BFF1303: ELECTRICAL / ELECTRONICS ENGINEERING. Analog Electronics: Bipolar Junction Transistors

Size: px
Start display at page:

Download "BFF1303: ELECTRICAL / ELECTRONICS ENGINEERING. Analog Electronics: Bipolar Junction Transistors"

Transcription

1 BFF1303: ELECTRICAL / ELECTRONICS ENGINEERING Analog Electronics: Bipolar Junction Transistors Ismail Mohd Khairuddin, Zulkifil Md Yusof Faculty of Manufacturing Engineering Universiti Malaysia Pahang

2 Bipolar Junction Transistor BFF1303 ELECTRICAL/ELECTRONICS ENGINEERING Faculty of Manufacturing Universiti Malaysia Pahang Kampus Pekan, Pahang Darul Makmur Tel: Fax: Contents: Outcomes Introduction Transistor Construction Transistor Operation Common-Base Configuration Common-Emitter Configuration Common-Collector Configuration Limits Of Operation Transistor Specification Sheet BFF1303 Electrical/Electronic Engineering 2 2

3 Understand the physical operation of bipolar transistor Select the operating point of a bipolar transistor circuit Compute performance of several important amplifier configurations. Select an amplifier configuration appropriate for a given application. BFF1303 Electrical/Electronic Engineering 3 3

4 Bardeen, Brattain and Shockley Discovery of the transistor in 1947 BFF1303 Electrical/Electronic Engineering 4 4

5 There are two types of transistors: pnp npn pnp The terminals are labeled: E - Emitter B - Base C - Collector npn BFF1303 Electrical/Electronic Engineering 5 5

6 With the external sources, V EE and V CC, connected as shown: The emitter-base junction is forward biased The base-collector junction is reverse biased BFF1303 Electrical/Electronic Engineering 6 6

7 Currents in a Transistor Emitter current is the sum of the collector and base currents: I I I E C B The collector current is comprised of two currents: I I I C C CO majority minority BFF1303 Electrical/Electronic Engineering 7 7

8 The base is common to both input (emitter base) and output (collector base) of the transistor. BFF1303 Electrical/Electronic Engineering 8 8

9 Common-Base Amplifier Input Characteristics This curve shows the relationship between of input current (I E ) to input voltage (V BE ) for three output voltage (V CB ) levels. BFF1303 Electrical/Electronic Engineering 9 9

10 Common-Base Amplifier Output Characteristics This graph demonstrates the output current (I C ) to an output voltage (V CB ) for various levels of input current (I E ). BFF1303 Electrical/Electronic Engineering

11 Operating Regions Active Operating range of the amplifier. Cutoff The amplifier is basically off. There is voltage, but little current. Saturation The amplifier is full on. There is current, but little voltage. Approximations Emitter and collector currents: Base-emitter voltage: VBE I C I E 0.7 V (for Silicon) BFF1303 Electrical/Electronic Engineering

12 Alpha (α) Ratio of I C to I E : Ideally: α = 1 α dc I I C E In reality: a is between 0.9 and Alpha () in the AC mode: α ac ΔI ΔI C E BFF1303 Electrical/Electronic Engineering

13 The emitter is common to both input (base-emitter) and output (collectoremitter). The input is on the base and the output is on the collector. BFF1303 Electrical/Electronic Engineering

14 Common-Emitter Characteristics Collector Characteristics Base Characteristics BFF1303 Electrical/Electronic Engineering

15 Common-Emitter Amplifier Currents Ideal Currents I E = I C + I B I C = I E Actual Currents I C = I E + I CBO where I CBO = minority collector current I CBO is usually so small that it can be ignored, except in high power transistors and in high temperature environments. When I B = 0 A the transistor is in cutoff, but there is some minority current flowing called I CEO. I CE ICBO 0 1 α IB0 μa BFF1303 Electrical/Electronic Engineering

16 Beta (β) represents the amplification factor of a transistor. ( is sometimes referred to as h fe, a term used in transistor modeling calculations) In DC mode: In AC mode: β dc I I C B ac I I C B V CE constant BFF1303 Electrical/Electronic Engineering

17 Beta (β) Determining from a Graph AC (3.2 ma 2.2 ma) (30 μa 20 μa) 1mA 10 μa 100 V CE 7.5 DC 2.7 ma 25 μa 108 V CE 7.5 BFF1303 Electrical/Electronic Engineering

18 Beta (β) Relationship between amplification factors and 1 1 Relationship Between Currents I C I I ( 1) I B E B BFF1303 Electrical/Electronic Engineering

19 The input is on the base and the output is on the emitter. BFF1303 Electrical/Electronic Engineering

20 The input is on the base and the output is on the emitter. BFF1303 Electrical/Electronic Engineering

21 The characteristics are similar to those of the common-emitter configuration, except the vertical axis is I E. BFF1303 Electrical/Electronic Engineering

22 V CE is at maximum and I C is at minimum (I Cmax = I CEO ) in the cutoff region. I C is at maximum and V CE is at minimum (V CE max = V CEsat = V CEO ) in the saturation region. The transistor operates in the active region between saturation and cutoff. BFF1303 Electrical/Electronic Engineering

23 Power Dissipation Common-base: P V I C max CB C Common-emitter: P V I C max CE C Common-collector: P V I C max CE E BFF1303 Electrical/Electronic Engineering

24 BFF1303 Electrical/Electronic Engineering

25 BFF1303 Electrical/Electronic Engineering

26 BFF1303 Electrical/Electronic Engineering

Chapter 3: Bipolar Junction Transistors

Chapter 3: Bipolar Junction Transistors Chapter 3: Bipolar Junction Transistors Transistor Construction There are two types of transistors: pnp npn pnp The terminals are labeled: E - Emitter B - Base C - Collector npn 2 Transistor Operation

More information

Chapter 3 Bipolar Junction Transistors (BJT)

Chapter 3 Bipolar Junction Transistors (BJT) Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,

More information

ECE321 Electronics I Fall 2006

ECE321 Electronics I Fall 2006 ECE321 Electronics I Fall 2006 Professor James E. Morris Lecture 11 31 st October, 2006 Bipolar Junction Transistors (BJTs) 5.1 Device Structure & Physics 5.2 I-V Characteristics Convert 5.1 information

More information

Chapter 3. Bipolar Junction Transistors

Chapter 3. Bipolar Junction Transistors Chapter 3. Bipolar Junction Transistors Outline: Fundamental of Transistor Common-Base Configuration Common-Emitter Configuration Common-Collector Configuration Introduction The transistor is a three-layer

More information

BFF1303: ELECTRICAL / ELECTRONICS ENGINEERING. Analog Electronics: Rectifier

BFF1303: ELECTRICAL / ELECTRONICS ENGINEERING. Analog Electronics: Rectifier BFF1303: EECTCA / EECTONCS ENGNEENG Analog Electronics: ectifier smail Mohd Khairuddin, ulkifil Md Yusof Faculty of Manufacturing Engineering Universiti Malaysia Pahang Semiconductor Diodes & Circuits

More information

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS Most of the content is from the textbook: Electronic devices and circuit theory,

More information

ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model

ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Faculty of Engineering ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Agenda I & V Notations BJT Devices & Symbols BJT Large Signal Model 2 I, V Notations (1) It is critical to understand

More information

Lecture 12. Bipolar Junction Transistor (BJT) BJT 1-1

Lecture 12. Bipolar Junction Transistor (BJT) BJT 1-1 Lecture 12 Bipolar Junction Transistor (BJT) BJT 1-1 Course Info Lecture hours: 4 Two Lectures weekly (Saturdays and Wednesdays) Location: K2 Time: 1:40 pm Tutorial hours: 2 One tutorial class every week

More information

EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT

EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT 1. OBJECTIVES 1.1 To practice how to test NPN and PNP transistors using multimeter. 1.2 To demonstrate the relationship between collector current

More information

Chapter Two "Bipolar Transistor Circuits"

Chapter Two Bipolar Transistor Circuits Chapter Two "Bipolar Transistor Circuits" 1.TRANSISTOR CONSTRUCTION:- The transistor is a three-layer semiconductor device consisting of either two n- and one p-type layers of material or two p- and one

More information

7. Bipolar Junction Transistor

7. Bipolar Junction Transistor 41 7. Bipolar Junction Transistor 7.1. Objectives - To experimentally examine the principles of operation of bipolar junction transistor (BJT); - To measure basic characteristics of n-p-n silicon transistor

More information

Transistors CHAPTER 3.1 INTRODUCTION

Transistors CHAPTER 3.1 INTRODUCTION CHAPTER 3 Bipolar Junction Transistors 3. INTRODUCTION During the period 904 947, the vacuum tube was undoubtedly the electronic device of interest and development. In 904, the vacuum-tube diode was introduced

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 2 Bipolar Junction Transistors Lecture-1 Transistor

More information

The first transistor. (Courtesy Bell Telephone Laboratories.)

The first transistor. (Courtesy Bell Telephone Laboratories.) Fig. 3.1 The first transistor. (Courtesy Bell Telephone Laboratories.) Fig. 3.2 Types of transistors: (a) pnp; (b) npn. : (a) pnp; : (b) npn Fig. 3.3 Forward-biased junction of a pnp transistor. Fig. 3.4

More information

Figure1: Basic BJT construction.

Figure1: Basic BJT construction. Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).

More information

Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers

Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers 1. Explain the purpose of a thin, lightly doped base region.

More information

(a) BJT-OPERATING MODES & CONFIGURATIONS

(a) BJT-OPERATING MODES & CONFIGURATIONS (a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base

More information

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)

More information

Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering

Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering MEMS1082 Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Bipolar Transistor Construction npn BJT Transistor Structure npn BJT I = I + E C I B V V BE CE = V = V B C V V E E Base-to-emitter

More information

Transistors and Applications

Transistors and Applications Chapter 17 Transistors and Applications DC Operation of Bipolar Junction Transistors (BJTs) The bipolar junction transistor (BJT) is constructed with three doped semiconductor regions separated by two

More information

COE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline

COE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline COE/EE152: Basic Electronics Lecture 5 Andrew Selasi Agbemenu 1 Outline Physical Structure of BJT Two Diode Analogy Modes of Operation Forward Active Mode of BJTs BJT Configurations Early Effect Large

More information

Bipolar Junction Transistor (BJT)

Bipolar Junction Transistor (BJT) Bipolar Junction Transistor (BJT) 1 Objectives To understand the structure of BJT. To explain and analyze the basic transistor circuits. To use transistors as an amplifier and electronic switch. To design

More information

Electronics EECE2412 Spring 2017 Exam #2

Electronics EECE2412 Spring 2017 Exam #2 Electronics EECE2412 Spring 2017 Exam #2 Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University 30 March 2017 File:12198/exams/exam2 Name: : General Rules:

More information

Module 2. B.Sc. I Electronics. Developed by: Mrs. Neha S. Joshi Asst. Professor Department of Electronics Willingdon College, Sangli

Module 2. B.Sc. I Electronics. Developed by: Mrs. Neha S. Joshi Asst. Professor Department of Electronics Willingdon College, Sangli Module 2 B.Sc. I Electronics Developed by: Mrs. Neha S. Joshi Asst. Professor Department of Electronics Willingdon College, Sangli BIPOLAR JUNCTION TRANSISTOR SCOPE OF THE CHAPTER- This chapter introduces

More information

CHAPTER 3 THE BIPOLAR JUNCTION TRANSISTOR (BJT)

CHAPTER 3 THE BIPOLAR JUNCTION TRANSISTOR (BJT) HAPT 3 TH IPOLA JUNTION TANSISTO (JT) 1 In this chapter, we will: JT Discuss the physical structure and operation of the bipolar junction transistor. Understand the dc analysis of bipolar transistor circuits.

More information

Bipolar Junction Transistors (BJTs)

Bipolar Junction Transistors (BJTs) C H A P T E R 6 Bipolar Junction Transistors (BJTs) Figure 6.1 A simplified structure of the npn transistor and pnp transistor. Table 6.1: BJT modes of Operation Mode Cutoff Active Saturation EBJ Reverse

More information

EE105 Fall 2014 Microelectronic Devices and Circuits. NPN Bipolar Junction Transistor (BJT)

EE105 Fall 2014 Microelectronic Devices and Circuits. NPN Bipolar Junction Transistor (BJT) EE105 Fall 2014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 utardja Dai Hall (DH) 1 NPN Bipolar Junction Transistor (BJT) Forward Bias Reverse Bias Hole Flow Electron

More information

Concepts to be Covered

Concepts to be Covered Introductory Medical Device Prototyping Analog Circuits Part 2 Semiconductors, http://saliterman.umn.edu/ Department of Biomedical Engineering, University of Minnesota Concepts to be Covered Semiconductors

More information

ELECTRONICS LAB. PART 3

ELECTRONICS LAB. PART 3 ELECTRONICS LAB. PART 3 Yrd. Doç. Dr. Taha İMECİ Arş. Gör. Ezgi YAMAÇ Arş. Gör. Ufuk ŞANVER İSTANBUL COMMERCE UNIVERSITY Contents TRANSISTORS... 2 5.1 INTRODUCTION... 2 5.2 OPERATION OF TRANSISTORS...

More information

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) 4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.

More information

STATIC CHARACTERISTICS OF TRANSISTOR

STATIC CHARACTERISTICS OF TRANSISTOR STAT CHARACTERISTS OF TRANSISTOR OBJECTIVE The purpose of the experiment is to study the characteristics of bipolar transistor in common emitter (CE) configuration. From the characteristic curve it is

More information

EXPERIMENT 6 REPORT Bipolar Junction Transistor (BJT) Characteristics

EXPERIMENT 6 REPORT Bipolar Junction Transistor (BJT) Characteristics Name & Surname: ID: Date: EXPERIMENT 6 REPORT Bipolar Junction Transistor (BJT) Characteristics Objectives: 1. To determine transistor type (npn, pnp),terminals, and material using a DMM 2. To graph the

More information

ELEC 2210 EXPERIMENT 7 The Bipolar Junction Transistor (BJT)

ELEC 2210 EXPERIMENT 7 The Bipolar Junction Transistor (BJT) ELEC 2210 EXPERIMENT 7 The Bipolar Junction Transistor (BJT) Objectives: The experiments in this laboratory exercise will provide an introduction to the BJT. You will use the Bit Bucket breadboarding system

More information

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved. Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the

More information

BIPOLAR JUNCTION TRANSISTORS (BJTs) Dr Derek Molloy, DCU

BIPOLAR JUNCTION TRANSISTORS (BJTs) Dr Derek Molloy, DCU IPOLAR JUNCTION TRANSISTORS (JTs) Dr Derek Molloy, DCU What are JTs? Two PN junctions joined together is a JT Simply known as a transistor! ipolar? Current carried by electrons and holes Will see FETs

More information

Some frequently used transistor parameter symbols and their meanings are given here.

Some frequently used transistor parameter symbols and their meanings are given here. When you have completed this exercise, you will be familiar with several transistor parameter symbols. You will verify your knowledge with a list of common transistor parameter symbols and meanings. Some

More information

C H A P T E R 6 Bipolar Junction Transistors (BJTs)

C H A P T E R 6 Bipolar Junction Transistors (BJTs) C H A P T E R 6 Bipolar Junction Transistors (BJTs) Figure 6.1 A simplified structure of the npn transistor and pnp transistor. Table 6.1: BJT modes of Operation Mode EBJ CBJ Cutoff Reverse Reverse Active

More information

Chapter 5 Transistor Bias Circuits

Chapter 5 Transistor Bias Circuits Chapter 5 Transistor Bias Circuits Objectives Discuss the concept of dc biasing of a transistor for linear operation Analyze voltage-divider bias, base bias, and collector-feedback bias circuits. Basic

More information

Transistor fundamentals Nafees Ahamad

Transistor fundamentals Nafees Ahamad Transistor fundamentals Nafees Ahamad Asstt. Prof., EECE Deptt, DIT University, Dehradun Website: www.eedofdit.weebly.com Transistor A transistor consists of two PN junctions formed by sandwiching either

More information

Physics of Bipolar Transistor

Physics of Bipolar Transistor Physics of Bipolar Transistor Motivations - In many electronic applications, amplifier is the most fundamental building block. Ex Audio amplifier: amplifies electric signal to drive a speaker RF Power

More information

CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN

CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN Hanoi, 9/24/2012 Contents 2 Structure and operation of BJT Different configurations of BJT Characteristic curves DC biasing method and analysis

More information

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Lecture outline Historical introduction Semiconductor devices overview Bipolar Junction Transistor (BJT) Field

More information

ECEN 325 Lab 7: Characterization and DC Biasing of the BJT

ECEN 325 Lab 7: Characterization and DC Biasing of the BJT ECEN 325 Lab 7: Characterization and DC Biasing of the BJT 1 Objectives The purpose of this lab is to characterize NPN and PNP bipolar junction transistors (BJT), and to analyze and design DC biasing circuits

More information

Bipolar Junction Transistors (BJTs) Overview

Bipolar Junction Transistors (BJTs) Overview 1 Bipolar Junction Transistors (BJTs) Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s Institute of Technology

More information

4.1.3 Structure of Actual Transistors

4.1.3 Structure of Actual Transistors 4.1.3 Structure of Actual Transistors Figure 4.7 shows a more realistic BJT cross-section Collector virtually surrounds entire emitter region This makes it difficult for electrons injected into base to

More information

Electronic Circuits - Tutorial 07 BJT transistor 1

Electronic Circuits - Tutorial 07 BJT transistor 1 Electronic Circuits - Tutorial 07 BJT transistor 1-1 / 20 - T & F # Question 1 A bipolar junction transistor has three terminals. T 2 For operation in the linear or active region, the base-emitter junction

More information

Communication Microelectronics (W17)

Communication Microelectronics (W17) Communication Microelectronics (W17) Lecture 4: Bipolar Junction Transistor Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Bipolar Junction Transistor (BJT) Physical Structure and I-V

More information

Bipolar Junction Transistors

Bipolar Junction Transistors Bipolar Junction Transistors Invented in 1948 at Bell Telephone laboratories Bipolar junction transistor (BJT) - one of the major three terminal devices Three terminal devices more useful than two terminal

More information

BJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1

BJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1 BJT Bipolar Junction Transistor Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com The Bipolar Junction Transistor is a semiconductor device which

More information

Bipolar Junction Transistor (BJT) Basics- GATE Problems

Bipolar Junction Transistor (BJT) Basics- GATE Problems Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BV CEO and that with emitter open is BV CBO, then (a) BV CEO =

More information

PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS

PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS PHY405F 2009 EXPERIMENT 6 SIMPLE TRANSISTOR CIRCUITS Due Date (NOTE CHANGE): Thursday, Nov 12 th @ 5 pm; Late penalty in effect! Most active electronic devices are based on the transistor as the fundamental

More information

General Purpose Transistors

General Purpose Transistors General Purpose Transistors PNP Silicon FEATURE Collector current capability I C = -5 ma. LBC87-6LTG LBC87-25LTG LBC87-4LTG Collector-emitter voltage V CEO (max) = -45 V. General purpose switching and

More information

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Preferred Devices NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias

More information

DATA SHEET. 2N5415; 2N5416 PNP high-voltage transistors DISCRETE SEMICONDUCTORS May 21

DATA SHEET. 2N5415; 2N5416 PNP high-voltage transistors DISCRETE SEMICONDUCTORS May 21 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21 FEATURES Low current (max. 200 ma) High voltage (max. 300

More information

Lecture (06) Bipolar Junction Transistor

Lecture (06) Bipolar Junction Transistor Lecture (06) Bipolar Junction Transistor By: Dr. Ahmed lshafee ١ Agenda BJT structure BJT operation BJT characteristics ٢ BJT structure The BJT is constructed with three doped semiconductor regions One

More information

2N4401 & 2N4403 General Purpose Switching Transistors

2N4401 & 2N4403 General Purpose Switching Transistors Features: NPN/PNP Silicon Planar Epitaxial Transistors. General purpose Switching Applications. 2N 4401 Type NPN. 2N 4403 Type PNP. 2N4401 NPN TO92 2N4403 PNP Dimensions Minimum Maximum A 4.32 5.33 B 4.45

More information

Transistor Characteristics

Transistor Characteristics Transistor Characteristics Topics covered in this presentation: Transistor Construction Transistor Operation Transistor Characteristics 1 of 15 The Transistor The transistor is a semiconductor device that

More information

Transistor Biasing. DC Biasing of BJT. Transistor Biasing. Transistor Biasing 11/23/2018

Transistor Biasing. DC Biasing of BJT. Transistor Biasing. Transistor Biasing 11/23/2018 Transistor Biasing DC Biasing of BJT Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com A transistors steady state of operation depends a great deal

More information

The Common Emitter Amplifier Circuit

The Common Emitter Amplifier Circuit The Common Emitter Amplifier Circuit In the Bipolar Transistor tutorial, we saw that the most common circuit configuration for an NPN transistor is that of the Common Emitter Amplifier circuit and that

More information

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector

More information

ชาว ศวกรรมคอมพ วเตอร คณะว ศวกรรมศาสตร มหาว ทยาล ยเทคโนโลย ราชมงคลพระนคร

ชาว ศวกรรมคอมพ วเตอร คณะว ศวกรรมศาสตร มหาว ทยาล ยเทคโนโลย ราชมงคลพระนคร EN2042102 วงจรไฟฟ าและอ เล กทรอน กส Circuits and Electronics บทท 7 ทรานซ สเตอร Bipolar Junction Transistor สาขาว ชาว ศวกรรมคอมพ วเตอร คณะว ศวกรรมศาสตร มหาว ทยาล ยเทคโนโลย ราชมงคลพระนคร Objectives Describe

More information

TIP120, 121, 122, 125, 126, 127

TIP120, 121, 122, 125, 126, 127 Features: Collector - emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126 100 V (minimum) - TIP122, TIP127 Collector - emitter saturation voltage

More information

ET215 Devices I Unit 4A

ET215 Devices I Unit 4A ITT Technical Institute ET215 Devices I Unit 4A Chapter 3, Section 3.1-3.2 This unit is divided into two parts; Unit 4A and Unit 4B Chapter 3 Section 3.1 Structure of Bipolar Junction Transistors The basic

More information

MJ21195 PNP MJ21196 NPN

MJ21195 PNP MJ21196 NPN MJ21195 PNP MJ21196 NPN Preferred Devices Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.

Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect

More information

DC Bias. Graphical Analysis. Script

DC Bias. Graphical Analysis. Script Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 3 Lecture Title: Analog Circuits

More information

Analog Circuits Part 2 Semiconductors

Analog Circuits Part 2 Semiconductors Introductory Medical Device Prototyping Analog Circuits Part 2 Semiconductors, http://saliterman.umn.edu/ Department of Biomedical Engineering, University of Minnesota Concepts to be Covered Semiconductors

More information

Darlington Transistors

Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126

More information

MJ15003, MJ A Complementary Power Transistors

MJ15003, MJ A Complementary Power Transistors The MJ15003 and MJ15004 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators and other linear applications. Features: High Power

More information

BDW93C, BDW94C Series

BDW93C, BDW94C Series Features Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage- CEO (sus) = (Minimum) Collector-emitter saturation voltage- CE (sat) = 2 (Maximum)

More information

BJT Circuits (MCQs of Moderate Complexity)

BJT Circuits (MCQs of Moderate Complexity) BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r

More information

Darlington Transistors

Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications Collector-Emitter sustaining voltage V CEO (sus) = 60 V (Minimum) - TIP45 = 80 V (Minimum) - TIP4, TIP46 = 00 V (Minimum)

More information

LM3046 Transistor Array

LM3046 Transistor Array LM3046 Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form

More information

EEE118: Electronic Devices and Circuits

EEE118: Electronic Devices and Circuits EEE118: Electronic Devices and Circuits Lecture XI James E Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk Review Review Introduced the idea of a dynamic resistance

More information

LM3046 Transistor Array

LM3046 Transistor Array Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected

More information

Structure of Actual Transistors

Structure of Actual Transistors 4.1.3. Structure of Actual Transistors Figure 4.7 shows a more realistic BJT cross-section Collector virtually surrounds entire emitter region This makes it difficult for electrons injected into base to

More information

Chapter 3: TRANSISTORS. Dr. Gopika Sood PG Govt. College For Girls Sector -11, Chandigarh

Chapter 3: TRANSISTORS. Dr. Gopika Sood PG Govt. College For Girls Sector -11, Chandigarh Chapter 3: TRANSISTORS Dr. Gopika Sood PG Govt. College For Girls Sector -11, Chandigarh OUTLINE Transistors Bipolar Junction Transistor (BJT) Operation of Transistor Transistor parameters Load Line Biasing

More information

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive

More information

An Introduction to Bipolar Junction Transistors. Prepared by Dr Yonas M Gebremichael, 2005

An Introduction to Bipolar Junction Transistors. Prepared by Dr Yonas M Gebremichael, 2005 An Introduction to Bipolar Junction Transistors Transistors Transistors are three port devices used in most integrated circuits such as amplifiers. Non amplifying components we have seen so far, such as

More information

Chapter 6: Transistors and Gain

Chapter 6: Transistors and Gain I. Introduction Chapter 6: Transistors and Gain This week we introduce the transistor. Transistors are three-terminal devices that can amplify a signal and increase the signal s power. The price is that

More information

Bipolar junction transistors.

Bipolar junction transistors. Bipolar junction transistors. Third Semester Course code : 15EECC202 Analog electronic circuits (AEC) Team: Dr. Nalini C Iyer, R.V. Hangal, Sujata N, Prashant A, Sneha Meti AEC Team, Faculty, School of

More information

Introduction PNP C NPN C

Introduction PNP C NPN C Introduction JT Transistors: A JT (or any transistor) can be used either as a switch with positions of on or off, or an amplifier that controls its output at all levels in between the extreme on or off

More information

Başkent University Department of Electrical and Electronics Engineering EEM 214 Electronics I Experiment 8. Bipolar Junction Transistor

Başkent University Department of Electrical and Electronics Engineering EEM 214 Electronics I Experiment 8. Bipolar Junction Transistor Başkent University Department of Electrical and Electronics Engineering EEM 214 Electronics I Experiment 8 Bipolar Junction Transistor Aim: The aim of this experiment is to investigate the DC behavior

More information

Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook)

Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook) Exercises 6.1, 6.2, 6.3 (page 315 on 7 th edition textbook) Recapitulation and Equivalent Circuit Models Previous slides present first order BJT model. Assumes npn transistor in active mode. Basic relationship

More information

Electronics II Lecture 2(a): Bipolar Junction Transistors

Electronics II Lecture 2(a): Bipolar Junction Transistors Lecture 2(a): Bipolar Junction Transistors A/Lectr. Khalid Shakir Dept. Of Engineering Engineering by Pearson Transistor! Transistor=Transfer+Resistor. When Transistor operates in active region its input

More information

2N2222A High Speed Switching Transistor

2N2222A High Speed Switching Transistor High Speed Switching Transistor Features: NPN Silicon Planar Switching Transistor. Fast switching devices exhibiting short turnoff and low saturation voltage characteristics. Switching and Linear application

More information

Chapter 4 DC Biasing BJTs. BJTs

Chapter 4 DC Biasing BJTs. BJTs hapter 4 D Biasing BJTs BJTs Biasing Biasing: The D voltages applied to a transistor in order to turn it on so that it can amplify the A signal. Operating Point The D input establishes an operating or

More information

BJT Characteristics & Common Emitter Transistor Amplifier

BJT Characteristics & Common Emitter Transistor Amplifier LAB #07 Objectives 1. To graph the collector characteristics of a transistor. 2. To measure AC and DC voltages in a common-emitter amplifier. Theory BJT A bipolar (junction) transistor (BJT) is a three-terminal

More information

MMBT2222A SMALL SIGNAL NPN TRANSISTOR

MMBT2222A SMALL SIGNAL NPN TRANSISTOR SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY

More information

Early Effect & BJT Biasing

Early Effect & BJT Biasing Early Effect & BJT Biasing Early Effect DC BJT Behavior DC Biasing the BJT 1 ESE319 Introduction to Microelectronics Early Effect Saturation region Forward-Active region 4 3 Ideal NPN BJT Transfer V Characteristic

More information

UNIT-III Bipolar Junction Transistor

UNIT-III Bipolar Junction Transistor DC UNT-3.xplain the construction and working of JT. UNT- ipolar Junction Transistor A bipolar (junction) transistor (JT) is a three-terminal electronic device constructed of doped semiconductor material

More information

ITT Technical Institute. ET215 Devices 1. Unit 6 Chapter 3, Sections

ITT Technical Institute. ET215 Devices 1. Unit 6 Chapter 3, Sections ITT Technical Institute ET215 Devices 1 Unit 6 Chapter 3, Sections 3.7-3.9 Chapter 3 Section 3.7 The Bipolar Transistor as a Switch Objectives: Explain how a transistor can be used as a switch 1. Compute

More information

TIP120, 121, 122, 125, 126, 127 Darlington Transistors

TIP120, 121, 122, 125, 126, 127 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. Collector-Emitter sustaining voltage-v CEO(sus) = 60V (Minimum) - TIP120, TIP125 80V (Minimum) - TIP121, TIP126 100V

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22

More information

HE8050S NPN EPITAXIAL PLANAR TRANSISTOR

HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Page No. : /5 NPN EPITAXIAL PLANAR TRANSISTOR Description The is designed for general purpose amplifier applications. Absolute Maximum Ratings TO-92 Maximum Temperatures Storage Temperature... -55 ~ +5

More information

MARKING: FULL PART NUMBER

MARKING: FULL PART NUMBER 2N2060M SILICON DUAL NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2060M is a silicon dual NPN transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for

More information

LM3046 Transistor Array

LM3046 Transistor Array Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected

More information

2N6054/2N6056 Darlington Transistors

2N6054/2N6056 Darlington Transistors Features: General-purpose power amplifier and low frequency switching applications. Low Collector-Emitter Saturation Voltage - V CE(SAT) = 2.0V (Maximum) at I C = 4.0A = 3.0V (Maximum) at I C = 8.0A Monolithic

More information

TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30

More information

Experiment 9 Bipolar Junction Transistor Characteristics

Experiment 9 Bipolar Junction Transistor Characteristics Experiment 9 Bipolar Junction Transistor Characteristics W.T. Yeung, W.Y. Leung, and R.T. Howe UC Berkeley EE 105 Fall 2005 1.0 Objective In this lab, you will determine the I C - V CE characteristics

More information