Electronic Circuits ELCT604 (Spring 2018) Lecture 2 BJT Amplifiers
|
|
- Isaac Rice
- 5 years ago
- Views:
Transcription
1 Electronic Circuits ELCT604 (Spring 2018) Lecture 2 BJT Amplifiers Assistant Professor Office: C eman.azab@guc.edu.eg 1
2 Analog Voltage Amplifiers Circuit Design and Configurations 2
3 Objective Implementing a voltage amplifier Circuit on the transistor level What are the Specifications for an Ideal Voltage Amp.? Infinite Input Resistance: R in Infinite Voltage Gain: A vo Finite Output Resistance (Short Circuit): R out A vo v v ' out in A v v v out sig R R A in L v A vo R sig R R R in out L 3
4 Signals in Amplifier Circuits Information signals that we want to amplify must be AC signal However, we will have three types of signals in the circuit. Thus; we need to distinguish between them by symbol: Type of Signal Signal Symbol Example DC Signals AC Signals (Small Signals) Instantaneous (Large Signals) Capital Letter and Subscript Small Letter and Subscript Small Letter and Capital Subscript V BE, V CE, I C v be,v ce, i c v BE, v CE, i C 4
5 BJT Modes of Operation Electrical Equations of BJT I-V characteristics 5
6 BJT NPN Modes of Operation Mode BEJ BCJ Equations Condition Cutoff Reverse Reverse I C = I E = I B =0 Active (Forward) Saturation Reverse Active Forward Q Forward Reverse Q Reverse Forward Forward V BE = 0.7 I E = I C + I B I C = β F I B = α F I E β F α F = 1 + β F V BE = 0.7 V BC = 0.5 V CE = 0.2 I E = I C + I B V BC = 0.5 I C = I E + I B I E = β R I B = α R I C β R α R = 1 + β R V BE < 0.7 V BC < 0.5 V BC < 0.5 Or V CE > 0.2 I C < β F I B V BE < 0.7 6
7 BJT Active mode I-V CKHs I C versus V CE The Early effect V BE ic ISexp( ) 1 VT v V CE A r o i v C CE V I A C Q Figure from Sedra/Smith, Copyright 2010 by Oxford University Press, Inc. 7
8 BJT Large Signal Model in Active Mode Q Figure from Sedra/Smith, Copyright 2010 by Oxford University Press, Inc. 8
9 BJT Large Signal Analysis Voltage Amplifier using BJT Assume that we have instantaneous input voltage signal v I The instantaneous output voltage v O is measured from collector referring to the ground Using KVLs: v I = v BE v O = v CE v O = V CC i C R C Figure from Sedra/Smith, Copyright 2010 by Oxford University Press, Inc. 9
10 BJT Large Signal Analysis Voltage Amplifier using BJT The transistor mode of operation depends on the value of v I Cutoff Mode 0 v I 0.5 i C = 0 Active Mode v O = V CC 0.5 v I v BE,sat v O > v CE,sat i C = I S exp v BE V T v O = V CC I S R C exp Saturation Mode v I V T v I v BE,sat v O =
11 BJT as an Amplifier We can easily separate DC and AC Signals (Superposition) Under the assumption that the AC signal amplitude is very small, such that the transistor s mode will remain the same for the complete cycle BJT must work in Active Mode to avoid signal distortion DC Sources are used to make sure BJT operates in Active mode Input terminals of the amplifier are Base/Emitter Output terminals of the amplifier are Collector/Emitter Equivalent Circuit for Small Signal Analysis can be derived v BE = V BE + v be i C = I S exp V BE + v be V T 11
12 BJT as an Amplifier Assume BJT is in active mode & v be <<V T i C = I S exp V BE + v be V T i C = I S exp V BE V T exp v be V T i C I C 1 + v be V T g m = i C v be = I C V T i C = g m v be = βi b Figure from Sedra/Smith, Copyright 2010 by Oxford University Press, Inc. 12
13 BJT Small Signal Model We can place a resistance between Base and Emitter to have a path for the base current i C = g m v be = βi b r π = v be i b = β g m = V T I B Figure from Sedra/Smith, Copyright 2010 by Oxford University Press, Inc. 13
14 BJT Small Signal Model Note that: Early effect can be taken into consideration r o = V A I C Figure from Sedra/Smith, Copyright 2010 by Oxford University Press, Inc. 14
15 Analysis of BJT Amplifiers Objective: Calculate the voltage gain, Input and Output Resistances 1. Determine the DC operating Point (Deactivate AC signals) 2. Calculate the small signal model parameters: g m, r π 3. Replace the BJT with its small signal model (DC sources are deactivated) 4. Analyze the circuit to calculate the voltage gain, Input and Output Resistances 15
16 BJT Amplifiers Configurations 16
17 Common Emitter Amplifier Objective: Calculate the voltage gain, Input and Output Resistances Input terminal Base Output Terminal Collector Figure from Sedra/Smith, Copyright 2010 by Oxford University Press, Inc. 17
18 Common Emitter Amplifier 1. Calculate the DC Current 2. Calculate g m and r π I C = β 1 + β I I 18
19 Common Emitter Amplifier 3. Draw the equivalent small signal model (Include r o if given) 19
20 Common Emitter Amplifier 3. Draw the equivalent small signal model (Include r o if given) 4. Calculate the gain, input and output Resistance Figure from Sedra/Smith, Copyright 2010 by Oxford University Press, Inc. A v = v O v sig = g m (r o R C R L ) R B r π R B r π + R sig R in = R B r π R out = r o R C R L 20
21 Common Emitter Amplifier Notes on Common Emitter Configuration: Inverting Amplifier Gain is greater than unity High Input Resistance High Output Resistance 21
22 Common Base Amplifier Objective: Calculate the voltage gain, Input and Output Resistances Input terminal Emitter Output Terminal Collector 22
23 Common Base Amplifier Voltage gain, input and Output Resistance (r o is neglected) A v = v O = g m(r C R L ) v sig R 1 + S (R E r π 1 + β ) R in = R S + (R E R out = R C R L r π 1 + β ) 23
24 Common Base Amplifier Notes on Common Base Configuration: Non-Inverting Amplifier Gain is greater than unity Low Input Resistance High Output Resistance 24
25 Common Collector Amplifier Objective: Calculate the voltage gain, Input and Output Resistances Input terminal Base Output Terminal Emitter Figure from Sedra/Smith, Copyright 2010 by Oxford University Press, Inc. 25
26 Common Collector Amplifier Voltage gain, input and Output Resistance A v = v O v sig = 1 + β (r o R L ) r π β (r o R L ) 1 + R sig R B + R sig 26
27 Common Collector Amplifier Voltage gain, input and Output Resistance R in = R B r π β r o R L R out = r o r π + R B R sig 1 + β 27
28 Common Collector Amplifier Notes on Common Collector Configuration: Non-Inverting Amplifier Gain is less than unity Emitter Follower (Buffer) High Input Resistance Low Output Resistance 28
29 Common Emitter with R E Exercise: Find the Voltage gain, input and Output Resistance Figure from Sedra/Smith, Copyright 2010 by Oxford University Press, Inc. 29
Electronic Circuits for Mechatronics ELCT 609 Lecture 5: BJT Voltage Amplifiers
Electronic Circuits for Mechatronics ELCT 609 Lecture 5: BJT Voltage Amplifiers Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 BJT Modes of Operation Electrical Equations of BJT 2 BJT
More informationCommunication Microelectronics (W17)
Communication Microelectronics (W17) Lecture 4: Bipolar Junction Transistor Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Bipolar Junction Transistor (BJT) Physical Structure and I-V
More informationECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model
Faculty of Engineering ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Agenda I & V Notations BJT Devices & Symbols BJT Large Signal Model 2 I, V Notations (1) It is critical to understand
More informationC H A P T E R 6 Bipolar Junction Transistors (BJTs)
C H A P T E R 6 Bipolar Junction Transistors (BJTs) Figure 6.1 A simplified structure of the npn transistor and pnp transistor. Table 6.1: BJT modes of Operation Mode EBJ CBJ Cutoff Reverse Reverse Active
More informationBipolar Junction Transistors (BJTs)
C H A P T E R 6 Bipolar Junction Transistors (BJTs) Figure 6.1 A simplified structure of the npn transistor and pnp transistor. Table 6.1: BJT modes of Operation Mode Cutoff Active Saturation EBJ Reverse
More informationF7 Transistor Amplifiers
Lars Ohlsson 2018-09-25 F7 Transistor Amplifiers Outline Transfer characteristics Small signal operation and models Basic configurations Common source (CS) CS/CE w/ source/ emitter degeneration resistance
More informationENEE 306: Electronics Analysis and Design Laboratory
ENEE 306: Electronics Analysis and Design Laboratory Neil Goldsman Department of Electrical and Computer Engineering University of Maryland College Park, MD 20742 Spring 2005 Instructor: Professor Neil
More informationESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source
ESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source Output from Collector Start with bias DC analysis make sure BJT is in FA, then calculate small signal parameters for AC analysis.
More informationTutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers
Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers 1. Explain the purpose of a thin, lightly doped base region.
More informationLast time: BJT CE and CB amplifiers biased by current source
Last time: BJT CE and CB amplifiers biased by current source Assume FA regime, then VB VC V E I B I E, β 1 I Q C α I, V 0. 7V Calculate V CE and confirm it is > 0.2-0.3V, then BJT can be replaced with
More informationThe shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect
Diode as Clamper A clamping circuit is used to place either the positive or negative peak of a signal at a desired level. The dc component is simply added or subtracted to/from the input signal. The clamper
More informationCHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN
CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN Hanoi, 9/24/2012 Contents 2 Structure and operation of BJT Different configurations of BJT Characteristic curves DC biasing method and analysis
More informationElectronic Circuits for Mechatronics ELCT 609 Lecture 7: MOS-FET Amplifiers
Electronic Circuits for Mechatronics ELCT 609 Lecture 7: MOS-FET Amplifiers Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Enhancement N-MOS Modes of Operation Mode V GS I DS V DS Cutoff
More informationCurrent Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.
Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect
More informationECE321 Electronics I Fall 2006
ECE321 Electronics I Fall 2006 Professor James E. Morris Lecture 11 31 st October, 2006 Bipolar Junction Transistors (BJTs) 5.1 Device Structure & Physics 5.2 I-V Characteristics Convert 5.1 information
More informationChapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering
MEMS1082 Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Bipolar Transistor Construction npn BJT Transistor Structure npn BJT I = I + E C I B V V BE CE = V = V B C V V E E Base-to-emitter
More informationBipolar Junction Transistors (BJTs) Overview
1 Bipolar Junction Transistors (BJTs) Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s Institute of Technology
More informationEE105 Fall 2015 Microelectronic Devices and Circuits
EE105 Fall 2015 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 11-1 Transistor Operating Mode in Amplifiers Transistors are biased in flat part of
More informationBJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1
BJT Bipolar Junction Transistor Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com The Bipolar Junction Transistor is a semiconductor device which
More informationUNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press
UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth
More informationBJT Circuits (MCQs of Moderate Complexity)
BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r
More informationTransistors and Applications
Chapter 17 Transistors and Applications DC Operation of Bipolar Junction Transistors (BJTs) The bipolar junction transistor (BJT) is constructed with three doped semiconductor regions separated by two
More informationFigure1: Basic BJT construction.
Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).
More informationEE105 Fall 2015 Microelectronic Devices and Circuits. Basic Single-Transistor Amplifier Configurations
EE05 Fall 205 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 5 Sutardja Dai Hall (SDH 2- MOSFET Basic Single-Transistor Amplifier Configurations BJT 2-2 Two-Port Model of Amplifiers
More informationBJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
More informationChapter 3: Bipolar Junction Transistors
Chapter 3: Bipolar Junction Transistors Transistor Construction There are two types of transistors: pnp npn pnp The terminals are labeled: E - Emitter B - Base C - Collector npn 2 Transistor Operation
More informationSome frequently used transistor parameter symbols and their meanings are given here.
When you have completed this exercise, you will be familiar with several transistor parameter symbols. You will verify your knowledge with a list of common transistor parameter symbols and meanings. Some
More informationV o2 = V c V d 2. V o1. Sensor circuit. Figure 1: Example of common-mode and difference-mode voltages. V i1 Sensor circuit V o
M.B. Patil, IIT Bombay 1 BJT Differential Amplifier Common-mode and difference-mode voltages A typical sensor circuit produces an output voltage between nodes A and B (see Fig. 1) such that V o1 = V c
More informationChapter 6. BJT Amplifiers
Basic Electronic Devices and Circuits EE 111 Electrical Engineering Majmaah University 2 nd Semester 1432/1433 H Chapter 6 BJT Amplifiers 1 Introduction The things you learned about biasing a transistor
More informationThe Bipolar Junction Transistor- Small Signal Characteristics
The Bipolar Junction Transistor- Small Signal Characteristics Debapratim Ghosh deba21pratim@gmail.com Electronic Systems Group Department of Electrical Engineering Indian Institute of Technology Bombay
More informationLinear electronic. Lecture No. 1
1 Lecture No. 1 2 3 4 5 Lecture No. 2 6 7 8 9 10 11 Lecture No. 3 12 13 14 Lecture No. 4 Example: find Frequency response analysis for the circuit shown in figure below. Where R S =4kR B1 =8kR B2 =4k R
More informationAnalog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.
Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the
More informationET215 Devices I Unit 4A
ITT Technical Institute ET215 Devices I Unit 4A Chapter 3, Section 3.1-3.2 This unit is divided into two parts; Unit 4A and Unit 4B Chapter 3 Section 3.1 Structure of Bipolar Junction Transistors The basic
More information4.1.3 Structure of Actual Transistors
4.1.3 Structure of Actual Transistors Figure 4.7 shows a more realistic BJT cross-section Collector virtually surrounds entire emitter region This makes it difficult for electrons injected into base to
More informationEEE225: Analogue and Digital Electronics
EEE225: Analogue and Digital Electronics Lecture I James E. Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk Introduction This Lecture 1 Introduction Aims &
More informationPhysics of Bipolar Transistor
Physics of Bipolar Transistor Motivations - In many electronic applications, amplifier is the most fundamental building block. Ex Audio amplifier: amplifies electric signal to drive a speaker RF Power
More informationEXP8: AMPLIFIERS II.
EXP8: AMPLIFIES II. Objectives. The objectives of this lab are:. To analyze the behavior of a class A amplifier. 2. To understand the role the components play in the gain of the circuit. 3. To find the
More informationExercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook)
Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook) Recapitulation and Equivalent Circuit Models Previous slides present first order BJT model. Assumes npn transistor in active mode. Basic relationship
More informationITT Technical Institute. ET215 Devices 1. Unit 6 Chapter 3, Sections
ITT Technical Institute ET215 Devices 1 Unit 6 Chapter 3, Sections 3.7-3.9 Chapter 3 Section 3.7 The Bipolar Transistor as a Switch Objectives: Explain how a transistor can be used as a switch 1. Compute
More informationSingle-Stage BJT Amplifiers and BJT High-Frequency Model. Single-Stage BJT Amplifier Configurations
1 Single-Stage BJT Amplifiers and BJT High-Frequency Model Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s
More informationEarly Effect & BJT Biasing
Early Effect & BJT Biasing Early Effect DC BJT Behavior DC Biasing the BJT 1 ESE319 Introduction to Microelectronics Early Effect Saturation region Forward-Active region 4 3 Ideal NPN BJT Transfer V Characteristic
More informationChapter 3. Bipolar Junction Transistors
Chapter 3. Bipolar Junction Transistors Outline: Fundamental of Transistor Common-Base Configuration Common-Emitter Configuration Common-Collector Configuration Introduction The transistor is a three-layer
More informationChapter 5 Transistor Bias Circuits
Chapter 5 Transistor Bias Circuits Objectives Discuss the concept of dc biasing of a transistor for linear operation Analyze voltage-divider bias, base bias, and collector-feedback bias circuits. Basic
More informationI C I E =I B = I C 1 V BE 0.7 V
Guide to NPN Amplifier Analysis Jason Woytowich 1. Transistor characteristics A BJT has three operating modes cutoff, active, and saturation. For applications, like amplifiers, where linear characteristics
More informationElectronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor
Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Introduction Why we call it Transistor? The name came as an
More informationLecture 12. Bipolar Junction Transistor (BJT) BJT 1-1
Lecture 12 Bipolar Junction Transistor (BJT) BJT 1-1 Course Info Lecture hours: 4 Two Lectures weekly (Saturdays and Wednesdays) Location: K2 Time: 1:40 pm Tutorial hours: 2 One tutorial class every week
More informationCOE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline
COE/EE152: Basic Electronics Lecture 5 Andrew Selasi Agbemenu 1 Outline Physical Structure of BJT Two Diode Analogy Modes of Operation Forward Active Mode of BJTs BJT Configurations Early Effect Large
More informationBipolar Junction Transistor (BJT) Basics- GATE Problems
Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BV CEO and that with emitter open is BV CBO, then (a) BV CEO =
More informationEE105 Fall 2014 Microelectronic Devices and Circuits. NPN Bipolar Junction Transistor (BJT)
EE105 Fall 2014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 utardja Dai Hall (DH) 1 NPN Bipolar Junction Transistor (BJT) Forward Bias Reverse Bias Hole Flow Electron
More informationLecture 3: Transistors
Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,
More information5.25Chapter V Problem Set
5.25Chapter V Problem Set P5.1 Analyze the circuits in Fig. P5.1 and determine the base, collector, and emitter currents of the BJTs as well as the voltages at the base, collector, and emitter terminals.
More informationSAMPLE FINAL EXAMINATION FALL TERM
ENGINEERING SCIENCES 154 ELECTRONIC DEVICES AND CIRCUITS SAMPLE FINAL EXAMINATION FALL TERM 2001-2002 NAME Some Possible Solutions a. Please answer all of the questions in the spaces provided. If you need
More informationGOVERNMENT OF KARNATAKA KARNATAKA STATE PRE-UNIVERSITY EDUCATION EXAMINATION BOARD II YEAR PUC EXAMINATION JULY-2012 SCHEME OF VALUATION
GOVERNMENT OF KARNATAKA KARNATAKA STATE PRE-UNIVERSITY EDUCATION EXAMINATION BOARD II YEAR PUC EXAMINATION JULY-0 SCHEME OF VALUATION Subject Code: 40 Subject: PART - A 0. Which region of the transistor
More informationLecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing
Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)
More informationDC Bias. Graphical Analysis. Script
Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 3 Lecture Title: Analog Circuits
More informationWeek 12: Output Stages, Frequency Response
ELE 2110A Electronic Circuits Week 12: Output Stages, Frequency esponse (2 hours only) Lecture 12-1 Output Stages Topics to cover Amplifier Frequency esponse eading Assignment: Chap 15.3, 16.1 of Jaeger
More informationLecture (06) Bipolar Junction Transistor
Lecture (06) Bipolar Junction Transistor By: Dr. Ahmed lshafee ١ Agenda BJT structure BJT operation BJT characteristics ٢ BJT structure The BJT is constructed with three doped semiconductor regions One
More informationBFF1303: ELECTRICAL / ELECTRONICS ENGINEERING. Analog Electronics: Bipolar Junction Transistors
BFF1303: ELECTRICAL / ELECTRONICS ENGINEERING Analog Electronics: Bipolar Junction Transistors Ismail Mohd Khairuddin, Zulkifil Md Yusof Faculty of Manufacturing Engineering Universiti Malaysia Pahang
More information(a) BJT-OPERATING MODES & CONFIGURATIONS
(a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base
More informationBipolar junction transistors.
Bipolar junction transistors. Third Semester Course code : 15EECC202 Analog electronic circuits (AEC) Team: Dr. Nalini C Iyer, R.V. Hangal, Sujata N, Prashant A, Sneha Meti AEC Team, Faculty, School of
More informationLecture #3 ( 2 weeks) Transistors
Spring 2015 Benha University Faculty of Engineering at Shoubra ECE-291 Electronic Engineering Lecture #3 ( 2 weeks) Transistors Instructor: Dr. Ahmad El-Banna 1 Agenda BJT Structure Basic Operation Transistor
More informationChapter 3 Bipolar Junction Transistors (BJT)
Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,
More informationEEE225: Analogue and Digital Electronics
EEE225: Analogue and Digital Electronics Lecture II James E. Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk This Lecture 1 One Transistor Circuits Continued...
More informationHOME ASSIGNMENT. Figure.Q3
HOME ASSIGNMENT 1. For the differential amplifier circuit shown below in figure.q1, let I=1 ma, V CC =5V, v CM = -2V, R C =3kΩ and β=100. Assume that the BJTs have v BE =0.7 V at i C =1 ma. Find the voltage
More informationChapter 6: Transistors and Gain
I. Introduction Chapter 6: Transistors and Gain This week we introduce the transistor. Transistors are three-terminal devices that can amplify a signal and increase the signal s power. The price is that
More informationMICROELECTRONICS ELCT 703 (W17) LECTURE 1: ANALOG MULTIPLIERS
MICROELECTRONICS ELCT 703 (W17) LECTURE 1: ANALOG MULTIPLIERS Dr. Eman Azab Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 COURSE OVERVIEW Lecturer Teaching Assistant Course Team Dr.
More informationMultistage Amplifiers
Multistage Amplifiers Single-stage transistor amplifiers are inadequate for meeting most design requirements for any of the four amplifier types (voltage, current, transconductance, and transresistance.)
More informationUNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences. Discussion Notes #9
UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences Discussion Notes #9 EE 05 Spring 2007 Prof. Wu BJT Amplifiers Recall from Chapter
More informationI1 19u 5V R11 1MEG IDC Q7 Q2N3904 Q2N3904. Figure 3.1 A scaled down 741 op amp used in this lab
Lab 3: 74 Op amp Purpose: The purpose of this laboratory is to become familiar with a two stage operational amplifier (op amp). Students will analyze the circuit manually and compare the results with SPICE.
More informationTransistor Biasing. DC Biasing of BJT. Transistor Biasing. Transistor Biasing 11/23/2018
Transistor Biasing DC Biasing of BJT Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com A transistors steady state of operation depends a great deal
More informationEEE118: Electronic Devices and Circuits
EEE118: Electronic Devices and Circuits Lecture XI James E Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk Review Review Introduced the idea of a dynamic resistance
More informationTransistor electronic technologies
Transistor electronic technologies Bipolar Junction Transistor discrete or integrated circuit discrete = individual component MOS (Metal-Oxide-Silicon) Field Effect Transistor mainly used in integrated
More informationLecture 030 ECE4430 Review III (1/9/04) Page 030-1
Lecture 030 ECE4430 Review III (1/9/04) Page 0301 LECTURE 030 ECE 4430 REVIEW III (READING: GHLM Chaps. 3 and 4) Objective The objective of this presentation is: 1.) Identify the prerequisite material
More informationBipolar Junction Transistor
ESE 211 / Spring 2011 / Lecture 10 Bipolar Junction Transistor Let us first consider general transconductance amplifier loaded with short circuit Transconductance Obviously, power supplies are needed for
More informationEBERS Moll Model. Presented by K.Pandiaraj Assistant Professor ECE Department Kalasalingam University
EBERS Moll Model Presented by K.Pandiaraj Assistant Professor ECE Department Kalasalingam University BJT Device Models The primary function of a model is to predict the behaviour of a device in particular
More informationLecture 19: Available Power. Distortion. Emitter Degeneration. Miller Effect.
Whites, EE 322 Lecture 19 Page 1 of 11 Lecture 19: Available Power. Distortion. Emitter Degeneration. Miller Effect. While the efficiency of an amplifier, as discussed in the previous lecture, is an important
More informationLab 3: BJT Digital Switch
Lab 3: BJT Digital Switch Objectives The purpose of this lab is to acquaint you with the basic operation of bipolar junction transistor (BJT) and to demonstrate its functionality in digital switching circuits.
More informationElectronic Circuits EE359A
Electronic Circuits EE359A Bruce McNair B206 bmcnair@stevens.edu 201-216-5549 Lecture 4 0 Bipolar Junction Transistors (BJT) Small Signal Analysis Graphical Analysis / Biasing Amplifier, Switch and Logic
More informationElectronics EECE2412 Spring 2017 Exam #2
Electronics EECE2412 Spring 2017 Exam #2 Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University 30 March 2017 File:12198/exams/exam2 Name: : General Rules:
More informationREVIEW TRANSISTOR BIAS CIRCUIT
EVIEW TANSISTO BIAS CICUIT OBJECTIVES Discuss the concept of dc biasing of a transistor for linear operation Analyze voltage-divider bias, base bias, and collectorfeedback bias circuits. Basic troubleshooting
More informationLecture (01) Transistor operating point & DC Load line
Lecture (01) Transistor operating point & DC Load line By: Dr. Ahmed ElShafee ١ BJT Characteristic Collector Characteristic Curves B C E ٢ BJT modes of operation Conditions in Cutoff Conditions in Saturation
More informationBy: Dr. Ahmed ElShafee
Lecture (04) Transistor Bias Circuit 3 BJT Amplifiers 1 By: Dr. Ahmed ElShafee ١ Emitter Feedback Bias If an emitter resistor is added to the base bias circuit in Figure, the result is emitter feedback
More informationESE 319 MT Review
ESE 319 MT1 2010 Review 1)--> Physical operation of a BJT (layout, why currents are related, npn vs. pnp). 2)Cover the Eber's Mole Model for forward and reverse active configurations. (large signal model)
More informationImproving Amplifier Voltage Gain
15.1 Multistage ac-coupled Amplifiers 1077 TABLE 15.3 Three-Stage Amplifier Summary HAND ANALYSIS SPICE RESULTS Voltage gain 998 1010 Input signal range 92.7 V Input resistance 1 M 1M Output resistance
More informationElectronic Devices. Floyd. Chapter 6. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd
Electronic Devices Ninth Edition Floyd Chapter 6 Agenda BJT AC Analysis Linear Amplifier AC Load Line Transistor AC Model Common Emitter Amplifier Common Collector Amplifier Common Base Amplifier Special
More informationoutput passes full first (positive) hump and 1/2-scale second hump
3. For V i > 0, V o 0. For V i < 0, V o V i. The resulting waveform consists only of the negative "humps" of the original cosine wave. Each hump has a duration of 0.5s there is a 0.5s gap between each
More informationEE 330 Lecture 21. Bipolar Process Flow
EE 330 Lecture 21 Bipolar Process Flow Exam 2 Friday March 9 Exam 3 Friday April 13 Review from Last Lecture Simplified Multi-Region Model I C βi B JSA IB β V 1 V E e V CE BE V t AF V BE >0.4V V BC
More informationCommon-Emitter Amplifier
Dr. Charles Kim Common-Emitter Amplifier A. Before We Start As the title of this lab says, this lab is about designing a Common-Emitter Amplifier, and this in this stage of the lab course is premature,
More informationWhen you have completed this exercise, you will be able to determine ac operating characteristics of a
When you have completed this exercise, you will be able to determine ac operating characteristics of a multimeter and an oscilloscope. A sine wave generator connected between the transistor base and ground
More informationECE 255, MOSFET Basic Configurations
ECE 255, MOSFET Basic Configurations 8 March 2018 In this lecture, we will go back to Section 7.3, and the basic configurations of MOSFET amplifiers will be studied similar to that of BJT. Previously,
More informationMicroelectronics Circuit Analysis and Design
Neamen Microelectronics Chapter 6-1 Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 6 Basic BJT Amplifiers Neamen Microelectronics Chapter 6-2 In this chapter, we will: Understand
More informationPHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS
PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS Due Date (NOTE CHANGE): Thursday, Nov 12 th @ 5 pm; Late penalty in effect! Most active electronic devices are based on the transistor as the fundamental
More informationTransistor Configuration
Transistor Configuration 1 Objectives To review BJT biasing circuit. To study BJT amplifier circuit To understand the BJT configuration. To analyse single-stage BJT amplifier circuits. To study the differential
More informationWhen you have completed this exercise, you will be able to determine the ac operating characteristics of
When you have completed this exercise, you will be able to determine the ac operating characteristics of multimeter and an oscilloscope. A sine wave generator connected between the transistor and ground
More information(b) 25% (b) increases
Homework Assignment 07 Question 1 (2 points each unless noted otherwise) 1. In the circuit 10 V, 10, and 5K. What current flows through? Answer: By op-amp action the voltage across is and the current through
More informationTransistor Configuration
Transistor Configuration 1 Objectives To review BJT biasing circuit. To study BJT amplifier circuit To understand the BJT configuration. To analyse single-stage BJT amplifier circuits. To study the differential
More informationELEC 2210 EXPERIMENT 7 The Bipolar Junction Transistor (BJT)
ELEC 2210 EXPERIMENT 7 The Bipolar Junction Transistor (BJT) Objectives: The experiments in this laboratory exercise will provide an introduction to the BJT. You will use the Bit Bucket breadboarding system
More informationLecture #7 BJT and JFET Frequency Response
November 2014 Integrated Technical Education Cluster At AlAmeeria J-601-1448 Electronic Principals Lecture #7 BJT and JFET Frequency Response Instructor: Dr. Ahmad El-Banna Agenda Introduction General
More informationAlexandria University Faculty of Engineering Electrical Engineering Department
Chapter 10: Alexandria University Faculty of Engineering Electrical Engineering Department ECE 336: Semiconductor Devices Sheet 6 1. A Si pnp BJT with N AE = 5x10 17 / cm 3, N DB = 10 15 /cm 3 and N AC
More informationEE 330 Lecture 20. Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling
EE 330 Lecture 20 Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling Review from Last Lecture Simplified Multi-Region Model Alternate equivalent model
More information