SSM4452. N-Channel Enhancement Mode MOSFET FEATURES. Product Summary SO-8. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

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1 SSM NChnnel Enhncement Mde MOSFET DS () Prduct Summry ID () RDS(ON) (m ) Mx 7 = FETURES =. D ( 7 ) Super high density cell design fr lw RDS(ON). Rugged nd relible. SO pckge. Pb free. G () S( ) BSOLUTE MXIMUM RTINGS (T = C unless therwise nted) Prmeter Symbl Limit Unit DrinSurce ltge DS GteSurce ltge GS Drin TJ = C ID Pulsed b IDM DrinSurce Dide Frwrd Current IS.7 Mximum Pwer Dissiptin PD. W Operting Junctin nd Strge Temperture Rnge TJ TSTG t C THERML CHRCTERISTICS Therml Resistnce Junctintmbient R J C/W Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr Jnury (Rev.)

2 SSM NChnnel Electricl Chrcteristics (T = C unless therwise nted) c Prmeter Symbl Cnditin Min Typ Mx Unit DrinSurce Brekdwn ltge BDSS GS= ID= Zer Gte ltge Drin Current IDSS DS= GS= GteBdy Lekge IGSS GS= DS= n Gte Threshld ltge GS(th) DS=GS ID =. DrinSurce OnStte Resistnce RDS(ON) GS= ID= GS= ID= m GS=. ID= 7 OnStte Drin Current ID(ON) DS= GS= 7 Frwrd Trnscnductnce gfs DS= ID= S Input Cpcitnce CISS DS= Output Cpcitnce COSS GS= PF Reverse Trnsfer Cpcitnce CRSS f=.mhz 7 TurnOn Dely Time Rise Time TurnOff Dely Time td(on) tr td(off) DD= ID= GEN= RGEN= 7 ns Fll Time tf RL= Ttl Gte Chrge GteSurce Chrge GteDrin Chrge Qg Qgs Qgd DS= ID= GS= DS= ID= GS=. DS= ID= GS=. Dide Frwrd ltge SD GS= ID=.7.. Ntes. Surfce Munted n FR Brd t < sec. b. Pulse Test Pulse Width < s Duty Cycle < %. c. Gurnteed by design nt subject t prductin testing... nc Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr Jnury (Rev.)

3 SSM ( Current Drin GS = 7 GS = ( Drin Current C Tj = C C... DS DrintSurce ltge () GS GtetSurce ltge () Figure. Output Chrcteristics Figure. Trnsfer Chrcteristics Cpcitnce (pf) C Ciss Css D S(ON) e OnResistnc Nrmlized R GS = ID = Crss DS DrintSurce ltge () 7 Tj Junctin Tempertture ( C) O Figure. Cpcitnce Figure. OnResistnce ritin with Temperture th Nrmlized GteSurce Threshld ltge DS = GS ID = 7 Tj Junctin Temperture ( C) B S Nrmlize D rinsurce Brekdwn ltg e D S d ID = 7 Tj Junctin Temperture ( C) Figure. Gte Threshld ritin with Temperture Figure. Brekdwn ltge ritin with Temperture Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr Jnury (Rev.)

4 SSM. F S ) (S Trnscnductnce g DS = IS ) ( Current SurceDrin. IDS DrinSurce Current () SD Bdy Dide Frwrd ltge () Figure 7. Trnscnductnce ritin with Drin Current Figure. Bdy Dide Frwrd ltge ritin with Surce Current G ) ( Gte t Surce ltge S DS = ID = Qg Ttl Gte Chrge (nc) ( Drin Current.. RDS(ON) Limit GS = Single Pulse T = C DC. SD DrintSurce ltge () s ms ms Figure. Gte Chrge Figure. Mximum Sfe Operting re Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr Jnury (Rev.)

5 SSM DD tn tff GS RGEN IN G D RL OUT td(n) OUT % tr td(ff) % INERTED % % % tf S IN % % % PULSE WIDTH Figure. Switching Test Circuit Figure. Switching Wvefrms Duty Cycle =. Effectiv Impednce r e (t) Nrmlized Trnsient Therml Single Pulse PDM t t. R J(t) = r(t)*r J. R J = see dtsheet. TJM T = PDM*R J(t). Duty Cycle D = t/t Squre Wve Pulse Durtin (sec) Figure. Nrmlized Therml Trnsient Impednce Curve Suth Se Semicnductr reserves the right t mke chnges t imprve relibility r mnufcturbility withut dvnce ntice. Suth Se Semicnductr Jnury (Rev.)