mhemt based MMICs, Modules, and Systems for mmwave Applications Axel Hülsmann Axel Tessmann Jutta Kühn Oliver Ambacher
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1 mhemt based MMICs, Modules, and Systems for mmwave Applications Christaweg Freiburg, Germany Axel Hülsmann Axel Tessmann Jutta Kühn Oliver Ambacher Tullastraße Freiburg, Germany
2 About OndoSense GmbH founder: background: OndoSense: Dr.-Ing. Mathias Klenner (CEO) Bernhard Schöne-Remmeau (CFO) Dr.-Ing. Axel Hülsmann (CTO) Dr. Klenner und Dr. Hülsmann have been with Fraunhofer- IAF for many years working on applied research on millimeter wave sensorics on the basis of III/V-semiconductors. Bernhard Schöne-Remmeau is an industrial engineer from University Kaiserlautern. OndoSense has been founded in March 2018 to develop, to produce, and put on the market cost efficient millimeter wave sensors partially based on high performance MMICs from Fraunhofer-IAF. OndoSense is supported by University of Freiburg and Fraunhofer- IAF by Prof. Oliver Ambacher (INATECH) and funded by the grand program EXIST supported by the European Social Fund and the German ministry of economics. 2
3 About Fraunhofer - IAF founded: 1957 staff: 280 funding: 28 million / year labs and offices: m² clean room: 1000 m2 The Fraunhofer Institute for Applied Solid State Physics (IAF) is a science and technology center in the field of micro- and nano-patterned compound semiconductors and diamond 3
4 About Fraunhofer Society Largest organization for applied Research in Europe headquarter in Munich Founded in locations 25,000 employees 2 B research budget Fraunhofer funding model: 1/3 basic, 1/3 project, 1/3 industry
5 Outline: mhemt MMICs Modules Systems metamorphic buffer Application
6 Epitaxy of metamorphic HEMT structures 100 nm gate length: 65 % In content n s = cm -2 µ e = cm 2 /Vs 50 nm gate length: 80 % In content n s = cm -2 µ e = cm 2 /Vs
7 HEMT (High Electron Mobility Transistor) Channel material source gate drain f T v sat, eff 2πL g Gate length L g S barrier d D Channel v sat,eff [10 7 cm /s] f T 0.1 µm channel (2DEG) gate length GaAs Lattice matched on GaAs (AlGaAs/GaAs) HEM substrate In 0.25 Ga 0.75 As In 0.53 Ga 0.47 As Strained on GaAs (AlGaAs/InGaAs) phemt Lattice matched to InP (AlInAs/InGaAs) mhemt Small gate length and high electron velocity enable high f T Relaxed on GaAs (AlInAs/InAs) enhanced mhemt Relaxed on GaAs (AlSbAs/InSb) advanced mhemt 7
8 Equivalent Circuit Model for mhemts Covers wide bias range and frequency range Scalable with gate width, variable finger number Proper noise description Temperature dependence
9 Development of InGaAs/InAlAs mhemt Technology mhemt - metamorphic HEMT with InGaAs channel on GaAs substrate L G = 100 nm f T /f max = 220/300 GHz 50 nm 375/600 GHz 35 nm 515/900 GHz 20 nm f T = 660 GHz (Leuther et al. IPRM 2011)
10 LNA MMICs Technology gain 94 GHz noise 94 GHz gain 210 GHz noise 210 GHz 50 nm nm nm technology achieves record noise 94 and 210 GHz
11 The Art of Device Modelling above 100 GHz Capacitve shell Resistive shell Inductive shell Gate feed Intrinsic core Drain feed
12 The Art of Device Modelling above 100 GHz Having n-elements to fit my model, I can simulate an elephant With n+1 Elements, I can even wave with the trunk Think about physical plausibility
13 The Art of Device Modelling above 100 GHz Discrete distributed equivalent circuit Two gate finger FET Common source configuration
14 The Art of Device Modelling above 100 GHz On-Wafer VNA s-parameters up to 750 GHz Temperature controlled calibration Calibration test set (short, open?, through, 50 Ohm) Device test structures with different gate width and different reference planes Grounded probe pads Identification of the reference plane S-Parameter measurements on several devices distributed on wafer S-Parameter measurements on different wafers and batches Small signal shell model (drain and gate as open stubs!) Verification model <-> measurement 2-port
15 Modelling of a 5-stage LNA with 50nm mhemts
16 Outline: mhemt MMICs Modules Systems Application
17 50nm mhemt MMIC Process on 4 GaAs Wafers MMIC Monolithic Microwave Integrated Circuit METG SiN MET1 OHM GATE MESA MET1 SiN NiCr SUBSTRATE Au Two metalization layers 2,7 µm gold air bridges 225 pf/mm 2 MIM capacitors 50 / NiCr resistors 250 nm CVD SiN passivation Full wafer-size backside process Microstrip technology and grounded coplanar waveguide
18 mhemt based MMIC for THz Frequencies Rx, Tx GHz LNA GHz nm atmospheric attenuation [db/m] E-3 35 nm 50 nm 100 nm MMIC S-MMIC TMIC Multiplier GHz 1E-4 1 bar, 20 C, 43.4% RH Multiplier GHz frequency [GHz] Multiplier GHz
19 Two-Stage W-Band Low-Noise Amplifier MMIC 25 5 gain [db] gain NF NF [db] Frequency [GHz] Reactively matched Cascode mhemts Gate length 50 nm Gate width 4 15 µm Chip-size mm 2 Gain > GHz Noise figure 2 T = 293 K Power consumption 48 mw V d = 1.6 V, I d = 30 ma
20 Ultra-Broad-Band Millimeter-Wave Amplifiers 20 nm S-Parameters [db] [db] S 21 S 11 S Frequency Frequenz [GHz] 35 nm mhemt technology 4-stage cascode low-noise amplifier Chip size mm 2 Gain > 20 db ( GHz) Noise figure 6.9 db (Simulation) Power dissipation 50 mw
21 220 GHz Transmitter and Receiver MMICs for Ultra-High-Speed Data Link Fully integrated mmw ICs Very broadband IF Identical chip layout eases module integration MMIC size mm 2 RF IF mixer IF mixer X2 X2 LO RF LO
22 300 GHz Radar Chip Set for SAR Imaging Systems Chip set for miniaturized Synthetic Aperture Radar (SAR) 40 GHz bandwidth for ultra-high resolution
23 630 GHz Amplifier MMIC 35 nm gate length metamorphic HEMTs 6-stage common source amplifier 12 db small-signal 630 GHz Compact coplanar design Chip size only mm 2 Record value (IAF, NGC/USA)
24 Multifunctional Integration: 94 GHz FMCW Radar MMIC Oscillator IN Oscillator Mixer Phase MW IN Phase LNA Mixer LNA MW IN f IF = f TX f RX f IF = f TX f RX 6 GHz Bandwidth 10 dbm Output power Transmit and receive signal separation on-chip Current supply 2V
25 Outline: mhemt MMICs Modules Systems Application
26 Packaging Technologies for Millimeter-Wave Modules GHz frequency multiplier-by-6 W-band 4-channel heterodyne receiver 94 GHz FMCW radar on-board patch antenna 300 GHz amplifier Batch production of RF modules for partners (e.g. ESG)
27 W-Band Power Amplifier Module DC supply M8 connector WR-10 out 3) Waveguide to MPA transition 5) PA MMIC 6) MPA MMIC 11) Quartz microstrip line 12) Quartz bias sub-mount PA 13) Quartz bias sub-mount MPA
28 W-Band HPA Module Measurements
29 Modules with Integrated Antennas S-Parameters [db] [db] S 22 S 11 S Frequency Frequenz [GHz] Integrated Antennas (laser structured) on GaAs substrate Chip size 0,5 1,2 mm 2 Maximum gain GHz Gain > 14 db ( GHz)
30 Outline: mhemt MMICs Modules Systems Application
31 220 GHz Wireless Communication: >25 Gbit/s Data Link World record wireless data rate 20 m 10 m NRZ-OOK PRBS 30 Gbit/s data transmission demonstrated (DVD in 1.25 sec, 2307 TV channels, 1875 DSL16000)
32 Cryo LNAs for Allen Telescope Array Integrated antenna frontend and cryogenic cooling system Operating temperature ~ 60 K Balanced GHz LNA Processing 100 nm mhemt: IAF Design: Low Noise Factory (Sweden) Packaging: Low Noise Factory Allen Telescope Array Hat Creek, Cal.
33 Cryogenic mhemt 100 nm mhemt devices reduced gate resistance reduced sheet resistance R Contact (m mm), R Sheet ( /sqr) slightly increased contact resistance R Gate 60 R Contact Temperature R Sheet R Gate ( /mm)
34 Cryogenic GHz LNA 12 K Noise 22 GHz Hybrid 3-stage GHz LNA (Yebes) first stage 100 nm 4 x 40 µm mhemt noise temperature comparable with InP Noise Temperature (K) Noise 5 Gain Frequency (GHz) T = 20 K Gain (db)
35 Cryogenic 4 8 GHz LNA Noise Temperature (K) T = 10 K Gain Noise Frequency (GHz) Gain (db) Hybrid 4 8 GHz LNA (Chalmers) first stage 100 nm 4 x 40 µm mhemt 3 K noise 5 GHz
36 Allen Telescope Array Project of SETI Institute and UC Berkeley Location: Hat Creek, California Design: 350 antennas with 6.1m Source: MTT-S 2005 Workshop Very Large Microwave Arrays for Radio Astronomy and Space Communications
37 Outline: mhemt MMICs Modules Systems Application
38 Millimeter-Wave Integrated Circuits Enable Innovative Applications Climate research Life sciences Security and safety Earth observation Communication
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