Instructor: Aaron T. Ohta Office Hours: Mon 3:30 to 4:30 pm

Transcription

1 EE 323 Microelectronic Circuits I Lecture: MWF 2:30 to 3:20 pm, POST 127 Labs: Section 1 Tue 9:00 to 11:50 am, Holmes 358 Section 2 Thur 9:00 to 11:50 am, Holmes 358 Section 3 Tue 1:30 to 4:20 pm, Holmes 358 Instructor: Aaron T. Ohta Office Hours: Mon 3:30 to 4:30 pm Office: Holmes Hall 446 Wed 3:30 to 4:30 pm Tel: Thu 12:00 to 1:00 pm aohta@hawaii.edu (best way to contact me) Also available by appt. Subject to change Course Description: This course aims to introduce students to the basic elements of microelectronic circuits, including diodes, MOSFETs, and BJTs. Device structures, operating principles, and characteristics will be discussed, along with amplifier operation and circuit models. The laboratories will focus on the application of lecture materials, as well as introduce students to SPICE simulation software. General Course Outline: I. Operational amplifiers operation, configurations, applications II. Diodes physics, operation, characteristics III. MOSFETs physics, operation, characteristics, applications IV. BJTs physics, operation, characteristics, applications Grading Policy: Homework 25% ~14 assignments, drop lowest grade; no late homework is accepted Midterm 35% Wednesday, March 4 Final 40% Monday, May 11, 2:15 to 4:15 pm Grading is on a curve, unless the class average is above 80%, then a fixed scale will be used: A+ = 100% to 97%, A = 96% to 93%, A- = 92% to 90%, B+ = 89% to 87% B = 86% to 83%, B- = 82% to 80%, C+ = 79% to 77%, C = 76% to 73%, C- = 72% to 70%, D+ = 69% to 67%, D = 66% to 63%, D- = 62% to 60%, F = 59% or lower. Note: The laboratory class is graded separately. The laboratory is an important part of this class, as it gives concrete examples of the more abstract concepts discussed in lecture. Course References: Required textbook: A.S. Sedra & K.C. Smith, Microelectronic Circuits, 5 th edition. New York: Oxford University Press, ISBN: Lab textbook: K.C. Smith, Laboratory Explorations for Microelectronic Circuits, 4 th edition. New York: Oxford University Press, ISBN: Other references: R.T. Howe & C.G. Sodini, Microelectronics: An Integrated Approach. Upper Saddle River, New Jersey: Prentice Hall, ISBN: Prerequisites: EE 213 or consent. This course fulfills a Physical Sciences diversification requirement (DP). The laboratory fulfills a science Laboratory requirement (DY). Special Needs Students: Please notify me of any special requirements. I would be happy to work with you, and the KOKUA Program (Office for Students with Disabilities) to ensure reasonable accommodations in my course. KOKUA can be reached at or (voice/text) in room 013 of the Queen Lili'uokalani Center for Student Services. Note: Syllabus is subject to revision

2 Course Outline (Tentative): Week Topic Readings Assignment (due) 1 Jan. 12 Class intro Intro to amplifiers Ch. 1 None 2 Jan Jan Feb. 2 5 Feb. 9 6 Feb Feb Mar. 2 9 Mar Mar Mar Mar Apr Apr Apr Apr May 4 May 11 Lab: No labs this week No class on Mon Jan. 19 (MLK Jr. holiday) The ideal op amp, inverting op amp Noninverting op amp, applications Lab 1: Intro to PSPICE Difference amplifiers Integrators & differentiators Lab 2: The Inverting Amplifier The pn junction The ideal diode Lab 3: The Non-inverting Amplifier Modeling forward-bias Types of diodes Lab 4: A General Purpose Amplifier Topology No class Mon Feb. 16 (Pres. Day holiday) Types of diodes Lab 5: Frequency Effects The MOS capacitor MOSFET device structure & operation Lab 6: Diode Action / Midterm Midterm MOSFET device structure & operation Lab: No labs this week MOSFET circuits Lab 7: Diode Conduction The Forward Drop MOSFET small-signal operation & models MOSFET single-stage amplifier Lab 8: MOSFET: Device-Integrity Checking No class Mar. 23 to 27 (Spring Recess) Lab: No labs MOSFET internal capacitances MOSFET frequency response Lab 9: MOSFET: The Amplifier Function BJT device structure & operation BJT IV characteristics No class Fri Apr. 10 (Good Friday holiday) Lab 10: MOSFET: The Feedback-bias Topology BJT circuits at DC Lab 11: BJT: Component Familiarization BJT small-signal operation & models BJT single-stage amplifiers Lab 12: BJT: The BJT as an Amplifier Lab: Make-up (optional) Final Exam, 2:15 to 4:15 pm Ch. 2.1 to 2.3 HW 1 Ch. 2.4 to 2.8 HW 2 Prelab 2 Lab report 1 Ch. 3.7, 3.1, 3.2 HW 3 Prelab 3 Lab report 2 Ch. 3.3, 3.4 to 3.8 HW 4 Prelab 4 Lab report 3 Ch. 3.4 to 3.8 HW 5 Prelab 5 Lab report 4 Ch. 4.1 HW 6 Prelab 6 Lab report 5 Ch. 4.1, 4.2 HW 7 Midterm Ch. 4.3, 4.4, 4.5 HW 8 Prelab 7 Lab report 6 Ch. 4.6, 4.7 HW 9 Prelab 8 Lab report 7 Ch. 4.8, 4.9, 4.11 HW 10 Prelab 9 Lab report 8 Ch. 5.1, 5.2 HW 11 Prelab 10 Lab report 9 Ch. 5.3 to 5.5 HW 12 Prelab 11 Lab report 10 Ch. 5.6 to 5.9 HW 13 Prelab 12 Lab report 11 HW 14 Lab report 12

3

4 Course outline: Chapter 1 (1 week) Signals Amplifiers Circuit models Circuit Simulation Chapter 2: Op Amps (2 weeks) Ideal Inverting Non-inverting Difference Other effects Finite gain, BW Saturation Current limits Slew-rate Full-power BW Offset voltage Input bias, offset currents Integrators & differentiators Chapter 3: Diodes (3 weeks) The pn junction Ideal diode Forward-bias Reverse-bias Breakdown Modeling forward-bias Zener diodes Rectifiers Schottky-barrier diode Varactors Photodiodes LEDs MOSFETs (4 weeks) MOS capacitor MOSFET IV characteristics MOSFET circuits at DC MOSFET as an amplifier and switch Biasing Small-signal operation & models Single-stage amplifiers Internal capacitances Depletion-type MOSFET

5 BJTs (3 weeks) Device structure & operation IV characteristics BJT as an amplifier and switch BJT circuits at DC Biasing Small-signal operation & models Single-stage amplifiers Internal capacitances