Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/9A, R DS(ON) = V GS = 4.5V = 4V = 3.

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1 ual N-Channel Enhancement Mode MOSFET Features 2V/9, = = 4.5V = = 4V = 3.7V = = 3.1V = = 2.5V Reliable and Rugged ES Protected Lead Free and Green evices vailable (RoHS Compliant) Pin escription S1 S1 G1 S2 S2 G2 Top View of TSSOP-8 (1) (8) pplications (4) G1 (5) G2 Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S1 (2)(3) S2 (6)(7) N-Channel MOSFET Ordering and Marking Information SM9994S SM9994S O : SM9994 XXXXX ssembly Material Handling Code Temperature Range Package Code Package Code O : TSSOP-8 Operating Junction Temperature Range C : -55 to 15 o C Handling Code TR : Tape & Reel (4ea/reel) ssembly Material G : Halogen and Lead Free evice XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEEC J-ST-2 for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1

2 bsolute Maximum Ratings (T = 25 C unless otherwise noted) Symbol Parameter Rating Unit Common Ratings V SS rain-source Voltage 2 S Gate-Source Voltage ±12 V I T =25 C 9 Continuous rain Current T =7 C 7.5 I M Continuous rain Current T =25 C 36 I S iode Continuous Forward Current 2 T J Maximum Junction Temperature 15 T STG Storage Temperature Range -55 to 15 C P a R qj T =25 C 1.25 Maximum Power issipation W T =7 C.8 Thermal Resistance-Junction to mbient t s C/W Note a:surface Mounted on 1in 2 pad area, t s 2

3 Electrical Characteristics (T = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BV SS rain-source Breakdown Voltage =V, I S =25m V I SS Zero Gate Voltage rain Current V S =16V, =V T J =85 C (th) Gate Threshold Voltage V S =, I S =25m V I GSS Gate Leakage Current =±12V, V S =V - - ± m b rain-source On-state Resistance iode Characteristics V S b =4.5V, I S = =4V, I S =8-7.8 =3.7V, I S =7-8.5 =3.1V, I S = =2.5V, I S = iode Forward Voltage I S =2, =V V t rr Reverse Recovery Time ns I S =5.5, dl S /dt=/ms Reverse Recovery Charge nc Q rr ynamic Characteristics c R G Gate Resistance =V,V S =V,f=1MHz W C iss Input Capacitance =V, C oss Output Capacitance V S =V, Reverse Transfer Capacitance Frequency=1.MHz C rss t d(on) Turn-on elay Time t r Turn-on Rise Time V =V, R L =W, I S =1, V GEN =V, t d(off) Turn-off elay Time R G =6W Turn-off Fall Time t f Gate Charge Characteristics c Q g Total Gate Charge Q gs Gate-Source Charge V S =V, =4.5V, I S = Gate-rain Charge Q gd Note b:pulse test ; pulse width 3ms, duty cycle 2%. Note c:guaranteed by design, not subject to production testing. m mw pf ns nc 3

4 Typical Operating Characteristics Power issipation rain Current P tot - Power (W) I - rain Current () T =25 o C T =25 o C,V G =4.5V T j - Junction Temperature ( o C) T j - Junction Temperature ( o C) Safe Operation rea Thermal Transient Impedance uty =.5 I - rain Current () 1.1 Rds(on) Limit 3ms 1ms ms ms 1s C Normalized Effective Transient Single Pulse.1.2 T =25 o C V S - rain-source Voltage (V) Mounted on 1in 2 pad R qj : o C/W 1E-3 1E-4 1E Square Wave Pulse uration (sec) 4

5 Typical Operating Characteristics (Cont.) Output Characteristics rain-source On Resistance =2,3,4,5,6,7,8,9,V 12 I - rain Current () V 1.5V - On Resistance (mw) =3.7V =4V =2.5V =3.1V =4.5V V S - rain-source Voltage (V) I - rain Current () Gate-Source On Resistance Gate Threshold Voltage 3 I S =9 1.6 I S =25m On Resistance (mw) Normalized Threshold Voltage Gate-Source Voltage (V) T j - Junction Temperature ( o C) 5

6 Typical Operating Characteristics (Cont.) rain-source On Resistance Source-rain iode Forward = 4.5V I S = 9 4 Normalized On Resistance C - Capacitance (nc) R j =25 o C: 7.6mW Crss T j - Junction Temperature ( o C) Capacitance Coss Frequency=1MHz Ciss - Gate-Source Voltage (V) I S - Source Current () 1 T j =15 o C T j =25 o C V S - Source-rain Voltage (V) V S =V I S = 9 Gate Charge V S - rain-source Voltage (V) Q G - Gate Charge (nc) 6

7 valanche Test Circuit and Waveforms VS L tp VSX(SUS) UT IS VS RG V V tp IL.1W ES tv Switching Time Test Circuit and Waveforms VS UT R VS 9% RG VGS V tp % VGS td(on) tr td(off) tf 7

8 Package Information TSSOP-8 SEE VIEW E1 E e b C 2.25 GUGE PLNE 1 VIEW L SETING PLNE S Y M B MILLIMETERS O L MIN. MX. 1 c E1 e L b.19.3 E TSSOP-8 MIN..2 INCHES MX BSC.26 BSC Note : 1. Follow JEEC MO imension "" does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. imension "E1" does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed mil per side. - RECOMMENE LN PTTERN UNIT: mm 8

9 Carrier Tape & Reel imensions O P P2 P1 d H W F E1 O1 B T B K B SECTION - SECTION B-B T1 pplication H T1 C d W E1 F TSSOP-8 33.±2. 5 MIN MIN. 2.2 MIN. 12.± ±. 5.5±. P P1 P2 1 T B K 4.±. 8.±. 2.± MIN ±.2 3.4±.2 1.6±.2 (mm) 9

10 Taping irection Information TSSOP-8 USER IRECTION OF FEE Classification Profile

11 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) C 15 C 6-12 seconds 15 C 2 C 6-12 seconds verage ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) 183 C 6-15 seconds 217 C 6-15 seconds See Classification Temp in table 1 See Classification Temp in table 2 2** seconds 3** seconds verage ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm Volume mm 3 >2 <1.6 mm 26 C 26 C 26 C 1.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method escription SOLERBILITY JES-22, B2 5 Sec, 245 C HTRB JES-22, 8 Hrs, 8% of VS Tjmax HTGB JES-22, 8 Hrs, % of VGS Tjmax PCT JES-22, Hrs, %RH, 2atm, 121 C TCT JES-22, 4 5 Cycles, -65 C~15 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, using 1St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: Fax: