Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON)

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1 SM268NSC N-Channel Enhancement Mode MOSFET Features Pin escription 3V/7.4, R S(ON) = V GS =V R S(ON) = V GS =4.5V Reliable and Rugged Lead Free and Green evices vailable (RoHS Compliant) S G Top View of SOT-23-6 (,2,5,6) pplications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Load Switch. (3)G (4)S N-Channel MOSFET Ordering and Marking Information SM268NS SM268NS C : C8XX ssembly Material Handling Code Temperature Range Package Code Package Code C : SOT-23-6 Operating Junction Temperature Range C : -55 to 5 o C Handling Code TR : Tape & Reel (3ea/reel) ssembly Material G : Halogen and Lead Free evice XX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEEC J-ST-2 for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.

2 bsolute Maximum Ratings (T = 25 C unless otherwise noted) Symbol Parameter Rating Unit V SS rain-source Voltage 3 V GSS Gate-Source Voltage ±2 V T =25 C 7.4 I * Continuous rain Current (V GS =V) T =7 C 5.8 I M * 3µs Pulsed rain Current (V GS =V) 2 I S * iode Continuous Forward Current T J Maximum Junction Temperature 5 T STG Storage Temperature Range -55 to 5 C P * Maximum Power issipation T =25 C.4 T =7 C.88 W R θj * Thermal Resistance-Junction to mbient t s 6 Steady State 9 C/W Note:*Surface Mounted on in 2 pad area, t sec. Electrical Characteristics (T = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV SS rain-source Breakdown Voltage V GS =V, I S =25µ V I SS V S =24V, V GS =V - - Zero Gate Voltage rain Current µ T J =85 C V GS(th) Gate Threshold Voltage V S =V GS, I S =25µ V I GSS Gate Leakage Current V GS =±2V, V S =V - - ± n R S(ON) a V GS =V, I S =8-4 7 rain-source On-state Resistance mω V GS =4.5V, I S = iode Characteristics V S a iode Forward Voltage I S =, V GS =V V trr b Reverse Recovery Time ns I Qrr b S =8, dl S /dt=/µs Reverse Recovery Charge nc 2

3 Electrical Characteristics (Cont.) (T = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit ynamic Characteristics b R G Gate Resistance V GS =V,V S =V,F=MHz Ω C iss Input Capacitance V GS =V, C oss Output Capacitance V S =5V, Reverse Transfer Capacitance Frequency=.MHz C rss t d(on) Turn-on elay Time t r Turn-on Rise Time V =5V, R L =5Ω, I S =, V GEN =V, t d(off) Turn-off elay Time R G =6Ω Turn-off Fall Time t f Gate Charge Characteristics b Q g Total Gate Charge V S =5V, V GS =4.5V, I S =8-6 8 Q g Total Gate Charge Q gth Threshold Gate Charge V S =5V, V GS =V, Q gs Gate-Source Charge I S = Q gd Gate-rain Charge Note a:pulse test ; pulse width 3 µs, duty cycle 2%. Note b:guaranteed by design, not subject to production testing pf ns nc 3

4 Typical Operating Characteristics Power issipation rain Current P tot - Power (W) I - rain Current () T =25 o C T =25 o C,V G =V Junction Temperature ( C) - Junction Temperature ( C) Safe Operation rea Thermal Transient Impedance 5 2 I - rain Current () 3µs ms ms ms. s C T =25 o C... V S - rain - Source Voltage (V) Rds(on) Limit Normalized Transient Thermal Resistance uty =.5 Single Pulse Mounted on in 2 pad R θj : 6 o C/W. E-4 E-3.. Square Wave Pulse uration (sec) 4

5 Typical Operating Characteristics (Cont.) Output Characteristics rain-source On Resistance 25 V GS =3.5,4,5,6,7,8,9,V 24 I - rain Current () V R S(ON) - On - Resistance (mω) V GS =4.5V VGS=V 2.5V V S - rain-source Voltage (V) I - rain Current () Gate-Source On Resistance Gate Threshold Voltage 6 I S =8.4 I S =25µ R S(ON) - On Resistance (mω) Normalized Threshold Voltage V GS - Gate - Source Voltage (V) - Junction Temperature ( C) 5

6 Typical Operating Characteristics (Cont.) rain-source On Resistance Source-rain iode Forward.8.6 V GS = V I S = 8 2 Normalized On Resistance I S - Source Current () =5 o C =25 o C.6 R =25 o C: 4mΩ Junction Temperature ( C) V S - Source - rain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) Crss Coss Frequency=MHz Ciss V GS - Gate - source Voltage (V) V S = 5V I S = V S - rain - Source Voltage (V) Q G - Gate Charge (nc) 6

7 valanche Test Circuit and Waveforms VS L tp VSX(SUS) UT VS RG V IS tp IL.W V ES tv Switching Time Test Circuit and Waveforms VS UT R VS 9% RG VGS V tp % VGS td(on) tr td(off) tf 7

8 Package Information SOT-23-6 e SEE VIEW 2.25 E E e b c L GUGE PLNE SETING PLNE VIEW S Y M B O L 2 b c E E e e L MIN MILLIMETERS.95 BSC.9 BSC MX SOT MIN INCHES.37 BSC.75 BSC MX Note :. Follow JEEC TO-78 B. 2. imension and E do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed mil per side. RECOMMENE LN PTTERN UNIT: mm 8

9 Carrier Tape & Reel imensions O P P2 P H E O B T B W F K B SECTION - SECTION B-B d T pplication H T C d W E F SOT ±2. 5 MIN MIN. 2.2 MIN. 8.±.3.75±. 3.5±.5 P P P2 T B K 4.±. 4.±. 2.± MIN ±.2 3.±.2.5±.2 (mm) 9

10 Taping irection Information SOT-23-6 USER IRECTION OF FEE XX XX XX XX XX XX XX Classification Profile

11 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) C 5 C 6-2 seconds 5 C 2 C 6-2 seconds verage ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package (T p )* body Temperature Time (t P )** within 5 C of the specified classification temperature (T c ) 83 C 6-5 seconds 27 C 6-5 seconds See Classification Temp in table See Classification Temp in table 2 2** seconds 3** seconds verage ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm Volume mm 3 >2 <.6 mm 26 C 26 C 26 C.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method escription SOLERBILITY JES-22, B2 5 Sec, 245 C HTRB JES-22, 8 Hrs, 8% of VS Tjmax HTGB JES-22, 8 Hrs, % of VGS Tjmax PCT JES-22, 2 68 Hrs, %RH, 2atm, 2 C TCT JES-22, 4 5 Cycles, -65 C~5 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, using St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: Fax:

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