Recent ETHZ-YEBES Developments in Low-Noise phemts for Cryogenic Amplifiers
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1 Receivers & Array Workshop 2010 September 20th, 2010 Recent ETHZ-YEBES Developments in Low-Noise phemts for Cryogenic Amplifiers Andreas R. Alt, Colombo R. Bolognesi Millimeter-Wave Electronics Group (MWE) ETH-Zürich, Gloriastrasse 35, Zürich 8092, Switzerland 1
2 Outline Group and Lab Introduction ETH HEMT Process & Fabrication Device Characteristics YEBES Amplifier Results Conclusion 2
3 Introducing MWE Group Established in 2006 Members (9 Researchers + 1 Prof) 7 Ph.D. Candidates 2 Postdocs 1 Measurement Engineer + 1 Process Engineer Research Areas HEMTs (InP, Group III-N) InP/GaAsSb DHBTs MOCVD (InP, GaInP, GaAsSb) Circuit Design + Characterization 3
4 Introducing ETH / FIRST Cleanroom FIRST Frontiers in Research Space and Time In Operation since m 2 of class State of the Art Equipment Managed by 11 Professors Run by 9 perm. Employees 4
5 Introducing ETH / FIRST Cleanroom Equipment 3 MBEs / MOVPE 2 X-Ray / PL Mapper 2 Zeiss SEMs / AFM 2 Raith 30kV EBLs PECVD / RIEs / ICP / LPCVD / ALD 3 EB-Evaporation / 1 Sputter System Rapid Thermal Annealer CV-Profiler / Hall Effect System Ellipsometer / Alphastep MA6 / MJB3 / DUV Aligners 3 Optical Microscopes Wet Bench Area / Litho Area 5
6 Introducing ETH / MWE Measurement Lab Measurement Tools & Capabilities Vector Network Analyzers ( GHz GHz) Power Analysis ( GHz) Spectrum Measurements up to 90 GHz Antenna Measurements Noise Figure Measurements up to 75 GHz Noise Parameters up to 20 GHz Up to 50 GHz by End of 2010 Multiharmonic Load-Source Pull by End of
7 Introducing ETH / MWE Cryo Lab On-Wafer Calibration System Open-Cycle Cryostat Vacuum Level: <10-6 Torr Temperature Range: 5 K to 400 K (±0.1K) PID Temperature Controller Temperature Sensors: Si Diode (Chuck) and Pt Thermometer (Probe Arm) Feedthrough: RF Cables (K- and 2.4mm-connector) DC Wires/Cables (10 pin) Probes Cryogenic RF Probes (K- and 2.4mm connector) Multi-Contact-Wedge Probe (9 pin) 7
8 Introducing ETH / MWE Cryo Lab Cryo Dewar System Temperature Range: 10 K to 400 K Feedthrough: 4 RF Cables (SMA-connectors) 2 DC Wires/Cables (16 pin) Probes Any Probe Type Fitting on the Copper Plate (Ø17cm x 10 cm) 8
9 Outline Group and Lab Introduction ETH HEMT Process & Fabrication Device Characteristics YEBES Amplifier Results Conclusion 9
10 ETH HEMT History 1991 Development of 0.25µm ETH AlInAs/GaInAs/InP HEMT Transistor-Process by C. Bergamaschi under Prof. Bächtold 1998 First ESA-Project Involving ETH-HEMTs and YEBES for Design & Fabrication of X-Band Amplifier Process Transfer from In-House Cleanroom to FIRST Currently: ESA Ka-Band Amplifier Project with ETH Devices and YEBES for Amplifier Design & Fabrication (S. Halté) 10
11 ETH InP HEMT Work Today Evolve Conventional AlInAs/GaInAs/InP HEMT Technology InAs Channel Insets Without Antimonide Related Problems Aluminum Free GaInP/GaInAs phemt Concept for Improved: High-Frequency Power Performance Reliability LF-Noise Cryo Performance Breakdown Behavior Improved Etch-Selectivity of GaInAs/GaInP (Recess) 11
12 Aluminum free HEMT Concept Goal: Eliminate AlInAs from HEMT-Epi 12
13 Al-Free InP phemts Motivation: AlInAs Can Be Chemically Unstable Traps Present (Residual Oxygen) Device Instabilities/Non-Idealities (e.g. Kink, Light Sensitivity, etc.) Reliability Limiter InP Buffer Layer Advantages Al-Free 10x Higher Thermal Conductivity wrt Alloys Old Idea: Explored by K. Heime in 1990 s f T = 150 GHz Claimed to Offer Lower Noise than AlInAs/GaInAs HEMTs Did Not Gain Acceptance 13
14 Al-Free InP phemts (ETH-Grown) f MAX > 600 GHz (100 nm) Peak f T Bias: f T = f MAX = 250 GHz Peak f MAX Bias: V DS = 1.5 V f T = 200 GHz / f MAX = 602 GHz Non-Optimized Layers on InP:Fe µ = 8,300 cm 2 /Vs N s < 1 x /cm µm x (2 x 75 µm) L SD = 2 µm The GaInP/GaInAs Al-Free phemt on InP:Fe is Very Promising! 14
15 Typical Device Fabrication Process Ohmic Contacts substrate Ge/Au Annealed Contacts: <0.1 Ωmm Device Isolation Phosphoric Acid Based Solutions Gate Recess Organic Acids T-Gates nm Ebeam T-Gates + SiN x Passivation Metallization Overlay Metallization Electroplating Airbridges +Thick Pad-Metal Followed by Thinning to 100µm + Dicing 15
16 InP phemt with L G = 100 nm Electron Beam Lithography 30 nm T-Gate in ZEP-Based Tri-Layer Raith150-Two: Installed End
17 Nanometric Gates 17
18 6 Finger Air-Bridge Device InP phemt (0.1µm x 100µm) 18
19 6 Finger Air-Bridge Device 19
20 Outline Group and Lab Introduction ETH HEMT Process & Fabrication Device Characteristics YEBES Amplifier Results Conclusion 20
21 DC Device RT 21
22 DC Device RT 22
23 DC Device RT 23
24 RF Device RT Bias Sweep Without Removing Pad-Parasitics! 0.1µm x 150µm 24
25 RF Device RT Bias Sweep Without Removing Pad-Parasitics! 0.1µm x 150µm 25
26 DC Device 15K 26
27 DC Device 15K 27
28 DC Device 15K Impact Ionization (V DS 1V 28
29 Effect of Temperature on DC 29
30 Effect of Temperature on DC 30
31 RF Device 15K Bias Sweep Without Removing Pad-Parasitics! 0.1µm x 150µm 31
32 RF Device 15K Bias Sweep Without Removing Pad-Parasitics! 0.1µm x 150µm 32
33 RF Device 15K RF Data Without Removing Pad-Parasitics! F T of V V DS, 0.2V V GS 31mA I DS, 0.12nA I GS 33
34 RF Device 15K RF Data Without Removing Pad-Parasitics! Typical Low-Noise Bias 0.3V V DS, 0.05V V GS 4.3mA I DS, 0.014nA I GS F T = 156 GHz 34
35 Processing Impact on Device Characteristics A Single Process Step Can Have a Dramatic Impact on Gate Leakage! (Everything Else Kept the Same) 35
36 Processing Impact on Device Characteristics A Single Process Step Can Have a Dramatic Impact on Gate Leakage! (Everything Else Kept the Same) 36
37 Processing Impact on Device Characteristics In this Experiment the Processing Change Solely Influenced the Gate Leakage which is a Key Factor for the Noise Performance! 37
38 Outline Group and Lab Introduction ETH HEMT Process & Fabrication Device Characteristics YEBES Amplifier Results Conclusion 38
39 Result Considerations CRYO3 is Considered the Best Transistor Ever Measured Devices Presented Here are not Yet Optimal : Source-Drain Distance is 2µm; Better Performance Expected for 1µm Noise Characterization Over GHz by YEBES YEBES Used ETH Devices in the First Stage of their YK Amplifier, Comparing Against HRL and NGST Devices 39
40 YEBES Amplifier 300K CRYO3 HRL 40
41 YEBES Amplifier 15K HRL CRYO3 41
42 ETHZ-YEBES Measurement Results Noise Results Obtained with ETH Devices Almost Reach CRYO3 The Average in-band Noise is Slightly Higher than CRYO3 The Minimum Noise is in Some Cases Slightly Better than CRYO3 Gain is Significantly Higher for ETH Devices Very Low Gate Leakage at Cryogenic Temperatures 42
43 Outline Group and Lab Introduction ETH HEMT Process & Fabrication Device Characteristics YEBES Amplifier Results Conclusion 43
44 Conclusion ITAR Complicates HEMT Procurement Outside US ETHZ Technology as EU Source of High-Performance Devices Radio-Astronomy & Deep Space Network Telecommunications Research Applications MWE / ETH Interested in Collaborative Projects Secure/Expand EU Source for Strategic Technology Extend Technological Limits 44
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