77 GHz VCO for Car Radar Systems T625_VCO2_W Preliminary Data Sheet

Transcription

1 77 GHz VCO for Car Radar Systems Preliminary Data Sheet Operating Frequency: GHz Tuning Range > 1 GHz Output matched to 50 Ω Application in Car Radar Systems ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Package Q62702-G172 Chip The is a voltage controlled millimeter wave oscillator MMIC, suitable for signal generation in modern, MMIC-based car radar systems. It is intended to be used in PLL stabilized radar transceivers, especially for FMCW radar systems. The MMIC will be delivered with wirebond compatible pads. To ease substrate design, the MMIC s layout can be provided in dxf- or gds2-format. Circuit Description The incorporates a two-stage, PHEMT - based amplifier (130 nm gate length) and an electrically tunable feedback loop. By adjusting the control voltage V Tune of the phase-shifting elements in the feedback loop, the frequency of the oscillator is controlled. Phase Shifter Voltage Divider 4 φ Two-Stage Amplifier λ /4 - Transformer Wilkinson Power Divider Tunung Voltage RF Output EHT09284 Figure 1 Circuit Description Data Sheet

2 9 RF OUT VCO77CR VTU VG1 VD1 VG2 VD2 Infineon EHT09285 Figure 2 Pin Configuration Pin Configuration Pad Symbol Function 1 V Tune Tuning Voltage 2 V G1 Gate Voltage 1 st PHEMT Amplifier Stage 3 GND Chip DC Ground 4 V D1 Drain Voltage 1 st PHEMT Amplifier Stage 5 V G2 Gate Voltage 2 nd PHEMT Amplifier Stage 6 GND Chip DC Ground 7 V D2 Drain Voltage 2 nd PHEMT Amplifier Stage 8 GND Chip DC Ground 9 RF OUT Coplanar RF Output, matched to 50 Ω Typically 46 µm RF Signal Pad Width, 37 µm Gap to GND Pads RF Probing: Use 100 to 120 µm Ground Signal Ground Pitch. RF Ground is de-coupled from DC Ground, max. insulation voltage: 5 V. The bias pads (1-8) have 150 µm pitch. Data Sheet

3 Characteristic - General and DC Parameter Symbol Typ. Value Unit Ambient Temperature T amb 40 to C Drain Supply Voltage, 1 st Stage V D1 3.5 V Gate Supply Voltage, 1 st Stage V G1 0.3 V Drain Supply Current, 1 st Stage I D1 16 ma Drain Supply Voltage, 2 nd Stage V D2 3.5 V Gate Supply Voltage, 2 nd Stage V G2 0.3 V Drain Supply Current, 2 nd Stage I D2 16 ma Chip s backside mounted on a metal heatsink. Characteristic - RF Parameter Symbol Typ. Value Unit Usable Tuning Range f Tune 76 to 77 GHz RF Output Power in Tuning Range P OUT > 5 dbm Phase Noise (free running) L Ph,free 75 1MHz Tuning Voltage V Tune 1 to + 1 V Maximum Tuning Slope ) S Tune 3 GHz/V Minimal Tuning Slope S Tune 1 GHz/V Tuning Port Input Impedance Z Tune > 500 Ω The given parameters assume 50 Ω RF load impedance and an ambient (= chip s backside) temperature of T amb = 25 C. The chip s backside is mounted on a metal plate. Chip thickness is 100 µm. The is intended for wire bonding only. Flip chip mounting with stud bumps will lead to a shift in center frequency. Samples ready for flip chip mounting with stud bumps are available on request. Data Sheet

4 Geometry Parameter Symbol Typ. Value Unit Chip Thickness d Chip 100 µm Chip Outline A Chip mm 2 Bond Pad Size DC A BondpadDC µm 2 Bond Pad Pitch DC DC Pitch 150 µm Bond Pad Size RF A BondpadRF µm 2 Bond Pad Pitch RF CPW Pitch 120 µm RF Probing: Use G-S-G Probes with 100 to 120 µm Pitch. Recommended Bonding Conditions Parameter Nailhead, no ultrasonic 2) See Mil 883, > 2 g Thermal Compression Wedge Bonding Chuck Temp C Tool Temp C Scrub 100 Hz Bond Force g Wire Diameter µm Bond Pull Test ( 2.5 2) Bond Pull Test (2) 3.1 2) g Bond Pull Test (3) 3.2 2) g Bond Pull Test (4) 3.0 2) g Bond Pull Test (5) 2.8 2) g Unit g Data Sheet

5 Application Note: Infineon Semiconductors in Modern ACC Radar Systems Infineon provides a variety of car radar products to simplify the design of modern, MMICbased car radar systems: V Tune 77 GHz VCO RF 77 GHz Amplifiers 2 x T626_MPA2_W Transceive Mixer 2 x BAT14-077D Antenna +14 dbm RF Infineon PLL Module ACC_PLL_1 Sweep Control IF 1 GHz 5th Harmonic Mixer BAT14-077D LO 15.1 GHz Low Noise Ref. Oscillator ACC_DRO15.1_1 IF khz typ. IF Processing and Sweep Control: TM Infineon TriCore DSP-Controller EHT09246 Figure 3 Principle of a Modern one-beam, MMIC-based FMCW Radar System Data Sheet

6 T626_MPA2_W BAT14-077D ACC_DRO15.1_1 ACC_PLL_1 TriCore PHEMT-based GHz, two-stage voltage controlled oscillator (VCO) GaAs MMIC with + 5 dbm output power. PHEMT-based GHz, two-stage medium power amplifier (MPA) with max dbm RF output power and 10 db smallsignal gain at 76.5 GHz. Silicon-based dual Schottky diode for millimeter wave receive mixer applications, 12 db conversion loss, low 1/f corner frequency, very low noise. Ultra-low phase noise ( khz) dielectric resonator oscillator (DRO) module as stable frequency reference with excellent short-term and long-term stability. Pre-tuned to 15.1 GHz. Phase locked loop (PLL) module for the generation of ultra-linear frequency sweeps in FMCW radar systems. Typical deviation from a 200 MHz RF sweep at 76.5 GHz is less than 20 khz. Maximum sweep bandwidth: 450 MHz, modulation rate 500 GHz/s. User control by simple digital interface or by an external data generator. TriCore microcontroller with two fast, synchronous A/D converters. Especially suited for signal processing and sweep control. Contact Infineon for more information and design support. Data Sheet

7 Application Note: Biasing of Infineon PHEMT-Based Car Radar MMICs Infineon car radar MMICs provide on-chip blocking capacitors, capable to reduce bias oscillations down to 1 GHz. For save operation below 1 GHz, a bypass capacitor of 470 to 330 pf should be connected from each MMIC gate terminal to an on-chip ground pad. The capacitor should have low ESR up to 1.5 GHz. Keep leads as short as possible. Drain Terminal Gate Terminal V G External Bypass - Cap pf Recommended V D EHT09247 Figure 4 DC-Blocking of drain terminals is normally not necessary and might lead to bias oscillations induced by feedback via common ground lead inductance. Combination of drain and gate terminals should be done by series resistors of 5 to 10 Ω. To compensate for temperature effects, an active bias controller with positive temperature coefficient (e.g. Infineon BCR 400W) can be used. Data Sheet