Page 1. Telecommunication Electronics ETLCE - A2 06/09/ DDC 1. Politecnico di Torino ICT School. Amplifiers
|
|
- Mae Ray
- 5 years ago
- Views:
Transcription
1 Politecnico di Torino ICT School Amplifiers Telecommunication Electronics A2 Transistor amplifiers» Bias point and circuits,» Small signal models» Gain and bandwidth» Limits of linear analysis Op Amp amplifiers Previous courses Transistor amplifiers (lesson A2 and A3) Reference circuit and design procedures Linear model Nonlinear model» Distortion, harmonics, gain compression Lab 1: small signal analysis (linear model) Lab 2: large signal behaviour (nonlinear model) References: Transistor circuits 1.1, /09/ TLCE - A DDC 06/09/ TLCE - A DDC Amplifiers in positioning radio receiver GPS radio IC LNA: Low Noise Amplifier Wide dynamic range, low distorsion LNA: Low Noise Amplifier IF tuned amplifiers VGA: Variable Gain Amplifier VGA: Variable Gain Amplifier 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Amplifiers in radio structure OpAmp based Amplifers: where? IF channel LNA (low noise amplifier) RX input amplifiers - Low noise, wide dynamic IF channel amplifiers Amplifiers and filters for A/D converters PA (power amplifier) TX output amplifiers - High efficiency, low distorsion 06/09/ TLCE - A DDC Audio interface (mike and earphones) 06/09/ TLCE - A DDC Page DDC 1
2 Fully differential OpAmp Transistor-based amplifiers: where? Differential input AND differential output Double feedback loop Better balance LNA (low noise amplifier) RX input amplifiers: - Low noise -Widedynamicrange PA (power amplifier) TX output amplifier: - High efficiency - Low harmonic contents 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC What matters in an amplifier Gain Bandwidth Linearity (no distorsion) Noise (low) There is always some nonlinearity Reduce, counteract» Negative feedback, tuned circuits, Used to build» VGA/dynamic compressor»mixers» oscillators Amplifiers or. Types of amplifiers Transistor amplifiers Basic circuit Linear transistor model Biasing Small signal analysis Frequency response Design of amplifiers Specifications Design sequence Lab experiment Lesson A2: Amplifiers 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Small signal BJT,MOS,MOS-FET Same linear model (gm or hybrid) Transistor models Large signal: same method, different models BJT: exponential large signal model (rather simple) MOS: lin/log/quad large signal model (complex!) analytic model for BJT euristic models for MOS Similar effects and countermeasures Common Emitter circuit BJT reference circuit R E1 R E2 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Page DDC 2
3 Amplifier features and analysis Analysis of BJT circuit: step 2 AC amplifier: BJT Common Emitter circuit Input and output AC coupling: C1, C4 Emitter feedback DC: stabilize the bias point AC control the gain Analysis or design: Bias point AC passband gain (linear model) Cutoff frequency Nonlinear model analysis CE amplifier with bipolar transistor (BJT) Find bias point: (I C, V CE ) The bias point must be in the active region: V CE > 0,2 V V CE 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Analysis of BJT circuit: step 3 BJT (simplified) models CE amplifier with bipolar transistor (BJT) Find bias point: (I C, V CE ) Simplified model for bias point analysis (active area) B I B β I B C The bias point must be in the active region: V CE > 0,2 V Compute small signal parametares: hie, hfe Simplified model for small signal analysis, CE configuration. Parameters h fe i B or g m v BE B E g m v BE C hie, hfe, gm... h ie = V T * h fe /I C g m = I C /V T v BE E 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Bias point analysis BE net DC bias point Small signal parameters depend on I C and (to a lesser extent) on V CE solve bias point first I C I E is fixed by Base-Emitter mesh V CE is related with Collector-Emitter mesh Step 1: compute I C Equation on BE mesh First approximation: I B = 0 (h FE ) Step 2: check V CE value; Equation on CE mesh if > 0,2 V active area Ic depends from these devices Ic depends only from Base-Emitter mesh, R1, R2 are mapped to a unique mesh, with equivalent Thevenin parameters V BB, R B 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Page DDC 3
4 BE mesh CE net BE equivalent circuit V BB Vce depends from devices in the CE mesh Vce depends from Ic and devices at the Collector node Vce= -Ic-IeRe Vce 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Design choices Example: bias point, SS parameters If h fe is large, I B = (V BB V BE )/R B Design variables (for a given Ic) V BB, R B /V B Large V BB Good stability vs V BE (mainly due to temperature) Reduced output dynamic range (V CE ) Small R B Good stability vs β (mainly due to parameters spreading) High power consumption (R B = R 1 //R 2 ) R1 120 kω R2 82 kω 330 Ω Re2 12 kω 10 kω 12 V hfe 100 Vbb = 12 * 82 / 202 = 4,9 V Rb = 48,7 kω Ie = 4,3 / (12, ,7/100) = 0,335 ma Vce = 4,35 V hie = 7,76 kω gm = 12,88 ma/v C1 R1 R2 I1 Re2 Ie Q1 C3 C2 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC MOS reference circuit Lesson A2: Amplifiers Common Source G S D R E1 Types of amplifiers Transistor amplifiers Basic circuit Linear transistor model Biasing Small signal analysis Frequency response R E2 Design of amplifiers Specifications Design sequence Lab experiment 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Page DDC 4
5 BJT circuit: small signal analysis Gain analysis equivalent circuit Parts related with in-band gain (C3 open, C1, C2, C4 shorted) Compute the gain using the linear model I B hfe I B Reminders In signal analysis = 0 R1//R2 h ie Z E Z C R1, R2 are connected as parallel resistances to v O = i C Z C ; i C = i B h fe ; v i = i B h ie + i B (1+h fe ) Z E 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Results with linear model Example: gain with linear model 1 Gain with linear model If hfe >> 1 hie becomes negligible with respect to Z E (hfe+1) (h fe +1) hie = 8,96k hfe = 100 g m = 12,9 ma/v 12 kω 330 Ω 10 kω R1//R2 Ib hie hfe Ib Total load on the Collector: // Av = - (12k//10k)*100 / (8,96k + 330*100) = /09/ TLCE - A DDC 06/09/ TLCE - A DDC Example: gain with linear model 2 Example: Ri and Ro hie = 8,96k hfe = 100 g m = 12,9 ma/v 12 kω 330 Ω 10 kω Vbe R1//R2 hie g m Vbe hie = 8,96k hfe = 100 g m = 12,9 ma/v 12 kω 330 Ω 10 kω R1//R2 Ib hie hfe Ib Total load on the Collector: // Av = Ri =? Ro =? 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Page DDC 5
6 Frequency response Wideband AC amplifier Wideband AC amplifier Emitter/source feedback» stabilize DC bias point and in-band AC gain A V Z C /Z E Lower band limit: interstage series coupling capacitance Z E frequency behaviour transformer coupling (if any) Higher band limit parallel capacitors towards ground» designed capacitors» wiring parasitic» active device parasitic V u /V i (db) Band pass Low cutoff frequency (C1, C2, Ce) f (Hz) High cutoff frequency (C3, Cp1, Cp2) 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC High Frequency: L and C parasitics Parasitic capacitances Output Capacitance (load) insert isolation stage (Common Collector/Drain) PCB parasitic L and C Use SMD devices Careful PCB design Active device parasitic (C BC ) multiplied by Miller effect use HF devices with low C BC (GaAs, SiGe,..) proper circuit configuration (Common Base, cascode) C1 R1 R2 Cp1 Re2 C3 Q1 Ie C2 C4 Cp2 Cp1: Base-Collector parasitic (Cbc) C3: designed to set high cutoff frequency 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Miller effect Other circuit configurations: CC Parasitic Base-Collector capacitance (C BC ) is connected between to nodes with inverting gain A Corrent I cond flowing in C BC : I cond = jωc BC (V B V C ) = jωc BC (V B +AV B ) = jωc BC (A+1) V B (multiplied by Miller effect) Admittance multiplied by (gain +1) Common Collector / Common Drain high Zi low Zo No Miller effect (Av 1) Current gain Va Actual equivalent capacitance at Base node: C actual = C BC * (A+1) This capacitance limits the high frequency response Need for Miller free circuit configurations Good for Load separation Increasing Zi Lowering Zo Re Q1 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Page DDC 6
7 Other circuit configurations: CB Cascode amplifier Common Base / Common Gate low Zi, high Zu C BC connected to GND: No Miller effect Low Zi Low Zo ltage gain Q2 Only basic circuit, no bias network Va Q1: CE stage, Low Zc low V gain Good current gain -Low Vce - Low Miller effect Common Base Va Q2 Q1 Vu combined with CE in the cascode stage Va Vu Q2: CB stage Good voltage gain - No Miller effect Common Emitter 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Cascode amplifier Lesson A2: Amplifiers Common Base stage (CB) C BC parasitic towards ground no Miller effect (C multiplier) provides voltage gain Common Emitter output to low-z load small voltage dynamic provides current gain minimum effect of C BC parasitic capacitance Overall result higher gain at high frequency Types of amplifiers Transistor amplifiers Basic circuit Linear transistor model Biasing Small signal analysis Frequency response Design of amplifiers Specifications Design sequence Lab experiment 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Lab 1 and lab 2 Amplifier design specs Design an amplifier from the provided specs A real design:» Multiple solutions» Some specs are implicit» Devices have poorly defined parameters Simulate, build, measure Homework: design, simulation In the lab: build, measure, debug Compare specs/simulation/measurements Linear model lab 1 Nonlinear model lab 2 Single-Transistor Amplifier with: ltage gain Vu/ = 13 (nominal) Bandwidth -3 db from 200 Hz to 20 khz (minimum) Output dynamic at least 3 Vpp on 10 kω load (or higher) Supply voltage 12 V (nominal) 2N2222A Transistor All feature within +/-10%, at ambient temperature Gain and output dynamic at band center References: Text: design procedure: Cap 1, 1.P1 Lab procedures: Cap 1, 1.L1 web guides: lab 1 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Page DDC 7
8 Design sequence Select the circuit: CE with Ze, bias network Vb/Re Choose a no-load dynamic, or Ve, or Stabilty/power/dynamic tradeoff Compute, or no-load dynamic, or Ve Compute Ic Design bias network to get Ic: R1, R2, +Re2 Computer from gain specs Get C1, C2, C3, C4 from frequency behaviour specs. Passive devices (R and C) available in normalized values Know what they are (E12, E24, ) Only E12 values available in the lab From computed to normalized values Checks and measurements The transfer function is modified Component tolerances expand the Bode plot (a line) to a somewhat wide band Specs must lie within the strip Compare measurements with allowed variations of Bode plot 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Theory and practice Lesson A2: final questions V u /V i (db) Measured values (with errors) Which different types of amplifiers can be found in a radio system? Write an approximate expression for the voltage gain of a CE amplifier. Which elements limit the bandwidth of amplifiers? Design specification k Design band, taking into account device parameters tolerances f (Hz) Which are the best configurations for high bandwidth amplifiers? List the specifications for an amplifier (what you must know to selct an amplifier from a catalogue) Define the design procedure for a single transistor amplifier Describe the lab procedures to measure the frequency response on an amplifier. 06/09/ TLCE - A DDC 06/09/ TLCE - A DDC Next lesson (A3) How to evaluate the effects of nonlinearity How to reduce the nonlinearity effects Feedback Tuned circuits How to exploit nonlinearity Exploit harmonics Exploit gain changes Lab 2: Large signal behaviour (nonlinear) Text reference: Narrowband and tuned amplifiers: /09/ TLCE - A DDC Page DDC 8
Analog and Telecommunication Electronics
Politecnico di Torino - ICT School Analog and Telecommunication Electronics A3 BJT Amplifiers»Biasing» Output dynamic range» Small signal analysis» Voltage gain» Frequency response 12/03/2012-1 ATLCE -
More informationATLCE - A3 01/03/2016. Analog and Telecommunication Electronics 2016 DDC 1. Politecnico di Torino - ICT School. Lesson A3: BJT Amplifiers
Politecnico di Torino - ICT School Analog and Telecommunication Electronics A3 BJT Amplifiers»Biasing» Output dynamic range» Small signal analysis» ltage gain» Frequency response AY 2015-16 Biasing Output
More informationTLCE - A3 08/09/ /09/ TLCE - A DDC. IF channel Zc. - Low noise, wide dynamic Ie Vo 08/09/ TLCE - A DDC
Politecnico di Torino ICT School Telecommunication Electronics A3 Amplifiers nonlinearity» Reference circuit» Nonlinear models» Effects of nonlinearity» Applications of nonlinearity Large signal amplifiers
More informationBJT Circuits (MCQs of Moderate Complexity)
BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r
More informationUNIT I BIASING OF DISCRETE BJT AND MOSFET PART A
UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A 1. Why do we choose Q point at the center of the load line? 2. Name the two techniques used in the stability of the q point.explain. 3. Give the expression
More informationESE319 Introduction to Microelectronics High Frequency BJT Model & Cascode BJT Amplifier
High Frequency BJT Model & Cascode BJT Amplifier 1 Gain of 10 Amplifier Non-ideal Transistor C in R 1 V CC R 2 v s Gain starts dropping at > 1MHz. Why! Because of internal transistor capacitances that
More informationPg: 1 VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203 Department of Electronics & Communication Engineering Regulation: 2013 Acadamic Year : 2015 2016 EC6304 Electronic Circuits I Question
More informationSIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road QUESTION BANK
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK Subject with Code : Electronic Circuit Analysis (16EC407) Year & Sem: II-B.Tech & II-Sem
More informationAmplifier Frequency Response, Feedback, Oscillations; Op-Amp Block Diagram and Gain-Bandwidth Product
Amplifier Frequency Response, Feedback, Oscillations; Op-Amp Block Diagram and Gain-Bandwidth Product Physics116A,12/4/06 Draft Rev. 1, 12/12/06 D. Pellett 2 Negative Feedback and Voltage Amplifier AB
More informationSmall signal ac equivalent circuit of BJT
UNIT-2 Part A 1. What is an ac load line? [N/D 16] A dc load line gives the relationship between the q-point and the transistor characteristics. When capacitors are included in a CE transistor circuit,
More informationSkyup's Media ELECTRONIC CIRCUIT ANALYSIS
ELECTRONIC CIRCUIT ANALYSIS MALLAREDDY COLLEGE OF ENGINEERING AND TECHNOLOGY DEPARTMENT OF ELECTROINICS AND COMMUNICATION ENGINEERING Answer all the following questions: PART A: B.TECH II YEAR II SEMESTER
More informationEE 332 Design Project
EE 332 Design Project Variable Gain Audio Amplifier TA: Pohan Yang Students in the team: George Jenkins Mohamed Logman Dale Jackson Ben Alsin Instructor s Comments: Lab Grade: Introduction The goal of
More informationElectron Devices and Circuits
Electron Devices and Circuits (EC 8353) Prepared by Mr.R.Suresh, AP/EEE Ms.S.KARKUZHALI,A.P/EEE BJT small signal model Analysis of CE, CB, CC amplifiers- Gain and frequency response MOSFET small signal
More informationEE LINEAR INTEGRATED CIRCUITS & APPLICATIONS
UNITII CHARACTERISTICS OF OPAMP 1. What is an opamp? List its functions. The opamp is a multi terminal device, which internally is quite complex. It is a direct coupled high gain amplifier consisting of
More informationAE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014
Q.2 a. State and explain the Reciprocity Theorem and Thevenins Theorem. a. Reciprocity Theorem: If we consider two loops A and B of network N and if an ideal voltage source E in loop A produces current
More information55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point.
Exam 3 Name: Score /65 Question 1 Unless stated otherwise, each question below is 1 point. 1. An engineer designs a class-ab amplifier to deliver 2 W (sinusoidal) signal power to an resistive load. Ignoring
More informationExperiment 8&9 BJT AMPLIFIER
Experiment 8&9 BJT AMPLIFIER 1 BJT AS AMPLIFIER 1. Objectiv e: 1- To demonstrate the operation and characteristics of small signals common emitter amplifiers. 2- What do we mean by a linear amplifier and
More informationLab 4. Transistor as an amplifier, part 2
Lab 4 Transistor as an amplifier, part 2 INTRODUCTION We continue the bi-polar transistor experiments begun in the preceding experiment. In the common emitter amplifier experiment, you will learn techniques
More informationUNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering
UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering EXPERIMENT 7 BJT AMPLIFIER CONFIGURATIONS AND INPUT/OUTPUT IMPEDANCE OBJECTIVES The purpose of this experiment
More informationCode: 9A Answer any FIVE questions All questions carry equal marks *****
II B. Tech II Semester (R09) Regular & Supplementary Examinations, April/May 2012 ELECTRONIC CIRCUIT ANALYSIS (Common to EIE, E. Con. E & ECE) Time: 3 hours Max Marks: 70 Answer any FIVE questions All
More informationLab 2: Discrete BJT Op-Amps (Part I)
Lab 2: Discrete BJT Op-Amps (Part I) This is a three-week laboratory. You are required to write only one lab report for all parts of this experiment. 1.0. INTRODUCTION In this lab, we will introduce and
More informationBy: Dr. Ahmed ElShafee
Lecture (04) Transistor Bias Circuit 3 BJT Amplifiers 1 By: Dr. Ahmed ElShafee ١ Emitter Feedback Bias If an emitter resistor is added to the base bias circuit in Figure, the result is emitter feedback
More information(a) BJT-OPERATING MODES & CONFIGURATIONS
(a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base
More informationLast time: BJT CE and CB amplifiers biased by current source
Last time: BJT CE and CB amplifiers biased by current source Assume FA regime, then VB VC V E I B I E, β 1 I Q C α I, V 0. 7V Calculate V CE and confirm it is > 0.2-0.3V, then BJT can be replaced with
More informationUNIT II MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS
UNIT II MIDBAND ANALYSIS OF SMALL SIGNAL AMPLIFIERS CE, CB and CC amplifiers. Method of drawing small-signal equivalent circuit. Midband analysis of various types of single stage amplifiers to obtain gain,
More informationHomework Assignment 12
Homework Assignment 12 Question 1 Shown the is Bode plot of the magnitude of the gain transfer function of a constant GBP amplifier. By how much will the amplifier delay a sine wave with the following
More informationELC224 Final Review (12/10/2009) Name:
ELC224 Final Review (12/10/2009) Name: Select the correct answer to the problems 1 through 20. 1. A common-emitter amplifier that uses direct coupling is an example of a dc amplifier. 2. The frequency
More informationBJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
More informationModule-1 BJT AC Analysis: The re Transistor Model. Common-Base Configuration
Module-1 BJT AC Analysis: BJT AC Analysis: BJT AC Analysis: BJT Transistor Modeling, The re transistor model, Common emitter fixed bias, Voltage divider bias, Emitter follower configuration. Darlington
More informationEC1203: ELECTRONICS CIRCUITS-I UNIT-I TRANSISTOR BIASING PART-A
SHRI ANGALAMMAN COLLEGE OF ENGG & TECH., TRICHY 621105 (Approved by AICTE, New Delhi and Affiliated to Anna University Chennai/Trichy) ( ISO 9001:2008 Certified Institution) DEPARTMENT OF ELECTRONICS &
More informationUNIVERSITY OF PENNSYLVANIA EE 206
UNIVERSITY OF PENNSYLVANIA EE 206 TRANSISTOR BIASING CIRCUITS Introduction: One of the most critical considerations in the design of transistor amplifier stages is the ability of the circuit to maintain
More informationLinear electronic. Lecture No. 1
1 Lecture No. 1 2 3 4 5 Lecture No. 2 6 7 8 9 10 11 Lecture No. 3 12 13 14 Lecture No. 4 Example: find Frequency response analysis for the circuit shown in figure below. Where R S =4kR B1 =8kR B2 =4k R
More informationMidterm 2 Exam. Max: 90 Points
Midterm 2 Exam Name: Max: 90 Points Question 1 Consider the circuit below. The duty cycle and frequency of the 555 astable is 55% and 5 khz respectively. (a) Determine a value for so that the average current
More informationAnalog Integrated Circuit Configurations
Analog Integrated Circuit Configurations Basic stages: differential pairs, current biasing, mirrors, etc. Approximate analysis for initial design MOSFET and Bipolar circuits Basic Current Bias Sources
More informationAnalog and Telecommunication Electronics
Politecnico di Torino - ICT School Analog and Telecommunication Electronics F3 - Actuator driving» Driving BJT switches» Driving MOS-FET» SOA and protection» Smart switches 29/06/2011-1 ATLCE - F3-2011
More informationUNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press
UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth
More informationI C I E =I B = I C 1 V BE 0.7 V
Guide to NPN Amplifier Analysis Jason Woytowich 1. Transistor characteristics A BJT has three operating modes cutoff, active, and saturation. For applications, like amplifiers, where linear characteristics
More information4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.
More informationECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model
Faculty of Engineering ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Agenda I & V Notations BJT Devices & Symbols BJT Large Signal Model 2 I, V Notations (1) It is critical to understand
More informationINSTITUTE OF AERONAUTICAL ENGINEERING (AUTONOMUS) Dundigal, Hyderabad
INSTITUTE OF AERONAUTICAL ENGINEERING (AUTONOMUS) Dundigal, Hyderabad - 00 0 ELECTRONICS AND COMMUNICATION ENGINEERING ASSIGNMENT Name : ELECTRONIC CIRCUIT ANALYSIS Code : A0 Class : II - B. Tech nd semester
More informationUsing LME49810 to Build a High-Performance Power Amplifier Part I
Using LME49810 to Build a High-Performance Power Amplifier Part I Panson Poon Introduction Although switching or Class-D amplifiers are gaining acceptance to audiophile community, linear amplification
More informationImproving Amplifier Voltage Gain
15.1 Multistage ac-coupled Amplifiers 1077 TABLE 15.3 Three-Stage Amplifier Summary HAND ANALYSIS SPICE RESULTS Voltage gain 998 1010 Input signal range 92.7 V Input resistance 1 M 1M Output resistance
More informationExperiment 8 Frequency Response
Experiment 8 Frequency Response W.T. Yeung, R.A. Cortina, and R.T. Howe UC Berkeley EE 105 Spring 2005 1.0 Objective This lab will introduce the student to frequency response of circuits. The student will
More informationENEE 307 Electronic Circuit Design Laboratory Spring A. Iliadis Electrical Engineering Department University of Maryland College Park MD 20742
ENEE 307 Electronic Circuit Design Laboratory Spring 2012 A. Iliadis Electrical Engineering Department University of Maryland College Park MD 20742 Video Amps 2.2. Video Amplifiers Before coming to this
More informationESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source
ESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source Output from Collector Start with bias DC analysis make sure BJT is in FA, then calculate small signal parameters for AC analysis.
More informationThe George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB
The George Washington University School of Engineering and Applied Science Department of Electrical and Computer Engineering ECE 20 - LAB Experiment # 6 (Part I) Bipolar Junction Transistors Common Emitter
More informationStructured Electronic Design
Structured Electronic Design Building the nullor: Biasing R R bias1 bias 2 V + I ce c R bias 2 C 2 C couple couple1 1 Today Specs 1 2 N D B Bias Verification Biasing Verification (simulation) 2 At the
More information5.25Chapter V Problem Set
5.25Chapter V Problem Set P5.1 Analyze the circuits in Fig. P5.1 and determine the base, collector, and emitter currents of the BJTs as well as the voltages at the base, collector, and emitter terminals.
More informationUnit WorkBook 4 Level 4 ENG U19 Electrical and Electronic Principles LO4 Digital & Analogue Electronics 2018 Unicourse Ltd. All Rights Reserved.
Pearson BTEC Levels 4 Higher Nationals in Engineering (RQF) Unit 19: Electrical and Electronic Principles Unit Workbook 4 in a series of 4 for this unit Learning Outcome 4 Digital & Analogue Electronics
More informationEXPT NO: 1.A. COMMON EMITTER AMPLIFIER (Software) PRELAB:
EXPT NO: 1.A COMMON EMITTER AMPLIFIER (Software) PRELAB: 1. Study the operation and working principle of CE amplifier. 2. Identify all the formulae you will need in this Lab. 3. Study the procedure of
More informationChapter 15 Goals. ac-coupled Amplifiers Example of a Three-Stage Amplifier
Chapter 15 Goals ac-coupled multistage amplifiers including voltage gain, input and output resistances, and small-signal limitations. dc-coupled multistage amplifiers. Darlington configuration and cascode
More informationUNIT - 1 OPERATIONAL AMPLIFIER FUNDAMENTALS
UNIT - 1 OPERATIONAL AMPLIFIER FUNDAMENTALS 1.1 Basic operational amplifier circuit- hte basic circuit of an operational amplifier is as shown in above fig. has a differential amplifier input stage and
More informationAnalog and Telecommunication Electronics
Politecnico di Torino - ICT School Analog and Telecommunication Electronics B5 - Multipliers/mixer circuits» Error taxonomy» Basic multiplier circuits» Gilbert cell» Bridge MOS and diode circuits» Balanced
More informationEE 330 Laboratory 8 Discrete Semiconductor Amplifiers
EE 330 Laboratory 8 Discrete Semiconductor Amplifiers Fall 2018 Contents Objective:...2 Discussion:...2 Components Needed:...2 Part 1 Voltage Controlled Amplifier...2 Part 2 A Nonlinear Application...3
More information2. SINGLE STAGE BIPOLAR JUNCTION TRANSISTOR (BJT) AMPLIFIERS
2. SINGLE STAGE BIPOLAR JUNCTION TRANSISTOR (BJT) AMPLIFIERS I. Objectives and Contents The goal of this experiment is to become familiar with BJT as an amplifier and to evaluate the basic configurations
More informationTutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers
Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers 1. Explain the purpose of a thin, lightly doped base region.
More informationII/IV B. TECH. DEGREE EXAMINATIONS, NOVEMBER Second Semester EC/EE ELECTRONIC CIRCUIT ANALYSIS. Time : Three Hours Max.
Total No. of Questions : 9] [Total No. of Pages : 02 B.Tech. II/ IV YEAR DEGREE EXAMINATION, APRIL/MAY - 2014 (Second Semester) EC/EE/EI Electronic Circuit Analysis Time : 03 Hours Maximum Marks : 70 Q1)
More informationPhy 335, Unit 4 Transistors and transistor circuits (part one)
Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit
More informationChap. 4 BJT transistors
Chap. 4 BJT transistors Widely used in amplifier circuits Formed by junction of 3 materials npn or pnp structure ECE 3111 - Electronics - Dr. S. Kozaitis- 1 ECE 3111 - Electronics - Dr. S. Kozaitis- 2
More informationField Effect Transistors
Field Effect Transistors Purpose In this experiment we introduce field effect transistors (FETs). We will measure the output characteristics of a FET, and then construct a common-source amplifier stage,
More informationI1 19u 5V R11 1MEG IDC Q7 Q2N3904 Q2N3904. Figure 3.1 A scaled down 741 op amp used in this lab
Lab 3: 74 Op amp Purpose: The purpose of this laboratory is to become familiar with a two stage operational amplifier (op amp). Students will analyze the circuit manually and compare the results with SPICE.
More informationCurrent Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.
Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect
More informationECE 2201 PRELAB 6 BJT COMMON EMITTER (CE) AMPLIFIER
ECE 2201 PRELAB 6 BJT COMMON EMITTER (CE) AMPLIFIER Hand Analysis P1. Determine the DC bias for the BJT Common Emitter Amplifier circuit of Figure 61 (in this lab) including the voltages V B, V C and V
More informationDEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013)
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I (Regulations 2013 UNIT-1 Part A 1. What is a Q-point? [N/D 16] The operating point also known as quiescent
More informationFrequency Response of Common Emitter Amplifier
Başkent University Department of Electrical and Electronics Engineering EEM 311 Electronics II Experiment 6 Frequency Response of Common Emitter Amplifier Aim: The aim of this experiment is to study the
More informationTransistor Biasing and Operational amplifier fundamentals. OP-amp Fundamentals and its DC characteristics. BJT biasing schemes
Lab 1 Transistor Biasing and Operational amplifier fundamentals Experiment 1.1 Experiment 1.2 BJT biasing OP-amp Fundamentals and its DC characteristics BJT biasing schemes 1.1 Objective 1. To sketch potential
More informationFinal Exam: Electronics 323 December 14, 2010
Final Exam: Electronics 323 December 4, 200 Formula sheet provided. In all questions give at least some explanation of what you are doing to receive full value. You may answer some questions ON the question
More informationPhysics of Bipolar Transistor
Physics of Bipolar Transistor Motivations - In many electronic applications, amplifier is the most fundamental building block. Ex Audio amplifier: amplifies electric signal to drive a speaker RF Power
More informationDocument Name: Electronic Circuits Lab. Facebook: Twitter:
Document Name: Electronic Circuits Lab www.vidyathiplus.in Facebook: www.facebook.com/vidyarthiplus Twitter: www.twitter.com/vidyarthiplus Copyright 2011-2015 Vidyarthiplus.in (VP Group) Page 1 CIRCUIT
More informationElectronics Prof D. C. Dube Department of Physics Indian Institute of Technology, Delhi
Electronics Prof D. C. Dube Department of Physics Indian Institute of Technology, Delhi Module No. # 04 Feedback in Amplifiers, Feedback Configurations and Multi Stage Amplifiers Lecture No. # 03 Input
More informationSolid State Devices & Circuits. 18. Advanced Techniques
ECE 442 Solid State Devices & Circuits 18. Advanced Techniques Jose E. Schutt-Aine Electrical l&c Computer Engineering i University of Illinois jschutt@emlab.uiuc.edu 1 Darlington Configuration - Popular
More informationSTATIC CHARACTERISTICS OF TRANSISTOR
STAT CHARACTERISTS OF TRANSISTOR OBJECTIVE The purpose of the experiment is to study the characteristics of bipolar transistor in common emitter (CE) configuration. From the characteristic curve it is
More informationFor the purpose of this problem sheet use the model given in the lecture notes.
Analogue Electronics Questions Todd Huffman & Tony Weidberg, MT 2018 (updated 30/10/18). For the purpose of this problem sheet use the model given in the lecture notes. The current gain is defined by a
More informationGATE: Electronics MCQs (Practice Test 1 of 13)
GATE: Electronics MCQs (Practice Test 1 of 13) 1. Removing bypass capacitor across the emitter leg resistor in a CE amplifier causes a. increase in current gain b. decrease in current gain c. increase
More informationECE 3274 Common-Emitter Amplifier Project
ECE 3274 Common-Emitter Amplifier Project 1. Objective The objective of this lab is to design and build the common-emitter amplifier with partial bypass of the emitter resistor to control the AC voltage
More informationCommon-Emitter Amplifier
Dr. Charles Kim Common-Emitter Amplifier A. Before We Start As the title of this lab says, this lab is about designing a Common-Emitter Amplifier, and this in this stage of the lab course is premature,
More informationEngineering Spring Homework Assignment 4: BJT Biasing and Small Signal Properties
Engineering 1620 -- Spring 2011 Homework Assignment 4: BJT Biasing and Small Signal Properties 1.) The circuit below is a common collector amplifier using constant current biasing. (Constant current biasing
More informationAnalog and Telecommunication Electronics
Politecnico di Torino - ICT School Analog and Telecommunication Electronics F2 Active power devices»mos»bjt» IGBT, TRIAC» Safe Operating Area» Thermal analysis 30/05/2012-1 ATLCE - F2-2011 DDC Lesson F2:
More informationECE 3274 Common-Collector (Emitter-Follower) Amplifier Project
ECE 3274 Common-Collector (Emitter-Follower) Amplifier Project 1. Objective This project will show the biasing, gain, frequency response, and impedance properties of a common collector amplifier. 2. Components
More informationFigure1: Basic BJT construction.
Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).
More informationMini Project 2 Single Transistor Amplifiers. ELEC 301 University of British Columbia
Mini Project 2 Single Transistor Amplifiers ELEC 301 University of British Columbia 44638154 October 27, 2017 Contents 1 Introduction 1 2 Investigation 1 2.1 Part 1.................................................
More informationChapter Three " BJT Small-Signal Analysis "
Chapter Three " BJT Small-Signal Analysis " We now begin to examine the small-signal ac response of the BJT amplifier by reviewing the models most frequently used to represent the transistor in the sinusoidal
More informationAnalog Integrated Circuit Design Exercise 1
Analog Integrated Circuit Design Exercise 1 Integrated Electronic Systems Lab Prof. Dr.-Ing. Klaus Hofmann M.Sc. Katrin Hirmer, M.Sc. Sreekesh Lakshminarayanan Status: 21.10.2015 Pre-Assignments The lecture
More informationEarly Effect & BJT Biasing
Early Effect & BJT Biasing Early Effect DC BJT Behavior DC Biasing the BJT 1 ESE319 Introduction to Microelectronics Early Effect Saturation region Forward-Active region 4 3 Ideal NPN BJT Transfer V Characteristic
More informationEXPERIMENT NO -9 TRANSITOR COMMON -BASE CONFIGURATION CHARACTERISTICS
Contents EXPERIMENT NO -9 TRANSITOR COMMON -BASE CONFIGURATION CHARACTERISTICS... 3 EXPERIMENT NO -10. FET CHARACTERISTICS... 8 Experiment # 11 Non-inverting amplifier... 13 Experiment #11(B) Inverting
More informationWeek 12: Output Stages, Frequency Response
ELE 2110A Electronic Circuits Week 12: Output Stages, Frequency esponse (2 hours only) Lecture 12-1 Output Stages Topics to cover Amplifier Frequency esponse eading Assignment: Chap 15.3, 16.1 of Jaeger
More informationThe Miller Approximation. CE Frequency Response. The exact analysis is worked out on pp of H&S.
CE Frequency Response The exact analysis is worked out on pp. 639-64 of H&S. The Miller Approximation Therefore, we consider the effect of C µ on the input node only V ---------- out V s = r g π m ------------------
More informationChapter 6. BJT Amplifiers
Basic Electronic Devices and Circuits EE 111 Electrical Engineering Majmaah University 2 nd Semester 1432/1433 H Chapter 6 BJT Amplifiers 1 Introduction The things you learned about biasing a transistor
More informationCode No: R Set No. 1
Code No: R059210404 Set No. 1 II B.Tech I Semester Supplimentary Examinations, February 2008 ELECTRONIC CIRCUIT ANALYSIS ( Common to Electronics & Communication Engineering and Electronics & Telematics)
More informationUNIVERSITY PART-B ANSWERS UNIT-1
UNERSTY PART-B ANSWERS UNT-. Discuss about the DC load line and Q point. (OR) What is D.C. load line, how will you select the operating point, explain it using common emitter amplifier characteristics
More informationLecture #7 BJT and JFET Frequency Response
November 2014 Integrated Technical Education Cluster At AlAmeeria J-601-1448 Electronic Principals Lecture #7 BJT and JFET Frequency Response Instructor: Dr. Ahmad El-Banna Agenda Introduction General
More informationUNIT 1 MULTI STAGE AMPLIFIES
UNIT 1 MULTI STAGE AMPLIFIES 1. a) Derive the equation for the overall voltage gain of a multistage amplifier in terms of the individual voltage gains. b) what are the multi-stage amplifiers? 2. Describe
More informationE84 Lab 3: Transistor
E84 Lab 3: Transistor Cherie Ho and Siyi Hu April 18, 2016 Transistor Testing 1. Take screenshots of both the input and output characteristic plots observed on the semiconductor curve tracer with the following
More informationFREQUENTLY ASKED QUESTIONS
FREQUENTLY ASKED QUESTIONS UNIT-1 SUBJECT : ELECTRONIC DEVICES AND CIRCUITS SUBJECT CODE : EC6202 BRANCH: EEE PART -A 1. What is meant by diffusion current in a semi conductor? (APR/MAY 2010, 2011, NOV/DEC
More informationAnalog and Telecommunication Electronics
Politecnico di Torino - ICT School Analog and Telecommunication Electronics E1 - Filters type and design» Filter taxonomy and parameters» Design flow and tools» FilterCAD example» Basic II order cells
More informationAudio, Dual-Matched NPN Transistor MAT12
Data Sheet FEATURES Very low voltage noise: nv/ Hz maximum at 00 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μv maximum Outstanding offset voltage drift: 0.03 μv/ C typical
More informationEE 330 Laboratory 8 Discrete Semiconductor Amplifiers
EE 330 Laboratory 8 Discrete Semiconductor Amplifiers Fall 2017 Contents Objective:... 2 Discussion:... 2 Components Needed:... 2 Part 1 Voltage Controlled Amplifier... 2 Part 2 Common Source Amplifier...
More informationRadivoje Đurić, 2015, Analogna Integrisana Kola 1
OTA-output buffer 1 According to the types of loads, the driving capability of the output stages differs. For switched capacitor circuits which have high impedance capacitive loads, class A output stage
More informationAnalog and Telecommunication Electronics
Politecnico di Torino - ICT School Analog and Telecommunication Electronics E1 - Filters type and design» Filter taxonomy and parameters» Design flow and tools» FilterCAD example» Basic II order cells
More informationIn a cascade configuration, the overall voltage and current gains are given by:
ECE 3274 Two-Stage Amplifier Project 1. Objective The objective of this lab is to design and build a direct coupled two-stage amplifier, including a common-source gain stage and a common-collector buffer
More information