ASCENT Open Access to 14nm PDKs T. Chiarella, N. Cordero, O. Faynot on behalf of the ASCENT teams

Transcription

1 ASCENT Open Access to 14nm PDKs T. Chiarella, N. Cordero, O. Faynot on behalf of the ASCENT teams 11/09/2017 MOS AK ESSDERC 2017 Leuven, BE

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3 Content ASCENT in a nutshell Individual offers description Tyndall Overview Quick look at specific cases Leti Overview Quick look at specific cases Imec Overview Quick look at specific cases Virtual Access Overview and content

4 ASCENT infrastructure ASCENT combines Tyndall, imec and CEA-Leti s nanofabrication & electrical characterisation capabilities into a single research infrastructure and makes it accessible to all

5 Access Provided State-of-the-art 14 nm bulk FDSOI CMOS devices Fabrication facilities for nanowires & 2D materials State-of-the-art 14 nm FinFET CMOS Advanced transistor and interconnect test structures Advanced nanowire and nanoelectrode test structures Advanced transistor and interconnect test structures Electrical & physical characterization platforms Electrical & physical characterization platforms Electrical & nanocharacterisation platforms

6 Offers

7 Tyndall Offer and Inquiries

8 Tyndall s offer-overview Access to Tyndall FlexiFab for non-standard processing Si nano-wire test chips with range of devices Access to Tyndall electrical test labs Access to Tyndall device characterization facilities

9 Tyndall FlexiFab Range of cleanrooms designed for flexible process & product development Silicon MOS Fabrication MEMS Fabrication Compound Semiconductor Fabrication Photonics Fab Training Facility e-beam Lithography Non-standard nano-processing

10 Electrical & Physical Characterisation Labs Open Access Test Lab Nanoscale Test Lab Reliability Test Lab Wide range of test equipment for device and wafer testing e.g.: impedance, capacitance, voltage, current, spectrum analysers, Variable Temperature, Micromanipulator Probe Stations Wide range of test equipment for packaged devices Electron Microscopy Facility Nanoscale Characterisation High Resolution TEM, SEM and FIB, EDAX capability AFM, SEM and electrical characterisation Optical Spectroscopy Labs Raman & Optical Spectroscopy, fluorescence microscopy Magnetic Characterisation Package Characterisation SQUID magnetometer for nano magnetic materials Scanning Acoustic microscope, X-ray analysis

11 Users Completed & running Ascent010-Spain Electrical/physical characterisation of rgo Facilities: metal deposition, elec/phys characterisation Visit Effort/usage: 10 person.day (plan: 9 p.d) Ascent023-Romania Metal-Insulator-Metal diodes Facilities: clean room, AFM, TEM Remote Effort/usage: 16 p.d (plan: 11 p.d) Ascent029-Netherlands Nanowires for monolayer doping Facilities: e-beam lithography, elec. characterisation Remote Effort/usage: 7.5 p.d (plan: 9 p.d) Ascent030-Spain Characterisation of 2D MESFETs (high-k under electrical stress) Facilities: Electrical characterisation Visit Effort/usage: 13 p.d (as planned) Ascent059-Ukraine Low-T hydrogen plasma of III-V MISFETs Facilities: Electrical characterisation Visit Effort/usage: 10 p.d (as planned) Ascent034-Bulgaria Fabrication of nanoscale fingers for SAW tweezers Facilities: e-beam lithography, metal deposition Remote Effort/usage: 9 p.d Ascent044-Italy Molecular doping of Si nanowires Facilities: test chips, elec. characterisation Remote Effort/usage: 9 p.d Ascent046-Greece Metal-oxide heterostructures Facilities: TEM Visit Effort/usage: 10 p.d Ascent048-Slovenia Fabrication of nanoscale comb capacitor Facilities: e-beam lithography, metal deposition Remote Effort/usage: 8 p.d Ascent050-Germany TEM investigation of topological insulators Facilities: TEM Visit + Remote Effort/usage: 10 p.d Ascent055-Japan 2D nanoparticle array Facilities: Physical and optical characterisation Visit Effort/usage: 12 p.d Ascent064-Japan Nanoscale ferroelectrics Facilities: metal deposition, elec. characterisation Visit Effort/usage: 12 p.d Ascent077-Italy Fabrication of High Q-factor Asymmetric Nanobeams Facilities: EBL, Dielectric deposition/etching, SEM Visit Effort/usage: 41 p.d Ascent081-Romania Metal-Insulator-Metal (MIM) diodes fabrication Facilities: metal/dieletric deposition, elec. Character. Remote Effort/usage: 20 p.d Ascent093-India Exchange Bias for Future Memory Devices Facilities: SQUID Remote Effort/usage: 15 p.d India Japan

12 Ascent Spain Electrical/physical characterisation of rgo Facilities: Metal deposition (Ni, Ti, Cr, Au), Elec/phys characterisation Visit Effort/usage: 10 person.day Metal Deposition Electrical Charac.

13 Ascent Romania Fabrication Metal-Insulator-Metal diodes Facilities used: FlexiFab, AFM, Electrical characterisation TEM Remote Effort/usage: 16 p.d TEM AFM Electrical characterisation

14 Leti Offer and Inquiries

15 Cea-Leti s offer-overview 300mm wafers with planar FDSOI and Nanowire devices SPICE models and model cards for digital 14nm FDSOI/10nm FDSOI/10nm FFSOI Electrical & Physical Characterization Capabilities TCAD decks FDSOI MOSFET/Trigate SOI Nanowire GAA Nanowire MOSFET (mainly electrostatics)

16 Leti s Offer Electrical Characterisation Capabilities General purpose I(V)-C(V) 200/300mm testers Temperature range for test on wafers: 2K 600 C Test systems for memories... HF tests up to 40 MHz, Noise measurements Reliability tests: hot carriers, TDDB, charge pumping, Internal Photo Emission Emission microscopy (visible & infrared) Electrical test under calibrated strain High power tests (10kV, >100A) on 300mm prober Deep Level Transient Spectroscopy Electrostatic discharges, Electromigration Oven and climatic environments 450m²

17 Leti s Offer Physical Characterisation Capabilities Available systems and methods Atomic Force Microscopy Dimension AFM Icon/Fast Scan Bruker working under glovebox (O2, H 2 O <1 ppm) High Resolution Transmission Electron Microscopy FEI TECNAI G2 F 20 FEI TITAN THEMIS kv ToF-SIMS ION TOF ToF SIMS 5 Atom Probe Tomography CAMECA FlexTAP Atom probe XRD (X-ray Diffraction) Diffractometer Smartlab RIGAKU 5 circles XPS (X-ray Photoelectron Spectroscopy) Spectrometer/microscope PHI VERSA PROBE II Ellipsometer Ultraviolet-visible ellipsometer HORIBA JOBIN YVON UVISEL

18 Users Completed & running Running: #069: Atom Probe Tomography (Ireland) #070: SIMS depth profiling done on silicon samples to get a doping profile (Ireland) #072: ToF-SIMS (if possible through Leti) on around 15 GaN samples (Ireland) #073: Atom Probe Tomography (Ireland) #074: Wafer and Junctionless device characterization (Greece) 3 Under discussion: #058: Access to PDK, including RF models (Greece) #061: PDK and SPICE model(ireland) #080: XPS and HRTEM characterisation of Al doped ZnO (AZO) (Romania) 1 submitted proposal: #087: Low Frequency Noise Analysis (South Korea)

19 Ascent Spain Access to LETI 300mm wafers with Nanowire devices for characterization and study of advanced nanodevices in the characterization facilities of the Nanoelectronics Lab of UGR. Wafer delivery Metal Deposition

20 Imec Offer and Inquiries

21 Access to Silicon Bulk FinFET Technology Electrical Characterization Capabilities Test chips documentation and data (Virtual Access) FinFET and GAA III/V InGaAs GAA PLANAR Scientific & technical support Imec offer-overview

22 Imec s offer

23 Imec s offer Fin & STI module NFET wells I/I PFET wells I/I Well RTA Dummy gate NFET extension I/I PFET extension I/I Extension RTA NFET SiN dep & etch NFET recess NFET epi PFET SiN dep & etch PFET recess PFET Laser epi anneal ILD0 RMG LI and BEOL N14 test vehicle NFET post epi nm fincd 45nm Fin Pitch CM [BsimCMG] Access to state of the art process technology PFET post epi Device Tilted view Ioff [A/µm] Experiment 1 REF Chiarella et al, ESSDERC 16 Id_sat[µA/µm] State-of-the-art devices with dedicated experiments ready on 300mm Silicon wafers. Main features: Bulk finfet, Replacement Metal Gate, S/D epi with Local Interconnect and silicide-last integration using single metal BEOL

24 Summary of access requests Status project 14nm bulk FinFET wafers for transport parameter and statistical LFN studies #11 Simulation of carrier transport in NW Transistors #43 Characterization of radiation effects in 14 nm bulk Fin [Co source] #54 Investigate the effects of ionizing radiation on 14nm bulk finfet devices [alpha-particles] #75 V.A yes yes yes tbd High-frequency performance FinFET MOS technology for RF circuit design #79 tbd RTN and 1/f characterization on bulk finfet M. Bucher #58 yes

25 PROJECT #11 close look Access requests Access and inquiries 14nm bulk FinFET wafers for transport parameter and statistical LFN studies project #11 V.A yes Initially started as V.A Split in #10 + #11 [V.A + TA] Interactions with user [conf calls/...] 2 WAFERS exchanged [MTA] MTA extended to 6 mo Paper submitted and accepted for icmts2017

26 PROJECT #54 close look Access requests Access and inquiries Characterization of radiation effects in 14 nm bulk Fin [Onera] project #54 V.A yes Required processing of 1 complete module Dicing and wirebonding & packaging needed PRE-POST bonding etest MTA document signature required SHIPPING and requestor s site Samples processed and diced NEXT: Bonding and test before ship Bonding Caveat: Yield of the post-bonding device I-V

27 Virtual Access

28 Available Data Leti FDSOI PDK for Full custom IC design 14nm planar FDSOI technology 10nm planar FDSOI technology (preliminary) imec FinFET and GAA test chip documentation and data (14nm) III/V InGaAs GAA documentation and data PLANAR documentation and data (28nm)

29 Virtual Access V.A Leti V.A data Preliminary PDK for Full custom IC design 14nm planar FDSOI technology 10nm planar FDSOI technology (preliminary) DK for IC demonstrators 28nm FDSOI technology (ST Microelectronics) Near future: PDK 10nm including libraries

30 Virtual Access V.A Imec bulk FinFET data Access to raw data and extracted FoM s Threshold Voltage, Mismatch DC metrics and ID-VD, ID-VG characteristics FEOL/BEOL R/C and Ring-Oscillator circuits ID[A] VG[V] Full sweep data in V.A Covers range of VG/VD and LG/nFin ID[A] Analog FoM, Reliability testing, ESD,... Available for subsequent model validation VG[V] VD[V]

31 FlexiLearn

32 Virtual Access Registered Users Ref User Institute Country 002 G. Angelov T.U. Sofia Bulgaria 006 G. Fatin Univ. Maynooth Ireland 008 A. Durgaryan Synopsys Armenia 022 A. Nejadmalayeri Phoelex Ltd (SME) UK 031 X. Wang Univ. Glasgow UK 035 K. Miyaguchi imec Belgium 036 G. Ghibaudo IMEP-LAHC/INPG France 037 F. Gamiz Univ. Granada Spain 043 M. Karner GlobalTCAD Solutions GmbH Austria 045 T. Kelly EOLAS Designs Ireland 047 A. Pezzotta EPFL ICLAB Switzerland 057 C. Couso Univ. Aut. Barcelona Spain 058 M. Bucher T.U. Crete Greece 062 L. Dobrescu T.U. Bucharest Romania 068 S. Kulkarni Tyndall National Institute Ireland 082 P. Dimitrakis Demokritos Greece 085 Y. Chauhan Inst. Tech. Kanpur India 091 H. Amrouch Karlsruhe Inst. Tech. Germany 092 D. Helms OFFIS Inst. Computer Sc. Germany 098 E. Ranga St. Martin Eng. College India 099 K.A. Shaik imec Belgium 102 T. Hillebrand Univ. Bremen Germany

33 Conclusion Tyndall, Leti and imec provide a wide range of process and test equipment to the ASCENT community Running requests mainly make use of: Standard or custom processing Electrical characterization Physical characterization Virtual access to finfet data or FDSOI library elements Easy to reach & signup!

34 Thank you! Thank you

35 BACKUP

36 User feedback (by ) For what purpose/project did you request access to the ASCENT VA Data? How often have you logged into the ASCENT VA Data repository since you registered? What data have you downloaded? Have you already used the data in your own research and/or modelling activities? Did you find it easy to gain access to the data (log in, location of folders/files, support documents, etc.)? What would you change? How did you find the quality and utility of the data? Is there anything else you would like to have in the repository? Is there any data that you would like to access, but that is not available yet? Any further comments / feedback for the ASCENT administrators regarding the VA data? Any other feedback?

37 Improving the offer and collecting data/outcomes Feedback Form Results vs Planned objectives Things user liked Aspects to improve Suggestions for improvement Data generated To VA Data embargo (if required): 3/6 months Outcomes Conferences, papers, patents MUST acknowledge ASCENT support 6 months later: Update outputs Update on data generates

38 Inquiry for bulk finfet MATERIAL TRANSFER AGREEMENT AVAILABLE If silicon is exchanged with imec, an MTA document is prepared

39 Imec data Imec bulk FinFET data Access to bulk finfet and GAA_SiNW data Integrated dual WFM CMOS LG range 24 nm 90nm within pitch and long channel devices nfin from 2 to 22 Room T available Higher/low T can be considered DOE for contact, layout effects,...