6.012 Microelectronic Devices and Circuits

Size: px
Start display at page:

Download "6.012 Microelectronic Devices and Circuits"

Transcription

1 MIT, Spring Microelectronic Devices and Circuits Jesús del Alamo Dimitri Antoniadis, Judy Hoyt, Charles Sodini Pablo Acosta, Susan Luschas, Jorg Scholvin, Niamh Waldron

2 Lecture overview February 4, 2003 Contents: Overview of Reading Assignment: Howe and Sodini, Ch. 1

3

4 Overview of Introductory subject to microelectronic devices and circuits Microelectronics is cornerstone of: Computer revolution Communications revolution

5 Microelectronics: cornerstone of computing revolution Calculations per second/$ E+08 1.E+06 1.E+04 1.E+02 1.E+00 1.E-02 1.E-04 from R. Kurzweil in "The Age of Spiritual Machines ", 1999 vacuum tube logic electromechanical logic mechanical logic discrete transistor logic IC logic 1.E Year In last 30 years, computer performance per dollar has improved more than a million fold!

6 Microelectronics: cornerstone of communications revolution In last 20 years, communication bandwidth through a single optical fiber has increased by ten-thousand fold.

7 Si digital microelectronics today Take the cover off a microprocessor. What do you see? A thick web of interconnects, many levels deep. High density of very small transistors. Intel s Pentium IV

8 Interconnects Today, as many as 8 levels of interconnect using Cu.

9 Transistor size scaling 10 size of human blood cell data for Intel processors Technology generation ( µm) size of a virus Year 2-orders of magnitude reduction in transistor size in 30 years.

10 Evolution of transistor density Number of transistors 1.E+08 1.E+07 1.E+06 1.E+05 1.E x/year 2x/1.5year Moore s Law: doubling of transistor density every 1.5 years 4-orders of magnitude improvement in 30 years. 1.E+03 Intel processors Year

11 Benefits of increasing transistor integration Exponential improvements in: system performance cost-per-function, power-per-function, and system reliability. Experimental SOI microprocessor from IBM

12 Clock speed Frequency (Hz) 1.E+09 1.E+08 1.E+07 1.E+06 4-orders of magnitude improvement in 30 years. Intel processors 1.E Year

13 Transistor cost Transistor cost ($) 1.E-01 1.E-02 1.E-03 1.E-04 3-order of magnitude reduction in 30 years. Intel processors 1.E Year

14 Cost per function $/MHz 1.E-02 1.E-03 1.E-04 1.E-05 4-order of magnitude reduction in 30 years. 1.E-06 1.E-07 Intel processors Year

15 Keys to success of digital microelectronics: I. Silicon Cheap and abundant Amazing mechanical, chemical and electronic properties Probably, the material best known to humankind

16 Keys to success of digital microelectronics: II. MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET = switch Good gain, isolation, and speed

17 Keys to success of digital microelectronics: III. MOSFET scaling Gate delay (ps) MOSFET performance improves as size is decreased: Shorter switching time Lower power consumption Gate length (µm)

18 Keys to success of digital microelectronics: IV. CMOS CMOS: Complementary Metal-Oxide-Semiconductor Complementary switch activates with V<0. Logic without DC power consumption.

19 Keys to success of digital microelectronics: V. Microfabrication technology DSP core from IBM Tight integration of dissimilar devices with good isolation Fabrication of extremely small structures, precisely and reproducibly High-volume manufacturing of complex systems with high yield.

20 Keys to success of digital microelectronics: VI. Circuit engineering Simple device models that: are based on physics allow analog and digital circuit design permit assessment of impact of device variations on circuit performance Circuit design techniques that: are tolerant to logic level fluctuations, noise and crosstalk are insensitive to manufacturing variations require little power consumption

21 Content of Deals with microelectronic devices Semiconductor physics Metal-oxide-semiconductor field-effect transistor (MOSFET) Bipolar junction transistor (BJT) and microelectronic circuits Digital circuits (mainly CMOS) Analog circuits (BJT and MOS)

22 One shouldn t work on semiconductors, that is a filthy mess; who knows if they really exist! Wolfgang Pauli, 1931

23 To the electron may it never be of any use to anybody. favorite toast at annual dinners at Cavendish Laboratory, early 1900 s

6.012 Microelectronic Devices and Circuits

6.012 Microelectronic Devices and Circuits MIT, Spring 2009 6.012 Microelectronic Devices and Circuits Charles G. Sodini Jing Kong Shaya Famini, Stephanie Hsu, Ming Tang Lecture 1 6.012 Overview Contents: Overview of 6.012 Reading Assignment: Howe

More information

Lecture Introduction

Lecture Introduction Lecture 1 6.012 Introduction 1. Overview of 6.012 Outline 2. Key conclusions of 6.012 Reading Assignment: Howe and Sodini, Chapter 1 6.012 Electronic Devices and Circuits-Fall 200 Lecture 1 1 Overview

More information

Lecture Wrap up. December 13, 2005

Lecture Wrap up. December 13, 2005 6.012 Microelectronic Devices and Circuits Fall 2005 Lecture 26 1 Lecture 26 6.012 Wrap up December 13, 2005 Contents: 1. 6.012 wrap up Announcements: Final exam TA review session: December 16, 7:30 9:30

More information

Semiconductor Devices

Semiconductor Devices Semiconductor Devices - 2014 Lecture Course Part of SS Module PY4P03 Dr. P. Stamenov School of Physics and CRANN, Trinity College, Dublin 2, Ireland Hilary Term, TCD 3 th of Feb 14 MOSFET Unmodified Channel

More information

Integrated Circuit Technology (Course Code: EE662) Lecture 1: Introduction

Integrated Circuit Technology (Course Code: EE662) Lecture 1: Introduction Indian Institute of Technology Jodhpur, Year 2015 2016 Integrated Circuit Technology (Course Code: EE662) Lecture 1: Introduction Course Instructor: Shree Prakash Tiwari, Ph.D. Email: sptiwari@iitj.ac.in

More information

EMT 251 Introduction to IC Design

EMT 251 Introduction to IC Design EMT 251 Introduction to IC Design (Pengantar Rekabentuk Litar Terkamir) Semester II 2011/2012 Introduction to IC design and Transistor Fundamental Some Keywords! Very-large-scale-integration (VLSI) is

More information

MICROPROCESSOR TECHNOLOGY

MICROPROCESSOR TECHNOLOGY MICROPROCESSOR TECHNOLOGY Assis. Prof. Hossam El-Din Moustafa Lecture 3 Ch.1 The Evolution of The Microprocessor 17-Feb-15 1 Chapter Objectives Introduce the microprocessor evolution from transistors to

More information

Chapter 3 Digital Logic Structures

Chapter 3 Digital Logic Structures Chapter 3 Digital Logic Structures Transistor: Building Block of Computers Microprocessors contain millions of transistors Intel Pentium 4 (2000): 48 million IBM PowerPC 750FX (2002): 38 million IBM/Apple

More information

Lecture 1 Introduction to Electronic

Lecture 1 Introduction to Electronic Lecture 1 Introduction to Electronic Present by : Thawatchai Thongleam Faculty of Science and Technology Nakhon Pathom Rajabhat Uniersity Electronic Engineering Lecture 1 Introduction to Electronic Lecture

More information

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known

More information

Progress due to: Feature size reduction - 0.7X/3 years (Moore s Law). Increasing chip size - 16% per year. Creativity in implementing functions.

Progress due to: Feature size reduction - 0.7X/3 years (Moore s Law). Increasing chip size - 16% per year. Creativity in implementing functions. Introduction - Chapter 1 Evolution of IC Fabrication 1960 and 1990 integrated t circuits. it Progress due to: Feature size reduction - 0.7X/3 years (Moore s Law). Increasing chip size - 16% per year. Creativity

More information

Digital Integrated Circuits

Digital Integrated Circuits Digital Integrated Circuits Yaping Dan ( 但亚平 ), PhD Office: Law School North 301 Tel: 34206045-3011 Email: yapingd@gmail.com Digital Integrated Circuits Introduction p-n junctions and MOSFETs The CMOS

More information

Introduction to Electronic Devices

Introduction to Electronic Devices (Course Number 300331) Fall 2006 Instructor: Dr. Dietmar Knipp Assistant Professor of Electrical Engineering Information: http://www.faculty.iubremen.de/dknipp/ Source: Apple Ref.: Apple Ref.: IBM Critical

More information

VLSI: An Introduction

VLSI: An Introduction Chapter 1 UEEA2223/UEEG4223 Integrated Circuit Design VLSI: An Introduction Prepared by Dr. Lim Soo King 02 Jan 2011. Chapter 1 VLSI Design: An Introduction... 1 1.0 Introduction... 1 1.0.1 Early Computing

More information

Lecture 26 - Design Problems & Wrap-Up. May 15, 2003

Lecture 26 - Design Problems & Wrap-Up. May 15, 2003 6.012 Microelectronic Devices and Circuits - Spring 2003 Lecture 26-1 Lecture 26 - Design Problems & 6.012 Wrap-Up May 15, 2003 Contents: 1. Design process 2. Design project pitfalls 3. Lessons learned

More information

ELCN100 Electronic Lab. Instruments and Measurements Spring Lecture 01: Introduction

ELCN100 Electronic Lab. Instruments and Measurements Spring Lecture 01: Introduction ELCN100 Electronic Lab. Instruments and Measurements Spring 2018 Lecture 01: Introduction Dr. Hassan Mostafa حسن مصطفى د. hmostafa@uwaterloo.ca LAB 1 Cairo University Course Outline Course objectives To

More information

Sub-micron technology IC fabrication process trends SOI technology. Development of CMOS technology. Technology problems due to scaling

Sub-micron technology IC fabrication process trends SOI technology. Development of CMOS technology. Technology problems due to scaling Goodbye Microelectronics Welcome Nanoelectronics Sub-micron technology IC fabrication process trends SOI technology SiGe Tranzistor in 50nm process Virus The thickness of gate oxide= 1.2 nm!!! Today we

More information

EE 320 L LABORATORY 9: MOSFET TRANSISTOR CHARACTERIZATIONS. by Ming Zhu UNIVERSITY OF NEVADA, LAS VEGAS 1. OBJECTIVE 2. COMPONENTS & EQUIPMENT

EE 320 L LABORATORY 9: MOSFET TRANSISTOR CHARACTERIZATIONS. by Ming Zhu UNIVERSITY OF NEVADA, LAS VEGAS 1. OBJECTIVE 2. COMPONENTS & EQUIPMENT EE 320 L ELECTRONICS I LABORATORY 9: MOSFET TRANSISTOR CHARACTERIZATIONS by Ming Zhu DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING UNIVERSITY OF NEVADA, LAS VEGAS 1. OBJECTIVE Get familiar with MOSFETs,

More information

Introduction. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002

Introduction. Digital Integrated Circuits A Design Perspective. Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, 2002 Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Introduction July 30, 2002 1 What is this book all about? Introduction to digital integrated circuits.

More information

Datorstödd Elektronikkonstruktion

Datorstödd Elektronikkonstruktion Datorstödd Elektronikkonstruktion [Computer Aided Design of Electronics] Zebo Peng, Petru Eles and Gert Jervan Embedded Systems Laboratory IDA, Linköping University http://www.ida.liu.se/~tdts80/~tdts80

More information

Lecture 33 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 30, 2007

Lecture 33 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 30, 2007 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 33-1 Lecture 33 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 30, 2007 Contents: 1. MOSFET scaling

More information

Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI

Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI 1 Integrated diodes pn junctions of transistor structures can be used as integrated diodes. The choice of the junction is limited by the considerations of switching speed and breakdown voltage. The forward

More information

Introduction to Digital Logic Missouri S&T University CPE 2210 Electric Circuits

Introduction to Digital Logic Missouri S&T University CPE 2210 Electric Circuits Introduction to Digital Logic Missouri S&T University CPE 2210 Electric Circuits Egemen K. Çetinkaya Egemen K. Çetinkaya Department of Electrical & Computer Engineering Missouri University of Science and

More information

EE 230. Electronic Circuits and Systems. Randy Geiger 2133 Coover

EE 230. Electronic Circuits and Systems. Randy Geiger 2133 Coover EE 230 Electronic Circuits and Systems Randy Geiger 2133 Coover rlgeiger@iastate.edu 294-7745 Course Description Linear Systems Frequency domain characterization of electronic circuits and systems transfer

More information

EE4800 CMOS Digital IC Design & Analysis. Lecture 1 Introduction Zhuo Feng

EE4800 CMOS Digital IC Design & Analysis. Lecture 1 Introduction Zhuo Feng EE4800 CMOS Digital IC Design & Analysis Lecture 1 Introduction Zhuo Feng 1.1 Prof. Zhuo Feng Office: EERC 730 Phone: 487-3116 Email: zhuofeng@mtu.edu Class Website http://www.ece.mtu.edu/~zhuofeng/ee4800fall2010.html

More information

EE105 Fall 2015 Microelectronic Devices and Circuits. Invention of Transistors

EE105 Fall 2015 Microelectronic Devices and Circuits. Invention of Transistors EE105 Fall 2015 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 1-1 Invention of Transistors - 1947 Bardeen, Shockley, and Brattain at Bell Labs Invented

More information

ENG2410 Digital Design CMOS Technology. Fall 2017 S. Areibi School of Engineering University of Guelph

ENG2410 Digital Design CMOS Technology. Fall 2017 S. Areibi School of Engineering University of Guelph ENG2410 Digital Design CMOS Technology Fall 2017 S. reibi School of Engineering University of Guelph The Transistor Revolution First transistor Bell Labs, 1948 Bipolar logic 1960 s Intel 4004 processor

More information

Lecture 26 Differential Amplifiers (I) DIFFERENTIAL AMPLIFIERS

Lecture 26 Differential Amplifiers (I) DIFFERENTIAL AMPLIFIERS Lecture 6 Differential Amplifiers (I) DIFFERENTIAL AMPLIFIERS Outline 1. Introduction. Incremental analysis of differential amplifier 3. Common-source differential amplifier Reading Assignment: Howe and

More information

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Lecture outline Historical introduction Semiconductor devices overview Bipolar Junction Transistor (BJT) Field

More information

Assoc. Prof. Dr. MONTREE SIRIPRUCHYANUN

Assoc. Prof. Dr. MONTREE SIRIPRUCHYANUN 1 Assoc. Prof. Dr. MONTREE SIRIPRUCHYANUN Dept. of Teacher Training in Electrical Engineering 1 King Mongkut s Institute of Technology North Bangkok 1929 Bulky, expensive and required high supply voltages.

More information

Introduction to VLSI ASIC Design and Technology

Introduction to VLSI ASIC Design and Technology Introduction to VLSI ASIC Design and Technology Paulo Moreira CERN - Geneva, Switzerland Paulo Moreira Introduction 1 Outline Introduction Is there a limit? Transistors CMOS building blocks Parasitics

More information

Lecture 0: Introduction

Lecture 0: Introduction Lecture 0: Introduction Introduction Integrated circuits: many transistors on one chip. Very Large Scale Integration (VLSI): bucketloads! Complementary Metal Oxide Semiconductor Fast, cheap, low power

More information

Lecture 1, Introduction and Background

Lecture 1, Introduction and Background EE 338L CMOS Analog Integrated Circuit Design Lecture 1, Introduction and Background With the advances of VLSI (very large scale integration) technology, digital signal processing is proliferating and

More information

1 Introduction 1.1 HISTORICAL DEVELOPMENT OF MICROELECTRONICS

1 Introduction 1.1 HISTORICAL DEVELOPMENT OF MICROELECTRONICS 1 Introduction 1.1 HISTORICAL DEVELOPMENT OF MICROELECTRONICS The field of microelectronics began in 1948 when the first transistor was invented. This first transistor was a point-contact transistor, which

More information

Trends and Challenges in VLSI Technology Scaling Towards 100nm

Trends and Challenges in VLSI Technology Scaling Towards 100nm Trends and Challenges in VLSI Technology Scaling Towards 100nm Stefan Rusu Intel Corporation stefan.rusu@intel.com September 2001 Stefan Rusu 9/2001 2001 Intel Corp. Page 1 Agenda VLSI Technology Trends

More information

ISSCC 2003 / SESSION 1 / PLENARY / 1.1

ISSCC 2003 / SESSION 1 / PLENARY / 1.1 ISSCC 2003 / SESSION 1 / PLENARY / 1.1 1.1 No Exponential is Forever: But Forever Can Be Delayed! Gordon E. Moore Intel Corporation Over the last fifty years, the solid-state-circuits industry has grown

More information

420 Intro to VLSI Design

420 Intro to VLSI Design Dept of Electrical and Computer Engineering 420 Intro to VLSI Design Lecture 0: Course Introduction and Overview Valencia M. Joyner Spring 2005 Getting Started Syllabus About the Instructor Labs, Problem

More information

Integrated Circuit Amplifiers. Comparison of MOSFETs and BJTs

Integrated Circuit Amplifiers. Comparison of MOSFETs and BJTs Integrated Circuit Amplifiers Comparison of MOSFETs and BJTs 17 Typical CMOS Device Parameters 0.8 µm 0.25 µm 0.13 µm Parameter NMOS PMOS NMOS PMOS NMOS PMOS t ox (nm) 15 15 6 6 2.7 2.7 C ox (ff/µm 2 )

More information

Introduction to Electronic Devices

Introduction to Electronic Devices (Course Number 300331 ) Fall 2006 Dr. Dietmar Knipp Assistant Professor of Electrical Engineering Information: http://www.faculty.iubremen.de/dknipp/ Source: Apple Ref.: Apple Ref.: IBM Critical 10-8 10-7

More information

EE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02

EE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02 EE 5611 Introduction to Microelectronic Technologies Fall 2014 Thursday, September 04, 2014 Lecture 02 1 Lecture Outline Review on semiconductor materials Review on microelectronic devices Example of microelectronic

More information

Introduction. Reading: Chapter 1. Courtesy of Dr. Dansereau, Dr. Brown, Dr. Vranesic, Dr. Harris, and Dr. Choi.

Introduction. Reading: Chapter 1. Courtesy of Dr. Dansereau, Dr. Brown, Dr. Vranesic, Dr. Harris, and Dr. Choi. Introduction Reading: Chapter 1 Courtesy of Dr. Dansereau, Dr. Brown, Dr. Vranesic, Dr. Harris, and Dr. Choi http://csce.uark.edu +1 (479) 575-6043 yrpeng@uark.edu Why study logic design? Obvious reasons

More information

Lecture 9 Transistors

Lecture 9 Transistors Lecture 9 Transistors Physics Transistor/transistor logic CMOS logic CA 1947 http://www.extremetech.com/extreme/164301-graphenetransistors-based-on-negative-resistance-could-spell-theend-of-silicon-and-semiconductors

More information

Power Electronics. Contents

Power Electronics. Contents Power Electronics Overview Contents Electronic Devices Power, Electric, Magnetic circuits Rectifiers (1-ph, 3-ph) Converters, controlled rectifiers Inverters (1-ph, 3-ph) Power system harmonics Choppers

More information

CS302 - Digital Logic Design Glossary By

CS302 - Digital Logic Design Glossary By CS302 - Digital Logic Design Glossary By ABEL : Advanced Boolean Expression Language; a software compiler language for SPLD programming; a type of hardware description language (HDL) Adder : A digital

More information

BiCMOS Circuit Design

BiCMOS Circuit Design BiCMOS Circuit Design 1. Introduction to BiCMOS 2. Process, Device, and Modeling 3. BiCMOS Digital Circuit Design 4. BiCMOS Analog Circuit Design 5. BiCMOS Subsystems and Practical Considerations Tai-Haur

More information

LOGIC FAMILY LOGIC FAMILY

LOGIC FAMILY LOGIC FAMILY In computer engineering, a logic family may refer to one of two related concepts. A logic family of monolithic digital integrated circuit devices is a group of electronic logic gates constructed using

More information

Computer Architecture (TT 2012)

Computer Architecture (TT 2012) Computer Architecture (TT 212) Laws of Attraction aniel Kroening Oxford University, Computer Science epartment Version 1., 212 . Kroening: Computer Architecture (TT 212) 2 . Kroening: Computer Architecture

More information

ET475 Electronic Circuit Design I [Onsite]

ET475 Electronic Circuit Design I [Onsite] ET475 Electronic Circuit Design I [Onsite] Course Description: This course covers the analysis and design of electronic circuits, and includes a laboratory that utilizes computer-aided software tools for

More information

Neuromorphic Analog VLSI

Neuromorphic Analog VLSI Neuromorphic Analog VLSI David W. Graham West Virginia University Lane Department of Computer Science and Electrical Engineering 1 Neuromorphic Analog VLSI Each word has meaning Neuromorphic Analog VLSI

More information

Lecture Notes 5 CMOS Image Sensor Device and Fabrication

Lecture Notes 5 CMOS Image Sensor Device and Fabrication Lecture Notes 5 CMOS Image Sensor Device and Fabrication CMOS image sensor fabrication technologies Pixel design and layout Imaging performance enhancement techniques Technology scaling, industry trends

More information

Preface to Third Edition Deep Submicron Digital IC Design p. 1 Introduction p. 1 Brief History of IC Industry p. 3 Review of Digital Logic Gate

Preface to Third Edition Deep Submicron Digital IC Design p. 1 Introduction p. 1 Brief History of IC Industry p. 3 Review of Digital Logic Gate Preface to Third Edition p. xiii Deep Submicron Digital IC Design p. 1 Introduction p. 1 Brief History of IC Industry p. 3 Review of Digital Logic Gate Design p. 6 Basic Logic Functions p. 6 Implementation

More information

Lecture 1 Introduction to Solid State Electronics

Lecture 1 Introduction to Solid State Electronics EE 471: Transport Phenomena in Solid State Devices Spring 2018 Lecture 1 Introduction to Solid State Electronics Bryan Ackland Department of Electrical and Computer Engineering Stevens Institute of Technology

More information

Transistor Digital Circuits

Transistor Digital Circuits Transistor Digital Circuits Switching Transistor Model (on) (on) T n T p Controlled switch model v CT > V CTex ; T- (on); i O > 0; v O 0 v CT < V Thn ; T- (off); i O = 0; v O = V PS v CT > V Thp ; T- (off);

More information

Low-Power VLSI. Seong-Ook Jung VLSI SYSTEM LAB, YONSEI University School of Electrical & Electronic Engineering

Low-Power VLSI. Seong-Ook Jung VLSI SYSTEM LAB, YONSEI University School of Electrical & Electronic Engineering Low-Power VLSI Seong-Ook Jung 2013. 5. 27. sjung@yonsei.ac.kr VLSI SYSTEM LAB, YONSEI University School of Electrical & Electronic Engineering Contents 1. Introduction 2. Power classification & Power performance

More information

6. Field-Effect Transistor

6. Field-Effect Transistor 6. Outline: Introduction to three types of FET: JFET MOSFET & CMOS MESFET Constructions, Characteristics & Transfer curves of: JFET & MOSFET Introduction The field-effect transistor (FET) is a threeterminal

More information

Intel s High-k/Metal Gate Announcement. November 4th, 2003

Intel s High-k/Metal Gate Announcement. November 4th, 2003 Intel s High-k/Metal Gate Announcement November 4th, 2003 1 What are we announcing? Intel has made significant progress in future transistor materials Two key parts of this new transistor are: The gate

More information

450mm and Moore s Law Advanced Packaging Challenges and the Impact of 3D

450mm and Moore s Law Advanced Packaging Challenges and the Impact of 3D 450mm and Moore s Law Advanced Packaging Challenges and the Impact of 3D Doug Anberg VP, Technical Marketing Ultratech SOKUDO Lithography Breakfast Forum July 10, 2013 Agenda Next Generation Technology

More information

Lecture #29. Moore s Law

Lecture #29. Moore s Law Lecture #29 ANNOUNCEMENTS HW#15 will be for extra credit Quiz #6 (Thursday 5/8) will include MOSFET C-V No late Projects will be accepted after Thursday 5/8 The last Coffee Hour will be held this Thursday

More information

A New Self-aligned Quantum-Well MOSFET Architecture Fabricated by a Scalable Tight-Pitch Process

A New Self-aligned Quantum-Well MOSFET Architecture Fabricated by a Scalable Tight-Pitch Process A New Self-aligned Quantum-Well MOSFET Architecture Fabricated by a Scalable Tight-Pitch Process Jianqiang Lin, Xin Zhao, Tao Yu, Dimitri A. Antoniadis, and Jesús A. del Alamo Microsystems Technology Laboratories,

More information

INTRODUCTION TO DIGITAL CONCEPT

INTRODUCTION TO DIGITAL CONCEPT COURSE / CODE DIGITAL SYSTEM FUNDAMENTALS (ECE 421) DIGITAL ELECTRONICS FUNDAMENTAL (ECE 422) INTRODUCTION TO DIGITAL CONCEPT Digital and Analog Quantities Digital relates to data in the form of digits,

More information

1 Digital EE141 Integrated Circuits 2nd Introduction

1 Digital EE141 Integrated Circuits 2nd Introduction Digital Integrated Circuits Introduction 1 What is this lecture about? Introduction to digital integrated circuits + low power circuits Issues in digital design The CMOS inverter Combinational logic structures

More information

Advanced Digital Integrated Circuits. Lecture 2: Scaling Trends. Announcements. No office hour next Monday. Extra office hour Tuesday 2-3pm

Advanced Digital Integrated Circuits. Lecture 2: Scaling Trends. Announcements. No office hour next Monday. Extra office hour Tuesday 2-3pm EE241 - Spring 20 Advanced Digital Integrated Circuits Lecture 2: Scaling Trends and Features of Modern Technologies Announcements No office hour next Monday Extra office hour Tuesday 2-3pm 2 1 Outline

More information

VLSI Design. Introduction

VLSI Design. Introduction VLSI Design Introduction Outline Introduction Silicon, pn-junctions and transistors A Brief History Operation of MOS Transistors CMOS circuits Fabrication steps for CMOS circuits Introduction Integrated

More information

CS/EE 181a 2010/11 Lecture 1

CS/EE 181a 2010/11 Lecture 1 CS/EE 181a 2010/11 Lecture 1 CS/EE 181 is about designing digital CMOS systems. Functional Specification Approximate domain of CS181 Circuit Specification Simulation Architectural Specification Abstract

More information

Manufacturer Part Number. Module 4: CMOS SRAM Analysis

Manufacturer Part Number. Module 4: CMOS SRAM Analysis Manufacturer Part Number description Module 4: CMOS SRAM Analysis Manufacturer Device # 2 Some of the information is this report may be covered by patents, mask and/or copyright protection. This report

More information

TRANSISTOR TRANSISTOR

TRANSISTOR TRANSISTOR It is made up of semiconductor material such as Si and Ge. Usually, it comprises of three terminals namely, base, emitter and collector for providing connection to the external circuit. Today, some transistors

More information

Intel's 65 nm Logic Technology Demonstrated on 0.57 µm 2 SRAM Cells

Intel's 65 nm Logic Technology Demonstrated on 0.57 µm 2 SRAM Cells Intel's 65 nm Logic Technology Demonstrated on 0.57 µm 2 SRAM Cells Mark Bohr Intel Senior Fellow Director of Process Architecture & Integration Intel 1 What are We Announcing? Intel has fabricated fully-functional

More information

EECS150 - Digital Design Lecture 2 - CMOS

EECS150 - Digital Design Lecture 2 - CMOS EECS150 - Digital Design Lecture 2 - CMOS August 29, 2002 John Wawrzynek Fall 2002 EECS150 - Lec02-CMOS Page 1 Outline Overview of Physical Implementations CMOS devices Announcements/Break CMOS transistor

More information

Transistor Characteristics

Transistor Characteristics Transistor Characteristics Introduction Transistors are the most recent additions to a family of electronic current flow control devices. They differ from diodes in that the level of current that can flow

More information

Selected Topics in Nanoelectronics. Danny Porath 2002

Selected Topics in Nanoelectronics. Danny Porath 2002 Selected Topics in Nanoelectronics Danny Porath 2002 Links to NST http://www.foresight.org/ http://itri.loyola.edu/nanobase/ http://www.zyvex.com/nano/ http://www.nano.gov/ http://www.aeiveos.com/nanotech/

More information

Design cycle for MEMS

Design cycle for MEMS Design cycle for MEMS Design cycle for ICs IC Process Selection nmos CMOS BiCMOS ECL for logic for I/O and driver circuit for critical high speed parts of the system The Real Estate of a Wafer MOS Transistor

More information

EECS150 - Digital Design Lecture 15 - CMOS Implementation Technologies. Overview of Physical Implementations

EECS150 - Digital Design Lecture 15 - CMOS Implementation Technologies. Overview of Physical Implementations EECS150 - Digital Design Lecture 15 - CMOS Implementation Technologies Mar 12, 2013 John Wawrzynek Spring 2013 EECS150 - Lec15-CMOS Page 1 Overview of Physical Implementations Integrated Circuits (ICs)

More information

EECS150 - Digital Design Lecture 9 - CMOS Implementation Technologies

EECS150 - Digital Design Lecture 9 - CMOS Implementation Technologies EECS150 - Digital Design Lecture 9 - CMOS Implementation Technologies Feb 14, 2012 John Wawrzynek Spring 2012 EECS150 - Lec09-CMOS Page 1 Overview of Physical Implementations Integrated Circuits (ICs)

More information

Digital Design and System Implementation. Overview of Physical Implementations

Digital Design and System Implementation. Overview of Physical Implementations Digital Design and System Implementation Overview of Physical Implementations CMOS devices CMOS transistor circuit functional behavior Basic logic gates Transmission gates Tri-state buffers Flip-flops

More information

Second-Generation PDP Address Driver IC

Second-Generation PDP Address Driver IC Second-Generation PDP Address Driver IC Seiji Noguchi Hitoshi Sumida Kazuhiro Kawamura 1. Introduction Fig.1 Overview of the process flow Color PDPs (plasma display panels) are used in household TV sets

More information

Module 2: CMOS FEOL Analysis

Module 2: CMOS FEOL Analysis Module 2: CMOS FEOL Analysis Manufacturer Device # 2 About Chipworks Chipworks is the recognized leader in reverse engineering and patent infringement analysis of semiconductors and electronic systems.

More information

Practical Information

Practical Information EE241 - Spring 2013 Advanced Digital Integrated Circuits MW 2-3:30pm 540A/B Cory Practical Information Instructor: Borivoje Nikolić 509 Cory Hall, 3-9297, bora@eecs Office hours: M 11-12, W 3:30pm-4:30pm

More information

MEMS in ECE at CMU. Gary K. Fedder

MEMS in ECE at CMU. Gary K. Fedder MEMS in ECE at CMU Gary K. Fedder Department of Electrical and Computer Engineering and The Robotics Institute Carnegie Mellon University Pittsburgh, PA 15213-3890 fedder@ece.cmu.edu http://www.ece.cmu.edu/~mems

More information

Basic Functional Analysis. Sample Report Richmond Road, Suite 500, Ottawa, ON K2H 5B7 Canada Tel:

Basic Functional Analysis. Sample Report Richmond Road, Suite 500, Ottawa, ON K2H 5B7 Canada Tel: Basic Functional Analysis Sample Report 3685 Richmond Road, Suite 500, Ottawa, ON K2H 5B7 Canada Tel: 613-829-0414 www.chipworks.com Basic Functional Analysis Sample Report Some of the information in this

More information

ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha

ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor

More information

Course Outcome of M.Tech (VLSI Design)

Course Outcome of M.Tech (VLSI Design) Course Outcome of M.Tech (VLSI Design) PVL108: Device Physics and Technology The students are able to: 1. Understand the basic physics of semiconductor devices and the basics theory of PN junction. 2.

More information

Variation-Aware Design for Nanometer Generation LSI

Variation-Aware Design for Nanometer Generation LSI HIRATA Morihisa, SHIMIZU Takashi, YAMADA Kenta Abstract Advancement in the microfabrication of semiconductor chips has made the variations and layout-dependent fluctuations of transistor characteristics

More information

Introduction to deep-submicron CMOS circuit design

Introduction to deep-submicron CMOS circuit design National Institute of Applied Sciences Department of Electrical & Computer Engineering Introduction to deep-submicron CMOS circuit design Etienne Sicard http:\\intrage.insa-tlse.fr\~etienne 1 08/09/00

More information

FUNDAMENTALS OF MODERN VLSI DEVICES

FUNDAMENTALS OF MODERN VLSI DEVICES 19-13- FUNDAMENTALS OF MODERN VLSI DEVICES YUAN TAUR TAK H. MING CAMBRIDGE UNIVERSITY PRESS Physical Constants and Unit Conversions List of Symbols Preface page xi xiii xxi 1 INTRODUCTION I 1.1 Evolution

More information

Design Simulation and Analysis of NMOS Characteristics for Varying Oxide Thickness

Design Simulation and Analysis of NMOS Characteristics for Varying Oxide Thickness MIT International Journal of Electronics and Communication Engineering, Vol. 4, No. 2, August 2014, pp. 81 85 81 Design Simulation and Analysis of NMOS Characteristics for Varying Oxide Thickness Alpana

More information

INTRODUCTION: Basic operating principle of a MOSFET:

INTRODUCTION: Basic operating principle of a MOSFET: INTRODUCTION: Along with the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying

More information

Lahore University of Management Sciences. EE 340 Devices and Electronics. Fall Dr. Tehseen Zahra Raza. Instructor

Lahore University of Management Sciences. EE 340 Devices and Electronics. Fall Dr. Tehseen Zahra Raza. Instructor EE 340 Devices and Electronics Fall 2014-15 Instructor Dr. Tehseen Zahra Raza Room No. SSE L-301 Office Hours TBA Email tehseen.raza@lums.edu.pk Telephone 3522 Secretary/TA TBA TA Office Hours TBA Course

More information

Silicon VLSI Technology. Fundamentals, Practice and Modeling. Class Notes For Instructors. J. D. Plummer, M. D. Deal and P. B.

Silicon VLSI Technology. Fundamentals, Practice and Modeling. Class Notes For Instructors. J. D. Plummer, M. D. Deal and P. B. Silicon VLSI Technology Fundamentals, ractice, and Modeling Class otes For Instructors J. D. lummer, M. D. Deal and. B. Griffin These notes are intended to be used for lectures based on the above text.

More information

Lecture: Integration of silicon photonics with electronics. Prepared by Jean-Marc FEDELI CEA-LETI

Lecture: Integration of silicon photonics with electronics. Prepared by Jean-Marc FEDELI CEA-LETI Lecture: Integration of silicon photonics with electronics Prepared by Jean-Marc FEDELI CEA-LETI Context The goal is to give optical functionalities to electronics integrated circuit (EIC) The objectives

More information

CMOS Digital Logic Design with Verilog. Chapter1 Digital IC Design &Technology

CMOS Digital Logic Design with Verilog. Chapter1 Digital IC Design &Technology CMOS Digital Logic Design with Verilog Chapter1 Digital IC Design &Technology Chapter Overview: In this chapter we study the concept of digital hardware design & technology. This chapter deals the standard

More information

EECS130 Integrated Circuit Devices

EECS130 Integrated Circuit Devices EECS130 Integrated Circuit Devices Professor Ali Javey 11/6/2007 MOSFETs Lecture 6 BJTs- Lecture 1 Reading Assignment: Chapter 10 More Scalable Device Structures Vertical Scaling is important. For example,

More information

DESIGN OF A NOVEL CURRENT MIRROR BASED DIFFERENTIAL AMPLIFIER DESIGN WITH LATCH NETWORK. Thota Keerthi* 1, Ch. Anil Kumar 2

DESIGN OF A NOVEL CURRENT MIRROR BASED DIFFERENTIAL AMPLIFIER DESIGN WITH LATCH NETWORK. Thota Keerthi* 1, Ch. Anil Kumar 2 ISSN 2277-2685 IJESR/October 2014/ Vol-4/Issue-10/682-687 Thota Keerthi et al./ International Journal of Engineering & Science Research DESIGN OF A NOVEL CURRENT MIRROR BASED DIFFERENTIAL AMPLIFIER DESIGN

More information

Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, Digital EE141 Integrated Circuits 2nd Introduction

Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic. July 30, Digital EE141 Integrated Circuits 2nd Introduction Digital Integrated Circuits A Design Perspective Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolic Introduction July 30, 2002 1 What is this book all about? Introduction to digital integrated circuits.

More information

Analog and Telecommunication Electronics

Analog and Telecommunication Electronics Politecnico di Torino - ICT School Analog and Telecommunication Electronics F2 Active power devices»mos»bjt» IGBT, TRIAC» Safe Operating Area» Thermal analysis 30/05/2012-1 ATLCE - F2-2011 DDC Lesson F2:

More information

INTRODUCTION TO MOS TECHNOLOGY

INTRODUCTION TO MOS TECHNOLOGY INTRODUCTION TO MOS TECHNOLOGY 1. The MOS transistor The most basic element in the design of a large scale integrated circuit is the transistor. For the processes we will discuss, the type of transistor

More information

Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Computing Layers

Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Computing Layers Chapter 3 Digital Logic Structures Original slides from Gregory Byrd, North Carolina State University Modified by Chris Wilcox, Sanjay Rajopadhye Colorado State University Computing Layers Problems Algorithms

More information

A Brief Introduction to Single Electron Transistors. December 18, 2011

A Brief Introduction to Single Electron Transistors. December 18, 2011 A Brief Introduction to Single Electron Transistors Diogo AGUIAM OBRECZÁN Vince December 18, 2011 1 Abstract Transistor integration has come a long way since Moore s Law was first mentioned and current

More information

EE 410: Integrated Circuit Fabrication Laboratory

EE 410: Integrated Circuit Fabrication Laboratory EE 410: Integrated Circuit Fabrication Laboratory 1 EE 410: Integrated Circuit Fabrication Laboratory Web Site: Instructor: http://www.stanford.edu/class/ee410 https://ccnet.stanford.edu/ee410/ (on CCNET)

More information

Low Transistor Variability The Key to Energy Efficient ICs

Low Transistor Variability The Key to Energy Efficient ICs Low Transistor Variability The Key to Energy Efficient ICs 2 nd Berkeley Symposium on Energy Efficient Electronic Systems 11/3/11 Robert Rogenmoser, PhD 1 BEES_roro_G_111103 Copyright 2011 SuVolta, Inc.

More information

2.8 - CMOS TECHNOLOGY

2.8 - CMOS TECHNOLOGY CMOS Technology (6/7/00) Page 1 2.8 - CMOS TECHNOLOGY INTRODUCTION Objective The objective of this presentation is: 1.) Illustrate the fabrication sequence for a typical MOS transistor 2.) Show the physical

More information