CEM7350M FEATURES. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted. Thermal Characteristics
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1 Dual Enhancement Mode Field Effect Traistor (N and P Channel) CEM735M PRELIMINRY FETURES, 3., R DS(ON) = GS =. -, -., R DS(ON) = GS = -. Super high dee cell design for extremely low R DS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D D D D SO-8 3 S G S G BSOLUTE MXIMUM RTINGS T = 5 C unless otherwise noted Parameter Symbol N-Channel P-Channel Units Drain-Source oltage Gate-Source oltage Drain Current-Continuous Drain Current-Pulsed a DS GS I D I DM ± ± Maximum Power Dissipation P D. W Operating and Store Temperature Range TJ,Tstg -55 to 5 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-mbient b RθJ 6.5 C/W This is preliminary information on a new product in development now. Details are subject to change without notice. Rev. 7.ug
2 N-Channel Electrical Characteristics T = 5 C unless otherwise noted Off Characteristics CEM735M Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) C rss I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR Board, t < sec. c.pulse Test : Pulse Width < 3µs, Duty Cycle < %. d.guaranteed by design, not subject to production testing. GS =, I D = 5µ DS =, GS = GS =, DS = GS = -, DS = GS = DS, I D = 5µ GS =, I D = 3 DS = 5, GS =, f =. MHz DD = 5, I D =, GS =, R GEN = 6Ω DS = 8, I D =., GS = GS =, I S = µ n n mω
3 P-Channel Electrical Characteristics T = 5 C unless otherwise noted Off Characteristics CEM735M Parameter Symbol Test Condition Min Typ Max Units Drain-Source Breakdown oltage Zero Gate oltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold oltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Trafer Capacitance Switching Characteristics d B DSS I DSS I GSSF IGSSR Turn-On Delay Time t d(on) Turn-On Rise Time t r Turn-Off Delay Time t d(off) Turn-Off Fall Time t f Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward oltage c GS(th) R DS(on) C rss I S SD Notes : a.repetitive Rating : Pulse width limited by maximum junction temperature. b.surface Mounted on FR Board, t < sec. c.pulse Test : Pulse Width < 3µs, Duty Cycle < %. d.guaranteed by design, not subject to production testing. GS =, I D = -5µ DS = -, GS = GS =, DS = GS = -, DS = GS = DS, I D = -5µ GS = -, I D = -.5 DS = -5, GS =, f =. MHz DD = -5, I D = -, GS = -, R GEN = 6Ω DS = -8, I D = -.5, GS = - GS =, I S = µ n n mω 3
4 N-CHNNEL ID, Drain Current () 6 8 GS =,9,8,6, GS =5 GS = 6 8 DS, Drain-to-Source oltage () Figure. Output Characteristics ID, Drain Current () T J =5 C CEM735M 5 C -55 C 6 8 GS, Gate-to-Source oltage () Figure. Trafer Characteristics C, Capacitance () C rss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =3 GS = DS, Drain-to-Source oltage () Figure 3. Capacitance Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =5µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure 5. Gate Threshold ariation Figure 6. Body Diode Forward oltage ariation with Source Current
5 P-CHNNEL -ID, Drain Current () GS =,9,8,6, GS =5 GS = 6 8 -DS, Drain-to-Source oltage () Figure 7. Output Characteristics -ID, Drain Current () 5 3 CEM735M T J =5 C 5 C -55 C GS, Gate-to-Source oltage () Figure 8. Trafer Characteristics C, Capacitance () C rss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) I D =.5 GS = DS, Drain-to-Source oltage () Figure 9. Capacitance Figure. On-Resistance ariation TH, Normalized Gate-Source Threshold oltage DS = GS I D =-5µ IS, Source-drain current () GS = SD, Body Diode Forward oltage () Figure. Gate Threshold ariation Figure. Body Diode Forward oltage ariation with Source Current 5
6 N-CHNNEL GS, Gate to Source oltage () P-CHNNEL -GS, Gate to Source oltage () BDSS,Normalized Drain-Source Breakdown oltage 8 6 DS =8 I D = DS =-8 I D = Qg, Total Gate Charge () Figure 3. Gate Charge Qg, Total Gate Charge () Figure 5. Gate Charge Tj, Junction Temperature ( C) Figure 7. Breakdown oltage ariation S Temperature ID, Drain Current () -ID, Drain Current () CEM735M R DS(ON) Limit ms ms ms s DC - T =5 C T J =5 C - Single Pulse - 3 DS, Drain-Source oltage () Figure. Maximum Safe Operating rea R DS(ON) Limit ms ms ms s DC - T =5 C T J =5 C - Single Pulse - 3 -DS, Drain-Source oltage () Figure 6. Maximum Safe Operating rea 6
7 CEM735M DD GS RGEN IN G D RL OUT td(on) OUT ton toff tr td(off) 9% 9% % INERTED % tf S IN % 9% 5% 5% PULSE WIDTH Figure 8. Switching Test Circuit Figure 9. Switching Waveforms r(t),normalized Effective Traient Thermal Impedance - D= Single Pulse - - PDM t t. R J (t)=r (t) * R J. R J=See Datasheet 3. TJM-T = P* R J (t). Duty Cycle, D=t/t Square Wave Pulse Duration (sec) Figure. Normalized Thermal Traient Impedance Curve 7
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4V Drive Nch MOSFET RSJ3N Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS. 4.5.3 Features ) Low on-resistance. 2) Built-in G-S Protection Diode. 3. 3. 9...24 2.54.78.4.2 5.8 2.7 () (2) (3)
More informationHCI70R500E 700V N-Channel Super Junction MOSFET
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More informationTPH3202PS TPH3202PS. GaN Power Low-loss Switch PRODUCT SUMMARY (TYPICAL) TO-220 Package. Absolute Maximum Ratings (T C =25 C unless otherwise stated)
PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) ( ) 0.29 Q rr (nc) 29 Features Low Q rr Free-wheeling diode not required Low-side Quiet Tab for reduced EMI GSD pin layout improves high speed design RoHS
More informationN-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 75 8mΩ 8A G D S. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage
More informationParameter Symbol Limit Unit
N-Channel Enhancement Mode Power MOSFET Description The PE3050K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationWPM2005 Power MOSFET and Schottky Diode
WPM5 Power MOSFET and Schottky Diode Features Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low V F Schottky Applications Li--Ion Battery Charging
More informationS2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6
Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.
More informationNew Designs. Not Recommended for. 4V Drive Nch MOSFET. Data Sheet RSJ300N10. 1/ Rev.A. Dimensions (Unit : mm)
4V Drive Nch MOSFET RSJ3N Structure Silicon N-channel MOSFET Features ) Low on-resistance. 2) Built-in G-S Protection Diode. Application Switching Packaging specifications Package Taping Type Code TL Basic
More informationSTP16N65M2, STU16N65M2
STP16N65M2, STU16N65M2 N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STP16N65M2 710
More informationN-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK. Order code V DS R DS(on ) max. I D
Datasheet N-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK package Features TAB DPAK D(2, TAB) 2 1 3 Order code V DS R DS(on ) max. I D STD80N6F7 60 V 8.0 mω 40 A Among the lowest R
More informationSMD Type. P-Channel MOSFET SI2333DS-HF (KI2333DS-HF) Features. Absolute Maximum Ratings Ta = 25
P-Channel SOT-.9 -.. -. Unit: mm Features VDS (V) =-V ID =-5. A (VGS =-.5V) RDS(ON) < mω (VGS =-.5V) RDS(ON) < mω (VGS =-.5V). -..95 -..9 -.. -..55.. -. +.5 RDS(ON) < 59mΩ (VGS =-.V) Pb Free Package May
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationI D (at V GS =-4.5V) -4A R DS(ON) (at V GS = -1.8V) ESD protected V DS V GS -4 I D T A =70 C -3.5 I DM P D T J, T STG. R θjl
2V PChannel MOSFET General Description The AO345 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
More informationACE3006M N-Channel Enhancement Mode MOSFET
Description uses advanced trench technology to provide excellent R DS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationHigh power and current handing capability Lead free product is acquired Surface mount package SOT-23-6L top view
N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted
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PChannel Enhancement Mode Field Effect Transistor General Description The AO4433 uses advanced trench technology to provide excellent R DS(ON) and ultralow low gate charge with a 25V gate rating. This
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More informationACE2020M N-Channel 200-V MOSFET
Description ACE2020M uses advanced trench technology to provide excellent R DS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE4606 SOP-8 Ø330mm 12mm 2500 units
N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted
More informationN- & P-Channel Enhancement Mode Field Effect Transistor
N- & annel Enhancement Mode P8NDG TO-- PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel V 8mΩ A annel -V 8mΩ -A G D S G D S D/D SG S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T A = C Unless
More informationTop View S1 G1 S2 G2. Orderable Part Number Package Type Form Minimum Order Quantity AO4630 SO-8 Tape & Reel Symbol V DS ±12 V GS I D
3V Complementary MOSFET General Description AO463 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 8205A HM8205A TSSOP-8 Ø330mm 12mm 3000 units. Parameter Symbol Limit Unit
Dual N-Channel Enhancement Mode Power MOSFET Description The HM8205A uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This
More informationTSM6866SD 20V Dual N-Channel MOSFET
TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 4.5V 6.0 20 40 @ V GS = 2.5V
More informationHCA80R250T 800V N-Channel Super Junction MOSFET
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RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationOrder code V T Jmax R DS(on) max. I D
Datasheet N-channel 600 V, 0.340 Ω typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 package Features TAB Order code V DS @ T Jmax R DS(on) max. I D STP15N60M2-EP 650 V 0.378 Ω 11 A TO-220 D(2, TAB) 1 2
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationAOL1422 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is ESD protected and
More informationAutomotive-grade dual N-channel 60 V, Ω typ., 5 A STripFET II Power MOSFET in an SO-8 package. Features. Description. Table 1.
Automotive-grade dual N-channel 60 V, 0.035 Ω typ., 5 A STripFET II Power MOSFET in an SO-8 package Features Datasheet - production data Order code V DS R DS(on) max. I D STS5DNF60L 60 V 0.045 Ω 5 A AEC-Q101
More informationUNISONIC TECHNOLOGIES CO., LTD UT4411
UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationPPMT20V4E P-Channel MOSFET
P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) -20 0.037 @ V GS =-4.5V -4 G() S(2)
More informationDual N-Channel Enhancement Mode Field PD1503YVS Effect Transistor
Dual N-Channel Enhancement Mode Field PDYVS PRODUCT SUMMARY V (BR)DSS R DS(ON) I D V.mΩ 9A V mω A 7 4 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T A = C Unless Otherwise Noted) PARAMETERS/TEST
More informationV DS. 100% UIS Tested 100% R g Tested. Top View S2 G2 S1 G1
3V AO48 Dual PChannel MOSFET General Description The AO48 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
More informationSchematic diagram R DS(ON) < V GS =10V. Marking and pin assignment Uninterruptible power supply
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 85H21 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in automotive applications
More information3000/Tape&Reel. 2 P D Maximum Power Dissipation TA = 75 o C 1.44 T J, T stg Operating Junction and Storage Temperature Range
DS = 30 R DS(ON), gs @10, I ds @8.5A = 38mΩ R DS(ON), gs @4.5, I ds @5A = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling
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