Package Code. Handling Code Temperature Range. TR:Tape & Reel. G:Halogen and Lead Free Device
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- Rolf Clark
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1 P-Channel Enhanement Mode MOSFET Features -4V/-74A, R DS(ON) = 8mΩ V GS =-2V R DS(ON) = 9.4mΩ V GS =-1V R DS(ON) = 15mΩ V GS =-4.5V HBM ESD apability level of 8KV typial 1% UIS + R g Tested Reliable and Rugged Lead Free and Green Devies Available (RoHS Compliant) Note : The diode onneted between the gate and soure serves only as protetion against ESD. No gate overvoltage rating is implied. Pin Desription D S G Top View of TO D G Appliations Power Management in LCD TV Inverter. Ordering and Marking Information S P-Channel MOSFET SM427PS Assembly Material Handling Code Temperature Range Pakage Code Pakage Code U:TO Operating Juntion Temperature Range o C:-55 to 15 C Handling Code TR:Tape & Reel Assembly Material G:Halogen and Lead Free Devie SM427PS U: SM427PS XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free produts ontain molding ompounds/die attah materials and 1% matte tin plate termination finish; whih are fully ompliant with RoHS. SINOPOWER lead-free produts meet or exeed the leadfree requirements of IPC/JEDEC J-STD-2D for MSL lassifiation at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS ompliant) and halogen free (Br or Cl does not exeed 9ppm by weight in homogeneous material and total of Br and Cl does not exeed 15ppm by weight). SINOPOWER reserves the right to make hanges to improve reliability or manufaturability without notie, and advise ustomers to obtain the latest version of relevant information to verify before plaing orders. 1
2 Absolute Maximum Ratings Symbol Parameter Rating Unit V DSS Drain-Soure Voltage -4 V GSS Gate-Soure Voltage ±25 a I D a I DP I D I DP I S b I AS Continuous Drain Current (V GS =-1V) T A =25 C -2 T A =7 C -16 3µs Pulsed Drain Current Tested T A =25 C -81 Continuous Drain Current (V GS =-1V) T C =25 C -74 T C =1 C -47 3µs Pulsed Drain Current Tested T C =25 C -298 Diode Continuous Forward Current -37 Avalanhe Current, Single pulse L=.5mH -25 V A E AS b Avalanhe Energy, Single pulse L=.5mH 156 mj T J Maximum Juntion Temperature 15 T STG Storage Temperature Range -55 to 15 P D a P D R θja a R θjc Maximum Power Dissipation Maximum Power Dissipation Thermal Resistane-Juntion to Ambient T A =25 C 6.3 T A =7 C 4. T C =25 C 83 T C =1 C 33 t 1s 2 Steady State 6 Thermal Resistane-Juntion to Case Steady State 1.5 Note a:surfae Mounted on 1in 2 pad area, t 1se. R θja steady state t = 999s. Note b:uis tested and pulse width limited by maximum juntion temperature 15 o C (initial temperature Tj=25 o C). Note :The power dissipation P D is based on T J(MAX) = 15 o C, and it is useful for reduing juntion-to-ase thermal resistane (R θjc) when additional heat sink is used. C W C/W 2
3 Eletrial Charateristis (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit Stati Charateristis BV DSS Drain-Soure Breakdown Voltage V GS =V, I DS =-25µA V I DSS Zero Gate Voltage Drain Current V DS =-32V, V GS =V T J =85 C V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-25µA V I GSS Gate Leakage Current V GS =±2V, V DS =V - - ±1 µa R DS(ON) d Drain-Soure On-state Resistane Diode Charateristis V SD d V GS =-2V, I DS =-25A V GS =-1V, I DS =-25A V GS =-4.5V, I DS =-15A Diode Forward Voltage I SD =-1A, V GS =V V t rr Reverse Reovery Time ns I SD =-25A, dl SD /dt=1a/µs Q rr Reverse Reovery Charge nc Dynami Charateristis e R G Gate Resistane V GS =V,V DS =V,F=1MHz Ω C iss Input Capaitane V GS =V, C oss Output Capaitane V DS =-2V, C rss Reverse Transfer Capaitane Frequeny=1.MHz t d(on) Turn-on Delay Time t V DD =-2V, R L r Turn-on Rise Time =2Ω, I DS =-1A, V GEN =-1V, t d(off) Turn-off Delay Time R G =6Ω t f Turn-off Fall Time Gate Charge Charateristis e Q g Total Gate Charge Q gs Gate-Soure Charge V DS =-2V, V GS =-1V, I DS =-25A Q gd Gate-Drain Charge Note d:pulse test; pulse width 3µs, duty yle 2%. Note e:guaranteed by design, not subjet to prodution testing. µa mω pf ns nc 3
4 Typial Operating Charateristis Power Dissipation Drain Current P tot - Power (W) I D - Drain Current (A) T C =25 o C T C =25 o C,V G =-1V T j - Juntion Temperature ( C) T j - Juntion Temperature ( C) Safe Operation Area Thermal Transient Impedane 8 3 -I D - Drain Current (A) 1 1µs 1 1ms 1ms 1 DC T C =25 o C Rds(on) Limit Normalized Transient Thermal Resistane 1 Duty = E-3 Single Pulse R θjc :1.5 o C/W 1E-4 1E-6 1E-5 1E-4 1E V DS - Drain - Soure Voltage (V) Square Wave Pulse Duration (se) 4
5 Typial Operating Charateristis (Cont.) Output Charateristis Drain-Soure On Resistane 18 V GS =-6,-7,-8,-9,-1,-2V 21 -I D - Drain Current (A) V -4.5V -4V -3.5V -3V R DS(ON) - On - Resistane (mω) V GS =-4.5V V GS =-1V V GS =-2V V DS - Drain - Soure Voltage (V) -I D - Drain Current (A) Gate-Soure On Resistane Gate Threshold Voltage 36 I DS =-25A 1.6 I DS =-25µA R DS(ON) - On - Resistane (mω) Normalized Threshold Voltage (V) V GS - Gate - Soure Voltage (V) T j - Juntion Temperature ( C) 5
6 Typial Operating Charateristis (Cont.) Drain-Soure On Resistane Soure-Drain Diode Forward V GS = -1V I DS = -25A 1 Normalized On Resistane I S - Soure Current (A) 1 1 T j =15 o C T j =25 o C.6 R j =25 o C: 7.5mΩ T j - Juntion Temperature ( C) -V SD - Soure - Drain Voltage (V) Capaitane Gate Charge 45 4 Frequeny=1MHz 1 9 V DS =-2V I DS =-25A C - Capaitane (pf) Ciss 5 Coss Crss V GS - Gate-Soure Voltage (V) V DS - Drain - Soure Voltage (V) Q G - Gate Charge (nc) 6
7 Avalanhe Test Ciruit and Waveforms VDS L tav DUT EAS RG VDD VDD tp IL.1W IAS VDS tp VDSX(SUS) Swithing Time Test Ciruit and Waveforms VDS RG VGS DUT RD VDD VGS 1% td(on) tr td(off) tf tp 9% VDS 7
8 Dislaimer Sinopower Semiondutor, In. (hereinafter Sinopower ) has been making great efforts to development high quality and better performane produts to satisfy all ustomers needs. However, a produt may fail to meet ustomer s expetation or malfuntion for various situations. All information whih is shown in the datasheet is based on Sinopower s researh and development result, therefore, Sinopower shall reserve the right to adjust the ontent and monitor the prodution. In order to unify the quality and performane, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basially follow the rule for eah produt, different proesses may ause slightly different results. The tehnial information speified herein is intended only to show the typial funtions of and examples of appliation iruits for the produts. Sinopower does not grant ustomers expliitly or impliitly, any liense to use or exerise intelletual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of suh tehnial information. The produts are not designed or manufatured to be used with any equipment, devie or system whih requires an extremely high level of reliability, suh as the failure or malfuntion of whih any may result in a diret threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the produts for the above speial purposes. If a produt is intended to use for any suh speial purpose, suh as vehile, military, or medial ontroller relevant appliations, please ontat Sinopower sales representative before purhasing. 8
9 Pakage Information E b3 A 2 E1 L4 D L3 H D1 b e SEE VIEW A GAUGE PLANE L SEATING PLANE.25 VIEW A A1 S TO Y M B MILLIMETERS INCHES O L MIN. MAX. MIN. MAX. A A1 b3 2 D D1 E.13 b.5.89 E1 e H L L BSC L4-1.2 Note : Follow JEDEC TO BSC RECOMMENDED LAND PATTERN 6.25 MIN. 6.8 MIN MIN MIN UNIT: mm 9
10 Carrier Tape & Reel Dimensions OD P P2 P1 A d H A W F E1 OD1 B A T B K B A SECTION A-A SECTION B-B T1 Appliation A H T1 C d D W E1 F TO ±2. 5 MIN MIN. 2.2 MIN. 16.± ±.1 7.5±.5 P P1 P2 D D1 T A B K 4.±.1 8.±.1 2.± MIN ±.2 1.4±.2 2.5±.2 (mm) 1
11 Taping Diretion Information TO USER DIRECTION OF FEED Classifiation Profile 11
12 Classifiation Reflow Profiles Profile Feature Sn-Pb Euteti Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) 1 C 15 C 6-12 seonds 15 C 2 C 6-12 seonds Average ramp-up rate (T smax to T P ) 3 C/seond max. 3 C/seond max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak pakage (T p )* body Temperature Time (t P )** within 5 C of the speified lassifiation temperature (T ) 183 C 6-15 seonds 217 C 6-15 seonds See Classifiation Temp in table 1 See Classifiation Temp in table 2 2** seonds 3** seonds Average ramp-down rate (T p to T smax ) 6 C/seond max. 6 C/seond max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerane for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerane for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table 1. SnPb Euteti Proess Classifiation Temperatures (T) Pakage Thikness Volume mm 3 <35 Table 2. Pb-free Proess Classifiation Temperatures (T) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Pakage Thikness Volume mm 3 <35 Volume mm Volume mm 3 >2 <1.6 mm 26 C 26 C 26 C 1.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Desription SOLDERABILITY JESD-22, B12 5 Se, 245 C HTRB JESD-22, A18 1 Hrs, 8% of VDS Tjmax HTGB JESD-22, A18 1 Hrs, 1% of VGS Tjmax PCT JESD-22, A Hrs, 1%RH, 2atm, 121 C TCT JESD-22, A14 5 Cyles, -65 C~15 C Customer Servie Sinopower Semiondutor, In. 5F, No. 6, Dusing 1St Rd., Hsinhu Siene Park, Hsinhu, 378, Taiwan TEL: Fax:
Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -40V/-44A, R DS(ON) = 25mΩ V GS =-4.5V 100% UIS + R g =-10V
P-Channel Enhanement Mode MOSFET Features Pin Desription -4V/-44A, R DS(ON) = 17mΩ (max.) @ V GS =-V R DS(ON) = 25mΩ (max.) @ V GS =-4.5V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devies
More informationG : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX
P-Channel Enhancement Mode MOSFET Features -2V/-95A, = 3.6mΩ(max.) @ =-1V = 4.6mΩ(max.) @ =-4.5V = 7mΩ(max.) @ =-2.5V = 1mΩ(max.) @ =-1.8V HBM ESD protection level of 2.3KV typical 1% UIS + R g Tested
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.9A, R DS(ON) =43mΩ (Max.) @ V GS =-4.5V R DS(ON) =58mΩ (Max.) @ V GS =-2.5V R DS(ON) =88mΩ (Max.) @ V GS =-1.8V 1% UIS + R g Tested Reliable
More informationSM7320ESQG. Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET. Channel 1 30V/64A, R DS(ON) = 2.5mΩ (max.
Dual N-Channel Enhancement Mode MOSFET Features Pin Description Channel 3V/64A, R DS(ON) = 5.2mΩ (max.) @ = V R DS(ON) = 7.5mΩ (max.) @ = 4.5V Channel 2 3V/85A, G2 S2S2S2 D G DD S/D2 (Pin 9) DFN5x6D-8_EP2
More informationSM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features Pin Configuration -0V/-13A, R DS(ON) =205mΩ (max.) @ V GS =-V R DS(ON) =300mΩ (max.) @ V GS =-4V Reliable and Rugged D S G S D G Lead Free and Green Devices Available
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/15A, R DS(ON) = 10V. = V GS = 4.
N-Channel Enhancement Mode MOSFET Features 100V/15A, R DS(ON) = 100mW(max.) @ V GS = 10V R DS(ON) = 110mW(max.) @ V GS = 4.5V 100% UIS + R g Tested ESD Protection Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/60A, R DS(ON) =5.7mW V GS. =10V =9mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/6A, R DS(ON) =5.7mW (Max.) @ V GS =V R DS(ON) =9mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationHandling Code Temperature Range
N-Channel Enhancement Mode MOSFET Features Pin Description 60V/12A, R DS(ON) = 6.6mW (max.) @ V GS =V R DS(ON) = 8.0mW (max.) @ V GS =4.5V 0% UIS + R g Tested Reliable and Rugged Lead Free and Green Devices
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/5.1A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.1A, R DS(ON) =25mΩ(max.) @ V GS =10V R DS(ON) =35mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 150V/35A, R DS(ON) = 10V 100% UIS + R g. = 38mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 15V/35A, R DS(ON) = 38mW(max.) @ V GS = V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G DS Top
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features -6V/-15, R DS(ON) =93mΩ(max.) @ V GS =-1V R DS(ON) =128mΩ(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) 1% UIS
More informationSM2001CS K : Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/9.
Dual Enhancement Mode MOSFET (N- and P-Channel) Features N-Channel V/9.5A, P-Channel R DS(ON) =4mW(max.) @ = 4.5V R DS(ON) =8mW(max.) @ =.5V -V/-6A, R DS(ON) =45mW(max.) @ =-4.5V R DS(ON) =65mW(max.) @
More informationSM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS
More informationSM4377NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V = 9.6mW (max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5A, R DS(ON) = 7mW (max.) @ V GS =V R DS(ON) = 9.6mW (max.) @ V GS =4.5V Provide Excellent Qgd x Rds-on % UIS + R g Tested Reliable and Rugged
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 40V/66A, R DS(ON) =3.2mW V GS. =10V =4mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 4V/66A, R DS(ON) =3.2mW (Max.) @ V GS =V R DS(ON) =4mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationHandling Code Temperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, R DS(ON) =.5mW (max.) @ V GS =V R DS(ON) =14.5mW (max.) @ V GS =4.5V 0% UIS + R g Tested D G S Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, =50mΩ(typ.) @ =4.5V =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, =90mΩ(typ.) @ =-4.5V =30mΩ(typ.) @ =-2.5V Reliable
More informationAPM8005K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 80V/4.
Dual N-Channel Enhancement Mode MOSFET Features Pin Description 80V/4.7A, R DS(ON) =45mΩ (Typ.) @ V GS = 10V R DS(ON) =55mΩ (Typ.) @ V GS = 5V Reliable and Rugged Lead Free and Green Devices Available
More informationSM2607CSC. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/5A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 2V/5A, R DS(ON) =38mW(max.) @ =4.5V R DS(ON) =54mW(max.) @ =2.5V R DS(ON) =85mW(max.) @ =.8V P-Channel -2V/-3.3A, R DS(ON)
More informationS1 / D2 (3)(4) (2)(5)(6)(7)
Dual N-Channel Enhancement Mode MOSFET Features Channel 3V/24A, R DS(ON) = 3.9mW (max.) @ = V R DS(ON) = 6.5mW (max.) @ = 4.5V Channel 2 3V/44A, R DS(ON) =.2mW (max.) @ =V R DS(ON) = 2mW (max.) @ =4.5V
More informationHandling Code Temperature Range. TU : Tube. Assembly Material
N-Channel Enhancement Mode MOSFET Features Pin Description 650V/20A, R DS(ON) = 0.8W(max.) @ V GS = V V @Tj, max=750v (typ.) DS Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max.
P-Channel Enhancement Mode MOSFET Features -3V/-68, R DS(ON) = 9mW(max.) @ V GS =-V R DS(ON) = 5mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) HBM ESD
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable
More informationHandling Code Temperature Range Package Code. Assembly Material
N-Channel Enhancement Mode MOSFET Features 75V/7 a, R DS(ON) = 4.3mW (Max.) @ V GS =V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) Pin Description D S G Top View of TO-263-3
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable
More informationPackage Code S : SOP-8. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features 100 V/8 A R DS(ON) = 20 m Ω (typ.) @ V GS =10V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description D D D
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/8A, R DS(ON) = 10V. = V GS = 4.5V Reliable and Rugged
N-Channel Enhancement Mode MOSFET Features Pin Description V/8, R DS(ON) = 29mΩ(max.) @ V GS = V R DS(ON) = 33mΩ(max.) @ V GS = 4.5V Reliable and Rugged G D S Lead Free and Green Devices vailable (RoHS
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-9.3, R DS(ON) = 24mW(max.) @ V GS =-V R DS(ON) = 38mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/85A, R DS(ON) =10V = 4.6mW V GS. = 3mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/85, R DS(ON) = 3mW (Max.) @ V GS =V R DS(ON) = 4.6mW (Max.) @ V GS =4.5V Reliable and Rugged D G S Lead Free and Green Devices vailable (RoHS
More informationSM4337NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/55A, R DS(ON) =7.1mW V GS
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/55, R DS(ON) =7.1mW (max.) @ V GS =V R DS(ON) =mw (max.) @ V GS =4.5V % E S (UIS) test ESD Protection D D D D S S S G DFN5x6-8 Pin 1 Lead Free
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max.
SM23NS N-Channel Enhancement Mode MOSFET Features Pin Description 2V/6, R DS(ON) =25mW (max.) @ =V R DS(ON) =3mW (max.) @ =4.5V R DS(ON) =4mW (max.) @ =2.5V R DS(ON) =6mW (max.) @ =.8V D G S Reliable and
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/4.7, R DS(ON) =4mW(max.) @ V GS =V R DS(ON) =6mW(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant)
More informationadvise customers to obtain the latest version of relevant information to verify before placing orders.
N-Channel Enhancement Mode MOSFET Features Pin Description 68V/ 70A R DS(ON) = 6.5mΩ (typ.) @ V GS =V 0% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
More informationP HY1906. B HY1906 ÿ YYXXXJWW G HY1906P/B. Features. N-Channel Enhancement Mode MOSFET V / 120A, R DS(ON)
N-Channel Enhancement Mode MOSFET Features Pin Description 60V / 120A, R DS(ON) = 6.0 mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D
More informationG D S. Package Code U : TO-251-3L HY1908. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A, 7.8 R DS(ON) = mω (typ.) @ V GS =V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S G
More informationPackage Code. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 8V/ 2A R DS(ON) = 2.9 mω (typ.) @ V GS =1V 1% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G D S
More informationP HY4004. B HY4004 ÿ YYXXXJWW G HY4004P/B. Features. N-Channel Enhancement Mode MOSFET. 100% avalanche tested. Switching application
N-Channel Enhancement Mode MOSFET Features Pin Description 40V/ 208A R DS(ON) = 2.5 mω (typ.) @ V GS =0V 00% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) G
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 200A R DS(ON) = 2.9 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationDate Code Assembly Material
N-Channel Enhancement Mode MOSFET Features 80V/ 170A R DS(ON) = 3.8 mω (typ.) @ V GS =10V 100% avalanche tested Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description
More informationFeatures. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =7.5mΩ (typ.) @ =V R DS(ON) =12mΩ (typ.) @ =4.5V Super High Dense Cell Design Reliable and Rugged valanche Rated D G S Top View
More informationN-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/5, R DS(ON) =8.5mΩ (typ.) @ V GS =1V R DS(ON) =15mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design valanche Rated Reliable and Rugged Lead
More informationPackage Code P : TO-220FB-3L. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ (typ.) @ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology
More informationP-Channel Enhancement Mode MOSFET
Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
More informationTemperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =4.8mΩ (typ.) @ V GS =V R DS(ON) =7mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationFeatures. N-Channel Enhancement Mode MOSFET 25V/60A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/6, R DS(ON) =4.5mΩ (typ.) @ V GS =V R DS(ON) =7.5mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationAssembly Material. Handling Code Temperature Range Package Code
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, R DS(ON) =50mΩ(typ.) @ =4.5V R DS(ON) =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, R DS(ON) =90mΩ(typ.) @ =-4.5V R
More informationFeatures. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5, R DS(ON) =38mΩ(Typ.) @ = V R DS(ON) =55mΩ(Typ.) @ = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationPin Description. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/8A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and ) Features Pin Description V/8A, R DS(ON) =mω(typ.) @ =.5V R DS(ON) =3mΩ(typ.) @ =.5V -V/-.3A, R DS(ON) =8mΩ(typ.) @ =-.5V R DS(ON) =5mΩ(typ.) @ =-.5V Super High Dense
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P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3 R DS(ON) = 56mΩ (typ.) @ V GS = -4.5V R DS(ON) = 85mΩ (typ.) @ V GS = -2.5V R DS(ON) = 135mΩ (typ.) @ V GS = -1.8V Super High Dense Cell
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Dual Enhancement Mode MOSFET (N- and ) Features Pin Description N-Channel 4V/6.5A, R DS(ON) = mω (typ.) @ = V R DS(ON) = 8mΩ (typ.) @ = 4.5V -4V/-5A, R DS(ON) = 35mΩ (typ.) @ =-V R DS(ON) = 48mΩ (typ.)
More informationSymbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T
More informationFeatures. N-Channel Enhancement Mode MOSFET 40V/57A, R DS(ON) =10V
PM41NU N-Channel Enhancement Mode MOSFET Features Pin Description 4V/57, R DS(ON) =8.2mΩ (typ.) @ V GS =1V R DS(ON) =13mΩ (typ.) @ V GS =5V Super High Dense Cell Design Reliable and Rugged Lead Free and
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON)
SM268NSC N-Channel Enhancement Mode MOSFET Features Pin escription 3V/7.4, R S(ON) = 7mΩ(max.) @ V GS =V R S(ON) = 2.5mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green evices vailable (RoHS
More informationFeatures. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/9A, R DS(ON) = V GS = 4.5V = 4V = 3.
ual N-Channel Enhancement Mode MOSFET Features 2V/9, = 9.5mW(max.) @ = 4.5V = mw(max.) @ = 4V =.5mW(max.) @ = 3.7V = 11.5mW(max.) @ = 3.1V = 13mW(max.) @ = 2.5V Reliable and Rugged ES Protected Lead Free
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N-Channel Enhancement Mode MOSFET Features Pin Description V/5, R DS(ON) = 35mΩ (Typ.) @ V GS = V R DS(ON) = 45mΩ (Typ.) @ V GS = 4.5V R DS(ON) = mω (Typ.) @ V GS =.5V Super High Dense Cell Design Reliable
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4, =48mΩ(typ.) @ V GS =-4.5V =85mΩ(typ.) @ V GS =-2.5V =135mΩ(typ.) @ V GS =-1.8V Super High Dense Cell Design Reliable and Rugged Lead Free
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N-Channel Enhancement Mode MOFET Features Pin Description 3V/7, R D(ON) =4.5mΩ (typ.) @ V G = V R D(ON) =6mΩ (typ.) @ V G = 4.5V uper High Dense Cell Design valanche Rated Reliable and Rugged Lead Free
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Dual P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-4.9A, R DS(ON) = 53mΩ(typ.) @ V GS = -V R DS(ON) = 8mΩ(typ.) @ V GS = -4.5V S 8 Super High Density Cell Design G 7 Reliable and Rugged
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ual N-Channel Enhancement Mode MOSFET Features 60V/4, R S(ON) = 60mΩ(typ.) @ V GS = 0V R S(ON) = 72mΩ(typ.) @ V GS = 4.5V Super High ense Cell esign Reliable and Rugged Lead Free and Green evices vailable
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P-Channel Advanced Power MOSFET Features -2V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-4.5V R DS (ON) =65mΩ(Typ.)@V GS =-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green
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RU3P4B P-Channel Advanced Power MOSFET Features -25V/-4A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =6mΩ(Typ.)@V GS =-4.5V R DS (ON) =8mΩ(Typ.)@V GS =-2.5V Low On-Resistance Super High Dense Cell Design
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P-Channel Advanced Power MOSFET Features -V/-5A, R DS (ON) =mω(typ.)@v GS =-4.5V R DS (ON) =3mΩ(Typ.)@V GS =-.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
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Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of
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YM 3V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BV DSS 3V R DS(ON) Max 9mΩ @ 25mΩ @ V GS = 2.5V 4mΩ @ V GS =.8V 2mΩ @ V GS =.5V I D Max T C = +25 C 5A 4A A 6A.6mm Profile Ideal for Low
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Green 6V 7 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 6V R DS(ON) max 23mΩ @ V GS = V 28mΩ @ V GS = 4.V Description and Applications I D max T C = +2 C A 4A This MOSFET is designed to meet
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YM ADVANCED INFORMATION 2V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 2V Description R DS(ON) max I D max T A = +25 C 25mΩ @ V GS = 4.5V 6.5A 31mΩ @ V GS = 2.5V 5.9A 6mΩ @ V GS = 1.8V 4.5A
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4V 75 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 4V R DS(ON) max I D max T C = +25 C 5mΩ @ V GS = V 43.6A 25mΩ @ V GS = 4.5V 33A Description and Applications This MOSFET is designed
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