GaN-HEMT Dynamic ON-state Resistance characterisation and Modelling
|
|
- Erick Spencer
- 5 years ago
- Views:
Transcription
1 GaN-HEMT Dynamic ON-sae Resisance characerisaion and Modelling Ke Li, Paul Evans, Mark Johnson Power Elecronics, Machine and Conrol group Universiy of Noingham, UK Absrac GaN-HEMTs suffer from rapping effecs which migh increase device ON-sae resisance ( ) values. Thus, dynamic of a commercial GaN-HEMT is characerized a differen bias volages in he paper by a proposed measuremen circui. Based on he measuremen resuls, a behavioural model is proposed o represen device dynamic values, in which rapping and derapping ime consan is represened by a series of RC nework. The model is simulaed in PSPICE, of which he simulaion resuls of values are compared and validaed wih he measuremen when device swiches in a power converer wih differen duy cycles and swiching volages. The resuls show ha values of his device would increase due o rapping effecs. Keywords GaN-HEMT; Dynamic ON-sae resisance; Power semiconducor device characerisaion; Power semiconducor device modelling; Behavioural model I. INTRODUCTION Applicaion of GaN power semiconducor devices is becoming more and more popular in power elecronics sysems design, because GaN devices can operae a high emperaure, swich fas and produce low power loss. In order o beer use GaN devices in power elecronics sysems, i is necessary o undersand heir characerisics. High-Elecron- Mobiliy Transisors (HEMTs) are he mos widely used GaN power elecronic devices, bu hey suffer from elecron rapping effecs ha reduce heir curren carrying capabiliy [1], [2]. Illusraed in Fig. 1, his rapping effec is relaed mainly wih wo effecs when device in OFF-sae, one is he bias V DS volage value and anoher is he bias ime (rapping ime), which would give rise o he increase of GaN device ON-sae resisance ( ) value. According o he resuls presened by auhors in [3], GaN device values would increase by a maximal facor of 4 afer 1ms bias ime depending on bias V DS volage value. The resuls presened by auhors in [4] demonsrae ha device values would furher increase 5% if bias ime is doubled. In he on-sae (low bias), derapping occurs and he values decrease o he seady sae value a a rae characerised by he derapping ime. As shown in [3], GaN device dynamic values would decrease 3% afer 1µs derapping ime. When employing GaN ransisors in power elecronics circuis, GaN device migh swich wih differen periods and duy V DS 1s bias volage 2nd bias volage Trapping ime 1s dynamic 2nd dynamic Derapping ime Fig. 1: GaN-HEMT dynamic values due o rapping effecs cycles leading o a combinaion of rapping and derapping effecs and consequenly uncerainy in he acual value of. This will lead o uncerainy in device power loss, making predicions of converer efficiency and cooling sysem design challenging. The abiliy o characerise and model GaN- HEMT values is hus an imporan design consideraion. There are mainly wo differen mehods o measure GaN- HEMT dynamic values: one mehod is by using direcly a measuremen equipmen [4], and anoher one is by using an elecrical circui, where differen circui opologies are proposed by auhors in [3], [5] [8]. In his paper, a new characerisaion circui is presened o measure GaN- HEMT dynamic values, which could be easily implemened. Compared o he above differen circuis, his new measuremen circui needs fewer componens and offers an alernaive mehod o characerise he device and o compare he resuls. Based on he dynamic measuremen resuls, a behavioural model is hus proposed o presen device rapping and derapping effec, which could be used in a circui simulaor. The paper has he following srucure. Firs he measuremen circui o characerize GaN-HEMT dynamic values is presened. Aferwards, measuremen resuls of differen rapping and derapping ime on values are shown. Based on he measuremen resuls, a behavioural model is proposed o represen device dynamic values. The model is furher validaed by comparing wih he measuremen /16/$31. c 216 IEEE
2 when device swiches in a power converer. Conclusions are given a las. II. GAN-HEMT DYNAMIC ON-STATE RESISTANCE A. circui MEASUREMENT GaN device values can be obained by measuring device ON-sae volage V DS(on) across i and curren I D hrough i in an elecrical circui. As he measured bias volage when device is OFF (V DS(off) ) could achieve more han several hundred imes higher han device V DS(on), a volage clamping circui is necessary o reduce he measured V DS(off) in order o increase measuremen accuracy. For his reason, he measuremen circui shown in Fig. 2 is consiued by a bias circui o conrol device rapping ime when i is OFF and a volage clamping circui o measure device V DS(on) value when i is ON. In he bias circui, a ransisor T1 is used o conrol DUT rapping ime. A resisive load R load is used o se he curren level when DUT is in ON-sae. Because of he parasiic inducance L para of he R load, wo diodes D1, D2 offer a free wheeling pah of he curren when eiher T1 or DUT is swiched from ON o OFF. The volage clamping circui is consiued by a depleion mode (D-mode) Si-MOSFET and a zener diode. DUT measuremen volage V DS(m.) is measured across he zener diode. The principle of he volage clamping circui is ha when DUT is ON, D-mode Si-MOSFET is in ON-sae (V gms m is superior o MOSFET hreshold volage V h ), so poins s m and d m are almos in he same poenial and DUT V DS(on) can hus be measured direcly (V DS(m.) = V DS(on) ). When DUT is OFF, zener diode juncion capaciance is charged a firs, so V DS(m.) increases o he zener diode clamping volage V clamp, and hen V gms m is inferior o V h. Aferwards, D-mode MOSFET is pinched OFF and is iner-elecrode capaciance C dms m is charged o wihsands almos he whole bias V DS volage (V DS V DS(m.) ). I is o be noed ha as here is a leakage curren balance beween D-mode MOSFET and Zener diode, V DS(m.) is inferior o V clamp in seady-sae. Insead of measuring volage range beween V DS(on) and V DS, a much smaller volage range beween V DS(on) and V clamp is measured, hus he measuremen sensiiviy is increased. Compared o he similar ype volage clamping circuis ha are analyzed by auhors in [6], less componens and no exernal power supply are used in his clamping circui. Device seady-sae could be measured by applying he conrol signal shown in Fig. 2b, where DUT is kep always in ON-sae and T1 is conrolled by a single pulse. Device dynamic could be measured by applying he conrol signal shown in Fig. 2c, where DUT is iniially kep in ON-sae and T1 blocks all he bias volage. Then a 1, DUT is swiched OFF and a 2, T1 is swiched ON, hus Volage bias circui L para L para 56µF D1 1 2 (b) Conrol signal o measure seadysae T1 L para D2 R load (a) configuraion DUT I D measuremen D d m g m S Volage Clamping circui s m V DS measuremen (c) Conrol signal o measure dynamic Fig. 2: GaN-HEMT dynamic ON-sae resisance measuremen circui and conrol signals Load T1 Volage clamping circui D2 D1 DUT Fig. 3: Realizaion of he measuremen circui all he bias volage is across DUT. Aferwards, a 3, DUT is swiched ON again, so curren I D flows hrough he DUT. Finally a 4, T1 is swiched OFF. Thus, DUT rapping ime is conrolled by 2-3 while derapping ime is conrolled by 3-4, so values of differen rapping and derapping ime could be measured. The realizaion of he measuremen circui is shown in Fig. 3. In he measuremen, R load = 1Ω, T1 is a commercial GaN-HEMT (EPC212C, 2V/5A) while D1 and D2 are he
3 V DS(m.) (V) (Ω) I D (A) # 1-4 Dynamic (12V) Dynamic (8V) V GS (V) Time(µs) Fig. 4: Measured waveforms when device is bias a 8V for 1µs Fig. 5: Comparison of seady-sae a 25 C and dynamic same Schoky diode (MBRS421T3G, 2V/4A). Dynamic values of a DUT, which is he same as T1, is measured by he above circui, of which he resuls are presened in he nex secion. B. resuls Several major parameers of he measuremen equipmens and clamping circui devices are summarized in TABLE. I. In he measuremen, he maximal measured V DS volage is 3.3V, which could achieve a measuremen accuracy of a leas =.13V by using a 8-bi resoluion oscilloscope. GaN- HEMT dynamic values are measured when i is biased a 8V and 12V. When GaN-HEMT is biased a 8V and rapping ime is 1µs, he measured volage V DS(m.), curren I D and volage V GS are shown in Fig. 4. Because of he volage clamping circui, V DS(m.) is abou 1.7V when DUT is OFF, which is much smaller han he bias volage (8V). I is o be noed ha maximal V DS(m.) almos does no change when he bias volage increases o 12V, hus he measuremen accuracy is improved in comparison o a direc measuremen. DUT dynamic values are calculaed afer insan in Fig. 4, which is 1µs afer OFF-ON ransiion when each elecrical parameer sabilizes. The obained values based on he above waveforms is shown in Fig. 5, in which values are compared beween seady-sae and dynamic-sae when device is biased a 8V and 12V a 25 C. As shown in he resuls, values increase wih he rapping ime and i decreases wih derapping ime, and i increases more wih a higher bias volage. For his device, i is observed ha when device biased by a cerain rapping ime, i needs a longer derapping ime o reduce is dynamic values o he seady-sae values, which shows ha effecive values are likely o be higher han heoreical values in applicaion. A behavioural model is proposed based on he measuremen resuls, which will be presened in he nex secion B Vcomp V GS (V) Fig. 6: values of differen V GS volages a 25 C III. GAN-HEMT DYNAMIC ON-STATE RESISTANCE A. Behavioural model MODELLING When in seady-sae, he measured device values of differen V GS volages a 25 C is shown in Fig. 6, which presens ha values increase when V GS volage decreases. According o his -V GS relaion, he obained dynamic values could be represened by saic values a he equivalen gae volage shown in Fig. 6, where poin A corresponds o he value when i is obained a seady-sae, and poin B corresponds o he value afer cerain rapping ime. The V GS volage difference beween poin A and poin B, which is defined as p, could be applied o represen change during he rapping and derapping process. Afer adding p in gae circui, which is shown in Fig. 7, device V GS volage (V GS = V G p ) afer rapping ime could be adjused, hus a dynamic value could be obained. I is shown ha p increases wih he rapping ime and decreases wih he derapping ime, in which he phenomena could be modelled in he form of an RC circui, which is presened in Fig. 7. In each RC uni, pn increases when A
4 V G p G D V DS Trapping ime: 1ms 1ms 1ms Model V GS S.1 1µs 1µs 1µs R 1d R 1 C 1 V 1 = k1 V DS p1 R nd R n C n V n = kn V DS p = p1 + + pn pn Fig. 7: Dynamic values represenaion by behavioural model capacior C n is charged by a conrolled volage source V n hrough resisor R n and i decreases when C n is discharged hrough resisor R nd. Thus, GaN-HEMT rapping and derapping effec could be represened by a series of he RC unis, and p value is he sum of he volage of he capacior in each uni. Based on he measuremen resuls shown in Fig. 5 when bias volage is 8V, seven RC unis are used o represen device dynamic values, in which parameers V 1 -V 7, C 1 -C 7, R 1d -R 7d and R 1 -R 7 are obained by fiing mehods. The values of he above parameers are given in TABLE. II. The comparison beween he model and he measuremen is shown in Fig. 8, where he model represens generally well dynamic values of differen rapping and derapping ime. Afer obaining he above parameers, he model illusraed in Fig. 7 could be easily implemened in a circui simulaor. In his paper, he model is implemened in PSPICE, where p and V 1 V 7 are represened by volage conrolled volage source and coefficiens k 1 k 7 could be calculaed once V 1 V 7 are known Fig. 8: Comparison beween he measuremen and model on dynamic values as a funcion of derapping ime for differen rapping imes when V DS = 8V.45 Trapping ime: 1ms.35 1ms ms 1µs 1µs 1µs Model Fig. 9: Comparison beween he measuremen and model on dynamic values when V DS = 12V B. Model exension for differen bias volage Following by ha, he same model is used o represen he measuremen resuls when he device is biased a V DS = 12V. In order o represen device dynamic values of differen bias volages by he model and easily implemen i, only V 1...V 7 are fied again when V DS = 12V, while he oher parameers are he same as obained when V DS = 8V. In such a case, bigger p values migh be obained, so TABLE I: Major parameers of he measuremen equipmens and clamping circui devices Oscilloscope Curren probe Volage probe D-mode MOSFET Zener diode DPO414B (1GHz, 8-bi) TCP312 (1MHz, 3A) TPP1 (1GHz, 3V) BSP149 (2V, V h 1.4V) BZT52C3V3 (3.3V) TABLE II: Parameers using o represen GaN-HEMT rapping effec when device is bias a 8V V 1 V 2 V 3 V 4 V 5 V 6 V 7.51V.6V.28V.25V.66V.1V.97V R 1d R 2d R 3d R 4d R 5d R 6d R 7d Ω Ω Ω Ω Ω Ω Ω R 1 R 2 R 3 R 4 R 5 R 6 R Ω 5.6Ω 31.5Ω Ω Ω Ω.5Ω C 1 C 2 C 3 C 4 C 5 C 6 C F F F F F F F
5 .25.2 Simulaion 1 2 Fig. 1: Conrol signal when device swiches coninuously in a power converer bigger dynamic values would be represened when device is biased a he same rapping ime as V DS = 8V. I corresponds o he measuremen resuls shown in Fig. 5 ha bigger dynamic values are obained when device is bias a 12V han a 8V. Obviously, all he above 28 parameers could be fied again o represen he measuremen resuls when V DS = 12V. However, i migh be difficul o find he rend of each parameer wih he bias volage, especially ha of R nd, R n and C n. In conrary, he rend of V n wih he bias volage is easier o be found and implemened in he model. The obained parameers of V 1 -V 7 in his siuaion are given in TABLE III. The comparison beween he model and he measuremen when device biased a 12V is shown in Fig. 9, where i is shown ha he model could represen he measuremen in a reasonable way. As GaN-HEMT suffered from rapping effec, is values migh increase when i swiches coninuously in a power converer. For his reason, values esimaed by he above model is compared wih he measuremen, and he resuls will be presened in he nex secion. A. Swiching volage a 8V IV. MODEL VALIDATION The same elecrical circui shown in Fig. 2a wih he conrol signal shown in Fig. 1 is used o measure device dynamic values when i swiches coninuously. In order o avoid device self heaing, i swiches a 1kHz wih differen duy cycles and a duraion of.1s. When swiching volage is 8V and duy cycle (D) is 5% and 9%, he comparison of he values is shown in Fig. 11a and in Fig. 11b separaely. As explained previously, device derapping ime o reach is seady-sae value is longer han rapping ime o increase is dynamic values, which explains ha he measured values increase o a facor of wo higher han is seady-sae value afer.1s in he measuremen. The rapping ime in he above measuremens varies from 5µs o 1µs and derapping ime Simulaion (a) Duy cycle is 5% (b) Duy cycle is 9% Fig. 11: Comparison beween he measuremen and simulaion on values when device swiches a 8V varies from 5µs o 9 µs. According he measuremen resuls shown in Fig. 8, dynamic values are no influenced by derapping ime obviously in his derapping ime range, which migh explain ha a change of duy cycle does no change device values obviously. The rapping effecs can increase values very quickly when rapping ime inferior o 1µs, hus i migh sill increase device values when device using in high frequency converer (more han 1kHz). However, if device swiches in high frequency, he swiching loss migh increase device juncion emperaure T j, which would also increase device values. I is also shown in Fig. 11 ha he rend of he values increase in he measuremen is represened generally well by he simulaion, where he difference beween he measuremen and he simulaion in boh siuaions is wihin 17%. The difference beween he simulaion and he measuremen migh be due o he difference beween he model and he measuremen shown in Fig. 8 on dynamic values. TABLE III: Parameers using o represen GaN-HEMT rapping effec when device is bias a 12V V 1 V 2 V 3 V 4 V 5 V 6 V 7.143V.1V.32V.1V.74V.1V 1.59V
6 Simulaion Simulaion (a) Device swiches a 12V (D=5%) (b) Device swiches a 1V (D=5%) Fig. 12: Comparison beween he measuremen and simulaion on values when device swiches a differen volages B. Swiching volage a 12V and 1V The device is hen swiched a 12V, of which he comparison beween he measuremen and simulaion resuls is shown in Fig. 12a. Despie some difference beween he measuremen and simulaion, he increase rend of he values is represened well by he model. The bigger values ripper in he simulaion han in measuremens is mainly relied on difference illusraed in Fig. 9 beween he model and he measuremen on change influenced by derapping ime, where he model represens a bigger value variaion han he measuremen. The device is hen swiched a 1V, of which he comparison beween he measuremen and simulaion resuls is shown in Fig. 12b. In his condiion, parameers R nd, R n and C n are he same as ha shown in TABLE II, and parameers V n is inerpolaed linearly based on he resuls obained a TABLE II and TABLE III. I is shown in Fig. 12b ha he simulaion represens well he measuremen, and obained dynamic values in his condiion is beween he values when device biased a 12V and 8V. Even wih some difference, all he above resuls could validae he proposed model, which could be used o esimae device conducion loss including rapping effec in power converers a differen swiching volages. V. CONCLUSION In his paper, dynamic ON-sae resisance ( ) values of a commercial GaN-HEMT is measured a differen bias volages by a proposed elecrical circui, which is consiued by a volage bias circui o conrol DUT rapping ime and a volage clamping circui o measure DUT on-sae volage. Compared o oher elecrical characerisaion circuis, his circui has less elecrical componens and could be easily implemened. I is shown in he characerisaion resuls ha boh rapping and derapping ime could influence device dynamic values and a higher bias volage would give rise o a higher dynamic value. Based on he characerisaion resuls, a behavioural model, which is consiued by a series of RC nework, is proposed o represen device dynamic values of differen bias volages. The model is hen implemened in PSPICE and validaed wih he measuremen when device swiches in a power converer wih differen duy cycles and swiching volages. Boh he measuremen and simulaion resuls show ha device values would increase due o he rapping effecs. The rapping effecs of he device migh sill increase is values in more han 1kHz high frequency power converers, because device derapping ime o reach is seadysae value is longer han rapping ime o increase is dynamic values. The proposed model could be hus used o esimae device conducion loss in a power converer when using GaN-HEMT of differen swiching volages. ACKNOWLEDGMENT The auhors would like o hank UK Engineering and Physical Sciences Research Council (EPSRC) for he financial suppor under EP/K14471/1 and all he parners of he projec Silicon Compaible GaN Power Elecronics for echnical discussions. REFERENCES [1] T. Mizuani, Y. Ohno, M. Akia, S. Kishimoo, and K. Maezawa, A sudy on curren collapse in AlGaN/GaN HEMTs induced by bias sress, Elecron Devices, IEEE Transacions on, vol. 5, no. 1, pp , 23. [2] M. Meneghini, D. Bisi, D. Marcon, S. Soffels, M. Van Hove, T.-L. Wu, S. Decouere, G. Meneghesso, and E. Zanoni, Trapping and reliabiliy assessmen in d-mode gan-based mis-hems for power applicaions, Power Elecronics, IEEE Transacions on, vol. 29, no. 5, pp , 214. [3] B. Lu, T. Palacios, D. Risbud, S. Bahl, and D. Anderson, Exracion of Dynamic On-Resisance in GaN Transisors: Under Sof- and Hard- Swiching Condiions, in Compound Semiconducor Inegraed Circui Symposium (CSICS), 211 IEEE, pp. 1 4, Oc 211. [4] D. Jin and J. Del Alamo, Mehodology for he Sudy of Dynamic ON-Resisance in High-Volage GaN Field-Effec Transisors, Elecron Devices, IEEE Transacions on, vol. 6, pp , Oc 213. [5] G. Cao, A. Ansari, and H.-J. Kim, A New Circui o Evaluae Curren Collapse Effec of GaN HEMTs Under Pracical Condiions, Insrumenaion and, IEEE Transacions on, vol. 64, pp , July 215.
7 [6] R. Gelagaev, P. Jacqmaer, and J. Driesen, A Fas Volage Clamp Circui for he Accurae of he Dynamic ON-Resisance of Power Transisors, Indusrial Elecronics, IEEE Transacions on, vol. 62, pp , Feb 215. [7] R. Chu, A. Corrion, M. Chen, R. Li, D. Wong, D. Zehnder, B. Hughes, and K. Bouros, 12-V Normally Off GaN-on-Si Field-Effec Transisors Wih Low Dynamic on -Resisance, Elecron Device Leers, IEEE, vol. 32, pp , may 211. [8] J. Bocker, H. Jus, O. Hil, N. Badawi, J. Wurfl, and S. Dieckerhoff, Experimenal analysis and modeling of GaN normally-off HFETs wih rapping effecs, in Power Elecronics and Applicaions (EPE 15 ECCE- Europe), h European Conference on, pp. 1 1, Sep 215.
Pulse Train Controlled PCCM Buck-Boost Converter Ming Qina, Fangfang Lib
5h Inernaional Conference on Environmen, Maerials, Chemisry and Power Elecronics (EMCPE 016 Pulse Train Conrolled PCCM Buck-Boos Converer Ming Qina, Fangfang ib School of Elecrical Engineering, Zhengzhou
More informationLecture 5: DC-DC Conversion
1 / 31 Lecure 5: DC-DC Conversion ELEC-E845 Elecric Drives (5 ECTS) Mikko Rouimo (lecurer), Marko Hinkkanen (slides) Auumn 217 2 / 31 Learning Oucomes Afer his lecure and exercises you will be able o:
More informationProceedings of International Conference on Mechanical, Electrical and Medical Intelligent System 2017
on Mechanical, Elecrical and Medical Inelligen Sysem 7 Consan On-ime Conrolled Four-phase Buck Converer via Saw-oohwave Circui and is Elemen Sensiiviy Yi Xiong a, Koyo Asaishi b, Nasuko Miki c, Yifei Sun
More informationP. Bruschi: Project guidelines PSM Project guidelines.
Projec guidelines. 1. Rules for he execuion of he projecs Projecs are opional. Their aim is o improve he sudens knowledge of he basic full-cusom design flow. The final score of he exam is no affeced by
More informationInvestigation and Simulation Model Results of High Density Wireless Power Harvesting and Transfer Method
Invesigaion and Simulaion Model Resuls of High Densiy Wireless Power Harvesing and Transfer Mehod Jaber A. Abu Qahouq, Senior Member, IEEE, and Zhigang Dang The Universiy of Alabama Deparmen of Elecrical
More informationAN303 APPLICATION NOTE
AN303 APPLICATION NOTE LATCHING CURRENT INTRODUCTION An imporan problem concerning he uilizaion of componens such as hyrisors or riacs is he holding of he componen in he conducing sae afer he rigger curren
More informationPower losses in pulsed voltage source inverters/rectifiers with sinusoidal currents
ree-wheeling diode Turn-off power dissipaion: off/d = f s * E off/d (v d, i LL, T j/d ) orward power dissipaion: fw/t = 1 T T 1 v () i () d Neglecing he load curren ripple will resul in: fw/d = i Lavg
More informationM2 3 Introduction to Switching Regulators. 1. What is a switching power supply? 2. What types of switchers are available?
M2 3 Inroducion o Swiching Regulaors Objecive is o answerhe following quesions: 1. Wha is a swiching power supply? 2. Wha ypes of swichers are available? 3. Why is a swicher needed? 4. How does a swicher
More informationA1 K. 12V rms. 230V rms. 2 Full Wave Rectifier. Fig. 2.1: FWR with Transformer. Fig. 2.2: Transformer. Aim: To Design and setup a full wave rectifier.
2 Full Wave Recifier Aim: To Design and seup a full wave recifier. Componens Required: Diode(1N4001)(4),Resisor 10k,Capacior 56uF,Breadboard,Power Supplies and CRO and ransformer 230V-12V RMS. + A1 K B1
More informationECMA st Edition / June Near Field Communication Wired Interface (NFC-WI)
ECMA-373 1 s Ediion / June 2006 Near Field Communicaion Wired Inerface (NFC-WI) Sandard ECMA-373 1 s Ediion / June 2006 Near Field Communicaion Wired Inerface (NFC-WI) Ecma Inernaional Rue du Rhône 114
More informationExplanation of Maximum Ratings and Characteristics for Thyristors
8 Explanaion of Maximum Raings and Characerisics for Thyrisors Inroducion Daa shees for s and riacs give vial informaion regarding maximum raings and characerisics of hyrisors. If he maximum raings of
More information4.5 Biasing in BJT Amplifier Circuits
4/5/011 secion 4_5 Biasing in MOS Amplifier Circuis 1/ 4.5 Biasing in BJT Amplifier Circuis eading Assignmen: 8086 Now le s examine how we C bias MOSFETs amplifiers! f we don bias properly, disorion can
More informationA New Voltage Sag and Swell Compensator Switched by Hysteresis Voltage Control Method
Proceedings of he 8h WSEAS Inernaional Conference on ELECTRIC POWER SYSTEMS, HIGH VOLTAGES, ELECTRIC MACHINES (POWER '8) A New Volage Sag and Swell Compensaor Swiched by Hyseresis Volage Conrol Mehod AMIR
More informationTable of Contents. 3.0 SMPS Topologies. For Further Research. 3.1 Basic Components. 3.2 Buck (Step Down) 3.3 Boost (Step Up) 3.4 Inverter (Buck/Boost)
Table of Conens 3.0 SMPS Topologies 3.1 Basic Componens 3.2 Buck (Sep Down) 3.3 Boos (Sep Up) 3.4 nverer (Buck/Boos) 3.5 Flyback Converer 3.6 Curren Boosed Boos 3.7 Curren Boosed Buck 3.8 Forward Converer
More informationMultiple Load-Source Integration in a Multilevel Modular Capacitor Clamped DC-DC Converter Featuring Fault Tolerant Capability
Muliple Load-Source Inegraion in a Mulilevel Modular Capacior Clamped DC-DC Converer Feauring Faul Toleran Capabiliy Faisal H. Khan, Leon M. Tolber The Universiy of Tennessee Elecrical and Compuer Engineering
More informationPrimary Side Control SMPS with Integrated MOSFET
General Descripion GG64 is a primary side conrol SMPS wih an inegraed MOSFET. I feaures programmable cable drop compensaion and a peak curren compensaion funcion, PFM echnology, and a CV/CC conrol loop
More informationDevelopment of Temporary Ground Wire Detection Device
Inernaional Journal of Smar Grid and Clean Energy Developmen of Temporary Ground Wire Deecion Device Jing Jiang* and Tao Yu a Elecric Power College, Souh China Universiy of Technology, Guangzhou 5164,
More informationGG6005. General Description. Features. Applications DIP-8A Primary Side Control SMPS with Integrated MOSFET
General Descripion GG65 is a primary side conrol PSR SMPS wih an inegraed MOSFET. I feaures a programmable cable drop compensaion funcion, PFM echnology, and a CV/CC conrol loop wih high reliabiliy and
More informationSimulation Analysis of DC-DC Circuit Based on Simulink in Intelligent Vehicle Terminal
Open Access Library Journal 218, Volume 5, e4682 ISSN Online: 2333-9721 ISSN Prin: 2333-975 Simulai Analysis of DC-DC Circui Based Simulink in Inelligen Vehicle erminal Weiran Li, Guoping Yang College
More informationControl and Protection Strategies for Matrix Converters. Control and Protection Strategies for Matrix Converters
Conrol and Proecion Sraegies for Marix Converers Dr. Olaf Simon, Siemens AG, A&D SD E 6, Erlangen Manfred Bruckmann, Siemens AG, A&D SD E 6, Erlangen Conrol and Proecion Sraegies for Marix Converers To
More informationFamily of Single-Inductor Multi-Output DC-DC Converters
PEDS009 Family of Single-Inducor Muli-Oupu DC-DC Converers Ray-ee in Naional Cheng Kung Universiy No., a-hseuh Road ainan Ciy, aiwan rayleelin@ee.ncku.edu.w Chi-Rung Pan Naional Cheng Kung Universiy No.,
More informationAN5028 Application note
Applicaion noe Calculaion of urn-off power losses generaed by an ulrafas diode Inroducion This applicaion noe explains how o calculae urn-off power losses generaed by an ulrafas diode, by aking ino accoun
More informationDead Zone Compensation Method of H-Bridge Inverter Series Structure
nd Inernaional Conference on Elecrical, Auomaion and Mechanical Engineering (EAME 7) Dead Zone Compensaion Mehod of H-Bridge Inverer Series Srucure Wei Li Insiue of Elecrical Engineering and Informaion
More informationORDER INFORMATION TO pin 320 ~ 340mV AMC7150DLF
www.addmek.com DESCRIPTI is a PWM power ED driver IC. The driving curren from few milliamps up o 1.5A. I allows high brighness power ED operaing a high efficiency from 4Vdc o 40Vdc. Up o 200KHz exernal
More information10. The Series Resistor and Inductor Circuit
Elecronicsab.nb 1. he Series esisor and Inducor Circui Inroducion he las laboraory involved a resisor, and capacior, C in series wih a baery swich on or off. I was simpler, as a pracical maer, o replace
More informationEE 330 Lecture 24. Amplification with Transistor Circuits Small Signal Modelling
EE 330 Lecure 24 Amplificaion wih Transisor Circuis Small Signal Modelling Review from las ime Area Comparison beween BJT and MOSFET BJT Area = 3600 l 2 n-channel MOSFET Area = 168 l 2 Area Raio = 21:1
More informationCommunication Systems. Department of Electronics and Electrical Engineering
COMM 704: Communicaion Lecure : Analog Mulipliers Dr Mohamed Abd El Ghany Dr. Mohamed Abd El Ghany, Mohamed.abdel-ghany@guc.edu.eg nroducion Nonlinear operaions on coninuous-valued analog signals are ofen
More informationLinear PFC regulator for LED lighting with the multi-level structure and low voltage MOSFETs.
Linear PFC regulaor for lighing wih he muli-level srucure and low volage MOSFETs. Yuichi Noge Nagaoka Universiy of Technology Niigaa, Japan noge@sn.nagaokau.ac.jp Jun-ichi Ioh Nagaoka Universiy of Technology
More informationPhase-Shifting Control of Double Pulse in Harmonic Elimination Wei Peng1, a*, Junhong Zhang1, Jianxin gao1, b, Guangyi Li1, c
Inernaional Symposium on Mechanical Engineering and Maerial Science (ISMEMS 016 Phase-Shifing Conrol of Double Pulse in Harmonic Eliminaion Wei Peng1, a*, Junhong Zhang1, Jianxin gao1, b, Guangyi i1, c
More information7 th International Conference on DEVELOPMENT AND APPLICATION SYSTEMS S u c e a v a, R o m a n i a, M a y 27 29,
7 h Inernaional Conference on DEVEOPMENT AND APPICATION SYSTEMS S u c e a v a, o m a n i a, M a y 27 29, 2 0 0 4 THEE-PHASE AC CHOPPE WITH IGBT s Ovidiu USAU 1, Mihai UCANU, Crisian AGHION, iviu TIGAEU
More informationISSCC 2007 / SESSION 29 / ANALOG AND POWER MANAGEMENT TECHNIQUES / 29.8
ISSCC 27 / SESSION 29 / ANALOG AND POWER MANAGEMENT TECHNIQUES / 29.8 29.8 A 3GHz Swiching DC-DC Converer Using Clock- Tree Charge-Recycling in 9nm CMOS wih Inegraed Oupu Filer Mehdi Alimadadi, Samad Sheikhaei,
More informationSynchronization of single-channel stepper motor drivers reduces noise and interference
hronizaion of single-channel sepper moor drivers reduces noise and inerference n mos applicaions, a non-synchronized operaion causes no problems. However, in some cases he swiching of he wo channels inerfere,
More informationEE 40 Final Project Basic Circuit
EE 0 Spring 2006 Final Projec EE 0 Final Projec Basic Circui Par I: General insrucion 1. The final projec will coun 0% of he lab grading, since i s going o ake lab sessions. All oher individual labs will
More informationAutomatic Power Factor Control Using Pic Microcontroller
IDL - Inernaional Digial Library Of Available a:www.dbpublicaions.org 8 h Naional Conference on Advanced Techniques in Elecrical and Elecronics Engineering Inernaional e-journal For Technology And Research-2017
More informationImpacts of the dv/dt Rate on MOSFETs Outline:
Ouline: A high dv/d beween he drain and source of he MOSFET may cause problems. This documen describes he cause of his phenomenon and is counermeasures. Table of Conens Ouline:... 1 Table of Conens...
More informationA Novel Bidirectional DC-DC Converter with Battery Protection
Inernaional Journal of Engineering Research and Developmen e-issn: 2278-067X, p-issn : 2278-800X, www.ijerd.com Volume 5, Issue 1 (November 12), PP. 46-53 A Novel Bidirecional DC-DC Converer wih Baery
More informationIntegrated Forward Half-Bridge Resonant Inverter as a High-Power-Factor Electronic Ballast
Inegraed Forward Half-Bridge Resonan Inverer as a High-Power-Facor Elecronic Ballas Absrac.- A novel single-sage high-power-facor elecronic ballas obained from he inegraion of a forward dc-o-dc converer
More informationA Control Technique for 120Hz DC Output Ripple-Voltage Suppression Using BIFRED with a Small-Sized Energy Storage Capacitor
90 Journal of Power Elecronics, Vol. 5, No. 3, July 005 JPE 5-3-3 A Conrol Technique for 0Hz DC Oupu Ripple-Volage Suppression Using BIFRED wih a Small-Sized Energy Sorage Capacior Jung-Bum Kim, Nam-Ju
More informationMemorandum on Impulse Winding Tester
Memorandum on Impulse Winding Teser. Esimaion of Inducance by Impulse Response When he volage response is observed afer connecing an elecric charge sored up in he capaciy C o he coil L (including he inside
More informationAnalysis of SiC MOSFETs under Hard and Soft- Switching
Analysis of SiC MOSFETs under Hard and Sof- Swiching M. R. Ahmed, R. Todd and A. J. Forsyh School of Elecrical and Elecronic Engineering, Power Conversion Group The Universiy of Mancheser Mancheser, U.K.
More informationStudy on the Wide Gap Dielectric Barrier Discharge Device Gaofeng Wang
Sudy on he Wide Gap Dielecric Barrier Discharge Device Gaofeng Wang School of Informaion Engineering, Zhengzhou Universiy, Zhengzhou 450001, China 932167312@qq.com Keywords: DBD; Wide air gap; Plasma body;
More informationHigh Power Full-Bridge DC-DC Converter using a Center-Tapped Transformer and a Full-Wave Type Rectifier
, pp.267-278 hp://dx.doi.org/10.14257/ijca.2014.7.4.23 High Power Full-Bridge DC-DC Converer using a Cener-Tapped Transformer and a Full-Wave Type Recifier Min-Gi Kim, Geun-Yong Park, Doo-HeeYoo and Gang-YoulJeong
More informationDesign And Implementation Of Multiple Output Switch Mode Power Supply
Inernaional Journal of Engineering Trends and Technology (IJETT) Volume Issue 0-Oc 0 Design And Implemenaion Of Muliple Oupu Swich Mode Power Supply Ami, Dr. Manoj Kumar Suden of final year B.Tech. E.C.E.,
More informationReliability Improvement of FB inverter in HID Lamp Ballast using UniFET II MOSFET family
Reliabiliy Improvemen of FB inverer in HID Lamp Ballas using UniFET II MOSFET family Won-Seok Kang Sysem & Applicaion Group Fairchild Semiconducor Bucheon, Korea wonseok.kang@fairchildsemi.com Jae-Eul
More informationCURRENT MODE PWM+PFM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET
CURRENT MODE PWM+PFM CONTROLLER WITH BUILT-IN HIGH VOLTAGE MOSFET DESCRIPTION SD6835 is curren mode PWM+PFM conroller used for SMPS wih buil-in high-volage MOSFET and exernal sense resisor. I feaures low
More informationChapter 1: Introduction
Second ediion ober W. Erickson Dragan Maksimovic Universiy of Colorado, Boulder.. Inroducion o power processing.. Some applicaions of power elecronics.3. Elemens of power elecronics Summary of he course.
More informationAccurate Tunable-Gain 1/x Circuit Using Capacitor Charging Scheme
Accurae Tunable-Gain 1/x Circui Using Capacior Charging Scheme Byung-Do Yang and Seo Weon Heo This paper proposes an accurae unable-gain 1/x circui. The oupu volage of he 1/x circui is generaed by using
More informationComparative Analysis of the Large and Small Signal Responses of "AC inductor" and "DC inductor" Based Chargers
Comparaive Analysis of he arge and Small Signal Responses of "AC inducor" and "DC inducor" Based Chargers Ilya Zelser, Suden Member, IEEE and Sam Ben-Yaakov, Member, IEEE Absrac Two approaches of operaing
More informationEE201 Circuit Theory I Fall
EE1 Circui Theory I 17 Fall 1. Basic Conceps Chaper 1 of Nilsson - 3 Hrs. Inroducion, Curren and Volage, Power and Energy. Basic Laws Chaper &3 of Nilsson - 6 Hrs. Volage and Curren Sources, Ohm s Law,
More informationProgrammable DC Electronic Load 8600 Series
Daa Shee Programmable DC Elecronic Load The programmable DC elecronic loads provide he performance of modular sysem DC elecronic loads in a compac benchop form facor. Wih fas ransien operaion speeds and
More informationProgrammable DC Electronic Loads 8600 Series
Daa Shee Programmable DC Elecronic Loads The programmable DC elecronic loads provide he performance of modular sysem DC elecronic loads in a compac benchop form facor. Wih fas ransien operaion speeds and
More informationDevelopment of Pulse Width Modulation LED drive
ISSN 23069392, Inernaional Journal of Technology People Developing, Vol. 2, No. 3, DEC. 2012 Developmen of Pulse Widh Modulaion LED drive YuanPiao. Lee 1 ShihKuen. Changchien 2 ChainKuo Technology Universiy,
More informationAleksandrs Andreiciks, Riga Technical University, Ingars Steiks, Riga Technical University, Oskars Krievs, Riga Technical University
Scienific Journal of Riga Technical Universiy Power and Elecrical Engineering Curren-fed Sep-up DC/DC Converer for Fuel Cell Applicaions wih Acive Overvolage Clamping Aleksandrs Andreiciks, Riga Technical
More informationAn Improved Zero-Voltage-Transition Technique in a Single-Phase Active Power Factor Correction Circuit
An Improved Zero-lage-Transiion Technique in a Single-Phase Acive Power Facor Correcion Circui Suriya Kaewarsa School of Elecrical Engineering, Rajamangala Universiy of Technology Isan Sakon Nakhon Campus,
More informationFully Integrated DC-DC Buck Converter
1 Fully Inegraed DC-DC Buck Converer Carlos Eldio Azevedo, João Caldinhas Vaz and Pedro Sanos Insiuo Superior Técnico, Av. Rovisco Pais 1, 1049-001, isbon, Porugal Absrac - This disseraion presens he design
More informationApplication Note 5324
Desauraion Faul Deecion Opocoupler Gae Drive Producs wih Feaure: PLJ, PL0J, PLJ, PL1J and HCPLJ Applicaion Noe 1. Inroducion A desauraion faul deecion circui provides proecion for power semiconducor swiches
More informationECMA-373. Near Field Communication Wired Interface (NFC-WI) 2 nd Edition / June Reference number ECMA-123:2009
ECMA-373 2 nd Ediion / June 2012 Near Field Communicaion Wired Inerface (NFC-WI) Reference number ECMA-123:2009 Ecma Inernaional 2009 COPYRIGHT PROTECTED DOCUMENT Ecma Inernaional 2012 Conens Page 1 Scope...
More informationDiodes. Diodes, Page 1
Diodes, Page 1 Diodes V-I Characerisics signal diode Measure he volage-curren characerisic of a sandard signal diode, he 1N914, using he circui shown below. The purpose of he back-o-back power supplies
More informationBootstrap Gate Driver and Output Filter of An SC-based Multilevel Inverter for Aircraft APU
Asian Power Elecronics Journal, Vol. 9, No. 2, Dec. 215 Boosrap Gae Driver and Oupu Filer o An C-based Mulilevel Inverer or Aircra APU Yuanmao YE,K.W.Eric CHENG, N.C. Cheung Power Elecronics Research Cenre,
More information16.5 ADDITIONAL EXAMPLES
16.5 ADDITIONAL EXAMPLES For reiew purposes, more examples of boh piecewise linear and incremenal analysis are gien in he following subsecions. No new maerial is presened, so readers who do no need addiional
More informationThree-Level TAIPEI Rectifier
Three-Level TAIPEI Recifier Yungaek Jang, Milan M. Jovanović, and Juan M. Ruiz Power Elecronics Laboraory Dela Producs Corporaion 5101 Davis Drive, Research Triangle Park, C, USA Absrac A new low-cos,
More informationInternational Journal of Electronics and Electrical Engineering Vol. 4, No. 2, April Supercapacitors
Inernaional Journal of Elecronics and Elecrical Engineering Vol. 4, No., April 16 Equalizaion Chargers Using Parallel- or SeriesParallel-Resonan Inverer for Series-Conneced Supercapaciors Yifan Zhou and
More informationJPE Soon-Kurl Kwon, Bishwajit Saha *, Sang-Pil Mun *, Kazunori Nishimura ** *, *** and Mutsuo Nakaoka. 1. Introduction
18 Journal of Power Elecronics, Vol. 9, No. 1, January 2009 JPE 9-1-2 Series Resonan ZCS- PFM DC-DC Converer using High Frequency Transformer Parasiic Inducive Componens and Lossless Inducive Snubber for
More informationEXPERIMENT #9 FIBER OPTIC COMMUNICATIONS LINK
EXPERIMENT #9 FIBER OPTIC COMMUNICATIONS LINK INTRODUCTION: Much of daa communicaions is concerned wih sending digial informaion hrough sysems ha normally only pass analog signals. A elephone line is such
More informationVOLTAGE DOUBLER BOOST RECTIFIER BASED ON THREE-STATE SWITCHING CELL FOR UPS APPLICATIONS
VOLTAGE DOUBLER BOOST RECTIFIER BASED ON THREE-STATE SWITCHING CELL FOR UPS APPLICATIONS Raphael A. da Câmara, Ranoyca N. A. L. Silva, Gusavo A. L. Henn, Paulo P. Praça, Cícero M. T. Cruz, René P. Torrico-Bascopé
More informationA Novel Concept for Transformer Volt Second Balancing of a VIENNA Rectifier III Based on Direct Magnetizing Current Measurement
A Novel Concep for ransformer Vol Second Balancing of a VIENNA Recifier III Based on Direc Magneizing Curren Measuremen Franz Sögerer Johann W. Kolar Uwe Drofenik echnical Universiy Vienna Dep. of Elecrical
More informationMODELING OF CROSS-REGULATION IN MULTIPLE-OUTPUT FLYBACK CONVERTERS
MODELING OF CROSS-REGULATION IN MULTIPLE-OUTPUT FLYBACK CONVERTERS Dragan Maksimovićand Rober Erickson Colorado Power Elecronics Cener Deparmen of Elecrical and Compuer Engineering Universiy of Colorado,
More informationExperiment 6: Transmission Line Pulse Response
Eperimen 6: Transmission Line Pulse Response Lossless Disribued Neworks When he ime required for a pulse signal o raverse a circui is on he order of he rise or fall ime of he pulse, i is no longer possible
More informationHow to Shorten First Order Unit Testing Time. Piotr Mróz 1
How o Shoren Firs Order Uni Tesing Time Pior Mróz 1 1 Universiy of Zielona Góra, Faculy of Elecrical Engineering, Compuer Science and Telecommunicaions, ul. Podgórna 5, 65-246, Zielona Góra, Poland, phone
More informationEXPERIMENT #4 AM MODULATOR AND POWER AMPLIFIER
EXPERIMENT #4 AM MODULATOR AND POWER AMPLIFIER INTRODUCTION: Being able o ransmi a radio frequency carrier across space is of no use unless we can place informaion or inelligence upon i. This las ransmier
More informationThree phase full Bridge with Trench MOSFETs in DCB isolated high current package
MTI2WX75GD Three phase full Bridge wih Trench MOSFETs in DCB isolaed high curren package S = 75 V 25 = 255 R DSon yp. = 1.1 mw Par number MTI2WX75GD G1 L1+ L2+ T1 T3 T5 G3 G5 L3+ Surface Moun Device S1
More informationPower Efficient Battery Charger by Using Constant Current/Constant Voltage Controller
Circuis and Sysems, 01, 3, 180-186 hp://dx.doi.org/10.436/cs.01.304 Published Online April 01 (hp://www.scirp.org/journal/cs) Power Efficien Baery Charger by Using Consan Curren/Consan olage Conroller
More informationState Space Modeling, Simulation and Comparative Analysis of a conceptualised Electrical Control Signal Transmission Cable for ROVs
Sae Space Modeling, Simulaion and omparaive Analysis of a concepualised Elecrical onrol Signal ransmission able for ROVs James Naganda, Deparmen of Elecronic Engineering, Konkuk Universiy, Seoul, Korea
More informationDirect Analysis of Wave Digital Network of Microstrip Structure with Step Discontinuities
Direc Analysis of Wave Digial Nework of Microsrip Srucure wih Sep Disconinuiies BILJANA P. SOŠIĆ Faculy of Elecronic Engineering Universiy of Niš Aleksandra Medvedeva 4, Niš SERBIA MIODRAG V. GMIROVIĆ
More informationHF Transformer Based Grid-Connected Inverter Topology for Photovoltaic Systems
1 HF Transformer Based Grid-Conneced Inverer Topology for Phoovolaic Sysems Abhiji Kulkarni and Vinod John Deparmen of Elecrical Engineering, IISc Bangalore, India. (abhijik@ee.iisc.erne.in, vjohn@ee.iisc.erne.in)
More informationECE-517 Reinforcement Learning in Artificial Intelligence
ECE-517 Reinforcemen Learning in Arificial Inelligence Lecure 11: Temporal Difference Learning (con.), Eligibiliy Traces Ocober 8, 2015 Dr. Iamar Arel College of Engineering Deparmen of Elecrical Engineering
More information4 20mA Interface-IC AM462 for industrial µ-processor applications
Because of he grea number of indusrial buses now available he majoriy of indusrial measuremen echnology applicaions sill calls for he sandard analog curren nework. The reason for his lies in he fac ha
More informationProgrammable DC Electronic Loads 8600 Series
Daa Shee Programmable DC Elecronic Loads 99 Washingon Sree Melrose, MA 02176 Phone 781-665-1400 Toll Free 1-800-517-8431 Visi us a www.tesequipmendepo.com 2U half-rack 3U 6U USB RS232 GPIB The programmable
More informationUndamped, Length Varying TLP Pulses Measurements and ESD Model Approximations
Undamped, Lengh arying TLP Pulses Measuremens and ESD Model Approximaions Gonzalo Andrés Pacheco, Julio Guillermo Zola Elecronic Circuis Laboraory Elecronic Deparmen Faculy of Engineering Universiy of
More informationPROFET BTS 736 L2. Smart High-Side Power Switch Two Channels: 2 x 40mΩ Status Feedback
PROFET BTS 736 2 Smar igh-side Power Swich Two Channels: 2 x 40mΩ Saus Feedback Produc Summary Package Operaing olage bb(on) 4.75...41 Acive channels one wo parallel On-sae Resisance R ON 40mΩ 20mΩ Nominal
More informationTHE OSCILLOSCOPE AND NOISE. Objectives:
-26- Preparaory Quesions. Go o he Web page hp://www.ek.com/measuremen/app_noes/xyzs/ and read a leas he firs four subsecions of he secion on Trigger Conrols (which iself is a subsecion of he secion The
More informationPower Control of Resonant Converter MPPT by Pulse Density Modulation
Power Conrol of Resonan Converer MPPT by Pulse Densiy Modulaion Akif Karafil 1, Harun Ozbay 2, and Selim Oncu 3 1,2 Bilecik Seyh Edebali Universiy, Bilecik, Turkey akif.karafil@bilecik.edu.r, harun.ozbay@bilecik.edu.r
More informationDATA SHEET. 1N914; 1N916 High-speed diodes DISCRETE SEMICONDUCTORS Sep 03
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes daa of April 1996 File under Discree Semiconducors, SC01 1996 Sep 03 FEATURES Hermeically sealed leaded glass SOD27 (DO-35) package High swiching speed:
More informationHigh Chopper Frequency Drive of Wound Rotor Induction Motor With a Resistively Loaded Rotor Chopper
High Chopper Frequency Drive o Wound Roor Inducion Moor Wih a Resisively Loaded Roor Chopper Hilmi Fadhil Amin Salahaddin Universiy-Erbil Elecrical Enginnering Deparmen hilmi_adhil @yahoo.com ABSTACT This
More informationAnalog Circuits EC / EE / IN. For
Analog Circuis For EC / EE / IN By www.hegaeacademy.com Syllabus Syllabus for Analog Circuis Small Signal Equivalen Circuis of Diodes, BJTs, MOSFETs and Analog CMOS. Simple Diode Circuis, Clipping, Clamping,
More information= f 8 f 2 L C. i C. 8 f C. Q1 open Q2 close (1+D)T DT 2. i C = i L. Figure 2: Typical Waveforms of a Step-Down Converter.
Inroducion Oupu Volage ipple in Sep-Down and Sep-Up Swiching egulaors Oupu volage ripple is always an imporan performance parameer wih DC-DC converers. For inducor-based swiching regulaors, several key
More informationObsolete Product(s) - Obsolete Product(s)
DUAL SWITCH-MODE SOLENOID DRIER HIGH CURRENT CAPABILITY (up o.5a per channel) HIGH OLTAGE OPERATI (up o 46 for power sage) HIGH EFFICIENCY SWITCHMODE OPERATI REGULATED OUTPUT CURRENT (adjusable) FEW EXTERNAL
More informationCoolMOS 1) Power MOSFET ISOPLUS - electrically isolated surface to heatsink Surface Mount Power Device
CoolMOS 1) Power MOSFET ISOPLUS - elecrically isolaed surface o heasink Surface Moun Power Device S = V 25 = R DS(on) max = 45 mw Preliminary daa G KS D T D K Isolaed surface o heasink D K 3x S G KS nc
More informationSolid State Modulators for PIII Applications
Solid Sae Modulaors for P Applicaions Dr. Marcel P.J. Gaudreau, P.E., Dr. Jeffrey A. Casey, Timohy J. Hawkey, Michael A. Kempkes, J. Michael Mulvaney; Diversified Technologies, nc. Absrac One of he key
More informationBOUNCER CIRCUIT FOR A 120 MW/370 KV SOLID STATE MODULATOR
BOUNCER CIRCUIT FOR A 120 MW/370 KV SOLID STATE MODULATOR D. Gerber, J. Biela Laboraory for High Power Elecronic Sysems ETH Zurich, Physiksrasse 3, CH-8092 Zurich, Swizerland Email: gerberdo@ehz.ch This
More informationA ZVS Integrated Single-Input-Dual-Output DC/DC Converter for High Step-up Applications
A ZS Inegraed Single-Inpu-Dual-Oupu / Converer for High Sep-up Applicaions Ming Shang, Suden Member, IEEE, Haoyu Wang, Member, IEEE School of Informaion Science and Technology ShanghaiTech Universiy Shanghai,
More information<Diode Modules> RM200CY-24S HIGH POWER SWITCHING USE INSULATED TYPE
dual swich (Cahode Common) Forward curren...... 2 0 0 A Repeiive peak reverse volage V RRM... 1 2 0 0 V Maximum juncion emperaure T jmax... 1 5 0 C Fla base Type Copper base plae RoHS Direcive
More informationFROM ANALOG TO DIGITAL
FROM ANALOG TO DIGITAL OBJECTIVES The objecives of his lecure are o: Inroduce sampling, he Nyquis Limi (Shannon s Sampling Theorem) and represenaion of signals in he frequency domain Inroduce basic conceps
More informationA Bidirectional Three-Phase Push-Pull Converter With Dual Asymmetrical PWM Method
A Bidirecional Three-Phase Push-Pull Converer Wih Dual Asymmeral PWM Mehod Minho Kwon, Junsung Par, Sewan Choi, IEEE Senior Member Deparmen of Elecral and Informaion Engineering Seoul Naional Universiy
More informationAn Open-Loop Class-D Audio Amplifier with Increased Low-Distortion Output Power and PVT-Insensitive EMI Reduction
Paper 8-6 An Open-Loop Class-D Audio Amplifier wih Increased Low-Disorion Oupu Power and PVT-Insensiive EMI Reducion Shih-Hsiung Chien 1, Li-Te Wu 2, Ssu-Ying Chen 2, Ren-Dau Jan 2, Min-Yung Shih 2, Ching-Tzung
More informationPower Loss Research on IGCT-applied NPC Three-level Converter
ELKOMNIKA Indonesian Journal of Elecrical Engineering Vol.2, No.7, July 204, pp. 554 ~ 562 DOI: 0.59/elkomnika.v2i7.5908 554 Power Loss Research on IGC-applied NPC hree-level Converer Dong Xu*, Min-Xiao
More informationATEE Adriana FLORESCU
SWITCHING POWER SUPPLY WITH MONOLITHIC SWITCHING REGULATOR SUBSYSTEMS AND DC-DC STEP-UP CONERTER PART B: Design Example, Pspice Simulaion, Pracical Consideraions, Experimenal Resuls Adriana FLORESCU Poliehnica
More informationSignal Characteristics
Signal Characerisics Analog Signals Analog signals are always coninuous (here are no ime gaps). The signal is of infinie resoluion. Discree Time Signals SignalCharacerisics.docx 8/28/08 10:41 AM Page 1
More informationSmart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense
POFET Smar High-Side Power Swich Two Channels: 2 x 3mΩ Curren Sense Produc Summary Package Operaing olage (on) 5...34 Acive channels one wo parallel On-sae esisance ON 3mΩ 15mΩ Nominal load curren (NOM)
More informationTransformer of tgδ on MSP430F1331 single chip microcomputer WANG Han 1 CAI Xinjing 1,XiaoJieping 2,Liu weiqing 2
2nd Inernaional Workshop on Maerials Engineering and ompuer Sciences (IWMES 205 Transformer of gδ on MSP430F33 single chip microcompuer WANG Han AI Xinjing,XiaoJieping 2,Liu weiqing 2 School of elecrical
More information