IKW40T120. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Transcription

1 Low Loss DuoPack : IGBT in and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Best in class TO247 Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted Power Supply and Fieldstop technology for 1200 V applications offers : very tight parameter distribution high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge Very soft, fast recovery antiparallel EmCon HE diode Qualified according to JEDEC 1 for target applications Pbfree lead plating; RoHS compliant Complete product spectrum and PSpice Models : G PGTO2473 C E Type V CE I C V CE(sat),Tj=25 C T j,max Marking Code Package 1200V 1.7V 150 C K40T120 PGTO2473 Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CE 1200 V DC collector current T C = 25 C T C = 100 C Pulsed collector current, t p limited by T jmax I Cpuls 105 Turn off safe operating area 105 V CE 1200V, T j 150 C Diode forward current T C = 25 C T C = 100 C I C I F A Diode pulsed current, t p limited by T jmax I Fpuls 105 Gateemitter voltage V GE ±20 V Short circuit withstand time 2) t SC 10 µs V GE = 15V, V CC 1200V, T j 150 C Power dissipation P tot 270 W T C = 25 C Operating junction temperature T j C Storage temperature T stg JSTD020 and JESD022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.2 Sep 08

2 Soldering temperature, 1.6mm (0.063 in.) from case for 10s 260 Power Semiconductors 2 Rev. 2.2 Sep 08

3 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R thjc 0.45 K/W junction case Diode thermal resistance, R thjcd 0.81 junction case Thermal resistance, junction ambient R thja 40 Electrical Characteristic, at T j = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. Static Characteristic Collectoremitter breakdown voltage V (BR)CES V GE =0V, I C =1.5mA 1200 Collectoremitter saturation voltage V CE(sat) V GE = 15V, I C = T j =25 C T j =125 C T j =150 C Diode forward voltage V F V GE =0V, I F = T j =25 C T j =125 C T j =150 C Gateemitter threshold voltage V GE(th) I C =1.5mA,V CE =V GE Zero gate voltage collector current I CES V CE =1200V, V GE =0V T j =25 C T j =150 C Gateemitter leakage current I GES V CE =0V,V GE =20V 600 na Transconductance g fs V CE =20V, I C = 21 S Integrated gate resistor R Gint 6 Ω Unit V ma Power Semiconductors 3 Rev. 2.2 Sep 08

4 Dynamic Characteristic Input capacitance C iss V CE =25V, 2500 Output capacitance C oss V GE =0V, 130 Reverse transfer capacitance f=1mhz 110 C rss Gate charge Q Gate V CC =960V, I C = V GE =15V Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) I C(SC) V GE =15V,t SC 10µs V CC = 600V, T j = 25 C pf 203 nc L E 13 nh 210 A Switching Characteristic, Inductive Load, at T j =25 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turnon delay time t d(on) T j =25 C, 48 Rise time t V CC =600V,I C =, r 34 V GE =0/15V, Turnoff delay time t d(off) R 480 G =15Ω, Fall time t f L 2) σ =180nH, 70 Turnon energy E on C 2) σ =39pF 3.3 Energy losses include Turnoff energy E off tail and diode 3.2 Total switching energy reverse recovery. 6.5 E ts AntiParallel Diode Characteristic Diode reverse recovery time t rr T j =25 C, 240 ns Diode reverse recovery charge Q rr V R =600V, I F =, 3.8 µc Diode peak reverse recovery current I rrm di F /dt=80/µs 28 A Diode peak rate of fall of reverse recovery current during t b di rr /dt 370 A/µs Unit ns mj 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 4 Rev. 2.2 Sep 08

5 Switching Characteristic, Inductive Load, at T j =150 C Parameter Symbol Conditions Value min. typ. max. IGBT Characteristic Turnon delay time t d(on) T j =150 C 52 Rise time t V CC =600V,I C =, r 40 V GE =0/15V, Turnoff delay time t d(off) R 580 G = 15Ω, Fall time t f L 1) σ =180nH, 120 Turnon energy E C 1) σ =39pF on 5.0 Energy losses include Turnoff energy E off tail and diode 5.4 Total switching energy reverse recovery E ts AntiParallel Diode Characteristic Diode reverse recovery time t rr T j =150 C 410 ns Diode reverse recovery charge Q rr V R =600V, I F =, 8.8 µc Diode peak reverse recovery current I rrm di F /dt=80/µs 36 A Diode peak rate of fall of reverse recovery current during t b di rr /dt 330 A/µs Unit ns mj 1) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 5 Rev. 2.2 Sep 08

6 10 10 t p =3µs IC, COLLECTOR CURRENT 8 6 T C =80 C T C =110 C I c IC, COLLECTOR CURRENT 1 1A 10µs 50µs 150µs 500µs 2 I c 20ms DC 10Hz 100Hz 1kHz 10kHz 100kHz 0,1A 1V 10V 100V 1000V f, SWITCHING FREQUENCY V CE, COLLECTOREMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (T j 150 C, D = 0.5, V CE = 600V, V GE = 0/+15V, R G = 15Ω) Figure 2. Safe operating area (D = 0, T C = 25 C, T j 150 C;V GE =15V) 7 250W 6 Ptot, POWER DISSIPATION 200W 150W 100W IC, COLLECTOR CURRENT W 1 0W 25 C 50 C 75 C 100 C 125 C 25 C 75 C 125 C T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (T j 150 C) T C, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (V GE 15V, T j 150 C) Power Semiconductors 6 Rev. 2.2 Sep 08

7 V GE =17V 8 V GE =17V IC, COLLECTOR CURRENT V 13V 11V 9V 7V IC, COLLECTOR CURRENT V 13V 11V 9V 7V V 1V 2V 3V 4V 5V 6V V CE, COLLECTOREMITTER VOLTAGE Figure 5. Typical output characteristic (T j = 25 C) 0V 1V 2V 3V 4V 5V 6V V CE, COLLECTOREMITTER VOLTAGE Figure 6. Typical output characteristic (T j = 150 C) IC, COLLECTOR CURRENT =150 C 25 C 0V 2V 4V 6V 8V 10V 12V VCE(sat), COLLECTOREMITT SATURATION VOLTAGE 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V 50 C 0 C 50 C 100 C I C =8 I C = I C =25A I C =1 V GE, GATEEMITTER VOLTAGE Figure 7. Typical transfer characteristic (V CE =20V), JUNCTION TEMPERATURE Figure 8. Typical collectoremitter saturation voltage as a function of junction temperature (V GE = 15V) Power Semiconductors 7 Rev. 2.2 Sep 08

8 t d(off) 1000 ns t, SWITCHING TIMES 100ns 10ns t f t d(on) t r t, SWITCHING TIMES 100 ns 10 ns t d(off) t f t d(on) t r 1ns 2 6 I C, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, =150 C, V CE =600V, V GE =0/15V, R G =15Ω, 1 ns 5Ω 15Ω 25Ω 35Ω 45Ω R G, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, =150 C, V CE =600V, V GE =0/15V, I C =, t d(off) t, SWITCHING TIMES 100ns t f t d(on) t r VGE(th), GATEEMITT TRSHOLD VOLTAGE 7V 6V 5V 4V 3V 2V 1V max. typ. min. 10ns 0 C 50 C 100 C 150 C, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =, R G =15Ω, 0V 50 C 0 C 50 C 100 C 150 C, JUNCTION TEMPERATURE Figure 12. Gateemitter threshold voltage as a function of junction temperature (I C = 1.5mA) Power Semiconductors 8 Rev. 2.2 Sep 08

9 25,0mJ *) E on and E ts include losses due to diode recovery 15 mj *) E on and E ts include losses due to diode recovery E ts * E, SWITCHING ENERGY LOSSES 20,0mJ 15,0mJ 10,0mJ 5,0mJ E ts * E on * E off E, SWITCHING ENERGY LOSSES 10 mj 5 mj E on * E off 0,0mJ I C, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, =150 C, V CE =600V, V GE =0/15V, R G =15Ω, 0 mj 5Ω 15Ω 25Ω 35Ω R G, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, =150 C, V CE =600V, V GE =0/15V, I C =, 15mJ *) E on and E ts include losses due to diode recovery 15mJ *) E on and E ts include losses due to diode recovery E, SWITCHING ENERGY LOSSES 10mJ 5mJ E ts * E off E on * E, SWITCHING ENERGY LOSSES 10mJ 5mJ E ts * E off E on * 0mJ 50 C 100 C 150 C 0mJ 400V 500V 600V 700V 800V, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE =600V, V GE =0/15V, I C =, R G =15Ω, V CE, COLLECTOREMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, =150 C, V GE =0/15V, I C =, R G =15Ω, Power Semiconductors 9 Rev. 2.2 Sep 08

10 C iss VGE, GATEEMITTER VOLTAGE 15V 10V 5V 240V 960V c, CAPACITANCE 1nF 100pF C oss C rss 0V 0nC 50nC 100nC 150nC 200nC 250nC Q GE, GATE CHARGE Figure 17. Typical gate charge (I C =40 A) 10pF 0V 10V 20V V CE, COLLECTOREMITTER VOLTAGE Figure 18. Typical capacitance as a function of collectoremitter voltage (V GE =0V, f = 1 MHz) tsc, SHORT CIRCUIT WITHSTAND TIME 15µs 10µs 5µs IC(sc), short circuit COLLECTOR CURRENT µs 12V 14V 16V V GE, GATEEMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gateemitter voltage (V CE =600V, start at =25 C) 12V 14V 16V 18V V GE, GATEEMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (V CE 600V, T j 150 C) Power Semiconductors 10 Rev. 2.2 Sep 08

11 VCE, COLLECTOREMITTER VOLTAGE 600V 400V 200V V CE 6 2 IC, COLLECTOR CURRENT 6 2 I C 600V 400V 200V I C 0V 0us 0.5us 1us 1.5us V CE 0us 0.5us t, TIME t, TIME Figure 21. Typical turn on behavior (V GE =0/15V, R G =15Ω, T j = 150 C, 1us 1.5us Figure 22. Typical turn off behavior (V GE =15/0V, R G =15Ω, T j = 150 C, 0V ZthJC, TRANSIENT THERMAL RESISTANCE D= K/W K/W R,(K/W) τ, (s) * * * *10 4 single pulse R 1 R 2 ZthJC, TRANSIENT THERMAL RESISTANCE 10 1 K/W 10 2 K/W D= R,(K/W) τ, (s) * * * *10 4 single pulse R 1 R 2 C 1=τ 1/R 1 C 2=τ 2/R 2 C 1=τ 1/R 1 C 2=τ 2/R K/W 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = t p / T) 10 3 K/W 10µs 100µs 1ms 10ms 100ms t P, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=t P /T) Power Semiconductors 11 Rev. 2.2 Sep 08

12 600ns 8µC =150 C trr, REVERSE RECOVERY TIME 500ns 400ns 300ns 200ns 100ns =150 C =25 C Qrr, REVERSE RECOVERY CHARGE 6µC 4µC 2µC =25 C 0ns 40/µs 60/µs 80/µs 100/µs di F /dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (V R =600V, I F =, 0µC 40/µs 60/µs 80/µs 100/µs di F /dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (V R =600V, I F =, Irr, REVERSE RECOVERY CURRENT 35A 3 25A 2 15A 1 5A =150 C =25 C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT 40/µs 30/µs 20/µs 10/µs =25 C =150 C 40/µs 60/µs 80/µs 100/µs di F /dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (V R =600V, I F =, /µs 40/µs 60/µs 80/µs 100/µs di F /dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R =600V, I F =, Power Semiconductors 12 Rev. 2.2 Sep 08

13 10 =25 C C 2,0V I F =8 IF, FORWARD CURRENT 6 VF, FORWARD VOLTAGE 1,5V 1,0V 25A 1 2 0,5V 0V 1V 2V V F, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage 0,0V 50 C 0 C 50 C 100 C, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Power Semiconductors 13 Rev. 2.2 Sep 08

14 Power Semiconductors 14 Rev. 2.2 Sep MIN MAX MIN MAX mm Z8B M M PGTO2473

15 i,v di F /dt t =t + t rr S F Q =Q + Q rr S F t rr I F t S t F Q S Q F 10% I rrm t I rrm di 90% I rrm rr /dt V R Figure C. Definition of diodes switching characteristics T(t) j τ 1 r1 τ 2 r2 τ r n n p(t) r r 1 2 n r Figure A. Definition of switching times T C Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L σ =180nH and Stray capacity C σ =39pF. Power Semiconductors 15 Rev. 2.2 Sep 08

16 Published by Infineon Technologies AG Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 16 Rev. 2.2 Sep 08