FP2 Low profile, high current power inductors
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- Mervin Parsons
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1 Supersedes July 014 FP Low profile, high current power inductors Product description High current carrying capacity Dual conductors allow for low inductance and high current or high inductance and lower current Inductance range from 0.047uH to 0.480uH Current range 9.0 to 4 mps 7. x 6.7mm footprint surface mount package in a.0 or 5.0mm heights Ferrite core material Halogen free, lead free, RoHS compliant pplications Servers Multi-phase and Vcore regulators Voltage Regulator Modules (VRMs) Server and desktop Central processing unit (CPU) Graphics processing unit (GPU) pplication specific integrated circuit (SIC) High power density Notebook regulators Battery power systems Graphics cards Environmental data Storage temperature range (component): -40 C to +15 C Operating temperature range: -40 C to +15 C (mbient plus self temperature rise) Solder reflow temperature: J-STD-00D compliant Pb HLOGEN HF FREE
2 FP Product specifications Part number 5 OCL 1 (μh) ±15% Single conductor l rms l sat DCR (Ω) 0 C Height maximum FP-S047-R FP-S068-R FP-S08-R FP-S100-R FP-S10-R FP-S00-R FP-V050-R FP-V100-R FP-V10-R FP-V150-R Double conductor FP-D047-R FP-D068-R FP-D08-R FP-D100-R FP-D10-R Series mode Part number 5 OCL 1 (μh) ±15% Double conductor l rms l sat DCR (Ω) 0 C Height maximum FP-D047-R FP-D068-R FP-D08-R FP-D100-R FP-D10-R Volt-μsec 4 (V-μs) Volt-μsec 4 (V-μs) 1. Open Circuit Inductance (OCL) Test parameters: 1.0MHz, 0.5Vrms, ).0dc, +5 C. Irms: DC current for an approximate temperature rise of 40 C without core loss. Derating is necessary for C currents. PCB layout, trace thickness and width, airflow, and proximity of other heat generating components will affect the temperature rise. It is recommended that the temperature of the part not exceed 15 C under worst case operating conditions verified in the end application.. Isat : Peak current for approximately 0% +0 C. 4. pplied Volt-Time product (V-μs) across the inductor. This value represents the applied V-μs at 500kHz necessary to generate a core loss equal to 10% of the total losses for 40 C temperature rise. 5. Part Number Definition: FP-xyyy-R FP = Product code and size x = Version indicator, S = single conductor, V = single conductor, D = dual conductor yyy = Inductance value in uh, R = decimal point -R suffix = RoHS compliant
3 FP Technical Data 4110 Dimensions mm Single conductor Dual conductor Part marking: FPS, V or D (S= single conductor, V= single conductor, D= dual conductor), xxx (xxx= inductance value in uh, R= decimal point) yww= date code Tolerances are ±0. millimeters unless stated otherwise ll soldering surfaces to be coplanar within 0.15 millimeters Do not route traces or vias underneath the inductor Packaging information Supplied in tape and reel packaging. FP-S,FP-D: 1,700 parts per 1 diameter reel. FP-S00, FP-V: 950 parts per 1 diameter reel. min / o=6.6mm Bo=7.1mm Ko=.mm (FP-S,FP-D) Ko=5.mm (FP-S00,FP-V) Ko Bo o Direction of Feed 7.5 +/-0.
4 FP Inductance characteristics Core loss IRMS DERTING WITH CORE LOSS 0 % of Losses from Irms (maximum) MHz 500KHz 00KHz 00KHz 100KHz % of pplied Volt-μ-Seconds 4
5 FP Technical Data 4110 Solder reflow profile T P Max. Ramp Up Rate = C/s Max. Ramp Down Rate = 6 C/s t P T C -5 C Table 1 - Standard SnPb Solder (T c ) Package Thickness mm <50 mm 50 T L Temperature T smax T smin Preheat ts t <.5mm) 5 C 0 C.5mm 0 C 0 C Table - Lead (Pb) Free Solder (T c ) Package Thickness mm <50 mm mm >000 <1.6mm 60 C 60 C 60 C 1.6.5mm 60 C 50 C 45 C >.5mm 50 C 45 C 45 C 5 C Time 5 C to Peak Time Reference JDEC J-STD-00D Profile Feature Standard SnPb Solder Lead (Pb) Free Solder Preheat and Soak Temperature min. (T smin ) 100 C 150 C Temperature max. (T smax ) 150 C 00 C Time (T smin to T smax ) (t s ) Seconds Seconds verage ramp up rate T smax to T p C/ Second Max. C/ Second Max. Liquidous temperature (Tl) Time at liquidous (t L ) 18 C Seconds Peak package body temperature (T P )* Table 1 Table 17 C Seconds Time (t p )** within 5 C of the specified classification temperature (T c ) 0 Seconds** 0 Seconds** verage ramp-down rate (T p to T smax ) 6 C/ Second Max. 6 C/ Second Max. Time 5 C to Peak Temperature 6 Minutes Max. 8 Minutes Max. * Tolerance for peak profile temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Life Support Policy: Eaton does not authorize the use of any of its products for use in life support devices or systems without the express written approval of an officer of the Company. Life support systems are devices which support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. Eaton reserves the right, without notice, to change design or construction of any products and to discontinue or limit distribution of any products. Eaton also reserves the right to change or update, without notice, any technical information contained in this bulletin. Eaton Electronics Division 1000 Eaton Boulevard Cleveland, OH 441 United States 015 Eaton ll Rights Reserved Printed in US Publication No BU-MC15058 December 015 Eaton is a registered trademark. ll other trademarks are property of their respective owners.
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Qxx30xHx & Qxx35xHx Series RoHS Description The 30 mp / 35 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation
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More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/4.7, R DS(ON) =4mW(max.) @ V GS =V R DS(ON) =6mW(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant)
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Sxx4xSx Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with micromps of current
More informationFeatures. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, =50mΩ(typ.) @ =4.5V =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, =90mΩ(typ.) @ =-4.5V =30mΩ(typ.) @ =-2.5V Reliable
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable
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