SSM9423. P-Channel Enhancement Mode MOSFET FEATURES. Product Summary SO-8. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

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1 Phnnel Enhncement Mde MOSFET Prduct Summry SO DS () ID () DS(ON) (mω) Mx 7 =. =. =. D (, 6, 7, ) FETUES Super high density cell design fr lw DS(ON). ugged nd relible. SO pckge. Pb free. G () S(,, ) BSOLUTE MXIMUM TINGS (T = unless therwise nted) Prmeter Symbl Limit Unit DrinSurce ltge DS GteSurce ltge GS + Drin TJ = ID 6 Pulsed b IDM DrinSurce Dide Frwrd urrent IS.7 Mximum Pwer Dissiptin PD. W Operting Junctin nd Strge Temperture nge TJ, TSTG t THEML HTEISTIS Therml esistnce, Junctintmbient J /W Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (ev.)

2 Phnnel Electricl hrcteristics (T = unless therwise nted) c Prmeter Symbl nditin Min Typ Mx Unit DrinSurce Brekdwn ltge BDSS GS=, ID= Zer Gte ltge Drin urrent IDSS DS=6, GS= GteBdy Lekge IGSS GS=, DS= n Gte Threshld ltge GS(th) DS=GS ID=.. GS=., ID=6. DrinSurce OnStte esistnce DS(ON) GS=., ID=. m GS=., ID=. 9 OnStte Drin urrent ID(ON) DS=, GS=. Frwrd Trnscnductnce gfs DS=, ID = S Input pcitnce ISS DS=6 Output pcitnce OSS GS= PF everse Trnsfer pcitnce SS f=.mhz 7 TurnOn Dely Time td(on) DD=6, ise Time TurnOff Dely Time tr td(off) ID=, GEN=., ns Fll Time tf GEN=6, 6 Ttl Gte hrge Qg DS=6, GteSurce hrge GteDrin hrge Qgs Qgd ID=., GS=.. n Dide Frwrd ltge SD GS=, ID=.7. Ntes. Surfce Munted n F Brd, t < sec. b. Pulse Test Pulse Width < s, Duty ycle < %. c. Gurnteed by design, nt subject t prductin testing. Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (ev.)

3 ID ) ( urrent Drin, GS =.~. GS =. 6 GS =. GS =....., Drin urrent ( ) ID 6 Tj =..... DS, DrintSurce ltge () GS, GtetSurce ltge () Figure. Output hrcteristics Figure. Thnsfer hrcteristics pcitnce (pf),,, rss iss ss e Onesistnc Nrmlized GS =. ID = DS, DrintSurce ltge () Tj, Junctin Tempertture ( ) O Figure. pcitnce Figure. Onesistnce ritin with Temperture GteSurce ltg e rince () th, hreshld. ID = e Onesistnc GS =. GS =. GS =. 6 Tj, Junctin Temperture ( ) Figure. Gte Threshld ritin with Temperture ID, Drin urrent () Figure 6. Onesistnce ritin with Drin urrent Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (ev.)

4 . O nesistnce ) (.... ID =. IS ) ( urrent SurceDrin, Tj = O Tj = O. 6 7 GS, GtetSurce ltge () SD, Bdy Dide Frwrd ltge () Figure 7. Onesistnce ritin with GtetSurce ltge Figure. Bdy Dide Frwrd ltge ritin with Surce urrent, Gte t Surce ltge ( ) GS DS = 6 ID =. 6 9, Drin urrent ( ) ID 7.. DS(ON) Limit Single Pulse T = ms ms ms s s D. Qg, Ttl Gte hrge (n) SD, DrintSurce ltge () Figure 9. Gte hrge Figure. Mximum Sfe Operting re Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (ev.)

5 DD tn tff GS GEN IN G D L OUT td(n) OUT % tr 9% td(ff) 9% % 9% tf S IN % % % INETED PULSE WIDTH Figure. Switching Test ircuit Figure. Switching Wvefrms ( t), Nrmlized Ef ectiv e T rnsient Therml Impednc e r f.. Duty ycle = Single Pulse PDM t t. J(t) = r(t)* J. J = see dtsheet. TJM T = PDM* J(t). Duty ycle, D = t/t Squre Wve Pulse Durtin (sec) Figure. Nrmlized Therml Trnsient Impednce urve Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (ev.)

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