o C -40 ~ (2) Notes: (1) Recommended Value 1.8±0.2 / 9±1 N m (2) Recommended Value 5.5±0.5N m
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1 IGBT MODULE MBN24E7D Silicon N-channel IGBT. FEATURES High speed, low loss IGBT module due o LiPT Trench Technology Low noise due o ulra sof fas recovery diode. (U-SFD) High reverse recovery capabiliy (HiRC) High hermal faigue durabiliy. ( Tc=7K, N>3,cycles) Isolaed hea sink (erminal o base). Spec.No.IGBT-SP-27 R7 P 2. ABSOLUTE MAXIMUM RATINGS (Tc=25 o C ) Iem Symbol Uni MBN24E7D Collecor Emier Volage V CES V,7 Gae Emier Volage V GES V ±2 Collecor Curren DC I C 2,4 A ms I Cp 4,8 Forward Curren DC I F 2,4 A ms I FM 4,8 Juncion Temperaure T j o C -4 ~ +25 Sorage Temperaure Tsg o C -4 ~ +25 Isolaion Volage V ISO V RMS 4, (AC minue) (M4) - 2 () Terminals Screw Torque (M8) - N m () Mouning (M6) - 6 (2) Noes: () Recommended Value.8±.2 / 9± N m (2) Recommended Value 5.5±.5N m 3. ELECTRIC CHARACTERISTICS Iem Symbol Uni Min. Typ. Max. Tes Condiions Collecor Emier Cu-Off Curren I CES ma V CE =,7V, V GE =V, Tj=25 o C V CE =,7V, V GE =V, Tj=25 o C Gae Emier Leakage Curren I GES na V GE =±2V, V CE =V, Tj=25 o C Collecor Emier Sauraion Volage V CE (sa) V I C =2,4A, V GE =5V, Tj=25 o C 3.3 I C =2,4A, V GE =5V, Tj=25 o C Gae Emier Threshold Volage V GE (TO) V V CE =V, I C =24mA, Tj=25 o C Inpu Capaciance C ies nf V CE =V, V GE =V, f=khz, Tj=25 o C Gae Charge Q G µc VGE=±5V, Vcc=9V, Ic=24A Inernal Gae Resisance Rge(in) V CE =V, V GE =V, f=khz, Tj=25 o C Rise Time r V CC =9V, Ic=2,4A Swiching Times Turn On Time on L=55nH,C GE =22nF µs Fall Time f R G =Ω Turn Off Time off V GE =±5V, Tj=25 o C Peak Forward Volage Drop V FM V IF=2,4A, V GE =V, Tj=25 o C 2.5 IF=2,4A, V GE =V, Tj=25 o C Reverse Recovery Time rr µs V Turn On Loss E on(%) J/P -. CC =9V, Ic= IF=2,4A L=55nH,C GE =22nF Turn Off Loss E off(%) J/P R G =Ω Reverse Recovery Loss E rr(%) J/P -.7. V GE =±5V, Tj=25 o C Reverse Recovery Peak Curren IRM A Sray inducance in module L SCE nh 2 RBSOA Ic A V CC =V, L=55nH,C GE =22nF Recovery SOA I F A R G =Ω V GE =±5V, Tj=25 o C Parial Discharge Exincion Volage V PDoff V RMS Q=pC, 5Hz, Noes : R G and C GE value is he es condiion s value for evaluaion of he swiching imes, no recommended value. Please, deermine he suiable R G and C GE value afer he measuremen of swiching waveforms (overshoo volage, ec.) wih appliance mouned. * Please conac our represenaives a order. * For improvemen, specificaions are subjec o change wihou noice. * For acual applicaion, please confirm his spec shee is he newes revision.
2 IGBT MODULE MBN24E7D Spec.No.IGBT-SP-27 R7 P2 4. THERMAL CHARACTERISTICS Iem Symbol Uni Min. Typ. Max. Tes Condiions IGBT Rh(j-c) - -. Thermal Resisance K/W Juncion o case FWD Rh(j-c) Conac Thermal Impedance Rh(c-f) K/W Case o fin. Thermal grease applied. Thickness µm, Thermal conduciviy of grease: W/mK 5. MODULE MECHANICAL CHARACTERISTICS Iem Uni Characerisics Condiions Weigh g 3 Creepage Disance Beween erminal mm 35 Terminal-Base mm 35 Clearance Disance Beween erminal mm 22 Terminal-Base mm 9.5 LS(CM-EM) 2 Collecor-main o Emier-main Sray inducance in LS(ES-EM) nh 3.8 Emier-sense o Emier-main module LS(CM-CS) 6.4 Collecor-main o Collecor sense Terminal Resisance R Terminal mω.9 Collecor-main o Emier-main Comparaive Tracking Index (CTI) 6 Module base plae Maerial Al-SiC Baseplae Thickness mm 5 Insulaion plae Maerial Al N Terminal Surface reamen Ni plaing Case Maerial Poly-Phenilene Sulfide Fire and Smoke Caegory I2 / F3 NFF CIRCUIT DIAGRAM
3 7 56 ) 4 IGBT MODULE MBN24E7D 7. CHARACTERISTICS CURVE 7. STATIC CHARACTERISTICS Spec.No.IGBT-SP-27 R7 P VGE=5V 3V 5 45 Tc=25 VGE=5V 3V 4 V V Collecor Curren IC (A) V Collecor Curren IC(A) V Collecor-Emier Volage (V) 7V Collecor-Emier Volage (V) 7V Collecor Curren vs.collecor o Emier Volage Collecor Curren vs.collecor o Emier Volage 89;:<>=? 89 :@;<>=? 2 5 Vcc=9V IC=24A Tc=25A /. + +,- ) * VGE (V) "! #$% '& ( Forward Volage of free-wheeling diode QG (uc) QG-VGE curve
4 IGBT MODULE MBN24E7D 7.2 DYNAMIC CHARACTERISTICS 7.2. CIRCUIT Ls=55nH Spec.No.IGBT-SP-27 R7 P4 Vcc Rg= LLOAD Vce L VL Ic Ls= VL dic ( db ) =L Cge=22nF WAVEFORM DEFINITION Definiion of Ls Vce 9% Ic Ic 9% Vce.Vce Vce % % r on 3 4 % 2 Vge Vge % 9% 5 7 f off 8 % 6 -Ic Irm IF 9 rr.5irm.if 2 4 Eon(%) CDFE GHDJILKNM 3 2 Eon(Full) C DFEGHDJIOKNM 8 Eoff(%) C DFE GHDJIOKNM 7 6 Eoff(Full) CDFE GHDJILKNM 5 2 Err(%) C PHE GHDJIOKNM Err(Full) C;PHE GHDJILKNM 9
5 QQQ iii jj mmm ccc jj ¾¾¾  [[[ ~~~ ¾¾¾  IGBT MODULE MBN24E7D DEPENDENCE OF CURRENT Q>RTSU V>W XYW SU Z[ \] ^_ `;a;b c];] ^ d;e;e c f ^a;ag;h ij j>^_ k al mj>n j>n ^ `;`;eg;o cnj j>^pq_ a c rrrr g;s ]u vvvv wx'f y;zs Eon(Full) ~ ƒ ˆ Š Œ ;Ž ; ;Š ; ; ; Š ; ; >Š >š >ššœœ; ; N >Š œq ; ž Ÿ ' ; ; ž IC Spec.No.IGBT-SP-27 R7 P5 Turn-on Loss Eon (J/pulse).5 Eon(%) Turn-off Loss Eoff (J/pulse).5 % % VGE Eoff(%)= IC d 6 7 Eoff(full)= IC d 5 Eoff(Full) Eoff(%) IC % % VGE Eon(%)= { IC d Eon(full)= } IC d Collecor Curren Ic (A) Turn-on Loss vs. Collecor Curren Tª«> ª«±² ³ µ; ; ²;² ³>¹ º;º»³ ; ¼;½ ¾ >³ À Á  >à ³µ;µ;º ¼;Ä Ņ >³Åq ; ÆÆÆÆ ¼ Ç È ²É ÊÊÊÊ Ë Ì'» Í;ÎÇ Collecor Curren Ic (A) Turn-off Loss vs. Collecor Curren Tª«> ª«±² ³ µ; ; ²;² ³ ¹;º;º»³ ; ¼;½ ¾ >³ À Á  >à ³µµ;º¼;Ä Ņ >³Åq ÆÆÆÆ ¼ Ç È ²É ÊÊÊÊ ËÌ'»;Í;Î Ç Reverse Recovery Loss Err (J/pulse) IRM.IF IF -IC Err(%)= Ï IF Ð d Err(full)= Ñ IF Ð d 9 Err(full) Err(%) Swiching Time on,r,off,f,rr (us ) off on r rr Forward Curren, IF(A) Recovery Loss vs. Foeward Curren Collecor Curren IC (A) Swiching Time vs. Collecor Curren f
6 999 NNNOO KKK UUU VV ÓÓÓ æææ çç ííí ããã îî CCC ÛÛÛ 88 ÒÒ ÿÿÿ %%% && þþ IGBT MODULE MBN24E7D DEPENDENCE OF RG 2 Ó>ÔTÕ Ö >Ø Ù Ø Õ Ö ÚÛ ÜÝ Þ>ß à;á;â ãý Ý Þ ä å;å ã æ çþà è;å;å é ç ê Þá;á;ëì íî ï î ï Þà;à;å ë ð ã îî ÞñJß á ã ææææ ë;ò ó;ýô õõõõ ö øê ù;ú ò Eon(Full) ÿ!#"$ *& %'& ( & (!#") & +, "-.!/ 2345!- Spec.No.IGBT-SP-27 R7 P6 Eoff(Full) Turn-on Loss Eon (J/pulse) Eon(%) Turn-off Loss Eoff (J/pulse).5 Eoff(%) IC IC.5 % % VGE % VGE % Eon(%)= û IC ü d 3 2 Eon(full)= ý IC ü d Eoff(%)=6 IC 7 d 7 6 Eoff(full)=6 IC 7 d 5 Reverse Recovery Loss Err (J/pulse) Gae Resisance RG ( Ò Ò ) Turn-on Loss vs. Gae Resisance 9 :<;= >?@A?;= B :<;= >?@A?;= BC D E!F G K E!E!F#L!MMK HIJ NO RAFIIST OAFHP!MM!Q K UV#W VV F YZGAI!K FHHMSX NNNN S[A\EA] ^_àrabca[ Err(Full) Err(%). IRM IF -IC 9 2 Err(%)=d IFe Err(full)=f IFe 9.IF 2 d d Gae Resisance RG ( þ þ ) Turn-off Loss vs. Gae Resisance Gae Resisance RG ( 88 ) Recovery Loss vs. Gae Resisance
7 IGBT MODULE MBN24E7D 8. PACKAGE OUTLINE DRAWING Spec.No.IGBT-SP-27 R7 P7
8 ggg hh iii ggg hh iii IGBT MODULE MBN24E7D 9. Thermal Impedance 9. TRANSIENT THERMAL IMPEDANCE. Spec.No.IGBT-SP-27 R7 P8 Thermal Impedance Zh(j-c) (K/W).. Diode IGBT..E-3.E-2.E-.E+.E+ Time (s) Thermal Impedance Cureve (Maximum Value) 9.2 Curve approximaion model!" #!$%& #' () n(igbt) Z h(n,igbt) (K/kW) g h hji h(n,igbt) n(diode) Z h(n,diode) (K/kW) g h hji h(n,diode)
9 IGBT MODULE MBN24E7D Spec.No.IGBT-SP-27 R7 P9. Negaive environmenal impac maerial Please noe he following negaive environmenal impac maerials are conained in he produc in order o keep produc characerisic and reliabiliy level. Maerial Lead (Pb) and is compounds Arsenic and is compounds Conained par Solder Si chip
10 HITACHI POWER SEMICONDUCTORS Noices. The informaion given herein, including he specificaions and dimensions, is subjec o change wihou prior noice o improve produc characerisics. Before ordering, purchasers are advised o conac Hiachi sales deparmen for he laes version of his daa shees. 2. Please be sure o read "Precauions for Safe Use and Noices" in he individual brochure before use. 3. In cases where exremely high reliabiliy is required (such as use in nuclear power conrol, aerospace and aviaion, raffic equipmen, life-suppor-relaed medical equipmen, fuel conrol equipmen and various kinds of safey equipmen), safey should be ensured by using semiconducor devices ha feaure assured safey or by means of users fail-safe precauions or oher arrangemen. Or consul Hiachi s sales deparmen saff. 4. In no even shall Hiachi be liable for any damages ha may resul from an acciden or any oher cause during operaion of he user s unis according o his daa shees. Hiachi assumes no responsibiliy for any inellecual propery claims or any oher problems ha may resul from applicaions of informaion, producs or circuis described in his daa shees. 5. In no even shall Hiachi be liable for any failure in a semiconducor device or any secondary damage resuling from use a a value exceeding he absolue maximum raing. 6. No license is graned by his daa shees under any paens or oher righs of any hird pary or Hiachi, Ld. 7. This daa shees may no be reproduced or duplicaed, in any form, in whole or in par, wihou he expressed wrien permission of Hiachi, Ld. 8. The producs (echnologies) described in his daa shees are no o be provided o any pary whose purpose in heir applicaion will hinder mainenance of inernaional peace and safey no are hey o be applied o ha purpose by heir direc purchasers or any hird pary. When exporing hese producs (echnologies), he necessary procedures are o be aken in accordance wih relaed laws and regulaions. For inquiries relaing o he producs, please conac neares overseas represenaives which is locaed Inquiry porion on he op page of a home page. Hiachi power semiconducor home page address hp://
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