Symbol Parameter/Test Conditions Values Unit T C = T C =95 450

Transcription

1 17 A IGBT Module May 215 ersion 1 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(17 Trench+Field Stop technology) Low turn-off losses, short tail current CE(sat) with positive temperature coefficient DIODE CHIP(17 EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature see included APPLICATIONS AC motor control Motion/servo control Inverter and power supplies Photovoltaic/Fuel cell ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditio alues Unit CES Collector Emitter oltage T J =25 17 GES Gate Emitter oltage ±2 I C DC Collector Current T C =25 T C =95 I CM Repetitive Peak Collector Current tp=1ms P tot Power Dissipation Per IGBT 27 A W Diode-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditio alues Unit RRM Repetitive Reverse oltage T J =25 17 I F(A) Average Forward Current T C =25 I FRM Repetitive Peak Forward Current tp=1ms I 2 t, t=1ms, R = 2 A A 2 S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R.of China Tel.: Fax: Post Code:21322 Website: 1

2 ELECTRICAL CHARACTERISTICS Symbol Parameter/Test Conditio Min. Typ. Max. Unit GE(th) Gate Emitter Threshold oltage CE = GE, I C =18mA CE(sat) Collector Emitter I C =A, GE =15, T J = Saturation oltage chip I C =A, GE =15, 2.4 I CES Collector Leakage Current CE =17, GE =, T J =25 3 ma CE =17, GE =, 2 ma I GES Gate Leakage Current CE =, GE =±15, T J = na R gint Q g Integrated Gate Resistor Gate Charge CE =, I C =A, GE =± Ω µc C ies Input Capacitance 4.5 nf CE =25, GE =, f =1MHz C res Reverse Trafer Capacitance 1.3 nf CC =,I C =A T J =25 28 t d(on) Turn on Delay Time R G =3.3Ω, GE =±15, Inductive Load T J =25 8 t r Rise Time 1 CC =,I C =A T J =25 81 t d(off) Turn off Delay Time R G =3.3Ω, 1 GE =±15, Inductive Load T J =25 18 t f Fall Time CC =,I C =A T J = E on Turn on Energy R G =3.3Ω, 14 GE =±15, Inductive Load T J =25 96 E off Turn off Energy 14 I SC Short Circuit Current tpsc 1µS, GE =15, CC =1 18 A R thjc Junction to Case Thermal Resistance ( Per IGBT).55 K /W Diode-inverter ELECTRICAL CHARACTERISTICS Symbol Parameter/Test Conditio Min. Typ. Max. Unit I F =A, GE =, T J = F Forward oltage chip I F =A, GE =, 1.9 I RRM Max. Reverse Recovery Current I F =A, R = 57 Q di F /dt=-a/μs RR Reverse Recovery Charge 195 E rec Reverse Recovery Energy 11 R thjcd Junction to Case Thermal Resistance ( Per Diode).1 A µc K /W NTC CHARACTERISTICS Symbol Parameter/Test Conditio Min. Typ. Max. Unit R 25 Resistance T C =25 5 KΩ B 25/5 R 2 = R 25 exp [B 25/5 (1/T 2-1/( K))] 3375 K 2

3 MODULE CHARACTERISTICS Symbol Parameter/Test Conditio alues Unit T Jmax Max. Junction Temperature 175 T Jop Operating Temperature -4~ T stg Storage Temperature -4~125 isol Isolation Breakdown oltage AC, 5Hz(R.M.S), t=1minute 4 CTI Comparative Tracking Index >225 Torque to heatsink Recommended(M5) 2.5~5 to terminal Recommended(M6) 3~5 Weight 35 Nm Nm g ge=2 ge=15 ge=12 ge=1 ge= CE () CE () Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics CE = E on E off () CE = I C =A GE =±15 Eon Eoff GE () Rg(Ω) ( ) Figure 3. Typical Trafer Characteristics Figure 4. Switching Energy vs Gate Resistor 3

4 E on E off () CE = R g =3.3Ω GE =±15 Eon Eoff R g =3.3Ω GE =± CE () Figure 5. Switching Energy vs Collector Current Figure 6. Reverse Biased Safe Operating Area DC I F (A) 2 DC T C ( ) Figure 7. Collector Current vs Case temperature IGBT -inverter T C ( ) Figure 8. Forward current vs Case temperature Diode -inverter I F (A) E REC () CE = I F =A F () Rg(Ω) Figure 9. Diode Forward Characteristics Diode -inverter Figure 1. Switching Energy vs Gate Resistor Diode -inverter 4

5 1 E REC () CE = R g =3.3Ω Z thjc (K/W).1.1 IGBT DIODE I F (A) Rectangular Pulse Duration (s) Figure 11. Switching Energy vs Forward Current Diode-inverter Figure 12. Traient Thermal Impedance of Diode and 1 R (Ω) T C ( ) Figure 13. NTC Characteristics NTC Figure 14. Circuit Diagram 5

6 Dimeio in (mm) Figure 15. Package Outline 6