AP2764I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
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1 RoHS-compliant Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET % valanche Test D BV DSS 6V Fast Switching Characteristic R DS(ON).Ω Simple Drive Requirement I D 9 G S Description P76 series are specially designed as main switching devices for universal 9~65VC off-line C/DC converter applications. TO-CFM type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. G D S TO-CFM(I) bsolute Maximum Ratings Symbol Parameter Rating Units V DS Drain-Source Voltage 6 V V GS Gate-Source Voltage +3 V I C =5 Continuous Drain Current, V V 9 I C = Continuous Drain Current, V V 6 I DM Pulsed Drain Current 36 P C =5 Total Power Dissipation 37 W E S Single Pulse valanche Energy mj I R valanche Current 9 T STG Storage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3. /W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 /W Data & specifications subject to change without notice 7
2 Electrical j =5 o C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =m V R DS(ON) Static Drain-Source On-Resistance 3 V GS =V, I D = - -. Ω V GS(th) Gate Threshold Voltage V DS =V GS, I D =5u - V g fs Forward Transconductance V DS =V, I D = S I DSS Drain-Source Leakage Current V DS =V, V GS =V u Drain-Source Leakage Current (T j =5 o C) V DS =V, V GS =V u I GSS Gate-Source Leakage V GS =+3V n Q g Total Gate Charge 3 I D =7-5 nc Q gs Gate-Source Charge V DS =V nc Q gd Gate-Drain ("Miller") Charge V GS =V - - nc t d(on) Turn-on Delay Time 3 V DD =V ns t r Rise Time I D =7-3 - ns t d(off) Turn-off Delay Time R G =5Ω,V GS =V ns t f Fall Time R D =57Ω ns C iss Input Capacitance V GS =V pf C oss Output Capacitance V DS =3V pf C rss Reverse Transfer Capacitance f=.mhz pf Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units V SD Forward On Voltage 3 I S =7, V GS =V V trr Reverse Recovery Time 3 I S =7, V GS =V, ns Qrr Reverse Recovery Charge di/dt=/µs µc Notes:.Pulse width limited by max. junction temperature..starting T j =5 o C, V DD =5V, L=mH, R G =5Ω 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTTIC DISCHRGE, PLESE HNDLE WITH CUTION. USE OF THIS PRODUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZED. PEC DOES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY NY LICENSE UNDER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS. PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PRODUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR DESIGN.
3 I D, Drain Current () 6 T C =5 o C V 6.V 5.V I D, Drain Current () 6 T C =5 o C V 5.V.5V V G =.V V G =.V Fig. Typical Output Characteristics Fig. Typical Output Characteristics. 3 I D = V G =V Normalized BV DSS (V). Normalized R DS(ON) T j, Junction Temperature ( o C) T j, Junction Temperature ( o C ) Fig 3. Normalized BV DSS v.s. Junction Fig. Normalized On-Resistance Temperature v.s. Junction Temperature 3.. I S () T j = 5 o C T j = 5 o C V GS(th) (V) V SD, Source-to-Drain Voltage (V) T j, Junction Temperature ( o C) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 3
4 6 f=.mhz I D =7 C iss V GS, Gate to Source Voltage (V) V DS =V C (pf) C oss C rss 6 Q G, Total Gate Charge (nc) Fig 7. Gate Charge Characteristics Fig. Typical Capacitance Characteristics Duty factor=.5 I D ().. T c =5 o C Single Pulse us ms ms ms s DC Normalized Thermal Response (R thjc ) Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thjc + T C..... t, Pulse Width (s) Fig 9. Maximum Safe Operating rea Fig. Effective Transient Thermal Impedance V DS 9% V G Q G V % V GS Q GS Q GD t d(on) t r t d(off) t f Charge Q Fig. Switching Time Waveform Fig. Gate Charge Waveform
5 Package Outline : TO-CFM DVNCED POWER ELECTRONICS CORP. E SYMBOLS Millimeters MIN NOM MX φ c b b c c E L L L b L3 L φ e ll Dimensions re in Millimeters. L.Dimension Does Not Include Mold Protrusions. b c e Part Marking Information & Packing : TO-CFM LOGO 76I YWWSSS Option Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5
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General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationT C =25 unless otherwise specified
800V N-Channel MOSFET BS = 800 V R DS(on) typ = 3.0 A Dec 2005 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent
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RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
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UNISONIC TECHNOLOGIES CO., LTD 20A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC s advanced technology to provide the customers with a minimum on-state resistance,
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MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
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HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested
More informationT C =25 unless otherwise specified
500V N-Channel MOSFET BS = 500 V R DS(on) typ = 0.22 = 8A Apr 204 FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances
More informationCharacteristic Value Units Drain-to-Source Voltage. 5.6 Continuous Drain Current (T C =100 )
dvanced Power MOSFET IRF510 FETURES n valanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating rea n 175 C Operating Temperature
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MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,
More informationUNISONIC TECHNOLOGIES CO., LTD UFC8N80K
UNISONIC TECHNOLOGIES CO., LTD UFC8N80K 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFC8N80K provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable
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RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary V DS I D R DS(ON) ( at V GS =10V) R DS(ON) ( at V GS =6V) 100% UIS Tested 100% VDS Tested 100V 12A
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UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationUNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the
More informationSSF6602. Main Product Characteristics. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified)
Main Product Characteristics D2 S1 V (BR)DSS 30V -30V D1 58mΩ@10V 100mΩ@-10V G2 R DS(on)MAX 95mΩ@4.5V 150mΩ@-4.5V G1 S2 I D 3.5A -2.7A SOT-23-6L Schematic Diagram Features and Benefits Advanced MOSFET
More informationN-Channel Power MOSFET 600V, 11A, 0.38Ω
N-Channel Power MOSFET 600V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Pb-free plating Compliant
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Main Product Characteristics V DSS R DS(on) I D 650V 0.32Ω (typ.) 11A TO-220F Marking and Pin S c h e m a ti c Dia g r a m Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche
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HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationMDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω
General Description The MDHT7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT7N25 is suitable device for SMPS,
More informationHCS80R1K4E 800V N-Channel Super Junction MOSFET
HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
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UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide
More informationCharacteristic Value Units Drain-to-Source Voltage Continuous Drain Current (T C =100 C)
dvanced Power MOSFET SFF9250L FETURES Logic-Level Gate Drive valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitances Improved Gate Charge Extended Safe Operating rea Lower Leakage
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