Cbyp. RoutCS 2N7000. Chi-CS. Cs Cbyp. CS-CC figure 1: Two stage amplifier

Size: px
Start display at page:

Download "Cbyp. RoutCS 2N7000. Chi-CS. Cs Cbyp. CS-CC figure 1: Two stage amplifier"

Transcription

1 Under construction: Let me know of any errors. Design tools for Two stage DC coupled CS CC amplifier Richard Cooper October The Two-stage amplifier will combine two amplifiers that we have already designed with some changes. We will start with the output requirement as before with the Common Collector CC as the output stage. The Common Source CS will be the input stage The Q-point for the CC will about the same as before. The base bias resistors Rb1, and Rb2 will not be use because MOSFET CS drain voltage will be the voltage supplied to the base of the BJT CC. Design the CC stage for maximum output voltage swing. Choose the voltage (Vs) on the CS stage MOSFET source between 2V and 3V. CS stage Vcc CC Stage Cbyp Cbyp Vin Rin Ri Cin Rg1 Rd 2N7000 RoutCS Chi-CS RbaseCC 2N2222 Riso Cout Vout 50 Rgen Rin2CS Vgen Rg2 Rs Cs Cbyp Re Chi-CC Rout Rload Cbyp = 0.1uF, 0.047uF, or 0.01uF CS-CC figure 1: Two stage amplifier Common Collector CC Amplifier Design Designing procedure of common collector BJT amplifier can be grouped into three systematic stages. First, we have to set the Q-point, which is the DC operating point. Since, no specification regarding the Q-point is mentioned in the design requirements; it leaves the designer enough freedom to choose the operating point as necessary for the application. However, remember that the specifications given in terms of input and output impedance, gain, Page 1 of 14

2 frequency response characteristics and peak output voltages are tight and ultimately restricts the Q-point in a narrow window. It is difficult to analytically derive this point without some intelligent guess and the following steps would work out for the given conditions. For common collector configuration, the circuit diagram is shown in CS_CCFig.1. The small signal equivalent model is provided in CC Fig.3. For this configuration, same steps are involved for the calculation of R E with few minor changes. CC Figure 2: CC BJT curve. CC Part 1: Measure the device parameters Step CC1.1: We need to estimate a Q-point to find an estimate for V CEsat, ro and β. For the design of the amplifier, the 3 parameter values required are V CEsat, r o and β. Derived from the transistor characteristics curve shown in CC Fig.2, one can set an approximate Q-point (V CE and I C) in the active region and measure ro and β. We will solve for V CE and estimate I C. Solve for V CE see below. For an estimated I C Q-point use I C 2.6 * I load this is not the solution to your design Q-point. We can use an estimated I C because ro and β will not very much with small changes in Q-point. Page 2 of 14

3 ro = ΔV CE / ΔI C the slope of a line thru the estimated Q-point. Use rocc = 4.5K β = ΔI C / ΔV CE measured around the estimated Q-point. Use β = 150 Plot the estimated Q-point (V CE, I C) on the BJT characteristics curve. From the curves CC Fig. 2 estimate V CEsat the point where the curve begins to flattens out V CEsat 0.2 Vdc CC Part 2: Find the Q-point Step CC2.1: Derive V E Q- point Iload = Vout / Rload Output signal voltage at emitter Vouteis higher. Because of Riso in series with Rload Voute = Vout + Iload *Riso We will start with V E(max) and V E(min). V CEsat = 0.2V V E(max) = Vcc V CEsat (Voute + 20%Voute) V E(min) = Vouet + 20%Voute V E = (V E(max) + V E(min)) / 2 Midpoint V E Q-point Step CC2.2: Now find the value of R E, I E, and I C Voute = Vout + Iload *Riso The DC equation: V E = R E I E The AC equation: Voute = i e ( R E r occ ( Riso + R Load ) Combined equation: Voute = V E (r occ (Riso + R Load) ) / (R E + (r occ (Riso + R Load))) Rearrange combined equation V R E = E (r V oute + 20%V occ (Riso + R L )) r occ (Riso + R L ) oute Calculate I E I E = V E / R E Calculate I C Ic = I E (β / (β + 1)) use β from data sheet β = 150 CC Part 3: Find Vb, and Vd Step CC3.1: Calculate V B and V D V B = V E + V BE Q - point values V B will be used as the V D Q-point voltage for the CS stage V D = V B Q-point CS stage Page 3 of 14

4 RoutCS VoutCS Ib Rπ E C NPN β Ib rocc Vout AC RinCC Rbase E Re Riso Rout Rload CC Figure 3: Small signal equivalent model for common collector model CC Part 4: Calculate RinCC, Rout Step CC4.1: Input Impedance of CC Use β from data sheet β = 150 Rπ = β vt / Ic and for Gain AvCC as small as possible so the VinCC will as large possible. Rbase = Rπ + (β + 1) ((rocc R E (Riso + Rload))) Impedance looking into CC BJT base. RinCC = Rbase RloadCS = RinCC The load on the CS stage will be the input impedance of CC stage Step CC4.2: CC output Impedance Moved to end of CS Step CC4.3: Calculation of AvCC Voltage Gain V oute = i b (β + 1) (R E rocc (Riso + Rload)) AC signal voltage at the emitter v out = v oute * (Rload / (Rload + Riso)) voltage divider Riso and Rload Page 4 of 14

5 AC signal voltage at input to CC stage v incc = v outcs V incc = Rπ i b + i b (β +1) (R E rocc (Riso + Rload)) V incc = i b (Rπ + (β+1) (R E rocc ( Riso + Rload)) AC signal voltage at input to the CC stage. AvCCe = v out / v incc = (β+ 1) i b (R E rocc (Riso+Rload) / i b (Rπ + (β+1) (R E rocc (Riso + Rload))) Canceling out i b AvCCe at emitter =(β + 1)(R E rocc (Riso + Rload) / (Rπ + (β+1)(r E rocc (Riso + Rload))) AvCC = ( AvCCe at emitter) (Rload / (Rload + Riso)) gain at load resistor Thus, the voltage gain should be close to 1. Hence, the output follows the input. So, the Common collector configuration is also known as Emitter follower. Step CC4.4: Calculation Ai Current Gain AiCC = AvCC (RinCC / Rload) Step CC4.5: Find AC VinCC AC signal v incc needed to check minimum and maximum range of V D Q-point v incc = v out / AvCC AC signal voltage v out is the peak output voltage required. Step CC4.6: Calculate the Minimum and Maximum V D Need Check that V B is between V D max and V Dmin Chose Vs between 2.0Vdc and 3.0Vdc. Vs Q-point We will add 20% to VinCC so the design is not on the edge of the solution. VinCC is the output voltage from CS stage required to drive the CC V D(max) = V DD - (VinCC + 20%VinCC) V D(min) = V S+V DS sat + (VinCC + 20%VinCC) Check V D(min) < V B < V D(max) DC voltage Bias point. If V B is not within CS V D range, we will need to adjust the CC Q-point. Page 5 of 14

6 Common source (CS) Designing procedure of common source MOSFET amplifier can be grouped into three systematic stages. First, we have to set the Q-point, which is the DC operating point. Since, no specification regarding the Q-point is mentioned in the design requirements, it leaves the designer enough freedom to choose the operating point as necessary for the application. However, remember that the specifications given in terms of input and output impedance, gain, frequency response characteristics and peak output voltages are fairly tight and ultimately restricts the Q-point in a narrow window. It is difficult to analytically derive this point without some intelligent guess and the following steps would work out for the given conditions. Common Source with Source Resistance Bypassed Configuration In this configuration, R S is completely bypassed. The circuit diagram with necessary variables is provided in CS Fig.1. Rsf = 0 Page 6 of 14

7 CS Figure 2: MOSFET characteristics, Example not your Q-point CS Part 1: Measure the device parameters For the design of the amplifier, the 4 parameter values required are Vds sat, V GS, r o and gm. Derived from the transistor characteristics curve shown in CS Fig.2, one can set an approximate Q-point (V DS and I D) in the active region and measure ro and gm. We will solve for V DS and estimate ID. Solve for V DS see below. Rin CC is the load seen by the CS amplifier. Where Vin CC is the AC signal required by the CC stage to produce the required Vout. VinCC = Vout / Av CC I loadcs = (Vout/Av CC ) / Rin CC Page 7 of 14

8 For an approximate I D Q-point use I D 2.2 * I loadcs this is not the solution to your design Q-point. We can use an approximate I D because ro and gm will not very much with small changes in Q- point. ro = ΔV DS / ΔI D the slope of a line thru Q-point use rocs = 8k to match LTspice gm = ΔI D / ΔV GS measured around Q-point use gm = to match LTspice Plot the estimated Q-point (V DS,I D) on the MOSFET characteristics curve. From the curves estimate V DSsat the point where the curve begins to flattens out (beyond the triode region) Vds sat 1 Vdc and V GS 2.0Vdc CS Part 2: Determine the Q-point. Start with your MOSFET and selecting 4 resistors. Step CS2.1: Choose V S Set V S = between 2V to 3V. Step CS2.2: Check the range of V D. Check range of V D selection will be able supply the required base voltage for the CC amp. We will add 20% to VinCC so the design is not on the edge of the solution. Where VinCC is the AC signal required by the CC stage to produce the required Vout. V D(max) = V DD - (VinCC + 20%VinCC) V D(min) = V S+V DS sat + (VinCC + 20%VinCC) V DS = V D V S Q-point Vds Step CS2.3: Calculate R D. Vd and VoutCS from VinCC (required input to CC) see above V D = V B Q-point Vd DC voltage VoutCS = VinCC AC signal voltage RloadCS = RinCC i Rbase = v incc / R base VinCC is AC input signal voltage to CC, i Rbase is the Iload for CS The DC equation: V DD V D = V RD= R D( I D + I B) The AC equation: VoutCS = (i d + i Rbase )( R D r ocs R incc ) Combined equation: VoutCS = V RD (r ocs R incc) / (Rc + (r ocs R incc)) V R D = DD V D (r V outcs + 20%V ocs R incc ) (r ocs R incc ) outcs Step CS2.4: Calculate I D. I RD = I D + I B = (V DD V D) / R D I D = I RD I B Thus, Q-point is (V DS,I D). Step CS2.5: Find V GS, and V G Plot the Q-point (V DS,I D) on the MOSFET characteristics curve. Page 8 of 14

9 Rin Rgen AC From the curves, find V GS. Use V GS = 2.0Vdc V G = V S + V GS Vin Ri Rin2 CS Vin2 Rg G + Vgs - NMOS D S gmvgs ro CS Rd Rout CS VoutCS RinCC RbaseCC CS Figure 3: Common Source Small Signal Equivalent Circuit CS Part 3: Determine CS bias resistors. Step CS3.1: Calculate R S. I S = I D R S = V S I S Step CS3.2: Calculate R g1, R g2. Set Rin to desired value V G = V S + V GS DC bias point Rin desired = RinW Rin2W = RinW Ri Rg1 = (Vdd / V G ) Rin2W Rg2 = Rg1 V G / (Vdd V G) Check Rin meets requierments Rin2 = Rg = Rg1 Rg2 Rin = Ri + Rin2 Page 9 of 14

10 CS Part 4: Voltage Gain of CS stage Step CS4.1: Voltage Gain of CS stage VoutCS = - gm v gs(rd rocs RinCC) Vin2 = v gs This is not the Q-point, v gs = AC input voltage to the gate. Vin = (Rin/Rin2) Vin2 AvCS = VoutCS / Vin = - gm v gs(rd rocs RinCC) / (Rin/Rin2) v gs Rearrange AvCS = - gm (Rin2/Rin) (Rd rocs RinCC) CS-CC Part 1: Calculating impedance and Gain Refer to the small signal equivalent of the circuit you have just built in CS-CC Fig. 4. The capacitor values will be calculated in the next step. We can calculate the following: Rgen AC Vin Rin Ri Rin2 CS Vin2 Rg G + Vgs - S D NMOS gmvgs ro CS VoutCS Rd Rout CS Ib B RinCC RbaseCC C Rπ E NPN β Ib Re rocc Riso Rout Vout Rload CS-CC Figure 4: Two stage Small Signal Equivalent Circuit Page 10 of 14

11 Step CS-CC1.1: Input Impedance: CS-CC CS stage Rin2CS = Rg = R g1 R g2 Rin = Rin2CS + Ri For R S completely bypassed CC stage RbaseCC = RπCC + (β + 1) ((rocc R E Rload)) Impedance looking into BJT base. RinCC = RbaseCC CS-CC input impedance Rin = Rin2CS + Ri Step CS-CC1.2: Output Impedance: CS-CC Step CS-CC4.2: Output Impedance of CC RemitterBase is the impedance looking in the BJT emitter to base. RoutCS = Rd rocs CS stage, Rs completely bypassed by Cs RemitterBase = (RπCC + RoutCS) / (β + 1) Look into the CC emitter, note we will see the RoutCS of the CS. Rout =Riso + ( R E rocc RemitterBase) output impedance of the CC stage. CS Stage RoutCS = Rd rocs CC stage Page 11 of 14

12 Referring to CC Fig.3, let us find Vout / VinCC which would be a key step in calculating Av. RemitterBase = (RπCC + RoutCS) / (β + 1) Impedance looking into the BJT emitter Rout = R E rocc RemitterBase CS-CC Output impedance Rout = Riso + (R E rocc RemitterBase) Step CS-CC1.3: Voltage Gain AvCS = - gm (Rin2/Rin) (Rd rocs RinCC) AvCC = (Rload /(Rload * Riso)) (β + 1) (R E rocc (Riso + Rload) / (Rπ + (β+1) (R E rocc (Riso + Rload)) AvCS-CC = v out / v in = AvCS * AvCC Step CS-CC1.4: Current Gain AiCS-CC = Iload / Iin = AiCS * AiCC = AvCS-CC (Rin /Rload) AiCS-CC = AvCS-CC (Rin /Rload) Frequency response of Two Stage CS CC amplifier CS-CC Part 2: Frequency response With the Q-point being set after the sequence of steps, we can go for the selection of capacitors and finally connect the signal generator at input and measure the output amplified waveform. Step CS-CC2.1: Set low frequency cutoff break points Select C incs, C outcc and C S which jointly would set the roll-off beyond the lower cut-off frequency. Set any low frequency cutoff (F L) within the range as your lower cut-off frequency range requirement. Three capacitors will introduce 3 poles in the transfer function of the system. Because we will set 3 pole at the same frequency we must use the Band Width Shrinkage factor. Page 12 of 14

13 BWshrinkage = 2 1 n 1 Where n is the number of poles for low frequency breakpoints at same frequency. Setting 3 frequencies equal, we get, n= 3 1 F CinCS = F Cout CC= F CS = F L Find the C for each breakpoint f Cin, f Cout, and f CE where n = 3. C = 1 2πf C (R seen by C) Where C is the capacitor that sets the breakpoint f C R is the Thevenin equivalent resistance seen by the capacitor. R Cin = Ri + Rgen + Rin2CS R Cs = Rs ( rocs + R D RbaseCC ) ( 1 / gm ) Step CS-CC2.2: Set high frequency cutoff break points In this case because ChiCS, and ChiCC are set to the same break point. We must use the band shrinkage factor with n = 2. We need only to find a two zeros at F h / bandshrinage = f chi = f ch2 to set the high frequency cutoff. Set FchiCS = FchiCC = Fh / ChiCS RoutCS = Rd rocs RinCC = Rbase = Rπ + (β + 1) ((rocc R E (Riso + Rload))) Impedance looking into CC BJT base. R seen by C hics R ChiCS = RoutCS RinCC C hics = 1 2πf Chi (R seen by C hics ) Page 13 of 14

14 ChiCC R seen by C hicc Looking into the CC emitter, note we will see the Rout of the CS. RemitterBase = (Rπ + RoutCS) / (β + 1) Rout = (R E rocc RemitterBase) + Riso looking in to the CC stage. R ChiCC = Rout Rload C hicc = 1 2πf Chi2 (R seen by C hicc ) The following table enlists the particular expressions. Rsig Rgen+Ri C in Rgen + Ri + Rin2CS Cout RLoad + RoutCC C S Rs ( rocs + (R D RinCC)) ( 1 / gm ) C hics C hicc RoutCS RinCC RoutCC Rload CS - CC Table 1: Resistance Seen By Capacitors Page 14 of 14

In a cascade configuration, the overall voltage and current gains are given by:

In a cascade configuration, the overall voltage and current gains are given by: ECE 3274 Two-Stage Amplifier Project 1. Objective The objective of this lab is to design and build a direct coupled two-stage amplifier, including a common-source gain stage and a common-collector buffer

More information

ClassABampDesign. Do not design for an edge. Class B push pull stage. Vdd = - Vee. For Vin < Vbe (Ri + Rin2) / Rin2

ClassABampDesign. Do not design for an edge. Class B push pull stage. Vdd = - Vee. For Vin < Vbe (Ri + Rin2) / Rin2 ClassABampDesign Richard Cooper October 17 2016 When the input signal is positive, the NPN transistor Q1 turns ON, the PNP transistor Q2 is OFF, and the output voltage is positive. The NPN transistor (emitter

More information

The MOSFET can be easily damaged by static electricity, so careful handling is important.

The MOSFET can be easily damaged by static electricity, so careful handling is important. ECE 3274 MOSFET CS Amplifier Project Richard Cooper 1. Objective This project will show the biasing, gain, frequency response, and impedance properties of the MOSFET common source (CS) amplifiers. 2. Components

More information

ECE 3274 Common-Collector (Emitter-Follower) Amplifier Project

ECE 3274 Common-Collector (Emitter-Follower) Amplifier Project ECE 3274 Common-Collector (Emitter-Follower) Amplifier Project 1. Objective This project will show the biasing, gain, frequency response, and impedance properties of a common collector amplifier. 2. Components

More information

ECE 3274 MOSFET CD Amplifier Project

ECE 3274 MOSFET CD Amplifier Project ECE 3274 MOSFET CD Amplifier Project 1. Objective This project will show the biasing, gain, frequency response, and impedance properties of the MOSFET common drain (CD) amplifier. 2. Components Qty Device

More information

ECE 3274 Common-Emitter Amplifier Project

ECE 3274 Common-Emitter Amplifier Project ECE 3274 Common-Emitter Amplifier Project 1. Objective The objective of this lab is to design and build the common-emitter amplifier with partial bypass of the emitter resistor to control the AC voltage

More information

Revised: January 26,

Revised: January 26, ECE 3274 Active Load Common Emitter Amplifier Project 1. Objective This project will show how the use of an active load in a common emitter amplifier can affect the gain open loop gain. 2. Components Qty

More information

Page 1 of 7. Power_AmpFal17 11/7/ :14

Page 1 of 7. Power_AmpFal17 11/7/ :14 ECE 3274 Power Amplifier Project (Push Pull) Richard Cooper 1. Objective This project will introduce two common power amplifier topologies, and also illustrate the difference between a Class-B and a Class-AB

More information

ECE 3274 Common-Emitter Amplifier Project

ECE 3274 Common-Emitter Amplifier Project ECE 3274 Common-Emitter Amplifier Project 1. Objective The objective of this lab is to design and build three variations of the common- emitter amplifier. 2. Components Qty Device 1 2N2222 BJT Transistor

More information

ECE 2274 MOSFET Voltmeter. Richard Cooper

ECE 2274 MOSFET Voltmeter. Richard Cooper ECE 2274 MOSFET Voltmeter Richard Cooper Pre-Lab for MOSFET Voltmeter Voltmeter design: Build a MOSFET (2N7000) voltmeter in LTspice. The MOSFETs in the voltmeter act as switches. To turn on the MOSFET.

More information

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB Experiment # 6 (Part I) Bipolar Junction Transistors Common Emitter

More information

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth

More information

The Common Source JFET Amplifier

The Common Source JFET Amplifier The Common Source JFET Amplifier Small signal amplifiers can also be made using Field Effect Transistors or FET's for short. These devices have the advantage over bipolar transistors of having an extremely

More information

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013)

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013) DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I (Regulations 2013 UNIT-1 Part A 1. What is a Q-point? [N/D 16] The operating point also known as quiescent

More information

Lecture 16: Small Signal Amplifiers

Lecture 16: Small Signal Amplifiers Lecture 16: Small Signal Amplifiers Prof. Niknejad Lecture Outline Review: Small Signal Analysis Two Port Circuits Voltage Amplifiers Current Amplifiers Transconductance Amps Transresistance Amps Example:

More information

Small signal ac equivalent circuit of BJT

Small signal ac equivalent circuit of BJT UNIT-2 Part A 1. What is an ac load line? [N/D 16] A dc load line gives the relationship between the q-point and the transistor characteristics. When capacitors are included in a CE transistor circuit,

More information

ANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS

ANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS AV18-AFC ANALOG FUNDAMENTALS C Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS 1 ANALOG FUNDAMENTALS C AV18-AFC Overview This topic identifies the basic FET amplifier configurations and their principles of

More information

ECE 2C Final Exam. June 8, 2010

ECE 2C Final Exam. June 8, 2010 ECE 2C Final Exam June 8, 2010 Do not open exam until instructed to. Closed book: Crib sheet and 2 pages personal notes permitted There are 4 problems on this exam, and you have 3 hours. Use any and all

More information

ECE 442 Solid State Devices & Circuits. 15. Differential Amplifiers

ECE 442 Solid State Devices & Circuits. 15. Differential Amplifiers ECE 442 Solid State Devices & Circuits 15. Differential Amplifiers Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 442 Jose Schutt Aine 1 Background

More information

I C I E =I B = I C 1 V BE 0.7 V

I C I E =I B = I C 1 V BE 0.7 V Guide to NPN Amplifier Analysis Jason Woytowich 1. Transistor characteristics A BJT has three operating modes cutoff, active, and saturation. For applications, like amplifiers, where linear characteristics

More information

Lecture 18: Common Emitter Amplifier.

Lecture 18: Common Emitter Amplifier. Whites, EE 320 Lecture 18 Page 1 of 8 Lecture 18: Common Emitter Amplifier. We will now begin the analysis of the three basic types of linear BJT small-signal amplifiers: 1. Common emitter (CE) 2. Common

More information

Electronic Circuits II - Revision

Electronic Circuits II - Revision Electronic Circuits II - Revision -1 / 16 - T & F # 1 A bypass capacitor in a CE amplifier decreases the voltage gain. 2 If RC in a CE amplifier is increased, the voltage gain is reduced. 3 4 5 The load

More information

ECE315 / ECE515 Lecture 5 Date:

ECE315 / ECE515 Lecture 5 Date: Lecture 5 ate: 20.08.2015 MOSFET Small Signal Models, and Analysis Common Source Amplifier Introduction MOSFET Small Signal Model To determine the small-signal performance of a given MOSFET amplifier circuit,

More information

EXPERIMENT NO -9 TRANSITOR COMMON -BASE CONFIGURATION CHARACTERISTICS

EXPERIMENT NO -9 TRANSITOR COMMON -BASE CONFIGURATION CHARACTERISTICS Contents EXPERIMENT NO -9 TRANSITOR COMMON -BASE CONFIGURATION CHARACTERISTICS... 3 EXPERIMENT NO -10. FET CHARACTERISTICS... 8 Experiment # 11 Non-inverting amplifier... 13 Experiment #11(B) Inverting

More information

Lab 4. Transistor as an amplifier, part 2

Lab 4. Transistor as an amplifier, part 2 Lab 4 Transistor as an amplifier, part 2 INTRODUCTION We continue the bi-polar transistor experiments begun in the preceding experiment. In the common emitter amplifier experiment, you will learn techniques

More information

Fundamentals of Microelectronics. Bipolar Amplifier

Fundamentals of Microelectronics. Bipolar Amplifier Bipolar Amplifier Voltage Amplifier Performance Metrics - There are many metrics that are used to evaluate how good an amplifier is (1) (Voltage) Gain= Vout/ Vin. Can be found from small-signal 10 8 6

More information

UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A

UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A 1. Why do we choose Q point at the center of the load line? 2. Name the two techniques used in the stability of the q point.explain. 3. Give the expression

More information

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB Experiment # 11 MOSFET Amplifiers testing and designing Equipment:

More information

EE 3111 Lab 7.1. BJT Amplifiers

EE 3111 Lab 7.1. BJT Amplifiers EE 3111 Lab 7.1 BJT Amplifiers BJT Amplifier Device/circuit that alters the amplitude of a signal, while keeping input waveform shape BJT amplifiers run the BJT in active mode. Forward current gain is

More information

BJT Circuits (MCQs of Moderate Complexity)

BJT Circuits (MCQs of Moderate Complexity) BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r

More information

Field Effect Transistors

Field Effect Transistors Field Effect Transistors LECTURE NO. - 41 Field Effect Transistors www.mycsvtunotes.in JFET MOSFET CMOS Field Effect transistors - FETs First, why are we using still another transistor? BJTs had a small

More information

ECE 310L : LAB 9. Fall 2012 (Hay)

ECE 310L : LAB 9. Fall 2012 (Hay) ECE 310L : LAB 9 PRELAB ASSIGNMENT: Read the lab assignment in its entirety. 1. For the circuit shown in Figure 3, compute a value for R1 that will result in a 1N5230B zener diode current of approximately

More information

(a) BJT-OPERATING MODES & CONFIGURATIONS

(a) BJT-OPERATING MODES & CONFIGURATIONS (a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base

More information

.dc Vcc Ib 0 50uA 5uA

.dc Vcc Ib 0 50uA 5uA EE 2274 BJT Biasing PreLab: 1. Common Emitter (CE) Transistor Characteristics curve Generate the characteristics curves for a 2N3904 in LTspice by plotting Ic by sweeping Vce over a set of Ib steps. Label

More information

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering EXPERIMENT 8 MOSFET AMPLIFIER CONFIGURATIONS AND INPUT/OUTPUT IMPEDANCE OBJECTIVES The purpose of this experiment

More information

Electronic Circuits for Mechatronics ELCT 609 Lecture 7: MOS-FET Amplifiers

Electronic Circuits for Mechatronics ELCT 609 Lecture 7: MOS-FET Amplifiers Electronic Circuits for Mechatronics ELCT 609 Lecture 7: MOS-FET Amplifiers Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Enhancement N-MOS Modes of Operation Mode V GS I DS V DS Cutoff

More information

UNIT II MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS

UNIT II MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS UNIT II MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS CE, CB and CC amplifiers. Method of drawing small-signal equivalent circuit. Midband analysis of various types of single stage amplifiers to obtain gain,

More information

EXPERIMENT 10: SINGLE-TRANSISTOR AMPLIFIERS 10/27/17

EXPERIMENT 10: SINGLE-TRANSISTOR AMPLIFIERS 10/27/17 EXPERIMENT 10: SINGLE-TRANSISTOR AMPLIFIERS 10/27/17 In this experiment we will measure the characteristics of the standard common emitter amplifier. We will use the 2N3904 npn transistor. If you have

More information

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved. Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the

More information

LAB 4 : FET AMPLIFIERS

LAB 4 : FET AMPLIFIERS LEARNING OUTCOME: LAB 4 : FET AMPLIFIERS In this lab, students design and implement single-stage FET amplifiers and explore the frequency response of the real amplifiers. Breadboard and the Analog Discovery

More information

EE105 Fall 2015 Microelectronic Devices and Circuits

EE105 Fall 2015 Microelectronic Devices and Circuits EE105 Fall 2015 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 11-1 Transistor Operating Mode in Amplifiers Transistors are biased in flat part of

More information

Early Effect & BJT Biasing

Early Effect & BJT Biasing Early Effect & BJT Biasing Early Effect DC BJT Behavior DC Biasing the BJT 1 ESE319 Introduction to Microelectronics Early Effect Saturation region Forward-Active region 4 3 Ideal NPN BJT Transfer V Characteristic

More information

F7 Transistor Amplifiers

F7 Transistor Amplifiers Lars Ohlsson 2018-09-25 F7 Transistor Amplifiers Outline Transfer characteristics Small signal operation and models Basic configurations Common source (CS) CS/CE w/ source/ emitter degeneration resistance

More information

UNIT 3: FIELD EFFECT TRANSISTORS

UNIT 3: FIELD EFFECT TRANSISTORS FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are

More information

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering EXPERIMENT 7 BJT AMPLIFIER CONFIGURATIONS AND INPUT/OUTPUT IMPEDANCE OBJECTIVES The purpose of this experiment

More information

ECE 546 Lecture 12 Integrated Circuits

ECE 546 Lecture 12 Integrated Circuits ECE 546 Lecture 12 Integrated Circuits Spring 2018 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jesa@illinois.edu ECE 546 Jose Schutt Aine 1 Integrated Circuits IC Requirements

More information

Design and Analysis of Two-Stage Amplifier

Design and Analysis of Two-Stage Amplifier Design and Analysis of Two-Stage Amplifier Introduction This report discusses the design and analysis of a two stage amplifier. An FET based common source amplifier was designed.fet was preferred over

More information

EE 330 Laboratory 8 Discrete Semiconductor Amplifiers

EE 330 Laboratory 8 Discrete Semiconductor Amplifiers EE 330 Laboratory 8 Discrete Semiconductor Amplifiers Fall 2017 Contents Objective:... 2 Discussion:... 2 Components Needed:... 2 Part 1 Voltage Controlled Amplifier... 2 Part 2 Common Source Amplifier...

More information

Reading. Lecture 33: Context. Lecture Outline. Chapter 9, multi-stage amplifiers. Prof. J. S. Smith

Reading. Lecture 33: Context. Lecture Outline. Chapter 9, multi-stage amplifiers. Prof. J. S. Smith eading Lecture 33: Chapter 9, multi-stage amplifiers Prof J. S. Smith Context Lecture Outline We are continuing to review some of the building blocks for multi-stage amplifiers, including current sources

More information

Lab 2: Discrete BJT Op-Amps (Part I)

Lab 2: Discrete BJT Op-Amps (Part I) Lab 2: Discrete BJT Op-Amps (Part I) This is a three-week laboratory. You are required to write only one lab report for all parts of this experiment. 1.0. INTRODUCTION In this lab, we will introduce and

More information

Chapter 4 Single-stage MOS amplifiers

Chapter 4 Single-stage MOS amplifiers Chapter 4 Single-stage MOS amplifiers ELEC-H402/CH4: Single-stage MOS amplifiers 1 Single-stage MOS amplifiers NMOS as an amplifier: example of common-source circuit NMOS amplifier example Introduction

More information

Electron Devices and Circuits

Electron Devices and Circuits Electron Devices and Circuits (EC 8353) Prepared by Mr.R.Suresh, AP/EEE Ms.S.KARKUZHALI,A.P/EEE BJT small signal model Analysis of CE, CB, CC amplifiers- Gain and frequency response MOSFET small signal

More information

Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017

Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017 Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain

More information

CS and CE amplifiers with loads:

CS and CE amplifiers with loads: CS and CE amplifiers with loads: The Common-Source Circuit The most basic IC MOS amplifier is shown in fig.(1). The source of MOS transistor is grounded, also the drain resistor RD replaced by a constant-current

More information

Solid State Devices & Circuits. 18. Advanced Techniques

Solid State Devices & Circuits. 18. Advanced Techniques ECE 442 Solid State Devices & Circuits 18. Advanced Techniques Jose E. Schutt-Aine Electrical l&c Computer Engineering i University of Illinois jschutt@emlab.uiuc.edu 1 Darlington Configuration - Popular

More information

COLLECTOR DRAIN BASE GATE EMITTER. Applying a voltage to the Gate connection allows current to flow between the Drain and Source connections.

COLLECTOR DRAIN BASE GATE EMITTER. Applying a voltage to the Gate connection allows current to flow between the Drain and Source connections. MOSFETS Although the base current in a transistor is usually small (< 0.1 ma), some input devices (e.g. a crystal microphone) may be limited in their output. In order to overcome this, a Field Effect Transistor

More information

Lecture 13. Biasing and Loading Single Stage FET Amplifiers. The Building Blocks of Analog Circuits - III

Lecture 13. Biasing and Loading Single Stage FET Amplifiers. The Building Blocks of Analog Circuits - III Lecture 3 Biasing and Loading Single Stage FET Amplifiers The Building Blocks of Analog Circuits III In this lecture you will learn: Current biasing of circuits Current sources and sinks for CS, CG, and

More information

SMALL SINGLE LOW FREQUENCY TRANSISTOR AMPLIFIERS

SMALL SINGLE LOW FREQUENCY TRANSISTOR AMPLIFIERS UNIT VI SMALL SINGLE LOW FREQUENCY TRANSISTOR 6.1 Introduction AMPLIFIERS V-I characteristics of an active device such as BJT are non-linear. The analysis of a non- linear device is complex. Thus to simplify

More information

Chap. 4 BJT transistors

Chap. 4 BJT transistors Chap. 4 BJT transistors Widely used in amplifier circuits Formed by junction of 3 materials npn or pnp structure ECE 3111 - Electronics - Dr. S. Kozaitis- 1 ECE 3111 - Electronics - Dr. S. Kozaitis- 2

More information

Lab 6: MOSFET AMPLIFIER

Lab 6: MOSFET AMPLIFIER Lab 6: MOSFET AMPLIFIER NOTE: This is a "take home" lab. You are expected to do the lab on your own time (still working with your lab partner) and then submit your lab reports. Lab instructors will be

More information

Analog Integrated Circuit Configurations

Analog Integrated Circuit Configurations Analog Integrated Circuit Configurations Basic stages: differential pairs, current biasing, mirrors, etc. Approximate analysis for initial design MOSFET and Bipolar circuits Basic Current Bias Sources

More information

Frequency Response of Common Emitter Amplifier

Frequency Response of Common Emitter Amplifier Başkent University Department of Electrical and Electronics Engineering EEM 311 Electronics II Experiment 6 Frequency Response of Common Emitter Amplifier Aim: The aim of this experiment is to study the

More information

Lecture 030 ECE4430 Review III (1/9/04) Page 030-1

Lecture 030 ECE4430 Review III (1/9/04) Page 030-1 Lecture 030 ECE4430 Review III (1/9/04) Page 0301 LECTURE 030 ECE 4430 REVIEW III (READING: GHLM Chaps. 3 and 4) Objective The objective of this presentation is: 1.) Identify the prerequisite material

More information

Chapter 8 Differential and Multistage Amplifiers

Chapter 8 Differential and Multistage Amplifiers 1 Chapter 8 Differential and Multistage Amplifiers Operational Amplifier Circuit Components 2 1. Ch 7: Current Mirrors and Biasing 2. Ch 9: Frequency Response 3. Ch 8: Active-Loaded Differential Pair 4.

More information

Experiment #8: Designing and Measuring a Common-Collector Amplifier

Experiment #8: Designing and Measuring a Common-Collector Amplifier SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Experiment #8: Designing and Measuring a Common-Collector Amplifier

More information

Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Microelectronic Circuits Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Slide 1 MOSFET Construction MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Slide 2

More information

ECE315 / ECE515 Lecture 8 Date:

ECE315 / ECE515 Lecture 8 Date: ECE35 / ECE55 Lecture 8 Date: 05.09.06 CS Amplifier with Constant Current Source Current Steering Circuits CS Stage Followed by CG Stage Cascode as Current Source Cascode as Amplifier ECE35 / ECE55 CS

More information

The shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect

The shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect Diode as Clamper A clamping circuit is used to place either the positive or negative peak of a signal at a desired level. The dc component is simply added or subtracted to/from the input signal. The clamper

More information

Current Supply Topology. CMOS Cascode Transconductance Amplifier. Basic topology. p-channel cascode current supply is an obvious solution

Current Supply Topology. CMOS Cascode Transconductance Amplifier. Basic topology. p-channel cascode current supply is an obvious solution CMOS Cascode Transconductance Amplifier Basic topology. Current Supply Topology p-channel cascode current supply is an obvious solution Current supply must have a very high source resistance r oc since

More information

6.002 Circuits and Electronics Final Exam Practice Set 1

6.002 Circuits and Electronics Final Exam Practice Set 1 MASSACHUSETTS INSTITUTE OF TECHNOLOGY DEPARTMENT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE 6.002 Circuits and Electronics Set 1 Problem 1 Figure 1 shows a simplified small-signal model of a certain

More information

UNIT I - TRANSISTOR BIAS STABILITY

UNIT I - TRANSISTOR BIAS STABILITY UNIT I - TRANSISTOR BIAS STABILITY OBJECTIVE On the completion of this unit the student will understand NEED OF BIASING CONCEPTS OF LOAD LINE Q-POINT AND ITS STABILIZATION AND COMPENSATION DIFFERENT TYPES

More information

Lecture 21 - Multistage Amplifiers (I) Multistage Amplifiers. November 22, 2005

Lecture 21 - Multistage Amplifiers (I) Multistage Amplifiers. November 22, 2005 6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 2 Lecture 2 Multistage Amplifiers (I) Multistage Amplifiers November 22, 2005 Contents:. Introduction 2. CMOS multistage voltage amplifier 3.

More information

BJT Amplifier. Superposition principle (linear amplifier)

BJT Amplifier. Superposition principle (linear amplifier) BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited

More information

EE 330 Lecture 20. Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling

EE 330 Lecture 20. Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling EE 330 Lecture 20 Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling Review from Last Lecture Simplified Multi-Region Model Alternate equivalent model

More information

CMOS Cascode Transconductance Amplifier

CMOS Cascode Transconductance Amplifier CMOS Cascode Transconductance Amplifier Basic topology. 5 V I SUP v s V G2 M 2 iout C L v OUT Device Data V Tn = 1 V V Tp = 1 V µ n C ox = 50 µa/v 2 µ p C ox = 25 µa/v 2 λ n = 0.05 V 1 λ p = 0.02 V 1 @

More information

Lecture 7. Possible Bipolar Amplifier Topologies

Lecture 7. Possible Bipolar Amplifier Topologies Lecture 7 OUTLINE Bipolar mplifier Topologies (1) Common-Emitter mplifiers Reading: Chapter 5.3.1 EE105 Spring 2008 Lecture 7, Slide 1 Prof. Wu, UC Berkeley Possible Bipolar mplifier Topologies Three possible

More information

Experiment #6: Biasing an NPN BJT Introduction to CE, CC, and CB Amplifiers

Experiment #6: Biasing an NPN BJT Introduction to CE, CC, and CB Amplifiers SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Experiment #6: Biasing an NPN BJT Introduction to CE, CC, and CB

More information

Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi

Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Module No # 05 FETS and MOSFETS Lecture No # 06 FET/MOSFET Amplifiers and their Analysis In the previous lecture

More information

Multistage Amplifiers

Multistage Amplifiers Multistage Amplifiers Single-stage transistor amplifiers are inadequate for meeting most design requirements for any of the four amplifier types (voltage, current, transconductance, and transresistance.)

More information

INTRODUCTION TO ELECTRONICS EHB 222E

INTRODUCTION TO ELECTRONICS EHB 222E INTRODUCTION TO ELECTRONICS EHB 222E MOS Field Effect Transistors (MOSFETS II) MOSFETS 1/ INTRODUCTION TO ELECTRONICS 1 MOSFETS Amplifiers Cut off when v GS < V t v DS decreases starting point A, once

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-8 Junction Field

More information

SAMPLE FINAL EXAMINATION FALL TERM

SAMPLE FINAL EXAMINATION FALL TERM ENGINEERING SCIENCES 154 ELECTRONIC DEVICES AND CIRCUITS SAMPLE FINAL EXAMINATION FALL TERM 2001-2002 NAME Some Possible Solutions a. Please answer all of the questions in the spaces provided. If you need

More information

Lab 3: BJT Digital Switch

Lab 3: BJT Digital Switch Lab 3: BJT Digital Switch Objectives The purpose of this lab is to acquaint you with the basic operation of bipolar junction transistor (BJT) and to demonstrate its functionality in digital switching circuits.

More information

V A ( ) 2 = A. For Vbe = 0.4V: Ic = 7.34 * 10-8 A. For Vbe = 0.5V: Ic = 3.49 * 10-6 A. For Vbe = 0.6V: Ic = 1.

V A ( ) 2 = A. For Vbe = 0.4V: Ic = 7.34 * 10-8 A. For Vbe = 0.5V: Ic = 3.49 * 10-6 A. For Vbe = 0.6V: Ic = 1. 1. A BJT has the structure and parameters below. a. Base Width = 0.5mu b. Electron lifetime in base is 1x10-7 sec c. Base doping is NA=10 17 /cm 3 d. Emitter Doping is ND=2 x10 19 /cm 3. Collector Doping

More information

EE 330 Laboratory 8 Discrete Semiconductor Amplifiers

EE 330 Laboratory 8 Discrete Semiconductor Amplifiers EE 330 Laboratory 8 Discrete Semiconductor Amplifiers Fall 2018 Contents Objective:...2 Discussion:...2 Components Needed:...2 Part 1 Voltage Controlled Amplifier...2 Part 2 A Nonlinear Application...3

More information

Course Number Section. Electronics I ELEC 311 BB Examination Date Time # of pages. Final August 12, 2005 Three hours 3 Instructor

Course Number Section. Electronics I ELEC 311 BB Examination Date Time # of pages. Final August 12, 2005 Three hours 3 Instructor Course Number Section Electronics ELEC 311 BB Examination Date Time # of pages Final August 12, 2005 Three hours 3 nstructor Dr. R. Raut M aterials allowed: No Yes X (Please specify) Calculators allowed:

More information

Shankersinh Vaghela Bapu Institute of Technology INDEX

Shankersinh Vaghela Bapu Institute of Technology INDEX Shankersinh Vaghela Bapu Institute of Technology Diploma EE Semester III 3330905: ELECTRONIC COMPONENTS AND CIRCUITS INDEX Sr. No. Title Page Date Sign Grade 1 Obtain I-V characteristic of Diode. 2 To

More information

ECE315 / ECE515 Lecture 7 Date:

ECE315 / ECE515 Lecture 7 Date: Lecture 7 ate: 01.09.2016 CG Amplifier Examples Biasing in MOS Amplifier Circuits Common Gate (CG) Amplifier CG Amplifier- nput is applied at the Source and the output is sensed at the rain. The Gate terminal

More information

Facility of Engineering. Biomedical Engineering Department. Medical Electronic Lab BME (317) Pre-Report Forms

Facility of Engineering. Biomedical Engineering Department. Medical Electronic Lab BME (317) Pre-Report Forms Facility of Engineering Biomedical Engineering Department Medical Electronic Lab BME (317) Pre-Report Forms Prepared by Eng.Hala Amari Spring 2014 Facility of Engineering Biomedical Engineering Department

More information

Phy 335, Unit 4 Transistors and transistor circuits (part one)

Phy 335, Unit 4 Transistors and transistor circuits (part one) Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit

More information

The Miller Approximation. CE Frequency Response. The exact analysis is worked out on pp of H&S.

The Miller Approximation. CE Frequency Response. The exact analysis is worked out on pp of H&S. CE Frequency Response The exact analysis is worked out on pp. 639-64 of H&S. The Miller Approximation Therefore, we consider the effect of C µ on the input node only V ---------- out V s = r g π m ------------------

More information

Experiment (1) Principles of Switching

Experiment (1) Principles of Switching Experiment (1) Principles of Switching Introduction When you use microcontrollers, sometimes you need to control devices that requires more electrical current than a microcontroller can supply; for this,

More information

Linear electronic. Lecture No. 1

Linear electronic. Lecture No. 1 1 Lecture No. 1 2 3 4 5 Lecture No. 2 6 7 8 9 10 11 Lecture No. 3 12 13 14 Lecture No. 4 Example: find Frequency response analysis for the circuit shown in figure below. Where R S =4kR B1 =8kR B2 =4k R

More information

Pg: 1 VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203 Department of Electronics & Communication Engineering Regulation: 2013 Acadamic Year : 2015 2016 EC6304 Electronic Circuits I Question

More information

DC Coupling: General Trends

DC Coupling: General Trends DC Coupling: General Trends * Goal: want both input and output to be centered at halfway between the positive and negative supplies (or ground, for a single supply) -- in order to have maximum possible

More information

Experiment 5 Single-Stage MOS Amplifiers

Experiment 5 Single-Stage MOS Amplifiers Experiment 5 Single-Stage MOS Amplifiers B. Cagdaser, H. Chong, R. Lu, and R. T. Howe UC Berkeley EE 105 Fall 2005 1 Objective This is the first lab dealing with the use of transistors in amplifiers. We

More information

Chapter 8. Field Effect Transistor

Chapter 8. Field Effect Transistor Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There

More information

Lecture 33: Context. Prof. J. S. Smith

Lecture 33: Context. Prof. J. S. Smith Lecture 33: Prof J. S. Smith Context We are continuing to review some of the building blocks for multi-stage amplifiers, including current sources and cascode connected devices, and we will also look at

More information

UNIVERSITY OF PENNSYLVANIA EE 206

UNIVERSITY OF PENNSYLVANIA EE 206 UNIVERSITY OF PENNSYLVANIA EE 206 TRANSISTOR BIASING CIRCUITS Introduction: One of the most critical considerations in the design of transistor amplifier stages is the ability of the circuit to maintain

More information

ECE315 / ECE515 Lecture 9 Date:

ECE315 / ECE515 Lecture 9 Date: Lecture 9 Date: 03.09.2015 Biasing in MOS Amplifier Circuits Biasing using Single Power Supply The general form of a single-supply MOSFET amplifier biasing circuit is: We typically attempt to satisfy three

More information