ECE 2274 MOSFET Voltmeter. Richard Cooper
|
|
- Shauna May Goodwin
- 6 years ago
- Views:
Transcription
1 ECE 2274 MOSFET Voltmeter Richard Cooper Pre-Lab for MOSFET Voltmeter Voltmeter design: Build a MOSFET (2N7000) voltmeter in LTspice. The MOSFETs in the voltmeter act as switches. To turn on the MOSFET. For design assume Vg = 2.1Vdc when it begins to switch on. Design the Rd value, such that the maximum drain current when the MOSFET in on is 8mA for Vdd = 10Vdc Vds SAT = 100mV. Design the input voltage divider resistors values such that Vout turns on at approximately at Vin = 6Vdc, Vin = 10Vdc, and Vin = 14Vdc.Choose input resistors (Rg1, Rg2) values that are in the 10kΩ to 150kΩ range. To find the voltage divider resistors Rg1, Rg2, to you must create three input voltage circuits thresholds when Vin= 6V, Vin=10V, and Vin=14V. The calculation steps will be identical to the first voltmeter, but the input voltage (Vin) will be the only difference. Design the voltage divider (Rg1, Rg2) so that the gate voltage is 2.1Vdc with the desired Vin voltage. Vin Rd1 Id Vin DC Iin Rg1 G D Vout M1 DC Vdd Rg2 S Page 1 of 7
2 Show all work Fill in table below from your circuit simulation. All currents are derived for a voltage across a know resistor. Set Rg1, and Rg2 for Vin = 6Vdc threshold circuit. Vin Voltage when MOSFET starts to V G Voltage of gate when MOSFET starts to Vin Voltage when MOSFET current Id reaches steady state V G Voltage of gate when MOSFET current Id Vds sat Voltage when MOSFET current Id Rd1 Drain current limit resistor Value Set Rg1, and Rg2 for Vin = 10Vdc threshold circuit. Vin Voltage when MOSFET starts to V G Voltage of gate when MOSFET starts to Vin Voltage when MOSFET current Id reaches steady state V G Voltage of gate when MOSFET current Id Page 2 of 7
3 Vds sat Voltage when MOSFET current Id Set Rg1, and Rg2 for Vin = 14Vdc threshold circuit. Vin Voltage when MOSFET starts to V G Voltage of gate when MOSFET starts to Vin Voltage when MOSFET current Id reaches steady state V G Voltage of gate when MOSFET current Id Vds sat Voltage when MOSFET current Id Run a DC Sweep simulation on Vin from 0V to 20V in increments of 100mV. Plot Vds for each voltmeter circuit Print out your plot. Remember that a MOSFET is considered to be on after V DS voltage is approximately 0.2 volts. From the LTspice plot Vds of when the MOSFET is fully on. What input voltage did each on the MOSFETs reach steady state? Required Attachments: (3 plots) (6V, 10V, 14V) Vdd = 10Vdc, DC Sweep, varying Vin plotting Vds, plotting Id, and plotting Vg for each input voltage divider plots. Three traces per plot (Vds, Id, Vg). Page 3 of 7
4 Lab Exercise MOSFET Voltmeter 1. You must test the 2N7000 MOSFET with the curve tracer before build your experiment. Setup the curve tracer to N-FET, Vds max = 10V, Is Max = 10ma, Vg/step = 0.1V, Offset = 1.8V, N Steps = 10, Rload=10, and P max = 0.5W 2. Measure with DMM Build the voltmeter you designed in pre-lab. Manually adjust Vin to find the turn on voltages and saturated voltages of each MOSFET design. Record the voltage at which MOSFET turns on and saturates (where first begins to current and flattens out). Fill out tables. 3. DC sweep Sweep the circuit using the Basic DC sweep Vin from 0 to 20V. Plot the Id current in ma not amps. Add formula data to output section of the Sweep step Load BasicDCSweep > open Step Setup Tab > Open Add Step Tab > Add Step > Processing > Analog Signal > Formula. Divide voltage across Rd by Rd and scale to ma. Drag this new step into the sweep loop just below the DMM step. Open the sweep step > Sweep Output Tab > Add > Processed Data vs. Voltage X-Axis. Run sweep. (3 plots) Vin vs. Id ( 6V, 10V, 14V) Run a DC sweep of Vin from 0Vdc to 20Vdc and turn in the following plots for each on voltage (6V, 10V, 14V) range with your lab report: Vin vs. Id, Measure the voltage across a known resistance (Rd) and calculate the scale factor for the current plot in ma, write the scale factor on the plot. You will have a total of 3 plots to be turn in with your lab report. Remember to label each plot. Also, remember Id is the current in ma. How does it compare with your design? Label all plot. Page 4 of 7
5 DATA SHEET Name: Name: Instructor: Class day and time: Date: Bench number: MOSFET Voltmeter 1. You must test your 2N7000 MOSFET with the curve tracer before build your experiment. Set curve trace to N-FET, Is Max = 10ma, Vds max =10V, Vg/step = 0.1V, Offset = 1.8V, Rload=.10, N Steps = Measure with DMM Vdd= 10Vdc Manually adjust the Vin voltage where observing Id (voltage across Rd). Fill in table below. Show all work Fill in table below from your circuit simulation. All currents are derived for a voltage across a know resistor. Set Rg1, and Rg2 for Vin = 6Vdc threshold circuit. Measure with voltmeter Vin Voltage when MOSFET starts to V G Voltage of gate Vin Voltage when MOSFET current Id V G Voltage of gate when MOSFET current Id Vds sat Voltage when MOSFET current Id Rd1 Drain current limit resistor Value Page 5 of 7
6 Set Rg1, and Rg2 for Vin = 10Vdc threshold circuit. Measure with voltmeter Vin Voltage when MOSFET starts to V G Voltage of gate when MOSFET starts to Vin Voltage when MOSFET current Id V G Voltage of gate when MOSFET current Id Vds sat Voltage when MOSFET current Id Set Rg1, and Rg2 for Vin = 14Vdc threshold circuit. Measure with voltmeter Vin Voltage when MOSFET starts to V G Voltage of gate when MOSFET starts to Vin Voltage when MOSFET current Id V G Voltage of gate when MOSFET current Id Page 6 of 7
7 Vds sat Voltage when MOSFET current Id 3. DC sweep. Compare the DC sweeps of your Pre-Lab with the results of your experimental DC Sweeps. What conclusions can you make? Required Attachments: (3 plots) Vin vs. Id ( 6v, 10v, 14v) DC Sweep Vin vs. Id (voltage across a resistor Rd) Add a Formula step to plot the current in ma thru the Rd resistors as a current in ma use a scale factor to convert the voltage to a current on the plot. Page 7 of 7
1.2Vdc 1N4002. Anode V+
ECE 2274 Pre-Lab for MOSFET Night Light and Voltmeter 1. Night Light The purpose of this part of experiment is to use the switching characteristics of the MOSFET to design a Night Light using a LED, MOSFET,
More informationEE 2274 MOSFET BASICS
Pre Lab: Include your CN with prelab. EE 2274 MOSFET BASICS 1. Simulate in LTspice a family of output characteristic curves (cutve tracer) for the 2N7000 NMOS You will need to add the 2N7000 model to LTspice
More informationEE 2274 DIODE OR GATE & CLIPPING CIRCUIT
EE 2274 DIODE OR GATE & CLIPPING CIRCUIT Prelab Part I: Wired Diode OR Gate LTspice use 1N4002 1. Design a diode OR gate, Figure 1 in which the maximum current thru R1 I R1 = 9mA assume Vin = 5Vdc. Design
More information.dc Vcc Ib 0 50uA 5uA
EE 2274 BJT Biasing PreLab: 1. Common Emitter (CE) Transistor Characteristics curve Generate the characteristics curves for a 2N3904 in LTspice by plotting Ic by sweeping Vce over a set of Ib steps. Label
More informationECE2274 Pre-Lab for MOSFET logic LTspice NAND Gate, NOR Gate, and CMOS Inverter
ECE2274 Pre-Lab for MOFET logic LTspice NAN ate, NOR ate, and CMO Inverter 1. NMO NAN ate Use Vdd = 9.. For the NMO NAN gate shown below gate, using the 2N7000 MOFET LTspice model such that Vto = 2.0.
More informationECE 3274 MOSFET CD Amplifier Project
ECE 3274 MOSFET CD Amplifier Project 1. Objective This project will show the biasing, gain, frequency response, and impedance properties of the MOSFET common drain (CD) amplifier. 2. Components Qty Device
More informationThe MOSFET can be easily damaged by static electricity, so careful handling is important.
ECE 3274 MOSFET CS Amplifier Project Richard Cooper 1. Objective This project will show the biasing, gain, frequency response, and impedance properties of the MOSFET common source (CS) amplifiers. 2. Components
More informationDIGITAL VLSI LAB ASSIGNMENT 1
DIGITAL VLSI LAB ASSIGNMENT 1 Problem 1: NMOS and PMOS plots using Cadence. In this exercise, you are required to generate both NMOS and PMOS I-V device characteristics (I/P and O/P) using Cadence (Use
More informationTTL LOGIC and RING OSCILLATOR TTL
ECE 2274 TTL LOGIC and RING OSCILLATOR TTL We will examine two digital logic inverters. The first will have a passive resistor pull-up output stage. The second will have an active transistor and current
More informationECE 2274 Diode Basics and a Rectifier Completed Prior to Coming to Lab
ECE 2274 Diode Basics and a Rectifier Completed Prior to Coming to Lab Perlab: Part I I-V Characteristic Curve for the 1. Construct the circuit shown in figure 1. Using a DC Sweep, simulate in LTspice
More informationCurve Tracer Laboratory Assistant Using the Analog Discovery Module as A Curve Tracer
Curve Tracer Laboratory Assistant Using the Analog Discovery Module as A Curve Tracer The objective of this lab is to become familiar with methods to measure the dc current-voltage (IV) behavior of diodes
More informationEE 230 Lab Lab 9. Prior to Lab
MOS transistor characteristics This week we look at some MOS transistor characteristics and circuits. Most of the measurements will be done with our usual lab equipment, but we will also use the parameter
More informationEE 2274 RC and Op Amp Circuit Completed Prior to Coming to Lab. Prelab Part I: RC Circuit
EE 2274 RC and Op Amp Circuit Completed Prior to Coming to Lab Prelab Part I: RC Circuit 1. Design a high pass filter (Fig. 1) which has a break point f b = 1 khz at 3dB below the midband level (the -3dB
More informationELEC 2210 EXPERIMENT 12 NMOS Logic
ELEC 2210 EXPERIMENT 12 NMOS Logic Objectives: The experiments in this laboratory exercise will provide an introduction to NMOS logic. You will use the Bit Bucket breadboarding system to build and test
More informationENEE307 Lab 7 MOS Transistors 2: Small Signal Amplifiers and Digital Circuits
ENEE307 Lab 7 MOS Transistors 2: Small Signal Amplifiers and Digital Circuits In this lab, we will be looking at ac signals with MOSFET circuits and digital electronics. The experiments will be performed
More informationUNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering
UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering EXPERIMENT 8 MOSFET AMPLIFIER CONFIGURATIONS AND INPUT/OUTPUT IMPEDANCE OBJECTIVES The purpose of this experiment
More informationThe George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB
The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB Experiment # 11 MOSFET Amplifiers testing and designing Equipment:
More informationReal Analog - Circuits 1 Chapter 1: Lab Projects
Real Analog - Circuits 1 Chapter 1: Lab Projects 1.2.2: Dependent Sources and MOSFETs Overview: In this lab assignment, a qualitative discussion of dependent sources is presented in the context of MOSFETs
More informationThe Common Source JFET Amplifier
The Common Source JFET Amplifier Small signal amplifiers can also be made using Field Effect Transistors or FET's for short. These devices have the advantage over bipolar transistors of having an extremely
More informationCbyp. RoutCS 2N7000. Chi-CS. Cs Cbyp. CS-CC figure 1: Two stage amplifier
Under construction: Let me know of any errors. Design tools for Two stage DC coupled CS CC amplifier Richard Cooper October 27 2016 The Two-stage amplifier will combine two amplifiers that we have already
More informationRevised: Summer 2010
EE 2274 PRE-LAB EXPERIMENT 5 DIODE OR GATE & CLIPPING CIRCUIT COMPLETE PRIOR TO COMING TO LAB Part I: 1. Design a diode, Figure 1 OR gate in which the maximum input current,, Iin is less than 5mA. Show
More informationLab 6: MOSFET AMPLIFIER
Lab 6: MOSFET AMPLIFIER NOTE: This is a "take home" lab. You are expected to do the lab on your own time (still working with your lab partner) and then submit your lab reports. Lab instructors will be
More informationLAB EXERCISE 3 FET Amplifier Design and Linear Analysis
ADS 2012 Workspaces and Simulation Tools (v.1 Oct 2012) LAB EXERCISE 3 FET Amplifier Design and Linear Analysis Topics: More schematic capture, DC and AC simulation, more on libraries and cells, using
More informationEE 501 Lab 1 Exploring Transistor Characteristics
Objectives: Tasks: EE 501 Lab 1 Exploring Transistor Characteristics Lab report due on Sep 8th, 2011 1. Make sure you have your cadence 6 work properly 2. Familiar with characteristics of MOSFET such as
More informationELEC 350L Electronics I Laboratory Fall 2012
ELEC 350L Electronics I Laboratory Fall 2012 Lab #9: NMOS and CMOS Inverter Circuits Introduction The inverter, or NOT gate, is the fundamental building block of most digital devices. The circuits used
More informationPhysics 481 Experiment 3
Physics 481 Experiment 3 LAST Name (print) FIRST Name (print) TRANSISTORS (BJT & FET) npn BJT n-channel MOSFET 1 Experiment 3 Transistors: BJT & FET In this experiment transistor properties and transistor
More informationENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration)
Revised 2/16/2007 ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration) *NOTE: The text mentioned below refers to the Sedra/Smith, 5th edition.
More informationName: Date: Score: / (75)
Name: Date: Score: / (75) This lab MUST be done in your normal lab time NO LATE LABS Bring Textbook to Lab. You don t need to use your lab notebook, just fill in the blanks, you ll be graded when you re
More informationObjectives The purpose of this lab is build and analyze Differential amplifiers based on NMOS transistors (or NPN transistors).
1 Lab 03: Differential Amplifiers (MOSFET) (20 points) NOTE: 1) Please use the basic current mirror from Lab01 for the second part of the lab (Fig. 3). 2) You can use the same chip as the basic current
More informationElectronic Circuits II - Revision
Electronic Circuits II - Revision -1 / 16 - T & F # 1 A bypass capacitor in a CE amplifier decreases the voltage gain. 2 If RC in a CE amplifier is increased, the voltage gain is reduced. 3 4 5 The load
More informationUniversity of Pittsburgh
University of Pittsburgh Experiment #4 Lab Report MOSFET Amplifiers and Current Mirrors Submission Date: 07/03/2018 Instructors: Dr. Ahmed Dallal Shangqian Gao Submitted By: Nick Haver & Alex Williams
More information8. Characteristics of Field Effect Transistor (MOSFET)
1 8. Characteristics of Field Effect Transistor (MOSFET) 8.1. Objectives The purpose of this experiment is to measure input and output characteristics of n-channel and p- channel field effect transistors
More informationDC Operating Point, I-V Curve Trace. Author: Nate Turner
DC Operating Point, I-V Curve Trace Author: Nate Turner Description: This tutorial demonstrates how to print the DC-Operating Point as well as trace the I-V curves for a transistor in the tsmc 180nm process.
More informationEXPERIMENT 10: SINGLE-TRANSISTOR AMPLIFIERS 11/11/10
EXPERIMENT 10: SINGLE-TRANSISTOR AMPLIFIERS 11/11/10 In this experiment we will measure the characteristics of the standard common emitter amplifier. We will use the 2N3904 npn transistor. If you have
More informationUNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering
UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering EXPERIMENT 1 MAXIMUM POWER TRANSFER OBJECTIVES In this experiment the student will investigate the circuit requirements
More informationEE 210: CIRCUITS AND DEVICES
EE 210: CIRCUITS AND DEVICES LAB #3: VOLTAGE AND CURRENT MEASUREMENTS This lab features a tutorial on the instrumentation that you will be using throughout the semester. More specifically, you will see
More informationUNIVERSITY OF NORTH CAROLINA AT CHARLOTTE. Department of Electrical and Computer Engineering
UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering Experiment No. 9 - MOSFET Amplifier Configurations Overview: The purpose of this experiment is to familiarize
More informationClass #8: Experiment Diodes Part I
Class #8: Experiment Diodes Part I Purpose: The objective of this experiment is to become familiar with the properties and uses of diodes. We used a 1N914 diode in two previous experiments, but now we
More informationLABORATORY 2: Bridge circuits, Superposition, Thevenin Circuits, and Amplifier Circuits
LABORATORY 2: Bridge circuits, Superposition, Thevenin Circuits, and Amplifier Circuits Note: If your partner is no longer in the class, please talk to the instructor. Material covered: Bridge circuits
More informationDigital Applications of the Operational Amplifier
Lab Procedure 1. Objective This project will show the versatile operation of an operational amplifier in a voltage comparator (Schmitt Trigger) circuit and a sample and hold circuit. 2. Components Qty
More informationECE4902 C2012 Lab 3. Qualitative MOSFET V-I Characteristic SPICE Parameter Extraction using MOSFET Current Mirror
ECE4902 C2012 Lab 3 Qualitative MOSFET VI Characteristic SPICE Parameter Extraction using MOSFET Current Mirror The purpose of this lab is for you to make both qualitative observations and quantitative
More informationDepletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET
Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage
More informationCOLLECTOR DRAIN BASE GATE EMITTER. Applying a voltage to the Gate connection allows current to flow between the Drain and Source connections.
MOSFETS Although the base current in a transistor is usually small (< 0.1 ma), some input devices (e.g. a crystal microphone) may be limited in their output. In order to overcome this, a Field Effect Transistor
More informationECE 310L : LAB 9. Fall 2012 (Hay)
ECE 310L : LAB 9 PRELAB ASSIGNMENT: Read the lab assignment in its entirety. 1. For the circuit shown in Figure 3, compute a value for R1 that will result in a 1N5230B zener diode current of approximately
More informationExperiment 5 Single-Stage MOS Amplifiers
Experiment 5 Single-Stage MOS Amplifiers B. Cagdaser, H. Chong, R. Lu, and R. T. Howe UC Berkeley EE 105 Fall 2005 1 Objective This is the first lab dealing with the use of transistors in amplifiers. We
More informationECE4902 Lab 5 Simulation. Simulation. Export data for use in other software tools (e.g. MATLAB or excel) to compare measured data with simulation
ECE4902 Lab 5 Simulation Simulation Export data for use in other software tools (e.g. MATLAB or excel) to compare measured data with simulation Be sure to have your lab data available from Lab 5, Common
More informationPhysics 303 Fall Module 4: The Operational Amplifier
Module 4: The Operational Amplifier Operational Amplifiers: General Introduction In the laboratory, analog signals (that is to say continuously variable, not discrete signals) often require amplification.
More informationEE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017
EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017 Objective: The objective of this laboratory experiment is to become more familiar with the operation of
More informationLab 5: MOSFET I-V Characteristics
1. Learning Outcomes Lab 5: MOSFET I-V Characteristics In this lab, students will determine the MOSFET I-V characteristics of both a P-Channel MOSFET and an N- Channel MOSFET. Also examined is the effect
More informationIn a cascade configuration, the overall voltage and current gains are given by:
ECE 3274 Two-Stage Amplifier Project 1. Objective The objective of this lab is to design and build a direct coupled two-stage amplifier, including a common-source gain stage and a common-collector buffer
More informationET Training. Electronics: JFET Instructor: H.Pham. The JUNCTION FIELF EFFECT TRANSISTOR (JFET) n channel JFET p channel JFET
The JUNCTION FIELF EFFECT TRANSISTOR (JFET) n channel JFET p channel JFET 1 The BIASED JFET VDD provides a drain-to-source voltage and supplies current from drain to source VGG sets the reverse-biased
More informationEE 330 Laboratory 8 Discrete Semiconductor Amplifiers
EE 330 Laboratory 8 Discrete Semiconductor Amplifiers Fall 2018 Contents Objective:...2 Discussion:...2 Components Needed:...2 Part 1 Voltage Controlled Amplifier...2 Part 2 A Nonlinear Application...3
More informationAn input resistor suppresses noise and stray pickup developed across the high input impedance of the op amp.
When you have completed this exercise, you will be able to operate a voltage follower using dc voltages. You will verify your results with a multimeter. O I The polarity of V O is identical to the polarity
More informationField Effect Transistors
Field Effect Transistors Purpose In this experiment we introduce field effect transistors (FETs). We will measure the output characteristics of a FET, and then construct a common-source amplifier stage,
More informationField Effect Transistors
Field Effect Transistors LECTURE NO. - 41 Field Effect Transistors www.mycsvtunotes.in JFET MOSFET CMOS Field Effect transistors - FETs First, why are we using still another transistor? BJTs had a small
More informationLab 5: MOSFET I-V Characteristics
1. Learning Outcomes Lab 5: MOSFET I-V Characteristics In this lab, students will determine the MOSFET I-V characteristics of both a P-Channel MOSFET and an N- Channel MOSFET. Also examined is the effect
More informationHello, and welcome to the TI Precision Labs video series discussing comparator applications. The comparator s job is to compare two analog input
Hello, and welcome to the TI Precision Labs video series discussing comparator applications. The comparator s job is to compare two analog input signals and produce a digital or logic level output based
More informationEE 320 L LABORATORY 9: MOSFET TRANSISTOR CHARACTERIZATIONS. by Ming Zhu UNIVERSITY OF NEVADA, LAS VEGAS 1. OBJECTIVE 2. COMPONENTS & EQUIPMENT
EE 320 L ELECTRONICS I LABORATORY 9: MOSFET TRANSISTOR CHARACTERIZATIONS by Ming Zhu DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING UNIVERSITY OF NEVADA, LAS VEGAS 1. OBJECTIVE Get familiar with MOSFETs,
More informationMassachusetts Institute of Technology Department of Electrical Engineering and Computer Science Circuits & Electronics Spring 2005
Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science 6.002 Circuits & Electronics Spring 2005 Lab #2: MOSFET Inverting Amplifiers & FirstOrder Circuits Introduction
More informationData Conversion and Lab Lab 1 Fall Operational Amplifiers
Operational Amplifiers Lab Report Objectives Materials See separate report form located on the course webpage. This form should be completed during the performance of this lab. 1) To construct and operate
More informationECE 2274 Pre-Lab for Experiment # 4 Diode Basics and a Rectifier Completed Prior to Coming to Lab
Part I I-V Characteristic Curve ECE 2274 Pre-Lab for Experiment # 4 Diode Basics and a Rectifier Completed Prior to Coming to Lab 1. Construct the circuit shown in figure 4-1. Using a DC Sweep, simulate
More informationANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS
AV18-AFC ANALOG FUNDAMENTALS C Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS 1 ANALOG FUNDAMENTALS C AV18-AFC Overview This topic identifies the basic FET amplifier configurations and their principles of
More informationExperiment No: 5. JFET Characteristics
Experiment No: 5 JFET Characteristics Aim: 1. To study Drain Characteristics and Transfer Characteristics of a Junction Field Effect Transistor (JFET). 2. To measure drain resistance, trans-conductance
More informationPhy 335, Unit 4 Transistors and transistor circuits (part one)
Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit
More informationClass #9: Experiment Diodes Part II: LEDs
Class #9: Experiment Diodes Part II: LEDs Purpose: The objective of this experiment is to become familiar with the properties and uses of LEDs, particularly as a communication device. This is a continuation
More informationPage 1 of 7. Power_AmpFal17 11/7/ :14
ECE 3274 Power Amplifier Project (Push Pull) Richard Cooper 1. Objective This project will introduce two common power amplifier topologies, and also illustrate the difference between a Class-B and a Class-AB
More informationENGR4300 Test 3A Fall 2002
1. 555 Timer (20 points) Figure 1: 555 Timer Circuit For the 555 timer circuit in Figure 1, find the following values for R1 = 1K, R2 = 2K, C1 = 0.1uF. Show all work. a) (4 points) T1: b) (4 points) T2:
More informationEE 330 Laboratory 8 Discrete Semiconductor Amplifiers
EE 330 Laboratory 8 Discrete Semiconductor Amplifiers Fall 2017 Contents Objective:... 2 Discussion:... 2 Components Needed:... 2 Part 1 Voltage Controlled Amplifier... 2 Part 2 Common Source Amplifier...
More informationElectronic Circuits Laboratory EE462G Lab #6. Small Signal Models: The MOSFET Common Source Amplifier
Electronic Circuits Laboratory EE462G Lab #6 Small Signal Models: The MOSFET Common Source Amplifier AC and DC Analysis Amplifier circuits have DC and AC components that can be analyzed separately. The
More informationEE5310/EE3002: Analog Circuits. on 18th Sep. 2014
EE5310/EE3002: Analog Circuits EC201-ANALOG CIRCUITS Tutorial 3 : PROBLEM SET 3 Due shanthi@ee.iitm.ac.in on 18th Sep. 2014 Problem 1 The MOSFET in Fig. 1 has V T = 0.7 V, and μ n C ox = 500 μa/v 2. The
More informationPhysics 120 Lab 6 (2018) - Field Effect Transistors: Ohmic Region
Physics 120 Lab 6 (2018) - Field Effect Transistors: Ohmic Region The field effect transistor (FET) is a three-terminal device can be used in two extreme ways as an active element in a circuit. One is
More informationECE315 / ECE515 Lecture 9 Date:
Lecture 9 Date: 03.09.2015 Biasing in MOS Amplifier Circuits Biasing using Single Power Supply The general form of a single-supply MOSFET amplifier biasing circuit is: We typically attempt to satisfy three
More informationChapter 5: Field Effect Transistors
Chapter 5: Field Effect Transistors Slide 1 FET FET s (Field Effect Transistors) are much like BJT s (Bipolar Junction Transistors). Similarities: Amplifiers Switching devices Impedance matching circuits
More informationESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems. Today. MOSFET Ids vs. Vgs, Vds MOSFET. Preclass. MOSFET I vs.
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 2: September 7, 2012 Transistor Introduction Today MOSFET Capacitive and resistive loads Zero-th order transistor model
More informationClass #16: Experiment Matlab and Data Analysis
Class #16: Experiment Matlab and Data Analysis Purpose: The objective of this experiment is to add to our Matlab skill set so that data can be easily plotted and analyzed with simple tools. Background:
More informationReading. Lecture 17: MOS transistors digital. Context. Digital techniques:
Reading Lecture 17: MOS transistors digital Today we are going to look at the analog characteristics of simple digital devices, 5. 5.4 And following the midterm, we will cover PN diodes again in forward
More informationExperiment #6: Biasing an NPN BJT Introduction to CE, CC, and CB Amplifiers
SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Experiment #6: Biasing an NPN BJT Introduction to CE, CC, and CB
More informationMechatronics and Measurement. Lecturer:Dung-An Wang Lecture 2
Mechatronics and Measurement Lecturer:Dung-An Wang Lecture 2 Lecture outline Reading:Ch3 of text Today s lecture Semiconductor 2 Diode 3 4 Zener diode Voltage-regulator diodes. This family of diodes exhibits
More informationECE 532 Hspice Tutorial
SCT 2.03.2004 E-Mail: sterry2@utk.edu ECE 532 Hspice Tutorial I. The purpose of this tutorial is to gain experience using the Hspice circuit simulator from the Unix environment. After completing this assignment,
More informationLAB 4 : FET AMPLIFIERS
LEARNING OUTCOME: LAB 4 : FET AMPLIFIERS In this lab, students design and implement single-stage FET amplifiers and explore the frequency response of the real amplifiers. Breadboard and the Analog Discovery
More informationBaşkent University Department of Electrical and Electronics Engineering EEM 214 Electronics I Experiment 8. Bipolar Junction Transistor
Başkent University Department of Electrical and Electronics Engineering EEM 214 Electronics I Experiment 8 Bipolar Junction Transistor Aim: The aim of this experiment is to investigate the DC behavior
More informationWhat Is An SMU? SEP 2016
What Is An SMU? SEP 2016 Agenda SMU Introduction Theory of Operation (Constant Current/Voltage Sourcing + Measure) Cabling : Triax vs Coax Advantages in Resistance Applications (vs. DMMs) Advantages in
More informationIntroduction to the Op-Amp
Purpose: ENGR 210/EEAP 240 Lab 5 Introduction to the Op-Amp To become familiar with the operational amplifier (OP AMP), and gain experience using this device in electric circuits. Equipment Required: HP
More informationField Effect Transistors
Chapter 5: Field Effect Transistors Slide 1 FET FET s (Field Effect Transistors) are much like BJT s (Bipolar Junction Transistors). Similarities: Amplifiers Switching devices Impedance matching circuits
More informationThe preferred Exercise is shown in Exercises 5B or 5C.
ECE 231 Laboratory Exercise 5A The preferred Exercise is shown in Exercises 5B or 5C. Laboratory Group (Names) OBJECTIVES Validate the Schottky diode equation. Calculate the dc and dynamic (ac) resistance
More informationJFET Noise. Figure 1: JFET noise equivalent circuit. is the mean-square thermal drain noise current and i 2 fd
JFET Noise 1 Object The objects of this experiment are to measure the spectral density of the noise current output of a JFET, to compare the measured spectral density to the theoretical spectral density,
More informationIntroduction PNP C NPN C
Introduction JT Transistors: A JT (or any transistor) can be used either as a switch with positions of on or off, or an amplifier that controls its output at all levels in between the extreme on or off
More informationECEN3250 Lab 6 Design of Current Sources Using MOS Transistors
Lab 6 Design of Current Sources Using MOS Transistors with Extra-Credit Problem Design of a Saw-Tooth Waveform Generator ECE Department University of Colorado, Boulder 1 Prelab Assignment Current sources
More informationBiosensors and Instrumentation: Tutorial 3
Biosensors and Instrumentation: Tutorial 3 1 1. A schematic cross section of an ion sensitive field effect transistor (ISFET) is shown in figure 1. Vref Solution eference Electrode Encapsulation SiO2 nsi
More informationEE311: Electrical Engineering Junior Lab, Fall 2006 Experiment 4: Basic MOSFET Characteristics and Analog Circuits
EE311: Electrical Engineering Junior Lab, Fall 2006 Experiment 4: Basic MOSFET Characteristics and Analog Circuits Objective This experiment is designed for students to get familiar with the basic properties
More informationOCR Electronics for A2 MOSFETs Variable resistors
Resistance characteristic You are going to find out how the drain-source resistance R d of a MOSFET depends on its gate-source voltage V gs when the drain-source voltage V ds is very small. 1 Assemble
More information6.002 Circuits and Electronics Final Exam Practice Set 1
MASSACHUSETTS INSTITUTE OF TECHNOLOGY DEPARTMENT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE 6.002 Circuits and Electronics Set 1 Problem 1 Figure 1 shows a simplified small-signal model of a certain
More informationSirindhorn International Institute of Technology Thammasat University at Rangsit
Sirindhorn International Institute of Technology Thammasat University at Rangsit School of Information, Computer and Communication Technology Practice Problems for the Final Examination COURSE : ECS204
More informationSIMULATION WITH THE CUK TOPOLOGY ECE562: Power Electronics I COLORADO STATE UNIVERSITY. Modified in Fall 2011
SIMULATION WITH THE CUK TOPOLOGY ECE562: Power Electronics I COLORADO STATE UNIVERSITY Modified in Fall 2011 ECE 562 Cuk Converter (NL5 Simulation) Laboratory Page 1 PURPOSE: The purpose of this lab is
More informationthe reactance of the capacitor, 1/2πfC, is equal to the resistance at a frequency of 4 to 5 khz.
EXPERIMENT 12 INTRODUCTION TO PSPICE AND AC VOLTAGE DIVIDERS OBJECTIVE To gain familiarity with PSPICE, and to review in greater detail the ac voltage dividers studied in Experiment 14. PROCEDURE 1) Connect
More informationBring your textbook to lab.
Bring your textbook to lab. Electrical & Computer Engineering Department ECE 2100 Experiment No. 11 Introduction to MOSFET Transistors A. Stolp, 4/3/01 rev,4/6/03 Minimum required points = 46 Recommend
More informationEXPERIMENT 7: DIODE CHARACTERISTICS AND CIRCUITS 10/24/10
DIODE CHARACTERISTICS AND CIRCUITS EXPERIMENT 7: DIODE CHARACTERISTICS AND CIRCUITS 10/24/10 In this experiment we will measure the I vs V characteristics of Si, Ge, and Zener p-n junction diodes, and
More informationFederal Urdu University of Arts, Science & Technology Islamabad Pakistan THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB
THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB DEPARTMENT OF ELECTRICAL ENGINEERING Prepared By: Checked By: Approved By: Engr. Saqib Riaz Engr. M.Nasim Khan Dr.Noman Jafri Lecturer
More informationLABORATORY 3: Transient circuits, RC, RL step responses, 2 nd Order Circuits
LABORATORY 3: Transient circuits, RC, RL step responses, nd Order Circuits Note: If your partner is no longer in the class, please talk to the instructor. Material covered: RC circuits Integrators Differentiators
More informationExperiment #1: Solid State Diodes Testing & Characterization. Type Value Symbol Name Multisim Part Description Resistor 1MΩ R 2 Basic/Resistor ---
SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Experiment #1: Solid State Diodes Testing & Characterization COMPONENTS
More information