Semiconductor Devices
|
|
|
- Cameron McGee
- 5 years ago
- Views:
Transcription
1 Semiconductor Devices Topics and References M. B. Patil Department of Electrical Engineering Indian Institute of Technology Bombay
2 Course contents * Carrier statistics and transport
3 Course contents * Carrier statistics and transport * p-n junction diodes: I -V curve
4 Course contents * Carrier statistics and transport * p-n junction diodes: I -V curve * p-n junction diodes: AC and transient conditions
5 Course contents * Carrier statistics and transport * p-n junction diodes: I -V curve * p-n junction diodes: AC and transient conditions * Diode circuits
6 Course contents * Carrier statistics and transport * p-n junction diodes: I -V curve * p-n junction diodes: AC and transient conditions * Diode circuits * Bipolar junction transistors
7 Course contents * Carrier statistics and transport * p-n junction diodes: I -V curve * p-n junction diodes: AC and transient conditions * Diode circuits * Bipolar junction transistors * BJT amplifiers
8 Course contents * Carrier statistics and transport * p-n junction diodes: I -V curve * p-n junction diodes: AC and transient conditions * Diode circuits * Bipolar junction transistors * BJT amplifiers * Junction field-effect transistors
9 Course contents * Carrier statistics and transport * p-n junction diodes: I -V curve * p-n junction diodes: AC and transient conditions * Diode circuits * Bipolar junction transistors * BJT amplifiers * Junction field-effect transistors * MOS capacitor
10 Course contents * Carrier statistics and transport * p-n junction diodes: I -V curve * p-n junction diodes: AC and transient conditions * Diode circuits * Bipolar junction transistors * BJT amplifiers * Junction field-effect transistors * MOS capacitor * MOS transistor
11 References
12 References * R.T. Howe and C.G. Sodini, Microelectronics: An Integrated Approach. New Delhi: Prentice-Hall International, 1997.
13 References * R.T. Howe and C.G. Sodini, Microelectronics: An Integrated Approach. New Delhi: Prentice-Hall International, * K. Kano, Semiconductor Devices. New Delhi: Pearson Education, 1998.
14 References * R.T. Howe and C.G. Sodini, Microelectronics: An Integrated Approach. New Delhi: Prentice-Hall International, * K. Kano, Semiconductor Devices. New Delhi: Pearson Education, * D.A. Neamen, Semiconductor Physics and Devices. New Delhi: Tata McGraw-Hill, 2005.
15 References * R.T. Howe and C.G. Sodini, Microelectronics: An Integrated Approach. New Delhi: Prentice-Hall International, * K. Kano, Semiconductor Devices. New Delhi: Pearson Education, * D.A. Neamen, Semiconductor Physics and Devices. New Delhi: Tata McGraw-Hill, * M. B. Patil, Basic electronic devices and circuits. New Delhi: Prentice-Hall India, 2013.
16 References * R.T. Howe and C.G. Sodini, Microelectronics: An Integrated Approach. New Delhi: Prentice-Hall International, * K. Kano, Semiconductor Devices. New Delhi: Pearson Education, * D.A. Neamen, Semiconductor Physics and Devices. New Delhi: Tata McGraw-Hill, * M. B. Patil, Basic electronic devices and circuits. New Delhi: Prentice-Hall India, * R.F. Pierret, Semiconductor Device Fundamentals. New Delhi: Pearson Education, 1996.
17 References * R.T. Howe and C.G. Sodini, Microelectronics: An Integrated Approach. New Delhi: Prentice-Hall International, * K. Kano, Semiconductor Devices. New Delhi: Pearson Education, * D.A. Neamen, Semiconductor Physics and Devices. New Delhi: Tata McGraw-Hill, * M. B. Patil, Basic electronic devices and circuits. New Delhi: Prentice-Hall India, * R.F. Pierret, Semiconductor Device Fundamentals. New Delhi: Pearson Education, * A.S. Sedra, K.C. Smith, and A.N. Chandorkar, Microelectronic Circuits Theory and Applications. New Delhi: Oxford University Press, 2009.
18 References * R.T. Howe and C.G. Sodini, Microelectronics: An Integrated Approach. New Delhi: Prentice-Hall International, * K. Kano, Semiconductor Devices. New Delhi: Pearson Education, * D.A. Neamen, Semiconductor Physics and Devices. New Delhi: Tata McGraw-Hill, * M. B. Patil, Basic electronic devices and circuits. New Delhi: Prentice-Hall India, * R.F. Pierret, Semiconductor Device Fundamentals. New Delhi: Pearson Education, * A.S. Sedra, K.C. Smith, and A.N. Chandorkar, Microelectronic Circuits Theory and Applications. New Delhi: Oxford University Press, * B.G. Streetman and S.K. Banerjee, Solid State Electronic Devices. New Delhi: Pearson Education, 2006.
ECE1001 Fundamentals of Electrical Circuits L,T,P,J,C Pre-Req :NIL 2, 0, 2,0,3 Lecture Mod ules
ECE1001 Fundamentals of Electrical Circuits L,T,P,J,C Pre-Req :NIL 2, 0, 2,0,3 Topics L Hrs SLO 1 DC Circuit analysis: Terminologies, Ohms law, Kirchhoff s laws, Series- parallel circuits, voltage & current
Instructor: Aaron T. Ohta Office Hours: Mon 3:30 to 4:30 pm
EE 323 Microelectronic Circuits I Lecture: MWF 2:30 to 3:20 pm, POST 127 Labs: Section 1 Tue 9:00 to 11:50 am, Holmes 358 Section 2 Thur 9:00 to 11:50 am, Holmes 358 Section 3 Tue 1:30 to 4:20 pm, Holmes
Microelectronics Circuit Analysis and Design. Differential Amplifier Intro. Differential Amplifier Intro. 12/3/2013. In this chapter, we will:
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 11 Differential Amplifiers In this chapter, we will: Describe the characteristics and terminology of the ideal differential amplifier.
School of Engineering
Electronics (ENGR 353) Spring 2009 Bulletin Description Prerequisite: grades of C or better in Engr 205 and 206. Concurrent enrollment in Engr 301. PN diodes, BJTs, and MOSFETs. Semiconductor device basics,
Electronic Circuits. Lecturer. Schedule. Electronic Circuits. Books
Lecturer Electronic Circuits Jón Tómas Guðmundsson Jón Tómas Guðmundsson Office: Room 120, UM-SJTU JI Building Office hours: Monday and Thursday 13:15-14:15 e-mail: tumi@raunvis.hi.is tumi@raunvis.hi.is
Monolithic Amplifier Circuits
Monolithic Amplifier Circuits Analog Integrated Circuits Lecturer Jón Tómas Guðmundsson Office: Room 120, UM-SJTU JI Building Office hours: Tuesday and Friday 13:15-14:15 e-mail: tumi@raunvis.hi.is Jón
visit website regularly for updates and announcements
ESE 372: Electronics Spring 2013 Web site: www.ece.sunysb.edu/~oe/leon.html visit website regularly for updates and announcements Prerequisite: ESE 271 Corequisites: ESE 211 Text Books: A.S. Sedra, K.C.
COURSE SCHEDULE SECTION. A (Room No: TP 301) B (Room No: TP 302) Hours Timings Hours Timings. Name of the staff Sec Office Office Hours Mail ID
SRM UNIVERSITY FACULTY OF ENGINEERING AND TECHNOLOGY SCHOOL OF ELECTRONICS AND COMMUNICATION ENGINEERING DEPARTMENT OF ECE COURSE PLAN Course Code : IT0201 Course Title : Electron Devices and Circuits
Lecture 12. Bipolar Junction Transistor (BJT) BJT 1-1
Lecture 12 Bipolar Junction Transistor (BJT) BJT 1-1 Course Info Lecture hours: 4 Two Lectures weekly (Saturdays and Wednesdays) Location: K2 Time: 1:40 pm Tutorial hours: 2 One tutorial class every week
EE 502 Digital IC Design
EE 502 Digital IC Design 3-0-0 6 Basic Electrical Properties of MOS circuits: MOS transistor operation in linear and saturated regions, MOS transistor threshold voltage, MOS switch and inverter, latch-up
Lahore University of Management Sciences. EE 340 Devices and Electronics. Fall Dr. Tehseen Zahra Raza. Instructor
EE 340 Devices and Electronics Fall 2014-15 Instructor Dr. Tehseen Zahra Raza Room No. SSE L-301 Office Hours TBA Email tehseen.raza@lums.edu.pk Telephone 3522 Secretary/TA TBA TA Office Hours TBA Course
Design and study of frequency response of band pass and band reject filters using operational amplifiers
International Journal of Advanced Educational Research ISSN: 2455-6157 Impact Factor: RJIF 5.12 www.educationjournal.org Volume 2; Issue 6; November 2017; Page No. 22-26 Design and study of frequency response
Lecture 01 Operational Amplifiers Op-Amps Introduction
Lecture 01 Operational Amplifiers Op-Amps Introduction Chapter 9 Ideal Operational Amplifiers and Op-Amp Circuits Donald A. Neamen (2009). Microelectronics: Circuit Analysis and Design, 4th Edition, Mc-Graw-Hill
GOPALAN COLLEGE OF ENGINEERING AND MANAGEMENT Department of Electronics and Communication Engineering COURSE PLAN
Appendix - C GOPALAN COLLEGE OF ENGINEERING AND MANAGEMENT Department of Electronics and Communication Engineering Academic Year: 2016-17 Semester: EVEN COURSE PLAN Semester: VI Subject Code& Name: 10EC63
QE TOPICS AND REFERENCES AUTOMATIC CONTROL
QE TOPICS AND REFERENCES The student is responsible for reading the ECE document "Rules and Procedures for the Ph.D. Qualifying Examination." AUTOMATIC CONTROL AC-1 Linear Systems Modern Control Engineering,
V o2 = V c V d 2. V o1. Sensor circuit. Figure 1: Example of common-mode and difference-mode voltages. V i1 Sensor circuit V o
M.B. Patil, IIT Bombay 1 BJT Differential Amplifier Common-mode and difference-mode voltages A typical sensor circuit produces an output voltage between nodes A and B (see Fig. 1) such that V o1 = V c
PhD PRELIMINARY WRITTEN EXAMINATION READING LIST
Updated 10/18/2007 PhD PRELIMINARY WRITTEN EXAMINATION READING LIST COMMUNICATIONS Textbook example: R. Ziemer and W. Tranter, "Principles of Communications", Wiley Typically covered in a course such as
UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press
UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth
Carleton University. Faculty of Engineering and Design, Department of Electronics. ELEC 2507 Electronic - I Summer Term 2017
Carleton University Faculty of Engineering and Design, Department of Electronics Instructors: ELEC 2507 Electronic - I Summer Term 2017 Name Section Office Email Prof. Q. J. Zhang Section A 4148 ME qjz@doe.carleton.ca
EE5310: Analog Electronic Circuits EE3002: Analog Circuits
EE5310: Analog Electronic Circuits EE3002: Analog Circuits Introduction Aniruddhan S Nagendra Krishnapura https://courses.iitm.ac.in Department of Electrical Engineering Indian Institute of Technology,
Introduction to Electronic Devices
(Course Number 300331 ) Fall 2006 Dr. Dietmar Knipp Assistant Professor of Electrical Engineering Information: http://www.faculty.iubremen.de/dknipp/ Source: Apple Ref.: Apple Ref.: IBM Critical 10-8 10-7
Device Technologies. Yau - 1
Device Technologies Yau - 1 Objectives After studying the material in this chapter, you will be able to: 1. Identify differences between analog and digital devices and passive and active components. Explain
Microelectronics Circuit Analysis and Design. Interdigitated BJT: Top and Cross-Sectional Views. Power Amps 10/11/2013. In this chapter, we will:
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 8 Output Stages and Power Amplifiers In this chapter, we will: Describe the characteristics of BJT and MOSFET power transistors Define
EE5310: Analog Electronic Circuits EE3002: Analog Circuits
EE5310: Analog Electronic Circuits EE3002: Analog Circuits Introduction S. Aniruddhan https://courses.iitm.ac.in Department of Electrical Engineering Indian Institute of Technology, Madras Chennai, 600036,
ITT Technical Institute. ET1310 Solid State Devices Onsite Course SYLLABUS
ITT Technical Institute ET1310 Solid State Devices Onsite Course SYLLABUS Credit hours: 4.5 Contact/Instructional hours: 56 (34 Theory Hours, 22 Lab Hours) Prerequisite(s) and/or Corequisite(s): Prerequisites:
Introduction to Electronic Devices
Introduction to Electronic Devices (Course Number 300331) Fall 2006 Dr. Dietmar Knipp Assistant Professor of Electrical Engineering Information: http://www.faculty.iubremen.de/dknipp/ Source: Apple Ref.:
UNIVERSITY OF NAIROBI COLLEGE OF BIOLOGICAL AND PHYSICAL SCIENCES FACULTY OF SCIENCE SPH 307 INTRODUCTORY ELECTRONICS
UNIVERSITY OF NAIROBI COLLEGE OF BIOLOGICAL AND PHYSICAL SCIENCES FACULTY OF SCIENCE SPH 307 INTRODUCTORY ELECTRONICS Dr. Kenneth A. Kaduki Department of Physics University of Nairobi Reviewer: Prof. Bernard
Microelectronics Circuit Analysis And Design 4th Edition Solution Manual Neamen
Microelectronics Circuit Analysis And Design 4th Edition Solution Manual Neamen We have made it easy for you to find a PDF Ebooks without any digging. And by having access to our ebooks online or by storing
UTTARAKHAND TECHNICAL UNIVERSITY, DEHRADUN Semester-III Effective from session
UTTARAKHAND TECHNICAL UNIVERSITY, DEHRADUN Semester-III Effective from session2008-09 B. Tech. Electronics & Communication Engineering (Common to Electronics and Electronics & Telecommunication Engg.)
Lahore SSE L-301 TBA. Office TBA TBA. Hours. Credit. Duration. Core Elective COURSE DESCRIPTION. laying.
EE 340 Devices and Electronics Fall 2013 14 Instructor Room No. Office Hours Email Telephone Secretary/TA TA Office Hours Course URL (if any) Dr. Tehseen Zahra Raza SSE L-301 TBA tehseen.raza@ @lums.edu.pk
Introduction to Electronic Devices
(Course Number 300331) Fall 2006 Instructor: Dr. Dietmar Knipp Assistant Professor of Electrical Engineering Information: http://www.faculty.iubremen.de/dknipp/ Source: Apple Ref.: Apple Ref.: IBM Critical
LESSON PLAN. Chap.no. Testing. & Page. Outcome No. 1. Introduction - T1 C5,95. Understand the devices. a).an ability to 2. Field intensity - potential
EE0207 ELECTRONIC DEVICES LESSON PLAN SEMICONDUCTORS Semiconductors devices: Field intensity - potential energy - mobility - conductivity - electrons holes - charge density in semiconductors - electrical
ITT Technical Institute. ET215 Electronic Devices I Onsite Course SYLLABUS
ITT Technical Institute ET215 Electronic Devices I Onsite Course SYLLABS Credit hours: 4 Contact/Instructional hours: 50 (30 Theory Hours, 20 Lab Hours) Prerequisite(s) and/or Corequisite(s): Prerequisite:
Chapter 2 : Semiconductor Materials & Devices (II) Feb
Chapter 2 : Semiconductor Materials & Devices (II) 1 Reference 1. SemiconductorManufacturing Technology: Michael Quirk and Julian Serda (2001) 3. Microelectronic Circuits (5/e): Sedra & Smith (2004) 4.
B.Sc. Syllabus for Electronics under CBCS. Semester-I
Semester-I Title: Electronic Circuit Analysis Course Code: UELTC101 Credits: 4 Total Marks: 100 Internal Examination: 20 marks End Semester Examination: 80 marks Duration: 3 hours Validity of Syllabus:
EEE225: Analogue and Digital Electronics
EEE225: Analogue and Digital Electronics Lecture I James E. Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk Introduction This Lecture 1 Introduction Aims &
Course Objectives and Outcomes
Course Objectives and Outcomes Course Objectives and Outcomes 1. Course code and title: EE3019 Integrated Electronics 2. Number of AUs: 3 3. Course type: Elective 4. Course schedule: Lecture: 2 hours/week
Transistors and Applications
Chapter 17 Transistors and Applications DC Operation of Bipolar Junction Transistors (BJTs) The bipolar junction transistor (BJT) is constructed with three doped semiconductor regions separated by two
EE 230. Electronic Circuits and Systems. Randy Geiger 2133 Coover
EE 230 Electronic Circuits and Systems Randy Geiger 2133 Coover rlgeiger@iastate.edu 294-7745 Course Description Linear Systems Frequency domain characterization of electronic circuits and systems transfer
C H A P T E R 6 Bipolar Junction Transistors (BJTs)
C H A P T E R 6 Bipolar Junction Transistors (BJTs) Figure 6.1 A simplified structure of the npn transistor and pnp transistor. Table 6.1: BJT modes of Operation Mode EBJ CBJ Cutoff Reverse Reverse Active
EC5135: Analog Electronic Circuits EC3102: Analog Circuits
EC5135: Analog Electronic Circuits EC3102: Analog Circuits Introduction Nagendra Krishnapura Shanthi Pavan ec3102iitm@gmail.com Department of Electrical Engineering Indian Institute of Technology, Madras
Lecture 1. EE 215 Electronic Devices & Circuits. Semiconductor Devices: Diodes. The Ideal Diode
Lecture 1 EE 215 Electronic Deices & Circuits Asst Prof Muhammad Anis Chaudhary EE 215 Electronic Deices & Circuits Credit Hours: 3 1 Course Book: Adel S. Sedra and Kenneth C. Smith, Microelectronic Circuits,
NORTH MAHARASHTRA UNIVERSITY. F.Y. B. Sc. Electronics. Syllabus. Wieth effect from june2015
Syllabus Wieth effect from june2015 Paper- I, Semester I ELE-111: Analog Electronics I Unit- I:Introduction to Basic Circuit Components Definition and unit, Circuit Symbol, Working Principle, Classification
NORTH MAHARASHTRA UNIVERSITY, JALGAON
, JALGAON Syllabus for F.Y.B.Sc. Semester I and II ELECTRONICS (w. e. f. June 2012) F.Y. B. Sc. Subject Electronics Syllabus Structure Semester Code Title Number of Lectures ELE-111 Paper I : Analog Electronics
Carleton University. Faculty of Engineering, Department of Electronics ELEC 2507 / PLT 2006A - Electronic - I Winter Term 2016
Carleton University Faculty of Engineering, Department of Electronics ELEC 2507 / PLT 2006A - Electronic - I Winter Term 2016 Instructor: Name Sections Office/hours Email Prof. Ram Achar A&B 3036 MC Tue:
Electronics I Circuit Drawings. Robert R. Krchnavek Rowan University Spring, 2018
Electronics I Circuit Drawings Robert R. Krchnavek Rowan University Spring, 2018 Ideal Diode Piecewise Linear Models of a Diode Piecewise Linear Models of a Diode 1 r d Piecewise Linear Models of a Diode
Electronic Circuits for Mechatronics ELCT609 Lecture 1: Introduction
Electronic Circuits for Mechatronics ELCT609 Lecture 1: Introduction Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Course Team Contact Information Lecturer Teaching Assistants E-mail:
COURSE CODE COURSE NAME L-T-P-C YEAR OF INTRODUCTION EC
COURSE CODE COURSE NAME L-T-P-C YEAR OF INTRODUCTION EC 0 Network Theory --0-0 Prerequisite: Knowledge of Ohms Law, Kirchhoff s Laws, Current-voltage relationships in passive components, Complex numbers
0. Introduction to Microelectronic Circuits
0. Introduction to Microelectronic Circuits S. S. Dan and S. R. Zinka Department of Electrical & Electronics Engineering BITS Pilani, Hyderbad Campus January 18, 2016 Outline 1 Introduction 2 Course Contents
Two stage Cascade BJT Amplifier
Two stage Cascade BJT Amplifier N K Kaphungkui Assistant professor, Electronics & Communication Department, Dibrugarh University, Assam, India ---------------------------------------------------------------------***---------------------------------------------------------------------
Semiconductor Devices
Semiconductor Devices Modelling and Technology Source Electrons Gate Holes Drain Insulator Nandita DasGupta Amitava DasGupta SEMICONDUCTOR DEVICES Modelling and Technology NANDITA DASGUPTA Professor Department
Microelectronics Circuit Analysis and Design
Neamen Microelectronics Chapter 6-1 Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 6 Basic BJT Amplifiers Neamen Microelectronics Chapter 6-2 In this chapter, we will: Understand
Ideal Diode Summary. p-n Junction. Consequently, characteristics curve of the ideal diode is given by. Ideal diode state = OF F, if V D < 0
Course Contents ELE230 Electronics I http://www.ee.hacettepe.edu.tr/ usezen/ele230/ Dr. Umut Sezen & Dr. Dinçer Gökcen Department of Electrical and Electronic Engineering Hacettepe University and Diode
City University of Hong Kong. Course Syllabus. offered by Department of Physics with effect from Semester B 2017 / 2018
City University of Hong Kong offered by Department of Physics with effect from Semester B 2017 / 2018 Part I Course Overview Course Title: Course Code: Course Duration: Credit Units: Level: Proposed Area:
EE 320 L LABORATORY 9: MOSFET TRANSISTOR CHARACTERIZATIONS. by Ming Zhu UNIVERSITY OF NEVADA, LAS VEGAS 1. OBJECTIVE 2. COMPONENTS & EQUIPMENT
EE 320 L ELECTRONICS I LABORATORY 9: MOSFET TRANSISTOR CHARACTERIZATIONS by Ming Zhu DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING UNIVERSITY OF NEVADA, LAS VEGAS 1. OBJECTIVE Get familiar with MOSFETs,
An Analytical model of the Bulk-DTMOS transistor
Journal of Electron Devices, Vol. 8, 2010, pp. 329-338 JED [ISSN: 1682-3427 ] Journal of Electron Devices www.jeldev.org An Analytical model of the Bulk-DTMOS transistor Vandana Niranjan Indira Gandhi
EE105 Fall 2014 Microelectronic Devices and Circuits. NPN Bipolar Junction Transistor (BJT)
EE105 Fall 2014 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 utardja Dai Hall (DH) 1 NPN Bipolar Junction Transistor (BJT) Forward Bias Reverse Bias Hole Flow Electron
Microelectronic Circuits
SECOND EDITION ISHBWHBI \ ' -' Microelectronic Circuits Adel S. Sedra University of Toronto Kenneth С Smith University of Toronto HOLT, RINEHART AND WINSTON HOLT, RINEHART AND WINSTON, INC. New York Chicago
Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing
Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)
Fundamentals Of Semiconductor Devices Anderson Solution Manual
Fundamentals Of Semiconductor Devices Anderson Solution Manual We have made it easy for you to find a PDF Ebooks without any digging. And by having access to our ebooks online or by storing it on your
Simulation of MOSFETs, BJTs and JFETs. At and Near the Pinch-off Region. Xuan Yang
Simulation of MOSFETs, BJTs and JFETs At and Near the Pinch-off Region by Xuan Yang A Thesis Presented in Partial Fulfillment of the Requirements for the Degree Master of Science Approved November 2011
BME 3512 Bioelectronics Reading Assignments and Homework Problems Spring 2015
The BME 3512 Bioelectronics course is partitioned into essentially seven areas, divided into four tests: Test One - Principles of DC and AC Circuits Review of Basic Concepts and Principles of DC and AC
DESIGN OF CMOS BASED FM QUADRATURE DEMODULATOR USING 45NM TECHNOLOGY
DESIGN OF CMOS BASED FM QUADRATURE DEMODULATOR USING 45NM TECHNOLOGY 1 Pardeep Kumar, 2 Rekha Yadav, 1, 2 Electronics and Communication Engineering Department D.C.R.U.S.T. Murthal, 1, 2 Sonepat, 1, 2 Haryana,
Microelectronics Circuit Analysis and Design. MOS Capacitor Under Bias: Electric Field and Charge. Basic Structure of MOS Capacitor 9/25/2013
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor In this chapter, we will: Study and understand the operation and characteristics of the various types
ECEN474/704: (Analog) VLSI Circuit Design Fall 2016
ECEN474/704: (Analog) VLSI Circuit Design Fall 2016 Lecture 1: Introduction Sam Palermo Analog & Mixed-Signal Center Texas A&M University Announcements Turn in your 0.18um NDA form by Thursday Sep 1 No
Lecture #3 ( 2 weeks) Transistors
Spring 2015 Benha University Faculty of Engineering at Shoubra ECE-291 Electronic Engineering Lecture #3 ( 2 weeks) Transistors Instructor: Dr. Ahmad El-Banna 1 Agenda BJT Structure Basic Operation Transistor
Analogue Electronic Systems
Unit 47: Unit code Analogue Electronic Systems F/615/1515 Unit level 5 Credit value 15 Introduction Analogue electronic systems are still widely used for a variety of very important applications and this
Analog Circuits Prof. Jayanta Mukherjee Department of Electrical Engineering Indian Institute of Technology - Bombay
Analog Circuits Prof. Jayanta Mukherjee Department of Electrical Engineering Indian Institute of Technology - Bombay Week - 08 Module - 04 BJT DC Circuits Hello, welcome to another module of this course
BJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
SRM UNIVERSITY FACULTY OF ENGINEERING AND TECHNOLOGY DEPARTMENT OF TCE COURSE PLAN. Tech Park 13 th floor
SRM UNIVERSITY FACULTY OF ENGINEERING AND TECHNOLOGY DEPARTMENT OF TCE COURSE PLAN Course Code : TN00 Course Title : RF System Engineering Semester : II Semester Location : S.R.M.E.C Tech Park Faculty
Transistor Characteristics
Transistor Characteristics Topics covered in this presentation: Transistor Construction Transistor Operation Transistor Characteristics 1 of 15 The Transistor The transistor is a semiconductor device that
ECE 3040 Dr. Alan Doolittle.
ECE 3040 Dr. Alan Doolittle I have thoroughly enjoyed meeting each of you and hope that I have had a positive influence on your carriers. Please feel free to consult with me in your future work. If I can
INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATION ENGINEERING & TECHNOLOGY (IJECET)
INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATION ENGINEERING & TECHNOLOGY (IJECET) International Journal of Electronics and Communication Engineering & Technology (IJECET), ISSN 0976 ISSN 0976 6464(Print)
Experiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS
Experiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS 1. Objective: The objective of this experiment is to explore the basic applications of the bipolar junction transistor
BJT Characteristics & Common Emitter Transistor Amplifier
LAB #07 Objectives 1. To graph the collector characteristics of a transistor. 2. To measure AC and DC voltages in a common-emitter amplifier. Theory BJT A bipolar (junction) transistor (BJT) is a three-terminal
ESC201A Introducton to Electronics. G Rajshekhar Department of Electrical Engineering IIT Kanpur
ESC201A Introducton to Electronics G Rajshekhar Department of Electrical Engineering IIT Kanpur Acknowledgements Prof. Baquer Mazhari, EE department Prof. A. R. Harish, EE department Prof. S.S.K. Iyer,
Microelectronics Circuit Analysis and Design
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor Neamen Microelectronics, 4e Chapter 3-1 In this chapter, we will: Study and understand the operation
Bipolar Junction Transistors (BJTs)
C H A P T E R 6 Bipolar Junction Transistors (BJTs) Figure 6.1 A simplified structure of the npn transistor and pnp transistor. Table 6.1: BJT modes of Operation Mode Cutoff Active Saturation EBJ Reverse
EDC UNIT IV- Transistor and FET Characteristics EDC Lesson 9- ", Raj Kamal, 1
EDC UNIT IV- Transistor and FET Characteristics Lesson-9: JFET and Construction of JFET 2008 EDC Lesson 9- ", Raj Kamal, 1 1. Transistor 2008 EDC Lesson 9- ", Raj Kamal, 2 Transistor Definition The transferred-resistance
Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi
Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Module No # 05 FETS and MOSFETS Lecture No # 06 FET/MOSFET Amplifiers and their Analysis In the previous lecture
Power Amplifier Output Stage: BJT vs. FET
English 202c sec 15 Devin R. Ott Literature Review March 5 th 2008 Power Amplifier Output Stage: BJT vs. FET The bipolar junction transistor (BJT) was invented by Bell Labs in the late 1940 s and quickly
Qualitative Analysis of Darlington pair Based Modified Small-Signal Amplifier
Qualitative Analysis of Darlington pair Based Modified Small-Signal Amplifier Sachchida Nand Shukla 1, Ramendra Singh 2, Beena Pandey 3 Associate Professor, Dept. of Physics & Electronics, Dr. Ram Manohar
LESSON PLAN. Sub Code & Name: ME2255 Electronics and Microprocessors Unit : I Branch : ME Semester: IV UNIT I SEMICONDUCTORS AND RECTIFIERS 9
Unit : I Branch : ME Semester: IV Page 01 of 06 UNIT I SEMICONDUCTORS AND RECTIFIERS 9 Classification of solids based on energy band theory - Intrinsic semiconductors - Extrinsic semiconductors - P type
Electronics EECE2412 Spring 2017 Exam #2
Electronics EECE2412 Spring 2017 Exam #2 Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University 30 March 2017 File:12198/exams/exam2 Name: : General Rules:
EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT
EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT 1. OBJECTIVES 1.1 To practice how to test NPN and PNP transistors using multimeter. 1.2 To demonstrate the relationship between collector current
Developed Automated Vehicle Traffic Light Controller System for Cities in Nigeria
Journal of Advances in Science and Engineering 1 (2018), 19-25 Journal of Advances in Science and Engineering (JASE) Developed Automated Vehicle Traffic Light Controller System for Cities in Nigeria Ojieabu,
ES 330 Electronics II Fall 2016
ES 330 Electronics II Fall 2016 Sect Lectures Location Instructor Office Office Hours Email Tel 001 001 9:00 am to 9:50 am Wednesday 10:00 am to 10 :50 am 2001 2001 Dr. Donald Estreich Dr. Donald Estreich
GRAPHIC ERA UNIVERSITY DEHRADUN
GRAPHIC ERA UNIVERSITY DEHRADUN Name of Department: - Electronics and Communication Engineering 1. Subject Code: TEC 2 Course Title: CMOS Analog Circuit Design 2. Contact Hours: L: 3 T: 1 P: 3. Examination
ECE 440 Lecture 29 : Introduction to the BJT-I Class Outline:
ECE 440 Lecture 29 : Introduction to the BJT-I Class Outline: Narrow-Base Diode BJT Fundamentals BJT Amplification Things you should know when you leave Key Questions How does the narrow-base diode multiply
Electronic Component Applications
Western Technical College 10660124 Electronic Component Applications Course Outcome Summary Course Information Description Career Cluster Instructional Level Total Credits 2.00 Total Hours 60.00 Solid
Design and Simulation of Voltage-Mode and Current-Mode Class-D Power Amplifiers for 2.4 GHz Applications
Design and Simulation of Voltage-Mode and Current-Mode Class-D Power Amplifiers for 2.4 GHz Applications Armindo António Barão da Silva Pontes Abstract This paper presents the design and simulations of
BJT Characterization Laboratory Dr. Lynn Fuller
ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING BJT Characterization Laboratory Dr. Lynn Fuller 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035 Fax (585) 475-5041 Email:
Analog and Telecommunication Electronics
Politecnico di Torino ICT School Analog and Telecommunication Electronics A0 Course Introduction» Goals and contents» Course organization» Learning material» Reference system 15/03/2011-1 ATLCE - A0-2010
EEC 118 Spring 2010 Lab #1: NMOS and PMOS Transistor Parameters
EEC 118 Spring 2010 Lab #1: NMOS and PMOS Transistor Parameters Dept. of Electrical and Computer Engineering University of California, Davis March 18, 2010 Reading: Rabaey Chapter 3 [1]. Reference: Kang
Chapter #3: Diodes. from Microelectronic Circuits Text by Sedra and Smith Oxford Publishing
Chapter #3: Diodes from Microelectronic Circuits Text by Sedra and Smith Oxford Publishing Introduction IN THIS CHAPTER WE WILL LEARN the characteristics of the ideal diode and how to analyze and design
Communication Microelectronics ELCT508 (W17) Lecture 1: Introduction Dr. Eman Azab Assistant Professor Office: C
Communication Microelectronics ELCT508 (W17) Lecture 1: Introduction Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Course Team Lecturer Teaching Assistants Contact Information E-mail:
Chapter 7 Building Blocks of Integrated Circuit Amplifiers: Part D: Advanced Current Mirrors
1 Chapter 7 Building Blocks of Integrated Circuit Amplifiers: Part D: Advanced Current Mirrors Current Mirror Example 2 Two Stage Op Amp (MOSFET) Current Mirror Example Three Stage 741 Opamp (BJT) 3 4
SRM UNIVERSITY FACULTY OF ENGINEERING AND TECHNOLOGY SCHOOL OF ELECTRONICS AND ELECTRICAL ENGINEERING DEPARTMENT OF TCE COURSE PLAN
SRM UNIVERSITY FACULTY OF ENGINEERING AND TECHNOLOGY SCHOOL OF ELECTRONICS AND ELECTRICAL ENGINEERING DEPARTMENT OF TCE COURSE PLAN Course Code : TE1018 Course Title : Microwave Radio And Optical Fiber
Electronic Circuits - Tutorial 07 BJT transistor 1
Electronic Circuits - Tutorial 07 BJT transistor 1-1 / 20 - T & F # Question 1 A bipolar junction transistor has three terminals. T 2 For operation in the linear or active region, the base-emitter junction
THE SPICE BOOK. Andrei Vladimirescu. John Wiley & Sons, Inc. New York Chichester Brisbane Toronto Singapore
THE SPICE BOOK Andrei Vladimirescu John Wiley & Sons, Inc. New York Chichester Brisbane Toronto Singapore CONTENTS Introduction SPICE THE THIRD DECADE 1 1.1 THE EARLY DAYS OF SPICE 1 1.2 SPICE IN THE 1970s