REITANCE I, RAIN CURRENT (A) On Region Characteristics Figure. Normalized On-Resistance vs rain Current and Gate Voltage T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (mω) V G = 3.5 V I = 9 A T J = 5 o C PULE URATION = 8 µs UTY CYCLE =.5% MAX V G = 5 V T J = 5 o C V G = V V G =.5 V V G = V PULE URATION = 8 µs UTY CYCLE =.5% MAX 6 8 V G, GATE TO OURCE VOLTAGE (V) FM767 N-Channel PowerTrench MOFET Figure 3. Normalized On Resistance vs Junction Temperature Figure. On-Resistance vs Gate to ource Voltage I, RAIN CURRENT (A) PULE URATION = 8 µs UTY CYCLE =.5% MAX V = 5 V T J = 5 o C T J = 5 o C T J = -55 o C I, REVERE RAIN CURRENT (A).. V G = V T J = 5 o C T J = 5 o C T J = -55 o C 3 5 V G, GATE TO OURCE VOLTAGE (V) V, BOY IOE FORWAR VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. ource to rain iode Forward Voltage vs ource Current FM767 Rev. 3

5 Typical Characteristics T J = 5 C unless otherwise noted VG, GATE TO OURCE VOLTAGE (V) 8 6 I = 9 A Figure 7. V = V Q g, GATE CHARGE (nc) V = V V = 5 V f = MHz 5 V G = V C rss. 3 V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage CAPACITANCE (pf) 5 9 C iss C oss FM767 N-Channel PowerTrench MOFET IA, AVALANCHE CURRENT (A) T J = 5 o C T J = 5 o C T J = o C I, RAIN CURRENT (A) 6 3 Limited by Package V G =.5 V V G = V R θjc =.6 o C/W.. t AV, TIME IN AVALANCHE (ms) T C, CAE TEMPERATURE ( o C) Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) µs ms ms THI AREA I LIMITE BY r (on) ms INGLE PULE s. T J = MAX RATE s R θja = 5 o C/W C T A = 5 o C... V, RAIN to OURCE VOLTAGE (V) P(PK), PEAK TRANIENT POWER (W) V G = V INGLE PULE R θja = 5 o C/W T A = 5 o C t, PULE WITH (sec) Figure. Forward Bias afe Operating Area Figure. ingle Pulse Maximum Power issipation FM767 Rev.

6 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja UTY CYCLE-ECENING ORER = Figure 3. INGLE PULE R θja = 5 o C/W t, RECTANGULAR PULE URATION (sec) P M t t NOTE: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A Junction-to-Ambient Transient Thermal Response Curve Figure 5. FM767 N-Channel PowerTrench MOFET CURRENT (A) 6 8 di/dt = 3 A/µs TIME (n) Figure. Body iode Reverse Recovery Characteristics FM767 Rev. 5

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8 ON emiconductor and are trademarks of emiconductor Components Industries, LLC dba ON emiconductor or its subsidiaries in the United tates and/or other countries. ON emiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON emiconductor s product/patent coverage may be accessed at Marking.pdf. ON emiconductor reserves the right to make changes without further notice to any products herein. ON emiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON emiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON emiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON emiconductor. Typical parameters which may be provided in ON emiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON emiconductor does not convey any license under its patent rights nor the rights of others. ON emiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. hould Buyer purchase or use ON emiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON emiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON emiconductor was negligent regarding the design or manufacture of the part. ON emiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON emiconductor 95 E. 3nd Pkwy, Aurora, Colorado 8 UA Phone: or Toll Free UA/Canada Fax: or Toll Free UA/Canada orderlit@onsemi.com emiconductor Components Industries, LLC N. American Technical upport: Toll Free UA/Canada Europe, Middle East and Africa Technical upport: Phone: Japan Customer Focus Center Phone: ON emiconductor Website: Order Literature: For additional information, please contact your local ales Representative

9 Mouser Electronics Authorized istributor Click to View Pricing, Inventory, elivery & Lifecycle Information: Fairchild emiconductor: FM767