LT1057/LT1058 Dual and Quad, JFET Input Precision High Speed Op Amps DESCRIPTION FEATURES APPLICATIONS TYPICAL APPLICATION

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1 LT/ Dua and Quad, JFET Input Precision High Speed Op Amps FEATURES n V/µs Sew Rate: V/µs Min n MHz Gain-Bandwidth Product n Fast Setting Time:.µs to.% n µv Offset Votage (LT): µv Max n µv Offset Votage (): µv Max n µv/ C V OS Drift: µv/ C Max n pa Bias Current at C n Low Votage Noise: nv/ Hz at khz nv/ Hz at Hz APPLICATIONS n Precision, High Speed Instrumentation n Fast, Precision Sampe-and-Hod n Logarithmic Ampifiers n D/A Output Ampifiers n Photodiode Ampifiers n Votage-to-Frequency Converters n Frequency-to-Votage Converters DESCRIPTION The LT is a matched JFET input dua op amp in the industry standard -pin configuration, featuring a combination of outstanding high speed and precision specifications. It repaces a the popuar bipoar and JFET input dua op amps. In particuar, the LT upgrades the performance of systems using the LFA and OP- JFET input duas. The is the owest offset quad JFET input operationa ampifier in the standard -pin configuration. It offers significant accuracy improvement over presenty avaiabe JFET input quad operationa ampifiers. The can repace four singe precision JFET input op amps, whie saving board space, power dissipation and cost. Both the LT and are avaiabe in the pastic PDIP package and the surface mount SO package., LT, LTC and LTM are registered trademarks of Linear Technoogy Corporation. A other trademarks are the property of their respective owners. TYPICAL APPLICATION Current Output, High Speed, High Input Impedance Instrumentation Ampifier Distribution of Offset Votage (A Packages, LT and ) V V.k I OUT =.k.k R X 9.k Ω* 9.k.k.k k** (V V) R X I OUT PERCENT OF UNITS. LT: OP AMPS : OP AMPS OP AMPS TESTED..... INPUT OFFSET VOLTAGE (mv) TAb *GAIN ADJUST **COMMON MODE REJECTION ADJUST BANDWIDTH MHz TA fd

2 LT/ ABSOLUTE MAXIMUM RATINGS Suppy Votage...±V Differentia Input Votage...±V Input Votage...±V Output Short-Circuit Duration... Indefinite Storage Temperature Range... C to C Lead Temperature (Sodering, sec)... C (Note ) Operating Temperature Range LTAM/LTM/ AM/M (OBSOLETE)... C to C LTAC/LTC/LTS AC/C/S... C to C LTI/I... C T A C PACKAGE/ORDER INFORMATION NC NC OUT A IN A IN A V NC NC A TOP VIEW SW PACKAGE -LEAD PLASTIC (WIDE) SO T JMAX = C, θ JA = 9 C/W B ORDER PART NUMBER LTSW LTISW NC NC V OUT B IN B IN B NC 9 NC OUT A IN A IN A V IN B IN B OUT B NC TOP VIEW A B D SW PACKAGE -LEAD PLASTIC (WIDE) SO T JMAX = C, θ JA =9 C/W C ORDER PART NUMBER SW ISW OUTPUT A IN A IN A TOP VIEW OUT D IN D IN D V IN A V IN B IN B IN A OUT A V OUT B IN C S PACKAGE IN C -LEAD PLASTIC SO OUT C T JMAX = C, θ JA = C/W 9 NC Pease note that the LTS/LTIS standard surface mount pinout differs from that of the LT standard CERDIP/PDIP packages. TOP VIEW V A V (CASE) OUTPUT B IN B IN B H PACKAGE -LEAD METAL CAN B ORDER PART NUMBER LTS LTIS S PART MARKING I ORDER PART NUMBER LTAMH LTMH LTACH LTCH OUTPUT A IN A IN A V IN B IN B OUTPUT B A B TOP VIEW D 9 N PACKAGE -LEAD PDIP T JMAX = C, θ JA = C/W J PACKAGE -LEAD CERDIP T JMAX = C, θ JA = C/W C OUTPUT D IN D IN D V IN C IN C OUTPUT C ORDER PART NUMBER ACN CN AMJ MJ ACJ CJ Order Options Tape and Ree: Add #TR Lead Free: Add #PBF Lead Free Tape and Ree: Add #TRPBF Lead Free Part Marking: Consut LTC Marketing for parts specified with wider operating temperature ranges. ORDER PART NUMBER LTACN LTCN LTACJ LTCJ LTAMJ LTMJ OUTPUT IN A IN A V A TOP VIEW N PACKAGE -LEAD PDIP T JMAX = C, θ JA = C/W J PACKAGE -LEAD CERDIP T JMAX = C, θ JA = C/W B V OUTPUT B IN B IN B fd

3 LT/ ELECTRICAL CHARACTERISTICS,, V CM = V uness otherwise noted. (Note ) LTAM/AM LTAC/AC LTM/M LTC/C SYMBOL PARAMETER CONDITIONS TYP MAX TYP MAX UNITS V OS Input Offset Votage LT μv LT (S Package) μv μv OS Input Offset Current Fuy Warmed Up pa B Input Bias Current Fuy Warmed Up ± ± ± ± pa Input Resistance Differentia Ω Common Mode V CM = V to V Ω Common Mode V CM = V to V Ω Input Capacitance pf e n Input Noise Votage.Hz to Hz LT e n Input Noise Votage Density f O = Hz f O = khz (Note ).... µv P-P µv P-P nv/ Hz nv/ Hz i n Input Noise Current Density f O = Hz, khz (Note ).. fa/ Hz A VOL Large-Signa Votage Gain V O = ±V, R L = k V O = ±V, R L = k Input Votage Range ±... CMRR Common Mode Rejection Ratio, LT 9 ±... PSRR Power Suppy Rejection Ratio V S = ±V to ±V db V OUT Output Votage Swing R L = k ± ± ± ± V SR Sew Rate V/µs GBW Gain-Bandwidth Product f = MHz (Note ). MHz I S Suppy Current Per Ampifier.... ma Channe Separation DC to khz, V IN = ±V db 9 9 V/mV V/mV V V db db (LT/ SW Package Ony),,, V CM = V uness otherwise noted. SYMBOL PARAMETER CONDITIONS TYP MAX UNITS V OS Input Offset Votage LT... mv OS Input Offset Current Fuy Warmed Up pa B Input Bias Current Fuy Warmed Up ± ± pa Input Resistance Differentia Common Mode TΩ V CM = V to V V CM = V to V Input Capacitance pf e n Input Noise Votage.Hz to Hz LT. µv P-P. e n Input Noise Votage Density f O = Hz f O = khz... nv/ Hz fd

4 LT/ ELECTRICAL CHARACTERISTICS (LT/ SW Package Ony),,, V CM = V uness otherwise noted. SYMBOL PARAMETER CONDITIONS TYP MAX UNITS i n Input Noise Current Density f O = Hz, khz. fa/ Hz A VOL Large-Signa Votage Gain V O = ±V R L = k R L = k Input Votage Range ±... CMRR Common Mode Rejection Ratio V CM = ±V LT PSRR Power Suppy Rejection Ratio V S = ±V to ±V db V OUT Output Votage Swing R L = k ± ± V SR Sew Rate V/µs GBW Gain-Bandwidth Product f = MHz (Note ) MHz I S Suppy Current Per Ampifier.. ma Channe Separation DC to khz, V IN = ±V db 9 9 V/mV V db The denotes the specifications which appy over the temperature range of C T A C or C T A C (LTIS), otherwise specifications are., V CM = V, uness noted. LTAC AC LTC C SYMBOL PARAMETER CONDITIONS TYP MAX TYP MAX UNITS V OS Input Offset Votage LT μv LTIS μv LTS 9 μv μv Average Temperature LT H/J Package.. μv/ C Coefficient of Input N Package μv/ C (Offset Votage) LTS (Note ) μv/ C LTIS (Note ). μv/ C J Package (Note ). μv/ C N Package (Note ) μv/ C I OS nput Offset Current Warmed Up, T A = C pa LTIS I B Input Bias Current Warmed Up, T A = C ± ± ± ± pa LTIS ± ±9 A VOL Large-Signa Votage Gain V O = ±V, R L = k V/mV CMRR Common Mode Rejection Ratio V CM = ±.V 9 9 db PSRR Power Suppy Rejection Ratio V S = ±V to ±V db V OUT Output Votage Swing R L = k ± ±. ± ±. V I S Suppy Current Per Ampifier.. ma T A = C. ma fd

5 ELECTRICAL CHARACTERISTICS LT/ (LT/ SW Package Ony). The denotes specifications which appy over the temperature range of, V CM = V, C T A C (LTSW, SW) or C T A C (LTISW, ISW), uness otherwise noted. SYMBOL PARAMETER CONDITIONS TYP MAX UNITS V OS Input Offset Votage LT.. mv S IS.... Average Temperature Coefficient of Input Offset Votage µv/ C OS Input Offset Current Warmed Up, T A = C Warmed Up, T A = C B Input Bias Current Warmed Up, T A = C Warmed Up, T A = C A VOL Large-Signa Votage Gain V O = ±V, R L = k LT CMRR Common Mode Rejection Ratio V CM = ±.V LT PSRR Power Suppy Rejection Ratio V S = ±V to ±V LT V OUT Output Votage Swing R L = k ± ±. V ± ± 9 9 ± ± pa pa mv db db The denotes the specifications which appy over the temperature range of C T A C,, V CM = V, uness otherwise noted. LTAM AM LTM M SYMBOL PARAMETER CONDITIONS TYP MAX TYP MAX UNITS V OS Input Offset Votage LT μv μv Average Temperature Coefficient LT.. μv/ C of Input Offset Votage (Note ). μv/ C I OS nput Offset Current Warmed Up, T A = C.. na I B Input Bias Current Warmed Up, T A = C ±. ±. ±. ± na A VOL Large-Signa Votage Gain V O = ±V, R L = k V/mV CMRR Common Mode Rejection Ratio V CM = ±.V 9 9 db PSRR Power Suppy Rejection Ratio V S = ±V to ±V 9 db V OUT Output Votage Swing R L = k ± ±. ± ±. V I S Suppy Current Per Ampifier T A = C..9.. ma Note : Stresses beyond those isted under Absoute Maximum Ratings may cause permanent damage to the device. Exposure to any Absoute Maximum Rating condition for extended periods may affect device reiabiity and ifetime. Note : Typica parameters are defined as the % yied of distributions of individua ampifiers; (i.e., out of s or, LTs, typicay op amps, or for the LT, wi be better than the indicated specification). Note : This parameter is tested on a sampe basis ony. Note : Current noise is cacuated from the formua: i n = (q b ) / where q =. 9 couomb. The noise of source resistors up to G swamps the contribution of current noise. Note : This parameter is not % tested. Note : Gain-bandwidth product is not tested. It is guaranteed by design and by inference from the sew rate measurement. fd

6 LT/ TYPICAL PERFORMANCE CHARACTERISTICS INPUT BIAS AND OFFSET CURRENT (pa) Input Bias and Offset Currents vs Temperature V CM = V WARMED UP BIAS CURRENT OFFSET CURRENT AMBIENT TEMPERATURE ( C) G INPUT BIAS CURRENT, T A = C (na) Input Bias Current Over the Common-Mode Range T A = C T A = C COMMON MODE INPUT VOLTAGE (V) G INPUT BIAS CURRENT, TO C (pa) CHANGE IN OFFSET VOLTAGE (µv) Warm-Up Drift V S = ± V N PACKAGE LT N, J PACKAGE LT H PACKAGE LT J PACKAGE TIME AFTER POWER ON (UTES) G NUMBER OF UNITS Distribution of Offset Votage Drift with Temperature (H and J Package) LTH: OP AMPS LTJ: OP AMPS J: OP AMPS OP AMPS OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µv/ C) G NUMBER OF UNITS Distribution of Offset Votage Drift with Temperature (Pastic N Package) LTN: OP AMPS N: OP AMPS OP AMPS UNIT EACH AT 9,,, µv/ C OFFSET VOLTAGE DRIFT WITH TEMPERATURE (µv/ C) G OFFSET VOLTAGE CHANGE (µv) Long-Term Drift of Representative Units TIME (MONTHS) G RMS VOLTAGE NOISE DENSITY (nv/ Hz) Votage Noise vs Frequency.Hz to Hz Noise Votage Gain vs Temperature /f CORNER = Hz FREQUENCY (Hz) NOISE VOLTAGE (µv/div) TIME (SECONDS) VOLTAGE GAIN (V/mV) R L = k R L = k V = ±V TEMPERATURE ( C) G G G9 fd

vs Frequency k M FREQUENCY (Hz) M G G Sma-Signa Response Gain, Phase Shift vs Frequency Capacitive Load Handing mv/div A V = C L = pf.

7 TYPICAL PERFORMANCE CHARACTERISTICS LT/ V/DIV Large-Signa Response A V = C L = pf.µs/div G SLEW RATE (V/µs) Sew Rate, Gain-Bandwidth Product vs Temperature SLEW FALL GBW SLEW RISE TEMPERATURE ( C) GAIN BANDWIDTH PRODUCT (MHz) PEAK-TO-PEAK OUTPUT SWING (V) Undistorted Output Swing vs Frequency k M FREQUENCY (Hz) M G G Sma-Signa Response Gain, Phase Shift vs Frequency Capacitive Load Handing mv/div A V = C L = pf.µs/div G GAIN (db) PHASE MARGIN = GAIN PHASE C L = pf k k k M M M FREQUENCY (Hz) PHASE SHIFT (DEGREES) OVERSHOOT (%) A V = A V = A V = CAPACITIVE LOAD (pf) G G OUTPUT VOLTAGE SWING FROM V (V) Setting Time Channe Separation vs Frequency Output Impedance vs Frequency mv mv.mv SETTLING TIME (µs).mv FROM LEFT TO RIGHT: SETTLING TIME TO mv, mv, mv, mv,.mv G CHANNEL SEPARATION (db) LIMITED BY THERMAL INTERACTION AT DC = db R S = k LIMITED BY PIN-TO-PIN CAPACITANCE V IN = V P-P TO khz R L = k k k FREQUENCY (Hz) R S = Ω k G M OUTPUT IMPEDANCE (Ω). k A V = A V = A V = k k M FREQUENCY (Hz) G fd

8 LT/ TYPICAL PERFORMANCE CHARACTERISTICS CMRR (db) Common Mode Rejection Ratio vs Frequency k k k FREQUENCY (Hz) M M COMMON MODE RANGE (V) ± Common Mode Range vs Temperature TEMPERATURE ( C) CMRR, PSRR (db) 9 Common Mode and Power Suppy Rejections vs Temperature V S = ±V TO ±V FOR PSRR, V CM = ±.V FOR CMRR PSRR CMRR TEMPERATURE ( C) G9 G G POWER SUPPLY REJECTION RATIO (db) Power Suppy Rejection Ratio vs Frequency NEGATIVE SUPPLY POSITIVE SUPPLY SUPPLY CURRENT PER AMPLIFIER (ma) Suppy Current vs Temperature V S = ±V SHORT-CIRCUIT CURRENT (ma) Short-Circuit Current vs Time (One Output Shorted to Ground) T A = C T A = C T A = C T A = C k k k M M FREQUENCY (Hz) TEMPERATURE ( C) TIME FROM OUTPUT SHORT TO GROUND (UTES) G G G APPLICATIONS INFORMATION The LT may be inserted directy in LF, LF, LF, TL, TL and OP- sockets. The pugs into LF, LF, TL and TL sockets. Of course, a standard dua and quad bipoar op amps can aso be repaced by these devices. High Speed Operation When the feedback around the op amp is resistive (R F ) a poe wi be created with R F, the source resistance and capacitance (R S, C S ), and the ampifier input capacitance (C IN pf). In ow cosed oop gain configurations and with R S and R F in the kiohm range, this poe can create excess phase shift and even osciation. A sma capacitor (C F ) in parae with R F eiminates this probem. With R S (C S C IN ) = R F C F, the effect of the feedback poe is competey removed. R S C S C F C IN R F OUTPUT F fd

9 APPLICATIONS INFORMATION Setting time is measured in a test circuit which can be found in the LT/LT data sheet and in Appication Note. Achieving Picoampere/Microvot Performance In order to reaize the picoampere/microvot eve accuracy of the LT/, proper care must be exercised. For exampe, eakage currents in circuitry externa to the op amp can significanty degrade performance. High quaity insuation shoud be used (e.g., Tefon TM, Ke-F); ceaning of a insuating surfaces to remove fuxes and other residues wi probaby be required. Surface coating may be necessary to provide a moisture barrier in high humidity environments. Board eakage can be minimized by encircing the input circuitry with a guard ring operated at a potentia cose to that of the inputs; in inverting configurations, the guard ring shoud be tied to ground, in noninverting connections, to the inverting input. Guarding both sides of the printed circuit board is required. Buk eakage reduction depends on the guard ring width. The LT/ have the owest offset votage of any dua and quad JFET input op amps avaiabe today. However, the offset votage and its drift with time and temperature are sti not as good as on the best bipoar ampifiers (because the transconductance of FETs is consideraby ower than that of bipoar transistors). Conversey, this ower transconductance is the main cause of the significanty faster speed performance of FET input op amps. Tefon is a trademark of DuPont. LT/ Offset votage aso changes somewhat with temperature cycing. The AM grades show a typica µv hysteresis (µv on the M grades) when cyced over the C to C temperature range. Temperature cycing from C to C has a negigibe (ess than µv) hysteresis effect. The offset votage and drift performance are aso affected by packaging. In the pastic N package, the moding compound is in direct contact with the chip, exerting pressure on the surface. Whie NPN input transistors are argey unaffected by this pressure, JFET device drift is degraded. Consequenty for best drift performance, as shown in the Typica Performance Characteristics distribution pots, the J or H packages are recommended. In appications where speed and picoampere bias currents are not necessary, Linear Technoogy offers the bipoar input, pin compatibe LT and LT dua and quad op amps. These devices have significanty better DC specifications than any JFET input device. Phase Reversa Protection Most industry standard JFET input singe, dua and quad op amps (e.g., LF, LF, LF, LF, LF, OP-, OP-, OP-, TL) exhibit phase reversa at the output when the negative common mode imit at the input is exceeded (i.e., beow V with ±V suppies). The photos beow show a ±V sine wave input (A), the response of an LFA in the unity gain foower mode (B), and the response of the LT/ (C). The phase reversa of photo (B) can cause ock-up in servo systems. The LT/ does not phase-reverse due to a unique phase reversa protection circuit. (A) ±V Sine Wave Input (B) LFA Output (C) LT/ Output A Photos V/Div Vertica Scae, µs/div Horizonta Scae fd 9

10 LT/ TYPICAL APPLICATIONS Low Noise, Wideband, Gain = Ampifier with High Input Impedance.k Ω.k.k Ω INPUT Ω.k.k OUTPUT.k.k Ω db BANDWIDTH = khz GAIN-BANDWIDTH PRODUCT = MHz WIDEBAND NOISE = nv/ Hz =.nv/ Hz REFERRED TO INPUT RMS NOISE DC TO FULL BANDWIDTH = µv TA Wideband, High Input Impedance, Gain = Ampifier.k k.k k INPUT OUTPUT.k.k k k db BANDWIDTH = khz GAIN-BANDWIDTH PRODUCT = MHz WIDEBAND NOISE = nv/ Hz REFERRED TO INPUT Ω TA Low Distortion, Crysta Stabiized Osciator Ω COMMON MODE SUPPRESSION / LT pf CRYSTAL khz NT CUT k Ω # LAMP / LT.µF OSCILLATOR V RMS OUT khz.% DISTORTION TA fd

11 TYPICAL APPLICATIONS Fast, Precision Bridge Ampifier LT/ / LT pf k k k INPUT pf R / LOAD LT LT LT SLEW RATE = V/µs OUTPUT CURRENT TO LOAD = ma LOAD CAPACITANCE: UP TO µf TA Anaog Divider.k* k µf LTC B INPUT V k LT.V µf LTC. POLYSTYRENE V / LT V OUTPUT = A B µf A INPUT k* / LT pf k k * % FILM N9 V µf TA fd

12 LT/ TYPICAL APPLICATIONS Bipoar Input (AC) V/F Converter V k LTC LT.V.µF INPUT ±V.k* k. POLYSTYRENE V V µf N9 M* M* M* M* k k k pf DATA OUTPUT khz TO khz SIGN BIT.µF *% FILM MATCH M RESISTORS TO.% TA -Bit A/D Converter k INTEGRATOR FLIP-FLOP V.µF CLOCK k k B OUT E IN k*.µf V V.k V k pf N9 C pf k V k k k OUTPUT GATE A OUT LTC CURRENT SWITCH V Ω LEVEL SHIFT V N9 A DATA OUTPUT = OUT B OUT *VISHAY S- RESISTOR 9k* k k OUT LT IN V GND NC V TA fd

13 TYPICAL APPLICATIONS Instrumentation Ampifier with Shied Driver LT/ k R F 9.k k INPUT GUARD GUARD 9 R G k R G k V V OUTPUT R F 9.k k k GAIN = (R F /R G ) I B = pa R IN = Ω BW = khz TA9 db Range Logarithmic Photodiode Ampifier V I P LT-V IN OUT / LT k* Q k* pf k Q.µF LMA k* k M FULL-SCALE k* TRIM M / LT Q.µF k DARK TRIM E OUT k Ω Q = HP-- PIN PHOTODIODE. QQ = CA9. CONNECT SUBSTRATE OF CA9 ARRAY TO Q s EMITTER. *% RESISTOR db RANGE LOGARITHMIC PHOTODIODE AMPLIFIER Q 9 V LIGHT (9µM) MW µw µw µw nw nw RESPONSE DATA DIODE CURRENT µa µa.µa na na.na CIRCUIT OUTPUT.V.V.V.V.V.V TA fd

14 LT/ PACKAGE DESCRIPTION H Package -Lead TO- Meta Can (. Inch PCD) (Reference LTC DWG # --) TYP.. (..).. (.9.) INSULATING STANDOFF.. (..) PIN. (.) TYP SEATING PLANE..* (..).. (.9 9.9) DIA.. (..9). (.) MAX. (.) MAX.. (.9.99)..** (..) GAUGE PLANE.. (. 9.) REFERENCE PLANE * LEAD DIAMETER IS UNCONTROLLED BETWEEN THE REFERENCE PLANE AND THE SEATING PLANE.. ** FOR SOLDER DIP LEAD FINISH, LEAD DIAMETER IS (..) H(TO-). PCD. BSC (. BSC) J Package -Lead CERDIP (Narrow. Inch, Hermetic) (Reference LTC DWG # --) CORNER LEADS OPTION ( PLCS). (.) MAX. (.). (.) MAX.. (..) NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE OR TIN PLATE LEADS.. (..) FULL LEAD OPTION.. (..) HALF LEAD OPTION.. (..).. (..).. (..). (.) BSC... (.) RAD TYP.. (..) J J Package -Lead CERDIP (Narrow. Inch, Hermetic) (Reference LTC DWG # --). BSC (. BSC).. (..). (.) MAX. (.). (9.99) MAX 9.. (..) NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE OR TIN PLATE LEADS.. (..).. (..). (.) BSC. (.). RAD TYP (.) J.. (..) OBSOLETE PACKAGES fd

15 PACKAGE DESCRIPTION N Package -Lead PDIP (Narrow. Inch) (Reference LTC DWG # -- Rev I) LT/.. (..).* (.) MAX.. (..). ±. (. ±.).. (..) ( ). ±.* (. ±.). (.) TYP. (.) BSC. (.). ±. (. ±.). (.) N REV I NOTE: INCHES. DIMENSIONS ARE MILLIMETERS *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED. INCH (.mm) N Package -Lead PDIP (Narrow. Inch) (Reference LTC DWG # -- Rev I).. (..).* (9.) MAX. ±. (. ±.).. (..).. (..). ±.* (. ±.) 9. (.). (.) TYP ( ) NOTE: INCHES. DIMENSIONS ARE MILLIMETERS *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED. INCH (.mm). (.). (.). (.) BSC. ±. (. ±.) N REV I S Package -Lead Pastic Sma Outine (Narrow. Inch) (Reference LTC DWG # -- Rev G). BSC. ±..9.9 (..) NOTE.. ±... (.9.9).. (..9) NOTE..9 (..).. (..).. (..).. (..) TYP. ±. TYP RECOMMENDED SOLDER PAD LAYOUT NOTE: INCHES. DIMENSIONS IN (MILLIMETERS). DRAWING NOT TO SCALE. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED." (.mm). PIN CAN BE BEVEL EDGE OR A DIMPLE..9 (..) TYP. (.) BSC Information furnished by Linear Technoogy Corporation is beieved to be accurate and reiabe. However, no responsibiity is assumed for its use. Linear Technoogy Corporation makes no representation that the interconnection of its circuits as described herein wi not infringe on existing patent rights... (..) SO REV G fd

16 LT/ TYPICAL APPLICATION SW Package -Lead Pastic Sma Outine (Wide. Inch) (Reference LTC DWG # --). ±. TYP N. BSC. ±..9. (.9.9) NOTE 9 N.. ±. NOTE.9.9 (..) N/ N/. (.) RAD RECOMMENDED SOLDER PAD LAYOUT.9.99 (.9.9) NOTE..9 (..) TYP.9. (..).. (.9.) (.) (..) (.9.) NOTE BSC..9.. (..) (..) TYP NOTE: INCHES. DIMENSIONS IN (MILLIMETERS). DRAWING NOT TO SCALE. PIN IDENT, NOTCH ON TOP AND CAVITIES ON THE BOTTOM OF PACKAGES ARE THE MANUFACTURING OPTIONS. THE PART MAY BE SUPPLIED WITH OR WITHOUT ANY OF THE OPTIONS. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED." (.mm) S (WIDE) RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT/ Precision, High Speed, JFET Input V/µs Sew Rate,.MHz Bandwidth Operationa Ampifiers LT SOT-, Rai-to-Rai Output, Picoamp Input µv Max Offset Votage, 9pA Max Input Bias Current Precision Op Amps LT/ Dua and Quad Rai-to-Rai Output, Picoamp Input µv Max Offset Votage, pa Max Input Bias Current Precision Op Amps LT/ Dua/Quad Rai-to-Rai Output, Picoamp Input µv Max Offset Votage, pa Max Input Bias Current Precision Op Amps LT µa, nv/rthz, Rai-to-Rai Output, Precision µv Max Offset Votage, pa Max Input Bias Current Low Power Op Amp with Shutdown LT/ Dua/Quad µa, nv/rthz, Rai-to-Rai Output µv Max Offset Votage, pa Max Input Bias Current Precision Low Power Op Amp LTC/9 Micropower Precision, Dua/Quad CMOS Maximum Offset Drift:.µV/ C Rai-to-Rai Input/Output Ampifiers LTC/ Dua/Quad MHz, Low Noise, Rai-to-Rai CMOS Op Amps O.Hz to Hz Noise: n Vpp LT REV D PRINTED IN USA Linear Technoogy Corporation McCarthy Bvd., Mipitas, CA 9- () -9 FAX: () - LINEAR TECHNOLOGY CORPORATION 99 fd

FEATURES APPLICATIO S TYPICAL APPLICATIO. LT1102 High Speed, Precision, JFET Input Instrumentation Amplifier (Fixed Gain = 10 or 100) DESCRIPTIO

FEATURES APPLICATIO S TYPICAL APPLICATIO. LT1102 High Speed, Precision, JFET Input Instrumentation Amplifier (Fixed Gain = 10 or 100) DESCRIPTIO FEATRES Slew Rate: V/μs Gain-Bandwidth Product: MHz Settling Time (.%): μs Overdrive Recovery:.μs Gain Error:.% Max Gain Drift: ppm/ C Gain Nonlinearity: ppm Max Offset Voltage (Input Output): μv Max Drift