APM9948K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 60V/4A, R DS(ON) = 10V
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1 ual N-Channel Enhancement Mode MOSFET Features 60V/4, R S(ON) = V GS = 0V R S(ON) = V GS = 4.5V Super High ense Cell esign Reliable and Rugged Lead Free and Green evices vailable (RoHS Compliant) Pin escription S G S G Top View of SOP 8 (8) (7) (6) (5) 2 2 pplications Power Management in C/C Converter, C/C Inverter Systems. (2) G (4) G2 Ordering and Marking Information S () N-Channel MOSFET S2 (3) PM9948 PM9948 K : PM9948 XXXXX Lead Free Code Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 50 oc Handling Code TR : Tape & Reel Lead Free Code L : Lead Free evice G : Halogen and Lead Free evice XXXXX - ate Code Note: NPEC lead-free products contain molding compounds/die attach materials and 00% matte tin plate termination finish; which are fully compliant with RoHS. NPEC lead-free products meet or exceed the lead-free requirements of IPC/JEEC J-ST-020C for MSL classification at lead-free peak reflow temperature. NPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 500ppm by weight). NPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
2 bsolute Maximum Ratings (T = 25 C unless otherwise noted) Symbol Parameter Rating Unit V SS rain-source Voltage 60 V GSS Gate-Source Voltage ±20 V I * Continuous rain Current 4 V GS =0V I M * 300µs Pulsed rain Current 6 I S * iode Continuous Forward Current 2.5 T J Maximum Junction Temperature 50 T STG Storage Temperature Range -55 to 50 C P * Maximum Power issipation T =25 C 2 T =00 C 0.8 W R θj * Thermal Resistance-Junction to mbient 62.5 C/W Note: *Surface Mounted on in 2 pad area, t 0sec. Electrical Characteristics (T = 25 C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics BV SS rain-source Breakdown Voltage V GS =0V, I S =250µ 60 V I SS Zero Gate Voltage rain Current V S =48V, V GS =0V T =85 C 30 V GS(th) Gate Threshold Voltage V S =V GS, I S =250µ.9 3 V I GSS Gate Leakage Current V GS =±6V, V S =0V ±0 µ R S(ON) a rain-source On-state Resistance V GS =0V, I S = V GS =4.5V, I S = iode Characteristics V S a iode Forward Voltage I S =2.5, V GS =0V 0.8. V t rr Reverse Recovery Time 28 ns I S =4, dl S /dt=00/µs Reverse Recovery Charge 28 nc Q rr µ mω 2
3 Electrical Characteristics (Cont.) (T = 25 C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit ynamic Characteristics b R G Gate Resistance V GS =0V,V S =0V,F=MHz 4.3 Ω C iss Input Capacitance V GS =0V, 600 C oss Output Capacitance V S =30V, 50 Reverse Transfer Capacitance Frequency=.0MHz 30 C rss t d(on) Turn-on elay Time 7 4 T r Turn-on Rise Time V =30V, R L =30Ω, 7 4 I S =, V GEN =0V, t d(off) Turn-off elay Time R G =6Ω Turn-off Fall Time 4 8 T f pf ns Gate Charge Characteristics b Q g Total Gate Charge Q gs Gate-Source Charge V S =30V, V GS =0V, I S =4.9 Gate-rain Charge 3.2 Q gd nc Notes: a : Pulse test ; pulse width 300µs, duty cycle 2%. b : Guaranteed by design, not subject to production testing. 3
4 Typical Characteristics Power issipation rain Current Ptot - Power (W).5.0 I - rain Current () T =25 o C,V G =0V Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) Safe Operation rea Thermal Transient Impedance I - rain Current () Rds(on) Limit 300µs ms 0ms 00ms s C T =25 o C Normalized Transient Thermal Resistance Single Pulse uty = 0.5 Mounted on in 2 pad R θj :62.5 o C/W E-3 E-4 E VS - rain - Source Voltage (V) Square Wave Pulse uration (sec) 4
5 Typical Characteristics (Cont.) Output Characteristics rain-source On Resistance 6 00 I - rain Current () V GS = 4,4.5,5,6,7,8,9,0V 3.5V 3V RS(ON) - On - Resistance (mω) V GS =4.5V V GS =0V VS - rain-source Voltage (V) I - rain Current () rain-source On Resistance Gate Threshold Voltage 90 I =4.6 I S = 250µ 85.4 RS(ON) - On - Resistance (mω) Normalized Threshold Voltage VGS - Gate - Source Voltage (V) Tj - Junction Temperature ( C) 5
6 Typical Characteristics (Cont.) rain-source On Resistance Source-rain iode Forward Normalized On Resistance V GS = 0V I S = 4 IS - Source Current () 20 0 T j =50 o C T j =25 o C 0.2 R j =25 o C: 60mΩ Tj - Junction Temperature ( C) VS - Source - rain Voltage (V) C - Capacitance (pf) Capacitance 000 Frequency=MHz Ciss Coss Crss VS - rain - Source Voltage (V) VGS - Gate - source Voltage (V) V S =30V I S = 4 Gate Charge QG - Gate Charge (nc) 6
7 Package Information SOP-8 SEE VIEW E E h X 45 e b c 2 VIEW L 0.25 GUGE PLNE SETING PLNE S Y M SOP-8 B O L MIN. MX. MIN MX b c E E e.27 BSC BSC h L MILLIMETERS INCHES Note:. Follow JEEC MS imension does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. imension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 0 mil per side. 7
8 Carrier Tape & Reel imensions O0 P0 P2 P H E O B T B0 W F K0 B 0 SECTION - SECTION B-B d T pplication H T C d W E F SOP ± MIN MIN MIN. 2.0± ± ±0.05 P0 P P2 0 T 0 B0 K ± ± ± MIN. 6.40± ± ± (mm) evices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel
9 Reflow Condition (IR/Convection or VPR Reflow) T P Ramp-up tp Critical Zone T L to T P Temperature T L Tsmax Tsmin ts Preheat t L Ramp-down 25 t 25 C to Peak Reliability Test Program Time Test item Method escription SOLERBILITY MIL-ST C, 5 sec HOLT MIL-ST Hrs C PCT JES-22-B, Hrs, 00%RH, 2 C TST MIL-ST C~50 C, 200 Cycles Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly verage ramp-up rate (T L to T P ) 3 C/second max. 3 C/second max. Preheat 00 C 50 C - Temperature Min (Tsmin) - Temperature Max (Tsmax) 50 C 200 C seconds seconds - Time (min to max) (ts) Time maintained above: - Temperature (T L ) - Time (t L ) 83 C seconds 27 C seconds Peak/Classification Temperature (Tp) See table See table 2 Time within 5 C of actual Peak Temperature (tp) 0-30 seconds seconds Ramp-down Rate 6 C/second max. 6 C/second max. Time 25 C to Peak Temperature 6 minutes max. 8 minutes max. Note: ll temperatures refer to topside of the package. Measured on the body surface. 9
10 Classification Reflow Profiles (Cont.) Table. SnPb Eutectic Process Package Peak Reflow Temperatures Package Thickness Volume mm 3 <350 Volume mm <2.5 mm /-5 C /-5 C 2.5 mm /-5 C /-5 C Table 2. Pb-free Process Package Classification Reflow Temperatures Package Thickness Volume mm 3 <350 Volume mm Volume mm 3 >2000 <.6 mm C* C* C*.6 mm 2.5 mm C* C* C* 2.5 mm C* C* C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0 C. For example 260 C+0 C) at the rated MSL level. Customer Service npec Electronics Corp. Head Office : No.6, using st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : 2F, No., Lane 28, Sec 2 Jhongsing Rd., Sindain City, Taipei County 2346, Taiwan Tel : Fax :
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More informationDate Code Assembly Material
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More informationPackage Code. Date Code YYXXX WW
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Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 2V/5A, R DS(ON) =38mW(max.) @ =4.5V R DS(ON) =54mW(max.) @ =2.5V R DS(ON) =85mW(max.) @ =.8V P-Channel -2V/-3.3A, R DS(ON)
More informationSM2001CS K : Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/9.
Dual Enhancement Mode MOSFET (N- and P-Channel) Features N-Channel V/9.5A, P-Channel R DS(ON) =4mW(max.) @ = 4.5V R DS(ON) =8mW(max.) @ =.5V -V/-6A, R DS(ON) =45mW(max.) @ =-4.5V R DS(ON) =65mW(max.) @
More informationG : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX
P-Channel Enhancement Mode MOSFET Features -2V/-95A, = 3.6mΩ(max.) @ =-1V = 4.6mΩ(max.) @ =-4.5V = 7mΩ(max.) @ =-2.5V = 1mΩ(max.) @ =-1.8V HBM ESD protection level of 2.3KV typical 1% UIS + R g Tested
More informationSM4377NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V = 9.6mW (max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5A, R DS(ON) = 7mW (max.) @ V GS =V R DS(ON) = 9.6mW (max.) @ V GS =4.5V Provide Excellent Qgd x Rds-on % UIS + R g Tested Reliable and Rugged
More informationSymbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T
More informationSM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS
More informationApplications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC
Hall Effect Micro Switch IC Features Micro Power Operation for Battery pplications Chopper Stabilized mplifier Independent of North or South Pole Magnet, Easy for Manufacture Small Size Package Lead Free
More informationS1 / D2 (3)(4) (2)(5)(6)(7)
Dual N-Channel Enhancement Mode MOSFET Features Channel 3V/24A, R DS(ON) = 3.9mW (max.) @ = V R DS(ON) = 6.5mW (max.) @ = 4.5V Channel 2 3V/44A, R DS(ON) =.2mW (max.) @ =V R DS(ON) = 2mW (max.) @ =4.5V
More informationHandling Code Temperature Range. TU : Tube. Assembly Material
N-Channel Enhancement Mode MOSFET Features Pin Description 650V/20A, R DS(ON) = 0.8W(max.) @ V GS = V V @Tj, max=750v (typ.) DS Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available
More informationV OUT. Speed control voltage (V SET. Package Code. K : SOP-8 Operating Ambient Temperature Range I : -40 to 85 C Handling Code TR : Tape & Reel
Low Dropout 6mA Linear Regulator for DC Fan Control Features Low Dropout Voltage: mv (typical) @ 6mA Low Quiescent Current: 4mA Selectable Adjustable/Full Speed Mode O/I Voltage Ratio in Adjustable Mode
More informationOUT2 1 IN- Package Code X : MSOP - 8. Temperature Range. I : -40 to 105 C Handling Code TR : Tape & Reel. Handling Code.
Single-Phase Full-Wave Motor Driver for Silent Fan Motor Features Single Phase Full Wave Fan Driver Silent Driver Low Supply Current Built-in Lock Protection and Auto Restart Function (External Capacitor
More informationGeneral Description. Features. Applications. Pin Configuration. 1A Low Dropout, Fast Response Fixed Voltage Regulator APL1565A. Front View for SOP-8
1A Low Dropout, Fast Response Fixed Voltage Regulator Features General Description Guaranteed Output Voltage Accuracy within 2% Fast Transient Response Load Regulation : 1mV Typ. Line Regulation : 4mV
More informationRU3030M2. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
N-Channel Advanced Power MOSFET Features 3V/3A, R S (ON) =mω(typ.)@v GS =V R S (ON) =5mΩ(Typ.)@V GS =4.5V Super High ense Cell esign Fast Switching Speed Low gate Charge % avalanche tested Lead Free and
More informationG S. Drain-Source Voltage -60 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs
More informationG S. Drain-Source Voltage -30 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W Linear Derating Factor 0.
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -3V Surface Mount evice R S(ON) 75mΩ RoHS-compliant, Halogen-free G S I -3.7A SS escription Advanced Power MOSFETs
More informationG S. Drain-Source Voltage -40 V Gate-Source Voltage. P D at T A =25 C Total Power Dissipation 1.38 W T STG
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -V Surface Mount evice R S(ON) 9mΩ G RoHS-compliant, halogen-free I -3.A S SS escription Advanced Power MOSFETs from
More informationG S. Drain-Source Voltage -16 V Gate-Source Voltage. ±8 V at T = 70 C Continuous Drain Current 3
AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -1V Surface Mount evice R S(ON) mω G RoHS-compliant, halogen-free I -A S SS escription Advanced Power MOSFETs
More informationG S. Drain-Source Voltage 30 V Gate-Source Voltage ± 8 V at T = 70 C Continuous Drain Current 3. P D at T A =25 C Total Power Dissipation 1.
AP236AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate rive Lower On-resistance Surface-Mount evice R S(ON) 35mΩ RoHS-compliant, Halogen-free G S I 5A BV SS 3V escription Advanced Power
More informationG S. Drain-Source Voltage 30 V Gate-Source Voltage + 20 V at T = 70 C Continuous Drain Current 3
N-channel Enhancement-mode Power MOSFET Simple rive Requirement Low Gate Charge Surface Mount evice R S(ON) 2mΩ RoHS-compliant, halogen-free G S I.7A BV SS 3V escription Advanced Power MOSFETs from APEC
More informationS S. Drain-Source Voltage -30 V Gate-Source Voltage + 25 V. at T = 70 C Continuous Drain Current 3
P-channel Enhancement-mode Power MOSFET Simple rive Requirement Low On-resistance BV -3V Fast Switching Performance R S(ON) mω G RoHS-compliant, Halogen-free I -9. S SS escription dvanced Power MOSFETs
More informationV DSS R DS(on) max (mω)
P- 94087 IRF724 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance P-Channel MOSFET vailable in Tape & Reel Ω) I V SS R S(on) max (mω) -40V 4@V GS = -0V -6.2 70@V GS = -4.5V -5.0 escription
More informationAdvanced Power Electronics Corp.
AP37GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -.A SS escription Advanced Power
More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
P-900 IRF7809V N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications % Tested for R
More informationFeatures. General Description. Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC
Hall Effect Micro Switch IC Features General Description Micro Power Operation for Battery Applications Chopper Stabilized Amplifier Independent of North or South Pole Magnet, Easy for Manufacture Small
More informationIRF7240PbF HEXFET Power MOSFET
l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount vailable in Tape & Reel Lead-Free P- 95253 IRF7240PbF HEXFET Power MOSFET V SS R S(on) max I -40V 0.05@V GS = -0V -0.5 0.025@V GS = -4.5V
More informationP-Channel Enhancement Mode MOSFET
Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of
More informationIRF7811AVPbF IRF7811AVPbF
P-9525 IRF78VPbF IRF78VPbF N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications %
More informationAUTOMOTIVE GRADE. Top View
UTOMOTIVE GRE UIRF7207Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P-Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free,
More informationIRF5852. HEXFET Power MOSFET V DSS R DS(on) max (W) I D
l l l l l Ultra Low On-Resistance ual N-Channel MOSFET Surface Mount vailable in Tape & Reel Low Gate Charge P - 93999 IRF5852 HEXFET Power MOSFET V SS R S(on) max (W) I 20 V 0.090@V GS = 4.5V 2.7 0.20@V
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
l Generation V Technology l Ultra Low On-Resistance l ual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l Lead-Free escription Fifth Generation HEXFETs
More informationAdvanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.
dvanced Power P-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOSFET Simple rive Requirement BV SS -3V Small Package Outline R S(ON) 8mΩ Surface Mount evice I - 3.2 RoHS Compliant escription SOT-23 G S
More informationAP2311GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.
Halogen-Free Product dvanced Power P-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOSFET Simple rive Requirement BV SS -6V Small Package Outline R S(ON) mω Surface Mount evice I -. RoHS Compliant SOT-3
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
More informationAUTOMOTIVE GRADE. Orderable Part Number AUIRF7416Q SO-8 Tape and Reel 4000 AUIRF7416QTR
UTOMOTIVE GRE UIRF746Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free,
More informationGreen. Features. I D T C = +25 C (Note 9) 100A 100A. Top View Pin Configuration
Product Summary Green 4V N-CHANNEL ENHANCEMENT MOE MOSFET POWERI Features % Unclamped Inductive Switching Ensures More Reliable BV SS 4V R S(ON) max.8mω @ V GS = V 3.mΩ @ V GS = 4.5V I T C = +5 C (Note
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High Input Voltage, Low Quiescent Current, 150mA LDO Regulator Features Wide Input Voltage Range: 5.4V to 25V Ultra Low Ground Current: 10mA High Output Accuracy: ±2.5% Excellent Load/Line Transient Low
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
l Generation V Technology l Ultra Low On-Resistance l ual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs
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YM AVANCE INFORMATION 3V N-CHANNEL ENHANCEMENT MOE MOSFET Product Summary V (BR)SS 3V escription R S(ON) max I max T A = +25 C 17mΩ @ V GS = 1V 8.4A 28mΩ @ V GS = 4.5V 6.8A This new generation MOSFET is
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Low Voltage Adjustable Precision Shunt Regulator Features Precise Reference Voltage to 1.24V Guaranteed.5% or 1% Reference Voltage Tolerance Sink Current Capability, 8uA to 1mA Quick Turn-on Adjustable
More informationHEXFET Power MOSFET for DC-DC Converters. Absolute Maximum Ratings Parameter Symbol IRF7828PbF Units Drain-Source Voltage V DS
P-95214A EXFET Power MOSFET for C-C Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Lead-Free S S 1 2 8 7 A escription This
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Single-Phase Full-Wave Motor Driver with uilt-in Hall Sensor Features On-chip Hall Sensor High Sensitivity Hall Effect Sensor IC: ±15G(Typ.) uilt-in Lock Protection and Auto Restart Function Speed Controllable
More informationI, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A)
l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
More informationIRF6614PbF IRF6614TRPbF DirectFET Power MOSFET
Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHS Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Ultra Low On-Resistance ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Ease of Paralleling Lead-Free G IRFZ34NPbF HEXFET Power MOSFET S P - 94807 V SS = 55V R
More informationRU1HP60R. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings -100V/-60A,
P-Channel Advanced Power MOSFET Features -V/-6A, R DS (ON) =8mΩ(Typ.)@V GS =-V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated % avalanche tested 75 C Operating
More informationV DSS R DS(on) max Qg 30V GS = 10V 44nC
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters P - 9737 HEXFET Power MOSFET V SS R S(on) max Qg 30V 2.8m:@V GS = V 44nC Benefits
More informationRU30C8H. Complementary Advanced Power MOSFET. Applications. Absolute Maximum Ratings. N-Channel 30V/8A, P-Channel -30V/-7A,
RUC8H Complementary Advanced Power MOSFET Features N-Channel V/8A, R DS (ON) =mω(typ.) @ V GS =V R DS (ON) =6mΩ(Typ.) @ V GS =4.5V P-Channel -V/-7A, R DS (ON) =8mΩ (Typ.) @ V GS =-V R DS (ON) =5mΩ (Typ.)
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