Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET
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- Terence Morris
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1 P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4, V GS =-4.5V V GS =-2.5V V GS =-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) D D S D D G Top View of SOT-23-6 (1,2,5,6) D D D D pplications (3) G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems Ordering and Marking Information S (4) P-Channel MOSFET PM263 ssembly Material Handling Code Temperature Range Package Code Package Code C : SOT-23-6 Operating Junction Temperature Range C : -55 to 15 o C Handling Code TR : Tape & Reel ssembly Material G : Halogen and Lead Free Device PM263 C : M3X X - Date Code Note: NPEC lead-free products contain molding compounds/die attach materials and 1% matte tin plate termination finish; which are fully compliant with RoHS. NPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-2C for MSL classification at lead-free peak reflow temperature. NPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). NPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
2 bsolute Maximum Ratings (T = 25 C unless otherwise noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage -2 V GSS Gate-Source Voltage ±12 V I D * Continuous Drain Current -4 V GS =-4.5V I DM * 3µs Pulsed Drain Current -16 I S * Diode Continuous Forward Current -1.5 T J Maximum Junction Temperature 15 T STG Storage Temperature Range -55 to 15 C P D * Maximum Power Dissipation T =25 C 1.4 T =1 C.5 W R θj * Thermal Resistance-Junction to mbient 9 C/W Note : *Surface Mounted on 1in 2 pad area, t 5sec. Electrical Characteristics (T = 25 C unless otherwise noted) Symbol Parameter Test Conditions Unit Min. Typ. Max. STTIC CHRCTERISTICS BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =-25µ V I DSS V DS =-16V, V GS =V Zero Gate Voltage Drain Current µ T J =85 C V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-25µ V I GSS Gate Leakage Current V GS =±1V, V DS =V - - ±1 µ V GS =-4.5V, I DS = a a V SD Drain-Source On-State Resistance V GS =-2.5V, I DS = mω V GS =-1.8V, I DS = Diode Forward Voltage I SD =-1.5, V GS =V V GTE CHRGE CHRCTERISTICS b Q g Total Gate Charge Q gs Gate-Source Charge V DS =-1V, V GS =-4.5V, I DS = Gate-Drain Charge Q gd nc 2
3 Electrical Characteristics (Cont.) (T = 25 C unless otherwise noted) Symbol Parameter Test Conditions DYNMIC CHRCTERISTICS b Min. Typ. Max. R G Gate Resistance V GS =V,V DS =V,F=1MHz Ω C iss Input Capacitance V GS =V, C oss Output Capacitance V DS =-1V, Reverse Transfer Capacitance Frequency=1.MHz C rss t d(on) Turn-on Delay Time T r Turn-on Rise Time V DD =-1V, R L =1Ω, I DS =-1, V GEN =-4.5V, t d(off) Turn-off Delay Time R G =6Ω Turn-off Fall Time T f t rr Reverse Recovery Time ns I DS =-4, dl SD /dt=1/µs Reverse Recovery Charge nc Q rr Note a : Pulse test ; pulse width 3µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. Unit pf ns 3
4 Typical Operating Characteristics Power Dissipation Drain Current P tot - Power (W) I D - Drain Current () T =25 o C T =25 o C,V G =-4.5V T J - Junction Temperature ( C) T J - Junction Temperature ( C) -I D - Drain Current () Safe Operation rea 5 1 3µs 1 1ms 1ms 1ms.1 1s DC T.1 =25 o C V DS - Drain - Source Voltage (V) Rds(on) Limit Normalized Transient Thermal Resistance Thermal Transient Impedance Single Pulse.2 Duty =.5 Mounted on 1in 2 pad R θj : 9 o C/W 1E-3 1E-4 1E Square Wave Pulse Duration (sec) 4
5 Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance V GS = ,-4,-5,-6,-7,-8,-9,-1V 18 V GS =-1.8V -I D - Drain Current () V -2V - On - Resistance (mω) V GS =-2.5V V GS =-4.5V 2-1.5V V DS - Drain - Source Voltage (V) I D - Drain Current () Drain-Source On Resistance Gate Threshold Voltage 1 9 I D = I DS = -25µ - On - Resistance (mω) Normalized Threshold Voltage V GS - Gate - Source Voltage (V) T J - Junction Temperature ( C) 5
6 Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward V GS = -1V I DS = Normalized On Resistance I S - Source Current () 1 T j =15 o C T j =25 o C.6 R j =25 o C: 48mΩ T J - Junction Temperature ( C) -V SD - Source - Drain Voltage (V) Capacitance Gate Charge 9 8 Frequency=1MHz 1 9 V DS = -1V I D = -4 C - Capacitance (pf) Crss Coss Ciss -V GS - Gate - source Voltage (V) V DS - Drain - Source Voltage (V) Q G - Gate Charge (nc) 6
7 Package Information SOT-23-6 D e SEE VIEW 2.25 E1 E e1 b c 1 L GUGE PLNE SETING PLNE VIEW S Y M B O L 1 2 b c D E E1 e e1 L MIN MILLIMETERS.95 BSC 1.9 BSC MX SOT-23-6 MIN INCHES.37 BSC.75 BSC MX Note : 1. Follow JEDEC TO-178 B. 2. Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 1 mil per side. 7
8 Carrier Tape & Reel Dimensions OD P P2 P1 H E1 OD1 B T B W F K B SECTION - SECTION B-B d T1 pplication H T1 C d D W E1 F SOT MIN MIN. 2.2 MIN P P1 P2 D D1 T B K Devices Per Unit MIN (mm) Package Type Unit Quantity SOT-23-6 Tape & Reel 3 8
9 Taping Direction Information SOT-23-6 USER DIRECTION OF FEED X X X X X X X Reflow Condition (IR/Convection or VPR Reflow) T P Ramp-up tp Critical Zone T L to T P Temperature T L Tsmax Tsmin t L Ramp-down ts Preheat 25 t 25 C to Peak Time Reliability Test Program Test item Method Description SOLDERBILITY MIL-STD-883D C, 5 sec HOLT MIL-STD-883D Hrs C PCT JESD-22-B, Hrs, 1%RH, 121 C TST MIL-STD-883D C~15 C, 2 Cycles 9
10 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly verage ramp-up rate (T L to T P) 3 C/second max. 3 C/second max. Preheat 1 C 15 C - Temperature Min (Tsmin) 15 C 2 C - Temperature Max (Tsmax) 6-12 seconds 6-18 seconds - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (t L) 183 C 6-15 seconds 217 C 6-15 seconds Peak/Classification Temperature (Tp) See table 1 See table 2 Time within 5 C of actual Peak Temperature (tp) 1-3 seconds 2-4 seconds Ramp-down Rate 6 C/second max. 6 C/second max. Time 25 C to Peak Temperature 6 minutes max. 8 minutes max. Note: ll temperatures refer to topside of the package. Measured on the body surface. Table 1. SnPb Eutectic Process Package Peak Reflow Temperatures Package Thickness Volume mm 3 Table 2. Pb-free Process Package Classification Reflow Temperatures Package Thickness Volume mm 3 <35 <35 Volume mm Volume mm 3 Volume mm 3 >2 <1.6 mm 26 + C* 26 + C* 26 + C* 1.6 mm 2.5 mm 26 + C* 25 + C* C* 2.5 mm 25 + C* C* C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature + C. For example 26 C+ C) at the rated MSL level. 35 <2.5 mm 24 +/-5 C 225 +/-5 C 2.5 mm 225 +/-5 C 225 +/-5 C Customer Service npec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : Fax :
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More informationApplications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC
Hall Effect Micro Switch IC Features Micro Power Operation for Battery pplications Chopper Stabilized mplifier Independent of North or South Pole Magnet, Easy for Manufacture Small Size Package Lead Free
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 150V/35A, R DS(ON) = 10V 100% UIS + R g. = 38mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 15V/35A, R DS(ON) = 38mW(max.) @ V GS = V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G DS Top
More informationSM7320ESQG. Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET. Channel 1 30V/64A, R DS(ON) = 2.5mΩ (max.
Dual N-Channel Enhancement Mode MOSFET Features Pin Description Channel 3V/64A, R DS(ON) = 5.2mΩ (max.) @ = V R DS(ON) = 7.5mΩ (max.) @ = 4.5V Channel 2 3V/85A, G2 S2S2S2 D G DD S/D2 (Pin 9) DFN5x6D-8_EP2
More informationHandling Code Temperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, R DS(ON) =.5mW (max.) @ V GS =V R DS(ON) =14.5mW (max.) @ V GS =4.5V 0% UIS + R g Tested D G S Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/60A, R DS(ON) =5.7mW V GS. =10V =9mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/6A, R DS(ON) =5.7mW (Max.) @ V GS =V R DS(ON) =9mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationSM4377NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V = 9.6mW (max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5A, R DS(ON) = 7mW (max.) @ V GS =V R DS(ON) = 9.6mW (max.) @ V GS =4.5V Provide Excellent Qgd x Rds-on % UIS + R g Tested Reliable and Rugged
More informationS1 / D2 (3)(4) (2)(5)(6)(7)
Dual N-Channel Enhancement Mode MOSFET Features Channel 3V/24A, R DS(ON) = 3.9mW (max.) @ = V R DS(ON) = 6.5mW (max.) @ = 4.5V Channel 2 3V/44A, R DS(ON) =.2mW (max.) @ =V R DS(ON) = 2mW (max.) @ =4.5V
More informationSymbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T
More informationHandling Code Temperature Range. TU : Tube. Assembly Material
N-Channel Enhancement Mode MOSFET Features Pin Description 650V/20A, R DS(ON) = 0.8W(max.) @ V GS = V V @Tj, max=750v (typ.) DS Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available
More informationOUT2 1 IN- Package Code X : MSOP - 8. Temperature Range. I : -40 to 105 C Handling Code TR : Tape & Reel. Handling Code.
Single-Phase Full-Wave Motor Driver for Silent Fan Motor Features Single Phase Full Wave Fan Driver Silent Driver Low Supply Current Built-in Lock Protection and Auto Restart Function (External Capacitor
More informationV OUT. Speed control voltage (V SET. Package Code. K : SOP-8 Operating Ambient Temperature Range I : -40 to 85 C Handling Code TR : Tape & Reel
Low Dropout 6mA Linear Regulator for DC Fan Control Features Low Dropout Voltage: mv (typical) @ 6mA Low Quiescent Current: 4mA Selectable Adjustable/Full Speed Mode O/I Voltage Ratio in Adjustable Mode
More informationGeneral Description. Features. Applications. Pin Configuration. 1A Low Dropout, Fast Response Fixed Voltage Regulator APL1565A. Front View for SOP-8
1A Low Dropout, Fast Response Fixed Voltage Regulator Features General Description Guaranteed Output Voltage Accuracy within 2% Fast Transient Response Load Regulation : 1mV Typ. Line Regulation : 4mV
More informationFeatures. General Description. Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC
Hall Effect Micro Switch IC Features General Description Micro Power Operation for Battery Applications Chopper Stabilized Amplifier Independent of North or South Pole Magnet, Easy for Manufacture Small
More informationP-Channel Enhancement Mode MOSFET
Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of
More informationRU20P5E. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
P-Channel Advanced Power MOSFET Features -2V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-4.5V R DS (ON) =65mΩ(Typ.)@V GS =-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationRU20P7C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. -20V/-5A, R DS (ON) GS =-2.5V
P-Channel Advanced Power MOSFET Features -V/-5A, R DS (ON) =mω(typ.)@v GS =-4.5V R DS (ON) =3mΩ(Typ.)@V GS =-.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationRU20P4C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings SOT23-3. Power Management Load Switch.
P-Channel Advanced Power MOSFET Features -20V/-4A, RDS (ON) =40m (Typ.) @ VGS=-4.5V RDS (ON) =55m (Typ.) @ VGS=-2.5V Pin Description Low R DS (ON) Super High Dense Cell Design Reliable and Rugged Lead
More informationSingle-Phase Full-Wave Motor Driver with Built-in Hall Sensor. General Description
Single-Phase Full-Wave Motor Driver with uilt-in Hall Sensor Features On-chip Hall Sensor High Sensitivity Hall Effect Sensor IC: ±15G(Typ.) uilt-in Lock Protection and Auto Restart Function Speed Controllable
More informationRU1HP60R. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings -100V/-60A,
P-Channel Advanced Power MOSFET Features -V/-6A, R DS (ON) =8mΩ(Typ.)@V GS =-V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated % avalanche tested 75 C Operating
More informationRU30P4B. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
RU3P4B P-Channel Advanced Power MOSFET Features -25V/-4A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =6mΩ(Typ.)@V GS =-4.5V R DS (ON) =8mΩ(Typ.)@V GS =-2.5V Low On-Resistance Super High Dense Cell Design
More informationRU4953BH. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
P-Channel Advanced Power MOSFET Features -3V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =7mΩ(Typ.)@V GS =-4.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationUltra-Low-Noise, High PSRR, Low-Dropout, 300mA Linear Regulator V IN. Enable VIN 1 GND 2 SHDN 3
Ultra-Low-Noise, High PSRR, Low-Dropout, 300mA Linear Regulator Features General Description Wide Operating Voltage: 2.5~6V Low Dropout Voltage: 290mV@3V/300mA Fixed Output Voltages: 1.2~3.6V with Step
More informationRU1HE16L. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings TO252. Power Management. N-Channel MOSFET
N-Channel Advanced Power MOSFET MOSFET Features 100V/16A, RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =85mΩ(Typ.)@VGS=4.5V Pin Description Super High Dense Cell Design ESD protected Reliable and Rugged Lead
More informationHigh Input Voltage, Low Quiescent Current, 150mA LDO Regulator
High Input Voltage, Low Quiescent Current, 150mA LDO Regulator Features Wide Input Voltage Range: 5.4V to 25V Ultra Low Ground Current: 10mA High Output Accuracy: ±2.5% Excellent Load/Line Transient Low
More informationRU30C8H. Complementary Advanced Power MOSFET. Applications. Absolute Maximum Ratings. N-Channel 30V/8A, P-Channel -30V/-7A,
RUC8H Complementary Advanced Power MOSFET Features N-Channel V/8A, R DS (ON) =mω(typ.) @ V GS =V R DS (ON) =6mΩ(Typ.) @ V GS =4.5V P-Channel -V/-7A, R DS (ON) =8mΩ (Typ.) @ V GS =-V R DS (ON) =5mΩ (Typ.)
More informationKS3304DA. Single P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
Single P-Channel Advanced Power MOSFET Features -3V/-A, R DS (ON) =mω(typ.)@v GS =-V R DS (ON) =7.2mΩ(Typ.)@V GS =-4.V Low R DS (ON) Super High Dense Cell Design Reliable and Rugged G Pin Description D
More informationGate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2
N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationPackage Code. Handling Code Temperature Range. Assembly Material
Step-Up Converter for 4 Series White LEDs Driver Features General Description.5 V to 6V Input Voltage Range 400mA Internal Switch Current Up to MHz Switching Frequency 70mA Typical No Load Quiescent Current
More informationRU30D20H. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. S2 Dual N-Channel MOSFET
N-Channel Advanced Power MOSFET Features 3V/2A, R DS (ON) =mω(typ.)@v GS =V R DS (ON) =2mΩ(Typ.)@V GS =4.V Fast Switching Speed Low gate Charge % avalanche tested Lead Free and Green Devices Available
More informationRU205B. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings SOT-23. Load Switch PWM Applications.
N-Channel Advanced Power MOSFET MOSFET Features 20V/5A, RDS (ON) =30mΩ (Typ.) @ VGS=4.5V RDS (ON) =38mΩ (Typ.) @ VGS=2.5V Pin Description Low R DS (ON) Super High Dense Cell Design Reliable and Rugged
More informationHEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationIRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
More informationTaiwan Goodark Technology Co.,Ltd TGD0103M
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationAPL431L. General Description. Applications. Symbol. Functional Diagram. Low Voltage Adjustable Precision Shunt Regulator
Low Voltage Adjustable Precision Shunt Regulator Features Precise Reference Voltage to 1.24V Guaranteed.5% or 1% Reference Voltage Tolerance Sink Current Capability, 8uA to 1mA Quick Turn-on Adjustable
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationN-Channel Power MOSFET 30V, 185A, 1.8mΩ
TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
More informationRU75N08S. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings TO-263. Switching Application Systems.
N-Channel Advanced Power MOSFET Features 75V/80A, RDS (ON) =8mΩ (typ.) @VGS=10V Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche
More information60 V GSS Gate-Source Voltage. 175 C T STG Storage Temperature Range. -55 to 175 C I S Diode Continuous Forward Current
N-Channel Advanced Power MOSFET Features 6V/5A, R DS (ON) =mω(typ.)@vgs=v R DS (ON) =2mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance % avalanche tested Lead Free and Green Devices
More informationTaiwan Goodark Technology Co.,Ltd TGD01P30
TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationPackage Code. QF : VTDFN3x3-10 Operating Ambient Temperature Range I : -40 to 105 o C Handling Code TR : Tape & Reel. Handling Code Temperature Range
Three-Phase Sensor-Less Fan Motor Driver Features General Description Three-Phase Full-Wave Sensor-Less Drive Method Adjustable Forced Commutation Frequency (for Start-up) Built-In External PWM Speed Control
More informationRU6888R. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings TO-220
N-Channel Advanced Power MOSFET MOSFET Features 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100%
More informationPJM8205DNSG Dual N Enhancement Field Effect Transistor
DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection
More informationRU12150R. S N-Channel MOSFET. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. 120V/150A, R DS (ON) =8.5mΩ(Typ.
N-Channel Advanced Power MOSFET Features 2V/5A, R DS (ON) =8.5mΩ(Typ.)@V GS =V Reliable and Rugged % avalanche tested 75 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Pin
More informationGeneral Description. Applications 16 PGND OUT2 2 OUT OUT1 VCC 3 MIN 4 SET 5 NC 2 VCC 3 MIN 4 SET 5 14 SGND 13 CT 12 NC OSC 6 FG 7 OSC 6 FG 7
Direct PWM Variable Speed Fan Motor Driver Features General Description Single Phase Full Wave Fan Driver Low Supply Current Built-In Variable Speed Function Include Hall Bias Circuit Built-In Lock Protection
More informationN-Channel Power MOSFET 100V, 46A, 16mΩ
TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
More informationN-Channel Power MOSFET 150V, 1.4A, 480mΩ
TSM48N5CX6 N-Channel Power MOSFET 5V,.4A, 48mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching Compliant to RoHS directive /65/EU and in accordance to WEEE
More informationN-Channel Power MOSFET 30V, 78A, 3.8mΩ
TSM38N3PQ33 N-Channel Power MOSFET 3V, 78A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
More information