Manufacturer Part Number. Module 4: CMOS SRAM Analysis

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1 Manufacturer Part Number description Module 4: CMOS SRAM Analysis

2 Manufacturer Device # 2 Some of the information is this report may be covered by patents, mask and/or copyright protection. This report should not be taken as an inducement to infringe on these rights Chipworks Inc. This report is provided exclusively for the use of the purchasing organization. It can be freely copied and distributed within the purchasing organization, conditional upon the accompanying Chipworks accreditation remaining attached. Distribution of the entire report outside of the purchasing organization is strictly forbidden. The use of portions of the document for the support of the purchasing organization s corporate interest (e.g., licensing or marketing activities) is permitted, as defined by the fair use provisions of the copyright act. Accreditation to Chipworks must be attached to any yportion of the reproduced information. Report Code: IPR-XXXX-XXX.1 LOA# Revision XX Published: XX

3 Manufacturer Device # 3 Table of Contents (all CMOS Modules) Module 1: CMOS Overview Analysis Package photographs Package X-rays Determination of technology node based on SEM cross section Module 2: CMOS FEOL Analysis SEM and TEM analysis of isolation, MOS transistors, PMD, and metal 1 Selected Materials analysis results Selected Materials analysis results Critical dimensions Module 3:CMOS BEOL Analysis SEM and TEM cross-sectional analysis of dielectrics, metals and vias. Materials analysis results for metals and dielectrics Critical dimensions Module 4:CMOS SRAM Analysis Plan-view analysis of minimum SRAM cell Cross-sectional SEM and TEM analysis of SRAM cell

4 Manufacturer Device # 4 Introduction The 45 nm XXXXXXXX was extracted from a XXXXXXX. [1] reference

5 Manufacturer Device # 5 Device Identification Manufacturer XXXXXXXXXX Foundry XXXXXXXXXX Part number XXXXXXXXXX Type XXXXXXXXXX Date code XXXXXXXXXX Package markings Package type XXXXXXXXXX XXXXXXXXXX XXXXXXXXXX BGA Package dimensions XX.X mm x XX.X mm x X.X mm thick Die markings XXXXXXXXXX Die size (die edge seal) 8.42 mm x 8.14 mm (65.5 mm 2 )

6 Manufacturer Device # 6 6T-SRAM Critical Dimension Feature Width (nm) Length (nm) 6T SRAM cell NMOS pull-down (T2, T5) ~ PMOS pull-up (T3, T4) ~83 52 NMOS access (T1, T6) ~180 59

7 Manufacturer Device # 7 6T-SRAM Schematic WL V DD BL T5 Access T3 T4 PMOS Pull-Down T1 NMOS Pull-Down T2 T6 Access BL

8 Manufacturer Device # 8 6T-SRAM at Metal 4 M4 V SS

9 Manufacturer Device # 9 6T-SRAM at Metal 3 WL V SS M3

10 Manufacturer Device # 10 6T-SRAM at Metal 2 V SS M2 WL BL V DD BL WL V SS

11 Manufacturer Device # 11 6T-SRAM at Metal 1 M1 V V DD SS BL WL WL BL V DD V SS

12 Manufacturer Device # 12 6T-SRAM at Poly poly 0.30 µm 2 T2 T3 T µm T1 T4 T µm

13 Manufacturer Device # 13 6T-SRAM at Diffusion P-well T2 N-well T3 P-well Si T6 STI 220 nm T2 T1 180 nm 83 nm T3 83 nm T4 180 nm T6 220 nm T5 T1 T4 T5

14 Manufacturer Device # 14 TEM SRAM Perpendicular to Bitline V DD cross-connect V DD W contact W butted contact T3 (T4) PMOS T3 (T4) PMOS

15 Manufacturer Device # 15 TEM T3 (T4) PMOS Pull-Up Transistors cross-connect M1 Cu V DD 64 nm NiPtSi T3 (T4) 27 nm NiPtSi T3 (T4) W butted contact 52 nm 52 nm

16 Manufacturer Device # 16 TEM NMOS T1 Access and T2 Pull-Down Transistors BL M1 Cu strap NiPtSi W contact T1 36 nm 34 nm 35 nm NiPtSi T2 59 nm NiPtSi 48 nm

17 Manufacturer Device # 17 TEM SRAM Gate Oxide SRAM poly ONO 2.2 nm Si

18 Manufacturer Device # 18 Statement of Measurement Uncertainty and Scope Variation Measurement Uncertainty Chipworks calibrates length measurements on its scanning electron microscopes (SEM), transmission electron microscope (TEM), and optical microscopes, using measurement standards that are traceable to the International System of Units (SI). Our SEM/TEM cross-calibration calibration standard was calibrated at the National Physical Laboratory (NPL) in the UK (Report Reference LR0304/E /SEM4/190). This standard has a 146 ± 2 nm (± 1.4%) pitch, as certified by NPL. Chipworks regularly verifies that its SEM and TEM are calibrated to within ± 2% of this standard, over the full magnification ranges used. Fluctuations in the tool performance, coupled with variability in sample preparation, and random errors introduced during analyses of the micrographs, yield an expanded uncertainty of about ± 5%. A stage micrometer, calibrated at the National Research Council of Canada (CNRC) (Report Reference LS ), 0010) is used to calibrate Chipworks optical microscopes. This standard has an expanded uncertainty of 0.3 µm for the stage micrometer s 100 µm pitch lines. Random errors, during analyses of optical micrographs, yield an expanded uncertainty of approximately ± 5% to the measurements. The materials analysis reported in Chipworks reports is normally limited to approximate elemental composition, rather than stoichiometry, since calibration of our SEM and TEM based methods is not feasible. Chipworks will typically abbreviate, using only the elemental symbols, rather than full chemical formulae, usually starting with silicon or the metallic element, then in approximate order of decreasing atomic % (when known). Elemental labels on energy dispersive X-ray spectra (EDS) will be colored red for spurious peaks (elements not originally in sample). Elemental labels in blue correspond to interference from adjacent layers. Secondary ion mass spectrometry (SIMS) data may be calibrated for certain dopant elements, provided suitable standards were available. Scope Variation Due to the nature of reverse engineering, there is a possibility of minor content variation in Chipworks standard reports. Chipworks has a defined table of contents for each standard report type. At a minimum, the defined content will be included in the report. However, depending on the nature of the analysis, additional information may be provided in a report as value-added material for our customers.

19 Manufacturer Device # 19 About Chipworks Chipworks is the recognized leader in reverse engineering and patent infringement analysis of semiconductors and electronic systems. The company s ability to analyze the circuitry and physical composition of these systems makes them a key partner in the success of the world s largest semiconductor and microelectronics companies. Intellectual property groups and their legal counsel trust Chipworks for success in patent licensing and litigation earning hundreds of millions of dollars in patent licenses, and saving as much in royalty payments. Research & Development and Product Management rely on Chipworks for success in new product design and launch, saving hundreds of millions of dollars in design, and earning even more through superior product design and faster launches. Contact Chipworks To find out more information on this report, or any other reports in our library, please contact Chipworks at Chipworks 3685 Richmond Road, Suite 500 Ottawa, Ontario K2H 5B7 Canada T F Web site: com info@chipworks.com Please send any feedback to feedback@chipworks.com

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