VP VERSA-PAC Inductors and Transformers (Surface Mount)
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- William Taylor
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1 Supersedes arch 00 Product features Six winding, surface mount devices that offer more than 00 usable inductor or transformer configurations igh power density and low profile ow radiated noise and tightly coupled windings Power range from Watt 0 Watts Frequency range to over z 00 Vac solation Ferrite core material pplications nductors: buck, boost, coupled, choke, filter, resonant, noise filtering, differential, forward, common mode Transformers: flyback, feed forward, pushpull, multiple output, inverter, step-up, stepdown, gate drive, base drive, wide band, pulse, control, impedance, isolation, bridging, ringer, converter, autoutomotive electronics (under hood, interior/exterior) Telematics PS ighting isplay Portable media devices nvironmental data Storage temperature range (component): - to Operating temperature range: -0 to (ambient plus self-temperature rise) Solder reflow temperature: -ST-00 (latest revision) compliant
2 Product specifications eakage Thermal Part () (S) ST( S) RS(S) R( S) Volt-µS(S) PK(S) nductance Resistance umber µ () () Ohms µvs µ (S) µ /Watt (O) () (TYP) ()() (TYP) ()() (X) () (X) () (TYP) () (TYP) (TYP) () -00-R (0) 0. /-0% R (0). /-0% R. /-0% R. /-0% R. /-0% R. /-0% R 0. /-0% R. /-0% R. /-0% R. /-0% R (0) 0 /-0% R (0). /-0% R. /-0% R 0. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R (0) /-0% R (0). /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0% R (0). /-0% R (0).0 /-0% R. /-0% R. /-0% R. /-0% R. /-0% R 0. /-0% R. /-0% R. /-0% R. /-0% R (0) /-0% R (0). /-0% R. /-0% R. /-0% R /-0% R. /-0% R. /-0% R. /-0% R. /-0% R. /-0%
3 Product specifications- notes () The first three or four digits in the part number signify the size of the package. The next four digits specify the, or nanoenries per turn squared. -R indicates RoS compliant. () S = ominal nductance of a single winding. () S is the lessor of ST(S) and RS(S). () Peak current that will result in 0% saturation of the core. This current value assumes that equal current flows in all six windings. For applications in which all windings are not simultaneously driven (i.e. flyback, SP, uk, etc.), the saturation current per winding may be calculated as follows: ST = x ST(S) umber of Windings riven () RS urrent that results in a surface temperature of approximately 0 above ambient. The 0 rise occurs when the specified current flows through each of the six windings. () aximum Resistance of each winding. () For multiple windings in series, the volt-µsecondtot (µvs) capability varies as the number of windings in series (S): Volt-µsec TOT = S x Volt-µsec (S) For multiple windings in parallel, the volt-µsecondtot (µvs) capability is as shown in the table above. imensions- mm () aximum nergy capability of each winding. This is based on 0% saturation of the core: nergy SRS = S x x 0. S x ST(S) nergy PR = P x x 0. S x ST(S) For multiple windings, the energy capability varies as the square of the number of windings. For example, six windings (either parallel or series) can store times more energy than one winding. () Thermal Resistance is the approximate surface temperature rise per Watt of heat loss under still-air conditions. eat loss is a combination of core loss and wire loss. The number assumes the underlying P copper area equals 0% of the component area. (0) These devices are designed for feed-forward applications, where load current dominates magnitizing current. VRS-P temperature rise depends on total power losses and size. ny other P configurations other than those suggested could run hotter than acceptable. ertain topologies or applications must be analyzed for needed requirements and matched with the best VRS-P size and configuration. Proper consideration must be used with all parameters, especially those associated with current rating, energy storage, or maximum volt-seconds. VRS-P should not be used in off-line or safety related applications. The breakdown voltage from one winding to any other winding is 00 V maximum. and ( PS) OO (OPTO) _- F RO P YOUT P (0PS) K (PS) OPOT 0 S (0PS) (PS) 0 OTS: )Tolerances - are ± 0. mm unless specified )Tolerances - P are /- 0. mm unless specified ) arking: a)ot for pin # identification b) ()x-xxx (product code, size, digit part c) Versa Pac ogo (optional) )ll soldering surfaces must be coplanar within 0.0 mm. )Packaged in tape and reel 00 parts per reel ( PS) WWYY R ( PS) ::::: F K O P mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm max ref max ref ref max ref ref ref ref ref max and
4 imensions- mm and ( PS) OO (OPTO) _- F RO P YOUT P (0PS) K (PS) OPOT 0 S (0PS) (PS) 0 OTS: ) Tolerances - are ± 0. mm unless specified ) Tolerances - P are /- 0. mm unless specified ) arking: a) ot for pin # identification b) ()x-xxx (product code, size, digit part c) Versa Pac ogo (optional) ) ll soldering surfaces must be coplanar within 0.0 mm. ) Packaged in tape and reel 00 parts per reel ( PS) WWYY R ( PS) ::::: F K O P mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm max ref max ref ref max ref ref ref ref ref max and and O (0PS) ( PS) ( PS) _- OO (OPTO) ( PS) F ( PS) (PS) OPOT S K (PS) 0 ::::: (0PS) OTS: ) Tolerances - are ± 0. mm unless specified ) Tolerances - P are /- 0. mm unless specified ) arking: a) ot for pin # identification b) ()x-xxx (product code, size, digit part c) Versa Pac ogo (optional) ) ll soldering surfaces must be coplanar within 0.0 mm. ) Packaged in tape and reel 00 parts per reel F K O mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm max ref max ref max ref ref ref ref ref max and
5 imensions- mm and O (0PS) ( PS) ( PS) _- OO (OPTO) ( PS) F ( PS) (PS) 0 OPOT S K (PS) ::::: (0PS) OTS: ) Tolerances - are ± 0. mm unless specified ) Tolerances - P are /- 0. mm unless specified ) arking: a) ot for pin # identification b) ()x-xxx (product code, size, digit part c) Versa Pac ogo (optional) ) ll soldering surfaces must be coplanar within 0.0 mm. ) ulk packaged For tape and reel add TR to part number: (i.e. -00TR-R) 0 parts per reel F K O mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm max ref max ref max ref ref ref ref ref max and and O (0PS) ( PS) ( PS) _- OO (OPTO) ( PS) F ( PS) (PS) 0 OPOT S K (PS) ::::: (0PS) OTS: ) Tolerances - are ± 0. mm unless specified ) Tolerances - P are /- 0. mm unless specified ) arking: a) ot for pin # identification b) ()x-xxx (product code, size, digit part c) Versa Pac ogo (optional) ) ll soldering surfaces must be coplanar within 0.0 mm. ) ulk packaged For tape and reel add TR to part number: (i.e. -0TR-R) parts per reel F K O mm mm mm mm mm mm mm mm mm mm mm mm mm mm mm max ref max ref max ref ref ref ref ref max and
6 ow to use multiple windings iscrete inductors combine like resistors, when connected in series or parallel. For example, inductors in series add and inductors in parallel reduce in a way similar to Ohm s aw. Series =...n Parallel = / [/ / /.../n] Windings on the same magnetic core behave differently. Two windings in series result in four times the inductance of a single winding. This is because the inductance varies proportionately to the square of the turns. Paralleled VRS-P windings result in no change to the net inductance because the total number of turns remains unchanged; only the effective wire size becomes larger. Two parallel windings result in approximately twice the current carrying capability of a single winding. The net inductance of a given P configuration is based on the number of windings in series squared multiplied by the inductance of a single winding (S). The current rating of a P configuration is derived by multiplying the maximum current rating of one winding (S) by the number of windings in parallel. xamples of simple two-winding devices are shown below: Series onnected ( Windings) Parallel onnected ( Windings) 0µ mp 0µ mp 0µ mp 0µ mp TOT = S x S Where: = 0 µ x = 0 µ X = S x P = mp x = mp S = nductance of a single winding P = umber of windings in parallel (use with all windings in series) S = umber of windings in series S = aximum current rating of one winding TOT = S x S = 0 µ x = 0 µ X = S x P = mp x = mps
7 ow to pin-configure VRS-P ach VRS-P can be configured in a variety of ways by simply connecting pins together on the Printed ircuit oard (P). s shown below, the connections on the P are equal to the pin configuration statement shown at the bottom of the schematic symbol. onnecting a number of windings in parallel will increase the current carrying capability, while connecting in series will multiply the inductance. ach VRS-P part can be configured in at least combinations for inductor use or configured in at least turns ratios for transformer applications. The VRS-P allows for at least 00 magnetic configurations. The P configurations can either be created by the designer or simply chosen from the existing P diagrams. The following inductor example shows windings in series, which result in an inductance of times the base inductance and times the base current. UTOR XP FOR SZS, TOT = x S = times the base nductance from ata Table. omponent View 0 P OFURTOS (,)(,)(,0)(,)(,) ach VRS-P may be used in at least transformer applications. ore than transformer combinations may be achieved using the available VRS-P parts. TRSFORR XP FOR SZS, : PR = x S PRRY = x S S = x S 0 P OFURTOS (,)(,0)(,)(,) The P configurations may be selected from the examples above or created by the designer. The printed circuit board layout in each example illustrates the connections to obtain the desired inductance or turns ratio. The examples may be used by the P designer to configure VRS-P as desired. To assist the designer, VRS-P phasing, coupling and thermal issues have been considered in each of the P configurations illustrated. dditionally, the inductance and current ratings, as a function of the respective base values are shown in each P example. t is important to carefully select the proper VRS-P part in order to minimize the component size without exceeding the RS current capability or saturating the core. The Product specification table indicates maximum ratings.
8 VRS-P Performance characteristics ipolar (Push-Pull) Power vs Frequency nductance characteristics O vs. sat % Watts % 0.0% 0.0% Frequency, kz % of O 0.0% 0.0% 0.0% 0.0% 0.0 Unipolar (Flyback) Power vs Frequency 0.0% 0.0%.0 0.0% 0.0% 0.0% 0.0% 0.0% 0.0% 00.0% 0.0% 0.0% 0.0% 0.0% 00.0% 0.0 % of sat.0 Watts Frequency, kz These curves represent typical power handling capability. ndicated power levels may not be achievable with all configurations..v uck onverter This circuit utilizes the gap of the -00 to handle the. mp output current without saturating. n each of the five VRS- P sizes, the gap is varied to achieve a selection of specific inductance and current values (see VRS-P ata Table). ll six windings are connected in parallel to minimize / copper losses and to maximize heat dissipation. With VRS- P, this circuit works well at or above 00 Kz. lso, the closed flux-path F geometry enables much lower radiation characteristics than open-path bobbin core style components. V Synchronous ontroller 0 VRS-P -00.V@. V to.v uck onverter With V Output This circuit minimizes both board space and cost by eliminating a second regulator. VRS-P s gap serves to prevent core saturation during the switch on-time and also stores energy for the V load which is delivered during the flyback interval. The.V buck winding is configured by placing two windings in series while the V is generated by an additional flyback winding stacked on the.v output. xtra windings are paralleled with primary windings to handle more current. The turns ratio of : adds.v to the.v during the flyback interval to achieve V. V RT Synchronous ontroller VRS-P -00,,,, V@ V SFT 0,, RT.V@. TU-O TTRY TO.V SP OVRTR The voltage of a ithium-on attery varies above and below.v depending on the degree of charge. The SP configuration takes advantage of VRS-P s multiple tightly coupled windings. This results in lower ripple current which lowers noise and core losses substantially. The circuit does not require a snubber to control the voltage spike associated with switch turnoff, and is quite efficient due to lower RS current in the windings. ontroller W/ntegral Switch VRS-P V@
9 Solder Reflow Profile T P T Temperature T smax T smin ax. Ramp Up Rate = /s ax. Ramp own Rate = /s Preheat ts t t P T - Table - Standard SnPb Solder (T c ) Volume Volume Package mm mm Thickness <0 _>0 <.mm 0 _>.mm 0 0 Table - ead (Pb) Free Solder (T c ) Volume Volume Volume Package mm mm mm Thickness <0 0 - >000 <.mm mm 0 0 >.mm 0 Time to Peak Time Reference -ST-00 Profile Feature Standard SnPb Solder ead (Pb) Free Solder Preheat and Soak Temperature min. (T smin ) 00 0 Temperature max. (T smax ) 0 00 Time (T smin to T smax ) (t s ) 0-0 Seconds 0-0 Seconds verage ramp up rate T smax to T p / Second ax. / Second ax. iquidous temperature (T) Time at liquidous (t ) 0-0 Seconds 0-0 Seconds Peak package body temperature (T P )* Table Table Time (t p )** within of the specified classification temperature (T c ) 0 Seconds** 0 Seconds** verage ramp-down rate (T p to T smax ) / Second ax. / Second ax. Time to Peak Temperature inutes ax. inutes ax. * Tolerance for peak profile temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. ife Support Policy: aton does not authorize the use of any of its products for use in life support devices or systems without the express written approval of an officer of the ompany. ife support systems are devices which support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. aton reserves the right, without notice, to change design or construction of any products and to discontinue or limit distribution of any products. aton also reserves the right to change or update, without notice, any technical information contained in this bulletin. aton lectronics ivision 000 aton oulevard leveland, O United States 0 aton ll Rights Reserved Printed in US Publication o. 0 ugust 0 aton is a registered trademark. ll other trademarks are property of their respective owners.
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Dimensions: [mm] Recommended Land Pattern: [mm] Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 khz/ 100 mv L 1250 µh ±10% 6 7 1,7 Turns Ratio n 136 : 13 : 13 : 15 ±3%
More informationTeccor brand Thyristors 10 Amp Standard & Alternistor (High Communitation) Triacs. Qxx10xx & Qxx10xHx Series. Description
Qxx10xx & Qxx10xHx Series RoHS Description 10 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls,
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON)
SM268NSC N-Channel Enhancement Mode MOSFET Features Pin escription 3V/7.4, R S(ON) = 7mΩ(max.) @ V GS =V R S(ON) = 2.5mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green evices vailable (RoHS
More informationFeatures. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/9A, R DS(ON) = V GS = 4.5V = 4V = 3.
ual N-Channel Enhancement Mode MOSFET Features 2V/9, = 9.5mW(max.) @ = 4.5V = mw(max.) @ = 4V =.5mW(max.) @ = 3.7V = 11.5mW(max.) @ = 3.1V = 13mW(max.) @ = 2.5V Reliable and Rugged ES Protected Lead Free
More informationOPTICALLY ISOLATED ERROR AMPLIFIER FOD2711 DESCRIPTION FEATURES APPLICATIONS PIN DEFINITIONS 9/6/02
DESCRIPTION The Optically Isolated Amplifier consists of the popular RC4A precision programmable shunt reference and an optocoupler. The optocoupler is a gallium arsenide (GaAs) light emitting diode optically
More informationTeccor brand Thyristors High Energy Unidirectional SIDACs
K2xx0yHU Series RoHS Description The new K2xx0yHU is a higher energy SIDC switch for gas ignition applications requiring higher current pulse current especially at low repetition rate. It is offered in
More informationAT2596 3A Step Down Voltage Switching Regulators
FEATURES Standard PSOP-8/TO-220-5L /TO-263-5L Package Adjustable Output Versions Adjustable Version Output Voltage Range 1.23V to 37V V OUT Accuracy is to ± 3% Under Specified Input Voltage the Output
More informationFeatures. General Description. Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC
Hall Effect Micro Switch IC Features General Description Micro Power Operation for Battery Applications Chopper Stabilized Amplifier Independent of North or South Pole Magnet, Easy for Manufacture Small
More informationRecommended Land Pattern: [mm]
Dimensions: [mm] 0,5 ±0,3 2,0 ±0,2 Recommended Land Pattern: [mm] W 1,2 WIDE BAND / HIGH SPEED: W = 3,0 HIGH CURRENT: W = 4,0 1,0 Electrical Properties: Properties Test conditions Value Unit Tol. Impedance
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max.
P-Channel Enhancement Mode MOSFET Features -3V/-68, R DS(ON) = 9mW(max.) @ V GS =-V R DS(ON) = 5mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) HBM ESD
More informationGS66516T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet
Features 650 V enhancement mode power switch Top-side cooled configuration R DS(on) = 25 mω I DS(max) = 60 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
More informationAssembly Material. Handling Code Temperature Range Package Code
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, R DS(ON) =50mΩ(typ.) @ =4.5V R DS(ON) =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, R DS(ON) =90mΩ(typ.) @ =-4.5V R
More informationKxxx0yU SIDAC Series. Thyristors Standard Unidirectional SIDACs. RoHS. Description
Standard Unidirectional SIDCs xxx0yu SIDC Series RoHS Description The SIDC is a silicon unilateral voltage triggered switch. Upon application of a voltage exceeding the SIDC breakover voltage point, the
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable
More informationGS61004B 100V enhancement mode GaN transistor Preliminary Datasheet
Features 100V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 15 mω I DS(max) = 45 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
More informationSMD Common Mode Choke SMC 37 Series. Features. Applications. Mechanical Dimensions (in mm) Land Pattern (in mm) Schematic. xxx xxx
SMC 37 Series Features Compact Size High impedance but very high rated current and low RDC RoHS compliant Operating temperature: 4 C to +125 C with (4 C rise) Irms current. Storage Temperature Range: -4
More informationSM1A16PSU/UB. Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -100V/-13A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features Pin Configuration -0V/-13A, R DS(ON) =205mΩ (max.) @ V GS =-V R DS(ON) =300mΩ (max.) @ V GS =-4V Reliable and Rugged D S G S D G Lead Free and Green Devices Available
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features -6V/-15, R DS(ON) =93mΩ(max.) @ V GS =-1V R DS(ON) =128mΩ(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) 1% UIS
More informationApplications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC
Hall Effect Micro Switch IC Features Micro Power Operation for Battery pplications Chopper Stabilized mplifier Independent of North or South Pole Magnet, Easy for Manufacture Small Size Package Lead Free
More informationTeccor brand Thyristors 25 Amp Standard & Alternistor (High Commutation) Triacs
escription 25 mp bi-directional solid state switch series is designed for switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static
More informationLecture 6 ECEN 4517/5517
Lecture 6 ECEN 4517/5517 Experiment 4: inverter system Battery 12 VDC HVDC: 120-200 VDC DC-DC converter Isolated flyback DC-AC inverter H-bridge v ac AC load 120 Vrms 60 Hz d d Feedback controller V ref
More informationPackage Code P : TO-220FB-3L. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/ 29A R DS(ON) =.6mΩ (typ.) @ =V % EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology
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N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-9.3A, R DS(ON) =-10V = V GS. = 24mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-9.3, R DS(ON) = 24mW(max.) @ V GS =-V R DS(ON) = 38mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable
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DESCRIPTION The Optically Isolated Amplifier consists of the popular RC41A precision programmable shunt reference and an optocoupler. The optocoupler is a gallium arsenide (GaAs) light emitting diode optically
More informationRecommended Land Pattern: [mm]
Dimensions: [mm] Recommended Land Pattern: [mm] Electrical Properties: 1 8 detail 0,3 ±0,05 16 1,27 9 Properties Test conditions Value Unit Tol. Inductance 100 khz/ 100 mv @ 8 m L 300 µh min. Insulation
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Qxx12xHx Series RoHS Description This 12 Amp bidirectional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls,
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 20V/6A, R DS(ON) =10V =30mW V GS. =25mW (max.
SM23NS N-Channel Enhancement Mode MOSFET Features Pin Description 2V/6, R DS(ON) =25mW (max.) @ =V R DS(ON) =3mW (max.) @ =4.5V R DS(ON) =4mW (max.) @ =2.5V R DS(ON) =6mW (max.) @ =.8V D G S Reliable and
More informationFeatures. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/3A, R DS(ON)
Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, =50mΩ(typ.) @ =4.5V =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, =90mΩ(typ.) @ =-4.5V =30mΩ(typ.) @ =-2.5V Reliable
More informationGeneral Description. Pin Configuration. Applications. Three-Terminal Low Current Positive Voltage Regulator
Three-Terminal Low Current Positive Voltage Regulator Features Three-Terminal Regulators Maximum Input Voltage : 30V Output Voltages of 5V, 12V Output Current Up to 100m No External Components Internal
More informationAPM8005K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 80V/4.
Dual N-Channel Enhancement Mode MOSFET Features Pin Description 80V/4.7A, R DS(ON) =45mΩ (Typ.) @ V GS = 10V R DS(ON) =55mΩ (Typ.) @ V GS = 5V Reliable and Rugged Lead Free and Green Devices Available
More informationGS P Bottom-side cooled 100 V E-mode GaN transistor Preliminary Datasheet. Features. Applications. Description.
Features 100 V enhancement mode power switch Bottom-side cooled configuration R DS(on) = 5 mω I DS(max) = 120 A Ultra-low FOM Island Technology die Low inductance GaNPX package Easy gate drive requirements
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free
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Sxx08xSx & Sxx08x Series RoHS Description This Sxx08x SCR series is ideal for uni-directional switch applications such as phase control, heating, motor speed controls, converters/rectifiers and capacitive
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/4.7A, R DS(ON) =10V V GS. =40mW(max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/4.7, R DS(ON) =4mW(max.) @ V GS =V R DS(ON) =6mW(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant)
More informationCR1510. Off-Line Digital Green-Mode PWM Controller with Integrated Power BJT. 1.0 Features. 2.0 Description. 3.0 Applications
1.0 Features No-load power consumption
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