Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-7A, R DS(ON) = V GS. =-10V = 60mW(max.
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1 P-Chnnel Enhncement Mode MOSFET Fetures -3V/-7A, = V GS =-V = V GS =-4.5V % UIS + R g Tested Relible nd Rugged Led Free nd Green Devices Avilble (RoHS Complint) HBM ESD protection level pss 2KV Pin Description D D D D S S S G Top View of SOP-8 ( 5,6,7,8 ) DDDD Applictions Power Mngement in Notebook Computer, Portble Equipment nd Bttery Powered Systems. Low Switch. (4) G S S S (, 2, 3) Ordering nd Mrking Informtion P-Chnnel MOSFET SM495PS SM495PS K : Assembly Mteril Hndling Code Temperture Rnge 495PS XXXXX Pckge Code Pckge Code K : SOP-8 Operting Junction Temperture Rnge C : -55 to 5 o C Hndling Code TR : Tpe & Reel Assembly Mteril G : Hlogen nd Led Free Device XXXXX - Lot Code Note : SINOPOWER led-free products contin molding compounds/die ttch mterils nd % mtte tin plte termintion finish; which re fully complint with RoHS. SINOPOWER led-free products meet or exceed the ledfree requirements of IPC/JEDEC J-STD-2D for MSL clssifiction t led-free pek reflow temperture. SINOPOWER defines Green to men led-free (RoHS complint) nd hlogen free (Br or Cl does not exceed 9ppm by weight in homogeneous mteril nd totl of Br nd Cl does not exceed 5ppm by weight). SINOPOWER reserves the right to mke chnges to improve relibility or mnufcturbility without notice, nd dvise customers to obtin the ltest version of relevnt informtion to verify before plcing orders.
2 Absolute Mximum Rtings (T A = 25 C Unless Otherwise Noted) Symbol Prmeter Rting Unit V DSS Drin-Source Voltge -3 V GSS Gte-Source Voltge ±2 I D I DM I S I AS b E AS b Continuous Drin Current (V GS =-V) T A =25 C -7 T A =7 C ms Pulsed Drin Current (V GS =-V) -28 Diode Continuous Forwrd Current -2 Avlnche Current, Single pulse L=.5mH -9 Avlnche Energy, Single pulse L=.5mH 2 mj T J Mximum Junction Temperture 5 T STG Storge Temperture Rnge -55 to 5 P D R qja Mximum Power Dissiption Therml Resistnce-Junction to Ambient T A =25 C 2.8 T A =7 C.8 t s 45 Stedy Stte 85 R qjl Therml Resistnce-Junction to Led Stedy Stte 24 Note :Surfce Mounted on in 2 pd re, t sec. Note b:uis tested nd pulse width limited by mximum junction temperture 5 o C (initil temperture =25 o C). V A C W C/W 2
3 Electricl Chrcteristics (T A = 25 C Unless Otherwise Noted) Symbol Prmeter Test Conditions Min. Typ. Mx. Unit Sttic Chrcteristics BV DSS Drin-Source Brekdown Voltge V GS =V, I DS =-25mA V I DSS Zero Gte Voltge Drin Current V DS =-24V, V GS =V T J =85 C V GS(th) Gte Threshold Voltge V DS =V GS, I DS =-25mA V I GSS Gte Lekge Current V GS =±2V, V DS =V - - ± ma c Drin-Source On-stte Resistnce Diode Chrcteristics V SD c t rr d Q rr d V GS =-V, I DS =-7A V GS =-4.5V, I DS =-4A Diode Forwrd Voltge I SD =-2A, V GS =V V Reverse Recovery Time ns I SD =-7A, di SD /dt=a/ms Reverse Recovery Chrge - - nc Dynmic Chrcteristics d R g Gte Resistnce V GS =V, V DS =V,F=MHz W C iss Input Cpcitnce V GS =V, C oss Output Cpcitnce V DS =-5V, C rss Reverse Trnsfer Cpcitnce Frequency=.MHz t d(on) Turn-on Dely Time t r Turn-on Rise Time V DD =-5V, R L =5W, - - I DS =-A, V GEN =-V, t d(off) Turn-off Dely Time R G =6W t f Turn-off Fll Time Gte Chrge Chrcteristics d Q g Totl Gte Chrge Q gs Gte-Source Chrge V DS =-5V, V GS =-V, I DS =-7A - - Q gd Gte-Drin Chrge Note c:pulse test ; pulse width 3ms, duty cycle 2%. Note d:gurnteed by design, not subject to production testing. ma mw pf ns nc 3
4 Typicl Operting Chrcteristics Power Dissiption Drin Current P tot - Power (W) I D - Drin Current (A) T A =25 o C T A =25 o C,V G =-V Junction Temperture ( C) - Junction Temperture ( C) Sfe Opertion Are Therml Trnsient Impednce 5 3 -I D - Drin Current (A) 3ms ms ms ms. s T A =25 o C DC.. -V DS - Drin - Source Voltge (V) Rds(on) Limit Normlized Trnsient Therml Resistnce....2 Single Pulse.5..2 Duty =.5 Mounted on in 2 pd R qja : 45 o C/W E-3 E-4 E-3.. Squre Wve Pulse Durtion (sec) 4
5 Typicl Operting Chrcteristics (Cont.) Output Chrcteristics Drin-Source On Resistnce 3 V GS = -4.5,-5,-6,-7,-8,-9,-V -I D - Drin Current (A) V -3.5V -3V - On - Resistnce (mw) V GS =-4.5V V GS =-V -2.5V V DS - Drin-Source Voltge (V) I D - Drin Current (A) Gte-Source On Resistnce Gte Threshold Voltge 4 I DS =-7A.6 I DS =-25mA On Resistnce (mw) Normlized Threshold Voltge V GS - Gte - Source Voltge (V) - Junction Temperture ( C) 5
6 Typicl Operting Chrcteristics (Cont.) Drin-Source On Resistnce Source-Drin Diode Forwrd Normlized On Resistnce V GS = -V I DS = -7A -I S - Source Current (A) 3 =5 o C =25 o C.6 R =25 o C: 3mW Junction Temperture ( C) V SD - Source - Drin Voltge (V) Cpcitnce Gte Chrge C - Cpcitnce (pf) Crss Coss Frequency=MHz Ciss -V GS - Gte - source Voltge (V) V DS =-5V I DS =-7A V DS - Drin - Source Voltge (V) Q G - Gte Chrge (nc) 6
7 Avlnche Test Circuit nd Wveforms VDS L tav DUT EAS RG VDD VDD tp IAS IL.W tp VDSX(SUS) VDS Switching Time Test Circuit nd Wveforms VDS RG VGS DUT RD VDD VGS % td(on) tr td(off) tf tp 9% VDS 7
8 Clssifiction Profile 8
9 Clssifiction Reflow Profiles Profile Feture Sn-Pb Eutectic Assembly Pb-Free Assembly Prehet & Sok Temperture min (T smin ) Temperture mx (T smx ) Time (T smin to T smx ) (t s ) C 5 C 6-2 seconds 5 C 2 C 6-2 seconds Averge rmp-up rte (T smx to T P ) 3 C/second mx. 3 C/second mx. Liquidous temperture (T L ) Time t liquidous (t L ) Pek pckge body Temperture (T p )* Time (t P )** within 5 C of the specified clssifiction temperture (T c ) 83 C 6-5 seconds 27 C 6-5 seconds See Clssifiction Temp in tble See Clssifiction Temp in tble 2 2** seconds 3** seconds Averge rmp-down rte (T p to T smx ) 6 C/second mx. 6 C/second mx. Time 25 C to pek temperture 6 minutes mx. 8 minutes mx. * Tolernce for pek profile Temperture (T p ) is defined s supplier minimum nd user mximum. ** Tolernce for time t pek profile temperture (t p ) is defined s supplier minimum nd user mximum. Tble. SnPb Eutectic Process Clssifiction Tempertures (Tc) Pckge Thickness <35 Tble 2. Pb-free Process Clssifiction Tempertures (Tc) 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Pckge Thickness < >2 <.6 mm 26 C 26 C 26 C.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Relibility Test Progrm Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, A8 Hrs, 8% of VDS Tjmx HTGB JESD-22, A8 Hrs, % of VGS Tjmx PCT JESD-22, A2 68 Hrs, %RH, 2tm, 2 C TCT JESD-22, A4 5 Cycles, -65 C~5 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing St Rd., Hsinchu Science Prk, Hsinchu, 378, Tiwn TEL: Fx:
Package Code. K : SOP-8 Operating Junction Temperature Range C : -55 to 150 o C Handling Code TR : Tape & Reel. Handling Code Temperature Range
N-Chnnel Enhncement Mode MOSFET Fetures 30V/A, R DS(ON) = 16mW(mx.) @ V GS = V R DS(ON) = 22mW(mx.) @ V GS = 4.5V 0% UIS + R g Tested Relible nd Rugged Led Free nd Green Devices Avilble (RoHS Complint)
More informationSM2001CS K : Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/9.
Dual Enhancement Mode MOSFET (N- and P-Channel) Features N-Channel V/9.5A, P-Channel R DS(ON) =4mW(max.) @ = 4.5V R DS(ON) =8mW(max.) @ =.5V -V/-6A, R DS(ON) =45mW(max.) @ =-4.5V R DS(ON) =65mW(max.) @
More informationHandling Code Temperature Range
N-Channel Enhancement Mode MOSFET Features Pin Description 60V/12A, R DS(ON) = 6.6mW (max.) @ V GS =V R DS(ON) = 8.0mW (max.) @ V GS =4.5V 0% UIS + R g Tested Reliable and Rugged Lead Free and Green Devices
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/15A, R DS(ON) = 10V. = V GS = 4.
N-Channel Enhancement Mode MOSFET Features 100V/15A, R DS(ON) = 100mW(max.) @ V GS = 10V R DS(ON) = 110mW(max.) @ V GS = 4.5V 100% UIS + R g Tested ESD Protection Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-9.3, R DS(ON) = 24mW(max.) @ V GS =-V R DS(ON) = 38mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 150V/35A, R DS(ON) = 10V 100% UIS + R g. = 38mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 15V/35A, R DS(ON) = 38mW(max.) @ V GS = V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G DS Top
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 40V/66A, R DS(ON) =3.2mW V GS. =10V =4mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 4V/66A, R DS(ON) =3.2mW (Max.) @ V GS =V R DS(ON) =4mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationG : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX
P-Channel Enhancement Mode MOSFET Features -2V/-95A, = 3.6mΩ(max.) @ =-1V = 4.6mΩ(max.) @ =-4.5V = 7mΩ(max.) @ =-2.5V = 1mΩ(max.) @ =-1.8V HBM ESD protection level of 2.3KV typical 1% UIS + R g Tested
More informationHandling Code Temperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, R DS(ON) =.5mW (max.) @ V GS =V R DS(ON) =14.5mW (max.) @ V GS =4.5V 0% UIS + R g Tested D G S Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/60A, R DS(ON) =5.7mW V GS. =10V =9mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/6A, R DS(ON) =5.7mW (Max.) @ V GS =V R DS(ON) =9mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationSM4377NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V = 9.6mW (max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5A, R DS(ON) = 7mW (max.) @ V GS =V R DS(ON) = 9.6mW (max.) @ V GS =4.5V Provide Excellent Qgd x Rds-on % UIS + R g Tested Reliable and Rugged
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max.
P-Channel Enhancement Mode MOSFET Features -3V/-68, R DS(ON) = 9mW(max.) @ V GS =-V R DS(ON) = 5mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) HBM ESD
More informationSM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS
More informationSM2607CSC. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/5A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 2V/5A, R DS(ON) =38mW(max.) @ =4.5V R DS(ON) =54mW(max.) @ =2.5V R DS(ON) =85mW(max.) @ =.8V P-Channel -2V/-3.3A, R DS(ON)
More informationS1 / D2 (3)(4) (2)(5)(6)(7)
Dual N-Channel Enhancement Mode MOSFET Features Channel 3V/24A, R DS(ON) = 3.9mW (max.) @ = V R DS(ON) = 6.5mW (max.) @ = 4.5V Channel 2 3V/44A, R DS(ON) =.2mW (max.) @ =V R DS(ON) = 2mW (max.) @ =4.5V
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free
More informationSM4337NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/55A, R DS(ON) =7.1mW V GS
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/55, R DS(ON) =7.1mW (max.) @ V GS =V R DS(ON) =mw (max.) @ V GS =4.5V % E S (UIS) test ESD Protection D D D D S S S G DFN5x6-8 Pin 1 Lead Free
More informationSM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features Pin Configuration -0V/-13A, R DS(ON) =205mΩ (max.) @ V GS =-V R DS(ON) =300mΩ (max.) @ V GS =-4V Reliable and Rugged D S G S D G Lead Free and Green Devices Available
More informationAPM8005K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 80V/4.
Dual N-Channel Enhancement Mode MOSFET Features Pin Description 80V/4.7A, R DS(ON) =45mΩ (Typ.) @ V GS = 10V R DS(ON) =55mΩ (Typ.) @ V GS = 5V Reliable and Rugged Lead Free and Green Devices Available
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.9A, R DS(ON) =43mΩ (Max.) @ V GS =-4.5V R DS(ON) =58mΩ (Max.) @ V GS =-2.5V R DS(ON) =88mΩ (Max.) @ V GS =-1.8V 1% UIS + R g Tested Reliable
More informationHandling Code Temperature Range. TU : Tube. Assembly Material
N-Channel Enhancement Mode MOSFET Features Pin Description 650V/20A, R DS(ON) = 0.8W(max.) @ V GS = V V @Tj, max=750v (typ.) DS Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable
More informationHandling Code Temperature Range Package Code. Assembly Material
N-Channel Enhancement Mode MOSFET Features 75V/7 a, R DS(ON) = 4.3mW (Max.) @ V GS =V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) Pin Description D S G Top View of TO-263-3
More informationSM7320ESQG. Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET. Channel 1 30V/64A, R DS(ON) = 2.5mΩ (max.
Dual N-Channel Enhancement Mode MOSFET Features Pin Description Channel 3V/64A, R DS(ON) = 5.2mΩ (max.) @ = V R DS(ON) = 7.5mΩ (max.) @ = 4.5V Channel 2 3V/85A, G2 S2S2S2 D G DD S/D2 (Pin 9) DFN5x6D-8_EP2
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max.
SM23NS N-Channel Enhancement Mode MOSFET Features Pin Description 2V/6, R DS(ON) =25mW (max.) @ =V R DS(ON) =3mW (max.) @ =4.5V R DS(ON) =4mW (max.) @ =2.5V R DS(ON) =6mW (max.) @ =.8V D G S Reliable and
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/85A, R DS(ON) =10V = 4.6mW V GS. = 3mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/85, R DS(ON) = 3mW (Max.) @ V GS =V R DS(ON) = 4.6mW (Max.) @ V GS =4.5V Reliable and Rugged D G S Lead Free and Green Devices vailable (RoHS
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features -6V/-15, R DS(ON) =93mΩ(max.) @ V GS =-1V R DS(ON) =128mΩ(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) 1% UIS
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/8A, R DS(ON) = 10V. = V GS = 4.5V Reliable and Rugged
N-Channel Enhancement Mode MOSFET Features Pin Description V/8, R DS(ON) = 29mΩ(max.) @ V GS = V R DS(ON) = 33mΩ(max.) @ V GS = 4.5V Reliable and Rugged G D S Lead Free and Green Devices vailable (RoHS
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/4.7, R DS(ON) =4mW(max.) @ V GS =V R DS(ON) =6mW(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant)
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/5.1A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.1A, R DS(ON) =25mΩ(max.) @ V GS =10V R DS(ON) =35mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
More informationFeatures. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, =50mΩ(typ.) @ =4.5V =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, =90mΩ(typ.) @ =-4.5V =30mΩ(typ.) @ =-2.5V Reliable
More informationPackage Code S : SOP-8. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features 100 V/8 A R DS(ON) = 20 m Ω (typ.) @ V GS =10V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description D D D
More informationadvise customers to obtain the latest version of relevant information to verify before placing orders.
N-Channel Enhancement Mode MOSFET Features Pin Description 68V/ 70A R DS(ON) = 6.5mΩ (typ.) @ V GS =V 0% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
More informationG D S. Package Code U : TO-251-3L HY1908. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A, 7.8 R DS(ON) = mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S G
More informationPackage Code. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
More informationP HY1906. B HY1906 ÿ YYXXXJWW G HY1906P/B. Features. N-Channel Enhancement Mode MOSFET V / 120A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 60V / 120A, R DS(ON) = 6.0 mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 200A R DS(ON) = 2.9 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 170A R DS(ON) = 3.8 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationP HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application
N-Channel Enhancement Mode MOSFET Features Pin Description 40V/ 208A R DS(ON) = 2.5 mω (typ.) @ V GS =0V 00% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G
More informationP-Channel Enhancement Mode MOSFET
Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
More informationFeatures. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/9A, R DS(ON) = V GS = 4.5V = 4V = 3.
ual N-Channel Enhancement Mode MOSFET Features 2V/9, = 9.5mW(max.) @ = 4.5V = mw(max.) @ = 4V =.5mW(max.) @ = 3.7V = 11.5mW(max.) @ = 3.1V = 13mW(max.) @ = 2.5V Reliable and Rugged ES Protected Lead Free
More informationFeatures. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =7.5mΩ (typ.) @ =V R DS(ON) =12mΩ (typ.) @ =4.5V Super High Dense Cell Design Reliable and Rugged valanche Rated D G S Top View
More informationN-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/5, R DS(ON) =8.5mΩ (typ.) @ V GS =1V R DS(ON) =15mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design valanche Rated Reliable and Rugged Lead
More informationFeatures. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5, R DS(ON) =38mΩ(Typ.) @ = V R DS(ON) =55mΩ(Typ.) @ = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationPackage Code P : TO-220FB-3L. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ (typ.) @ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology
More informationFeatures. N-Channel Enhancement Mode MOSFET 25V/60A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/6, R DS(ON) =4.5mΩ (typ.) @ V GS =V R DS(ON) =7.5mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4, =48mΩ(typ.) @ V GS =-4.5V =85mΩ(typ.) @ V GS =-2.5V =135mΩ(typ.) @ V GS =-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free
More informationFeatures. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3 R DS(ON) = 56mΩ (typ.) @ V GS = -4.5V R DS(ON) = 85mΩ (typ.) @ V GS = -2.5V R DS(ON) = 135mΩ (typ.) @ V GS = -1.8V Super High Dense Cell
More informationAssembly Material. Handling Code Temperature Range Package Code
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, R DS(ON) =50mΩ(typ.) @ =4.5V R DS(ON) =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, R DS(ON) =90mΩ(typ.) @ =-4.5V R
More informationFeatures. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel)
Dual Enhancement Mode MOSFET (N- and ) Features Pin Description N-Channel 4V/6.5A, R DS(ON) = mω (typ.) @ = V R DS(ON) = 8mΩ (typ.) @ = 4.5V -4V/-5A, R DS(ON) = 35mΩ (typ.) @ =-V R DS(ON) = 48mΩ (typ.)
More informationTemperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =4.8mΩ (typ.) @ V GS =V R DS(ON) =7mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
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Dual Enhancement Mode MOSFET (N- and ) Features Pin Description V/8A, R DS(ON) =mω(typ.) @ =.5V R DS(ON) =3mΩ(typ.) @ =.5V -V/-.3A, R DS(ON) =8mΩ(typ.) @ =-.5V R DS(ON) =5mΩ(typ.) @ =-.5V Super High Dense
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SM268NSC N-Channel Enhancement Mode MOSFET Features Pin escription 3V/7.4, R S(ON) = 7mΩ(max.) @ V GS =V R S(ON) = 2.5mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green evices vailable (RoHS
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N-Channel Enhancement Mode MOSFET Features Pin Description V/5, R DS(ON) = 35mΩ (Typ.) @ V GS = V R DS(ON) = 45mΩ (Typ.) @ V GS = 4.5V R DS(ON) = mω (Typ.) @ V GS =.5V Super High Dense Cell Design Reliable
More informationSymbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS
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ual N-Channel Enhancement Mode MOSFET Features 60V/4, R S(ON) = 60mΩ(typ.) @ V GS = 0V R S(ON) = 72mΩ(typ.) @ V GS = 4.5V Super High ense Cell esign Reliable and Rugged Lead Free and Green evices vailable
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SPECIFICATION Device Nme Type Nme DWG. No. Dte : IGBT : FGW5N6HD : : Mr.321 This specifiction's contents my chnge without previous notice. REISIONS DRAWN CHECKED CHECKED D A T E Mr./3/ 1 Mr./3/ 1 N A M
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