Semiconductor Process Reliability SVTW 2012 Esko Mikkola, Ph.D. & Andrew Levy
|
|
- Evan Harrington
- 5 years ago
- Views:
Transcription
1 Semiconductor Process Reliability SVTW 2012 Esko Mikkola, Ph.D. & Andrew Levy 1
2 IC Failure Modes Affecting Reliability Via/metallization failure mechanisms Electro migration Stress migration Transistor failure mechanisms Time-dependent dielectric breakdown (TDDB) Hot carrier degradation NBTI and PBTI 2
3 IC Failure Modes Affecting Reliability Failure Mode Physics System Effect NBTI (PMOS) / PBTI (NMOS) TDDB Negative V t shift Slower speed Soft Breakdown: Slower speed Weakened gate oxide Increased leakage current Hard Breakdown/Punch through Timing Faults in Processors Resettable but increasing severity over time Increased ESD Vulnerability Non resettable timing faults Catastrophic Short Hot Carrier (NMOS) Metal Migration (Stress migration, electromigration) Positive V t shift Change in sub threshold swing Higher resistance in Via connections Open circuits Increased Off state power Increased current draw Decreased data retention time in DRAM Catastrophic Open 3
4 Electromigration Stress Migration Electromigration Transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms. Known for more than 100 years, but became of practical interest with the advent of Semiconductor technologies Effects are occurring primarily at the boundaries and material interfaces Cu is intrinsically less sensitive to EM than Al but scaling and increasing current densities are pushing the limits Stress Migration Results from tensile stress due TCE mismatch of materials Stress relaxation over time through diffusion of vacancies leads to the formation of voids 4
5 Via/Metallization Failure Mechanisms 5
6 Electromigration (physical mechanism) 6
7 Electromigration (temperature dependency) Reported data from fast Wafer Level Reliability (fwlr) tests shows that every 50 C increase in the stress temperature will reduce the electromigration testing time by one order of magnitude. Ki Don Lee, et al., VIA PROCESSING EFFECTS ON ELECTROMIGRATION IN 65 NM TECHNOLOGY, 44th Annual International Reliability Physics Symposium, San Jose,
8 Transistor Failure Mechanisms MOS transistor 8
9 Transistor Failure Mechanisms 9
10 Time Dependent Dielectric Breakdown Failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposite to immediate breakdown, which is caused by strong electric field). The breakdown is caused by formation of a conducting path through the gate oxide to substrate due to electron tunnelling current, when MOSFETs are operated close to or beyond their specified operating voltages. 10
11 Time Dependent Dielectric Breakdown (TDDB) TDDB influenced by: Smaller Geometry More Tunneling Thinner Oxides (Tox) Substrate Injection (NMOS) Effects: Increased Noise Increased Power Switching characteristics Eventual wear-out and failure 11
12 TDDB (types of breakdown) 12
13 TDDB (types of breakdown) 13
14 TDDB (DC stress vs. AC stress) 14
15 Hot Carrier Injection (HCI) Degradation A phenomenon in which an electron or a hole gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state. To become hot and enter the conduction band of SiO2, an electron must gain a kinetic energy of 3.3 ev. For holes, the valence band offset in this case dictates they must have a kinetic energy of 4.6 ev. The term "hot electron" comes from the effective temperature term used when modelling carrier density and does not refer to the actual temperature of anything. High temperatures caused by the effect are unrelated to the phrase "hot electron effect". Carrier is injected from channel into gate dielectric Effects include heating of the device and increased leakage current Heating is caused by hot electrons giving off their excess energy as phonons. 15
16 Hot Carrier Degradation 3580 West Ina Road, Tucson AZ ridgetopgroup.com 16
17 Hot Carrier Degradation 17
18 Hot Carrier Degradation West Ina Road, Tucson AZ ridgetopgroup.com 18
19 Hot Carrier Degradation 19
20 NBTI and PBTI Negative bias temperature instability (NBTI) is a key reliability issue in MOSFETs. Of immediate concern for pmos operate almost always with negative gate-to-source voltage The very same mechanism affects also nmos when biased in the accumulation regime (PBTI) NBTI manifests as An increase in threshold voltage A decrease in drain current and transconductance The degradation has logarithmic dependence on time Two kinds of trap contribute to NBTI: Interface traps cannot be recovered over a reasonable time of operation - permanent traps similar to the ones resulting from HCI In case of NBTI, the electric field breaks Si-H bonds located at the SiO2 interface. H is released and migrates in the substrate. The remaining dangling bond Si- (Pb center) contribute to the threshold voltage degradation. Pre-existing traps located in the bulk of the dielectric (and supposedly nitrogen related), are filled with holes coming from the PMOS channel. Those traps can be emptied when the stress voltage is removed. This Vth degradation can be recovered over time. (Annealing effect) 20
21 NBTI and PBTI 21
22 NBTI and PBTI (SiO 2 gate) 22
23 NBTI and PBTI (high k gate) 23
24 NBTI and PBTI (SiO 2 vs. high k) 24
25 NBTI and PBTI (relaxation) 25
26 NBTI and PBTI (relaxation) 26
27 NBTI and PBTI (DC vs. AC stress) 27
28 Mitigation: Process Data Semiconductor processing always yield a distribution of parameter values Minimum geometries have larger fluctuations Smaller feature size & lower voltages increase the impact of variation of transistor properties on chip performance and yield Foundry-supplied Process Design Kit (PDK) may not give sufficiently accurate data for critical design parameters 28
29 Mitigation: Addressing Nanoscale Reliability Issues Use Additional Design Margin Increased power consumption Impacts overall circuit performance Collect Accurate Process information Lifetime Reliability Monitoring Real-time operating embedded sensors Actual State of Health for critical paths Early warning of impending failure 29
30 ProChek Semiconductor Reliability Characterization System 30
31 Characteristics of ProChek Targets bulk CMOS, SOI, SiGe reliability concerns NBTI / PBTI, TDDB, HC, EM, SM Test Coupon As little as 1 * 1mm chip area MPW for lower cost devices can be tested in parallel for maximum throughput On chip per transistor heaters to 325 C, greatly reducing test time Synthesizable (except for on chip heaters) to speed deployment Bench top Tester Fully programmable test conditions cover DC and AC stress cases Portable and compact ATE not needed Host Controller Easy to use software GUI Rich suite of built in reliability test templates Data processing capabilities 31
32 Sentinel Silicon Die Level Prognostic Solutions and Applications 32
33 Calibrated Prognostic Distance Stress/Accelerate: T1 = 99% failure in canary T2 = 1% failure in host Prognostic Distance = T2 T1 33
34 Questions? Esko Mikkola, Ph.D. Senior Principal Engineer x141 (office) Andrew Levy Director, Semiconductor & Precision Instruments Division x115 (office) (mobile) Ridgetop Group Inc West Ina Road Tucson, AZ
Ridgetop Group, Inc.
Ridgetop Group, Inc. Ridgetop Group Facilities in Tucson, AZ Arizona-based firm, founded in 2000, with focus on electronics for critical applications Two divisions: Semiconductor & Precision Instruments
More informationDefect-Oriented Degradations in Recent VLSIs: Random Telegraph Noise, Bias Temperature Instability and Total Ionizing Dose
Defect-Oriented Degradations in Recent VLSIs: Random Telegraph Noise, Bias Temperature Instability and Total Ionizing Dose Kazutoshi Kobayashi Kyoto Institute of Technology Kyoto, Japan kazutoshi.kobayashi@kit.ac.jp
More informationIntroducing Pulsing into Reliability Tests for Advanced CMOS Technologies
WHITE PAPER Introducing Pulsing into Reliability Tests for Advanced CMOS Technologies Pete Hulbert, Industry Consultant Yuegang Zhao, Lead Applications Engineer Keithley Instruments, Inc. AC, or pulsed,
More informationDATE 2016 Early Reliability Modeling for Aging and Variability in Silicon System (ERMAVSS Workshop)
March 2016 DATE 2016 Early Reliability Modeling for Aging and Variability in Silicon System (ERMAVSS Workshop) Ron Newhart Distinguished Engineer IBM Corporation March 19, 2016 1 2016 IBM Corporation Background
More informationAtomic-layer deposition of ultrathin gate dielectrics and Si new functional devices
Atomic-layer deposition of ultrathin gate dielectrics and Si new functional devices Anri Nakajima Research Center for Nanodevices and Systems, Hiroshima University 1-4-2 Kagamiyama, Higashi-Hiroshima,
More informationNAME: Last First Signature
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT
More informationMOSFET short channel effects
MOSFET short channel effects overview Five different short channel effects can be distinguished: velocity saturation drain induced barrier lowering (DIBL) impact ionization surface scattering hot electrons
More informationLecture #29. Moore s Law
Lecture #29 ANNOUNCEMENTS HW#15 will be for extra credit Quiz #6 (Thursday 5/8) will include MOSFET C-V No late Projects will be accepted after Thursday 5/8 The last Coffee Hour will be held this Thursday
More informationINTERNATIONAL JOURNAL OF APPLIED ENGINEERING RESEARCH, DINDIGUL Volume 1, No 3, 2010
Low Power CMOS Inverter design at different Technologies Vijay Kumar Sharma 1, Surender Soni 2 1 Department of Electronics & Communication, College of Engineering, Teerthanker Mahaveer University, Moradabad
More informationWafer Level Reliability Test Application
Wafer Level Reliability Test Application Agenda Introduction ProChek & Test Structures ProChek WLR Application ProChek Test Considerations & Test Results ProChek Plus Summary Q&A. 2 Why ProChek Obtaining
More informationSolid State Devices- Part- II. Module- IV
Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the
More informationEducation on CMOS RF Circuit Reliability
Education on CMOS RF Circuit Reliability Jiann S. Yuan 1 Abstract This paper presents a design methodology to study RF circuit performance degradations due to hot carrier and soft breakdown. The experimental
More informationWHITE PAPER CIRCUIT LEVEL AGING SIMULATIONS PREDICT THE LONG-TERM BEHAVIOR OF ICS
WHITE PAPER CIRCUIT LEVEL AGING SIMULATIONS PREDICT THE LONG-TERM BEHAVIOR OF ICS HOW TO MINIMIZE DESIGN MARGINS WITH ACCURATE ADVANCED TRANSISTOR DEGRADATION MODELS Reliability is a major criterion for
More informationLSI ON GLASS SUBSTRATES
LSI ON GLASS SUBSTRATES OUTLINE Introduction: Why System on Glass? MOSFET Technology Low-Temperature Poly-Si TFT Technology System-on-Glass Technology Issues Conclusion System on Glass CPU SRAM DRAM EEPROM
More informationUNIT-1 Fundamentals of Low Power VLSI Design
UNIT-1 Fundamentals of Low Power VLSI Design Need for Low Power Circuit Design: The increasing prominence of portable systems and the need to limit power consumption (and hence, heat dissipation) in very-high
More informationSemiconductor TCAD Tools
Device Design Consideration for Nanoscale MOSFET Using Semiconductor TCAD Tools Teoh Chin Hong and Razali Ismail Department of Microelectronics and Computer Engineering, Universiti Teknologi Malaysia,
More informationSemiconductor Physics and Devices
Metal-Semiconductor and Semiconductor Heterojunctions The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is one of two major types of transistors. The MOSFET is used in digital circuit, because
More informationIntegrated Circuit Intrinsic Reliability
Integrated Circuit Intrinsic Reliability Dennis Eaton Agilent Technologies dennis_eaton@agilent.com IEEE Solid-State Circuits Society February 16, 2005 Dennis Eaton (c) IEEE SSC Society Feb. 16, 2005 1
More informationEffect of Aging on Power Integrity of Digital Integrated Circuits
Effect of Aging on Power Integrity of Digital Integrated Circuits A. Boyer, S. Ben Dhia Alexandre.boyer@laas.fr Sonia.bendhia@laas.fr 1 May 14 th, 2013 Introduction and context Long time operation Harsh
More informationINTRODUCTION: Basic operating principle of a MOSFET:
INTRODUCTION: Along with the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying
More informationSession 10: Solid State Physics MOSFET
Session 10: Solid State Physics MOSFET 1 Outline A B C D E F G H I J 2 MOSCap MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor: Al (metal) SiO2 (oxide) High k ~0.1 ~5 A SiO2 A n+ n+ p-type Si (bulk)
More information2014, IJARCSSE All Rights Reserved Page 1352
Volume 4, Issue 3, March 2014 ISSN: 2277 128X International Journal of Advanced Research in Computer Science and Software Engineering Research Paper Available online at: www.ijarcsse.com Double Gate N-MOSFET
More informationPAPER SOLUTION_DECEMBER_2014_VLSI_DESIGN_ETRX_SEM_VII Prepared by Girish Gidaye
Q1a) The MOS System under External Bias Depending on the polarity and the magnitude of V G, three different operating regions can be observed for the MOS system: 1) Accumulation 2) Depletion 3) Inversion
More informationFin-Shaped Field Effect Transistor (FinFET) Min Ku Kim 03/07/2018
Fin-Shaped Field Effect Transistor (FinFET) Min Ku Kim 03/07/2018 ECE 658 Sp 2018 Semiconductor Materials and Device Characterizations OUTLINE Background FinFET Future Roadmap Keeping up w/ Moore s Law
More informationDesign and Analysis of Double Gate MOSFET Devices using High-k Dielectric
International Journal of Electrical Engineering. ISSN 0974-2158 Volume 7, Number 1 (2014), pp. 53-60 International Research Publication House http://www.irphouse.com Design and Analysis of Double Gate
More informationPramoda N V Department of Electronics and Communication Engineering, MCE Hassan Karnataka India
Advanced Low Power CMOS Design to Reduce Power Consumption in CMOS Circuit for VLSI Design Pramoda N V Department of Electronics and Communication Engineering, MCE Hassan Karnataka India Abstract: Low
More informationData Remanence in Semiconductor Devices
Data Remanence in Semiconductor Devices Peter Gutmann IBM T.J.Watson Research Center Introduction 1996: Securely deleting data from magnetic media is hard 2001: Semiconductors aren t so easy either Magnetic
More informationTunneling Field Effect Transistors for Low Power ULSI
Tunneling Field Effect Transistors for Low Power ULSI Byung-Gook Park Inter-university Semiconductor Research Center and School of Electrical and Computer Engineering Seoul National University Outline
More informationDesign Simulation and Analysis of NMOS Characteristics for Varying Oxide Thickness
MIT International Journal of Electronics and Communication Engineering, Vol. 4, No. 2, August 2014, pp. 81 85 81 Design Simulation and Analysis of NMOS Characteristics for Varying Oxide Thickness Alpana
More informationCHAPTER 2 LITERATURE REVIEW
CHAPTER 2 LITERATURE REVIEW 2.1 Introduction of MOSFET The structure of the MOS field-effect transistor (MOSFET) has two regions of doping opposite that of the substrate, one at each edge of the MOS structure
More informationReliability of deep submicron MOSFETs
Invited paper Reliability of deep submicron MOSFETs Francis Balestra Abstract In this work, a review of the reliability of n- and p-channel Si and SOI MOSFETs as a function of gate length and temperature
More informationDG-FINFET LOGIC DESIGN USING 32NM TECHNOLOGY
International Journal of Knowledge Management & e-learning Volume 3 Number 1 January-June 2011 pp. 1-5 DG-FINFET LOGIC DESIGN USING 32NM TECHNOLOGY K. Nagarjuna Reddy 1, K. V. Ramanaiah 2 & K. Sudheer
More informationA Novel Multiplier Design using Adaptive Hold Logic to Mitigate BTI Effect
GRD Journals Global Research and Development Journal for Engineering International Conference on Innovations in Engineering and Technology (ICIET) - 2016 July 2016 e-issn: 2455-5703 A Novel Multiplier
More informationIntel s Breakthrough in High-K Gate Dielectric Drives Moore s Law Well into the Future
Page 1 Intel s Breakthrough in High-K Gate Dielectric Drives Moore s Law Well into the Future Robert S. Chau Intel Fellow, Technology and Manufacturing Group Director, Transistor Research Intel Corporation
More informationAnalyzing Combined Impacts of Parameter Variations and BTI in Nano-scale Logical Gates
Analyzing Combined Impacts of Parameter Variations and BTI in Nano-scale Logical Gates Seyab Khan Said Hamdioui Abstract Bias Temperature Instability (BTI) and parameter variations are threats to reliability
More informationV A ( ) 2 = A. For Vbe = 0.4V: Ic = 7.34 * 10-8 A. For Vbe = 0.5V: Ic = 3.49 * 10-6 A. For Vbe = 0.6V: Ic = 1.
1. A BJT has the structure and parameters below. a. Base Width = 0.5mu b. Electron lifetime in base is 1x10-7 sec c. Base doping is NA=10 17 /cm 3 d. Emitter Doping is ND=2 x10 19 /cm 3. Collector Doping
More informationChapter 3 Basics Semiconductor Devices and Processing
Chapter 3 Basics Semiconductor Devices and Processing 1 Objectives Identify at least two semiconductor materials from the periodic table of elements List n-type and p-type dopants Describe a diode and
More informationChapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1. Topics
Chapter 3: Basics Semiconductor Devices and Processing 2006/9/27 1 Topics What is semiconductor Basic semiconductor devices Basics of IC processing CMOS technologies 2006/9/27 2 1 What is Semiconductor
More informationA Methodology for Measuring Transistor Ageing Effects Towards Accurate Reliability Simulation
A Methodology for Measuring Transistor Ageing Effects Towards Accurate Reliability Simulation Elie Maricau and Georges Gielen ESAT-MICAS KULeuven Heverlee-Leuven, Belgium 3001 Email: elie.maricau@esat.kuleuven.be
More informationDigital Electronics. By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology
K. N. Toosi University of Technology Chapter 7. Field-Effect Transistors By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology http://wp.kntu.ac.ir/faradji/digitalelectronics.htm
More informationFuture MOSFET Devices using high-k (TiO 2 ) dielectric
Future MOSFET Devices using high-k (TiO 2 ) dielectric Prerna Guru Jambheshwar University, G.J.U.S. & T., Hisar, Haryana, India, prernaa.29@gmail.com Abstract: In this paper, an 80nm NMOS with high-k (TiO
More informationPROCESS-VOLTAGE-TEMPERATURE (PVT) VARIATIONS AND STATIC TIMING ANALYSIS
PROCESS-VOLTAGE-TEMPERATURE (PVT) VARIATIONS AND STATIC TIMING ANALYSIS The major design challenges of ASIC design consist of microscopic issues and macroscopic issues [1]. The microscopic issues are ultra-high
More informationECE 340 Lecture 40 : MOSFET I
ECE 340 Lecture 40 : MOSFET I Class Outline: MOS Capacitance-Voltage Analysis MOSFET - Output Characteristics MOSFET - Transfer Characteristics Things you should know when you leave Key Questions How do
More informationAs Semiconductor Devices Shrink so do their Reliability and Lifetimes
As Semiconductor Devices Shrink so do their Reliability and Lifetimes National Software and Airborne Electronic Hardware Standardization Conference August 20-21 Denver, CO Lloyd Condra, Boeing Gary Horan,
More informationFUNDAMENTALS OF MODERN VLSI DEVICES
19-13- FUNDAMENTALS OF MODERN VLSI DEVICES YUAN TAUR TAK H. MING CAMBRIDGE UNIVERSITY PRESS Physical Constants and Unit Conversions List of Symbols Preface page xi xiii xxi 1 INTRODUCTION I 1.1 Evolution
More informationSRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and
More informationECE 340 Lecture 37 : Metal- Insulator-Semiconductor FET Class Outline:
ECE 340 Lecture 37 : Metal- Insulator-Semiconductor FET Class Outline: Metal-Semiconductor Junctions MOSFET Basic Operation MOS Capacitor Things you should know when you leave Key Questions What is the
More informationEE70 - Intro. Electronics
EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π
More informationTest Structures Basics Part 1
Test Structures Basics Part 1 By Christopher Henderson In this document we will provide an overview of test structures as they pertain to reliability. Test structures can provide critical insight into
More informationOn-Chip Silicon Odometers and their Potential Use in Medical Electronics
On-Chip Silicon Odometers and their Potential Use in Medical Electronics John Keane 1 and Chris H. Kim 1. Intel Corporation, Technology and Manufacturing Group, Hillsboro, OR, USA. University of Minnesota,
More informationJournal of Electron Devices, Vol. 20, 2014, pp
Journal of Electron Devices, Vol. 20, 2014, pp. 1786-1791 JED [ISSN: 1682-3427 ] ANALYSIS OF GIDL AND IMPACT IONIZATION WRITING METHODS IN 100nm SOI Z-DRAM Bhuwan Chandra Joshi, S. Intekhab Amin and R.
More informationEE5320: Analog IC Design
EE5320: Analog IC Design Handout 3: MOSFETs Saurabh Saxena & Qadeer Khan Indian Institute of Technology Madras Copyright 2018 by EE6:Integrated Circuits & Systems roup @ IIT Madras Overview Transistors
More informationFinFET-based Design for Robust Nanoscale SRAM
FinFET-based Design for Robust Nanoscale SRAM Prof. Tsu-Jae King Liu Dept. of Electrical Engineering and Computer Sciences University of California at Berkeley Acknowledgements Prof. Bora Nikoli Zheng
More informationCharacterization of Variable Gate Oxide Thickness MOSFET with Non-Uniform Oxide Thicknesses for Sub-Threshold Leakage Current Reduction
2012 International Conference on Solid-State and Integrated Circuit (ICSIC 2012) IPCSIT vol. 32 (2012) (2012) IACSIT Press, Singapore Characterization of Variable Gate Oxide Thickness MOSFET with Non-Uniform
More information4 principal of JNTU college of Eng., JNTUH, Kukatpally, Hyderabad, A.P, INDIA
Efficient Power Management Technique for Deep-Submicron Circuits P.Sreenivasulu 1, Ch.Aruna 2 Dr. K.Srinivasa Rao 3, Dr. A.Vinaya babu 4 1 Research Scholar, ECE Department, JNTU Kakinada, A.P, INDIA. 2
More informationAtoms and Valence Electrons
Technology Overview Atoms and Valence Electrons Conduc:on and Valence Bands Energy Band Gaps in Materials Band gap N- type and P- type Doping Silicon and Adjacent Atoms PN Junc:on Forward Biased PN Junc:on
More informationWhy Scaling? CPU speed Chip size R, C CPU can increase speed by reducing occupying area.
Why Scaling? Higher density : Integration of more transistors onto a smaller chip : reducing the occupying area and production cost Higher Performance : Higher current drive : smaller metal to metal capacitance
More informationSurface Potential Modelling of Hot Carrier Degradation in CMOS Technology. Kiraneswar Muthuseenu
Surface Potential Modelling of Hot Carrier Degradation in CMOS Technology by Kiraneswar Muthuseenu A Thesis Presented in Partial Fulfilment of the Requirements for the Degree Master of Science Approved
More information6. LDD Design Tradeoffs on Latch-Up and Degradation in SOI MOSFET
110 6. LDD Design Tradeoffs on Latch-Up and Degradation in SOI MOSFET An experimental study has been conducted on the design of fully depleted accumulation mode SOI (SIMOX) MOSFET with regard to hot carrier
More informationTransistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced.
Unit 1 Basic MOS Technology Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell Labratories. In 1961, first IC was introduced. Levels of Integration:- i) SSI:-
More informationDigital Integrated Circuits A Design Perspective. The Devices. Digital Integrated Circuits 2nd Devices
Digital Integrated Circuits A Design Perspective The Devices The Diode The diodes are rarely explicitly used in modern integrated circuits However, a MOS transistor contains at least two reverse biased
More informationLecture 4. MOS transistor theory
Lecture 4 MOS transistor theory 1.7 Introduction: A MOS transistor is a majority-carrier device, in which the current in a conducting channel between the source and the drain is modulated by a voltage
More information444 Index. F Fermi potential, 146 FGMOS transistor, 20 23, 57, 83, 84, 98, 205, 208, 213, 215, 216, 241, 242, 251, 280, 311, 318, 332, 354, 407
Index A Accuracy active resistor structures, 46, 323, 328, 329, 341, 344, 360 computational circuits, 171 differential amplifiers, 30, 31 exponential circuits, 285, 291, 292 multifunctional structures,
More informationPerformance Evaluation of MISISFET- TCAD Simulation
Performance Evaluation of MISISFET- TCAD Simulation Tarun Chaudhary Gargi Khanna Rajeevan Chandel ABSTRACT A novel device n-misisfet with a dielectric stack instead of the single insulator of n-mosfet
More informationDegradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress a modeling approach
Tan and Chen Nano Convergence 2014, 1:11 RESEARCH Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress a modeling approach Cher Ming Tan
More informationStudy Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability
University of Central Florida Electronic Theses and Dissertations Doctoral Dissertation (Open Access) Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability 2005 Yi
More informationLecture 33 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 30, 2007
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 33-1 Lecture 33 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 30, 2007 Contents: 1. MOSFET scaling
More informationTDDB Time Depending Dielectric Breakdown. NBTI Negative Bias Temperature Instability. Human Body Model / Machine Model
For integrated circuits or discrete semiconductors select Amkor-Kr to ASECL Assembly Transfer with Cu wire bonds ID Type of change No Yes AC TC SD Headings ANY A2 A3 A4 A5 A6 B1 B2 B3 C1 C2 C3 C4 C5 C6
More informationIOLTS th IEEE International On-Line Testing Symposium
IOLTS 2018 24th IEEE International On-Line Testing Symposium Exp. comparison and analysis of the sensitivity to laser fault injection of CMOS FD-SOI and CMOS bulk technologies J.M. Dutertre 1, V. Beroulle
More informationINTRODUCTION TO MOS TECHNOLOGY
INTRODUCTION TO MOS TECHNOLOGY 1. The MOS transistor The most basic element in the design of a large scale integrated circuit is the transistor. For the processes we will discuss, the type of transistor
More informationvalue of W max for the device. The at band voltage is -0.9 V. Problem 5: An Al-gate n-channel MOS capacitor has a doping of N a = cm ;3. The oxi
Prof. Jasprit Singh Fall 2001 EECS 320 Homework 10 This homework is due on December 6 Problem 1: An n-type In 0:53 Ga 0:47 As epitaxial layer doped at 10 16 cm ;3 is to be used as a channel in a FET. A
More informationConduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor
Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,
More informationTopic 2. Basic MOS theory & SPICE simulation
Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris, Ch 2 & 5.1-5.3 Rabaey, Ch 3) URL: www.ee.ic.ac.uk/pcheung/
More informationConduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor
Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,
More informationITT Technical Institute. ET215 Devices 1. Unit 8 Chapter 4, Sections
ITT Technical Institute ET215 Devices 1 Unit 8 Chapter 4, Sections 4.4 4.5 Chapter 4 Section 4.4 MOSFET Characteristics A Metal-Oxide semiconductor field-effect transistor is the other major category of
More informationAdvanced PDK and Technologies accessible through ASCENT
Advanced PDK and Technologies accessible through ASCENT MOS-AK Dresden, Sept. 3, 2018 L. Perniola*, O. Rozeau*, O. Faynot*, T. Poiroux*, P. Roseingrave^ olivier.faynot@cea.fr *Cea-Leti, Grenoble France;
More informationResonant Tunneling Device. Kalpesh Raval
Resonant Tunneling Device Kalpesh Raval Outline Diode basics History of Tunnel diode RTD Characteristics & Operation Tunneling Requirements Various Heterostructures Fabrication Technique Challenges Application
More informationECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha
ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor
More informationLecture Integrated circuits era
Lecture 1 1.1 Integrated circuits era Transistor was first invented by William.B.Shockley, Walter Brattain and John Bardeen of Bell laboratories. In 1961, first IC was introduced. Levels of Integration:-
More informationFET(Field Effect Transistor)
Field Effect Transistor: Construction and Characteristic of JFETs. Transfer Characteristic. CS,CD,CG amplifier and analysis of CS amplifier MOSFET (Depletion and Enhancement) Type, Transfer Characteristic,
More informationImpact of Interconnect Length on. Degradation
Impact of Interconnect Length on BTI and HCI Induced Frequency Degradation Xiaofei Wang, Pulkit Jain, Dong Jiao and Chris H. Kim University of Minnesota, Minneapolis, MN xfwang@umn.edu www.umn.edu/~chriskim/
More informationSilicon on Insulator (SOI) Spring 2018 EE 532 Tao Chen
Silicon on Insulator (SOI) Spring 2018 EE 532 Tao Chen What is Silicon on Insulator (SOI)? SOI silicon on insulator, refers to placing a thin layer of silicon on top of an insulator such as SiO2. The devices
More informationPower dissipation in CMOS
DC Current in For V IN < V TN, N O is cut off and I DD = 0. For V TN < V IN < V DD /2, N O is saturated. For V DD /2 < V IN < V DD +V TP, P O is saturated. For V IN > V DD + V TP, P O is cut off and I
More informationa leap ahead in analog
Analog modeling requirements for HV CMOS technology Ehrenfried Seebacher 2011-12-15 a leap ahead in analog Presentation Overview Design perspective on High Performance Analog HV CMOS Analog modeling requirements
More informationECE 440 Lecture 39 : MOSFET-II
ECE 440 Lecture 39 : MOSFETII Class Outline: MOSFET Qualitative Effective Mobility MOSFET Quantitative Things you should know when you leave Key Questions How does a MOSFET work? Why does the channel mobility
More informationPERSPECTIVES FOR DISRUPTIVE 200MM/8-INCH GAN POWER DEVICE AND GAN-IC TECHNOLOGY DR. DENIS MARCON SR. BUSINESS DEVELOPMENT MANAGER
PERSPECTIVES FOR DISRUPTIVE 200MM/8-INCH GAN POWER DEVICE AND GAN-IC TECHNOLOGY DR. DENIS MARCON SR. BUSINESS DEVELOPMENT MANAGER What I will show you today 200mm/8-inch GaN-on-Si e-mode/normally-off technology
More information3084 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 60, NO. 4, AUGUST 2013
3084 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 60, NO. 4, AUGUST 2013 Dummy Gate-Assisted n-mosfet Layout for a Radiation-Tolerant Integrated Circuit Min Su Lee and Hee Chul Lee Abstract A dummy gate-assisted
More informationContribution of Gate Induced Drain Leakage to Overall Leakage and Yield Loss in Digital submicron VLSI Circuits
Contribution of Gate Induced Drain Leakage to Overall Leakage and Yield Loss in Digital submicron VLSI Circuits Oleg Semenov, Andrzej Pradzynski * and Manoj Sachdev Dept. of Electrical and Computer Engineering,
More informationMICROPROCESSOR TECHNOLOGY
MICROPROCESSOR TECHNOLOGY Assis. Prof. Hossam El-Din Moustafa Lecture 3 Ch.1 The Evolution of The Microprocessor 17-Feb-15 1 Chapter Objectives Introduce the microprocessor evolution from transistors to
More informationPerformance advancement of High-K dielectric MOSFET
Performance advancement of High-K dielectric MOSFET Neha Thapa 1 Lalit Maurya 2 Er. Rajesh Mehra 3 M.E. Student M.E. Student Associate Prof. ECE NITTTR, Chandigarh NITTTR, Chandigarh NITTTR, Chandigarh
More informationPerformance Comparison of CMOS and Finfet Based Circuits At 45nm Technology Using SPICE
RESEARCH ARTICLE OPEN ACCESS Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology Using SPICE Mugdha Sathe*, Dr. Nisha Sarwade** *(Department of Electrical Engineering, VJTI, Mumbai-19)
More informationHow material engineering contributes to delivering innovation in the hyper connected world
How material engineering contributes to delivering innovation in the hyper connected world Paul BOUDRE, Soitec CEO Leti Innovation Days - July 2018 Grenoble, France We live in a world of data In perpetual
More informationUNIT 3: FIELD EFFECT TRANSISTORS
FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are
More informationIII-V CMOS: Quo Vadis?
III-V CMOS: Quo Vadis? J. A. del Alamo, X. Cai, W. Lu, A. Vardi, and X. Zhao Microsystems Technology Laboratories Massachusetts Institute of Technology Compound Semiconductor Week 2018 Cambridge, MA, May
More informationATV 2011: Computer Engineering
ATV 2011: Technology Trends in Computer Engineering Professor Per Larsson-Edefors ATV 2011, L1, Per Larsson-Edefors Page 1 Solid-State Devices www.cse.chalmers.se/~perla/ugrad/ SemTech/Lectures_2000.pdf
More informationBasic Fabrication Steps
Basic Fabrication Steps and Layout Somayyeh Koohi Department of Computer Engineering Adapted with modifications from lecture notes prepared by author Outline Fabrication steps Transistor structures Transistor
More informationReliable Electronics? Precise Current Measurements May Tell You Otherwise. Hans Manhaeve. Ridgetop Europe
Reliable Electronics? Precise Current Measurements May Tell You Otherwise Hans Manhaeve Overview Reliable Electronics Precise current measurements? Accurate - Accuracy Resolution Repeatability Understanding
More information+1 (479)
Introduction to VLSI Design http://csce.uark.edu +1 (479) 575-6043 yrpeng@uark.edu Invention of the Transistor Vacuum tubes ruled in first half of 20th century Large, expensive, power-hungry, unreliable
More informationVariation Analysis of CMOS Technologies Using Surface-Potential MOSFET Model
Invited paper Variation Analysis of CMOS Technologies Using Surface-Potential MOSFET Model Hans Jürgen Mattausch, Akihiro Yumisaki, Norio Sadachika, Akihiro Kaya, Koh Johguchi, Tetsushi Koide, and Mitiko
More informationIntel s High-k/Metal Gate Announcement. November 4th, 2003
Intel s High-k/Metal Gate Announcement November 4th, 2003 1 What are we announcing? Intel has made significant progress in future transistor materials Two key parts of this new transistor are: The gate
More information