Symbol Parameter Typical

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1 PRODUCT SUMMARY (TYPICAL) V DS (V) 650 R DS(on) (m ) 110 Q rr (nc) 54 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI RoHS compliant High frequency operation Applications Compact DC-DC converters AC motor drives Battery chargers Switch mode power supplies GaN Power Low-loss Switch D S G 8x8 PQFN Package (bottom view) Absolute Maximum Ratings (T C =25 C unless otherwise stated) Symbol Parameter Limit Value Unit I D25 C Continuous Drain C =25 C 20 A I D100 C Continuous Drain C =100 C 13 A I DM Pulsed Drain Current (pulse width:100 s) 80 A V DSS Drain to Source Voltage 650 V V TDS Transient Drain to Source Voltage a 800 V V GSS Gate to Source Voltage ±18 V P D25 C Maximum Power Dissipation 96 W T C Case -55 to 150 C Operating Temperature T J Junction -55 to 150 C T S Storage Temperature -55 to 150 C T Csold Soldering peak Temperature b 260 C Thermal Resistance Symbol Parameter Typical Unit R ΘJC Junction-to-Case 1.3 C /W R ΘJA Junction-to-Ambient c 45 C /W Notes a: In off state, spike duty cycle D<0.01, spike duration <1us b: For 10 sec, 1.6mm from the case c: Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling; with 6cm 2 copper area and 70 μm thickness). June 27, 2016, JH 1

2 Electrical Characteristics (T C =25 C unless otherwise stated) Symbol Parameter Min Typical Max Unit Test Conditions Static V DSS-MAX Maximum Drain-Source Voltage V V GS =0 V V GS(th) Gate Threshold Voltage V V DS =V GS, I D =0.3mA R DS(on) R DS(on) I DSS I DSS I GSS Dynamic Drain-Source On-Resistance (T J = 25 C) Drain-Source On-Resistance (T J = 150 C) Drain-to-Source Leakage Current, T J = 25 C Drain-to-Source Leakage Current, T J = 150 C Gate-to-Source Forward Leakage Current Gate-to-Source Reverse Leakage Current C ISS Input Capacitance C OSS Output Capacitance C RSS Reverse Transfer Capacitance C O(er) C O(tr) Output Capacitance, energy related a Output Capacitance, time related b Q g Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge t d(on) Turn-On Delay t r Rise Time T d(off) Turn-Off Delay t f Fall Time Reverse operation mω V GS =8V, I D =13A, T J = 25 C mω V GS =8V, I D =13A,T J = 150 C µa V DS =650V, V GS =0V, T J = 25 C µa V DS =650V, V GS =0V, T J = 150 C V GS = 18 V na V GS = -18 V pf nc ns V GS =0 V, V DS =400 V, f =1 MHz V GS =0 V, V DS =0 V to 400 V V DS =400 V, V GS = 0-8 V, I D = 13 A V DS =400 V, V GS = 0-10 V, I D = 13 A, FB= 120 Ω I S Reverse Current A V GS =0 V, T C =100 o C V SD Reverse Voltage V V GS =0 V, I S =14 A, T J =25 o C V SD Reverse Voltage V V GS =0 V, I S =7 A, T J =25 o C t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc I S =0-13 A, V DD =400 V, di/dt =1000 A/ s, T J =25 o C Notes a: Equivalent capacitance to give same stored energy from 0 to 400V b: Equivalent capacitance to give same charging time from 0 to 400V June 27, 2016, JH 2

3 Typical Characteristic Curves 25 C unless otherwise noted Fig. 1. Typical Output Characteristics T J = 25 o C Parameter: V GS Fig. 2. Typical Output Characteristics T J =150 o C Parameter: V GS Fig. 3. Typical Transfer Characteristics V DS =10 V, Parameter: T J Fig. 4. Normalized On-Resistance I D =13 A, V GS =8 V June 27, 2016, JH 3

4 Typical Characteristic Curves 25 C unless otherwise noted Fig. 5. Typical Capacitance V GS =0 V, f=1 MHz Fig. 6. Typical C OSS Stored Energy Fig. 7. Forward Characteristics of Rev. Diode I S =f(v SD ); parameter Tj Fig. 8. Current Derating Pulse Width 100µs June 27, 2016, JH 4

5 Typical Characteristic Curves 25 C unless otherwise noted Fig. 9. Safe Operating Area Tc = 25 C Fig. 10. Safe Operating Area Tc = 80 C Fig. 11. Transient Thermal Resistance Fig. 12. Power Dissipation June 27, 2016, JH 5

6 Test Circuits and Waveforms VDS 90% VGS 10% td(on) tr td(off) tf ton toff Fig. 13. Switching Time Test Circuit *Ferrite bead 120 at 100MHz Fig. 14. Switching Time Waveform Fig. 15. Test Circuit for Reverse Diode Characteristics Fig. 16. Diode Recovery Waveform June 27, 2016, JH 6

7 MECHANICAL TO-220 Package June 27, 2016, JH 7

8 Important Notice Transphorm Gallium Nitride (GaN) Switches provide significant advantages over silicon (Si) Superjunction MOSFETs with lower gate charge, faster switching speeds and smaller reverse recovery charge. GaN Switches exhibit in-circuit switching speeds in excess of 150 V/ns compared to current silicon technology usually switching at rates less than 50V/ns. The fast switching of GaN devices reduces current-voltage cross-over losses and enables high frequency operation while simultaneously achieving high efficiency. However, taking full advantage of the fast switching characteristics of GaN Switches requires adherence to specific PCB layout guidelines and probing techniques. Transphorm suggests visiting application note Printed Circuit Board Layout and Probing for GaN Power Switches before evaluating Transphorm GaN switches. Below are some practical rules that should be followed during the evaluation. When Evaluating Transphorm GaN Switches DO Minimize circuit inductance by keeping traces short, both in the drive and power loop Minimize lead length of TO-220 and TO- 247 package when mounting to the PCB DO NOT Twist the pins of TO-220 or TO-247 to accommodate GDS board layout Use long traces in drive circuit, long lead length of the devices Use shortest sense loop for probing. Attach the probe and its ground connection directly to the test points Use differential mode probe, or probe ground clip with long wire June 27, 2016, JH 8