Power Loss Research on IGCT-applied NPC Three-level Converter

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1 ELKOMNIKA Indonesian Journal of Elecrical Engineering Vol.2, No.7, July 204, pp. 554 ~ 562 DOI: 0.59/elkomnika.v2i Power Loss Research on IGC-applied NPC hree-level Converer Dong Xu*, Min-Xiao Han, and Lei Wan 2 Norh China Elecric Power Universiy, Beinong Road, Beijing, P.R.China, China Elecric Power Research Insiue *Corresponding auhor, xudong_ncepu@63.com Absrac IGC has a broad applicaion prospecs in high power conversion such as flexible DC ransmission due o is characerisics of high volage and large capaciy. Compared wih IGB i has a volage and curren level of 4.5kV/4kA and is slope resisance is less han IGB s. In addiion, due o he di/d snubber circui, IGC s opening loss will be reduced. Because of improvemen of IGC performance, he loss of IGC-applied hree-level converer will have some new characerisics, so i is necessary o model he IGC-ype hree-level converer. Based on piecewise linear curve fiing mehod, he IGC swiching loss mahemaical model is esablished firsly. Wih is use in IGC-ype hree-level converer loss model, a IGC-ype hree-level converer mahemaical model is esablished. If he model is applied in he ±200kV flexible DC ransmission s calculaion example, i can be concluded ha he loss rae is 0.3%- 0.78% when he power facor angle changes beween 0 and π, while he loss rae of IGB-ype converer under same volage level is 2%-3.5%, so i can be concluded ha IGC is more suiable han IGB for use in high volage and large capaciy siuaion such as frequency conrol of moor speed and flexible DC ransmission. Keywords: IGC, hree-level, loss model, power facor angle, flexible DC ransmission Copyrigh 204 Insiue of Advanced Engineering and Science. All righs reserved.. Inroducion IGC is he generic erm of inegraed gae drive circui and he gae converer hyrisor. Compared wih IGB, IGC has several advanages: i has a higher volage and curren level (4.5kV/4kA), i also has a lower slope resisance []. Due o hese advanages, IGC has a broad applicaion prospecs in flexible DC ransmission. hree-level will be a reasonable srucure for he IGC-ype converer, because i no only raises volage level, i also reduces he problem of excessive harmonic conen. hree-level converer is simpler and more reliable han opology wih more levels. Consequenly, ABB will adop he IGC-ype hree-level converer in fuure medium volage frequency conrol and flexible DC ransmission projec. Currenly, he loss of a IGB-ype converer has been analyzed sysemaically, bu here is no profound analysis for a IGC-ype converer. In [2], circui simulaion using physical model is adoped, bu he swiching process is very shor(less han 0us [3]) and very complex, so simulaion sep is usually se o 0ns. Bu i is no applicable in he simulaion of flexible DC ransmission. Anoher mehod is esimaing he loss using he daa shee provided by he IGC manufacures, bu i canno accuraely calculae he loss of a converer [4]. he mehod adoped in his aricle is an exension of he piecewise linear curve fiing approach [5] and i akes he reverse recovery process of ani-parallel diodes and sray inducance of he line ino consideraion. On his basis, his aricle analyzes he IGC-ype hree-level converer loss characerisics, and analyzes he impac of he swiching frequency and power facor on loss. 2. he Swiching Process of IGC and diode Because he volage and curren canno change suddenly wheher power devices are in urn-on or urn-off process, he swiching loss caused can be expressed as: E 0 on/ off () () 0 V I d () Received February 3, 204; Revised March 2, 204; Acceped March 27, 204

2 ELKOMNIKA ISSN: Where is he duraion of urn-on or urn-off process, 0 is he beginning ime of urn-on or urn-off process. 2.. he urn-on Process of IGC In [3], he waveform of IGC urn-on process had been drawn hrough experimen. he diagram obained by curve fiing mehod is shown in Figure. When IGC is in he urn-on process, he curren begins o rise only afer he volage almos declines o 0, so he urn-on loss is minimal. Because IGC usually works under raed volage, he loss can be considered only as he funcion of curren. Assuming E on is urn-on loss, is he operaing curren, I N is he es curren provided by daa shee, E onn is he corresponding urn-on loss, he urn-on loss under differen curren can be expressed as: E i E L ( on) ( on) N I N (2) V, I V 0.9V rrb rra I rrm I () 0.V d( on) r V ( on) 0( on) ( on) 2( on ) V () Figure. Diagram of he IGC urn-on ransien Waveform 2.2. he urn-off Process of IGC According o he experimenal waveforms in [3], he diagram of IGC urn-off process is shown in Figure 2. he urn-off process is explained as follows. V, I V DSP V () I 0.8I 0.3I V d ( off ) f 0( off ) ( off ) 2( off ) 3( off ) Figure 2. Diagram of he IGC urn-off ransien Waveform I () Where, d(off) is he urn-off delay which is he inerval beween sending urn-off signal and he curren decreasing o 0.8I, f is he fall ime during which he curren decreases from 0.8I o 0.3I.V DSP is he firs volage peak induced by line sray inducance [6]. Similar o he urn-on process, he urn-off loss is expressed approximaely as he linear funcion of he curren, because he curren and volage which are influenced by snubber circui and sray inducance are no linear [7], and he urn-off ime does no change proporionally wih he curren. he experimen in [3] also shows he approximae waveform is correc. Assuming ha Power Loss Research on IGC-applied NPC hree-level Converer (Dong Xu)

3 556 ISSN: E off is he urn-off loss, is he operaing curren, I N is he es curren provided by daa shee, E offn is he corresponding urn-off loss, he urn-off loss under differen curren can be expressed as: il E( off ) E( off ) N I N (3) 2.3. he Reverse Recovery Process of Diode In he diode clamp hree-level converer commonly uses fas recovery diode whose reverse curren is minimal when urning-on, so he urn-on loss is far less han urn-off loss and can be negleced. he diagram of urn-off process waveform of diode is shown in Figure 3. Figure 3. Diagram of he Diode urn-off ransien Waveform So he diode urn-off loss can be expressed as: E E E d( off ) d d2 2 V ds Id 0 di 2 2 di 2 K Drr Vd 0 K D ( K D ) rr 2 di d d 3 d (4) Where, K D =/(+S D ), rra =K D rr, S D is he sofness of diode [8], rr is he reverse recovery ime of diode. 3. Analysis of hree-level Converer Work Process When he converer work seadily, he conrol signals for IGC on bridge arms are shown in able. able. Conrol Signal for IGC Oupu V V2 V3 V4 Denoed as +Ud/2 on on off off + 0 off on on off 0 -Ud/2 off off on on - Assuming ha he power facor angle of receiving end is θ, load curren is approximaely sinusoidal, =I m sin(ω), load volage V=U m sin(ω+θ), he relaionship beween he waveforms of curren and volage and he power devices operaion saus is shown in Figure 4. Six working saes wihin a period are shown in Figure 5. ELKOMNIKA Vol. 2, No. 7, July 204:

4 ELKOMNIKA ISSN: i I sin( ) m U U sin( ) ao m Figure 4. he Relaionship beween he Load's Volage and Curren and he Device Operaion Saus (a)sae,i_l>0 (b) Sae 0,i_L>0 (c) Sae -,i_l>0 (d) Sae,i_L<0 (e) Sae 0,i_L<0 (f) Sae -,i_l<0 Figure 5. he Flow Pah of he Load Curren under Differen Swich Sae he calculaion of duy raio of power devices: his aricle adops cophasal carrier modulaion [9, 0] which means he carriers are on op of each wih he same phase. his modulaion mehod produces a minimum harmonic in line volage oupu, as shown in Figure 6. Power Loss Research on IGC-applied NPC hree-level Converer (Dong Xu)

5 558 ISSN: msin( ) c Figure 6. Cophasal Carrier Modulaion PWM and Duy Raio he calculaed duy raio using regular sampling mehod [] is shown in able 2. able 2. Duy Raio of Swich Device Phase volage Volage level Duy raio Denoed as U >0 d /2 msin ω θ D 0 msinω θ D2 0 msinω θ D3 <0 /2 msin ω θ D4 4. he Model of hree-level Converer Loss 4.. Swiching Loss Due o differen curren in every IGC swiching process, he swiching loss is he funcion of I 0.he forward volage drop is also differen, bu i changes lile and is range has lile effec on he swiching losses. herefore i can be considered o be a fixed value which can be considered as he average value of sauraion volage drop and collecor-emier volage under raed curren. Assuming ha I k I sinω, where k is he momen of every swich, so: n P [ E E ( I ( k))] swich on off 0 k (5) Bu his calculaion mehod is very complicaed, i should be simplified which means averaging every swiching loss on he carrier s period, hen inegraing he average loss. his mehod can deermine he converer loss wihin he permied olerance [2].ake V for example: E E ( I sin( )) ( on) ( off ) m Pswich, V d 20 c (6) Where is he period of modulaing wave, c is he carrier s period, ω is angular velociy of modulaion wave. In a he same way, E E ( I sin( )) ( on) ( off ) m Pswich, V 2 d 2 c (7) ELKOMNIKA Vol. 2, No. 7, July 204:

6 ELKOMNIKA ISSN: E ( I sin( )) Doff ( ) m Pswich, VD3/ VD4 d 2 c E ( I sin( )) Doff ( ) m Pswich, VD5 d 20 c (8) (9) Where, he applied volage on every power device when urned-off is /2.In a hreelevel converer, he characerisics of four swiching devices on every bridge are almos idenical and he diodes also have he same characerisics. Assuming he load is symmerical hreephase load, so P swich,v P swich,v4 Pswich,V2 Pswich,V3 Pswich,VD5 Pswich,VD6,,, Pswich,VD3/VD4 Pswich,VD/VD2. herefore, he swiching loss of hree-level converer can be expressed as: P 3(2P 2P 2P 4 P ) swich swich, V swich, V 2 swich, VD5 swich, VD3/ VD4 (0) 4.2. On-sae loss he saic characerisics of on-sae power devices is he key o calculaing he on-sae loss of hree-level converer [3]. IGCs work on sauraion region when hey are on, so is saic characerisic can be expressed as: V R i V V V c 0 () Where R V is he slope resisance, V 0 is he sauraion volage drop which is independen of he collecor-emier curren. In he same way, he saic characerisics of diode can be expressed as: V R i V VD VD c F 0 (2) Where, R VD is he slope resisance of diodes, V F0 is he hreshold volage of diodes. aking V for example, he calculaion process of a power device of he hree-level converer loss is explained as follows. Wihin a carrier s period, he V loss can be expressed as: E ( R I sin( ) V ) I sin( ) D V V m 0 m c (3) According o [4-6], (3) can be ransformed ino differenial forms. he mean power of V wihin a period is he inegral of energy s differenial wihin he on-sae period, so he mean power loss of V is: PV dev ( RV Im sin( ) V 0) Im sin( ) Dd( ) 2 0 (4) In he similar way, he on-sae loss of V2, VD3/VD4, VD5 under PWM modulaion is: PV 2 [ ( R sin( ) 0 V Im V 0 ) Im sin( ) d ( ) 2 ( R I sin( ) V ) I sin( ) D d( )] V m 0 m 3 (5) Power Loss Research on IGC-applied NPC hree-level Converer (Dong Xu)

7 560 ISSN: P 3/ 4 ( R I sin( ) V 0) I sin( ) D4d( ) VD VD 2 VD m F m (6) PVD5 [ ( R sin( ) 0 VDIm VF 0 ) Im sin( ) D2d ( ) 2 ( RVDIm sin( ) VF 0) Im sin( ) D3d( )] 2 (7) In a hree-level converer, four swich devices and diodes in every bride have he idenical characerisics, so P V =P V4,P V2 =P V3,P VD5 =P VD6,P VD3/VD4 =P VD/VD2. herefore, he oal on-sae loss is: P 3(2P 2P 2P 4 P ) on V V 2 VD5 VD3/ VD4 (8) he expression of on-sae loss indicaes ha he on-sae loss is relaed o load curren, saic characerisics of power devices, modulaion raio (m) and power facor angle (θ) Comparison wih he Experimenal Resuls Compared o he experimenal resuls in [3], he fied value is very close o hem, as shown in able 3. All he olerances are wihin 4%, so he loss under oher curren values can be deermined by he fied curve. able 3. he Conras beween Experimenal Value and Fied Value Curren(A) Experimenal(on;J) Fied(on;J) Experimenal(off;J) Fied(off;J) Example of Loss Calculaion and Analysis he IGCs used in he loss analysis are 5SHX 26L4503, is raed volage and curren is 4500V/2200A and is off-sae resisance is 90kΩ. he ani-parallel diodes and clamping diodes are 5SDF 28L4520. he loss is calculaed in he model of ±200kV hree-level flexible DC ransmission sysem and is compared o he loss of he corresponding sysem which adops IGB. his aricle is mainly concerned wih he influence of power demand in AC sysem on loss. Assuming ha every valve bank is consised of 50 IGCs in series, equalizing resisance is 9kΩ, he modulaion raio(m) is 0. 95, he load curren rms is 400A (IGC), he AC power is 285MVA, he range of power facor angle is [0, π], he carrier frequency (f c ) is 800Hz, he consequence of (0) and (8) calculaed by MALAB is shown in Figure 7. As shown in Figure 6: () he swiching loss of IGC is far less han is on-sae loss, because is urn-on loss is very small and he swiching frequency is low. (2) he swiching and on-sae loss increase wih he power facor angle, because more curren flows from he aniparallel diodes when he power facor angle increases. Because he curren of IGC-ype converer can reach 2kA, higher raing fas recovery diodes are required. hese diodes loss in reverse recovery process and heir slope resisance all exceed IGC. hese are he differen from IGB-ype converer. he loss of IGB-ype converer decreases wih he increase of power facor angle, because he loss of fas recovery diodes used in hree-level converer is lower han IGB. (3) Compared wih he IGB-ype converer under he same volage level, he IGC-ype converer has a noiceably lower loss. he loss rae of IGC-ype converer is 0.3%- 0.79%,and he corresponding value of IGB-ype converer is.23%-3.42% and he load curren is only ka.he deailed conras is shown in able 4. ELKOMNIKA Vol. 2, No. 7, July 204:

8 ELKOMNIKA ISSN: able 4. he Relaionship beween Power Loss Rae of ±200kV hree-level Converer and he θ θ IGC(%) IGB(%) (a) Swiching loss rae (b) On-sae loss rae Figure 7. he Relaionship beween Power Loss Rae and Power Facor Angle 6. Conclusion I is difficul o calculae he loss precisely because he swiching process only lass for several microseconds. his aricle uses he IGC parameers provided by he daashee o build a mahemaical model of swiching loss of IGCs wih curren changes. his mehod provides he foundaion for he calculaion of he converer loss. hen, he model of swiching loss and on-sae loss of hree-level converer is buil based on he analysis of he hree-level converer working principal. Finally, he model of oal loss is buil. Using his mahemaical model o analyze he IGC-ype flexible DC ransmission sysem, his aricle obains new characerisic ha he loss of IGC-ype converer is far less han he IGB-ype converer. herefore, IGCs are more suiable han IGBs in large-capaciy high-pressure siuaions such as flexible DC ransmission. IGC has a lower swiching loss and on-sae loss han IGB wih a larger capaciy, so i furher improves he economics of he flexible DC ransmission. IGC will has a broad applicaion prospecs in he fuure. Acknowledgemens his work was suppored by he major projec of grea power grid launched by he Sae Grid Corporaion of China(SGCC-MPLG09-202). References [] Li Hai-shan. Research on PWM echnique and Snubber Circui for Medium Volage Large Capaciy hree-level NPC Inverer wih IGC Device. Graduae school of Chinese academy of sciences, [2] Yuan Li-qiang, Zhao Zheng-ming, Bai Hua, e al. he Funcional Model of IGCs for he Circui Simulaion of High-Volage Converers. Proceedings of he CSEE. 2004; 24(6). [3] Filsecker F, Alvarez R, Berne S. Comparison of 4.5-kV Press-Pack IGBs and IGCs for Medium- Volage Converers. ransacions on Indusrial Elecronics. 203; 60(2). [4] Rajapakse AD, Gole AM, Wilson PL. Elecromagneic ransiens simulaion models for accurae represenaion of swiching losses and hermal performance in power elecronic sysem. IEEE rans. on Power Delivery. 2005; 20(): [5] Wang Cheng-Sheng, Li Chong-jian, Li Yao-hua, e al. Analysis on he Loss of IGC. Conrol Engineering of China. 2009; 9(6). [6] Yi Rong, Zhao Zheng-ming. Research on he urn-off Characerisic of IGC Influenced by he Sray Inducance in High Power Inverers. Proceedings of he CSEE. 2007; (3). Power Loss Research on IGC-applied NPC hree-level Converer (Dong Xu)

9 562 ISSN: [7] Pan Hong-wei. Large Capaciy hree-level Recifier wih Inegraed Gae Commuaed hyrisors. Beijing Jiaoong Universiy [8] Liu Xin. Compuer Simulaions Analysis and Sudy of he Dynamic Behavior of PIN Diode. Shenyang Universiy of echnology. 202; 4. [9] Jose Rodriguez, Jih-Sheng Lai, Fang Zheng-peng. Mulilevel Inverers: A Survey of opologies, Conrols and Applicaions. IEEE rans. on Indusrial Elecronics. 2002; 49(4): [0] Suroso, Noguchi. Five-Level Common-Emier Inverer Using Reverse-Blocking IGBs. ELKOMNIKA. 202; 0(): 25~32. [] Wang Zhao-an, Liu Jin-jun. Power Elecronics. Beijing: Mechanical Indusrial Publishing House. 2009; 5. [2] Chen Quan, Wang Qun-jing, Jiang Wei-dong, e al. Analysis of Swiching Losses in Diode-Clamped hree-level Converer. ransacions of China Elecroechnical Sociey. 2008; 23(2). [3] Seyezhai R. Design, Simulaion and Hardware Implemenaion of a Muli Device Inerleaved Boos Converer for Fuel Cell Applicaions. Inernaional Journal of Power Elecronics and Drive Sysems. 204; 4(3). [4] Wang Qun-jing, Chen Quan, Jiang Wei-dong, e al. Analysis of Conducion Losses in Neural-Poin- Clamped hree-level Inverer. ransacions of China Elecroechnical Sociey. 2007; 22(3). [5] Casanellas F. Losses in PWM inverers using IGBs. IEE Proc. Elec. Power Appl., 994; 4(5): [6] Wang Mao-hai, Liu Hui-jin. A Universal Definiion of Insananeous Power and Broad-Sense Harmonic heory. Proceedings of CSEE. 200; 2(9). ELKOMNIKA Vol. 2, No. 7, July 204:

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