SSM9423. P-Channel Enhancement Mode MOSFET FEATURES. Product Summary SO-8. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
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1 Phnnel Enhncement Mde MOSFET Prduct Summry SO DS () ID () DS(ON) (mω) Mx 7 =. =. =. D (, 6, 7, ) FETUES Super high density cell design fr lw DS(ON). ugged nd relible. SO pckge. Pb free. G () S(,, ) BSOLUTE MXIMUM TINGS (T = unless therwise nted) Prmeter Symbl Limit Unit DrinSurce ltge DS GteSurce ltge GS + Drin TJ = ID 6 Pulsed b IDM DrinSurce Dide Frwrd urrent IS.7 Mximum Pwer Dissiptin PD. W Operting Junctin nd Strge Temperture nge TJ, TSTG t THEML HTEISTIS Therml esistnce, Junctintmbient J /W Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (ev.)
2 Phnnel Electricl hrcteristics (T = unless therwise nted) c Prmeter Symbl nditin Min Typ Mx Unit DrinSurce Brekdwn ltge BDSS GS=, ID= Zer Gte ltge Drin urrent IDSS DS=6, GS= GteBdy Lekge IGSS GS=, DS= n Gte Threshld ltge GS(th) DS=GS ID=.. GS=., ID=6. DrinSurce OnStte esistnce DS(ON) GS=., ID=. m GS=., ID=. 9 OnStte Drin urrent ID(ON) DS=, GS=. Frwrd Trnscnductnce gfs DS=, ID = S Input pcitnce ISS DS=6 Output pcitnce OSS GS= PF everse Trnsfer pcitnce SS f=.mhz 7 TurnOn Dely Time td(on) DD=6, ise Time TurnOff Dely Time tr td(off) ID=, GEN=., ns Fll Time tf GEN=6, 6 Ttl Gte hrge Qg DS=6, GteSurce hrge GteDrin hrge Qgs Qgd ID=., GS=.. n Dide Frwrd ltge SD GS=, ID=.7. Ntes. Surfce Munted n F Brd, t < sec. b. Pulse Test Pulse Width < s, Duty ycle < %. c. Gurnteed by design, nt subject t prductin testing. Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (ev.)
3 ID ) ( urrent Drin, GS =.~. GS =. 6 GS =. GS =....., Drin urrent ( ) ID 6 Tj =..... DS, DrintSurce ltge () GS, GtetSurce ltge () Figure. Output hrcteristics Figure. Thnsfer hrcteristics pcitnce (pf),,, rss iss ss e Onesistnc Nrmlized GS =. ID = DS, DrintSurce ltge () Tj, Junctin Tempertture ( ) O Figure. pcitnce Figure. Onesistnce ritin with Temperture GteSurce ltg e rince () th, hreshld. ID = e Onesistnc GS =. GS =. GS =. 6 Tj, Junctin Temperture ( ) Figure. Gte Threshld ritin with Temperture ID, Drin urrent () Figure 6. Onesistnce ritin with Drin urrent Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (ev.)
4 . O nesistnce ) (.... ID =. IS ) ( urrent SurceDrin, Tj = O Tj = O. 6 7 GS, GtetSurce ltge () SD, Bdy Dide Frwrd ltge () Figure 7. Onesistnce ritin with GtetSurce ltge Figure. Bdy Dide Frwrd ltge ritin with Surce urrent, Gte t Surce ltge ( ) GS DS = 6 ID =. 6 9, Drin urrent ( ) ID 7.. DS(ON) Limit Single Pulse T = ms ms ms s s D. Qg, Ttl Gte hrge (n) SD, DrintSurce ltge () Figure 9. Gte hrge Figure. Mximum Sfe Operting re Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (ev.)
5 DD tn tff GS GEN IN G D L OUT td(n) OUT % tr 9% td(ff) 9% % 9% tf S IN % % % INETED PULSE WIDTH Figure. Switching Test ircuit Figure. Switching Wvefrms ( t), Nrmlized Ef ectiv e T rnsient Therml Impednc e r f.. Duty ycle = Single Pulse PDM t t. J(t) = r(t)* J. J = see dtsheet. TJM T = PDM* J(t). Duty ycle, D = t/t Squre Wve Pulse Durtin (sec) Figure. Nrmlized Therml Trnsient Impednce urve Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr, Jnury (ev.)
SSM4452. N-Channel Enhancement Mode MOSFET FEATURES. Product Summary SO-8. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
SSM NChnnel Enhncement Mde MOSFET DS () Prduct Summry ID () RDS(ON) (m ) Mx 7 SO @GS = @GS = FETURES 7 @GS =. D ( 7 ) Super high density cell design fr lw RDS(ON). Rugged nd relible. SO pckge. Pb free.
More informationList... Package outline... Features Mechanical data... Maximum ratings... Electrical characteristics Rating and characteristic curves...
SMD P-hannel MOSFET Frmsa MS List List... Package utline... 1 2 Features... 2 Mechanical data... Maximum ratings... 2 2 Electrical characteristics... 3 Rating and characteristic curves... 4~ 5 Pinning
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PD-973B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ7734 K Rads (Si).35Ω 22A* IRHLNJ7334 3K Rads (Si).35Ω 22A* 2N766U3
More informationAM V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process
More informationAM8205 MOSFET+SCHOTTKY DIODE 20V DUAL N-CHANNEL ENHANCEMENT MODE
DESCRIPTION The is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high
More informationSURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary
PD-9454A HEXFET POWER MOSFET SURFACE MOUNT (SMD-) IRF5N52 V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N52 -V.6Ω -3A Fifth Generation HEXFET power MOSFETs from International Rectifier
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DT SHEET MOS FIELD EFFECT TRNSISTOR μp235 DUL Nch MOSFET FOR SWITCHING DESCRIPTION The μp235 is a Dual N-channel MOSFET designed for Li-ion battery protection circuit. Ecologically Flip chip MOSFET for
More informationSSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationList... Package outline... Features Mechanical data... Maximum ratings... Rating and characteristic curves... Pinning information...
N-Channel SM MOSFET ES Prtectin FMOSSK38W Frmsa MS List List... Package utline... Features... Mechanical data... Maximum ratings... Rating and characteristic curves... 3~4 Pinning infrmatin... Marking...
More informationAM2300. AiT Semiconductor Inc. APPLICATION ORDER INFORMATION PIN CONFIGURATION
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). FEATURES 20V/4.0A, RDS(ON)
More informationPDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration.
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationV DS I D (at V GS =-4.5V) R DS(ON) (at V GS =-1.8V) D1 G2 Bottom
2V Dual PChannel MOSFET General Description The AON283 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltage as low as.8v. This device is suitable
More informationPin Define Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1
General Description, N & P Pair enhancement mode MOSFET, uses Advanced Trench to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and
More informationSSFT04N15. Main Product Characteristics V DSS 150V. 130mΩ (typ.) I D. Features and Benefits. Description
Main Product Characteristics V DSS 15V R DS (on) I D 13mΩ (typ.) 4A T4N15 G D S Features and Benefits Advanced MOSFET process technology Ideal for PWM, load switching and general purpose applications Low
More informationGreen Product. S amhop Microelectronics Corp. July Ver 1.2 D1/D 2 S 2 G 2 ID 10 IDM P D. W Operating Junction and Storage Temperature R ange
Green Product S amhop Microelectronics Corp. July.. 6 Ver. Dual N-C hannel E nhancement Mode F ield E ffect T ransistor P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( mω ) Max. @ VGS = 4.V V A 8 @ VGS =.V
More informationVGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A
PD-9726A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level RDS(on) ID IRHLQ7724 K Rads (Si).Ω 2.6A IRHLQ7324 3K Rads (Si).Ω 2.6A International
More informationTaiwan Goodark Technology Co.,Ltd TGD01P30
TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationAP9997GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
RoHS-compliant Product dvanced Power N-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BV DSS V Lower Gate Charge R DS(ON) mω Fast Switching Characteristic I D G Description
More informationV DS. 100% UIS Tested 100% R g Tested. Top View S2 G2 S1 G1
3V AO48 Dual PChannel MOSFET General Description The AO48 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationDual P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP6506 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationSPC4567W. N & P Pair Enhancement Mode MOSFET
DESCRIPTION The SPC4567W is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationSPN6242. N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN6242 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationSSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
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PD-9736 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) 2N763M2 IRHLA797Z4 6V, Quad P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLA797Z4 K Rads
More informationTop View. Symbol Max n-channel Max p-channel Units Drain-Source Voltage Symbol
AO668 V Complementary MOSFET General Description The AO668 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationP-Channel Enhancement Mode Power MOSFET
DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
More informationIRHNJ67234 SURFACE MOUNT (SMD-0.5) PD-97197C REF: MIL-PRF-19500/746. Absolute Maximum Ratings. Product Summary
PD-9797C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67234 K Rads (Si).2Ω 2.4A JANSR2N7593U3 IRHNJ63234 3K Rads (Si).2Ω
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AON289 2V Dual PChannel MOSFET General Description The AON289 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationDevice Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm
SIAI N-Channel Enhancement Mode Power MOSFET DESCRIPTION The SIP3210 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More information20V P-Channel Enhancement-Mode MOSFET
1 3 FEATURES RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System
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WNM2046 Single N-Channel, 20V, 0.71A, Power MOSFET Http://www.sh-willsemi.com (V) 20 Typical Rds(on) (Ω) 20@ =4.5V 60@ =2.5V 0.315@ =1.8V G S escriptions FN1006-3L The WNM2046 is N-Channel enhancement
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2V PChannel MOSFET General Description The AO345 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
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SEMICONDUCTOR TECHNIC DT KHB1D9N6D/I N CHNNE MOS FIED EFFECT TRNSISTOR eneral Description KHB1D9N6D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,
More informationIRHNJ67130 SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/746. Absolute Maximum Ratings PD-95816D. Features: n Low RDS(on) n Fast Switching
PD-9586D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ673 JANSR2N7587U3 V, N-CHANNEL REF: MIL-PRF-95/746 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number
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2N7632UC IRHLUC767Z4 RADIATION HARDENED 6V, Combination N-P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level R DS(on) I D CHANNEL IRHLUC767Z4
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N-Channel Enhancement Mode Field Effect Transistor General Description Features The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable
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DESCRIPTION The SPN9971 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN9971 has been designed specifically to
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AON749 3V PChannel MOSFET General Description The AON749 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
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