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1 Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si Authors: Yi Sun 1,2, Kun Zhou 1, Qian Sun 1 *, Jianping Liu 1, Meixin Feng 1, Zengcheng Li 1, Yu Zhou 1, Liqun Zhang 1, Deyao Li 1, Shuming Zhang 1, Masao Ikeda 1, Sheng Liu 3 and Hui Yang 1 Affiliations: 1 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou , China 2 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan , China 3 School of Power and Mechanical Engineering, Wuhan University, Wuhan , China *Correspondence to: qsun2011@sinano.ac.cn This file contains: 1. The fabrication process of the GaN-on-Si laser 2. The optical confinement of the GaN-on-Si laser 3. The statistic measurement results of the threshold current of the as-fabricated devices References NATURE PHOTONICS 1
2 1. The fabrication process of the GaN-on-Si laser Figure S1: Schematic diagram illustrating the fabrication process of the GaN-on-Si LDs. a, An LD epitaxial structure was grown on Si substrate by MOCVD. b, Ohmic contact metal stack Pd/Pt/Au was sputtered on the p-contact layer of the wafer followed by a thermal annealing. c, Dry etching and lithography process were used to form the ridge structure and expose the n-type GaN layer. d, SiO2 isolation layer was deposited on the surface of the wafer leaving the ridge top and the n contact pad window open. e, P and N contact metal were evaporated onto the ridge and the n-type GaN to form P and N contact pads, respectively. f, The wafer thickness was reduced to around 90 μm by thinning, lapping, and chemical mechanical polishing (CMP) of the Si substrate before cleavage. 2 NATURE PHOTONICS
3 Figure S2: Facet cleavage of GaN-on-Si LDs for cavity mirror formation. a, In-plane angular relationship of the cleavage planes between GaN epitaxial layer and Si substrate. b, SEM image of the cleavage facet for a GaN-on-Si LD. The LD fabrication process details are schematically shown in Fig. S1. After the growth of the LD structure on Si substrate (Fig. S1a), a metal stack of Pd/Pt/Au (30 nm/30 nm/50 nm) was firstly sputtered on top of the p-contact layer (Fig. S1b), followed by a thermal annealing at 600 C for 90 seconds in a compressed air ambient. Then, lithography and ion-beam etching were employed to form a 4 μm 800 μm ridge structure and to expose the n-type GaN layer (Fig. S1c). Subsequently, SiO2 was deposited on the surface of the wafer as an insulation layer with the ridge top and the n contact pad window left open by a lift-off process (Fig. S1d). Finally, Ti/Pt/Au (50 nm/100 nm/500 nm) metal stack was evaporated onto the ridge and the n-type GaN layer as p-type and n-type contact pads, respectively (Fig. S1e). After finishing all the fabrication processes at wafer surface, we thinned the Si substrate down to around 90μm, together with lapping and CMP (Fig. S1f). The cavity mirrors of the GaN-on-Si LDs were obtained by facet cleavage. It is noted that the cleavage direction [110] of Si(111) substrate coincides with [1120] of GaN epitaxial film (Fig. S2a), and an atomically smooth facet can be achieved for a GaN-on-Si LD through a simple cleavage (Fig. NATURE PHOTONICS 3
4 S2b). To achieve a direct integration of LD on Si, cavity mirrors can also be formed by an optimized dry etching of GaN with a limited roughness. Highly reflective coatings consisting of three and seven pairs of quarter-wave TiO2/SiO2 dielectric multilayers were deposited onto the front and the back facets, respectively, to reduce the mirror loss and the threshold current. The estimated reflectivity of the front and the back coated facets were ~70% and ~95%, respectively. After mounting the chips on to a copper heat sink by using indium solder, the L-I-V characteristics of the as-fabricated GaN-on-Si LDs were measured under both pulsed and CW current injection at room temperature (RT). 2. The optical confinement of the GaN-on-Si laser Figure S3: Simulated electric field distribution of the as-fabricated GaN-on-Si LD and the NFP observation for GaN-on-Si LDs. a, Refractive index profile along the growth direction as a function 4 NATURE PHOTONICS
5 of distance from the Si substrate (bottom axis), which gives a contrast of refractive index for optical confinement. The calculated electric field (top axis) shows strong optical confinement around the active region. Below 0 μm is the Si substrate and above 5.8 μm is air. b, Simulated electric field distribution for the as-fabricated GaN-on-Si LD structure. c and d, Cross-sectional NFPs of the GaN-on-Si LD observed below the threshold (30 and 120 ma, respectively). e, NFP observed above the threshold (160 ma). Figure S3a shows the refractive index profile along the growth direction and the calculated optical field distribution for the as-fabricated GaN-on-Si LD. It is noted that with a slightly higher average Al composition for the upper cladding layer, the effective refractive index of the upper cladding layer is lower than the lower cladding layer, which causes the optical field to lean towards the n-type layers. This design helps to reduce the optical internal loss caused by the strong absorption by the Mg-doped layers above the active region. Based on the structure of the GaN-on-Si LD, the electric field distribution at the facet was simulated by the beam propagation method, as shown in Fig. S3b. With a careful design of the waveguide and cladding layers, we can see that most of optical field was confined within the active region and the cladding layers, avoiding the strong absorption of the stimulated photons by Si substrate. Cross-sectional NFPs of one as-fabricated GaN-on-Si LD with coating were observed by using an optical microscope from the front facet at the current injection below (Fig. S3, c and d) and above the threshold current (Fig. S3e). When the injection current reached the threshold current, strong stimulated emissions were clearly observed from the front facet under the ridge structure. It should be noted that for the as-fabricated GaN-on-Si LDs, the NFPs did not extend to the Si substrates at any current, NATURE PHOTONICS 5
6 indicating that with the presence of the cladding and waveguide layers, the strong absorption of the Si substrates did not affect the optical quality of the stimulated emissions. This is consistent with the previous simulation and calculation above. Figure S4: Typical FFP divergence angles of the GaN-on-Si LDs measured along the latitudinal and the longitudinal directions at an injection current above the threshold current. To study the asymmetry of the FFP of the as-fabricated GaN-on-Si LD, we measured the output light intensity along the latitudinal (Fig. S4, dashed line) and the longitudinal directions (Fig. S4, solid line) at an injection current of 6% above the threshold current. The measurement was carried out under a pulsed condition (pulse width of 400 ns and a repetition rate of 200 khz) at RT. The normalized light output intensity was plotted as a function of the measurement angle. The FWHM of the plots for the latitudinal and longitudinal directions were 6 and 21 degree, respectively, giving an aspect ratio of 3.5, which are comparable to the reported data of InGaN-based LDs 1-3. Only fundamental transverse mode was observed for our GaN-on-Si LD devices, serving as a signature of edge-emitting LDs. 6 NATURE PHOTONICS
7 3. The statistic measurement results of the threshold current of the as-fabricated devices Figure S5: Optical microscope images of the as-fabricated GaN-on-Si LDs and statistic results of the lasing threshold current. a, Top-view optical microscope image of a bar of GaN-on-Si LDs after cleavage. Part of the dielectric coatings can be seen at both the front and the back facets. b, Enlarged image of one as-fabricated GaN-on-Si LD. c, Statistic results of the lasing threshold current for the asfabricated GaN-on-Si LDs. Fig. S5, a and b show the top-view microscope images of one bar of as-fabricated GaN-on-Si LDs and one enlarged device, respectively. In order to evaluate the yield and the reproducibility, we measured 120 devices on twelve bars of as-fabricated GaN-on-Si LDs from the same epitaxial wafer. Figure S5c shows the statistic results for the threshold current of the GaN-on-Si LDs. The measurement was performed under pulsed current injection (pulse width of 1 μs and repetition rate of 10 khz). 113 devices (94%) of the measured GaN-on-Si LDs could lase. The lowest and average threshold current for the as-fabricated GaN-on-Si LDs were 140 and 352 ma, corresponding to a threshold current NATURE PHOTONICS 7
8 density of 4.4 and 11 ka/cm 2, respectively. These results exhibit a decent yield of the as-fabricated GaN-on-Si LDs. Future work is underway to further improve the yield and tighten the distribution. REFERENCES: 1. Nakamura, S., Senoh, M., Nagahama, S. I., Iwasa, N., Yamada, T. Characteristics of InGaN multi-quantum-well-structure laser diodes. Appl. Phys. Lett. 68, (1996). 2. Nakamura, S. et al. Room-temperature continuous-wave operation of InGaN multi-quantumwell-structure laser diodes with a long lifetime. Appl. Phys. Lett. 70, (1997). 3. Tsuyoshi, T. et al. GaN-Based High Power Blue-Violet Laser Diodes. Jpn. J. Appl. Phys. 40, 3206 (2001). 8 NATURE PHOTONICS
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