VP VERSA-PAC Inductors and Transformers (Surface Mount)

Size: px
Start display at page:

Download "VP VERSA-PAC Inductors and Transformers (Surface Mount)"

Transcription

1 Supersedes arch 00 Product features Six winding, surface mount devices that offer more than 00 usable inductor or transformer configurations igh power density and low profile ow radiated noise and tightly coupled windings Power range from Watt 0 Watts Frequency range to over z 00 Vac solation Ferrite core material pplications nductors: buck, boost, coupled, choke, filter, resonant, noise filtering, differential, forward, common mode Transformers: flyback, feed forward, pushpull, multiple output, inverter, step-up, stepdown, gate drive, base drive, wide band, pulse, control, impedance, isolation, bridging, ringer, converter, autoutomotive electronics (under hood, interior/exterior) Telematics PS ighting isplay Portable media devices nvironmental data Storage temperature range (component): - to Operating temperature range: -0 to (ambient plus self-temperature rise) Solder reflow temperature: -ST-00 (latest revision) compliant

2 Product specifications eakage Thermal Part () (S) ST( S) RS(S) R( S) Volt-µS(S) PK(S) nductance Resistance umber µ () () Ohms µvs µ (S) µ /Watt (O) () (TYP) ()() (TYP) ()() (X) () (X) () (TYP) () (TYP) (TYP) () -00-R (0) 0. /-0% R (0). /-0% R. /-0% R. /-0% R. /-0% R. /-0% R 0. /-0% R. /-0% R. /-0% R. /-0% R (0) 0 /-0% R (0). /-0% R. /-0% R 0. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R (0) /-0% R (0). /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R (0). /-0% R (0).0 /-0% R. /-0% R. /-0% R. /-0% R. /-0% R 0. /-0% R. /-0% R. /-0% R. /-0% R (0) /-0% R (0). /-0% R. /-0% R. /-0% R /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0%

3 Product specifications- notes () The first three or four digits in the part number signify the size of the package. The next four digits specify the, or nanoenries per turn squared. -R indicates RoS compliant. () S = ominal nductance of a single winding. () S is the lessor of ST(S) and RS(S). () Peak current that will result in 0% saturation of the core. This current value assumes that equal current flows in all six windings. For applications in which all windings are not simultaneously driven (i.e. flyback, SP, uk, etc.), the saturation current per winding may be calculated as follows: ST = x ST(S) umber of Windings riven () RS urrent that results in a surface temperature of approximately 0 above ambient. The 0 rise occurs when the specified current flows through each of the six windings. () aximum Resistance of each winding. () For multiple windings in series, the volt-µsecondtot (µvs) capability varies as the number of windings in series (S): Volt-µsec TOT = S x Volt-µsec (S) For multiple windings in parallel, the volt-µsecondtot (µvs) capability is as shown in the table above. imensions- mm () aximum nergy capability of each winding. This is based on 0% saturation of the core: nergy SRS = S x x 0. S x ST(S) nergy PR = P x x 0. S x ST(S) For multiple windings, the energy capability varies as the square of the number of windings. For example, six windings (either parallel or series) can store times more energy than one winding. () Thermal Resistance is the approximate surface temperature rise per Watt of heat loss under still-air conditions. eat loss is a combination of core loss and wire loss. The number assumes the underlying P copper area equals 0% of the component area. (0) These devices are designed for feed-forward applications, where load current dominates magnitizing current. VRS-P temperature rise depends on total power losses and size. ny other P configurations other than those suggested could run hotter than acceptable. ertain topologies or applications must be analyzed for needed requirements and matched with the best VRS-P size and configuration. Proper consideration must be used with all parameters, especially those associated with current rating, energy storage, or maximum volt-seconds. VRS-P should not be used in off-line or safety related applications. The breakdown voltage from one winding to any other winding is 00 V maximum. and ( PS) OO (OPTO) _- F RO P YOUT P (0PS) K (PS) OPOT 0 S (0PS) (PS) 0 OTS: )Tolerances - are ± 0. mm unless specified )Tolerances - P are /- 0. mm unless specified ) arking: a)ot for pin # identification b) ()x-xxx (product code, size, digit part c) Versa Pac ogo (optional) )ll soldering surfaces must be coplanar within 0.0 mm. )Packaged in tape and reel 00 parts per reel ( PS) WWYY R ( PS) ::::: F K O P mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm max ref max ref ref max ref ref ref ref ref max and

4 imensions- mm and ( PS) OO (OPTO) _- F RO P YOUT P (0PS) K (PS) OPOT 0 S (0PS) (PS) 0 OTS: ) Tolerances - are ± 0. mm unless specified ) Tolerances - P are /- 0. mm unless specified ) arking: a) ot for pin # identification b) ()x-xxx (product code, size, digit part c) Versa Pac ogo (optional) ) ll soldering surfaces must be coplanar within 0.0 mm. ) Packaged in tape and reel 00 parts per reel ( PS) WWYY R ( PS) ::::: F K O P mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm max ref max ref ref max ref ref ref ref ref max and and O (0PS) ( PS) ( PS) _- OO (OPTO) ( PS) F ( PS) (PS) OPOT S K (PS) 0 ::::: (0PS) OTS: ) Tolerances - are ± 0. mm unless specified ) Tolerances - P are /- 0. mm unless specified ) arking: a) ot for pin # identification b) ()x-xxx (product code, size, digit part c) Versa Pac ogo (optional) ) ll soldering surfaces must be coplanar within 0.0 mm. ) Packaged in tape and reel 00 parts per reel F K O mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm max ref max ref max ref ref ref ref ref max and

5 imensions- mm and O (0PS) ( PS) ( PS) _- OO (OPTO) ( PS) F ( PS) (PS) 0 OPOT S K (PS) ::::: (0PS) OTS: ) Tolerances - are ± 0. mm unless specified ) Tolerances - P are /- 0. mm unless specified ) arking: a) ot for pin # identification b) ()x-xxx (product code, size, digit part c) Versa Pac ogo (optional) ) ll soldering surfaces must be coplanar within 0.0 mm. ) ulk packaged For tape and reel add TR to part number: (i.e. -00TR-R) 0 parts per reel F K O mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm max ref max ref max ref ref ref ref ref max and and O (0PS) ( PS) ( PS) _- OO (OPTO) ( PS) F ( PS) (PS) 0 OPOT S K (PS) ::::: (0PS) OTS: ) Tolerances - are ± 0. mm unless specified ) Tolerances - P are /- 0. mm unless specified ) arking: a) ot for pin # identification b) ()x-xxx (product code, size, digit part c) Versa Pac ogo (optional) ) ll soldering surfaces must be coplanar within 0.0 mm. ) ulk packaged For tape and reel add TR to part number: (i.e. -0TR-R) parts per reel F K O mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm max ref max ref max ref ref ref ref ref max and

6 ow to use multiple windings iscrete inductors combine like resistors, when connected in series or parallel. For example, inductors in series add and inductors in parallel reduce in a way similar to Ohm s aw. Series =...n Parallel = / [/ / /.../n] Windings on the same magnetic core behave differently. Two windings in series result in four times the inductance of a single winding. This is because the inductance varies proportionately to the square of the turns. Paralleled VRS-P windings result in no change to the net inductance because the total number of turns remains unchanged; only the effective wire size becomes larger. Two parallel windings result in approximately twice the current carrying capability of a single winding. The net inductance of a given P configuration is based on the number of windings in series squared multiplied by the inductance of a single winding (S). The current rating of a P configuration is derived by multiplying the maximum current rating of one winding (S) by the number of windings in parallel. xamples of simple two-winding devices are shown below: Series onnected ( Windings) Parallel onnected ( Windings) 0µ mp 0µ mp 0µ mp 0µ mp TOT = S x S Where: = 0 µ x = 0 µ X = S x P = mp x = mp S = nductance of a single winding P = umber of windings in parallel (use with all windings in series) S = umber of windings in series S = aximum current rating of one winding TOT = S x S = 0 µ x = 0 µ X = S x P = mp x = mps

7 ow to pin-configure VRS-P ach VRS-P can be configured in a variety of ways by simply connecting pins together on the Printed ircuit oard (P). s shown below, the connections on the P are equal to the pin configuration statement shown at the bottom of the schematic symbol. onnecting a number of windings in parallel will increase the current carrying capability, while connecting in series will multiply the inductance. ach VRS-P part can be configured in at least combinations for inductor use or configured in at least turns ratios for transformer applications. The VRS-P allows for at least 00 magnetic configurations. The P configurations can either be created by the designer or simply chosen from the existing P diagrams. The following inductor example shows windings in series, which result in an inductance of times the base inductance and times the base current. UTOR XP FOR SZS, TOT = x S = times the base nductance from ata Table. omponent View 0 P OFURTOS (,)(,)(,0)(,)(,) ach VRS-P may be used in at least transformer applications. ore than transformer combinations may be achieved using the available VRS-P parts. TRSFORR XP FOR SZS, : PR = x S PRRY = x S S = x S 0 P OFURTOS (,)(,0)(,)(,) The P configurations may be selected from the examples above or created by the designer. The printed circuit board layout in each example illustrates the connections to obtain the desired inductance or turns ratio. The examples may be used by the P designer to configure VRS-P as desired. To assist the designer, VRS-P phasing, coupling and thermal issues have been considered in each of the P configurations illustrated. dditionally, the inductance and current ratings, as a function of the respective base values are shown in each P example. t is important to carefully select the proper VRS-P part in order to minimize the component size without exceeding the RS current capability or saturating the core. The Product specification table indicates maximum ratings.

8 VRS-P Performance characteristics ipolar (Push-Pull) Power vs Frequency nductance characteristics O vs. sat % Watts % 0.0% 0.0% Frequency, kz % of O 0.0% 0.0% 0.0% 0.0% 0.0 Unipolar (Flyback) Power vs Frequency 0.0% 0.0%.0 0.0% 0.0% 0.0% 0.0% 0.0% 0.0% 00.0% 0.0% 0.0% 0.0% 0.0% 00.0% 0.0 % of sat.0 Watts Frequency, kz These curves represent typical power handling capability. ndicated power levels may not be achievable with all configurations..v uck onverter This circuit utilizes the gap of the -00 to handle the. mp output current without saturating. n each of the five VRS- P sizes, the gap is varied to achieve a selection of specific inductance and current values (see VRS-P ata Table). ll six windings are connected in parallel to minimize / copper losses and to maximize heat dissipation. With VRS- P, this circuit works well at or above 00 Kz. lso, the closed flux-path F geometry enables much lower radiation characteristics than open-path bobbin core style components. V Synchronous ontroller 0 VRS-P -00.V@. V to.v uck onverter With V Output This circuit minimizes both board space and cost by eliminating a second regulator. VRS-P s gap serves to prevent core saturation during the switch on-time and also stores energy for the V load which is delivered during the flyback interval. The.V buck winding is configured by placing two windings in series while the V is generated by an additional flyback winding stacked on the.v output. xtra windings are paralleled with primary windings to handle more current. The turns ratio of : adds.v to the.v during the flyback interval to achieve V. V RT Synchronous ontroller VRS-P -00,,,, V@ V SFT 0,, RT.V@. TU-O TTRY TO.V SP OVRTR The voltage of a ithium-on attery varies above and below.v depending on the degree of charge. The SP configuration takes advantage of VRS-P s multiple tightly coupled windings. This results in lower ripple current which lowers noise and core losses substantially. The circuit does not require a snubber to control the voltage spike associated with switch turnoff, and is quite efficient due to lower RS current in the windings. ontroller W/ntegral Switch VRS-P V@

9 Solder Reflow Profile T P T Temperature T smax T smin ax. Ramp Up Rate = /s ax. Ramp own Rate = /s Preheat ts t t P T - Table - Standard SnPb Solder (T c ) Volume Volume Package mm mm Thickness <0 _>0 <.mm 0 _>.mm 0 0 Table - ead (Pb) Free Solder (T c ) Volume Volume Volume Package mm mm mm Thickness <0 0 - >000 <.mm mm 0 0 >.mm 0 Time to Peak Time Reference -ST-00 Profile Feature Standard SnPb Solder ead (Pb) Free Solder Preheat and Soak Temperature min. (T smin ) 00 0 Temperature max. (T smax ) 0 00 Time (T smin to T smax ) (t s ) 0-0 Seconds 0-0 Seconds verage ramp up rate T smax to T p / Second ax. / Second ax. iquidous temperature (T) Time at liquidous (t ) 0-0 Seconds 0-0 Seconds Peak package body temperature (T P )* Table Table Time (t p )** within of the specified classification temperature (T c ) 0 Seconds** 0 Seconds** verage ramp-down rate (T p to T smax ) / Second ax. / Second ax. Time to Peak Temperature inutes ax. inutes ax. * Tolerance for peak profile temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. ife Support Policy: aton does not authorize the use of any of its products for use in life support devices or systems without the express written approval of an officer of the ompany. ife support systems are devices which support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. aton reserves the right, without notice, to change design or construction of any products and to discontinue or limit distribution of any products. aton also reserves the right to change or update, without notice, any technical information contained in this bulletin. aton lectronics ivision 000 aton oulevard leveland, O United States 0 aton ll Rights Reserved Printed in US Publication o. 0 ugust 0 aton is a registered trademark. ll other trademarks are property of their respective owners.

High power density, high efficiency, low profile shielded drum core power inductors

High power density, high efficiency, low profile shielded drum core power inductors Supersedes pril 2014 High power density, high efficiency, low profile shielded drum pplications Notebook power LCD panels Desktop and servers DVD players and portable power devices DC-DC Converters Buck,

More information

discontinued October 31, 2017 or until inventory is

discontinued October 31, 2017 or until inventory is Supersedes June 2017 Applications Computer and portable power devices LCD panels, DVD players Inductor: DC-DC converters Buck, boost, forward, and resonant converters Noise filtering and filter chokes

More information

High power density, high efficiency, shielded drum core power inductors

High power density, high efficiency, shielded drum core power inductors Supersedes pril 4 High power density, high efficiency, shielded drum core power inductors pplications Desktop and servers DVD and media players Portable and handheld devices LCD panels DC-DC converters

More information

discontinued October 31, 2017 or until inventory is

discontinued October 31, 2017 or until inventory is Technical Data DS4314 Supersedes June 2017 ECONO-PAC /OCTA-PAC OCTA-PAC PLUS Applications Computer and portable power devices LCD panels, DVD players Inductor: DC-DC converters Buck, boost, forward, and

More information

DRQ. Dual winding, high power density, shielded drum core power inductors. Technical Data DS4311. Applications. Environmental data.

DRQ. Dual winding, high power density, shielded drum core power inductors. Technical Data DS4311. Applications. Environmental data. Supersedes pril 0 Dual winding, high power density, shielded drum core power inductors pplications Desktop and servers DVD and media players Portable and handheld devices LCD panels s a transformer: SEPIC,

More information

HCV1605 High current power inductors

HCV1605 High current power inductors Technical Data 188 High current power inductors pplications Compatible with Picor Cool-Power ZVS Buck and Buck-Boost Regulator Families Environmental data Storage temperature range (Component): -55 C to

More information

CMS Common mode inductors, surface mount

CMS Common mode inductors, surface mount Effective October 215 Supersedes March 27 Common mode inductors, surface mount pplications EMI filters DC-DC brick power supplies Discrete output supplies Discrete and point-of-use power supplies (PUPS)

More information

HCP0704 High current power inductors

HCP0704 High current power inductors Supersedes February 009 pplications Voltage Regulator Module (VRM) Multi-phase regulators Desktop and servers Base station equipment Notebook and laptop regulators Data networking and storage systems Point-of-load

More information

CLB1108 Multi-phase power inductors

CLB1108 Multi-phase power inductors Multi-phase power inductors Supersedes December 2013 Applications For exclusive use with Volterra or Maxim VPR-Devices Environmental Data Storage temperature range (component): -40 C to +125 C Operating

More information

SD3118 Low profile power inductors

SD3118 Low profile power inductors SD38 Low profile power inductors Supersedes November 009 pplications Mobile/smart phones Tablets/e-readers Media players Digital cameras Small LED driver and LCD displays Handheld/mobile equipment Description

More information

CL1208 Multi-phase power inductors

CL1208 Multi-phase power inductors Technical Data 1579 Effective December 216 CL128 Multi-phase power inductors Applications For exclusive use with Maxim Multi-phase controllers Voltage Regulator Modules (VRMs) and high power density VRMs

More information

FP2 Low profile, high current power inductors

FP2 Low profile, high current power inductors Supersedes July 014 FP Low profile, high current power inductors Product description High current carrying capacity Dual conductors allow for low inductance and high current or high inductance and lower

More information

HCV1707 High current power inductors

HCV1707 High current power inductors Technical Data 10712 High current power inductors Applications Compatible with Picor Cool-Power ZVS Buck and Buck-Boost Regulator Families Environmental data Storage temperature range (Component): -55

More information

HCM1305. High current power inductors. Technical Data Applications. Environmental data. Product features

HCM1305. High current power inductors. Technical Data Applications. Environmental data. Product features Supersedes June 2014 Applications Voltage Regulator Module (VRM) Multi-phase regulators Point-of-load modules Desktop and server VRMs and EVRDs Base station equipment Notebook and laptop regulators Battery

More information

Coiltronics DRQ Series Dual winding, shielded inductors/transformers

Coiltronics DRQ Series Dual winding, shielded inductors/transformers Technical Data Effective pril 0 Supersedes December 007 Coiltronics DRQ Series Dual winding, pplications s a transformer: SEPIC, flyback s an inductor: buck, boost, coupled inductor DC-DC Converters VRM

More information

Low profile metalized shielded drum core power inductors

Low profile metalized shielded drum core power inductors Technical Data PM43 Supersedes March 7 pplications Digital cameras Media players Mobile phones Hand held equipment PCMCI cards GPS systems Product features Six sizes of shielded drum core inductors with

More information

HCM1103 High current power inductors

HCM1103 High current power inductors Supersedes June 2012 Applications Product features 11.5 x 10.3 x 3.0 mm maximum surface mount package Iron powder core material Magnetically shielded, low EMI High current carrying capacity, low core losses

More information

HCM1707. High current power inductors. Technical Data Applications

HCM1707. High current power inductors. Technical Data Applications Supersedes August Applications Voltage Regulator Module (VRM) Multi-phase regulators Point-of-load modules Desktop and server VRMs and EVRDs Data networking and storage systems Base station equipment Battery

More information

DR1050 Shielded power inductors

DR1050 Shielded power inductors Shielded power inductors Supersedes March 2007 Applications LED/LCD backlighting High definition televisions (HDTV) Server and desktop power supplies Graphics cards and battery powered systems Point-of-load

More information

HCM1104 High current power inductors

HCM1104 High current power inductors Technical Data 4370 High current power inductors Supersedes September 2017 Applications Voltage Regulator Module (VRM) Multi-phase regulators Point-of-Load modules Desktop and server VRMs and EVRDs Base

More information

FP1309B High frequency, high current power inductors

FP1309B High frequency, high current power inductors Technical Data 10477 High frequency, high current power inductors Applications Servers Multi-phase and Vcore regulators Voltage Regulator Modules (VRMs) Server and desktop Central processing unit (CPU)

More information

FP1008R7 High frequency, high current power inductors

FP1008R7 High frequency, high current power inductors Technical Data 1629 Effective December 216 FP18R7 High frequency, high current power inductors Applications Multi-phase and Vcore regulators Voltage Regulator Modules (VRMs) and high power density VRMs

More information

DR1030 Shielded power inductors

DR1030 Shielded power inductors Supersedes March 2007 Applications LED/LCD backlighting High definition televisions (HDTV) Server and desktop power supplies Portable electronics Notebook and laptop regulators Graphics cards and battery

More information

DR1040 Shielded power inductors

DR1040 Shielded power inductors Shielded power inductors Supersedes March 007 Applications LED/LCD backlighting High definition televisions (HDTV) Server and desktop power supplies Portable electronics Graphics cards and battery powered

More information

HCM1307 High current power inductors

HCM1307 High current power inductors Applications Multi-phase regulators Voltage Regulator Modules (VRMs) Distributed power systems - converters Desktop and server VRMs and EVRDs Point-of-Load (POL) modules Field Programmable Gate Array (FPGA)

More information

MPI40-V2 High current, low profile, miniature power inductors

MPI40-V2 High current, low profile, miniature power inductors Applications Handheld/mobile devices Portable media players Notebook/netbook/laptop regulators Tablets/smartbooks Battery operated devices LED drivers LCD displays Point-of-load (POL) converters Product

More information

MPI25-V2 High current, low profile, miniature power inductors

MPI25-V2 High current, low profile, miniature power inductors Technical Data 649 Effective July 8 MPI-V High current, low profile, miniature power inductors Product features High current carrying capacity in a compact standard 8 ( metric) footprint Magnetically shielded,

More information

Automotive grade Dual winding, high power density shielded drum core power inductors

Automotive grade Dual winding, high power density shielded drum core power inductors Supersedes September 07 Dual winding, high power density shielded drum core power inductors Product features AEC-Q00 qualified Dual winding inductors that can be used as a single inductor, SEPIC, Flyback,

More information

FP1005R High frequency, high current power inductors

FP1005R High frequency, high current power inductors Supersedes December 2008 High frequency, high current power inductors Applications Multi-phase and Vcore regulators Voltage Regulator Modules (VRMs) Server and desktop Central processing unit (CPU) Graphics

More information

FP2207R High frequency, high current power inductors

FP2207R High frequency, high current power inductors Technical Data 10673 High frequency, high current power inductors Applications Multi-phase and Vcore regulators Voltage Regulator Modules (VRMs) and highpower density VRMs Server and desktop Central processing

More information

HCMA1305 Automotive grade High current power inductors

HCMA1305 Automotive grade High current power inductors Automotive grade High current power inductors Supersedes August 2014 Product features AEC-Q200 qualified High current carrying capacity Low core losses Magnetically shielded, low EMI Frequency range up

More information

HCMA1104 Automotive grade High current power inductors

HCMA1104 Automotive grade High current power inductors Automotive grade High current power inductors Supersedes October 2017 Product features AEC-Q200 qualified High current carrying capacity Magnetically shielded, low EMI Frequency range up to 5 MHz Inductance

More information

MPIA25-V2 Automotive grade High current, low profile, miniature power inductors

MPIA25-V2 Automotive grade High current, low profile, miniature power inductors Product features AEC-Q qualified High current carrying capacity in a compact standard 8 ( metric) footprint Magnetically shielded, Low EMI Rugged construction Self resonant frequency (SRF) greater than

More information

DRA. Automotive grade High power density, high efficiency, shielded drum core power inductors. Technical Data Applications.

DRA. Automotive grade High power density, high efficiency, shielded drum core power inductors. Technical Data Applications. Supersedes September 2017 High power density, high efficiency, shielded drum core power inductors Applications Body electronics o Headlamps, tail lamps and interior lighting o Heating Ventilation and Air

More information

MPIA40-V2 Automotive grade High current, low profile, miniature power inductors

MPIA40-V2 Automotive grade High current, low profile, miniature power inductors Technical Data 5 Effective April 7 MPIA-V Product features AEC-Q Grade qualified High current carrying capacity Magnetically shielded, Low EMI Rugged flexible construction Self resonant frequency (SRF)

More information

COMPLIANT Common Mode Chokes - UU9.8 & UU10.5 Series

COMPLIANT Common Mode Chokes - UU9.8 & UU10.5 Series Document FR00 COMPLIANT Common Mode Chokes - UU9.8 & UU0.5 Series Order Code MCU 000 MCU 0002 Core Mounting Inductance mh (Min) UU9.8 Series Current Rating ma (steady state) 350 350 Leakage DC Inductance

More information

HCM1A1305 Automotive grade High current power inductors

HCM1A1305 Automotive grade High current power inductors Technical Data Effective September HCMA Automotive grade High current power inductors Product features AEC-Q Grade qualified High current carrying capacity Magnetically shielded, low EMI Frequency range

More information

HCMA0703 Automotive grade High current power inductors

HCMA0703 Automotive grade High current power inductors Automotive grade High current power inductors Supersedes August 2014 Description Automotive grade 3 qualified High current carrying capacity, low core losses Magnetically shielded, low EMI Frequency range

More information

ECONO-PAC /OCTA-PAC OCTA-PAC PLUS Power Inductors and Transformers

ECONO-PAC /OCTA-PAC OCTA-PAC PLUS Power Inductors and Transformers Description Surface mount magnetics that can be used as single or coupled inductors or 1:1 transformers that provide isolation between two windings OCTA-PAC s are designed around high frequency, low loss

More information

High Current, High Frequency, Miniature Power Inductors

High Current, High Frequency, Miniature Power Inductors ECS-MPI4040 High Current, High Frequency, Automotive Applications: Driver assistance Information Entertainment Lighting Product description: AEC-Q200 Qualified, Grade 1 Handles high transient inrush current

More information

DRA Series High Power Density, High Efficiency, Shielded Inductors. Magnetics Solutions For Automotive Applications

DRA Series High Power Density, High Efficiency, Shielded Inductors. Magnetics Solutions For Automotive Applications For utomotive pplications Description 65 C maximum total temperature operation Five sizes of utomotive grade shielded drum core inductors Inductance range from.8uh to uh Current range up to 56 mps Mechanical

More information

0402ESDA-MLP ESD suppressor

0402ESDA-MLP ESD suppressor ESD suppressor Supersedes September 2010 Pb HALOGEN HF FREE Applications ESD port protection for mobile/smart phones Game console ESD port protection High speed ESD data port protection Set-top-boxes Tablets,

More information

H02N60 Series N-Channel Power Field Effect Transistor

H02N60 Series N-Channel Power Field Effect Transistor 6 Series -hannel Power ield ffect Transistor escription This high voltage OST uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

More information

0402ESDA-AEC Automotive grade ESD suppressor

0402ESDA-AEC Automotive grade ESD suppressor Technical Data 10763 Automotive grade ESD suppressor Pb HALOGEN HF FREE Product features AEC-Q200 qualifed Ultra-low capacitance (0.05 pf) ideal for high speed data applications Provides Electro Static

More information

DRQ Series Dual Winding, Shielded Inductors/Transformer

DRQ Series Dual Winding, Shielded Inductors/Transformer Description 5 C maximum total temperature operation Dual winding inductors that can be used as either a single inductor, or in coupled inductor/transformer applications (: turns ratio) Four sizes of shielded

More information

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices

More information

HP1, HPH1 HP2, HPH2 HP3, HPH3 HP4, HPH4 HP5, HPH5 HP6, HPH6. Winding Layout. Middle 11. Inner

HP1, HPH1 HP2, HPH2 HP3, HPH3 HP4, HPH4 HP5, HPH5 HP6, HPH6. Winding Layout. Middle 11. Inner Document - HP, HPH HP, HPH HP, HPH HP, HPH HP, HPH HP, HPH Six : isolated windings that can be connected in series or parallel Tightly coupled windings Power range: 0 Watts as inductor and flyback transformer;

More information

Features. P-Channel Enhancement Mode MOSFET

Features. P-Channel Enhancement Mode MOSFET P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3 R DS(ON) = 56mΩ (typ.) @ V GS = -4.5V R DS(ON) = 85mΩ (typ.) @ V GS = -2.5V R DS(ON) = 135mΩ (typ.) @ V GS = -1.8V Super High Dense Cell

More information

LR KHz, 3A PWM Buck DC/DC Converter

LR KHz, 3A PWM Buck DC/DC Converter ESHN RIO NY, T. 15KHz, 3 PWM Buck C/C Converter escription The is Monolithic IC that design for a stepdown C/C Converter, and own the ability of driving a 3 load without additional transistor component.

More information

Thyristors 30 / 35 Amp Alternistor (High Commutation) Triacs

Thyristors 30 / 35 Amp Alternistor (High Commutation) Triacs Qxx30xHx & Qxx35xHx Series RoHS Description The 30 mp / 35 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation

More information

Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET

Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5, R DS(ON) =38mΩ(Typ.) @ = V R DS(ON) =55mΩ(Typ.) @ = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices

More information

GS61008P Bottom-side cooled 100 V E-mode GaN transistor Preliminary Datasheet

GS61008P Bottom-side cooled 100 V E-mode GaN transistor Preliminary Datasheet Features 100 V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 7 mω I DS(max) = 90 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements

More information

Thyristors 25 Amp Standard & Alternistor (High Commutation) Triacs. Qxx25xx & Qxx25xHx Series. Description

Thyristors 25 Amp Standard & Alternistor (High Commutation) Triacs. Qxx25xx & Qxx25xHx Series. Description Qxx25xx & Qxx25xHx Series RoHS escription This 25 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls,

More information

Teccor brand Thyristors 15 Amp Standard & 16 Amp Alternistor (High Commutation) Triacs

Teccor brand Thyristors 15 Amp Standard & 16 Amp Alternistor (High Commutation) Triacs Qxx15xx & Qxx16xHx Series RoHS Description The 15 mp and 16 mp bi-directional solid state switch series are designed for C switching and phase control applications such as motor speed, temperature modulation

More information

Features. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V

Features. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =7.5mΩ (typ.) @ =V R DS(ON) =12mΩ (typ.) @ =4.5V Super High Dense Cell Design Reliable and Rugged valanche Rated D G S Top View

More information

Single-Phase Full-Wave Motor Driver with Built-in Hall Sensor. General Description

Single-Phase Full-Wave Motor Driver with Built-in Hall Sensor. General Description Single-Phase Full-Wave Motor Driver with uilt-in Hall Sensor Features On-chip Hall Sensor High Sensitivity Hall Effect Sensor IC: ±15G(Typ.) uilt-in Lock Protection and Auto Restart Function Speed Controllable

More information

DR Series High Power Density, High Efficiency, Shielded Inductors

DR Series High Power Density, High Efficiency, Shielded Inductors DR Series High Power Density, High Efficiency, Shielded Inductors Description 5 C maximum total operating temperature Four sizes of shielded drum core inductors Inductance range from.33µh to µh Current

More information

MSW3T SP3T Surface Mount High Power PIN Diode Switch

MSW3T SP3T Surface Mount High Power PIN Diode Switch RELEASED MSW3T-3200-150 SP3T Surface Mount High Power PIN Diode Switch Features: Surface Mount SP3T Switch: 9mm x 6mm x 2.5mm Range: 50 MHz to 3.0 GHz Industry Leading Average Power Handling: +50 m (CW)

More information

Features. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. Peak gate current t p. = 10 μs T J

Features. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. Peak gate current t p. = 10 μs T J Sx02xS Series RoHS Description New mp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SCR s junctions are glasspassivated

More information

GS61008T Top-side cooled 100 V E-mode GaN transistor Preliminary Datasheet

GS61008T Top-side cooled 100 V E-mode GaN transistor Preliminary Datasheet Features 100 V enhancement mode power switch Top-side cooled configuration R DS(on) = 7 mω I DS(max) = 90 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements

More information

Recommended Land Pattern: [mm]

Recommended Land Pattern: [mm] Dimensions: [mm] Recommended Land Pattern: [mm] Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 khz/ 100 mv L 1250 µh ±10% 6 7 1,7 Turns Ratio n 136 : 13 : 13 : 15 ±3%

More information

Teccor brand Thyristors 10 Amp Standard & Alternistor (High Communitation) Triacs. Qxx10xx & Qxx10xHx Series. Description

Teccor brand Thyristors 10 Amp Standard & Alternistor (High Communitation) Triacs. Qxx10xx & Qxx10xHx Series. Description Qxx10xx & Qxx10xHx Series RoHS Description 10 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls,

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON)

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON) SM268NSC N-Channel Enhancement Mode MOSFET Features Pin escription 3V/7.4, R S(ON) = 7mΩ(max.) @ V GS =V R S(ON) = 2.5mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green evices vailable (RoHS

More information

Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/9A, R DS(ON) = V GS = 4.5V = 4V = 3.

Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/9A, R DS(ON) = V GS = 4.5V = 4V = 3. ual N-Channel Enhancement Mode MOSFET Features 2V/9, = 9.5mW(max.) @ = 4.5V = mw(max.) @ = 4V =.5mW(max.) @ = 3.7V = 11.5mW(max.) @ = 3.1V = 13mW(max.) @ = 2.5V Reliable and Rugged ES Protected Lead Free

More information

OPTICALLY ISOLATED ERROR AMPLIFIER FOD2711 DESCRIPTION FEATURES APPLICATIONS PIN DEFINITIONS 9/6/02

OPTICALLY ISOLATED ERROR AMPLIFIER FOD2711 DESCRIPTION FEATURES APPLICATIONS PIN DEFINITIONS 9/6/02 DESCRIPTION The Optically Isolated Amplifier consists of the popular RC4A precision programmable shunt reference and an optocoupler. The optocoupler is a gallium arsenide (GaAs) light emitting diode optically

More information

Teccor brand Thyristors High Energy Unidirectional SIDACs

Teccor brand Thyristors High Energy Unidirectional SIDACs K2xx0yHU Series RoHS Description The new K2xx0yHU is a higher energy SIDC switch for gas ignition applications requiring higher current pulse current especially at low repetition rate. It is offered in

More information

AT2596 3A Step Down Voltage Switching Regulators

AT2596 3A Step Down Voltage Switching Regulators FEATURES Standard PSOP-8/TO-220-5L /TO-263-5L Package Adjustable Output Versions Adjustable Version Output Voltage Range 1.23V to 37V V OUT Accuracy is to ± 3% Under Specified Input Voltage the Output

More information

Features. General Description. Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC

Features. General Description. Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC Hall Effect Micro Switch IC Features General Description Micro Power Operation for Battery Applications Chopper Stabilized Amplifier Independent of North or South Pole Magnet, Easy for Manufacture Small

More information

Recommended Land Pattern: [mm]

Recommended Land Pattern: [mm] Dimensions: [mm] 0,5 ±0,3 2,0 ±0,2 Recommended Land Pattern: [mm] W 1,2 WIDE BAND / HIGH SPEED: W = 3,0 HIGH CURRENT: W = 4,0 1,0 Electrical Properties: Properties Test conditions Value Unit Tol. Impedance

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max.

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max. P-Channel Enhancement Mode MOSFET Features -3V/-68, R DS(ON) = 9mW(max.) @ V GS =-V R DS(ON) = 5mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) HBM ESD

More information

GS66516T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet

GS66516T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet Features 650 V enhancement mode power switch Top-side cooled configuration R DS(on) = 25 mω I DS(max) = 60 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements

More information

Assembly Material. Handling Code Temperature Range Package Code

Assembly Material. Handling Code Temperature Range Package Code Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, R DS(ON) =50mΩ(typ.) @ =4.5V R DS(ON) =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, R DS(ON) =90mΩ(typ.) @ =-4.5V R

More information

Kxxx0yU SIDAC Series. Thyristors Standard Unidirectional SIDACs. RoHS. Description

Kxxx0yU SIDAC Series. Thyristors Standard Unidirectional SIDACs. RoHS. Description Standard Unidirectional SIDCs xxx0yu SIDC Series RoHS Description The SIDC is a silicon unilateral voltage triggered switch. Upon application of a voltage exceeding the SIDC breakover voltage point, the

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max.

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max. P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable

More information

GS61004B 100V enhancement mode GaN transistor Preliminary Datasheet

GS61004B 100V enhancement mode GaN transistor Preliminary Datasheet Features 100V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 15 mω I DS(max) = 45 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements

More information

SMD Common Mode Choke SMC 37 Series. Features. Applications. Mechanical Dimensions (in mm) Land Pattern (in mm) Schematic. xxx xxx

SMD Common Mode Choke SMC 37 Series. Features. Applications. Mechanical Dimensions (in mm) Land Pattern (in mm) Schematic. xxx xxx SMC 37 Series Features Compact Size High impedance but very high rated current and low RDC RoHS compliant Operating temperature: 4 C to +125 C with (4 C rise) Irms current. Storage Temperature Range: -4

More information

SM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V

SM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V P-Channel Enhancement Mode MOSFET Features Pin Configuration -0V/-13A, R DS(ON) =205mΩ (max.) @ V GS =-V R DS(ON) =300mΩ (max.) @ V GS =-4V Reliable and Rugged D S G S D G Lead Free and Green Devices Available

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V P-Channel Enhancement Mode MOSFET Features -6V/-15, R DS(ON) =93mΩ(max.) @ V GS =-1V R DS(ON) =128mΩ(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) 1% UIS

More information

Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC

Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC Hall Effect Micro Switch IC Features Micro Power Operation for Battery pplications Chopper Stabilized mplifier Independent of North or South Pole Magnet, Easy for Manufacture Small Size Package Lead Free

More information

Teccor brand Thyristors 25 Amp Standard & Alternistor (High Commutation) Triacs

Teccor brand Thyristors 25 Amp Standard & Alternistor (High Commutation) Triacs escription 25 mp bi-directional solid state switch series is designed for switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static

More information

Lecture 6 ECEN 4517/5517

Lecture 6 ECEN 4517/5517 Lecture 6 ECEN 4517/5517 Experiment 4: inverter system Battery 12 VDC HVDC: 120-200 VDC DC-DC converter Isolated flyback DC-AC inverter H-bridge v ac AC load 120 Vrms 60 Hz d d Feedback controller V ref

More information

Package Code P : TO-220FB-3L. Date Code YYXXX WW

Package Code P : TO-220FB-3L. Date Code YYXXX WW N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ (typ.) @ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology

More information

SM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET

SM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS

More information

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max.

Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max. P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-9.3, R DS(ON) = 24mW(max.) @ V GS =-V R DS(ON) = 38mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable

More information

MSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch

MSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch PRELIMINARY MSW2T-2030-192/MSW2T-2031-192/MSW2T-2032-192 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 50 MHz to 6 GHz Surface Mount SP2T Switch 5mm x 8mm x 2.5mm

More information

Teccor brand Thyristors 16 Amp Standard SCR V DRM. Symbol Parameter Test Conditions Value Unit V DSM

Teccor brand Thyristors 16 Amp Standard SCR V DRM. Symbol Parameter Test Conditions Value Unit V DSM 16 mp Standard SCR RoHS Description The Littelfuse SCR S8016x series are specifically designed for Electric Vehicle On-Board Charger (EVOBC) applications. This SCR C line input rectifier can handle Level

More information

SEATING PLANE FUNCTIONAL BLOCK DIAGRAM 8 LED

SEATING PLANE FUNCTIONAL BLOCK DIAGRAM 8 LED DESCRIPTION The Optically Isolated Amplifier consists of the popular RC41A precision programmable shunt reference and an optocoupler. The optocoupler is a gallium arsenide (GaAs) light emitting diode optically

More information

Recommended Land Pattern: [mm]

Recommended Land Pattern: [mm] Dimensions: [mm] Recommended Land Pattern: [mm] Electrical Properties: 1 8 detail 0,3 ±0,05 16 1,27 9 Properties Test conditions Value Unit Tol. Inductance 100 khz/ 100 mv @ 8 m L 300 µh min. Insulation

More information

Thyristors 12 Amp Alternistor (High Communitation) Triacs

Thyristors 12 Amp Alternistor (High Communitation) Triacs Qxx12xHx Series RoHS Description This 12 Amp bidirectional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls,

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max.

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max. SM23NS N-Channel Enhancement Mode MOSFET Features Pin Description 2V/6, R DS(ON) =25mW (max.) @ =V R DS(ON) =3mW (max.) @ =4.5V R DS(ON) =4mW (max.) @ =2.5V R DS(ON) =6mW (max.) @ =.8V D G S Reliable and

More information

Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON)

Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON) Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, =50mΩ(typ.) @ =4.5V =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, =90mΩ(typ.) @ =-4.5V =30mΩ(typ.) @ =-2.5V Reliable

More information

General Description. Pin Configuration. Applications. Three-Terminal Low Current Positive Voltage Regulator

General Description. Pin Configuration. Applications. Three-Terminal Low Current Positive Voltage Regulator Three-Terminal Low Current Positive Voltage Regulator Features Three-Terminal Regulators Maximum Input Voltage : 30V Output Voltages of 5V, 12V Output Current Up to 100m No External Components Internal

More information

APM8005K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 80V/4.

APM8005K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 80V/4. Dual N-Channel Enhancement Mode MOSFET Features Pin Description 80V/4.7A, R DS(ON) =45mΩ (Typ.) @ V GS = 10V R DS(ON) =55mΩ (Typ.) @ V GS = 5V Reliable and Rugged Lead Free and Green Devices Available

More information

GS P Bottom-side cooled 100 V E-mode GaN transistor Preliminary Datasheet. Features. Applications. Description.

GS P Bottom-side cooled 100 V E-mode GaN transistor Preliminary Datasheet. Features. Applications. Description. Features 100 V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 5 mω I DS(max) = 120 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements

More information

Package Code. Handling Code. Assembly Material

Package Code. Handling Code. Assembly Material P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free

More information

Coiltronics. High Frequency Inductor Catalog Magnetics for Power Management

Coiltronics. High Frequency Inductor Catalog Magnetics for Power Management Coiltronics High Frequency Inductor Catalog Magnetics for Power Management Magnetics Products for Power Management Table of Contents Inductor Series Size (mm) Page FP0705 7 x 7 x 5 4 FP0708 7 x 8.5 x 7.

More information

Thyristors 8 Amp Sensitive & Standard SCRs. Sxx08xSx & Sxx08x Series. Description

Thyristors 8 Amp Sensitive & Standard SCRs. Sxx08xSx & Sxx08x Series. Description Sxx08xSx & Sxx08x Series RoHS Description This Sxx08x SCR series is ideal for uni-directional switch applications such as phase control, heating, motor speed controls, converters/rectifiers and capacitive

More information

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max.

Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max. N-Channel Enhancement Mode MOSFET Features Pin Description 3V/4.7, R DS(ON) =4mW(max.) @ V GS =V R DS(ON) =6mW(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant)

More information