SM2607CSC. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/5A, R DS(ON)
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1 Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 2V/5A, R DS(ON) =4.5V R DS(ON) =2.5V R DS(ON) =.8V P-Channel -2V/-3.3A, R DS(ON) =-4.5V R DS(ON) =-2.5V R DS(ON) =-.8V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Applications () G D2 S D Top View of SOT-23-6 (6)D (3) G2 G2 S2 G (4)D2 Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Load Switch (5)S N-Channel (2)S2 P-Channel Ordering and Marking Information SM267CS Assembly Material Handling Code Temperature Range Package Code Package Code C : SOT-23-6 Operating Junction Temperature Range C : -55 to 5 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device SM267CS C : K7XX XX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
2 Absolute Maximum Ratings (T A = 25 C unless otherwise noted) Symbol Parameter N Channel P Channel Unit Common Ratings V DSS Drain-Source Voltage 2-2 V S Gate-Source Voltage ±2 ±2 V I D T A =25 C Continuous Drain Current T A =7 C I DM Pulsed Drain Current =V 2-3 I S Diode Continuous Forward Current T J Maximum Junction Temperature 5 T STG Storage Temperature Range -55 to 5 P D R qja * Maximum Power Dissipation T A =25 C.4 T A =7 C.9 Thermal Resistance-Junction to Ambient t s 9 Steady State 25 Note: * Surface Mounted on in 2 pad area. A C W C/W 2
3 N Channel Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics N Channel Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage =V, =25mA V S Zero Gate Voltage Drain Current V DS =6V, =V - - T J =85 C (th) Gate Threshold Voltage V DS =, =25mA.5.7 V I GSS Gate Leakage Current =±2V, V DS =V - - ± ma R DS(ON) a Drain-Source On-State Resistance Diode Characteristics V SD a =4.5V, =5A =2.5V, =4A =.8V, =A Diode Forward Voltage I SD =A, =V V t rr Reverse Recovery Time ns I SD =5A, dl SD /dt=a/ms Q rr Reverse Recovery Charge nc Dynamic Characteristics b R g Gate Resistance =V,V DS =V,F=MHz W C iss Input Capacitance =V, C oss Output Capacitance V DS =V, C rss Reverse Transfer Capacitance Frequency=.MHz t d(on) Turn-on Delay Time T r Turn-on Rise Time V DD =V, R L =W, =A, V GEN =V, t d(off) Turn-off Delay Time R G =6W T f Turn-off Fall Time Gate Charge Characteristics b Q g Total Gate Charge V DS =V, =5A =4.5V, =V Q gs Gate-Source Charge Q gd Gate-Drain Charge V DS =V, =V, =5A Q gth Threshold Gate Charge -. - Note a:pulse test; pulse width 3ms, duty cycle 2%. Note b:guaranteed by design, not subject to production testing. Unit ma mw pf ns nc 3
4 P Channel Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics P Channel Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage =V, =-25mA V S Zero Gate Voltage Drain Current V DS =-6V, =V T J =85 C (th) Gate Threshold Voltage V DS =, =-25mA V I GSS Gate Leakage Current =±V, V DS =V - - ± ma R DS(ON) a Drain-Source On-State Resistance Diode Characteristics V SD a =-4.5V, =-3.3A =-2.5V, =-2.A =-.8V, =-A Diode Forward Voltage I SD =-A, =V V t rr Reverse Recovery Time ns I SD =-3.3A, dl SD /dt=a/ms Q rr Reverse Recovery Charge nc Dynamic Characteristics b R g Gate Resistance =V,V DS =V,F=MHz - - W C iss Input Capacitance =V, C oss Output Capacitance V DS =-V, C rss Reverse Transfer Capacitance Frequency=.MHz t d(on) Turn-on Delay Time T r Turn-on Rise Time V DD =-V, R L =W, =-A, V GEN =-V, t d(off) Turn-off Delay Time R G =6W T f Turn-off Fall Time Gate Charge Characteristics b Q g Total Gate Charge V DS =-V, =-3.3A =-4.5V, =-V Q gs Gate-Source Charge Q gd Gate-Drain Charge V DS =-V, =-V, =-3.3A Q gth Threshold Gate Charge Note a:pulse test; pulse width 3ms, duty cycle 2%. Note b:guaranteed by design, not subject to production testing. Unit ma mw pf ns nc 4
5 N Channel Typical Operating Characteristics Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) T A =25 o C T A =25 o C,V G =4.5V Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) 5. Rds(on) Limit 3ms ms ms ms DC T A =25 o C... - Drain - Source Voltage (V) Normalized Transient Thermal Resistance Duty =.5 Single Pulse Mounted on in 2 pad R qja : 9 o C/W. E-4 E-3.. Square Wave Pulse Duration (sec) 5
6 N Channel Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 2 =3,4,5,6,7,8,9,V 2 ID - Drain Current (A) V 2V.5V RDS(ON) - On - Resistance (mw) =.8V =2.5V =4.5V Drain-Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 2 =5A.6 =25mA RDS(ON) - On - Resistance (mw) Normalized Threshold Voltage VGS - Gate - Source Voltage (V)
7 N Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward.8.6 = 4.5V = 5A 2 Normalized On Resistance IS - Source Current (A) T j =5 o C T j =25 o C.6 R j =25 o C: 3mW VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) Crss Coss Frequency=MHz Ciss VGS - Gate - source Voltage (V) V DS =V =5A Drain - Source Voltage (V) QG - Gate Charge (nc) 7
8 P Channel Typical Operating Characteristics Power Dissipation Drain Current Ptot - Power (W) ID - Drain Current (A) T A =25 o C T A =25 o C,V G =-4.5V Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A) 5 Rds(on) Limit 3ms ms ms ms. DC T A =25 o C Drain - Source Voltage (V) Normalized Transient Thermal Resistance Duty =.5 Single Pulse Mounted on in 2 pad R qja : 9 o C/W. E-4 E-3.. Square Wave Pulse Duration (sec) 8
9 P Channel Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) =-3,-4,-5,-6,-7,-8,-9,-V -2.5V -2V -.5V RDS(ON) - On - Resistance (mw) =-.8V =-2.5V =-4.5V Drain - Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 3 =-3.3A.6 =-25mA RDS(ON) - On - Resistance (mw) Normalized Threshold Vlotage VGS - Gate - Source Voltage (V) 9
10 P Channel Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward.8.6 = -4.5V = -3.3A Normalized On Resistance IS - Source Current (A) T j =5 o C T j =25 o C.6 R j =25 o C: 65mW VSD - Source - Drain Voltage (V) Capacitance Gate Charge Frequency=MHz 9 V DS =-V =-3.3A C - Capacitance (pf) Crss Coss Ciss -VGS - Gate-source Voltage (V) Drain - Source Voltage (V) QG - Gate Charge (nc)
11 Avalanche Test Circuit and Waveforms N Channel DUT L tp X(SUS) RG VDD IAS tp IL.W VDD EAS tav P Channel L tav DUT EAS RG VDD VDD tp IAS IL.W tp X(SUS) Switching Time Test Circuit and Waveforms N Channel DUT RD 9% RG VGS VDD tp % VGS td(on) tr td(off) tf P Channel RG VGS DUT RD VDD VGS % td(on) tr td(off) tf tp 9%
12 Disclaimer Sinopower Semiconductor, Inc. (hereinafter Sinopower ) has been making great efforts to development high quality and better performance products to satisfy all customers needs. However, a product may fail to meet customer s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 2
13 Classification Profile 3
14 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) C 5 C 6-2 seconds 5 C 2 C 6-2 seconds Average ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) 83 C 6-5 seconds 27 C 6-5 seconds See Classification Temp in table See Classification Temp in table 2 2** seconds 3** seconds Average ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Thickness Volume mm 3 <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm Volume mm 3 >2 <.6 mm 26 C 26 C 26 C.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, A8 Hrs, 8% of Tjmax HTGB JESD-22, A8 Hrs, % of VGS Tjmax PCT JESD-22, A2 68 Hrs, %RH, 2atm, 2 C TCT JESD-22, A4 5 Cycles, -65 C~5 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: Fax:
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More informationG : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX
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Dual N-Channel Enhancement Mode MOSFET Features Pin Description 80V/4.7A, R DS(ON) =45mΩ (Typ.) @ V GS = 10V R DS(ON) =55mΩ (Typ.) @ V GS = 5V Reliable and Rugged Lead Free and Green Devices Available
More informationadvise customers to obtain the latest version of relevant information to verify before placing orders.
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More informationPackage Code S : SOP-8. Date Code YYXXX WW
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N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A, 7.8 R DS(ON) = mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S G
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More informationPackage Code. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
More informationP HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application
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More informationAssembly Material. Handling Code Temperature Range Package Code
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, R DS(ON) =50mΩ(typ.) @ =4.5V R DS(ON) =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, R DS(ON) =90mΩ(typ.) @ =-4.5V R
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 200A R DS(ON) = 2.9 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 170A R DS(ON) = 3.8 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationPackage Code P : TO-220FB-3L. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ (typ.) @ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology
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SM268NSC N-Channel Enhancement Mode MOSFET Features Pin escription 3V/7.4, R S(ON) = 7mΩ(max.) @ V GS =V R S(ON) = 2.5mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green evices vailable (RoHS
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Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
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ual N-Channel Enhancement Mode MOSFET Features 2V/9, = 9.5mW(max.) @ = 4.5V = mw(max.) @ = 4V =.5mW(max.) @ = 3.7V = 11.5mW(max.) @ = 3.1V = 13mW(max.) @ = 2.5V Reliable and Rugged ES Protected Lead Free
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Dual Enhancement Mode MOSFET (N- and ) Features Pin Description V/8A, R DS(ON) =mω(typ.) @ =.5V R DS(ON) =3mΩ(typ.) @ =.5V -V/-.3A, R DS(ON) =8mΩ(typ.) @ =-.5V R DS(ON) =5mΩ(typ.) @ =-.5V Super High Dense
More informationFeatures. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel)
Dual Enhancement Mode MOSFET (N- and ) Features Pin Description N-Channel 4V/6.5A, R DS(ON) = mω (typ.) @ = V R DS(ON) = 8mΩ (typ.) @ = 4.5V -4V/-5A, R DS(ON) = 35mΩ (typ.) @ =-V R DS(ON) = 48mΩ (typ.)
More informationFeatures. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3 R DS(ON) = 56mΩ (typ.) @ V GS = -4.5V R DS(ON) = 85mΩ (typ.) @ V GS = -2.5V R DS(ON) = 135mΩ (typ.) @ V GS = -1.8V Super High Dense Cell
More informationFeatures. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5, R DS(ON) =38mΩ(Typ.) @ = V R DS(ON) =55mΩ(Typ.) @ = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationFeatures. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =7.5mΩ (typ.) @ =V R DS(ON) =12mΩ (typ.) @ =4.5V Super High Dense Cell Design Reliable and Rugged valanche Rated D G S Top View
More informationN-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/5, R DS(ON) =8.5mΩ (typ.) @ V GS =1V R DS(ON) =15mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design valanche Rated Reliable and Rugged Lead
More informationSymbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T
More informationFeatures. N-Channel Enhancement Mode MOSFET 25V/60A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/6, R DS(ON) =4.5mΩ (typ.) @ V GS =V R DS(ON) =7.5mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationTemperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =4.8mΩ (typ.) @ V GS =V R DS(ON) =7mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationFeatures. N-Channel Enhancement Mode MOSFET 40V/57A, R DS(ON) =10V
PM41NU N-Channel Enhancement Mode MOSFET Features Pin Description 4V/57, R DS(ON) =8.2mΩ (typ.) @ V GS =1V R DS(ON) =13mΩ (typ.) @ V GS =5V Super High Dense Cell Design Reliable and Rugged Lead Free and
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4, =48mΩ(typ.) @ V GS =-4.5V =85mΩ(typ.) @ V GS =-2.5V =135mΩ(typ.) @ V GS =-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free
More informationFeatures. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description V/5, R DS(ON) = 35mΩ (Typ.) @ V GS = V R DS(ON) = 45mΩ (Typ.) @ V GS = 4.5V R DS(ON) = mω (Typ.) @ V GS =.5V Super High Dense Cell Design Reliable
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOFET Features Pin Description 3V/7, R D(ON) =4.5mΩ (typ.) @ V G = V R D(ON) =6mΩ (typ.) @ V G = 4.5V uper High Dense Cell Design valanche Rated Reliable and Rugged Lead Free
More informationN-Channel Enhancement Mode MOSFET
Features 20V/3A, R DS(ON) =50mΩ(typ.) @ V GS =4.5V Pin Description R DS(ON) =90mΩ(typ.) @ V GS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT23-3L
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ual N-Channel Enhancement Mode MOSFET Features 60V/4, R S(ON) = 60mΩ(typ.) @ V GS = 0V R S(ON) = 72mΩ(typ.) @ V GS = 4.5V Super High ense Cell esign Reliable and Rugged Lead Free and Green evices vailable
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -40V/-44A, R DS(ON) = 25mΩ V GS =-4.5V 100% UIS + R g =-10V
P-Channel Enhanement Mode MOSFET Features Pin Desription -4V/-44A, R DS(ON) = 17mΩ (max.) @ V GS =-V R DS(ON) = 25mΩ (max.) @ V GS =-4.5V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devies
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More informationP-Channel Enhancement Mode MOSFET
Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of
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More informationPackage Code. Handling Code Temperature Range. TR:Tape & Reel. G:Halogen and Lead Free Device
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