Chap. 4 BJT transistors
|
|
|
- Cecil Hines
- 5 years ago
- Views:
Transcription
1 Chap. 4 BJT transistors Widely used in amplifier circuits Formed by junction of 3 materials npn or pnp structure ECE Electronics - Dr. S. Kozaitis- 1
2 ECE Electronics - Dr. S. Kozaitis- 2
3 pnp transistor ECE Electronics - Dr. S. Kozaitis- 3
4 ECE Electronics - Dr. S. Kozaitis- 4
5 ECE Electronics - Dr. S. Kozaitis- 5
6 Operation of npn transistor Large current ECE Electronics - Dr. S. Kozaitis- 6
7 Modes of operation of a BJT transistor Mode BE junction BC junction cutoff reverse biased reverse biased linear(active) forward biased reverse biased saturation forward biased forward biased ECE Electronics - Dr. S. Kozaitis- 7
8 Summary of npn transistor behavior npn IC IB base + small current VBE - collector emitter IE large current ECE Electronics - Dr. S. Kozaitis- 8
9 Summary of pnp transistor behavior pnp IC IB base + small current VBE - collector emitter IE large current ECE Electronics - Dr. S. Kozaitis- 9
10 Summary of equations for a BJT IE IC IC = IB is the current gain of the transistor 100 VBE = 0.7V(npn) VBE = -0.7V(pnp) ECE Electronics - Dr. S. Kozaitis- 10
11 4.5 Graphical representation of transistor characteristics IC IB Output circuit Input circuit IE ECE Electronics - Dr. S. Kozaitis- 11
12 Input characteristics IB IB 0.7V VBE Acts as a diode VBE 0.7V ECE Electronics - Dr. S. Kozaitis- 12
13 Output characteristics IC IC IB = 40 A IB = 30 A IB = 20 A IB = 10 A Early voltage ECE Electronics - Dr. S. Kozaitis- 13 Cutoff region At a fixed IB, IC is not dependent on VCE Slope of output characteristics in linear region is near 0 (scale exaggerated) VCE
14 Biasing a transistor We must operate the transistor in the linear region. A transistor s operating point (Q-point) is defined by IC, VCE, and IB. ECE Electronics - Dr. S. Kozaitis- 14
15 4.6 Analysis of transistor circuits at DC For all circuits: assume transistor operates in linear region write B-E voltage loop write C-E voltage loop Example 4.2 B-E junction acts like a diode VE = VB - VBE = 4V - 0.7V = 3.3V IC IE IE = (VE - 0)/RE = 3.3/3.3K = 1mA IC IE = 1mA VC = 10 - ICRC = 10-1(4.7) = 5.3V ECE Electronics - Dr. S. Kozaitis- 15
16 Example 4.6 = 100 B-E Voltage loop 5 = IBRB + VBE, solve for IB IB = (5 - VBE)/RB = (5-.7)/100k = 0.043mA IC IC = IB = (100)0.043mA = 4.3mA IB IE VC = 10 - ICRC = (2) = 1.4V ECE Electronics - Dr. S. Kozaitis- 16
17 Exercise 4.8 VE = = - 0.7V = 50 IE = (VE - -10)/RE = ( )/10K = 0.93mA IC IC IE = 0.93mA IB IB = IC/ m IE VC = 10 - ICRC = (5) = 5.35V VCE = = 6.05V ECE Electronics - Dr. S. Kozaitis- 17
18 Summary of npn transistor behavior npn IC IB base + small current VBE - collector emitter IE large current ECE Electronics - Dr. S. Kozaitis- 18
19 Summary of equations for a BJT IE IC IC = IB is the current gain of the transistor 100 VBE = 0.7V(npn) VBE = -0.7V(pnp) ECE Electronics - Dr. S. Kozaitis- 19
20 I IB Prob Use a voltage divider, RB1 and RB2 to bias VB to avoid two power supplies. Make the current in the voltage divider about 10 times IB to simplify the analysis. Use VB = 3V and I = 0.2mA. (a) RB1 and RB2 form a voltage divider. Assume I >> IB AND.2mA = 9 /(RB1 + RB2) VB = VCC[RB2/(RB1 + RB2)] I = VCC/(RB1 + RB2) 3 = 9 [RB2/(RB1 + RB2)], Solve for RB1 and RB2. RB1 = 30K, and RB2 = 15K. ECE Electronics - Dr. S. Kozaitis- 20
21 Prob Find the operating point Use the Thevenin equivalent circuit for the base Makes the circuit simpler VBB = VB = 3V RBB is measured with voltage sources grounded RBB = RB1 RB2 = 30K 15K. 10K ECE Electronics - Dr. S. Kozaitis- 21
22 Prob Write B-E loop and C-E loop B-E loop VBB = IBRBB + VBE +IERE C-E loop C-E loop VCC = ICRC + VCE +IERE B-E loop Solve for, IC, VCE, and IB. This is how all DC circuits are analyzed and designed! ECE Electronics - Dr. S. Kozaitis- 22
23 Example stage amplifier, 1st stage has an npn transistor; 2nd stage has an pnp transistor. IC = IB IC IE VBE = 0.7(npn) = -0.7(pnp) = 100 Find IC1, IC2, VCE1, VCE2 Use Thevenin circuits. ECE Electronics - Dr. S. Kozaitis- 23
24 Example 4.8 IB1 IE1 RBB1 = RB1 RB2 = 33K VBB1 = VCC[RB2/(RB1+RB2)] VBB1 = 15[50K/150K] = 5V Stage 1 B-E loop VBB1 = IB1RBB1 + VBE +IE1RE1 Use IB1 IE1/ 5 = IE133K / IE13K IE1 = 1.3mA ECE Electronics - Dr. S. Kozaitis- 24
25 Example 4.8 C-E loop neglect IB2 because it is IB2 << IC1 IC1 VCC = IC1RC1 + VCE1 +IE1RE1 15 = 1.3(5) + VCE1 +1.3(3) IE1 VCE1= 4.87V ECE Electronics - Dr. S. Kozaitis- 25
26 Example 4.8 Stage 2 B-E loop IE2 VCC = IE2RE2 + VEB +IB2RBB2 + VBB2 15 = IE2(2K) +.7 +IB2 (5K) (3) Use IB2 IE2/ solve for IE2 IB2 IE2 = 2.8mA ECE Electronics - Dr. S. Kozaitis- 26
27 Example 4.8 IE2 Stage 2 C-E loop VCC = IE2RE2 + VEC2 +IC2RC2 15 = 2.8(2) + VEC (2.7) solve for VEC2 IC2 VCE2 = 1.84V ECE Electronics - Dr. S. Kozaitis- 27
28 Summary of DC problem Bias transistors so that they operate in the linear region B-E junction forward biased, C-B junction reversed biased Use VBE = 0.7 (npn), IC IE, IC = IB Represent base portion of circuit by the Thevenin circuit Write B-E, and C-E voltage loops. For analysis, solve for IC, and VCE. For design, solve for resistor values (IC and VCE specified). ECE Electronics - Dr. S. Kozaitis- 28
29 4.7 Transistor as an amplifier Transistor circuits are analyzed and designed in terms of DC and ac versions of the same circuit. An ac signal is usually superimposed on the DC circuit. The location of the operating point (values of IC and VCE) of the transistor affects the ac operation of the circuit. There are at least two ac parameters determined from DC quantities. ECE Electronics - Dr. S. Kozaitis- 29
30 Transconductance IB ac output signal DC output signal A small ac signal vbe is superimposed on the DC voltage VBE. It gives rise to a collector signal current ic, superimposed on the dc current IC. The slope of the ic - vbe curve at the bias point Q is the transconductance gm: the amount of ac current produced by an ac voltage. ECE Electronics - Dr. S. Kozaitis- 30 (DC input signal 0.7V) ac input signal
31 Transconductance Transconductance = slope at Q point ac output signal gm = dic/dvbe ic = ICQ DC output signal where IC = IS[exp(-VBE/VT)-1]; the equation for a diode. gm = ISexp(-VBE/VT) (1/VT) gm IC/VT (A/V) DC input signal (0.7V) ac input signal ECE Electronics - Dr. S. Kozaitis- 31
32 ac input resistance of transistor IB ac output signal DC output signal ac input resistance 1/slope at Q point r = dvbe/dib ic = ICQ r VT /IB DC input signal (0.7V) re VT /IE ac input signal ECE Electronics - Dr. S. Kozaitis- 32
33 4.8 Small-signal equivalent circuit models ac model Hybrid- model They are equivalent Works in linear region only ECE Electronics - Dr. S. Kozaitis- 33
34 Steps to analyze a transistor circuit 1 DC problem Set ac sources to zero, solve for DC quantities, IC and VCE. 2 Determine ac quantities from DC parameters Find gm, r and re. 3 ac problem Set DC sources to zero, replace transistor by hybrid- ac quantites, Rin, Rout, Av, and Ai. model, find ECE Electronics - Dr. S. Kozaitis- 34
35 Example 4.9 Find vout/vin, ( = 100) DC problem Short vi, determine IC and VCE B-E voltage loop 3 = IBRB + VBE IB = (3 -.7)/RB = 0.023mA C-E voltage loop VCE = 10 - ICRC VCE = 10 - (2.3)(3) VCE = 3.1V Q point: VCE = 3.1V, IC = 2.3mA ECE Electronics - Dr. S. Kozaitis- 35
36 Example 4.9 b + vbe - e c + vout - ac problem Short DC sources, input and output circuits are separate, only coupled mathematically gm = IC/VT = 2.3mA/25mV = 92mA/V r = VT/ IB = 25mV/.023mA = 1.1K vbe= vi [r / (100K + r 011vi vout = - gm vberc vout = - 92 ( 011vi)3K vout/vi = ECE Electronics - Dr. S. Kozaitis- 36
37 Exercise 4.24 (a) Find VC, VB, and VE, given: = 100, VA = 100V IE = 1 ma IB IE/ = 0.01mA VB = 0 - IB10K = -0.1V VB VE = VB - VBE = = -0.8V VC = 10V - IC8K = 10-1(8) = 2V ECE Electronics - Dr. S. Kozaitis- 37
38 Exercise 4.24 (b) Find gm, r, and r, given: = 100, VA = 100V gm = IC/VT = 1 ma/25mv = 40 ma/v r = VT/ IB = 25mV/.01mA = 2.5K r0 = output resistance of transistor r0 = 1/slope of transistor output characteristics r0 = VA /IC = 100K ECE Electronics - Dr. S. Kozaitis- 38
39 Summary of transistor analysis Transistor circuits are analyzed and designed in terms of DC and ac versions of the same circuit. An ac signal is usually superimposed on the DC circuit. The location of the operating point (values of IC and VCE) of the transistor affects the ac operation of the circuit. There are at least two ac parameters determined from DC quantities. ECE Electronics - Dr. S. Kozaitis- 39
40 Steps to analyze a transistor circuit 1 DC problem Set ac sources to zero, solve for DC quantities, IC and VCE. 2 Determine ac quantities from DC parameters Find gm, r and ro. 3 ac problem Set DC sources to zero, replace transistor by hybrid- ac quantites, Rin, Rout, Av, and Ai. model, find ro ECE Electronics - Dr. S. Kozaitis- 40
41 Circuit from Exercise Vout IE = 1 ma VC = 10V - IC8K = 10-1(8) = 2V IB IE/ = 0.01mA gm = IC/VT = 1 ma/25mv = 40 ma/v VB = 0 - IB10K = -0.1V r = VT/ IB = 25mV/.01mA = 2.5K VE = VB - VBE = = -0.8V ECE Electronics - Dr. S. Kozaitis- 41 -
42 ac equivalent circuit b e c + vout - vbe = (Rb Rpi)/ [(Rb Rpi) +Rs]vi vbe = 0.5vi Neglecting Ro vout = -(gmvbe)(rc RL) Av = vout/vi = - 80 vout = -(gmvbe)(ro Rc RL) vout = -154vbe Av = vout/vi = - 77 ECE Electronics - Dr. S. Kozaitis- 42
43 Prob =100 + Vout - ECE Electronics - Dr. S. Kozaitis- 43
44 Prob b ib c + Rin e = ib Rout Vout - (a) Find Rin Rin = Rpi = VT/IB = (25mV)100/.1 = 2.5K (c) Find Rout Rout = Rc = 47K (b) Find Av = vout/vin vout = - ib Rc vin = ib (R + Rpi) Av = vout/vin = - ib Rc/ ib (R + Rpi ) = - Rc/(R + Rpi) = - (47K)/(100K + 2.5K) = - ECE Electronics - Dr. S. Kozaitis- 44
45 4.9 Graphical analysis Input circuit B-E voltage loop VBB = IBRB +VBE IB = (VBB - VBE)/RB ECE Electronics - Dr. S. Kozaitis- 45
46 Graphical construction of IB and VBE IB = (VBB - VBE)/RB VBB/RB If VBE = 0, IB = VBB/RB If IB = 0, VBE = VBB ECE Electronics - Dr. S. Kozaitis- 46
47 Load line Output circuit C-E voltage loop VCC = ICRC +VCE IC = (VCC - VCE)/RC ECE Electronics - Dr. S. Kozaitis- 47
48 Graphical construction of IC and VCE IC = (VCC - VCE)/RC VCC/RC If VCE = 0, IC = VCC/RC If IC = 0, VCE = VCC ECE Electronics - Dr. S. Kozaitis- 48
49 Graphical analysis Input signal Output signal ECE Electronics - Dr. S. Kozaitis- 49
50 Bias point location effects Load-line A results in bias point Q A which is too close to V CC and thus limits the positive swing of v CE. Load-line B results in an operating point too close to the saturation region, thus limiting the negative swing of v CE. ECE Electronics - Dr. S. Kozaitis- 50
51 4.11 Basic single-stage BJT amplifier configurations We will study 3 types of BJT amplifiers CE - common emitter, used for AV, Ai, and general purpose CE with RE - common emitter with RE, same as CE but more stable CC common collector, used for Ai, low output resistance, used as an output stage CB common base (not covered) ECE Electronics - Dr. S. Kozaitis- 51
52 Common emitter amplifier ac equivalent circuit ECE Electronics - Dr. S. Kozaitis- 52
53 Common emitter amplifier Rin (Does not include source) ib iout + Rin = Rpi Vout - Rout (Does not include load) Rin Rout Rout = RC AV = Vout/Vin Vout = - ibrc Vin = ib(rs + Rpi) Ai = iout/iin iout = - ib iin = ib AV = - RC/ (Rs + Rpi) Ai = - ECE Electronics - Dr. S. Kozaitis- 53
54 Common emitter with RE amplifier ac equivalent circuit ECE Electronics - Dr. S. Kozaitis- 54
55 Common emitter with RE amplifier Rin Rin = V/ib + ib iout + V = ib Rpi + (ib + ib)re Rin = Rpi + (1 + )RE (usually large) V Rin - ib + ib Rout Vout - Rout Rout = RC AV = Vout/Vin Vout = - ibrc Vin = ib Rs + ib Rpi + (ib + ib)re AV = - RC/ (Rs + Rpi + (1 + )RE) (less than CE, but less sensitive to variations) Ai = iout/iin iout = - ib iin = ib Ai = - ECE Electronics - Dr. S. Kozaitis- 55
56 Common collector (emitter follower) amplifier b c e + vout - (vout at emitter) ac equivalent circuit ECE Electronics - Dr. S. Kozaitis- 56
57 Common collector amplifier + ib Rin Rin = V/ib V = ib Rpi + (ib + ib)rl Rin = Rpi + (1 + )RL V - Rin ib + ib + vout - AV = vout/vs vout = (ib + ib)rl vs = ib Rs + ib Rpi + (ib + ib)rl AV = (1+ RL/ (Rs + Rpi + (1 + )RL) (always < 1) ECE Electronics - Dr. S. Kozaitis- 57
58 Common collector amplifier ib Ai = iout/iin iout = ib + ib iin = ib Ai = ib + ib + vout - Rout Rout (don t include RL, set Vs = 0) Rout = vout /- (ib + ib) vout = -ib Rpi + -ibrs Rout = (Rpi + Rs) / (1+ (usually low) ECE Electronics - Dr. S. Kozaitis- 58
59 Prob Given = 50 + vout - ac circuit Rpi =VT/IB = 25mV(50)/.2mA = 6.6K CE with RE amp, because RE is in ac circuit ECE Electronics - Dr. S. Kozaitis- 59
60 Prob ib + V - Rin ib + ib (a) Find Rin Rin = V/ib V = ib Rpi + (ib + ib)re Rin = Rpi + (1 + )RE Rin = 6.6K + (1 + )125 Rin 13K ECE Electronics - Dr. S. Kozaitis- 60
61 ib Prob ib + vout ib + ib - (b) Find AV = vout/vs vout = - ib(rc RL) vs = ib Rs + ib Rpi + (ib + ib)re AV = - (RC RL) / (Rs + Rpi + (1 + )RE) AV = - (10K 10K) /(10K + 6.6Ki + (1 + )125) AV - ECE Electronics - Dr. S. Kozaitis- 61
62 ib Prob vbe - + vout ib + ib - (c) If vbe is limited to 5mV, what is the largest signal at input and output? vbe = ib Rpi = 5mV ib = vbe /Rpi = 5mV/6.6K = 0.76 A (ac value) vs = ib Rs + ib Rpi + (ib + ib)re vs = (0.76 A)10K + (0.76 A) 6.6K + (0.76 A + ( 0.76 A )125 vs 17.4mV ECE Electronics - Dr. S. Kozaitis- 62
63 ib Prob vbe - + vout ib + ib - (c) If vbe is limited to 5mV, what is the largest signal at input and output? vout = vs AV vout = 17.4mV(-11) vout -191mV (ac value) ECE Electronics - Dr. S. Kozaitis- 63
64 Prob = 100 Using this circuit, design an amp with: IE = 2mA AV = -8 current in voltage divider I = 0.2mA (CE amp because RE is not in ac circuit) Voltage divider Vcc/I = 9/0.2mA = 45K 45K = R1 + R2 Choose VB 1/3 Vcc to put operating point near the center of the transistor characteristics R2/(R1 + R2) = 1/3 Combining gives, R1 = 30K, R2 = 15K ECE Electronics - Dr. S. Kozaitis- 64
65 Prob Find RE (input circuit) Use Thevenin equivalent = 100 B-E loop VBB=IBRBB+VBE+IERE using IB IE/ RE = [VBB - VBE - (IE/ )RBB]/IE RE = [ (2mA/ )10K]/2mA RE = 1.05K IB + VBE - IE ECE Electronics - Dr. S. Kozaitis- 65
66 Prob vout - Find Rc (ac circuit) Rpi = VT/IB = 25mV(100)/2mA = 1.25K Ro = VA/IC = 100/2mA = 50K Av = vout/vin vout = -gmvbe (Ro Rc RL) vbe = 10K 1.2K / [10K+ 10K 1.2K]vi Av = -gm(ro Rc RL)(10K 1.2K) / [10K 1.2K +Rs] Set Av = -8, and solve for Rc, Rc 2K ECE Electronics - Dr. S. Kozaitis- 66
67 CE amplifier ECE Electronics - Dr. S. Kozaitis- 67
68 CE amplifier Av ECE Electronics - Dr. S. Kozaitis- 68
69 CE amplifier FOURIER COMPONENTS OF TRANSIENT RESPONSE V($N_0009) DC COMPONENT = E-01 HARMONIC FREQUENCY FOURIER NORMALIZED PHASE NORMALIZED NO (HZ) COMPONENT COMPONENT (DEG) PHASE (DEG) E E E E E E E E E E E E E E E E E E E E+01 TOTAL HARMONIC DISTORTION = E+01 PERCENT ECE Electronics - Dr. S. Kozaitis- 69
70 CE amplifier with RE ECE Electronics - Dr. S. Kozaitis- 70
71 CE amplifier with RE Av ECE Electronics - Dr. S. Kozaitis- 71
72 FOURIER COMPONENTS OF TRANSIENT RESPONSE V($N_0009) DC COMPONENT = E-02 HARMONIC FREQUENCY FOURIER NORMALIZED PHASE NORMALIZED NO (HZ) COMPONENT COMPONENT (DEG) PHASE (DEG) E E E E E E E E E E E E E E E E E E E E+01 TOTAL HARMONIC DISTORTION = E+00 PERCENT ECE Electronics - Dr. S. Kozaitis- 72
73 Summary Av THD CE % CE w/re (RE = 100) % ECE Electronics - Dr. S. Kozaitis- 73
74 Prob Rc=6.8K = vout RL=2K - 2 stage amplifier (a) Find IC and VC of each transistor Both stages are the same (same for each stage) Capacitively coupled ECE Electronics - Dr. S. Kozaitis- 74
75 (a) Find IC and VC of each transistor (same for each stage) Prob B-E voltage loop VBB = IBRBB + VBE + IERE where RBB = R1 R2 = 32K VBB = VCCR2/(R1+R2) = 4.8V, and IB IE/ + VC - IE = [VBB - VBE ]/[RBB/ + RE] IE = 0.97mA VC = VCC - ICRC VC = (6.8) VC = 8.39V ECE Electronics - Dr. S. Kozaitis- 75
76 Prob (b) find ac circuit b c b c + e e RL=2K vout - RBB = R1 R2 = 100K 47K = 32K Rpi = VT/IB = 25mV(100)/.97mA 2.6K gm = IC/VT =.97mA/25mV 39mA/V ECE Electronics - Dr. S. Kozaitis- 76
77 Prob Rin1 + b vb1 - e c Rin2 b + vb2 - e c + RL=2K vout - (c) find Rin1 Rin1 = RBB Rpi = 32K 2.6K = 2.4K find vb1/vi = Rin1/ [Rin1 + RS] = 2.4K/[2.4K + 5K] = 0.32 (d) find Rin2 Rin2 = RBB Rpi = 2.4K find vb2/vb1 vb2 = -gmvbe1[rc RBB Rpi] vb2/vbe1 = -gm[rc RBB Rpi] vb2/vb1 = -(39mA/V)[6.8 32K 2.6K] = ECE Electronics - Dr. S. Kozaitis- 77
78 Prob b vb1 - e c b + vb2 - e c + RL=2K vout - (e) find vout/vb2 vout = -gmvbe2[rc RL] vout/vbe2 = -gm[rc RL] vb2/vb1 = -(39mA/V)[6.8K 2K] = (f) find overall voltage gain vout/vi = (vb1/vi) (vb2/vb1) (vout/vb2) vout/vi = (0.32) (-69.1) (-60.3) vout/vi = 1332 ECE Electronics - Dr. S. Kozaitis- 78
79 Prob Q1 IE1 IB2 Q1 has = 20 Q2 has = 200 Q2 IE2 Find IE1, IE2, VB1, and VB2 IE2 = 2mA IE1 = I20 A + IB2 IE1 = I20 A + IE2/ 2 IE1 = 20 A + 10 A IE1 = 30 A ECE Electronics - Dr. S. Kozaitis- 79
80 Prob Find VB1, and VB2 Use Thevenin equivalent Q1 has = 20 Q2 has = 200 VB1 = VBB1 - IB1(RBB1) = (30 A/20)500K = 3.8V IB1 + vb1 IB2 + VB2 = VB1 - VBE = 3.8V = 3.1V - vb2 - ECE Electronics - Dr. S. Kozaitis- 80
81 Prob b1 c1 e1 + vb2 b2 c2 - e2 + vout - Rpi2 = VT/IB2 = VT 2/IE2 = 25mV(200)/2mA = 2.5K (b) find vout/vb2 vout = (ib2 + ib2)rl vb2 = (ib2 + ib2)rl + ib2rpi2 vout/vb2 = (1 + 2)RL/[(1 + 2)RL + Rpi2] = (1 + )1K/[(1 + )1K + 2.5K] ECE Electronics - Dr. S. Kozaitis- 81
82 Prob b1 c1 e1 + vb2 b2 c2 e2 Rin2 - (b) find Rin2 = vb2/ib2 vb2 = (ib2 + ib2)rl + ib2rpi2 Rin2 = vb2/ib2 = (1 + )RL + Rpi2 = (1 + )1K + 2.5K 204K ECE Electronics - Dr. S. Kozaitis- 82
83 Prob b1 ib1 e1 c1 vb1 b2 c2 e2 Rin1 - (c) find Rin1 = RBB1 (vb1/ib1) = RBB1 [ib1rpi1 + (ib1 + ib1)rin2]/ib1 = RBB1 [Rpi1 + (1+ )Rin2], where Rpi1 = VT 1/IE1 = 25mV(20)/30 A = 16.7K = 500K [16.7K + (1+ )204K] 500K ECE Electronics - Dr. S. Kozaitis- 83
84 Prob b1 ib1 c1 e1 + vb1 ve1 b2 c2 e2 - - (c) find ve1/vb1 ve1 = (ib1 + ib1)rin2 vb1 = (ib1 + ib1)rin2 + ib1rpi1 ve1/vb1 = (1 + 1) Rin2 /[(1 + 1) Rin2 + Rpi1] = (1 + )204K/[(1 + )204K K] ECE Electronics - Dr. S. Kozaitis- 84
85 Prob b1 e1 c1 vb1 b2 c2 e2 - (d) find vb1/vi vb1/vi = Rin1/[RS + Rin1] = 0.82 (e) find overall voltage gain vout/vi = (vb1/vi) (ve1/vb1) (vout/ve1) vout/vi = (0.82) (0.99) (0.99) vout/vi = 0.81 ECE Electronics - Dr. S. Kozaitis- 85
86 (Prob. 4.96) Voltage outputs at each stage Output of stage 2 Output of stage 1 Input ECE Electronics - Dr. S. Kozaitis- 86
87 (Prob. 4.96) Current Input to stage 2 (ib2) Input current ECE Electronics - Dr. S. Kozaitis- 87
88 (Prob. 4.96) Current Input to stage 2 (ib2) output current ECE Electronics - Dr. S. Kozaitis- 88
89 (Prob. 4.96) Current Input to stage 2 (ib2) Input current output current ECE Electronics - Dr. S. Kozaitis- 89
90 (Prob. 4.96) Power and current gain Input current = (Vi)/Rin = 1/500K = 2.0 A output current= (Vout)/RL = (0.81V)/1K= 0.81mA current gain = 0.81mA/ 2.0 A = 405 Input power = (Vi) (Vi)/Rin = 1 x 1/500K = 2.0 W output power = (Vout) (Vout)/RL = (0.81V) (0.81V)/1K= 656 W power gain = 656 W/2 W = 329 ECE Electronics - Dr. S. Kozaitis- 90
91 BJT Output Characteristics Plot Ic vs. Vce for multiple values of Vce and Ib From Analysis menu use DC Sweep Use Nested sweep in DC Sweep section ECE Electronics - Dr. S. Kozaitis- 91
92 Probe: BJT Output Characteristics 2 Add plot (plot menu) -> Add trace (trace menu) -> IC(Q1) 1 Result of probe 3 Delete plot (plot menu) ECE Electronics - Dr. S. Kozaitis- 92
93 BJT Output Characteristics: current gain at Vce = 4V, and Ib = 45 A = 8mA/45 A = 178 Ib = 5 A (Each plot 10 A difference) ECE Electronics - Dr. S. Kozaitis- 93
94 BJT Output Characteristics: transistor output resistance Ro = 1/slope At Ib = 45 A, 1/slope = ( )V/( )mA Rout = 9.1K Ib = 5 A (Each plot 10 A difference) ECE Electronics - Dr. S. Kozaitis- 94
95 CE Amplifier: Measurements with Spice Rin Rout ECE Electronics - Dr. S. Kozaitis- 95
96 Input Resistance Measurement Using SPICE Replace source, Vs and Rs with Vin, measure Rin = Vin/Iin Do not change DC problem: keep capacitive coupling if present Source (Vin) should be a high enough frequency so that capacitors act as shorts: Rcap = 1/ C. For C = 100 F, KHz, Rcap = 1/2 (1K)(100E-6) 1.6 Vin should have a small value so operating point does not change Vin 1mV ECE Electronics - Dr. S. Kozaitis- 96
97 Rin Measurement Transient analysis ECE Electronics - Dr. S. Kozaitis- 97
98 Probe results I(C2) Rin = 1mV/204nA = 4.9K ECE Electronics - Dr. S. Kozaitis- 98
99 Output Resistance Measurement Using SPICE Replace load, RL with Vin, measure Rin = Vin/Iin Set Vs = 0 Do not change DC problem: keep capacitive coupling if present Source (Vin) should be a high enough frequency so that capacitors act as shorts: Rcap = 1/ C. For C = 100 F, KHz, Rcap = 1/2 (1K)(100E-6) 1.6 Vin should have a small value so operating point does not change Vin 1mV ECE Electronics - Dr. S. Kozaitis- 99
100 Rout Measurement Transient analysis ECE Electronics - Dr. S. Kozaitis- 100
101 Probe results -I(C1) Rout = 1mV/111nA = 9K -I(C1) is current in Vin flowing out of + terminal ECE Electronics - Dr. S. Kozaitis- 101
102 DC Power measurements Power delivered by + 10 sources: (10)(872 A) + (10)(877 A) = 8.72mW mW = 17.4mW ECE Electronics - Dr. S. Kozaitis- 102
103 ac Power Measurements of Load average power instantaneous power Vout Vin ECE Electronics - Dr. S. Kozaitis- 103
Electronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 4 0 Bipolar Junction Transistors (BJT) Small Signal Analysis Graphical Analysis / Biasing Amplifier, Switch and Logic
Lab 4. Transistor as an amplifier, part 2
Lab 4 Transistor as an amplifier, part 2 INTRODUCTION We continue the bi-polar transistor experiments begun in the preceding experiment. In the common emitter amplifier experiment, you will learn techniques
The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB
The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB Experiment # 6 (Part I) Bipolar Junction Transistors Common Emitter
UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press
UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth
Fundamentals of Microelectronics. Bipolar Amplifier
Bipolar Amplifier Voltage Amplifier Performance Metrics - There are many metrics that are used to evaluate how good an amplifier is (1) (Voltage) Gain= Vout/ Vin. Can be found from small-signal 10 8 6
I C I E =I B = I C 1 V BE 0.7 V
Guide to NPN Amplifier Analysis Jason Woytowich 1. Transistor characteristics A BJT has three operating modes cutoff, active, and saturation. For applications, like amplifiers, where linear characteristics
ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model
Faculty of Engineering ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Agenda I & V Notations BJT Devices & Symbols BJT Large Signal Model 2 I, V Notations (1) It is critical to understand
Figure1: Basic BJT construction.
Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).
Analog and Telecommunication Electronics
Politecnico di Torino - ICT School Analog and Telecommunication Electronics A3 BJT Amplifiers»Biasing» Output dynamic range» Small signal analysis» Voltage gain» Frequency response 12/03/2012-1 ATLCE -
Chapter 5 Transistor Bias Circuits
Chapter 5 Transistor Bias Circuits Objectives Discuss the concept of dc biasing of a transistor for linear operation Analyze voltage-divider bias, base bias, and collector-feedback bias circuits. Basic
Module-1 BJT AC Analysis: The re Transistor Model. Common-Base Configuration
Module-1 BJT AC Analysis: BJT AC Analysis: BJT AC Analysis: BJT Transistor Modeling, The re transistor model, Common emitter fixed bias, Voltage divider bias, Emitter follower configuration. Darlington
Analog Circuits Prof. Jayanta Mukherjee Department of Electrical Engineering Indian Institute of Technology - Bombay
Analog Circuits Prof. Jayanta Mukherjee Department of Electrical Engineering Indian Institute of Technology - Bombay Week - 08 Module - 04 BJT DC Circuits Hello, welcome to another module of this course
ClassABampDesign. Do not design for an edge. Class B push pull stage. Vdd = - Vee. For Vin < Vbe (Ri + Rin2) / Rin2
ClassABampDesign Richard Cooper October 17 2016 When the input signal is positive, the NPN transistor Q1 turns ON, the PNP transistor Q2 is OFF, and the output voltage is positive. The NPN transistor (emitter
By: Dr. Ahmed ElShafee
Lecture (04) Transistor Bias Circuit 3 BJT Amplifiers 1 By: Dr. Ahmed ElShafee ١ Emitter Feedback Bias If an emitter resistor is added to the base bias circuit in Figure, the result is emitter feedback
5.25Chapter V Problem Set
5.25Chapter V Problem Set P5.1 Analyze the circuits in Fig. P5.1 and determine the base, collector, and emitter currents of the BJTs as well as the voltages at the base, collector, and emitter terminals.
EXPERIMENT 10: SINGLE-TRANSISTOR AMPLIFIERS 10/27/17
EXPERIMENT 10: SINGLE-TRANSISTOR AMPLIFIERS 10/27/17 In this experiment we will measure the characteristics of the standard common emitter amplifier. We will use the 2N3904 npn transistor. If you have
Lecture (01) Transistor operating point & DC Load line
Lecture (01) Transistor operating point & DC Load line By: Dr. Ahmed ElShafee ١ BJT Characteristic Collector Characteristic Curves B C E ٢ BJT modes of operation Conditions in Cutoff Conditions in Saturation
UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering
UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering EXPERIMENT 7 BJT AMPLIFIER CONFIGURATIONS AND INPUT/OUTPUT IMPEDANCE OBJECTIVES The purpose of this experiment
ECE 3274 Common-Emitter Amplifier Project
ECE 3274 Common-Emitter Amplifier Project 1. Objective The objective of this lab is to design and build the common-emitter amplifier with partial bypass of the emitter resistor to control the AC voltage
Physics of Bipolar Transistor
Physics of Bipolar Transistor Motivations - In many electronic applications, amplifier is the most fundamental building block. Ex Audio amplifier: amplifies electric signal to drive a speaker RF Power
ECE 3274 Common-Collector (Emitter-Follower) Amplifier Project
ECE 3274 Common-Collector (Emitter-Follower) Amplifier Project 1. Objective This project will show the biasing, gain, frequency response, and impedance properties of a common collector amplifier. 2. Components
By: Dr. Ahmed ElShafee
Lecture (02) Transistor operating point & DC Load line (2), Transistor Bias Circuit 1 By: Dr. Ahmed ElShafee ١ DC Load Line The dc operation can be described graphically using a dc load line. This is a
UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A
UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A 1. Why do we choose Q point at the center of the load line? 2. Name the two techniques used in the stability of the q point.explain. 3. Give the expression
Page 1. Telecommunication Electronics ETLCE - A2 06/09/ DDC 1. Politecnico di Torino ICT School. Amplifiers
Politecnico di Torino ICT School Amplifiers Telecommunication Electronics A2 Transistor amplifiers» Bias point and circuits,» Small signal models» Gain and bandwidth» Limits of linear analysis Op Amp amplifiers
ELG 2135 ELECTRONICS I FOURTH CHAPTER : BIPOLAR JUNCTION TRANSISTORS
ELG 2135 ELECTRONICS I FOURTH CHAPTER : BIPOLAR JUNCTION TRANSISTORS Session WINTER 2003 Dr M. YAGOUB Fourth Chapter: Bipolar Junction Transistors IV - 2 _ Haing studied the junction diode, which is the
Linear electronic. Lecture No. 1
1 Lecture No. 1 2 3 4 5 Lecture No. 2 6 7 8 9 10 11 Lecture No. 3 12 13 14 Lecture No. 4 Example: find Frequency response analysis for the circuit shown in figure below. Where R S =4kR B1 =8kR B2 =4k R
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013)
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I (Regulations 2013 UNIT-1 Part A 1. What is a Q-point? [N/D 16] The operating point also known as quiescent
Early Effect & BJT Biasing
Early Effect & BJT Biasing Early Effect DC BJT Behavior DC Biasing the BJT 1 ESE319 Introduction to Microelectronics Early Effect Saturation region Forward-Active region 4 3 Ideal NPN BJT Transfer V Characteristic
Electronic Circuits - Tutorial 07 BJT transistor 1
Electronic Circuits - Tutorial 07 BJT transistor 1-1 / 20 - T & F # Question 1 A bipolar junction transistor has three terminals. T 2 For operation in the linear or active region, the base-emitter junction
BJT Circuits (MCQs of Moderate Complexity)
BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r
Chapter Three " BJT Small-Signal Analysis "
Chapter Three " BJT Small-Signal Analysis " We now begin to examine the small-signal ac response of the BJT amplifier by reviewing the models most frequently used to represent the transistor in the sinusoidal
After the initial bend, the curves approximate a straight line. The slope or gradient of each line represents the output impedance, for a particular
BJT Biasing A bipolar junction transistor, (BJT) is very versatile. It can be used in many ways, as an amplifier, a switch or an oscillator and many other uses too. Before an input signal is applied its
ATLCE - A3 01/03/2016. Analog and Telecommunication Electronics 2016 DDC 1. Politecnico di Torino - ICT School. Lesson A3: BJT Amplifiers
Politecnico di Torino - ICT School Analog and Telecommunication Electronics A3 BJT Amplifiers»Biasing» Output dynamic range» Small signal analysis» ltage gain» Frequency response AY 2015-16 Biasing Output
Lecture (09) Bipolar Junction Transistor 3
Lecture (09) Bipolar Junction Transistor 3 By: Dr. Ahmed ElShafee ١ I THE BJT AS AN AMPLIFIER Amplification is the process of linearly increasing the amplitude of an electrical signal and is one of the
ECEN 325 Lab 7: Characterization and DC Biasing of the BJT
ECEN 325 Lab 7: Characterization and DC Biasing of the BJT 1 Objectives The purpose of this lab is to characterize NPN and PNP bipolar junction transistors (BJT), and to analyze and design DC biasing circuits
Transistor Biasing and Operational amplifier fundamentals. OP-amp Fundamentals and its DC characteristics. BJT biasing schemes
Lab 1 Transistor Biasing and Operational amplifier fundamentals Experiment 1.1 Experiment 1.2 BJT biasing OP-amp Fundamentals and its DC characteristics BJT biasing schemes 1.1 Objective 1. To sketch potential
ELECTRONIC DEVICES AND CIRCUITS LABORATORY MANUAL FOR II / IV B.E (EEE): I - SEMESTER
ELECTRONIC DEVICES AND CIRCUITS LABORATORY MANUAL FOR II / IV B.E (EEE): I - SEMESTER DEPT. OF ELECTRICAL AND ELECTRONICS ENGINEERING SIR C.R.REDDY COLLEGE OF ENGINEERING ELURU 534 007 ELECTRONIC DEVICES
Objective: To study and verify the functionality of a) PN junction diode in forward bias. Sl.No. Name Quantity Name Quantity 1 Diode
Experiment No: 1 Diode Characteristics Objective: To study and verify the functionality of a) PN junction diode in forward bias Components/ Equipments Required: b) Point-Contact diode in reverse bias Components
Emitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward
SEMICONDUCTOR PHYSICS-2 [Transistor, constructional characteristics, biasing of transistors, transistor configuration, transistor as an amplifier, transistor as a switch, transistor as an oscillator] Transistor
.dc Vcc Ib 0 50uA 5uA
EE 2274 BJT Biasing PreLab: 1. Common Emitter (CE) Transistor Characteristics curve Generate the characteristics curves for a 2N3904 in LTspice by plotting Ic by sweeping Vce over a set of Ib steps. Label
Solid State Devices & Circuits. 18. Advanced Techniques
ECE 442 Solid State Devices & Circuits 18. Advanced Techniques Jose E. Schutt-Aine Electrical l&c Computer Engineering i University of Illinois jschutt@emlab.uiuc.edu 1 Darlington Configuration - Popular
The shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect
Diode as Clamper A clamping circuit is used to place either the positive or negative peak of a signal at a desired level. The dc component is simply added or subtracted to/from the input signal. The clamper
The Common Emitter Amplifier Circuit
The Common Emitter Amplifier Circuit In the Bipolar Transistor tutorial, we saw that the most common circuit configuration for an NPN transistor is that of the Common Emitter Amplifier circuit and that
Lecture 18: Common Emitter Amplifier.
Whites, EE 320 Lecture 18 Page 1 of 8 Lecture 18: Common Emitter Amplifier. We will now begin the analysis of the three basic types of linear BJT small-signal amplifiers: 1. Common emitter (CE) 2. Common
Lab 3: BJT Digital Switch
Lab 3: BJT Digital Switch Objectives The purpose of this lab is to acquaint you with the basic operation of bipolar junction transistor (BJT) and to demonstrate its functionality in digital switching circuits.
ECE 3274 Common-Emitter Amplifier Project
ECE 3274 Common-Emitter Amplifier Project 1. Objective The objective of this lab is to design and build three variations of the common- emitter amplifier. 2. Components Qty Device 1 2N2222 BJT Transistor
Alternate Class AB Amplifier Design
L - Alternate Class AB Amplifier Design.., This Class AB amplifier (Figure 1) has an integral common emitter bipolar amplifier (see Q4). The CE amplifier replaces the bipolar main amplifier in the previous
L - Alternate Class AB Amplifier Design.., This Class AB amplifier (Figure 1) has an integral common emitter bipolar amplifier (see Q4). The CE amplifier replaces the bipolar main amplifier in the previous
Part ILectures Bipolar Junction Transistors(BJTs) and Circuits
University of missan Electronic II, Second year 2015-2016 Part ILectures Bipolar Junction Transistors(BJTs) and Circuits Assistant Lecture: 1 Bipolar Junction Transistors (BJTs) Bipolar Junction Transistors
Lecture (04) BJT Amplifiers 1
Lecture (04) BJT Amplifiers 1 By: Dr. Ahmed ElShafee ١ The Linear Amplifier A linear amplifier provides amplification of a signal without any distortion so that the output signal A voltage divider biased
Bipolar Junction Transistors
Bipolar Junction Transistors Invented in 1948 at Bell Telephone laboratories Bipolar junction transistor (BJT) - one of the major three terminal devices Three terminal devices more useful than two terminal
d. Why do circuit designers like to use feedback when they make amplifiers? Give at least two reasons.
EECS105 Final 5/12/10 Name SID 1 /20 2 /30 3 /20 4 /20 5 /30 6 /40 7 /20 8 /20 Total 1. Give a short answer to each question a. Your friend from Stanford says that he has designed a three-stage high gain
BJT Fundamentals and Applications JOR
Purpose: BJT Fundamentals and Applications JOR The purpose of this assignment is to design a Pulse Amplifier and a Common-Emitter Amplifier with voltage divider bias using a 2N2222A NPN bipolar junction
CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN
CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN Hanoi, 9/24/2012 Contents 2 Structure and operation of BJT Different configurations of BJT Characteristic curves DC biasing method and analysis
Electronics II Lecture 2(a): Bipolar Junction Transistors
Lecture 2(a): Bipolar Junction Transistors A/Lectr. Khalid Shakir Dept. Of Engineering Engineering by Pearson Transistor! Transistor=Transfer+Resistor. When Transistor operates in active region its input
UNIT II MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS
UNIT II MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS CE, CB and CC amplifiers. Method of drawing small-signal equivalent circuit. Midband analysis of various types of single stage amplifiers to obtain gain,
Chapter Two "Bipolar Transistor Circuits"
Chapter Two "Bipolar Transistor Circuits" 1.TRANSISTOR CONSTRUCTION:- The transistor is a three-layer semiconductor device consisting of either two n- and one p-type layers of material or two p- and one
PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS
PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS Due Date (NOTE CHANGE): Thursday, Nov 12 th @ 5 pm; Late penalty in effect! Most active electronic devices are based on the transistor as the fundamental
7. Bipolar Junction Transistor
41 7. Bipolar Junction Transistor 7.1. Objectives - To experimentally examine the principles of operation of bipolar junction transistor (BJT); - To measure basic characteristics of n-p-n silicon transistor
Chapter 4 Bipolar Junction Transistors (BJTs)
Chapter 4 Bipolar Junction Transistors (BJTs) Introduction http://engr.calvin.edu/pribeiro_webpage/courses/engr311/311_frames.html Physical Structure and Modes of Operation A simplified structure of the
Lab 2: Discrete BJT Op-Amps (Part I)
Lab 2: Discrete BJT Op-Amps (Part I) This is a three-week laboratory. You are required to write only one lab report for all parts of this experiment. 1.0. INTRODUCTION In this lab, we will introduce and
ECE 310 Microelectronics Circuits
ECE 310 Microelectronics Circuits Bipolar Transistors Dr. Vishal Saxena (vishalsaxena@boisetstate.edu) Jan 20, 2014 Vishal Saxena 1 Bipolar Transistor n the chapter, we will study the physics of bipolar
Improving Amplifier Voltage Gain
15.1 Multistage ac-coupled Amplifiers 1077 TABLE 15.3 Three-Stage Amplifier Summary HAND ANALYSIS SPICE RESULTS Voltage gain 998 1010 Input signal range 92.7 V Input resistance 1 M 1M Output resistance
Unit WorkBook 4 Level 4 ENG U19 Electrical and Electronic Principles LO4 Digital & Analogue Electronics 2018 Unicourse Ltd. All Rights Reserved.
Pearson BTEC Levels 4 Higher Nationals in Engineering (RQF) Unit 19: Electrical and Electronic Principles Unit Workbook 4 in a series of 4 for this unit Learning Outcome 4 Digital & Analogue Electronics
REVIEW TRANSISTOR BIAS CIRCUIT
EVIEW TANSISTO BIAS CICUIT OBJECTIVES Discuss the concept of dc biasing of a transistor for linear operation Analyze voltage-divider bias, base bias, and collectorfeedback bias circuits. Basic troubleshooting
SMALL SINGLE LOW FREQUENCY TRANSISTOR AMPLIFIERS
UNIT VI SMALL SINGLE LOW FREQUENCY TRANSISTOR 6.1 Introduction AMPLIFIERS V-I characteristics of an active device such as BJT are non-linear. The analysis of a non- linear device is complex. Thus to simplify
Bipolar junction transistors.
Bipolar junction transistors. Third Semester Course code : 15EECC202 Analog electronic circuits (AEC) Team: Dr. Nalini C Iyer, R.V. Hangal, Sujata N, Prashant A, Sneha Meti AEC Team, Faculty, School of
Bipolar Junction Transistors (BJTs) Overview
1 Bipolar Junction Transistors (BJTs) Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s Institute of Technology
Lecture 19: Available Power. Distortion. Emitter Degeneration. Miller Effect.
Whites, EE 322 Lecture 19 Page 1 of 11 Lecture 19: Available Power. Distortion. Emitter Degeneration. Miller Effect. While the efficiency of an amplifier, as discussed in the previous lecture, is an important
Page 1 of 7. Power_AmpFal17 11/7/ :14
ECE 3274 Power Amplifier Project (Push Pull) Richard Cooper 1. Objective This project will introduce two common power amplifier topologies, and also illustrate the difference between a Class-B and a Class-AB
Analog Electronic Circuits Lab-manual
2014 Analog Electronic Circuits Lab-manual Prof. Dr Tahir Izhar University of Engineering & Technology LAHORE 1/09/2014 Contents Experiment-1:...4 Learning to use the multimeter for checking and indentifying
Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook)
Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook) Recapitulation and Equivalent Circuit Models Previous slides present first order BJT model. Assumes npn transistor in active mode. Basic relationship
DC Bias. Graphical Analysis. Script
Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 3 Lecture Title: Analog Circuits
GATE SOLVED PAPER - IN
YEAR 202 ONE MARK Q. The i-v characteristics of the diode in the circuit given below are : v -. A v 0.7 V i 500 07 $ = * 0 A, v < 0.7 V The current in the circuit is (A) 0 ma (C) 6.67 ma (B) 9.3 ma (D)
dc Bias Point Calculations
dc Bias Point Calculations Find all of the node voltages assuming infinite current gains 9V 9V 10kΩ 9V 100kΩ 1kΩ β = 270kΩ 10kΩ β = 1kΩ 1 dc Bias Point Calculations Find all of the node voltages assuming
Bipolar Junction Transistors (BJTs)
C H A P T E R 6 Bipolar Junction Transistors (BJTs) Figure 6.1 A simplified structure of the npn transistor and pnp transistor. Table 6.1: BJT modes of Operation Mode Cutoff Active Saturation EBJ Reverse
ECE 442 Solid State Devices & Circuits. 15. Differential Amplifiers
ECE 442 Solid State Devices & Circuits 15. Differential Amplifiers Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois jschutt@emlab.uiuc.edu ECE 442 Jose Schutt Aine 1 Background
Frequency Response of Common Emitter Amplifier
Başkent University Department of Electrical and Electronics Engineering EEM 311 Electronics II Experiment 6 Frequency Response of Common Emitter Amplifier Aim: The aim of this experiment is to study the
UNIT - 1 OPERATIONAL AMPLIFIER FUNDAMENTALS
UNIT - 1 OPERATIONAL AMPLIFIER FUNDAMENTALS 1.1 Basic operational amplifier circuit- hte basic circuit of an operational amplifier is as shown in above fig. has a differential amplifier input stage and
Two Stage Amplifier Design
Two Stage Amplifier Design ENGI 242 ELEC 222 HYBRID MODEL PI January 2004 ENGI 242/ELEC 222 2 Multistage Amplifier Design 1 HYBRID MODEL PI PARAMETERS Parasitic Resistances rb = rb b = ohmic resistance
Electrical, Electronic and Digital Principles (EEDP) Lecture 3. Other BJT Biasing Techniques باسم ممدوح الحلوانى
Electrical, Electronic and Digital Principles (EEDP) Lecture 3 Other BJT Biasing Techniques د. باسم ممدوح الحلوانى Approximate Analysis Voltage-divider Bias Exact Analysis Ri = is the equivalent resistance
EXPERIMENT NO -9 TRANSITOR COMMON -BASE CONFIGURATION CHARACTERISTICS
Contents EXPERIMENT NO -9 TRANSITOR COMMON -BASE CONFIGURATION CHARACTERISTICS... 3 EXPERIMENT NO -10. FET CHARACTERISTICS... 8 Experiment # 11 Non-inverting amplifier... 13 Experiment #11(B) Inverting
When you have completed this exercise, you will be able to determine the ac operating characteristics of
When you have completed this exercise, you will be able to determine the ac operating characteristics of multimeter and an oscilloscope. A sine wave generator connected between the transistor and ground
Experiment 8&9 BJT AMPLIFIER
Experiment 8&9 BJT AMPLIFIER 1 BJT AS AMPLIFIER 1. Objectiv e: 1- To demonstrate the operation and characteristics of small signals common emitter amplifiers. 2- What do we mean by a linear amplifier and
Amplifier Frequency Response, Feedback, Oscillations; Op-Amp Block Diagram and Gain-Bandwidth Product
Amplifier Frequency Response, Feedback, Oscillations; Op-Amp Block Diagram and Gain-Bandwidth Product Physics116A,12/4/06 Draft Rev. 1, 12/12/06 D. Pellett 2 Negative Feedback and Voltage Amplifier AB
AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014
Q.2 a. State and explain the Reciprocity Theorem and Thevenins Theorem. a. Reciprocity Theorem: If we consider two loops A and B of network N and if an ideal voltage source E in loop A produces current
ESE 319 MT Review
ESE 319 MT1 2010 Review 1)--> Physical operation of a BJT (layout, why currents are related, npn vs. pnp). 2)Cover the Eber's Mole Model for forward and reverse active configurations. (large signal model)
(a) BJT-OPERATING MODES & CONFIGURATIONS
(a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base
ELEC 2210 EXPERIMENT 7 The Bipolar Junction Transistor (BJT)
ELEC 2210 EXPERIMENT 7 The Bipolar Junction Transistor (BJT) Objectives: The experiments in this laboratory exercise will provide an introduction to the BJT. You will use the Bit Bucket breadboarding system
ECE321 Electronics I Fall 2006
ECE321 Electronics I Fall 2006 Professor James E. Morris Lecture 11 31 st October, 2006 Bipolar Junction Transistors (BJTs) 5.1 Device Structure & Physics 5.2 I-V Characteristics Convert 5.1 information
In a cascade configuration, the overall voltage and current gains are given by:
ECE 3274 Two-Stage Amplifier Project 1. Objective The objective of this lab is to design and build a direct coupled two-stage amplifier, including a common-source gain stage and a common-collector buffer
A 3-STAGE 5W AUDIO AMPLIFIER
ECE 2201 PRELAB 7x BJT APPLICATIONS A 3-STAGE 5W AUDIO AMPLIFIER UTILIZING NEGATIVE FEEDBACK INTRODUCTION Figure P7-1 shows a simplified schematic of a 3-stage audio amplifier utilizing three BJT amplifier
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS Most of the content is from the textbook: Electronic devices and circuit theory,
The Bipolar Junction Transistor- Small Signal Characteristics
The Bipolar Junction Transistor- Small Signal Characteristics Debapratim Ghosh deba21pratim@gmail.com Electronic Systems Group Department of Electrical Engineering Indian Institute of Technology Bombay
Shankersinh Vaghela Bapu Institute of Technology INDEX
Shankersinh Vaghela Bapu Institute of Technology Diploma EE Semester III 3330905: ELECTRONIC COMPONENTS AND CIRCUITS INDEX Sr. No. Title Page Date Sign Grade 1 Obtain I-V characteristic of Diode. 2 To
Communication Microelectronics (W17)
Communication Microelectronics (W17) Lecture 4: Bipolar Junction Transistor Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Bipolar Junction Transistor (BJT) Physical Structure and I-V
Revised: January 26,
ECE 3274 Active Load Common Emitter Amplifier Project 1. Objective This project will show how the use of an active load in a common emitter amplifier can affect the gain open loop gain. 2. Components Qty
Experiment #6: Biasing an NPN BJT Introduction to CE, CC, and CB Amplifiers
SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Experiment #6: Biasing an NPN BJT Introduction to CE, CC, and CB
Bipolar Junction Transistor (BJT) Basics- GATE Problems
Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BV CEO and that with emitter open is BV CBO, then (a) BV CEO =
BJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited