ECE 310 Microelectronics Circuits

Transcription

1 ECE 310 Microelectronics Circuits Bipolar Transistors Dr. Vishal Saxena Jan 20, 2014 Vishal Saxena 1

2 Bipolar Transistor n the chapter, we will study the physics of bipolar transistor and derive large and small signal models. 2 2

3 Structure and Symbol of Bipolar Transistor Bipolar transistor can be thought of as a sandwich of three doped Si regions. The outer two regions are doped with the same polarity, while the middle region is doped with opposite polarity. 3 3

4 njection of Carriers Reverse biased PN junction creates a large electric field that sweeps any injected minority carriers to their majority region. This ability proves essential in the proper operation of a bipolar transistor. 4 4

5 Forward Active Region Forward active region: V BE > 0, V BC < 0. Figure b) presents a wrong way of modeling figure a). 5 5

6 Accurate Bipolar Representation Collector also carries current due to carrier injection from base. 6 6

7 Carrier Transport in Base 7 7

8 Collector Current C C S AE qdnn N W S E E B AE qdnn N W B 2 i V exp V BE T 2 i V exp V BE T 1 Applying the law of diffusion, we can determine the charge flow across the base region into the collector. The equation above shows that the transistor is indeed a voltage-controlled element, thus a good candidate as an amplifier. 8 8

9 Parallel Combination of Transistors When two transistors are put in parallel and experience the same potential across all three terminals, they can be thought of as a single transistor with twice the emitter area. 9 9

10 Simple Transistor Configuration Although a transistor is a voltage to current converter, output voltage can be obtained by inserting a load resistor at the output and allowing the controlled current to pass thru it

11 Constant Current Source deally, the collector current does not depend on the collector to emitter voltage. This property allows the transistor to behave as a constant current source when its base-emitter voltage is fixed

12 Base Current C B Base current consists of two components: 1) Reverse injection of holes into the emitter and 2) recombination of holes with electrons coming from the emitter

13 Emitter Current E E C C C B B 1 1 Applying Kirchoff s current law to the transistor, we can easily find the emitter current

14 Summary of Currents E B C 1 1 S V exp V S 1 V exp V S V exp V BE T BE T BE T 14 14

15 Bipolar Transistor Large Signal Model A diode is placed between base and emitter and a voltage controlled current source is placed between the collector and emitter

16 Example: Maximum R L As R L increases, V x drops and eventually forward biases the collector-base junction. This will force the transistor out of forward active region. Therefore, there exists a maximum tolerable collector resistance

17 Characteristics of Bipolar Transistor Jan 20, 2014 Vishal Saxena 17

18 Example: V Characteristics Jan 20, 2014 Vishal Saxena 18

19 Transconductance g g g m m m T V d dv 1 V C T BE S V S exp V VBE exp V T BE T Transconductance, g m shows a measure of how well the transistor converts voltage to current. t will later be shown that g m is one of the most important parameters in circuit design. Jan 20, 2014 Vishal Saxena 19

20 Visualization of Transconductance g m can be visualized as the slope of C versus V BE. A large C has a large slope and therefore a large g m. Jan 20, 2014 Vishal Saxena 20

21 Transconductance and Area When the area of a transistor is increased by n, S increases by n. For a constant V BE, C and hence g m increases by a factor of n

22 Transconductance and c The figure above shows that for a given V BE swing, the current excursion around C2 is larger than it would be around C1. This is because g m is larger C2. Jan 20, 2014 Vishal Saxena 22

23 Small-Signal Model: Derivation Small signal model is derived by perturbing voltage difference every two terminals while fixing the third terminal and analyzing the change in current of all three terminals. We then represent these changes with controlled sources or resistors. Jan 20, 2014 Vishal Saxena 23

24 Small-Signal Model: V BE Change Jan 20, 2014 Vishal Saxena 24

25 Small-Signal Model: V CE Change deally, V CE has no effect on the collector current. Thus, it will not contribute to the small signal model. t can be shown that V CB has no effect on the small signal model, either

26 Small Signal Example g r m V g C T m Here, small signal parameters are calculated from DC operating point and are used to calculate the change in collector current due to a change in V BE. Jan 20, 2014 Vishal Saxena 26

27 Small Signal Example n this example, a resistor is placed between the power supply and collector, therefore, providing an output voltage. Jan 20, 2014 Vishal Saxena 27

28 Early Effect The claim that collector current does not depend on V CE is not accurate. As V CE increases, the depletion region between base and collector increases. Therefore, the effective base width decreases, which leads to an increase in the collector current

29 Early Effect llustration With Early effect, collector current becomes larger than usual and a function of V CE

30 Early Effect Representation 30 30

31 Early Effect and Large-Signal Model Early effect can be accounted for in large-signal model by simply changing the collector current with a correction factor. n this mode, base current does not change. Jan 20, 2014 Vishal Saxena 31

32 Early Effect and Small-Signal Model r o V CE C S VA V exp V BE T V A C Jan 20, 2014 Vishal Saxena 32

33 Summary of deas Jan 20, 2014 Vishal Saxena 33

34 Bipolar Transistor in Saturation When collector voltage drops below base voltage and forward biases the collector-base junction, base current increases and decreases the current gain factor,

35 Large-Signal Model for Saturation Region 35 35

36 Overall /V Characteristics The speed of the BJT also drops in saturation

37 Example: Acceptable V CC Region V CC C R C ( V 400mV ) BE n order to keep BJT at least in soft saturation region, the collector voltage must not fall below the base voltage by more than 400mV. A linear relationship can be derived for V CC and R C and an acceptable region can be chosen. Jan 20, 2014 Vishal Saxena 37

38 Deep Saturation n deep saturation region, the transistor loses its voltage-controlled current capability and V CE becomes constant

39 PNP Transistor With the polarities of emitter, collector, and base reversed, a PNP transistor is formed. All the principles that applied to NPN's also apply to PNP s, with the exception that emitter is at a higher potential than base and base at a higher potential than collector

40 A Comparison between NPN and PNP Transistors The figure above summarizes the direction of current flow and operation regions for both the NPN and PNP BJT s

41 PNP Equations C B E S V exp V 1 S EB T S V exp V EB T V exp V EB T Early Effect C S V exp V EB T V 1 V EC A 41 41

42 Large Signal Model for PNP 42 42

43 PNP Biasing Note that the emitter is at a higher potential than both the base and collector

44 Small Signal Analysis 44 44

45 Small-Signal Model for PNP Transistor The small signal model for PNP transistor is exactly DENTCAL to that of NPN. This is not a mistake because the current direction is taken care of by the polarity of V BE

46 Small Signal Model Example Jan 20, 2014 Vishal Saxena 46

47 Small Signal Model Example Small-signal model is identical to the previous ones. Jan 20, 2014 Vishal Saxena 47

48 Small Signal Model Example Since during small-signal analysis, a constant voltage supply is considered to be AC ground, the final small-signal model is identical to the previous two. Jan 20, 2014 Vishal Saxena 48

49 Small Signal Model Example V Jan 20, 2014 Vishal Saxena 49