ATLCE - A3 01/03/2016. Analog and Telecommunication Electronics 2016 DDC 1. Politecnico di Torino - ICT School. Lesson A3: BJT Amplifiers

Size: px
Start display at page:

Download "ATLCE - A3 01/03/2016. Analog and Telecommunication Electronics 2016 DDC 1. Politecnico di Torino - ICT School. Lesson A3: BJT Amplifiers"

Transcription

1 Politecnico di Torino - ICT School Analog and Telecommunication Electronics A3 BJT Amplifiers»Biasing» Output dynamic range» Small signal analysis» ltage gain» Frequency response AY Biasing Output dynamic range Small signal analysis ltage gain Frequency response Lesson A3: BJT Amplifiers Amplifier design Set operating point and use of small signal model Lab experiment 1: small signal measurements References: D. Del Corso: Transistor circuits, sect. 1.1, 1.2 Any texbook on Transistor Amplifiers 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC What matters in an amplifier Gain Bandwidth Linearity (no distorsion) Noise (low) There is always some nonlinearity Reduce, counteract» Negative feedback, tuned circuits, Exploit to build» VGA/dynamic compressor»mixers» Oscillators Amplifiers or. Small signal MOS, MOS-FET, BJT Same linear model (gm or hybrid) Transistor models Large signal: same method, different models BJT: exponential large signal model (rather simple) MOS: lin/log/quad large signal model (complex!) analytic model for BJT heuristic models for MOS Similar effects Similar countermeasures 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC Building the BJT amplifier Final BJT amplifier CE circuit Basic bias circuit Ic depends on current gain Wide changes in current gain Collector feedback bias to Vc Less dependent on current gain Final bias circuit Stable Ic» Versus current gain (emitter feedback)» Versus temperature (Vb >> Vbe) Gain related with bias Emitter feedback bias Ic depends on temperature (Vbe) Re Independent bias / gain Different AC / DC paths Same approach for CC, CB Ce 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC 2016 DDC 1

2 BJT reference circuit Amplifier features and analysis Common Emitter circuit Bias (DC) AC amplifier: BJT Common Emitter circuit Input and output AC coupling:, C2 Add Gain control with feedback v O Z L Emitter feedback DC: stabilize the bias point ( + ) AC control the gain ( only) Bandwidth (BW) control»hf: C feedback and to GND»LF: coupling C R E1 R E2 Analysis or design: Select or identify the configuration Set or evaluate the Bias point AC passband gain (linear model) Cutoff frequency (frequency response) Nonlinear model analysis next section 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC Analysis of BJT circuit: step 1 Analysis of BJT circuit: step 2 CE amplifier with bipolar transistor (BJT) Find bias point: (I C, V CE ) CE amplifier with bipolar transistor (BJT) Find bias point: (I C, V CE ) The bias point must be in the active region: V CE > 0,2 V I C The bias point must be in the active region: V CE > 0,2 V I C hie, hfe V CE Compute small signal parameteres for the bias point: V CE hie, hfe, gm... 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC BJT (simplified) models Bias point analysis Simplified model for bias point analysis (to verify operation in active area) Simplified model for small signal analysis, CE configuration. Parameters h fe i B or g m v BE h ie = V T * h fe /I C g m = I C /V T B v BE B I B I B E g m v BE E C C DC bias point Small signal parameters depend on I C and (to a lesser extent) on V CE solve bias point first I C I E is fixed by Base-Emitter mesh V CE is related with Collector-Emitter mesh Step 1: compute I C Equation on BE mesh First approximation: I B = 0 (h FE ) Step 2: check V CE value; Equation on CE mesh if > 0,2 V active area 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC 2016 DDC 2

3 BE net BE mesh Ic depends from these devices Ic depends only from Base-Emitter mesh,, are mapped to a unique mesh, with equivalent Thevenin parameters BE equivalent circuit (h FE = β) V BB V BB, R B 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC CE net Design choices Vce depends from devices in the CE mesh Vce depends from Ic and devices at the Collector node Vce = -Ic-IeRe Vce If h fe is large, I B = (V BB V B )/R B V B = V E + V BE βi B R E + V BE Design variables (for a given Ic) V BB, R B /V B Large V BB Good stability vs ΔV BE (mainly due to temperature) Reduced output dynamic range (lower V CEmax ) V B V BE V E Small R B Good stability vs Δβ (mainly due to parameters spreading) High power consumption (R B = R 1 //R 2 ) 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC Example A3-e1: bias, small sig. param. Results (example A3-e1) hfe 120 k 82 k k 10 k 12 V 100 (50 300) I1 C3 Ie 120 k 82 k k 10 k 12 V hfe 100 I1 C3 Ie Vbb = Rb = Ce Vbb = 12 * 82 / 202 = 4,9 V Rb = 48,7 k Ce Ie = Vce = hie = gm = Ie = 4,3 / (12, ,7/100) = 0,335 ma Vce = 4,35 V hie = 7,76 k gm = 12,88 ma/v 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC 2016 DDC 3

4 Lesson A3: BJT Amplifiers BJT circuit: small signal analysis Transistor amplifiers Basic CE circuit Biasing Output dynamic range Small signal analysis ltage gain Frequency response Design of amplifiers Specifications Set operating point Use of small signal model Lab experiment 1: small signal measurements Parts related with in-band gain: From slide A3-7: C3 open,, C2, Ce shorted) Reminder: In signal analysis = 0, are connected as parallel resistances to 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC Gain analysis equivalent circuit Results with linear model Compute the gain using the linear model i B v I i h fe i C B Gain with linear model (h fe +1) v I // h ie Z E Z C v O If hfe >> 1 hie becomes negligible with respect to Z E (hfe+1) If Ze = 0 Max gain v O = - i C Z C ; i C = i B h fe ; v i = i B h ie + i B (1+h fe ) Z E Av = - (Zc hfe)/hie = V T h fe /I C Depends on device parameters (h fe ) 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC Example A3-e2 : gain with linear model Results (example A3-e2) hie = 8,96k hfe = 100 g m = 12,9 ma/v 10 k k Vbe // Total load on the Collector: // hie g m Vbe hie = 8,96k hfe = 100 Ib hfe Ib g m = 12,9 ma/v hie 10 k // k Total load on the Collector: // Av = - (12k//10k)*100 / (8,96k + 330*100) = -13 Av = - Evaluate gain change for hfe Compare with Re = 0 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC 2016 DDC 4

5 Example A3-e3: Ri and Ro Frequency response hie = 8,96k hfe = 100 g m = 12,9 ma/v Ri =? Ro =? 12 k k // Ib hie hfe Ib Wideband AC amplifier Emitter/source feedback» stabilize DC bias point and in-band AC gain A V Z C /Z E Lower band limit: interstage series coupling capacitance Z E frequency behaviour transformer coupling (if any) Higher band limit parallel capacitors towards ground» designed capacitors» wiring parasitic» active device parasitic 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC Wideband AC amplifier High Frequency: L and C parasitics V u /V i (db) Band pass Minimum required (specs) Low cutoff frequency (, C2, Ce) Actual (tolerances) f (Hz) High cutoff frequency (C3, Cp1, Cp2) Output Capacitance (load) insert isolation stage (Common Collector/Drain) PCB parasitic L and C Use SMD devices Careful PCB design Active device parasitic (C BC ) multiplied by Miller effect use HF devices with low C BC (GaAs, SiGe,..) proper circuit configuration (Common Base, cascode) 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC Parasitic capacitances Miller effect Cp1 C3 C2 C4 Cp1: Base-Collector parasitic (Cbc) C3: designed to set high cutoff frequency Ie Cp2 Parasitic Base-Collector capacitance (C BC ) is connected between two nodes with inverting gain A Corrent I cond flowing in C BC : I cond = jωc BC (V B V C ) = jωc BC (V B +AV B ) = jωc BC (A+1) V B (multiplied by Miller effect) Admittance multiplied by (gain +1) Actual equivalent capacitance at Base node: C actual = C BC * (A+1) This capacitance limits the high frequency response Need for Miller free circuit configurations 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC 2016 DDC 5

6 Other circuit configurations: CC Other circuit configurations: CB Common Collector / Common Drain high Zi low Zo No Miller effect (Av 1) Current gain Good for Load separation Increasing Zi Lowering Zo Va Re Common Base / Common Gate low Zi, high Zo C BC connected to GND no Miller effect ltage gain Av gm Current gain Ai 1 Q2 Av 1 Combined with CE in the cascode stage 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC Cascode amplifier Cascode amplifier Only basic circuit, no bias network Va : CE stage, Low Zc low V gain Good current gain - Low ΔVce - Low Miller effect Va Vu Q2: CB stage Good voltage gain - No Miller effect Common Base: Ie ltage gain Va Q2 Common Emitter: Ic Current gain Common Base stage (CB) C BC parasitic towards ground no Miller effect (C multiplier) provides voltage gain Common Emitter output to low-z load small voltage dynamic provides current gain minimum effect of C BC parasitic capacitance Overall result higher gain at high frequency 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC Transistor amplifiers Basic CE circuit Biasing Output dynamic range Small signal analysis ltage gain Frequency response Lesson A3: BJT Amplifiers Design of amplifiers Specifications Set operating point Use of small signal model Lab experiment 1: small signal measurements Design an amplifier from the provided specs A real design:» Multiple solutions» Some specs are implicit» Devices have poorly defined parameters Simulate, build, measure Homework: design, simulation In the lab: build, measure, debug Compare specs/simulation/measurements Linear model lab 1 Nonlinear model lab 2 Lab 1 and lab 2 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC 2016 DDC 6

7 Amplifier design specs (2016) Single-Transistor Amplifier with: ltage gain Vu/ = 20 (nominal) Bandwidth -3 db from 80 Hz to 200 khz (minimum) Output dynamic at least 4 Vpp on 10 kω load (or higher) Supply voltage 12 V (nominal) 2N2222A Transistor (or almost equivalent) All features within +/-10%, at ambient temperature Gain and output dynamic at band centre References: Text: design procedure: Cap 1, 1.P1 Lab procedures: Cap 1, 1.L1 web guides: lab 1 Design sequence Select the circuit: CE with Ze, bias network Vb/Re Choose a no-load dynamic (), or Ve, or Stability/power/dynamic tradeoffs Compute, or no-load dynamic, or Ve Compute Ic Design bias network to get Ic:,, + Compute from gain specs Compute, C2, C3, C4 from frequency gain specs. Evaluate Pdmax (always, even if not requested!) 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC Checks and measurements Theory and practice Passive devices (R and C) available only in normalized values Know what they are (E12, E24, ) Only E12 values available in the lab From computed to normalized values V u /V i (db) Measured values (with errors) Transfer function modified by normalization / tolerances Evaluate effects Component tolerances expand the Bode plot (a line) to a somewhat wide band Specs must lie within the strip Compare measurements with variations of Bode plot Design specification k Design band, taking into account device parameters tolerances f (Hz) 01/03/ ATLCE - A DDC 01/03/ ATLCE - A DDC Lesson A3: final questions Which different types of amplifiers can be found in a radio system? Draw three circuits which can be used to set the operating point of a BJT, discussing respective benefits and drawbacks. Write an approximate expression for Av of a CE amplifier. Which elements limit the bandwidth of amplifiers? Which are the best configurations for high bandwidth amplifiers? List the specifications for an amplifier (what you must know to select an amplifier from a catalogue). Outline the design procedure for a single transistor amplifier. Describe the lab procedures to measure the frequency response of an amplifier. 01/03/ ATLCE - A DDC 2016 DDC 7

Analog and Telecommunication Electronics

Analog and Telecommunication Electronics Politecnico di Torino - ICT School Analog and Telecommunication Electronics A3 BJT Amplifiers»Biasing» Output dynamic range» Small signal analysis» Voltage gain» Frequency response 12/03/2012-1 ATLCE -

More information

Page 1. Telecommunication Electronics ETLCE - A2 06/09/ DDC 1. Politecnico di Torino ICT School. Amplifiers

Page 1. Telecommunication Electronics ETLCE - A2 06/09/ DDC 1. Politecnico di Torino ICT School. Amplifiers Politecnico di Torino ICT School Amplifiers Telecommunication Electronics A2 Transistor amplifiers» Bias point and circuits,» Small signal models» Gain and bandwidth» Limits of linear analysis Op Amp amplifiers

More information

UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A

UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A 1. Why do we choose Q point at the center of the load line? 2. Name the two techniques used in the stability of the q point.explain. 3. Give the expression

More information

BJT Circuits (MCQs of Moderate Complexity)

BJT Circuits (MCQs of Moderate Complexity) BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r

More information

TLCE - A3 08/09/ /09/ TLCE - A DDC. IF channel Zc. - Low noise, wide dynamic Ie Vo 08/09/ TLCE - A DDC

TLCE - A3 08/09/ /09/ TLCE - A DDC. IF channel Zc. - Low noise, wide dynamic Ie Vo 08/09/ TLCE - A DDC Politecnico di Torino ICT School Telecommunication Electronics A3 Amplifiers nonlinearity» Reference circuit» Nonlinear models» Effects of nonlinearity» Applications of nonlinearity Large signal amplifiers

More information

ESE319 Introduction to Microelectronics High Frequency BJT Model & Cascode BJT Amplifier

ESE319 Introduction to Microelectronics High Frequency BJT Model & Cascode BJT Amplifier High Frequency BJT Model & Cascode BJT Amplifier 1 Gain of 10 Amplifier Non-ideal Transistor C in R 1 V CC R 2 v s Gain starts dropping at > 1MHz. Why! Because of internal transistor capacitances that

More information

Pg: 1 VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203 Department of Electronics & Communication Engineering Regulation: 2013 Acadamic Year : 2015 2016 EC6304 Electronic Circuits I Question

More information

Analog and Telecommunication Electronics

Analog and Telecommunication Electronics Politecnico di Torino - ICT School Analog and Telecommunication Electronics F3 - Actuator driving» Driving BJT switches» Driving MOS-FET» SOA and protection» Smart switches 29/06/2011-1 ATLCE - F3-2011

More information

By: Dr. Ahmed ElShafee

By: Dr. Ahmed ElShafee Lecture (04) Transistor Bias Circuit 3 BJT Amplifiers 1 By: Dr. Ahmed ElShafee ١ Emitter Feedback Bias If an emitter resistor is added to the base bias circuit in Figure, the result is emitter feedback

More information

Skyup's Media ELECTRONIC CIRCUIT ANALYSIS

Skyup's Media ELECTRONIC CIRCUIT ANALYSIS ELECTRONIC CIRCUIT ANALYSIS MALLAREDDY COLLEGE OF ENGINEERING AND TECHNOLOGY DEPARTMENT OF ELECTROINICS AND COMMUNICATION ENGINEERING Answer all the following questions: PART A: B.TECH II YEAR II SEMESTER

More information

Last time: BJT CE and CB amplifiers biased by current source

Last time: BJT CE and CB amplifiers biased by current source Last time: BJT CE and CB amplifiers biased by current source Assume FA regime, then VB VC V E I B I E, β 1 I Q C α I, V 0. 7V Calculate V CE and confirm it is > 0.2-0.3V, then BJT can be replaced with

More information

Module-1 BJT AC Analysis: The re Transistor Model. Common-Base Configuration

Module-1 BJT AC Analysis: The re Transistor Model. Common-Base Configuration Module-1 BJT AC Analysis: BJT AC Analysis: BJT AC Analysis: BJT Transistor Modeling, The re transistor model, Common emitter fixed bias, Voltage divider bias, Emitter follower configuration. Darlington

More information

Lab 4. Transistor as an amplifier, part 2

Lab 4. Transistor as an amplifier, part 2 Lab 4 Transistor as an amplifier, part 2 INTRODUCTION We continue the bi-polar transistor experiments begun in the preceding experiment. In the common emitter amplifier experiment, you will learn techniques

More information

Electron Devices and Circuits

Electron Devices and Circuits Electron Devices and Circuits (EC 8353) Prepared by Mr.R.Suresh, AP/EEE Ms.S.KARKUZHALI,A.P/EEE BJT small signal model Analysis of CE, CB, CC amplifiers- Gain and frequency response MOSFET small signal

More information

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB

The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB Experiment # 6 (Part I) Bipolar Junction Transistors Common Emitter

More information

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering EXPERIMENT 7 BJT AMPLIFIER CONFIGURATIONS AND INPUT/OUTPUT IMPEDANCE OBJECTIVES The purpose of this experiment

More information

Small signal ac equivalent circuit of BJT

Small signal ac equivalent circuit of BJT UNIT-2 Part A 1. What is an ac load line? [N/D 16] A dc load line gives the relationship between the q-point and the transistor characteristics. When capacitors are included in a CE transistor circuit,

More information

ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model

ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Faculty of Engineering ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Agenda I & V Notations BJT Devices & Symbols BJT Large Signal Model 2 I, V Notations (1) It is critical to understand

More information

Amplifier Frequency Response, Feedback, Oscillations; Op-Amp Block Diagram and Gain-Bandwidth Product

Amplifier Frequency Response, Feedback, Oscillations; Op-Amp Block Diagram and Gain-Bandwidth Product Amplifier Frequency Response, Feedback, Oscillations; Op-Amp Block Diagram and Gain-Bandwidth Product Physics116A,12/4/06 Draft Rev. 1, 12/12/06 D. Pellett 2 Negative Feedback and Voltage Amplifier AB

More information

Analog and Telecommunication Electronics

Analog and Telecommunication Electronics Politecnico di Torino - ICT School Analog and Telecommunication Electronics F2 Active power devices»mos»bjt» IGBT, TRIAC» Safe Operating Area» Thermal analysis 30/05/2012-1 ATLCE - F2-2011 DDC Lesson F2:

More information

(a) BJT-OPERATING MODES & CONFIGURATIONS

(a) BJT-OPERATING MODES & CONFIGURATIONS (a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base

More information

SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road QUESTION BANK

SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road QUESTION BANK SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK Subject with Code : Electronic Circuit Analysis (16EC407) Year & Sem: II-B.Tech & II-Sem

More information

Midterm 2 Exam. Max: 90 Points

Midterm 2 Exam. Max: 90 Points Midterm 2 Exam Name: Max: 90 Points Question 1 Consider the circuit below. The duty cycle and frequency of the 555 astable is 55% and 5 khz respectively. (a) Determine a value for so that the average current

More information

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth

More information

I C I E =I B = I C 1 V BE 0.7 V

I C I E =I B = I C 1 V BE 0.7 V Guide to NPN Amplifier Analysis Jason Woytowich 1. Transistor characteristics A BJT has three operating modes cutoff, active, and saturation. For applications, like amplifiers, where linear characteristics

More information

Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.

Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect

More information

F7 Transistor Amplifiers

F7 Transistor Amplifiers Lars Ohlsson 2018-09-25 F7 Transistor Amplifiers Outline Transfer characteristics Small signal operation and models Basic configurations Common source (CS) CS/CE w/ source/ emitter degeneration resistance

More information

Experiment 8&9 BJT AMPLIFIER

Experiment 8&9 BJT AMPLIFIER Experiment 8&9 BJT AMPLIFIER 1 BJT AS AMPLIFIER 1. Objectiv e: 1- To demonstrate the operation and characteristics of small signals common emitter amplifiers. 2- What do we mean by a linear amplifier and

More information

UNIVERSITY OF PENNSYLVANIA EE 206

UNIVERSITY OF PENNSYLVANIA EE 206 UNIVERSITY OF PENNSYLVANIA EE 206 TRANSISTOR BIASING CIRCUITS Introduction: One of the most critical considerations in the design of transistor amplifier stages is the ability of the circuit to maintain

More information

Analog Circuits Prof. Jayanta Mukherjee Department of Electrical Engineering Indian Institute of Technology - Bombay

Analog Circuits Prof. Jayanta Mukherjee Department of Electrical Engineering Indian Institute of Technology - Bombay Analog Circuits Prof. Jayanta Mukherjee Department of Electrical Engineering Indian Institute of Technology - Bombay Week - 08 Module - 04 BJT DC Circuits Hello, welcome to another module of this course

More information

Figure1: Basic BJT construction.

Figure1: Basic BJT construction. Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).

More information

5.25Chapter V Problem Set

5.25Chapter V Problem Set 5.25Chapter V Problem Set P5.1 Analyze the circuits in Fig. P5.1 and determine the base, collector, and emitter currents of the BJTs as well as the voltages at the base, collector, and emitter terminals.

More information

Part ILectures Bipolar Junction Transistors(BJTs) and Circuits

Part ILectures Bipolar Junction Transistors(BJTs) and Circuits University of missan Electronic II, Second year 2015-2016 Part ILectures Bipolar Junction Transistors(BJTs) and Circuits Assistant Lecture: 1 Bipolar Junction Transistors (BJTs) Bipolar Junction Transistors

More information

Homework Assignment 12

Homework Assignment 12 Homework Assignment 12 Question 1 Shown the is Bode plot of the magnitude of the gain transfer function of a constant GBP amplifier. By how much will the amplifier delay a sine wave with the following

More information

Lecture 18: Common Emitter Amplifier.

Lecture 18: Common Emitter Amplifier. Whites, EE 320 Lecture 18 Page 1 of 8 Lecture 18: Common Emitter Amplifier. We will now begin the analysis of the three basic types of linear BJT small-signal amplifiers: 1. Common emitter (CE) 2. Common

More information

Chapter Three " BJT Small-Signal Analysis "

Chapter Three  BJT Small-Signal Analysis Chapter Three " BJT Small-Signal Analysis " We now begin to examine the small-signal ac response of the BJT amplifier by reviewing the models most frequently used to represent the transistor in the sinusoidal

More information

EE LINEAR INTEGRATED CIRCUITS & APPLICATIONS

EE LINEAR INTEGRATED CIRCUITS & APPLICATIONS UNITII CHARACTERISTICS OF OPAMP 1. What is an opamp? List its functions. The opamp is a multi terminal device, which internally is quite complex. It is a direct coupled high gain amplifier consisting of

More information

Chap. 4 BJT transistors

Chap. 4 BJT transistors Chap. 4 BJT transistors Widely used in amplifier circuits Formed by junction of 3 materials npn or pnp structure ECE 3111 - Electronics - Dr. S. Kozaitis- 1 ECE 3111 - Electronics - Dr. S. Kozaitis- 2

More information

Early Effect & BJT Biasing

Early Effect & BJT Biasing Early Effect & BJT Biasing Early Effect DC BJT Behavior DC Biasing the BJT 1 ESE319 Introduction to Microelectronics Early Effect Saturation region Forward-Active region 4 3 Ideal NPN BJT Transfer V Characteristic

More information

Lecture #7 BJT and JFET Frequency Response

Lecture #7 BJT and JFET Frequency Response November 2014 Integrated Technical Education Cluster At AlAmeeria J-601-1448 Electronic Principals Lecture #7 BJT and JFET Frequency Response Instructor: Dr. Ahmad El-Banna Agenda Introduction General

More information

Physics of Bipolar Transistor

Physics of Bipolar Transistor Physics of Bipolar Transistor Motivations - In many electronic applications, amplifier is the most fundamental building block. Ex Audio amplifier: amplifies electric signal to drive a speaker RF Power

More information

Experiment 8 Frequency Response

Experiment 8 Frequency Response Experiment 8 Frequency Response W.T. Yeung, R.A. Cortina, and R.T. Howe UC Berkeley EE 105 Spring 2005 1.0 Objective This lab will introduce the student to frequency response of circuits. The student will

More information

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013)

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013) DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I (Regulations 2013 UNIT-1 Part A 1. What is a Q-point? [N/D 16] The operating point also known as quiescent

More information

ESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source

ESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source ESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source Output from Collector Start with bias DC analysis make sure BJT is in FA, then calculate small signal parameters for AC analysis.

More information

Analog Integrated Circuit Configurations

Analog Integrated Circuit Configurations Analog Integrated Circuit Configurations Basic stages: differential pairs, current biasing, mirrors, etc. Approximate analysis for initial design MOSFET and Bipolar circuits Basic Current Bias Sources

More information

UNIT II MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS

UNIT II MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS UNIT II MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS CE, CB and CC amplifiers. Method of drawing small-signal equivalent circuit. Midband analysis of various types of single stage amplifiers to obtain gain,

More information

AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014

AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014 Q.2 a. State and explain the Reciprocity Theorem and Thevenins Theorem. a. Reciprocity Theorem: If we consider two loops A and B of network N and if an ideal voltage source E in loop A produces current

More information

Lab 2: Discrete BJT Op-Amps (Part I)

Lab 2: Discrete BJT Op-Amps (Part I) Lab 2: Discrete BJT Op-Amps (Part I) This is a three-week laboratory. You are required to write only one lab report for all parts of this experiment. 1.0. INTRODUCTION In this lab, we will introduce and

More information

EE 330 Laboratory 8 Discrete Semiconductor Amplifiers

EE 330 Laboratory 8 Discrete Semiconductor Amplifiers EE 330 Laboratory 8 Discrete Semiconductor Amplifiers Fall 2018 Contents Objective:...2 Discussion:...2 Components Needed:...2 Part 1 Voltage Controlled Amplifier...2 Part 2 A Nonlinear Application...3

More information

Mini Project 2 Single Transistor Amplifiers. ELEC 301 University of British Columbia

Mini Project 2 Single Transistor Amplifiers. ELEC 301 University of British Columbia Mini Project 2 Single Transistor Amplifiers ELEC 301 University of British Columbia 44638154 October 27, 2017 Contents 1 Introduction 1 2 Investigation 1 2.1 Part 1.................................................

More information

ELC224 Final Review (12/10/2009) Name:

ELC224 Final Review (12/10/2009) Name: ELC224 Final Review (12/10/2009) Name: Select the correct answer to the problems 1 through 20. 1. A common-emitter amplifier that uses direct coupling is an example of a dc amplifier. 2. The frequency

More information

Code: 9A Answer any FIVE questions All questions carry equal marks *****

Code: 9A Answer any FIVE questions All questions carry equal marks ***** II B. Tech II Semester (R09) Regular & Supplementary Examinations, April/May 2012 ELECTRONIC CIRCUIT ANALYSIS (Common to EIE, E. Con. E & ECE) Time: 3 hours Max Marks: 70 Answer any FIVE questions All

More information

Bipolar Junction Transistor (BJT) Basics- GATE Problems

Bipolar Junction Transistor (BJT) Basics- GATE Problems Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BV CEO and that with emitter open is BV CBO, then (a) BV CEO =

More information

Phy 335, Unit 4 Transistors and transistor circuits (part one)

Phy 335, Unit 4 Transistors and transistor circuits (part one) Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit

More information

Experiments #6. Differential Amplifier

Experiments #6. Differential Amplifier Experiments #6 Differential Amplifier 1) Objectives: To understand the DC and AC operation of a differential amplifier. To measure DC voltages and currents in differential amplifier. To obtain measured

More information

ECE 3274 Common-Collector (Emitter-Follower) Amplifier Project

ECE 3274 Common-Collector (Emitter-Follower) Amplifier Project ECE 3274 Common-Collector (Emitter-Follower) Amplifier Project 1. Objective This project will show the biasing, gain, frequency response, and impedance properties of a common collector amplifier. 2. Components

More information

Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers

Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers 1. Explain the purpose of a thin, lightly doped base region.

More information

Chapter 5 Transistor Bias Circuits

Chapter 5 Transistor Bias Circuits Chapter 5 Transistor Bias Circuits Objectives Discuss the concept of dc biasing of a transistor for linear operation Analyze voltage-divider bias, base bias, and collector-feedback bias circuits. Basic

More information

Lecture (09) Bipolar Junction Transistor 3

Lecture (09) Bipolar Junction Transistor 3 Lecture (09) Bipolar Junction Transistor 3 By: Dr. Ahmed ElShafee ١ I THE BJT AS AN AMPLIFIER Amplification is the process of linearly increasing the amplitude of an electrical signal and is one of the

More information

Engineering Spring Homework Assignment 4: BJT Biasing and Small Signal Properties

Engineering Spring Homework Assignment 4: BJT Biasing and Small Signal Properties Engineering 1620 -- Spring 2011 Homework Assignment 4: BJT Biasing and Small Signal Properties 1.) The circuit below is a common collector amplifier using constant current biasing. (Constant current biasing

More information

Electronics Prof D. C. Dube Department of Physics Indian Institute of Technology, Delhi

Electronics Prof D. C. Dube Department of Physics Indian Institute of Technology, Delhi Electronics Prof D. C. Dube Department of Physics Indian Institute of Technology, Delhi Module No. # 04 Feedback in Amplifiers, Feedback Configurations and Multi Stage Amplifiers Lecture No. # 03 Input

More information

Bipolar Junction Transistors

Bipolar Junction Transistors Bipolar Junction Transistors Invented in 1948 at Bell Telephone laboratories Bipolar junction transistor (BJT) - one of the major three terminal devices Three terminal devices more useful than two terminal

More information

Chapter 6. BJT Amplifiers

Chapter 6. BJT Amplifiers Basic Electronic Devices and Circuits EE 111 Electrical Engineering Majmaah University 2 nd Semester 1432/1433 H Chapter 6 BJT Amplifiers 1 Introduction The things you learned about biasing a transistor

More information

SMALL SINGLE LOW FREQUENCY TRANSISTOR AMPLIFIERS

SMALL SINGLE LOW FREQUENCY TRANSISTOR AMPLIFIERS UNIT VI SMALL SINGLE LOW FREQUENCY TRANSISTOR 6.1 Introduction AMPLIFIERS V-I characteristics of an active device such as BJT are non-linear. The analysis of a non- linear device is complex. Thus to simplify

More information

STATIC CHARACTERISTICS OF TRANSISTOR

STATIC CHARACTERISTICS OF TRANSISTOR STAT CHARACTERISTS OF TRANSISTOR OBJECTIVE The purpose of the experiment is to study the characteristics of bipolar transistor in common emitter (CE) configuration. From the characteristic curve it is

More information

ECE 310L : LAB 9. Fall 2012 (Hay)

ECE 310L : LAB 9. Fall 2012 (Hay) ECE 310L : LAB 9 PRELAB ASSIGNMENT: Read the lab assignment in its entirety. 1. For the circuit shown in Figure 3, compute a value for R1 that will result in a 1N5230B zener diode current of approximately

More information

2. SINGLE STAGE BIPOLAR JUNCTION TRANSISTOR (BJT) AMPLIFIERS

2. SINGLE STAGE BIPOLAR JUNCTION TRANSISTOR (BJT) AMPLIFIERS 2. SINGLE STAGE BIPOLAR JUNCTION TRANSISTOR (BJT) AMPLIFIERS I. Objectives and Contents The goal of this experiment is to become familiar with BJT as an amplifier and to evaluate the basic configurations

More information

EE 332 Design Project

EE 332 Design Project EE 332 Design Project Variable Gain Audio Amplifier TA: Pohan Yang Students in the team: George Jenkins Mohamed Logman Dale Jackson Ben Alsin Instructor s Comments: Lab Grade: Introduction The goal of

More information

Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017

Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017 Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 12, 2017 1 Purpose To measure and understand the common emitter transistor characteristic curves. To use the base current gain

More information

BJT as an Amplifier and Its Biasing

BJT as an Amplifier and Its Biasing Microelectronic ircuits BJT as an Amplifier and Its Biasing Slide 1 Transfer haracteristics & Biasing Slide 2 BJT urrent-oltage relationship The collector current i I i i B s e i B vbe Is e T v BE T Emitter

More information

Transistor Biasing and Operational amplifier fundamentals. OP-amp Fundamentals and its DC characteristics. BJT biasing schemes

Transistor Biasing and Operational amplifier fundamentals. OP-amp Fundamentals and its DC characteristics. BJT biasing schemes Lab 1 Transistor Biasing and Operational amplifier fundamentals Experiment 1.1 Experiment 1.2 BJT biasing OP-amp Fundamentals and its DC characteristics BJT biasing schemes 1.1 Objective 1. To sketch potential

More information

ECE 255, Discrete-Circuit Amplifiers

ECE 255, Discrete-Circuit Amplifiers ECE 255, Discrete-Circuit Amplifiers 20 March 2018 In this lecture, we will continue with the study of transistor amplifiers with the presence of biasing circuits and coupling capacitors in place. We will

More information

EC1203: ELECTRONICS CIRCUITS-I UNIT-I TRANSISTOR BIASING PART-A

EC1203: ELECTRONICS CIRCUITS-I UNIT-I TRANSISTOR BIASING PART-A SHRI ANGALAMMAN COLLEGE OF ENGG & TECH., TRICHY 621105 (Approved by AICTE, New Delhi and Affiliated to Anna University Chennai/Trichy) ( ISO 9001:2008 Certified Institution) DEPARTMENT OF ELECTRONICS &

More information

II/IV B. TECH. DEGREE EXAMINATIONS, NOVEMBER Second Semester EC/EE ELECTRONIC CIRCUIT ANALYSIS. Time : Three Hours Max.

II/IV B. TECH. DEGREE EXAMINATIONS, NOVEMBER Second Semester EC/EE ELECTRONIC CIRCUIT ANALYSIS. Time : Three Hours Max. Total No. of Questions : 9] [Total No. of Pages : 02 B.Tech. II/ IV YEAR DEGREE EXAMINATION, APRIL/MAY - 2014 (Second Semester) EC/EE/EI Electronic Circuit Analysis Time : 03 Hours Maximum Marks : 70 Q1)

More information

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)

More information

Electronic Troubleshooting

Electronic Troubleshooting Electronic Troubleshooting Chapter 3 Bipolar Transistors Most devices still require some individual (discrete) transistors Used to customize operations Interface to external devices Understanding their

More information

ECE 3274 Common-Emitter Amplifier Project

ECE 3274 Common-Emitter Amplifier Project ECE 3274 Common-Emitter Amplifier Project 1. Objective The objective of this lab is to design and build the common-emitter amplifier with partial bypass of the emitter resistor to control the AC voltage

More information

Lecture 3: Transistors

Lecture 3: Transistors Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,

More information

Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook)

Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook) Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook) Recapitulation and Equivalent Circuit Models Previous slides present first order BJT model. Assumes npn transistor in active mode. Basic relationship

More information

EXPT NO: 1.A. COMMON EMITTER AMPLIFIER (Software) PRELAB:

EXPT NO: 1.A. COMMON EMITTER AMPLIFIER (Software) PRELAB: EXPT NO: 1.A COMMON EMITTER AMPLIFIER (Software) PRELAB: 1. Study the operation and working principle of CE amplifier. 2. Identify all the formulae you will need in this Lab. 3. Study the procedure of

More information

55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point.

55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point. Exam 3 Name: Score /65 Question 1 Unless stated otherwise, each question below is 1 point. 1. An engineer designs a class-ab amplifier to deliver 2 W (sinusoidal) signal power to an resistive load. Ignoring

More information

ECE 2201 PRELAB 6 BJT COMMON EMITTER (CE) AMPLIFIER

ECE 2201 PRELAB 6 BJT COMMON EMITTER (CE) AMPLIFIER ECE 2201 PRELAB 6 BJT COMMON EMITTER (CE) AMPLIFIER Hand Analysis P1. Determine the DC bias for the BJT Common Emitter Amplifier circuit of Figure 61 (in this lab) including the voltages V B, V C and V

More information

Frequency Response of Common Emitter Amplifier

Frequency Response of Common Emitter Amplifier Başkent University Department of Electrical and Electronics Engineering EEM 311 Electronics II Experiment 6 Frequency Response of Common Emitter Amplifier Aim: The aim of this experiment is to study the

More information

UNIVERSITY PART-B ANSWERS UNIT-1

UNIVERSITY PART-B ANSWERS UNIT-1 UNERSTY PART-B ANSWERS UNT-. Discuss about the DC load line and Q point. (OR) What is D.C. load line, how will you select the operating point, explain it using common emitter amplifier characteristics

More information

Emitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward

Emitter base bias. Collector base bias Active Forward Reverse Saturation forward Forward Cut off Reverse Reverse Inverse Reverse Forward SEMICONDUCTOR PHYSICS-2 [Transistor, constructional characteristics, biasing of transistors, transistor configuration, transistor as an amplifier, transistor as a switch, transistor as an oscillator] Transistor

More information

E84 Lab 3: Transistor

E84 Lab 3: Transistor E84 Lab 3: Transistor Cherie Ho and Siyi Hu April 18, 2016 Transistor Testing 1. Take screenshots of both the input and output characteristic plots observed on the semiconductor curve tracer with the following

More information

Analog & Telecommunication Electronics

Analog & Telecommunication Electronics Test 1 In this amplifier C1, C2 and C3 have negligible impedance at the operating frequency. R1 = 18k R2 =??? Re = 10 k Rc = 8,2 k RL = 22 k Val = 15 V hfe > 400 Vbe = 0,6 V; Vcesat = 0,2 V Vi C1 R1 C2

More information

Analysis Of A Transistor Amplifier Circuit Using H-parameters Ppt

Analysis Of A Transistor Amplifier Circuit Using H-parameters Ppt Analysis Of A Transistor Amplifier Circuit Using H-parameters Ppt Amplifiers: transistors biased in the flat-part of the i-v curves Find Q-point from dc equivalent circuit by using appropriate large-signal

More information

Document Name: Electronic Circuits Lab. Facebook: Twitter:

Document Name: Electronic Circuits Lab.  Facebook:  Twitter: Document Name: Electronic Circuits Lab www.vidyathiplus.in Facebook: www.facebook.com/vidyarthiplus Twitter: www.twitter.com/vidyarthiplus Copyright 2011-2015 Vidyarthiplus.in (VP Group) Page 1 CIRCUIT

More information

Lecture 19: Available Power. Distortion. Emitter Degeneration. Miller Effect.

Lecture 19: Available Power. Distortion. Emitter Degeneration. Miller Effect. Whites, EE 322 Lecture 19 Page 1 of 11 Lecture 19: Available Power. Distortion. Emitter Degeneration. Miller Effect. While the efficiency of an amplifier, as discussed in the previous lecture, is an important

More information

Analog and Telecommunication Electronics

Analog and Telecommunication Electronics Politecnico di Torino Electronic Eng. Master Degree Analog and Telecommunication Electronics C5 - Synchronous demodulation» AM and FM demodulation» Coherent demodulation» Tone decoders AY 2015-16 19/03/2016-1

More information

BJT AC Analysis CHAPTER OBJECTIVES 5.1 INTRODUCTION 5.2 AMPLIFICATION IN THE AC DOMAIN

BJT AC Analysis CHAPTER OBJECTIVES 5.1 INTRODUCTION 5.2 AMPLIFICATION IN THE AC DOMAIN BJT AC Analysis 5 CHAPTER OBJECTIVES Become familiar with the, hybrid, and hybrid p models for the BJT transistor. Learn to use the equivalent model to find the important ac parameters for an amplifier.

More information

In a cascade configuration, the overall voltage and current gains are given by:

In a cascade configuration, the overall voltage and current gains are given by: ECE 3274 Two-Stage Amplifier Project 1. Objective The objective of this lab is to design and build a direct coupled two-stage amplifier, including a common-source gain stage and a common-collector buffer

More information

Course Roadmap Rectification Bipolar Junction Transistor

Course Roadmap Rectification Bipolar Junction Transistor Course oadmap ectification Bipolar Junction Transistor Acnowledgements: Neamen, Donald: Microelectronics Circuit Analysis and Design, 3 rd Edition 6.101 Spring 2017 Lecture 3 1 6.101 Spring 2017 Lecture

More information

Improving Amplifier Voltage Gain

Improving Amplifier Voltage Gain 15.1 Multistage ac-coupled Amplifiers 1077 TABLE 15.3 Three-Stage Amplifier Summary HAND ANALYSIS SPICE RESULTS Voltage gain 998 1010 Input signal range 92.7 V Input resistance 1 M 1M Output resistance

More information

AE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015

AE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015 Q.2 a. By using Norton s theorem, find the current in the load resistor R L for the circuit shown in Fig.1. (8) Fig.1 IETE 1 b. Explain Z parameters and also draw an equivalent circuit of the Z parameter

More information

Analog and Telecommunication Electronics

Analog and Telecommunication Electronics Politecnico di Torino - ICT School Analog and Telecommunication Electronics G3 - Switching regulators» PWM regulators» Buck,» Boost,» Buck-boost» Flyback 30/05/2012-1 ATLCE - G3-2011 DDC Lesson G3: Switching

More information

ECEN 325 Lab 7: Characterization and DC Biasing of the BJT

ECEN 325 Lab 7: Characterization and DC Biasing of the BJT ECEN 325 Lab 7: Characterization and DC Biasing of the BJT 1 Objectives The purpose of this lab is to characterize NPN and PNP bipolar junction transistors (BJT), and to analyze and design DC biasing circuits

More information

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved. Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the

More information

Low-Noise Amplifiers

Low-Noise Amplifiers 007/Oct 4, 31 1 General Considerations Noise Figure Low-Noise Amplifiers Table 6.1 Typical LNA characteristics in heterodyne systems. NF IIP 3 db 10 dbm Gain 15 db Input and Output Impedance 50 Ω Input

More information