Shankersinh Vaghela Bapu Institute of Technology INDEX

Size: px
Start display at page:

Download "Shankersinh Vaghela Bapu Institute of Technology INDEX"

Transcription

1 Shankersinh Vaghela Bapu Institute of Technology Diploma EE Semester III : ELECTRONIC COMPONENTS AND CIRCUITS INDEX Sr. No. Title Page Date Sign Grade 1 Obtain I-V characteristic of Diode. 2 To measure ripple factor at the output of a. Half wave rectifier with and without filter capacitor. b. Full Wave rectifier with and without filter capacitor. c. Bridge rectifier with and without filter capacitor. 3 To verify performance of various Clipper circuits. 4 To verify performance of various Clamper circuits. 5 Obtain I-V characteristic of Zener Diode. 6 7 To obtain input and output characteristics and calculate gain of CE amplifier circuit. To obtain input and output characteristics and calculate gain of CB amplifier circuit. 8 To obtain characteristic of transistor as a switch circuit. 9 To obtain the transfer characteristics of FET. 10 To obtain frequency response of single stage transistor amplifier.

2

3 PRACTICAL - 1 AIM: Obtain I-V characteristic of a Diode. EQUIPMENTS: [1]. Experiment board [2]. Ammeter - 2 (0-30 ma) and (0-100 A) [3]. Voltmeter - 2 (0-1 V) and (0-10 V) [4]. Power supply - 1 (0-10 V) THEORY: A p-n junction diode is formed by joining a p-type and n-type semiconductor material. It is a two terminal, uni-junction, uni-directional device. If the positive terminal of the supply is connected to anode (p-region) and negative terminal is connected to cathode (n-region), the diode is said to be forward biased. If the connections are reversed, the diode is said to be reverse biased. Unbiased diode: When the diode is unbiased, diffusion of carriers take place because the concentration of hole is more in p-region and less in n-region and concentration of electron is more in n-region and less in p-region. Hence, holes from p-region diffuse to n-region and electrons from n-region diffuse to p-region. As soon As these charge carriers cross the junction, they recombine with opposite polarity charges. These recombined carriers neutral in charge and they oppose the further movement of charge carriers from one region to another. The region near the junction, occupied by the recombined charges, is known as depletion region or space charge region or transition region. The difference of potential across this region i.e. barrier potential is 0.6 V to 0.7 V for Silicon diode and 0.2 V to 0.3 V for Germanium diode. Forward biased diode: When the diode is forward biased and the applied bias is less than barrier potential, no current flows. As the applied potential increases, the charge carriers gain sufficient energy to cross barrier potential and enter the other region. The holes enter the n- region and the electrons enter the p-region, crossing the p-n junction. This crossing of charge carriers results in a flow of current. This is called drift current. Reverse biased diode: When the diode is reverse biased the majority charge carriers are attracted towards the terminals of applied potential away from the p-n junction. It results in widening of the depletion region. Under this situation, no current flows across the p-n junction. But, there will be a very small current across the p-n junction due to the thermally generated minority carriers, called reverse saturation current. It is independent of applied potential and increases with temperature. When the applied reverse voltage increased beyond limit, it results in break down. During break down, the diode current increases tremendously for a particular voltage. When a p-n junction diode is heavily doped, it is known as Zener diode. When the Zener diode is forward bias, it exhibits the same characteristics as p-n junction diode. In reverse biased condition, when reverse voltage increases beyond breakdown voltage, current through diode rises sharply. Beyond breakdown very small rise in voltage results in large current through the diode. Due to applied reverse potential, an electric field exists near the junction. This field exerts a strong force on the bound charges, which breaks the covalent bonds and

4 releases free charge carrier. These newly generated electron-hole pairs result in sudden increase of reverse current. As the level of doping increases, the breakdown voltage reduces. Such diode exhibits negative coefficient of temperature. Zener diode, connected in reverse biased condition, is used as a voltage regulator. Once the reverse voltage crosses breakdown voltage, voltage across the zener diode remains constant even if current through the diode increases sharply. PROCEDURE: [1] Connect the circuit as per the circuit diagram (1). [2] Increase the power supply voltage such that the voltage across the diode changes by 0.1V till the power supply meter shows 20V. [3] Note down the corresponding ammeter readings. [4] Plot the graph: I against V. [5] Find the dynamic resistance from the slope of the graph: r = V / I at I = 10mA. [6] Connect the circuit as per the circuit diagram (2). [7] Increase the power supply voltage such that the voltage across the diode changes by 1V till the power supply meter shows 20V. [8] Note down the corresponding ammeter readings. [9] Plot the graph: I against V. [10]Find the dynamic resistance from the slope of the graph: r = V / I at V = 10V. [11]Repeat steps 1 to 10 for Zener diode. OBSERVATION TABLE: JUNCTION DIODE Forward bias Sr.No. Diode voltage, V Diode Current, I Reverse bias Sr.No. Diode voltage, V Diode Current, I RESULTS: Dynamic resistance R= V/ I Forward bias Reverse bias Junction Diode

5 CIRCUIT DIAGRAM: 1K ma A V 0-1 V + V OR FIGURE :1 10K 0-100uA + A V 0-10 V + V OR FIGURE :2 CONCLUSION:

6 PRACTICAL - 2 AIM: [1] To measure ripple factor at the output of a (i). Half wave rectifier with & without filter capacitor (ii). Full wave center taped rectifier with & without filter capacitor (iii).bridge rectifier with & without filter capacitor EQUIPMENTS: [1]. Experiment board [2]. C.R.O. [3]. Multimeter THEORY: The process of converting an alternating voltage/current to a unidirectional voltage/current is called rectification. A diode offers very low resistance when forward biased and very high resistance when reverse biased. Hence, it can be used as rectifier. The rectified output is a pulsating unidirectional voltage/current. A filter is necessary after rectifier to convert pulsating waveform to dc. Half wave rectifier: During positive half cycle, the diode is forward biased. Hence, current flows through load resistor. During negative half cycle, the diode is reverse biased and is equivalent to open circuit. Therefore current through load is zero. Thus, the diode conducts only for one half cycles and results in half wave rectified output. Half wave rectifier is simple and low cost circuit but it has very high ripple, lower efficiency. Full wave rectifier: The full wave rectifier consists of a center-tap transformer, which results in equal voltages above and below the center-tap. During the positive half cycle, positive voltage appears at the anode of D1 while negative voltage at the anode of D2. So diode D1 is forward biased and it results in current through load. During negative half cycle, the positive voltage appears at the anode of D2 and hence it is forward biased resulting in current through load. At the same instant a negative voltage appears at the anode of D1, thus reverse biasing it and hence D1 does not conduct. The current through the load during both half cycles is in the same direction hence it is sum of individual currents. The individual currents and voltages are combined in the load and therefore their average values are double that obtained in a half wave rectifier. In full wave rectifier, ripple is reduced, efficiency is improved. And as equal current flows through secondary during both the half cycle, core does not saturate. The demerits of full wave rectifier are : output voltage is half the secondary voltage and diodes with high PIV ratings are required. Bridge rectifier: This circuit does not required center-tap transformer. During the positive half cycle, diodes D1 and D2 are forward biased and D3 and D4 are reverse biased. Thus, current flows in the circuit due to D1 and D2. During the positive half cycle, diodes D1 and D2 are forward biased and D3 and D4 are reverse biased. Thus, current flows in the circuit due to D1 and D2. During the negative half cycle, diodes D3 and D4 are forward biased and D1 and D2 are reverse biased which results in a current in the same direction. Thus the current flows for the whole cycle across the load in one direction resulting in full wave rectification. Since bridge rectifier does not required center-tapped transformer, its cost, weight and size are lesser compared to a full wave rectifier. Diode with lesser PIV can be used in bridge rectifier compared to full wave rectifier.

7 FORMULA: For half wave rectifier Vdc = Vm / Vrms = Vm / 2 Vrms' = (Vrms 2 - Vdc 2 ) (without filter) Vrms' = Vm' / 2 (with filter) For full wave rectifier (center tapped & bridge ) Vdc = 2Vm / Vrms = Vm / 2 Vrms' = (Vrms 2 - Vdc 2 ) (without filter) Vrms' = Vm' / 2 (with filter) where, Vm - peak value of the pulsating waveform Vrms - root mean square value of the total output Vrms' - root mean square value of ripple Vm' - peak value of the ripple PROCEDURE: [1] Complete the circuit as per the fig.(1) for half wave rectifier. [2] Connect the CRO across the load. [3] Switch on the supply. [4] Keep the CRO in ground mode and adjust the horizontal line on X-axis. [5] Switch the CRO to DC mode and draw the waveform. Note down its amplitude Vm. [6] Calculate Vdc, Vrms and Vrms' from the formula given in above table. [7] From Vrms' and Vdc, find out ripple factor. [8] Now, connect the capacitor filter at the output of rectifier, draw the resulting waveform and measure the peak value, Vp. [9] By keeping the CRO in AC mode, observe the ripple output and measure the peak value Vm'. [10]Calculate Vdc = Vp- Vm'. [11]Calculate Vrms' from the formula given in above table and from Vrms' and Vdc, Calculate the ripple factor. [12]Complete the circuit as shown in fig.(2) for full wave centre tapped rectifier and repeat the steps 5 to 11. [13]Complete the circuit as shown in fig.(3) for bridge rectifier and repeat the steps 5 to 11. OBSERVATION TABLE: WITHOUT FILTER : Rectifier Type Half wave rectifier Full wave (CT) Bridge rectifier Vm measured (Volts) (dc mode) Vdc Calculated Volts Vrms calculated (Volts) Vrms' calculated (Volts) Ripple factor = Vrms'/Vdc

8 WITH FILTER : Rectifier Type Half wave rectifier Full wave (CT) Bridge rectifier Vp measured (Volts) (dc mode) V'm Measured (Volts) (ac mode) Vdc calculated (Volts) V'rms calculated (Volts) Ripple factor = V'rms/Vdc RESULT: Half wave rectifier Full wave rectifier Bridge rectifier C=0.1uF Ripple factor with out filter Ripple factor with filter Theoretical Practical Theoretical Practical =1/(23fCR L) =1/(43fCRL) =1/(43fCRL) & RL = 10K CONCLUSION:

9 CIRCUIT DIAGRAM: HALF WAVE RECTIFIER: Fig. (1) 230 V ac, 50Hz 0V o/p without filter O/p with Filter FULL WAVE RECTIFIER: Fig. (2) 230 V ac, 50Hz 0V O/p without Filter O/p with Filter BRIDGE RECTIFIER: Fig. (3) 230 V ac, 50Hz o/p without Filter o/p with Filter

10 PRACTICAL - 3 AIM: To verify performance of various Clipper circuits EQUIPMENTS: [1] Circuit board [2] Regulated power supply [3] Audio signal generator [4] C.R.O. THEORY: The circuit used to limit or clip the extremities of the ac signal is called the limiter or clipper. Limiters can transform a sine wave into a rectangular wave. It can limit either the positive or negative amplitude of an ac voltage. It can also perform other useful wave shaping functions. The unidirectional characteristics of semiconductor diodes permit to serve as limiter. In Figure 1, a sine wave signal of amplitude V in is applied to the input. During the positive half cycle of the input signal, diode D is reversed biased and cannot conduct. Hence the output obtained at the output terminals is zero. During the negative half cycle of the input signal, diode D is forward biased and current can flow in the circuit. Hence at the output terminal, the output voltage V o will be developed which will be having full negative half cycles and clipped positive half cycles. This circuit is known as positive series clipper because the diode is in series with the output terminal and the output is clipped on the positive side. By reversing the polarity of diode negative series clipper can be realized which can give the output voltage V o with full positive half cycles and clipped negative half cycles. In Figure 2, a sine wave signal of amplitude V in is applied to the input. During the positive half cycle of the input signal, diode D is reversed biased and cannot conduct. The diode will offer very high resistance R r to the current. The resistors R and R r will form the voltage divider circuit and most of the input voltage will be available at the output terminal because the resistor R r is very large as compared to R. During the negative half cycle of the input signal, diode D is forward biased and current can flow in the circuit. Hence at the output terminal, the output voltage V o will be almost zero. Thus at the output terminal, the output voltage V o will be developed which will be having full positive half cycles and clipped negative half cycles. This circuit is known as negative parallel clipper because the diode is connected in parallel with the output terminal. By reversing the polarity of diode positive parallel clipper can be realized which can give the output voltage V o with full negative half cycles and clipped positive half cycles. The circuit of Figure 3 will provide partial limiting of the negative half cycle of the input signal and is known as biased parallel clipper, while the circuit of Figure 4 will provide partial limiting of both positive and negative half cycles of the input signal and is known as double biased parallel clipper. PROCEDURE: POSITIVE AND NEGATIVE CLIPPER [1] Connect the circuit of Figure and apply a sine wave voltage of 100 Hz (V in max.9v) at the input terminal using audio signal generator. [2] Observe the output voltage Vo and draw the waveforms. [3] Repeat steps (1) & (2) for figure 2.

11 BIAS CLIPPER [1] Connect the circuit as shown in figure. [2] Apply a sine wave of 100 Hz and maximum 10V input keeping Vr = 0 to 3V dc. [3] Observe the output by changing Vr in step of 1 V. [4] Draw the output waveform of each. DOUBLE BIAS CLIPPER (1) Connect the circuit as shown in figure. (2) Apply a sine wave of 100 Hz and maximum 10V input keeping V r1 = 1V & V r2 = 3Vdc. (3) Change input from -5V to 5V dc in steps of 1V and measure the output voltage. (4) Tabulate the same. (5) Plot output voltage Vo against input voltage Vin.. OBSERVATION: Sr. No. V in (Volt) V o (Volt) CONCLUSION:

12 CIRCUIT DIAGRAM:-

13 PRACTICAL 4 AIM: To verify performance of various Clamper circuits. EQUIPMENTS: [1] Circuit board having diode, resistor and capacitor [2] Audio signal generator [3] C.R.O THEORY: The circuit that does not change the shape of the input waveform but only adds a D.C. level to the input waveform is known as clamper, d.c. Restorer or dc inserter. In the circuit of Figure 1, during the negative half cycle of the input sine wave signal of 10 V (peak-to-peak), the diode D will conduct and the capacitor C will charge to the 5Vpeak value of the negative half cycle through the low resistance path of the forward biased diode. During the positive half cycle of the input sine wave signal, the diode D can not conduct and the capacitor C will try to discharge through R. If the discharge time constant RC is large as compared to the time period of the input sine wave, the capacitor will lose very little of its charge and will hold the charged value of 5 V across it. Now during the next negative half cycle of the input sine wave signal, the negative input voltage will be cancelled by the positive voltage across the capacitor and diode cannot conduct. Hence, effectively 5 V is added by this positive clamper to the input sine wave. The output wave will have d.c. Level of 5 V and it will vary from 0 V to 10 V. Negative clamper works on the similar principle as that of the positive clamper and can add a negative D.C. Level to the input wave. In the circuit shown in Figure 2, the polarity of the diode D has been reversed. The capacitor C will charge during the positive half cycle of the input sine wave signal and will hold the peak value of the half cycle across it. The circuit effectively will add - 5 V to the input sine wave and the output will vary from 0 V to - 10 V with d.c. Value equal to - 5 V. In the circuit of Figure 3, a 3V battery is connected in series to reverse bias the diode. The diode will conduct only after 3 V of the input during the positive half cycle. Thus the capacitor will charge only to 2 V (5-3V). The circuit will effectively add - 2 V to the input and the output will vary from - 7 V to 3 V with D.C. Value equal to - 2 V. This circuit is known as biased clamper. PROCEDURE: [1] Connect the circuit of Fig. 1 and apply sinusoidal input signal of 10 Vpp value to the circuit. [2] Observe the output signal on C.R.O. keeping it on D.C. Position. [3] Repeat the step (1) for the circuit of Fig. 2. [4] Now connect the circuit of Fig. 3 and keep the biasing battery at 3 V. [5] Apply sinusoidal input signal of 10 Vpp value to the circuit of Fig. 3 and observe the output on C.R.O. [6] Draw observed waveforms & actual dc level on graph paper. [7] Write down conclusion based on your observation.

14 CIRCUIT DIAGRAM: CONCLUSION:

15 EXPERIMENT - 5 AIM: Obtain I-V characteristic of the Zener Diode. EQUIPMENTS: 1. Bread board 2. Diode, Resistor and Capacitor 3. DC power supply 4. Function generator 5. C.R.O THEORY: The Zener diode is designed to operate in reverse breakdown region. Zener diode is used for voltage regulation purpose. Zener diodes are designed for specific reverse breakdown voltage called Zener breakdown voltage (VZ). The value of VZ depends on amount of doping. Breakdown current is limited by power dissipation capacity of the Zener diode. If power capacity of the Zener is 1 W and Zener voltage is 10V, highest reverse current is 0.1A or 100 ma. If current increases more than this limit, diode will be damaged. Forward characteristics of the Zener diode is similar to normal PN junction diode. CIRCUIT DIAGRAM: Reverse Bias Forward Bias

16 PROCEDURE: 1. Connect the power supply, voltmeter, current meter with the diode as shown in the figure for reverse bias. You can use two multimeter (one to measure current through diode and other to measure voltage across diode) 2. Increase voltage from the power supply from 0V to 20V in step as shown in the table. 3. Measure voltage across diode and current through diode. Note down readings. 4. Reverse the direction of diode in the circuit and repeat the procedure. 5. Draw observed waveforms & actual dc level on graph paper. CONCLUSION:

17 PRACTICAL 6 AIM: To obtain input and output characteristics and calculate gain of CE amplifier circuit. EQUIPMENTS: [1]. Ammeter - 2 (0-10 ma) and (0-200 ua) [2]. Voltmeter - 2 (0-10 V) and (0-2 V) [3]. Power supply - 2 (0-10 V) THEORY: Bipolar junction transistor is a three terminal two junction semiconductor device. In transistor, the conduction is due to both polarity charge carriers. Hence it is called bipolar device. BJT can be either pnp or npn. An npn transistor consists of one p-layer sandwiched between two n-layers. Similarly, a pnp transistor consists of one n-layer sandwiched between two p-layers. Three terminals of transistor are known as Emitter, Base and Collector among which emitter is heavily doped and base is lightly doped. Depending on which terminal is made common to input and output, the transistor is classified into three configurations: Common base, common emitter, Common collector. Common emitter configuration: In Common Emitter configuration, the emitter is common to both input and output. The input characteristics relate base current IB and base to emitter voltage VBE for constant VCE. When VBE is less than cut-in voltage, IB remains almost zero and after cut-in voltage, IB increases with VBE just like in forward biased diode. If VCE is increased, IB decreases for a given value of VBE. The output characteristics relates collector current IC and collector to emitter voltage VCE for constant IB. For given value of IB, IC increases with VCE and then it becomes almost constant. The factor = IC / IB is known as current gain. PROCEDURE: Input Characteristics: [1] Connect the circuit as per the circuit diagram (1). [2] Set VCE = 2V(say), vary VBE insteps of 0.1 V and note down corresponding IB. [3] Repeat the above procedure for VCE = 5V, 10V. [4] Plot the graph : VBE against IB for constant VCE. Output Characteristics: [1] Connect the circuit as per the circuit diagram (2). [2] Set IB = 40 A(say), vary VCE insteps of 1 V and note down corresponding IC. [3] Repeat the above procedure for IB = 80 A, 120 A. [4] Plot the graph : VCE against IC for constant IB.

18 OBSERVATION TABLE: [A] INPUT CHARACTERISTICS: Sr. No. VCE = 2 V VCE = 5 V VCE = 10 V VBE (Volts) IB (A) VBE (Volts) IB (A) VBE (Volts) IB (A) [B] OUTPUT CHARACTERISTICS: Sr. No. IB = 40 A IB = 80 A IB = 120 A VCE (Volts) IC (ma) VCE (Volts) IC (ma) VCE (Volts) IC (ma)

19 CIRCUIT DIAGRAM: 0-10mA A K ma A BC V V + V 0-1 V V 0-10 V CONCLUSION:

20 EXPERIMENT - 7 AIM: To obtain input and output characteristics and calculate gain of CB amplifier circuit. EQUIPMENTS: 1. Bread board 2. Diode, Resistor and Capacitor 3. DC power supply 4. Function generator 5. C.R.O THEORY: In a common base configuration, base terminal is common between input and output. The output is taken from collector and the input voltage is applied between emitter and base. The base is grounded because it is common. To obtain output characteristics, we will measure collector current for different value of collector to base voltage (VCB). Input current is emitter current Ie and input voltage is Veb. To plot input characteristics we will plot Veb versus Ie. Current gain for CB configuration is less than unity. CB configuration is used in common base amplifier to obtain voltage gain. Output impedance of common base configuration is very high. CB amplifier is used in multi - stage amplifier where impedance matching is required between different stages. CIRCUIT DIAGEAM: Input Characteristic: Output Characteristic:

21 PROCEDURE: For input characteristics: Connect circuit as shown in the circuit diagram for input characteristics. Connect variable power supply 0-30V (VEE) at emitter base circuit and another power supply 0-30V at collector base circuit (Vcc). Keep Vcc fix at 0V (Or do not connect Vcc). Increase VEE from 0V to 20V, note down readings of emitter current Ie and emitter to base voltage Veb in the observation table. Repeat above procedure for Vcc = +5V and Vcc = +10V. Draw input characteristics curve. Plot Veb on X axis and Ie on Y axis. For output characteristics: Connect circuit as shown in the circuit diagram for output characteristics Connect variable power supply 0-30V at emitter circuit and collector circuit. Keep emitter current fix (Initially 0) Increase VCC from 0V to 30V, note down readings of collector current Ic and collector to base voltage Vcb in the observation table. Repeat above procedure for base currents Ie = 1mA, 5 ma and 10mA. Increase emitter current by increasing VEE. Draw output characteristics curve. Plot Vcb on X axis and Ic on Y axis. OBSERVATION TABLE: Input Characteristics:

22 Output Characteristics: CONCLUSION:

23 EXPERIMENT - 8 AIM: To obtain characteristic of transistor as a switch circuit. THEORY: Transistor can be operated in three region: cut-off region, active region and saturation region. While using transistor in amplifier circuit, we are using active region. If transistor operated in cut-off and saturation region in amplifier, clipping of waveforms will occur. When we use transistor as a switch, only two regions cut-off and saturation are used. In saturation region transistor acts as ON switch. In cut-off region, transistor acts as OFF switch. We are using only two points of DC load line while using transistor as a switch. CIRCUIT DIAGRAM: PROCEDURE: Connect circuit as shown in the circuit diagram for input characteristics Adjust collector supply Vcc = +12V and base supply VBB=+5V You may use base voltage supply switch instead of switch shown in the circuit diagram. Measure base current when switch is OFF (It will be zero). Measure collector current and voltage between collector and emitter. LED is off because transistor is in cut-off region, Apply base voltage +5V, LED will be ON. Measure collector current and collectoremitter voltage. Transistor is in saturation region. OBSERVATION: [1] Switch off (VBB=0): Ib = VCE = Ic = [2] Switch ON (VBB=+5V): Ib = VCE = Ic = CONCLUSION:

24 EXPERIMENT - 9 AIM: To obtain the transfer characteristics of FET. THEORY: The Field Effect Transistor (FET) is a three terminal device. Three terminals are Drain (D), Source (S) and Gate (G). In FET, current flow is due to only one type of charge particles, either electrons or holes. So FET is known as unipolar device. The name field effect is derived from the fact that the current is controlled by an electric field set up in the device by an externally applied voltage. Thus FET is a voltage controlled device while bipolar transistor is current controlled device. The Field Effect Transistor (FET) can be broadly classified into following categories: In this experiment we will obtain output characteristics of N-channel FET using CS (Common source) Configuration. It is also known as drain characteristics. Basic construction of N-channel FET and its symbol are shown in the following figure. When gate to source voltage VGS is zero, N type channel is open so drain current will flow through it. As we increase negative voltage on the gate terminal, VGS=-1V, -2V, -3V etc., drain current reduces. The reduction in drain current is due to reduction in width of channel. As we increase negative gate voltage, width of depletion region spreads in the channel. Depletion region (generated field due to reverse bias) does not have charge carriers so width of channel will reduce. As we increase negative value of VGS, penetration of depletion region (field) will be more and more due to which channel becomes narrower. At one point drain current reduces to zero when entire channel will be closed due to penetration of depletion region. The value of VGS at which drain current reduces to zero is called cut-off voltage VGS (off). Normally Drain current reduces to zero at VGS=-Vp. Thus VGS (off) = -VP where VP is pinch-off voltage. Pinch-off voltage VP is the value of voltage VDS at which drain current becomes constant.

25 CIRCUIT DIAGRAM: PROCEDURE: Connect circuit as shown in the circuit diagram for output (drain) characteristics. Connect variable power supply 0-10V at gate circuit and 0-12V at drain circuit. Keep gate to source voltage zero (VGS=0). Increase drain supply Vdd from 0V to 12V, note down readings of drain current Id and drain to source voltage Vds in the observation table.

26 Repeat above procedure for different gate to source voltages VGS = -1, -2, -3, -4 etc. Note down reading of Gate to source voltage at which drain current remains zero. This is cutoff voltage VGS(off). Note down pinch-off voltage for all values of VGS. Draw output characteristics curve. Plot Vds on X axis and Id on Y axis. OBSERVATION TABLE: CONCLUSION:

27 EXPERIMENT - 10 AIM: To obtain frequency response of single stage transistor amplifier. THEORY: The circuit consists of voltage divider bias with bypass capacitor Ce and two coupling capacitors C1 and C2, one at the base of the transistor and another at the collector of the transistor. The input resistance Rs is connected to the transistor base via coupling capacitor C1. Capacitor C2 couples external load resistor Rl to the transistor collector. Coupling capacitors are connected to maintain the stability of bias condition. Coupling capacitors acts as open circuit to dc thus maintaining stable biasing condition even after connection of Rs and Rl. The advantage of connecting C1 is that any dc component in the signal is blocked and only ac signal is routed to the transistor amplifier. The emitter resistance Re is one of the component which provides bias stabilization. But it also reduces the voltage swing at the output. The emitter bypass capacitor Ce provides a low reactance path to the amplified ac signal increasing the output voltage swing. During positive half cycle of input signal as the input voltage increases, it increases forward bias on basetimes the base current, the collector current will also increase. This increases voltage drop across Rc which in turn decrease collector voltage Vc (Vc=Vcc-IcRc). Thus, as Vi increase in a positive direction, Vo goes in a negative direction and it results in negative half cycle of output voltage for positive half cycle of input voltage. Therefore, there is a phase shift of 1800 between input and output voltage. CE amplifier provides moderate voltage and current gain. It has low input impedance and high output impedance. CIRCUIT DIAGRAM:

28 PROCEDURE: Connect the circuit as per the circuit diagram. Set the function generator to give 100mVp-p sine wave to the amplifier. Observe the output on CRO. Keeping the input voltage constant, vary the frequency from 100 Hz to 100 KHz and note down the corresponding output. Plot the graph: gain (db) v/s frequency. For finding input impedance, connect decade resistance box (DRB) in series with the input. Keep zero resistance in DRB. Connect CRO at the input. Set the input to give 2 Vp-p outputs. Change the resistance of DRB in order to get half i.e. 1V output. The resistance of DRB will be the input impedance. For finding output impedance, connect decade resistance box (DRB) in parallel with the output. Keep maximum resistance in DRB. Set the input to give 2 Vp-p output. Change the resistance of DRB in order to get half i.e. 1V output. The resistance of DRB will be the output impedance. After plotting the graph, mark the points which are 3dB lower than midband gain. Make the projection of these points on frequency axis. The difference of two points indicates bandwidth of the amplifier. OBSERVATION TABLE: Input Voltage: V1 = Sr. No Frequency at the input Output Voltage (Vo) Output Voltage (V3) Gain A = Vo/Vi Gain(dB) = 20 log (Vo/Vi) CONCLUSION:

Shankersinh Vaghela Bapu Institute of Technology

Shankersinh Vaghela Bapu Institute of Technology Shankersinh Vaghela Bapu Institute of Technology B.E. Semester III (EC) 131101: Basic Electronics INDEX Sr. No. Title Page Date Sign Grade 1 [A] To Study the V-I characteristic of PN junction diode. [B]

More information

ELECTRONIC DEVICES AND CIRCUITS LABORATORY MANUAL FOR II / IV B.E (EEE): I - SEMESTER

ELECTRONIC DEVICES AND CIRCUITS LABORATORY MANUAL FOR II / IV B.E (EEE): I - SEMESTER ELECTRONIC DEVICES AND CIRCUITS LABORATORY MANUAL FOR II / IV B.E (EEE): I - SEMESTER DEPT. OF ELECTRICAL AND ELECTRONICS ENGINEERING SIR C.R.REDDY COLLEGE OF ENGINEERING ELURU 534 007 ELECTRONIC DEVICES

More information

CHADALAWADA RAMANAMMA ENGINEERING COLLEGE (AUTONOMOUS) Chadalawada Nagar, Renigunta Road, Tirupati

CHADALAWADA RAMANAMMA ENGINEERING COLLEGE (AUTONOMOUS) Chadalawada Nagar, Renigunta Road, Tirupati ELECTRONIC DEVICES AND CIRCUITS LABORATORY MANUAL Subject Code : 17CA04305 Regulations : R17 Class : III Semester (ECE) CHADALAWADA RAMANAMMA ENGINEERING COLLEGE (AUTONOMOUS) Chadalawada Nagar, Renigunta

More information

Objective: To study and verify the functionality of a) PN junction diode in forward bias. Sl.No. Name Quantity Name Quantity 1 Diode

Objective: To study and verify the functionality of a) PN junction diode in forward bias. Sl.No. Name Quantity Name Quantity 1 Diode Experiment No: 1 Diode Characteristics Objective: To study and verify the functionality of a) PN junction diode in forward bias Components/ Equipments Required: b) Point-Contact diode in reverse bias Components

More information

Dev Bhoomi Institute Of Technology Department of Electronics and Communication Engineering PRACTICAL INSTRUCTION SHEET

Dev Bhoomi Institute Of Technology Department of Electronics and Communication Engineering PRACTICAL INSTRUCTION SHEET Dev Bhoomi Institute Of Technology Department of Electronics and Communication Engineering PRACTICAL INSTRUCTION SHEET LABORATORY MANUAL EXPERIMENT NO. ISSUE NO. : ISSUE DATE: REV. NO. : REV. DATE : PAGE:

More information

Government Polytechnic Muzaffarpur Name of the Lab: Applied Electronics Lab

Government Polytechnic Muzaffarpur Name of the Lab: Applied Electronics Lab Government Polytechnic Muzaffarpur Name of the Lab: Applied Electronics Lab Subject Code: 1620408 Experiment-1 Aim: To obtain the characteristics of field effect transistor (FET). Theory: The Field Effect

More information

Module 04.(B1) Electronic Fundamentals

Module 04.(B1) Electronic Fundamentals 1.1a. Semiconductors - Diodes. Module 04.(B1) Electronic Fundamentals Question Number. 1. What gives the colour of an LED?. Option A. The active element. Option B. The plastic it is encased in. Option

More information

SIMULATION DESIGN TOOL LABORATORY MANUAL

SIMULATION DESIGN TOOL LABORATORY MANUAL SHANKERSINH VAGHELA BAPU INSTITUTE OF TECHNOLOGY SIMULATION DESIGN TOOL LABORATORY MANUAL B.E. 4 th SEMESTER-2015-16 SHANKERSINH VAGHELA BAPU INSTITUTE OF TECHNOLOGY Gandhinagar-Mansa Road, PO. Vasan,

More information

Figure1: Basic BJT construction.

Figure1: Basic BJT construction. Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).

More information

Chapter 2. Diodes & Applications

Chapter 2. Diodes & Applications Chapter 2 Diodes & Applications The Diode A diode is made from a small piece of semiconductor material, usually silicon, in which half is doped as a p region and half is doped as an n region with a pn

More information

Table of Contents. iii

Table of Contents. iii Table of Contents Subject Page Experiment 1: Diode Characteristics... 1 Experiment 2: Rectifier Circuits... 7 Experiment 3: Clipping and Clamping Circuits 17 Experiment 4: The Zener Diode 25 Experiment

More information

SIR PADAMPAT SINGHANIA UNIVERSITY

SIR PADAMPAT SINGHANIA UNIVERSITY SIR PADAMPAT SINGHANIA UNIVERSITY SCHOOL OF ENGINEERING BHATEWAR-3360 ELECTRONIC DEVICES AND CIRCUITS LABORATORY MANUAL DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING [[ Objective: ) P-N JUNCTION

More information

WINTER 14 EXAMINATION. Model Answer. 1) The answers should be examined by key words and not as word-to-word as given in the

WINTER 14 EXAMINATION. Model Answer. 1) The answers should be examined by key words and not as word-to-word as given in the WINTER 14 EXAMINATION Subject Code: 17213 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)

More information

SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N

SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate

More information

7. Bipolar Junction Transistor

7. Bipolar Junction Transistor 41 7. Bipolar Junction Transistor 7.1. Objectives - To experimentally examine the principles of operation of bipolar junction transistor (BJT); - To measure basic characteristics of n-p-n silicon transistor

More information

INDEX Configuration. 4 Input & Output Characteristics of Transistor in CE

INDEX Configuration. 4 Input & Output Characteristics of Transistor in CE INDEX S.NO NAME OF THE EXPERIMENT PAGE NO. 1 Forward and Reverse Characteristics of PN Junction Diode. 1-8 2 Zener Diode Characteristics and Zener as Voltage Regulator 9-16 3 Input & Output Characteristics

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified)

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) WINTER 16 EXAMINATION Model Answer Subject Code: 17213 Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)

More information

Practical Manual. Deptt.of Electronics &Communication Engg. (ECE)

Practical Manual. Deptt.of Electronics &Communication Engg. (ECE) Practical Manual LAB: BASICS OF ELECTRONICS 1 ST SEM.(CSE/CV) Deptt.of Electronics &Communication Engg. (ECE) RAO PAHALD SINGH GROUP OF INSTITUTIONS BALANA(MOHINDER GARH)12302 Prepared By. Mr.SANDEEP KUMAR

More information

UNIT-I SEMICONDUCTOR DEVICES

UNIT-I SEMICONDUCTOR DEVICES SEMICONDUCTOR MATERIALS: UNIT-I SEMICONDUCTOR DEVICES INSULATOR: An insulator is a material that offers a very low level of conductivity under Pressure from an applied voltage source. In this material

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Summer 2016 EXAMINATIONS.

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Summer 2016 EXAMINATIONS. Summer 2016 EXAMINATIONS Subject Code: 17321 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the answer scheme. 2) The

More information

Emitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward

Emitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward SEMICONDUCTOR PHYSICS-2 [Transistor, constructional characteristics, biasing of transistors, transistor configuration, transistor as an amplifier, transistor as a switch, transistor as an oscillator] Transistor

More information

F.Y. Diploma : Sem. II [CO/CD/CM/CW/IF] Basic Electronics

F.Y. Diploma : Sem. II [CO/CD/CM/CW/IF] Basic Electronics F.Y. Diploma : Sem. II [CO/CD/CM/CW/IF] Basic Electronics Time : 3 Hrs.] Prelim Question Paper Solutions [Marks : 100 Q.1 Attempt any TEN of the following : [20] Q.1(a) Give the classification of capacitor.

More information

Scheme Q.1 Attempt any SIX of following 12-Total Marks 1 A) Draw symbol of P-N diode, Zener diode. 2 M Ans: P-N diode

Scheme Q.1 Attempt any SIX of following 12-Total Marks 1 A) Draw symbol of P-N diode, Zener diode. 2 M Ans: P-N diode Q. No. WINTER 16 EXAMINATION (Subject Code: 17321) Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in themodel answer scheme.

More information

Applications of Diode

Applications of Diode Applications of Diode Diode Approximation: (Large signal operations): 1. Ideal Diode: When diode is forward biased, resistance offered is zero, When it is reverse biased resistance offered is infinity.

More information

Q1 A) Attempt any six: i) Draw the neat symbol of N-channel and P-channel FET

Q1 A) Attempt any six: i) Draw the neat symbol of N-channel and P-channel FET Subject Code:17319 Model Answer Page1 of 27 Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model

More information

EXPERIMENT 7: DIODE CHARACTERISTICS AND CIRCUITS 10/24/10

EXPERIMENT 7: DIODE CHARACTERISTICS AND CIRCUITS 10/24/10 DIODE CHARACTERISTICS AND CIRCUITS EXPERIMENT 7: DIODE CHARACTERISTICS AND CIRCUITS 10/24/10 In this experiment we will measure the I vs V characteristics of Si, Ge, and Zener p-n junction diodes, and

More information

Document Name: Electronic Circuits Lab. Facebook: Twitter:

Document Name: Electronic Circuits Lab.  Facebook:  Twitter: Document Name: Electronic Circuits Lab www.vidyathiplus.in Facebook: www.facebook.com/vidyarthiplus Twitter: www.twitter.com/vidyarthiplus Copyright 2011-2015 Vidyarthiplus.in (VP Group) Page 1 CIRCUIT

More information

Dhanalakshmi College of Engineering

Dhanalakshmi College of Engineering Dhanalakshmi College of Engineering Manimangalam, Tambaram, Chennai 601 301 DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC8311 ELECTRONICS LABORATORY III SEMESTER - R 2017 LABORATORY MANUAL Name

More information

Basic Electronics SYLLABUS BASIC ELECTRONICS. Subject Code : 15ELN15/25 IA Marks : 20. Hrs/Week : 04 Exam Hrs. : 03. Total Hrs. : 50 Exam Marks : 80

Basic Electronics SYLLABUS BASIC ELECTRONICS. Subject Code : 15ELN15/25 IA Marks : 20. Hrs/Week : 04 Exam Hrs. : 03. Total Hrs. : 50 Exam Marks : 80 SYLLABUS BASIC ELECTRONICS Subject Code : /25 IA Marks : 20 Hrs/Week : 04 Exam Hrs. : 03 Total Hrs. : 50 Exam Marks : 80 Course objectives: The course objective is to make students of all the branches

More information

ELECTRONIC DEVICES AND CIRCUITS (EDC) LABORATORY MANUAL

ELECTRONIC DEVICES AND CIRCUITS (EDC) LABORATORY MANUAL ELECTRONIC DEVICES AND CIRCUITS (EDC) LABORATORY MANUAL (B.E. THIRD SEMESTER - BEENE302P / BEECE302P/ BEETE302P) Prepared by Prof. S. Irfan Ali HOD PROF. M. NASIRUDDIN DEPARTMENT OF ELECTRONICS & TELECOMMUNICATION

More information

AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014

AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014 Q.2 a. State and explain the Reciprocity Theorem and Thevenins Theorem. a. Reciprocity Theorem: If we consider two loops A and B of network N and if an ideal voltage source E in loop A produces current

More information

Electronic devices & circuits

Electronic devices & circuits Dundigal, Quthbullapur (M), Hyderabad 43 LABORATORY MANUAL Electronic devices & circuits II B.TECH -I Semester (ECE) AY-2017-2018 DEPARTMENT OF ECE MARRI LAXMAN REDDY INSTITUTE OF TECHNOLOGY & MANAGEMENT

More information

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)

More information

Module 2. B.Sc. I Electronics. Developed by: Mrs. Neha S. Joshi Asst. Professor Department of Electronics Willingdon College, Sangli

Module 2. B.Sc. I Electronics. Developed by: Mrs. Neha S. Joshi Asst. Professor Department of Electronics Willingdon College, Sangli Module 2 B.Sc. I Electronics Developed by: Mrs. Neha S. Joshi Asst. Professor Department of Electronics Willingdon College, Sangli BIPOLAR JUNCTION TRANSISTOR SCOPE OF THE CHAPTER- This chapter introduces

More information

CIRCUIT DIAGRAM Half Wave Rectifier. Half Wave Rectifier with filter 2012/ODD/III/ECE/EC I/LM 1

CIRCUIT DIAGRAM Half Wave Rectifier. Half Wave Rectifier with filter 2012/ODD/III/ECE/EC I/LM 1 CIRCUIT DIAGRAM Half Wave Rectifier Half Wave Rectifier with filter 2012/ODD/III/ECE/EC I/LM 1 Ex.No. 1 Date: / /2012 Power supply circuit using Half Wave rectifiers AIM To Build and understand the operation

More information

EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS. 1. Define diffusion current.

EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS. 1. Define diffusion current. EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS 1. Define diffusion current. A movement of charge carriers due to the concentration gradient in a semiconductor is called process

More information

Electronic Circuits II - Revision

Electronic Circuits II - Revision Electronic Circuits II - Revision -1 / 16 - T & F # 1 A bypass capacitor in a CE amplifier decreases the voltage gain. 2 If RC in a CE amplifier is increased, the voltage gain is reduced. 3 4 5 The load

More information

REV NO EXPERIMENT NO 1 AIM: To study the PN junction diode characteristics under Forward & Reverse bias conditions. APPARATUS REQUIRED:

REV NO EXPERIMENT NO 1 AIM: To study the PN junction diode characteristics under Forward & Reverse bias conditions. APPARATUS REQUIRED: KARNAL INSTITUTE OF TECHNOLOGY & MANAGEMENT KUNJPURA, KARNAL LAB MANUAL OF ------- SUBJECT CODE DATE OF ISSUE: SEMESTER: BRANCH: REV NO EXPERIMENT NO 1 AIM: To study the PN junction diode characteristics

More information

Field - Effect Transistor

Field - Effect Transistor Page 1 of 6 Field - Effect Transistor Aim :- To draw and study the out put and transfer characteristics of the given FET and to determine its parameters. Apparatus :- FET, two variable power supplies,

More information

Federal Urdu University of Arts, Science & Technology Islamabad Pakistan SECOND SEMESTER ELECTRONICS - I

Federal Urdu University of Arts, Science & Technology Islamabad Pakistan SECOND SEMESTER ELECTRONICS - I SECOND SEMESTER ELECTRONICS - I BASIC ELECTRICAL & ELECTRONICS LAB DEPARTMENT OF ELECTRICAL ENGINEERING Prepared By: Checked By: Approved By: Engr. Yousaf Hameed Engr. M.Nasim Khan Dr.Noman Jafri Lecturer

More information

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth

More information

Analog Electronic Circuits

Analog Electronic Circuits Analog Electronic Circuits Chapter 1: Semiconductor Diodes Objectives: To become familiar with the working principles of semiconductor diode To become familiar with the design and analysis of diode circuits

More information

Diodes and Applications

Diodes and Applications Diodes and Applications Diodes and Applications 2 1 Diode Operation 2 2 Voltage-Current (V-I) Characteristics 2 3 Diode Models 2 4 Half-Wave Rectifiers 2 5 Full-Wave Rectifiers 2 6 Power Supply Filters

More information

CHAPTER 1 DIODE CIRCUITS. Semiconductor act differently to DC and AC currents

CHAPTER 1 DIODE CIRCUITS. Semiconductor act differently to DC and AC currents CHAPTER 1 DIODE CIRCUITS Resistance levels Semiconductor act differently to DC and AC currents There are three types of resistances 1. DC or static resistance The application of DC voltage to a circuit

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Summer 2016 EXAMINATIONS

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Summer 2016 EXAMINATIONS Summer 2016 EXAMINATIONS Subject Code: 17213 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the answer scheme. 2) The

More information

Subject Code: Model Answer Page No: / N

Subject Code: Model Answer Page No: / N Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate

More information

Bipolar Junction Transistors

Bipolar Junction Transistors Bipolar Junction Transistors Invented in 1948 at Bell Telephone laboratories Bipolar junction transistor (BJT) - one of the major three terminal devices Three terminal devices more useful than two terminal

More information

Diode Limiters or Clipper Circuits

Diode Limiters or Clipper Circuits Diode Limiters or Clipper Circuits Circuits which are used to clip off portions of signal voltages above or below certain levels are called limiters or clippers. Types of Clippers Positive Clipper Negative

More information

THIRD SEMESTER DIPLOMA EXAMINATION IN ELECTRICAL & ELECTRONICS ENGINEERING, MARCH 2013 ELECTRONIC DEVICES AND CIRCUITS

THIRD SEMESTER DIPLOMA EXAMINATION IN ELECTRICAL & ELECTRONICS ENGINEERING, MARCH 2013 ELECTRONIC DEVICES AND CIRCUITS REVISION-2010 Reg. No SUB CODE:3053 Signature THIRD SEMESTER DIPLOMA EXAMINATION IN ELECTRICAL & ELECTRONICS ENGINEERING, MARCH 2013 ELECTRONIC DEVICES AND CIRCUITS Time :3hours Maximum marks:100 PART

More information

Class XII - Physics Semiconductor Electronics. Chapter-wise Problems

Class XII - Physics Semiconductor Electronics. Chapter-wise Problems lass X - Physics Semiconductor Electronics Materials, Device and Simple ircuit hapter-wise Problems Multiple hoice Question :- 14.1 The conductivity of a semiconductor increases with increase in temperature

More information

EC 6411 CIRCUITS AND SIMULATION INTEGRATED LABORATORY LABORATORY MANUAL INDEX EXPT.NO NAME OF THE EXPERIMENT PAGE NO 1 HALF WAVE AND FULL WAVE RECTIFIER 3 2 FIXED BIAS AMPLIFIER CIRCUIT USING BJT 3 BJT

More information

VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR

VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR 603 203. DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC8311 ELECTRONICS LABORATORY LAB MANUAL II Year - III Semester (2018 2019 ODD) Regulation

More information

Examples to Power Supply

Examples to Power Supply Examples to Power Supply Example-1: A center-tapped full-wave rectifier connected to a transformer whose each secondary coil has a r.m.s. voltage of 1 V. Assume the internal resistances of the diode and

More information

UNIT II JFET, MOSFET, SCR & UJT

UNIT II JFET, MOSFET, SCR & UJT UNIT II JFET, MOSFET, SCR & UJT JFET JFET as an Amplifier and its Output Characteristics JFET Applications MOSFET Working Principles, SCR Equivalent Circuit and V-I Characteristics. SCR as a Half wave

More information

RECTIFIERS AND POWER SUPPLIES

RECTIFIERS AND POWER SUPPLIES UNIT V RECTIFIERS AND POWER SUPPLIES Half-wave, full-wave and bridge rectifiers with resistive load. Analysis for Vdc and ripple voltage with C,CL, L-C and C-L-C filters. Voltage multipliers Zenerdiode

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Subject Code: Model Answer Page No: 1/

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Subject Code: Model Answer Page No: 1/ MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC 27001 2005 Certified) SUMMER 13 EXAMINATION Subject Code: 12025 Model Answer Page No: 1/ Important Instructions to examiners: 1) The

More information

Experiments in Analog Electronics

Experiments in Analog Electronics Ministry of Higher Education and Scientific Research University of Technology Department of Electrical Engineering Analog Electronics Laboratory Experiments in Analog Electronics By Firas Mohammed Ali

More information

2 MARKS EE2203 ELECTRONIC DEVICES AND CIRCUITS UNIT 1

2 MARKS EE2203 ELECTRONIC DEVICES AND CIRCUITS UNIT 1 2 MARKS EE2203 ELECTRONIC DEVICES AND CIRCUITS UNIT 1 1. Define PN junction. When a p type semiconductor is joined to a N type semiconductor the contact surface is called PN junction. 2. What is an ideal

More information

Physics of Bipolar Transistor

Physics of Bipolar Transistor Physics of Bipolar Transistor Motivations - In many electronic applications, amplifier is the most fundamental building block. Ex Audio amplifier: amplifies electric signal to drive a speaker RF Power

More information

Electronic Devices 1. Current flowing in each of the following circuits A and respectively are: (Circuit 1) (Circuit 2) 1) 1A, 2A 2) 2A, 1A 3) 4A, 2A 4) 2A, 4A 2. Among the following one statement is not

More information

Lecture -1: p-n Junction Diode

Lecture -1: p-n Junction Diode Lecture -1: p-n Junction Diode Diode: A pure silicon crystal or germanium crystal is known as an intrinsic semiconductor. There are not enough free electrons and holes in an intrinsic semi-conductor to

More information

OBJECTIVE TYPE QUESTIONS

OBJECTIVE TYPE QUESTIONS OBJECTIVE TYPE QUESTIONS Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called (A) avalanche breakdown. (B) zener breakdown. (C) breakdown by tunnelling.

More information

Analog Electronics circuits

Analog Electronics circuits ANALOG ELECTRONIC CIRCUITS code: IA marks:25 exam marks:100 UNIT 1: Diode Circuits: Diode Resistance, Diode equivalent circuits, Transition and diffusion capacitance, Reverse recovery time, Load line analysis,

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-1 Transistor

More information

(a) BJT-OPERATING MODES & CONFIGURATIONS

(a) BJT-OPERATING MODES & CONFIGURATIONS (a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base

More information

UNIT 3: FIELD EFFECT TRANSISTORS

UNIT 3: FIELD EFFECT TRANSISTORS FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are

More information

Analog Electronics Laboratory

Analog Electronics Laboratory Circuit Diagram a) Center tap FWR without filter b) Center tap FWR with C filter AC Supply AC Supply D2 c) Bridge Rectifier without filter d) Bridge Rectifier with C filter AC Supply AC Supply Waveforms

More information

Basic Electronic Devices and Circuits EE 111 Electrical Engineering Majmaah University 2 nd Semester 1432/1433 H. Chapter 2. Diodes and Applications

Basic Electronic Devices and Circuits EE 111 Electrical Engineering Majmaah University 2 nd Semester 1432/1433 H. Chapter 2. Diodes and Applications Basic Electronic Devices and Circuits EE 111 Electrical Engineering Majmaah University 2 nd Semester 1432/1433 H Chapter 2 Diodes and Applications 1 Diodes A diode is a semiconductor device with a single

More information

ANNA UNIVERSITY, Chennai 2013 REGULATION DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGG. EC6211 CIRCUITS AND DEVICES LABORATORY (I B.E II Semester Batch 2013) EC6211 CIRCUITS AND DEVICES LABORATORY List

More information

CRO AIM:- To study the use of Cathode Ray Oscilloscope (CRO).

CRO AIM:- To study the use of Cathode Ray Oscilloscope (CRO). 1. 1 To study CRO. CRO AIM:- To study the use of Cathode Ray Oscilloscope (CRO). Apparatus: - C.R.O, Connecting probe (BNC cable). Theory:An CRO is easily the most useful instrument available for testing

More information

Lesson Plan. Week Theory Practical Lecture Day. Topic (including assignment / test) Day. Thevenin s theorem, Norton s theorem

Lesson Plan. Week Theory Practical Lecture Day. Topic (including assignment / test) Day. Thevenin s theorem, Norton s theorem Name of the faculty: GYANENDRA KUMAR YADAV Discipline: APPLIED SCIENCE(C.S.E,E.E.ECE) Year : 1st Subject: FEEE Lesson Plan Lesson Plan Duration: 31 weeks (from July, 2018 to April, 2019) Week Theory Practical

More information

COE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline

COE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline COE/EE152: Basic Electronics Lecture 5 Andrew Selasi Agbemenu 1 Outline Physical Structure of BJT Two Diode Analogy Modes of Operation Forward Active Mode of BJTs BJT Configurations Early Effect Large

More information

WINTER 17 EXAMINATION Subject Name: Basic Electronics Model Answer Sub Code:

WINTER 17 EXAMINATION Subject Name: Basic Electronics Model Answer Sub Code: Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate

More information

EC8351-ELECTRON DEVICES AND CIRCUITS TWO MARK QUESTIONS AND ANSWERS UNIT-I PN JUNCTION DEVICES

EC8351-ELECTRON DEVICES AND CIRCUITS TWO MARK QUESTIONS AND ANSWERS UNIT-I PN JUNCTION DEVICES TWO MARK QUESTIONS AND ANSWERS UNIT-I PN JUNCTION DEVICES 1) Define semiconductor. Semiconductor is a substance, which has resistivity in between Conductors and insulators. Eg. Germanium, Silicon. 2) Define

More information

SETH JAI PARKASH POLYTECHNIC, DAMLA

SETH JAI PARKASH POLYTECHNIC, DAMLA SETH JAI PARKASH POLYTECHNIC, DAMLA NAME OF FACULTY----------SANDEEP SHARMA DISCIPLINE---------------------- E.C.E (S.F) SEMESTER-------------------------2 ND SUBJECT----------------------------BASIC ELECTRONICS

More information

Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each)

Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each) Q. No. WINTER 16 EXAMINATION (Subject Code: 17319) Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer

More information

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M) SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave

More information

AIM:-To observe and draw the Forward bias V-I Characteristics of a P-N Junction diode and study of L.E.D characteristics.

AIM:-To observe and draw the Forward bias V-I Characteristics of a P-N Junction diode and study of L.E.D characteristics. KARNAL INSTITUTE OF TECHNOLOGY & MANAGEMENT KUNJPURA, KARNAL LAB MANUAL OF ------- SUBJECT CODE DATE OF ISSUE: SEMESTER: BRANCH: REV NO EXPERIMENT NO 1 P-N JUNCTION DIODE CHARACTERISTICS AIM:-To observe

More information

2) The larger the ripple voltage, the better the filter. 2) 3) Clamping circuits use capacitors and diodes to add a dc level to a waveform.

2) The larger the ripple voltage, the better the filter. 2) 3) Clamping circuits use capacitors and diodes to add a dc level to a waveform. TRUE/FALSE. Write 'T' if the statement is true and 'F' if the statement is false. 1) A diode conducts current when forward-biased and blocks current when reverse-biased. 1) 2) The larger the ripple voltage,

More information

Electronics 1 Lab (CME 2410) School of Informatics & Computing German Jordanian University Laboratory Experiment (10) Junction FETs

Electronics 1 Lab (CME 2410) School of Informatics & Computing German Jordanian University Laboratory Experiment (10) Junction FETs Electronics 1 Lab (CME 2410) School of Informatics & Computing German Jordanian University Laboratory Experiment (10) 1. Objective: Junction FETs - the operation of a junction field-effect transistor (J-FET)

More information

1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is

1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is 1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is A [ ]) the diode is open. B [ ]) the diode is shorted to ground. C [v]) the diode is

More information

Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.

Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition. Program Name Program Code Semester Course Title Scheme I Sample Question Paper : Diploma in Electronics Program Group : DE/EJ/IE/IS/ET/EN/EX : Second : Basic Electronics : 70 22216 Time: 3 Hrs. Instructions:

More information

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Lecture outline Historical introduction Semiconductor devices overview Bipolar Junction Transistor (BJT) Field

More information

Electronic & Telecommunication Engineering

Electronic & Telecommunication Engineering Department of Electronic & Telecommunication Engineering LAB MANUAL ADC B.Tech 3rd Semester KCT College of Engineering & Technology Village Fatehgarh (Distt. Sangrur) INDEX List Of Experiment To construct

More information

The shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect

The shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect Diode as Clamper A clamping circuit is used to place either the positive or negative peak of a signal at a desired level. The dc component is simply added or subtracted to/from the input signal. The clamper

More information

THE JFET. Script. Discuss the JFET and how it differs from the BJT. Describe the basic structure of n-channel and p -channel JFETs

THE JFET. Script. Discuss the JFET and how it differs from the BJT. Describe the basic structure of n-channel and p -channel JFETs Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 12 Lecture Title: Analog Circuits

More information

F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics

F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics F.Y. Diploma : Sem. II [DE/EJ/IE/IS/EE/MU/ET/EN/EX] Basic Electronics Time: 3 Hrs.] Prelim Question Paper Solution [Marks : 70 Q.1 Attempt any FIE of the following : [10] Q.1(a) Draw the symbols for (i)

More information

Chapter 3 Bipolar Junction Transistors (BJT)

Chapter 3 Bipolar Junction Transistors (BJT) Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,

More information

Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3.

Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. What is difference between electron and hole? 4. Why electrons have

More information

AE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015

AE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015 Q.2 a. By using Norton s theorem, find the current in the load resistor R L for the circuit shown in Fig.1. (8) Fig.1 IETE 1 b. Explain Z parameters and also draw an equivalent circuit of the Z parameter

More information

DEPARTMENT OF ECE BAPATLA ENGINEERING COLLEGE BAPATLA

DEPARTMENT OF ECE BAPATLA ENGINEERING COLLEGE BAPATLA DEPARTMENT OF ECE BAPATLA ENGINEERING COLLEGE BAPATLA Electronic Devices (EC-251) Lab Manual Prepared by S.Pallaviram, Lecturer T. Srinivasa Rao, Lecturer N.Kusuma, Lab Assistant Department of ECE BEC

More information

Chapter 8. Field Effect Transistor

Chapter 8. Field Effect Transistor Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There

More information

Electronics Lab. (EE21338)

Electronics Lab. (EE21338) Princess Sumaya University for Technology The King Abdullah II School for Engineering Electrical Engineering Department Electronics Lab. (EE21338) Prepared By: Eng. Eyad Al-Kouz October, 2012 Table of

More information

Unit III FET and its Applications. 2 Marks Questions and Answers

Unit III FET and its Applications. 2 Marks Questions and Answers Unit III FET and its Applications 2 Marks Questions and Answers 1. Why do you call FET as field effect transistor? The name field effect is derived from the fact that the current is controlled by an electric

More information

PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS

PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS Due Date (NOTE CHANGE): Thursday, Nov 12 th @ 5 pm; Late penalty in effect! Most active electronic devices are based on the transistor as the fundamental

More information

After performing this experiment, you should be able to:

After performing this experiment, you should be able to: Objectives: After performing this experiment, you should be able to: Demonstrate the strengths and weaknesses of the two basic rectifier circuits. Draw the output waveforms for the two basic rectifier

More information

Summer 2015 Examination. 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme.

Summer 2015 Examination. 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. Summer 2015 Examination Subject Code: 17213 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme.

More information

Mechatronics and Measurement. Lecturer:Dung-An Wang Lecture 2

Mechatronics and Measurement. Lecturer:Dung-An Wang Lecture 2 Mechatronics and Measurement Lecturer:Dung-An Wang Lecture 2 Lecture outline Reading:Ch3 of text Today s lecture Semiconductor 2 Diode 3 4 Zener diode Voltage-regulator diodes. This family of diodes exhibits

More information

ET215 Devices I Unit 4A

ET215 Devices I Unit 4A ITT Technical Institute ET215 Devices I Unit 4A Chapter 3, Section 3.1-3.2 This unit is divided into two parts; Unit 4A and Unit 4B Chapter 3 Section 3.1 Structure of Bipolar Junction Transistors The basic

More information

Bipolar junction transistors.

Bipolar junction transistors. Bipolar junction transistors. Third Semester Course code : 15EECC202 Analog electronic circuits (AEC) Team: Dr. Nalini C Iyer, R.V. Hangal, Sujata N, Prashant A, Sneha Meti AEC Team, Faculty, School of

More information