Biosensors and Instrumentation: Tutorial 3

Size: px
Start display at page:

Download "Biosensors and Instrumentation: Tutorial 3"

Transcription

1 Biosensors and Instrumentation: Tutorial A schematic cross section of an ion sensitive field effect transistor (ISFET) is shown in figure 1. Vref Solution eference Electrode Encapsulation SiO2 nsi Source nsi Drain psi Figure 1. Schematic cross section through an ISFET 1.1. In this device, how does the value of ph affect the potential at the oxide/solution interface and the effective threshold voltage of the ISFET? 1.2. Equations [1] and [2] define the change the surface potential, and therefore VT, with ph for an ISFET. ΔΨ = 2.3α T [1] F ΔpH bulk where 1 =! (2.3kT/q 2 )(C dl / int )1 [2] Define the term Cdl and describe how it will be affected by changes in the measured solution Define the term βint and why it should be maximised If α=1 what will be the sensitivity δψ/δph at 25 C (298 K)? What type of response does the result of (iii) resemble? Suggest a gate oxide material which has high sensitivity with reasons for your choice 1.3. Figure 2 shows an alternative circuit for biasing and measuring the output of an ISFET ph sensor. Define the ISFET current and voltage IDS and VDS. 1.4.The source-drain current through a MOSFET (or ISFET) in the linear region of operation is given by the equation below. Given that the source drain voltage (VDS) and current (IDS) of an ISFET are kept constant by the op-amp feedback circuit shown in figure 3, what will be the dependence of VGS on VT? V 2 DS I DS = (V GS V T )V DS Given that the effective value of VG is controlled by the reference electrode what will happen to the output voltage Vout if the threshold voltage increases due to a change in the ph of the measured solution?

2 1.6.If the ISFET used has a threshold voltage VT with a ph sensitivity of -58mV/pH at 298K and has been set up so that the output voltage Vout is -1V at ph = 7 what will the output be for a ph of 1 and 12? Design an amplifier to give an output with a ph dependence of 1V/pH. 2 ef. electrode 3 ISFET D S V 1 in 2 V out Figure 2. Source-Drain Follower ISFET circuit 2. Figure 3 shows the ISFET amplifier circuit we looked at in the lecture. We re now going to analyse this in a little more detail. Vdd I in V 1 V ef. electrode 1 ISFET D S DS 1 V 5 V ref out V out V 2 V S I f Figure 3. ISFET Amplifier 2.1. The important voltages are numbered V1...V5 in figure 4. Define each of these in terms of the known voltages and currents in the circuit. Assume that 1 = 2 = 3 =.

3 Vsource (vs. ef) [mv] 2.2. What is the voltage VDS and current IDS of the ISFET? 2.3. Explain how the current IDS is set by controlling the input Vref The calibration routine suggests that the ISFET be placed in a buffer of a known ph (ph 7 typically) while the voltage Vref is adjusted to zero the output voltage Vout. What does this imply about the voltage V2 at this point? What about the output of the final op-amp comparator? 2.5. If the VT of the ISFET is dependent on ph with a sensitivity of 50 mv ph 1 choose appropriate values of S and out to give an output voltage change of 1V ph The O2-FET mentioned in lecture 11 can potentially measure both the ph and oxygen concentration in a solution. Please try to read reference [7] mentioned in the notes for lecture 11 before attempting this question. Figure 4 shows the response of an O2-FET used to investigate a cell culture. Figure 4. O2-FET measurements 3.1. When the circulating pump is operating the conditions in culture chamber are kept constant. In the graph above, what is the difference between the two measurement times when the pump been turned off? 3.2. Estimate the change in ph for the first measurement time if the ISFET has a sensitivity of 55 mv ph There is an additional change in the ISFET output of 10 mv between the change in ph measured with the oxygen transducer switched off, and with it switched on. What is the source of this? 3.4. Can you think of reasons why an ISFET is better suited to measuring short term changes in ph rather than long term measurement of absolute ph?

4 4 4. Figure 5 shows a plot of membrane potential against time for a neuron being activated and delivering an action potential. Figure 5. Schematic plot of an action potential in a typical neuron cell 4.1. Describe the changes in the cell, in terms of ion channels and the flow of charge, that cause the action potential In the Goldman equation, shown below, which parameters are principally affected by the the opening and closing of ion channels? E m = T F ln PK [K ] out P Na [Na ] out P Cl [Cl ] in P K [K ] in P Na [Na ] in P Cl [Cl ] out 4.3. Suggest two possible ways in which a neuron could be excited into an action potential An example of a current clamp circuit which can inject a current I into a cell is shown in figure 6. What natural process does this attempt to emulate? Vin V p 1 V in V in Vp 2 V p 3 I out Cell I Figure 6. Current clamp circuit for neuro-electrophysiology

5 4.5. Given that all resistors marked are equal, and the voltage input (Vin) and output Vp are referenced to ground, what are the voltages at points 1-3? 4.6. Choose a resistor value for out that will give a maximum current output of 1nA. Assume that the resistance of the probe is 1 GΩ, and the op-amps have ±15V power supplies When a step change of current is injected the output voltage Vp shown in figure 7 is recorded. Explain how this differs from the actual membrane voltage Vm and what the source of the error is. Can you suggest a way of correcting this? 5 I V p Figure 7. Input current and output voltage traces from current clamp electrophysiology experiments 5. Figure 8 shows a circuit that could be used in patch clamp measurements of the ion current (Ich) through a single ion channel Derive an expression for the output Vout If Ich is in the pa range suggest a suitable value for f giving reasons for your answer Given the above information why should the operational amplifier have FET based input terminals? 5.4. Assume that the resting value of the transmembrane potential is -70mV and the patch clamp has been successfully located over a voltage gated potassium ion channel. Describe how this ion channel can be activated, and what the effect will be on the output of this circuit. f V out Diff. Amp. V in Cell Bath Electrode Figure 8. Patch Clamp Circuit for Electrophysiology

6 6 6. The quenching of a u based fluorescent molecule by oxygen is described by the Stern-Volmer Equation which describes the kinetics of the quenching process. This is as follows: I 0 I = 0 =1K SV [O 2 ] I0 is the intensity when there is no quenching while I is the intensity at the given oxygen concentration [O2]. In a similar way, τ0 is the fluorescence lifetime with no quenching and τ is the lifetime at oxygen concentration [O2]. KSV is the Stern-Volmer constant which is a measure of the quenching efficiency and is often expanded to be the product of the baseline lifetime τ0 and kq, a rate coefficient for the quenching process such that: I 0 I = 0 =1k q 0 [O 2 ] 6.1. The intensity data from an oxygen sensor made from a fibre optic cable tipped with an immobilised fluorescent material is shown in figure 9. Suggest why this data would make it difficult to use for a sensor and explain a possible source for the observed drift (a) 100% N 2 100% N 2 Fluorescence Intensity (mv) % O 2 100% O time (s) Figure 9. Intensity data from a fluorescent oxygen sensor exposed to saturated atmospheres of O2 and N The lifetime, which is generally unaffected by issues causing drift in the intensity, is commonly measured through modulating the light input with some frequency (f) and measuring the phase shift in the resulting fluorescence. The phase shift (φ) is related to the lifetime (τ) by the following equation: tan[ ]=2 f Estimate the values of τ0 and τ[100% O2] from the data in figure 10, given that the input frequency is 75 khz

7 (b) 100% O 2 100% O 2-10 φ d (degrees) % N 2 100% N time (s) Figure 10. Phase data from a fluorescent oxygen sensor exposed to saturated atmospheres of O2 and N The data shown in figure 11 is phase and intensity data for step changes in the atmosphere being sensed. Estimate values of I0/I and τ0/τ for each oxygen concentration, assume that the results for [O2] = 0.4 % are effectively the same as for 0% oxygen. Why don t you actually require the value of the input modulation frequency? 6.4. Explain the discrepancy between the two sets of measurement results. Plotting the results on a graph can help demonstrate this difference Describe a possible method of miniaturising the sensor and light source and integrating it with a microfluidic system, perhaps with the aim of measuring the oxygen partial pressure in blood samples. (a) % 100% φ d (degrees) % 12,3% 20,6% 39,1% 60% -18 0,4% time (s)

8 8 (b) 0,11 0,10 0,4% Fluorescence intensity (mv) 0,09 0,08 0,07 0,06 0,05 0,04 8% 12,3% 20,6% 39,1% 60% 80% 100% 0, time (s) Figure 11. Sensor response to step variations of O2 concentration: (a) phase response; (b) intensity response.

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage

More information

ECE 2274 MOSFET Voltmeter. Richard Cooper

ECE 2274 MOSFET Voltmeter. Richard Cooper ECE 2274 MOSFET Voltmeter Richard Cooper Pre-Lab for MOSFET Voltmeter Voltmeter design: Build a MOSFET (2N7000) voltmeter in LTspice. The MOSFETs in the voltmeter act as switches. To turn on the MOSFET.

More information

Q1. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET).

Q1. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET). Q. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET). Answer: N-Channel Junction Field Effect Transistor (JFET) Construction: Drain(D)

More information

DIGITAL VLSI LAB ASSIGNMENT 1

DIGITAL VLSI LAB ASSIGNMENT 1 DIGITAL VLSI LAB ASSIGNMENT 1 Problem 1: NMOS and PMOS plots using Cadence. In this exercise, you are required to generate both NMOS and PMOS I-V device characteristics (I/P and O/P) using Cadence (Use

More information

Chapter 5: Field Effect Transistors

Chapter 5: Field Effect Transistors Chapter 5: Field Effect Transistors Slide 1 FET FET s (Field Effect Transistors) are much like BJT s (Bipolar Junction Transistors). Similarities: Amplifiers Switching devices Impedance matching circuits

More information

1.2Vdc 1N4002. Anode V+

1.2Vdc 1N4002. Anode V+ ECE 2274 Pre-Lab for MOSFET Night Light and Voltmeter 1. Night Light The purpose of this part of experiment is to use the switching characteristics of the MOSFET to design a Night Light using a LED, MOSFET,

More information

COLLECTOR DRAIN BASE GATE EMITTER. Applying a voltage to the Gate connection allows current to flow between the Drain and Source connections.

COLLECTOR DRAIN BASE GATE EMITTER. Applying a voltage to the Gate connection allows current to flow between the Drain and Source connections. MOSFETS Although the base current in a transistor is usually small (< 0.1 ma), some input devices (e.g. a crystal microphone) may be limited in their output. In order to overcome this, a Field Effect Transistor

More information

Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Microelectronic Circuits Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Slide 1 MOSFET Construction MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Slide 2

More information

Field Effect Transistors

Field Effect Transistors Chapter 5: Field Effect Transistors Slide 1 FET FET s (Field Effect Transistors) are much like BJT s (Bipolar Junction Transistors). Similarities: Amplifiers Switching devices Impedance matching circuits

More information

ECE315 / ECE515 Lecture 9 Date:

ECE315 / ECE515 Lecture 9 Date: Lecture 9 Date: 03.09.2015 Biasing in MOS Amplifier Circuits Biasing using Single Power Supply The general form of a single-supply MOSFET amplifier biasing circuit is: We typically attempt to satisfy three

More information

Lecture 15. Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1

Lecture 15. Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1 Lecture 15 Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1 Outline MOSFET transistors Introduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Comparison between JFET and

More information

ECE 546 Lecture 12 Integrated Circuits

ECE 546 Lecture 12 Integrated Circuits ECE 546 Lecture 12 Integrated Circuits Spring 2018 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine 1 Integrated Circuits IC Requirements

More information

Field Effect Transistor (FET) FET 1-1

Field Effect Transistor (FET) FET 1-1 Field Effect Transistor (FET) FET 1-1 Outline MOSFET transistors ntroduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Biasing Circuits and Examples Comparison between JFET and epletion-type

More information

8. Characteristics of Field Effect Transistor (MOSFET)

8. Characteristics of Field Effect Transistor (MOSFET) 1 8. Characteristics of Field Effect Transistor (MOSFET) 8.1. Objectives The purpose of this experiment is to measure input and output characteristics of n-channel and p- channel field effect transistors

More information

Short Channel Bandgap Voltage Reference

Short Channel Bandgap Voltage Reference Short Channel Bandgap Voltage Reference EE-584 Final Report Authors: Thymour Legba Yugu Yang Chris Magruder Steve Dominick Table of Contents Table of Figures... 3 Abstract... 4 Introduction... 5 Theory

More information

MEASUREMENT AND INSTRUMENTATION STUDY NOTES UNIT-I

MEASUREMENT AND INSTRUMENTATION STUDY NOTES UNIT-I MEASUREMENT AND INSTRUMENTATION STUDY NOTES The MOSFET The MOSFET Metal Oxide FET UNIT-I As well as the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available

More information

Three Terminal Devices

Three Terminal Devices Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering

More information

I E I C since I B is very small

I E I C since I B is very small Figure 2: Symbols and nomenclature of a (a) npn and (b) pnp transistor. The BJT consists of three regions, emitter, base, and collector. The emitter and collector are usually of one type of doping, while

More information

MOSFET Amplifier Biasing

MOSFET Amplifier Biasing MOSFET Amplifier Biasing Chris Winstead April 6, 2015 Standard Passive Biasing: Two Supplies V D V S R G I D V SS To analyze the DC behavior of this biasing circuit, it is most convenient to use the following

More information

EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017

EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017 EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017 Objective: The objective of this laboratory experiment is to become more familiar with the operation of

More information

Electronics I. Last Time

Electronics I. Last Time (Rev. 1.0) Electronics I Lecture 28 Introduction to Field Effect Transistors (FET s) Muhammad Tilal Department of Electrical Engineering CIIT Attock Campus The logo and is the property of CIIT, Pakistan

More information

University of Pittsburgh

University of Pittsburgh University of Pittsburgh Experiment #4 Lab Report MOSFET Amplifiers and Current Mirrors Submission Date: 07/03/2018 Instructors: Dr. Ahmed Dallal Shangqian Gao Submitted By: Nick Haver & Alex Williams

More information

EE 2274 MOSFET BASICS

EE 2274 MOSFET BASICS Pre Lab: Include your CN with prelab. EE 2274 MOSFET BASICS 1. Simulate in LTspice a family of output characteristic curves (cutve tracer) for the 2N7000 NMOS You will need to add the 2N7000 model to LTspice

More information

The Common Source JFET Amplifier

The Common Source JFET Amplifier The Common Source JFET Amplifier Small signal amplifiers can also be made using Field Effect Transistors or FET's for short. These devices have the advantage over bipolar transistors of having an extremely

More information

MOS TRANSISTOR THEORY

MOS TRANSISTOR THEORY MOS TRANSISTOR THEORY Introduction A MOS transistor is a majority-carrier device, in which the current in a conducting channel between the source and the drain is modulated by a voltage applied to the

More information

MOSFET & IC Basics - GATE Problems (Part - I)

MOSFET & IC Basics - GATE Problems (Part - I) MOSFET & IC Basics - GATE Problems (Part - I) 1. Channel current is reduced on application of a more positive voltage to the GATE of the depletion mode n channel MOSFET. (True/False) [GATE 1994: 1 Mark]

More information

Objectives The purpose of this lab is build and analyze Differential amplifiers based on NMOS transistors (or NPN transistors).

Objectives The purpose of this lab is build and analyze Differential amplifiers based on NMOS transistors (or NPN transistors). 1 Lab 03: Differential Amplifiers (MOSFET) (20 points) NOTE: 1) Please use the basic current mirror from Lab01 for the second part of the lab (Fig. 3). 2) You can use the same chip as the basic current

More information

GUJARAT TECHNOLOGICAL UNIVERSITY. Semester II. Type of course: ME-Electronics & Communication Engineering (VLSI & Embedded Systems Design)

GUJARAT TECHNOLOGICAL UNIVERSITY. Semester II. Type of course: ME-Electronics & Communication Engineering (VLSI & Embedded Systems Design) GUJARAT TECHNOLOGICAL UNIVERSITY Subject Name: Analog and Mixed Signal IC Design (Elective) Subject Code: 3725206 Semester II Type of course: ME-Electronics & Communication Engineering (VLSI & Embedded

More information

ENEE307 Lab 7 MOS Transistors 2: Small Signal Amplifiers and Digital Circuits

ENEE307 Lab 7 MOS Transistors 2: Small Signal Amplifiers and Digital Circuits ENEE307 Lab 7 MOS Transistors 2: Small Signal Amplifiers and Digital Circuits In this lab, we will be looking at ac signals with MOSFET circuits and digital electronics. The experiments will be performed

More information

Unit III FET and its Applications. 2 Marks Questions and Answers

Unit III FET and its Applications. 2 Marks Questions and Answers Unit III FET and its Applications 2 Marks Questions and Answers 1. Why do you call FET as field effect transistor? The name field effect is derived from the fact that the current is controlled by an electric

More information

EECS3611 Analog Integrated Circuit Design. Lecture 3. Current Source and Current Mirror

EECS3611 Analog Integrated Circuit Design. Lecture 3. Current Source and Current Mirror EECS3611 Analog ntegrated Circuit Design Lecture 3 Current Source and Current Mirror ntroduction Before any device can be used in any application, it has to be properly biased so that small signal AC parameters

More information

Federal Urdu University of Arts, Science & Technology Islamabad Pakistan THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB

Federal Urdu University of Arts, Science & Technology Islamabad Pakistan THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB DEPARTMENT OF ELECTRICAL ENGINEERING Prepared By: Checked By: Approved By: Engr. Saqib Riaz Engr. M.Nasim Khan Dr.Noman Jafri Lecturer

More information

Homework Assignment 07

Homework Assignment 07 Homework Assignment 07 Question 1 (Short Takes). 2 points each unless otherwise noted. 1. A single-pole op-amp has an open-loop low-frequency gain of A = 10 5 and an open loop, 3-dB frequency of 4 Hz.

More information

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known

More information

Introduction to Analog Interfacing. ECE/CS 5780/6780: Embedded System Design. Various Op Amps. Ideal Op Amps

Introduction to Analog Interfacing. ECE/CS 5780/6780: Embedded System Design. Various Op Amps. Ideal Op Amps Introduction to Analog Interfacing ECE/CS 5780/6780: Embedded System Design Scott R. Little Lecture 19: Operational Amplifiers Most embedded systems include components that measure and/or control real-world

More information

Lecture 4. MOS transistor theory

Lecture 4. MOS transistor theory Lecture 4 MOS transistor theory 1.7 Introduction: A MOS transistor is a majority-carrier device, in which the current in a conducting channel between the source and the drain is modulated by a voltage

More information

Georgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam

Georgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number

More information

Electronic Circuits. Junction Field-effect Transistors. Dr. Manar Mohaisen Office: F208 Department of EECE

Electronic Circuits. Junction Field-effect Transistors. Dr. Manar Mohaisen Office: F208   Department of EECE Electronic Circuits Junction Field-effect Transistors Dr. Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of the Precedent Lecture Explain the Operation Class A Power

More information

Physics 481 Experiment 3

Physics 481 Experiment 3 Physics 481 Experiment 3 LAST Name (print) FIRST Name (print) TRANSISTORS (BJT & FET) npn BJT n-channel MOSFET 1 Experiment 3 Transistors: BJT & FET In this experiment transistor properties and transistor

More information

Homework Assignment 07

Homework Assignment 07 Homework Assignment 07 Question 1 (Short Takes). 2 points each unless otherwise noted. 1. A single-pole op-amp has an open-loop low-frequency gain of A = 10 5 and an open loop, 3-dB frequency of 4 Hz.

More information

UNIT 3: FIELD EFFECT TRANSISTORS

UNIT 3: FIELD EFFECT TRANSISTORS FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are

More information

Lecture-45. MOS Field-Effect-Transistors Threshold voltage

Lecture-45. MOS Field-Effect-Transistors Threshold voltage Lecture-45 MOS Field-Effect-Transistors 7.4. Threshold voltage In this section we summarize the calculation of the threshold voltage and discuss the dependence of the threshold voltage on the bias applied

More information

EE 230 Lab Lab 9. Prior to Lab

EE 230 Lab Lab 9. Prior to Lab MOS transistor characteristics This week we look at some MOS transistor characteristics and circuits. Most of the measurements will be done with our usual lab equipment, but we will also use the parameter

More information

Summary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering

Summary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering Summary Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET A/Lectr. Khalid Shakir Dept. Of Electrical Engineering College of Engineering Maysan University Page 1-21 Summary The MOSFET The metal oxide

More information

CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs)

CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs) CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs) INTRODUCTION - FETs are voltage controlled devices as opposed to BJT which are current controlled. - There are two types of FETs. o Junction FET (JFET) o Metal

More information

EE 501 Lab 1 Exploring Transistor Characteristics

EE 501 Lab 1 Exploring Transistor Characteristics Objectives: Tasks: EE 501 Lab 1 Exploring Transistor Characteristics Lab report due on Sep 8th, 2011 1. Make sure you have your cadence 6 work properly 2. Familiar with characteristics of MOSFET such as

More information

Chapter 6: Field-Effect Transistors

Chapter 6: Field-Effect Transistors Chapter 6: Field-Effect Transistors FETs vs. BJTs Similarities: Amplifiers Switching devices Impedance matching circuits Differences: FETs are voltage controlled devices. BJTs are current controlled devices.

More information

Electronic Circuits II - Revision

Electronic Circuits II - Revision Electronic Circuits II - Revision -1 / 16 - T & F # 1 A bypass capacitor in a CE amplifier decreases the voltage gain. 2 If RC in a CE amplifier is increased, the voltage gain is reduced. 3 4 5 The load

More information

Lecture Integrated circuits era

Lecture Integrated circuits era Lecture 1 1.1 Integrated circuits era Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell laboratories. In 1961, first IC was introduced. Levels of Integration:-

More information

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering EXPERIMENT 8 MOSFET AMPLIFIER CONFIGURATIONS AND INPUT/OUTPUT IMPEDANCE OBJECTIVES The purpose of this experiment

More information

LECTURE 09 LARGE SIGNAL MOSFET MODEL

LECTURE 09 LARGE SIGNAL MOSFET MODEL Lecture 9 Large Signal MOSFET Model (5/14/18) Page 9-1 LECTURE 9 LARGE SIGNAL MOSFET MODEL LECTURE ORGANIZATION Outline Introduction to modeling Operation of the MOS transistor Simple large signal model

More information

Electronic Circuits for Mechatronics ELCT 609 Lecture 7: MOS-FET Amplifiers

Electronic Circuits for Mechatronics ELCT 609 Lecture 7: MOS-FET Amplifiers Electronic Circuits for Mechatronics ELCT 609 Lecture 7: MOS-FET Amplifiers Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Enhancement N-MOS Modes of Operation Mode V GS I DS V DS Cutoff

More information

Basic Electronics. Introductory Lecture Course for. Technology and Instrumentation in Particle Physics Chicago, Illinois June 9-14, 2011

Basic Electronics. Introductory Lecture Course for. Technology and Instrumentation in Particle Physics Chicago, Illinois June 9-14, 2011 Basic Electronics Introductory Lecture Course for Technology and Instrumentation in Particle Physics 2011 Chicago, Illinois June 9-14, 2011 Presented By Gary Drake Argonne National Laboratory Session 3

More information

MOSFET Terminals. The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals.

MOSFET Terminals. The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. MOSFET Terminals The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. For an n-channel MOSFET, the SOURCE is biased at a lower potential (often

More information

Lecture 3: Transistors

Lecture 3: Transistors Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,

More information

Field-Effect Transistor

Field-Effect Transistor Philadelphia University Faculty of Engineering Communication and Electronics Engineering Field-Effect Transistor Introduction FETs (Field-Effect Transistors) are much like BJTs (Bipolar Junction Transistors).

More information

IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET)

IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET) ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET) LONG QUESTIONS (10 MARKS) 1. Draw the construction diagram and explain the working of P-Channel JFET. Also draw the characteristics curve and transfer

More information

d. Can you find intrinsic gain more easily by examining the equation for current? Explain.

d. Can you find intrinsic gain more easily by examining the equation for current? Explain. EECS140 Final Spring 2017 Name SID 1. [8] In a vacuum tube, the plate (or anode) current is a function of the plate voltage (output) and the grid voltage (input). I P = k(v P + µv G ) 3/2 where µ is a

More information

FIELD- EFFECT TRANSISTORS: MOSFETS

FIELD- EFFECT TRANSISTORS: MOSFETS FIELD- EFFECT TRANSISTORS: MOSFETS LAB 8: INTRODUCTION TO FETS AND USING THEM AS CURRENT CONTROLLERS As discussed in the last lab, transistors are the basic devices providing control of large currents

More information

Field Effect Transistors (FET s) University of Connecticut 136

Field Effect Transistors (FET s) University of Connecticut 136 Field Effect Transistors (FET s) University of Connecticut 136 Field Effect Transistors (FET s) FET s are classified three ways: by conduction type n-channel - conduction by electrons p-channel - conduction

More information

Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and

Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and Lecture 16: MOS Transistor models: Linear models, SPICE models Context In the last lecture, we discussed the MOS transistor, and added a correction due to the changing depletion region, called the body

More information

6.012 Microelectronic Devices and Circuits

6.012 Microelectronic Devices and Circuits Page 1 of 13 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Microelectronic Devices and Circuits Final Eam Closed Book: Formula sheet provided;

More information

Analog Circuits and Systems

Analog Circuits and Systems Analog Circuits and Systems Prof. K Radhakrishna Rao Lecture 10: Electronic Devices for Analog Circuits 1 Multipliers Multipliers provide multiplication of two input voltages or currents Multipliers can

More information

Field-Effect Transistor

Field-Effect Transistor Module: Electronics Module Number: 610/6501- Philadelphia University Faculty of Engineering Communication and Electronics Engineering Field-Effect Transistor ntroduction FETs (Field-Effect Transistors)

More information

Lecture 20. MOSFET (cont d) MOSFET 1-1

Lecture 20. MOSFET (cont d) MOSFET 1-1 Lecture 0 MOSFET (cont d) MOSFET 1-1 Outline Continue Enhancement-type MOSFET (E- MOSFET) Characteristics C Biasing Circuits and Examples MOSFET 1- Test Yourself Complete the following statements with

More information

4.1 Device Structure and Physical Operation

4.1 Device Structure and Physical Operation 10/12/2004 4_1 Device Structure and Physical Operation blank.doc 1/2 4.1 Device Structure and Physical Operation Reading Assignment: pp. 235-248 Chapter 4 covers Field Effect Transistors ( ) Specifically,

More information

Electronics Review Flashcards

Electronics Review Flashcards November 21, 2011 1 Op Amps 2 Diodes 3 Silicon 4 pn Junctions 5 BJTs 6 MOSFETs Open Loop Characteristics Open-Loop Op-Amp Characteristics (first-order model) Closed Loop Characteristics Closed-Loop Op-Amp

More information

EE5310/EE3002: Analog Circuits. on 18th Sep. 2014

EE5310/EE3002: Analog Circuits. on 18th Sep. 2014 EE5310/EE3002: Analog Circuits EC201-ANALOG CIRCUITS Tutorial 3 : PROBLEM SET 3 Due shanthi@ee.iitm.ac.in on 18th Sep. 2014 Problem 1 The MOSFET in Fig. 1 has V T = 0.7 V, and μ n C ox = 500 μa/v 2. The

More information

Exam Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance voltage?

Exam Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance voltage? Exam 2 Name: Score /90 Question 1 Short Takes 1 point each unless noted otherwise. 1. Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance

More information

ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration)

ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration) Revised 2/16/2007 ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration) *NOTE: The text mentioned below refers to the Sedra/Smith, 5th edition.

More information

0.85V. 2. vs. I W / L

0.85V. 2. vs. I W / L EE501 Lab3 Exploring Transistor Characteristics and Design Common-Source Amplifiers Lab report due on September 22, 2016 Objectives: 1. Be familiar with characteristics of MOSFET such as gain, speed, power,

More information

USER MANUAL FOR THE LM2901 QUAD VOLTAGE COMPARATOR FUNCTIONAL MODULE

USER MANUAL FOR THE LM2901 QUAD VOLTAGE COMPARATOR FUNCTIONAL MODULE USER MANUAL FOR THE LM2901 QUAD VOLTAGE COMPARATOR FUNCTIONAL MODULE LM2901 Quad Voltage Comparator 1 5/18/04 TABLE OF CONTENTS 1. Index of Figures....3 2. Index of Tables. 3 3. Introduction.. 4-5 4. Theory

More information

Chapter 6: Field-Effect Transistors

Chapter 6: Field-Effect Transistors Chapter 6: Field-Effect Transistors Islamic University of Gaza Dr. Talal Skaik MOSFETs MOSFETs have characteristics similar to JFETs and additional characteristics that make then very useful. There are

More information

O 2 SENSORS Zirconium Dioxide (ZrO 2 ) Software & Hardware Design Guide

O 2 SENSORS Zirconium Dioxide (ZrO 2 ) Software & Hardware Design Guide O 2 SENSORS Zirconium Dioxide (ZrO 2 ) Software & Hardware Design Guide This document describes the recommended software and hardware requirements to control and analyse data from SST Sensing s range of

More information

Physics 303 Fall Module 4: The Operational Amplifier

Physics 303 Fall Module 4: The Operational Amplifier Module 4: The Operational Amplifier Operational Amplifiers: General Introduction In the laboratory, analog signals (that is to say continuously variable, not discrete signals) often require amplification.

More information

Lecture 300 Low Voltage Op Amps (3/28/10) Page 300-1

Lecture 300 Low Voltage Op Amps (3/28/10) Page 300-1 Lecture 300 Low Voltage Op Amps (3/28/10) Page 300-1 LECTURE 300 LOW VOLTAGE OP AMPS LECTURE ORGANIZATION Outline Introduction Low voltage input stages Low voltage gain stages Low voltage bias circuits

More information

Isolated Industrial Current Loop Using the IL300 Linear

Isolated Industrial Current Loop Using the IL300 Linear VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note Isolated Industrial Current Loop Using the IL Linear INTRODUCTION Programmable logic controllers (PLC) were once

More information

APPLICATION NOTE AN-009. GaN Essentials. AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs

APPLICATION NOTE AN-009. GaN Essentials. AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs GaN Essentials AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs NITRONEX CORPORATION 1 OCTOBER 2008 GaN Essentials: Bias Sequencing and Temperature Compensation of GaN HEMTs 1. Table

More information

Reading. Lecture 17: MOS transistors digital. Context. Digital techniques:

Reading. Lecture 17: MOS transistors digital. Context. Digital techniques: Reading Lecture 17: MOS transistors digital Today we are going to look at the analog characteristics of simple digital devices, 5. 5.4 And following the midterm, we will cover PN diodes again in forward

More information

UNIVERSITI MALAYSIA PERLIS

UNIVERSITI MALAYSIA PERLIS UNIVERSITI MALAYSIA PERLIS ANALOG ELECTRONICS II EKT 214 Semester II (2013/2014) EXPERIMENT # 4 OP-AMP (COMPARATOR BASICS) EXPERIMENT 4 Op-Amp (Comparator Basics) 1. OBJECTIVE: 1.1 To demonstrate the op-amp

More information

FP kHz 7A High Efficiency Synchronous PWM Boost Converter

FP kHz 7A High Efficiency Synchronous PWM Boost Converter 500kHz 7A High Efficiency Synchronous PWM Boost Converter General Description The FP6277 is a current mode boost DC-DC converter with PWM/PSM control. Its PWM circuitry with built-in 30mΩ high side switch

More information

Homework 2 Solutions. Perform.op analysis, the small-signal parameters of M1 and M2 are shown below.

Homework 2 Solutions. Perform.op analysis, the small-signal parameters of M1 and M2 are shown below. Problem 1 Homework 2 Solutions 1) Circuit schematic Perform.op analysis, the small-signal parameters of M1 and M2 are shown below. Small-signal parameters of M1 gds = 9.723u gm = 234.5u region = 2 vds

More information

ECE 3274 MOSFET CD Amplifier Project

ECE 3274 MOSFET CD Amplifier Project ECE 3274 MOSFET CD Amplifier Project 1. Objective This project will show the biasing, gain, frequency response, and impedance properties of the MOSFET common drain (CD) amplifier. 2. Components Qty Device

More information

LECTURE 19 DIFFERENTIAL AMPLIFIER

LECTURE 19 DIFFERENTIAL AMPLIFIER Lecture 19 Differential Amplifier (6/4/14) Page 191 LECTURE 19 DIFFERENTIAL AMPLIFIER LECTURE ORGANIZATION Outline Characterization of a differential amplifier Differential amplifier with a current mirror

More information

OPERATIONAL AMPLIFIERS and FEEDBACK

OPERATIONAL AMPLIFIERS and FEEDBACK Lab Notes A. La Rosa OPERATIONAL AMPLIFIERS and FEEDBACK 1. THE ROLE OF OPERATIONAL AMPLIFIERS A typical digital data acquisition system uses a transducer (sensor) to convert a physical property measurement

More information

FET(Field Effect Transistor)

FET(Field Effect Transistor) Field Effect Transistor: Construction and Characteristic of JFETs. Transfer Characteristic. CS,CD,CG amplifier and analysis of CS amplifier MOSFET (Depletion and Enhancement) Type, Transfer Characteristic,

More information

Solid State Device Fundamentals

Solid State Device Fundamentals Solid State Device Fundamentals 4.4. Field Effect Transistor (MOSFET) ENS 463 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 4N101b 1 Field-effect transistor (FET)

More information

FP6276B 500kHz 6A High Efficiency Synchronous PWM Boost Converter

FP6276B 500kHz 6A High Efficiency Synchronous PWM Boost Converter 500kHz 6A High Efficiency Synchronous PWM Boost Converter General Description The is a current mode boost DC-DC converter with PWM/PSM control. Its PWM circuitry with built-in 40mΩ high side switch and

More information

LABORATORY #3 QUARTZ CRYSTAL OSCILLATOR DESIGN

LABORATORY #3 QUARTZ CRYSTAL OSCILLATOR DESIGN LABORATORY #3 QUARTZ CRYSTAL OSCILLATOR DESIGN OBJECTIVES 1. To design and DC bias the JFET transistor oscillator for a 9.545 MHz sinusoidal signal. 2. To simulate JFET transistor oscillator using MicroCap

More information

EXPERIMENT NO -9 TRANSITOR COMMON -BASE CONFIGURATION CHARACTERISTICS

EXPERIMENT NO -9 TRANSITOR COMMON -BASE CONFIGURATION CHARACTERISTICS Contents EXPERIMENT NO -9 TRANSITOR COMMON -BASE CONFIGURATION CHARACTERISTICS... 3 EXPERIMENT NO -10. FET CHARACTERISTICS... 8 Experiment # 11 Non-inverting amplifier... 13 Experiment #11(B) Inverting

More information

FET, BJT, OpAmp Guide

FET, BJT, OpAmp Guide FET, BJT, OpAmp Guide Alexandr Newberry UCSD PHYS 120 June 2018 1 FETs 1.1 What is a Field Effect Transistor? Figure 1: FET with all relevant values labelled. FET stands for Field Effect Transistor, it

More information

Lecture 48 Review of Feedback HW # 4 Erickson Problems Ch. 9 # s 7 &9 and questions in lectures I. Review of Negative Feedback

Lecture 48 Review of Feedback HW # 4 Erickson Problems Ch. 9 # s 7 &9 and questions in lectures I. Review of Negative Feedback Lecture 48 Review of Feedback HW # 4 Erickson Problems Ch. 9 # s 7 &9 and questions in lectures I. Review of Negative Feedback A. General. Overview 2. Summary of Advantages 3. Disadvantages B. Buck Converter

More information

EE 501 Lab9 Widlar Biasing Circuit and Bandgap Reference Circuit

EE 501 Lab9 Widlar Biasing Circuit and Bandgap Reference Circuit EE 501 Lab9 Widlar Biasing Circuit and Bandgap Reference Circuit Due Nov. 19, 2015 Objective: 1. Understand the Widlar current source circuit. 2. Built a Self-biasing current source circuit. 3. Understand

More information

Homework KCL/KVL Review Bode Plots Active Filters

Homework KCL/KVL Review Bode Plots Active Filters Homework KCL/KVL Review Bode Plots Active Filters Homeworkdue 3/6 (Najera), due 3/9 (Quinones) SUCCESS POINTS: REPORT WRITING CHECK TO MAKE SURE EVERYTHING YOU SAY REFER DIRECTLY TO YOUR TABLES AND GRAPHS?

More information

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems. Today. MOSFET Ids vs. Vgs, Vds MOSFET. Preclass. MOSFET I vs.

ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems. Today. MOSFET Ids vs. Vgs, Vds MOSFET. Preclass. MOSFET I vs. ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 2: September 7, 2012 Transistor Introduction Today MOSFET Capacitive and resistive loads Zero-th order transistor model

More information

Diode as a Temperature Sensor

Diode as a Temperature Sensor M.B. Patil, IIT Bombay 1 Diode as a Temperature Sensor Introduction A p-n junction obeys the Shockley equation, I D = I s e V a/v T 1 ) I s e Va/V T for V a V T, 1) where V a is the applied voltage, V

More information

EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices

EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage

More information

FET. FET (field-effect transistor) JFET. Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd

FET. FET (field-effect transistor) JFET. Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd FET Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd FET (field-effect transistor) unipolar devices - unlike BJTs that use both electron and hole current, they operate only with one type

More information

Lecture 13. Biasing and Loading Single Stage FET Amplifiers. The Building Blocks of Analog Circuits - III

Lecture 13. Biasing and Loading Single Stage FET Amplifiers. The Building Blocks of Analog Circuits - III Lecture 3 Biasing and Loading Single Stage FET Amplifiers The Building Blocks of Analog Circuits III In this lecture you will learn: Current biasing of circuits Current sources and sinks for CS, CG, and

More information

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) 4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.

More information