CEM6539 FEATURES. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted. Thermal Characteristics
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1 Dual Enhancement Mode Field Effect Traistor (N and P Channel) PRELIMINRY FETURES,.5, R DS(ON) = GS =. R DS(ON) = GS =.5. -, -.7, R DS(ON) = GS = -. R DS(ON) = GS = Super high dee cell design for extremely low R DS(ON). High power and current handing capability. D D D D 7 5 Lead-free plating ; RoHS compliant. Surface mount Package. SO- S G S G BSOLUTE MXIMUM RTINGS T = 5 C unless otherwise noted Parameter Symbol N-Channel P-Channel Units Drain-Source oltage Gate-Source oltage Drain Current-Continuous Drain Current-Pulsed a DS GS I D I DM ±.5 - ± Maximum Power Dissipation P D. W Operating and Store Temperature Range TJ,Tstg -55 to 5 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-mbient b RθJ.5 C/W This is preliminary information on a new product in development now. Details are subject to change without notice. Rev..ug
2 N-Channel Electrical Characteristics T = 5 C unless otherwise noted Off Characteristics Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) C rss I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR Board, t < sec. c.pulse Test : Pulse Width < µs, Duty Cycle < %. d.guaranteed by design, not subject to production testing. GS =, I D = 5µ DS =, GS = GS =, DS = GS = -, DS = GS = DS, I D = 5µ GS =, I D =.5 GS =.5, I D = DS = 5, GS =, f =. MHz DD =, I D =, GS =, R GEN = Ω DS =, I D =.5, GS = GS =, I S = µ µ µ mω mω
3 P-Channel Electrical Characteristics T = 5 C unless otherwise noted Off Characteristics Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold oltage Static Drain-Source On-Resistance Dynamic Characteristics c Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics c B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward oltage b GS(th) R DS(on) C rss I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.pulse Test : Pulse Width < µs, Duty Cycle < %. c.guaranteed by design, not subject to production testing. GS =, I D = -5µ DS = -, GS = GS =, DS = GS = -, DS = GS = DS, I D = -5µ GS = -, I D = -.5 GS = -.5, I D = -. DS = -, GS =, f =. MHz DD = -, I D = -, GS = -, R GEN = Ω DS = -, I D = -.5, GS = - GS =, I S = µ n n mω 7 mω
4 N-CHNNEL C, Capacitance () ID, Drain Current () GS =,,,5 DS, Drain-to-Source oltage () Figure. Output Characteristics GS =..... C rss DS, Drain-to-Source oltage () Figure. Capacitance ID, Drain Current () RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) T J =5 C GS, Gate-to-Source oltage () Figure. Trafer Characteristics I D =.5 GS = 5 C -55 C Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =5µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure 5. Gate Threshold ariation Figure. Body Diode Forward oltage ariation with Source Current
5 P-CHNNEL ID, Drain Current ()..... GS =,,,5 GS = -ID, Drain Current () T J =5 C 5 C -55 C DS, Drain-to-Source oltage () -GS, Gate-to-Source oltage () Figure 7. Output Characteristics Figure. Trafer Characteristics C, Capacitance () C rss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =.5 GS = DS, Drain-to-Source oltage () Figure 9. Capacitance Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =-5µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure. Gate Threshold ariation Figure. Body Diode Forward oltage ariation with Source Current 5
6 N-CHNNEL GS, Gate to Source oltage () P-CHNNEL -GS, Gate to Source oltage () DS = I D = DS =- I D =-.5 Qg, Total Gate Charge () Figure. Gate Charge Qg, Total Gate Charge () Figure 5. Gate Charge ID, Drain Current () -ID, Drain Current () R DS(ON) Limit s DC ms ms - T =5 C T J =5 C - Single Pulse - - DS, Drain-Source oltage () Figure. Maximum Safe Operating rea R DS(ON) Limit ms ms s DC - T =5 C T J =5 C - Single Pulse - - -DS, Drain-Source oltage () Figure. Maximum Safe Operating rea
7 DD GS RGEN IN G D RL OUT td(on) OUT ton toff tr td(off) 9% 9% % INERTED % tf S IN % 9% 5% 5% PULSE WIDTH Figure 7. Switching Test Circuit Figure. Switching Waveforms r(t),normalized Effective Traient Thermal Impedance - D= Single Pulse - - PDM t t. R J (t)=r (t) * R J. R J=See Datasheet. TJM-T = P* R J (t). Duty Cycle, D=t/t Square Wave Pulse Duration (sec) Figure 9. Normalized Thermal Traient Impedance Curve 7
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More informationDevice Marking Device Device Package Reel Size Tape width Quantity 6075K FNK6075K TO-252-2L Parameter Symbol Limit Unit
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packaging. STB100N6F7 100N6F7 D²PAK Tape and Reel
N-channel 60 V, 4.7 mω typ.,100 A STripFET F7 Power MOSFET in a D²PAK package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STB100N6F7 60 V 5.6 mω 100A 125 W Among the lowest
More informationElectrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Vol
N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationN-Channel Power MOSFET 600V, 18A, 0.19Ω
N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS tested High commutation performance
More informationParameter Symbol Limit Unit
N-Channel Enhancement Mode Power MOSFET Description The PE3050K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationM C C. SI2301A. Features. P-Channel Enhancement Mode Field Effect Transistor SOT-23. Internal Block Diagram
omponents 736 Marilla treet Chatsworth!"# $%!"# I31A Features Halogen free available upon request by adding suffix "-HF" -,-.A, (ON) =1mΩ@ G =-.5 (ON) =15mΩ@ G =-.5 High dee cell design for extremely low
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N7F6 110N7F6 TO-220 Tube
N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max. I D P TOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W TO-220
More informationDual P-Channel MOSFET -60V, -12A, 68mΩ
Dual P-Channel MOSFET -60V, -12A, 68mΩ FEATURES Fast switching Low thermal resistance package Low profile package Pb-free plating RoHS compliant Halogen-free package KEY PERFORMANCE PARAMETERS PARAMETER
More informationSTS10P4LLF6. P-channel 40 V, Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package. Applications. Description. Features
P-channel 40 V, 0.0125 Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package Datasheet - production data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
More informationAOTF409 P-Channel Enhancement Mode Field Effect Transistor
AOTF49 PChannel Enhancement Mode Field Effect Transistor General Description The AOTF49/L uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. With the
More informationFeatures. N-Channel Enhancement Mode MOSFET 25V/60A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/6, R DS(ON) =4.5mΩ (typ.) @ V GS =V R DS(ON) =7.5mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationAP4957AGM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.
RoHS-compliant Product dvanced Power P-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BV DSS -3V Simple Drive Requirement R DS(ON) 6mΩ Dual P MOSFET Package I D -7. Description
More informationAON V P-Channel MOSFET
3V PChannel MOSFET General Description Latest Trench Power MOSFET technology Very Low R DS(ON) at 4.5V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Application System/Load
More informationN-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 25V/5, R DS(ON) =8.5mΩ (typ.) @ V GS =1V R DS(ON) =15mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design valanche Rated Reliable and Rugged Lead
More informationN-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK. Order code V DS R DS(on ) max. I D
Datasheet N-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK package Features TAB DPAK D(2, TAB) 2 1 3 Order code V DS R DS(on ) max. I D STD80N6F7 60 V 8.0 mω 40 A Among the lowest R
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/8A, R DS(ON) = 10V. = V GS = 4.5V Reliable and Rugged
N-Channel Enhancement Mode MOSFET Features Pin Description V/8, R DS(ON) = 29mΩ(max.) @ V GS = V R DS(ON) = 33mΩ(max.) @ V GS = 4.5V Reliable and Rugged G D S Lead Free and Green Devices vailable (RoHS
More informationTSM6866SD 20V Dual N-Channel MOSFET
TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 4.5V 6.0 20 40 @ V GS = 2.5V
More informationFeatures. Order code V DS R DS(on) max I D P TOT. Description. Table 1. Device summary. Order code Marking Packages Packaging
N-channel 2 V,.25 Ω typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 3 STR2N2VH5 2 V.3 Ω (V GS =4.5 V) 2.3 A.35 W 1 SOT-23
More informationTemperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =4.8mΩ (typ.) @ V GS =V R DS(ON) =7mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationHCA80R250T 800V N-Channel Super Junction MOSFET
HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationN-Channel Power MOSFET 600V, 11A, 0.38Ω
N-Channel Power MOSFET 600V, 11A, 0.38Ω FEATURES Super-Junction technology High performance due to small figure-of-merit High ruggedness performance High commutation performance Pb-free plating Compliant
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationSSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationHigh power and current handing capability Lead free product is acquired Surface mount package SOT-23-6L top view
N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted
More informationI D (at V GS =-4.5V) -4A R DS(ON) (at V GS = -1.8V) ESD protected V DS V GS -4 I D T A =70 C -3.5 I DM P D T J, T STG. R θjl
2V PChannel MOSFET General Description The AO345 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features -6V/-15, R DS(ON) =93mΩ(max.) @ V GS =-1V R DS(ON) =128mΩ(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) 1% UIS
More information4V Drive Nch + Pch MOSFET SH8M13
4V Drive Nch + Pch MOSFET SH8M3 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface
More informationUNISONIC TECHNOLOGIES CO., LTD UT4411
UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationP-Channel Enhancement Mode MOSFET
Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
More informationM C C. SI2302A. Features. N-Channel Enhancement Mode Field Effect Transistor SOT-23. Internal Block Diagram
omponents 73 Marilla treet Chatsworth!"# $%!"# I3A Features Halogen free available upon request by adding suffix "-HF",3.A, (ON) =55m @ G =.5 (ON) =8m @ G =.5 High dee cell design for extremely low (ON)
More informationSTS3414. N-Channel Enhancement Mode Field Effect Transistor
reen Product T3 amhop icroelectronics C orp. N-Channel Enhancement ode Field Effect Traistor PRODUCT UARY D ID RD(ON) (mω) ax 5 @ = 3 A @ =.5 75 @ =2.5 FEATURE uper high dee cell design for low RD(ON).
More informationSMD Type. P-Channel MOSFET SI2333DS-HF (KI2333DS-HF) Features. Absolute Maximum Ratings Ta = 25
P-Channel SOT-.9 -.. -. Unit: mm Features VDS (V) =-V ID =-5. A (VGS =-.5V) RDS(ON) < mω (VGS =-.5V) RDS(ON) < mω (VGS =-.5V). -..95 -..9 -.. -..55.. -. +.5 RDS(ON) < 59mΩ (VGS =-.V) Pb Free Package May
More informationTop View. Symbol Max n-channel Max p-channel Units Drain-Source Voltage Symbol
AO668 V Complementary MOSFET General Description The AO668 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationAON V P-Channel MOSFET
AON749 3V PChannel MOSFET General Description The AON749 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
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