Lahore University of Management Sciences. EE 340 Devices and Electronics. Fall Dr. Tehseen Zahra Raza. Instructor

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1 EE 340 Devices and Electronics Fall Instructor Dr. Tehseen Zahra Raza Room No. SSE L-301 Office Hours TBA Telephone 3522 Secretary/TA TBA TA Office Hours TBA Course URL (if any) Lms/zambeel Course Basics Credit Hours 4 Lecture(s) Nbr of Lec(s) Per Week 2 Duration 75 minutes each Recitation/Lab (per week) Nbr of Lec(s) Per Week 1 Duration 3 hours Tutorial (per week) Nbr of Lec(s) Per Week Duration Course Distribution Core Elective Open for Student Category Close for Student Category Core course for Electrical Engineering Majors COURSE DESCRIPTION This course lays the foundations for the design of electronic systems for various applications. The fundamentals of device physics are discussed laying the foundation to understand the operation of diodes, bipolar junction transistors and field effect transistors. It will cover topics on modeling microelectronic devices, circuit analysis and design. The course will develop and use large-signal techniques to analyze and design BJT and FET circuits including an overview of multistage amplifiers. Finally the small-signal behavior of BJT and FET is studied along with appropriate

2 mathematical models. COURSE PREREQUISITE(S) EE240: Circuits 1 EE242: Circuits 2 COURSE OBJECTIVES To overview the fundamentals of semiconductor physics and devices; PN junction diode, MOSFET and BJT. To develop skills needed for analysis and design of electronic systems using these components. Learning Outcomes Grading Breakup and Policy

3 This grading policy istentative. Quiz(s): Quizzes 20% Assignment(s): 5% Labs and Final Project: 5% + 5% Midterm Examination: 25% Final Examination: 40% Assignment(s): 2 Quiz(s): 4-5 Class Participation: Class participation is encouraged Attendance: Attendance is not compulsory but participation and punctuality is expected Midterm Examination: One Project: One end term Project Final Examination: Comprehensive Examination Detail Yes/No: Yes Midterm Exam Combine Separate: Combine Duration: 60 mins Preferred Date: TBA Exam Specifications:

4 Yes/No: Yes Final Exam Combine Separate: Cumulative Duration: Exam Specifications: COURSE OVERVIEW Week/ Lecture/ Module Topics Objectives/ Application Semiconductors General Introduction NO LAB Carrier modeling energy bands and band gaps Session 1 LAB 1 Diode Characteristics Density of States, Fermi Energy Doping/carrier concentration

5 PN Junction structure and electrostatics Session 2 LAB 1 Diode Characteristics PN Junction I-V characteristics I-V characteristics, Small signal admittance Session 3 LAB 2 Diode Applications Diode circuits models and applications Diode circuits models and applications Session 4 LAB 2 Diode Applications Diode circuits analysis and applications MOSFET- Introduction, Structure and device operation, models Session 5 Lab 3 Characteristics of MOSFET MOSFET- Introduction, Structure and device operation, models Session 6 Lab 4 MOSFET as an amplifier MOSFET Biasing and DC analysis Session 7 Lab 4 MOSFET as an amplifier Midterm

6 MOSFET Biasing and DC analysis MOSFET Small signal models and analysis Session 8 Lab 5 Common Gate and Common Drain Amplifiers MOSFET Amplifier configurations MOSFET Amplifier characteristics Session 9 Lab 6 Frequency Response of Common Source Amplifier Transistor Switch and Inverter Session 10 Lab 7 CMOS Digital Logic Inverter Current Mirror configurations BJT Structure and device operation, models Session 11 Lab 8 Switching Circuits and Timers Session 12 : FINAL PROJECT BJT Structure and device operation, models BJT Biasing and DC analysis

7 Session 13 : FINAL PROJECT BJT Small signal models and analysis BJT Amplifier configurations and analysis Sesison 14 : FINAL PROJECT Textbook(s)/Supplementary Readings TEXTBOOKS Microelectronic Circuits by Sedra and Smith, 6 th Edition, Oxford University Press, 2010 SUPPLEMENTARY READING Semiconductor Device Fundamentals by Robert Pierret, Addison Wesley, 1996 Fundamentals of Microelectronics by Behzad Razavi, Wiley, Introduction to Solid State Physics by Charles Kittel, 7 th Edition, Wiley. Description of Laboratory Exercises Following are the labs that will be conducted during this course. Handouts of actual lab to be conducted will be provided in the preceding week. Session 1: Diode characteristics of pn junction diode, LED and zener diode To understand the characteristics of various semiconductor diodes and the parameters used to model their behavior. In this lab characteristics of a pn junction diode, LED and zener diode are studied. Session 2: Junction capacitance and opto-coupling of LED

8 This lab is the continuation of Session 1. The junction capacitance and opto-coupling of LED is studied. Session 3:Diode applications I Session 4: Diode applications II This lab comprises of two sessions to study various applications of diodes. The following circuits will be studied in Session 3 and Session 4. Use of diode as a half-wave and full-wave rectifier ripple reduction with capacitor filter regulation using a zener diode, clamping circuit voltage multipliers Session 5: Lab No. 3: MOSFET Characteristics Characteristics of a MOSFET device and understanding the parameters used to model its behavior. Session 6: Transistor as an amplifier I Session 7: Transistor as an amplifier II Biasing schemes and amplification characteristics of a single stage common source MOSFET amplifier will be considered in Session 6 and Session 7 Session 8: Common Drain and Common Gate Amplifiers Biasing and amplification characteristics of a common gate and common drain MOSFET amplifiers Session 9: Frequency Response of MOSFET amplifier High frequency and low frequency response of a common source MOSFET amplifier Session 10: CMOS Digital Logic Inverter Voltage transfer characteristics and dynamic operation of CMOS digital logic inverter Session 11: Switching Circuits and Timers Design and working of discrete component multi-vibrators with BJTs and applications of 555 timer Sessions 12 14: Final Project: Group project (4 members maximum)

9 Proposal to be submitted in week 10.