Field-Effect Transistors (FETs) 3.4 The p-channel MOSFET & COMS
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1 Field-Effec Trasisors (FETs 3.4 The p-chael MOSFET & COMS A p-chael ehaceme-ype MOSFET is fabricaed o a -ype subsrae wih p+ regios for he drai ad source, ad has holes as charge carriers. The deice operaes i he same maer as he -chael MOSFET excep ha ad S are egaie ad he V is egaie. i eers he source ermial ad leaes hrough he drai ermial. Complemeary MOS or CMOS employs MOS rasisors of boh polariies (-chael MOS ad p-chael MOS. The aailabiliy of COMS makes possible may powerful circuidesig possibiliies. A he prese ime CMOS is he mos useful of all he iegraed-circui MOS echologies for boh aalog ad digial circuis. While he NMOS rasisor is implemeed direcly i he p-ype subsrae, he PMOS rasisor is fabricaed i a specially creaed regio, kow as a well. The wo deices are isolaed from each oher by a hick regio of oxide ha fucios as a isulaor. Elecroic Circuis, ep. of Elec. Eg., The Chiese Uiersiy of Hog Kog, Prof. K.-L. Wu Lesso 5&6
2 Field-Effec Trasisors (FETs 3.5 Curre-Volage Characerisics Circui Symbol The arrowhead o he source ermial pois i he ormal direcio of curre flow. Therefore, i idicaes hree hi: (1 disiguishig he source from he drai, ( idicaes he polariy of he deice ad (3 desigaig he ermials. Three Regios: Cuoff regio < V 1 i k W L S Triode regio G > V, + S S > V i i W k L > V, 1 W k L ( G ( Sauraio regio + S S 1 S S < V Elecroic Circuis, ep. of Elec. Eg., The Chiese Uiersiy of Hog Kog, Prof. K.-L. Wu Lesso 5&6
3 Field-Effec Trasisors (FETs 3.6 Large Sigal Equiale Circuis Three Regios: Cuoff regio < V G Triode regio G > V, + S Sauraio regio S > V V S Triode G S < S or S < S V is a ruler G > V, + S S < V S G G Sauraio S S V S or S Elecroic Circuis, ep. of Elec. Eg., The Chiese Uiersiy of Hog Kog, Prof. K.-L. Wu Lesso 5&6
4 Field-Effec Trasisors (FETs 3.7 Chael-Legh Modulaio Oce he MOSFET eer sauraio mode he addiioal olage applied o he drai appears as a olage drop across he arrow depleio regio bewee he ed of he chael ad he drai regio. This olage acceleraes he elecros ha reach he ed of he chael ad sweeps hem across he depleio regio io he drai. Is effecie chael legh is reduced because elecros rael i a less ime. The pheomeo is kow as chael-legh modulaio. The chael-legh modulaio ca be aalyically accoued for by icorporaig a facor i he i- equaio Similar o he Early olage i a BJT, ad we will refer o i here as he Early olage. Typically, l0.005 o /V, ad correspodigly,v A is i he rage of 00 o 0 ols. Elecroic Circuis, ep. of Elec. Eg., The Chiese Uiersiy of Hog Kog, Prof. K.-L. Wu Lesso 5&6
5 I should be obious ha chael-legh modulaio makes he oupu resisace i sauraio fiie. efiig he oupu resisace as where resuls i which ca be approximaed by I or aleraiely As compared o V ro I A C for BJT Elecroic Circuis, ep. of Elec. Eg., The Chiese Uiersiy of Hog Kog, Prof. K.-L. Wu Lesso 5&6
6 Field-Effec Trasisors (FETs The Body Effec I IC circuis, he subsrae is usually coeced o he mos egaie power supply i a NMOS. The resulig reerse-bias olage bewee source ad body (V SB i a -chael deice will hae a effec o deice operaio. The reerse bias olage will wide he depleio regio. As a resul, V icreases. Temperaure Effecs Boh V ad k are emperaure sesiie. The magiude of V decrease by abou mv for eery 1 o C rise i emperaure. This decrease i V gies rise o a correspodig icrease i drai curre as emperaure is icrease. Howeer, because k decreases wih emperaure ad is effec is a domia oe, he oerall obsered effec of a emperaure icrease is a decrease i drai curre. 3.8 Pracical Cosideraios Breakdow ad Ipu Proecio As he olage o he drai is icreased, he p Jucio bewee drai ad subsrae suffers aalache breakdow a olages of 50 o 100V puch-hrough (abou 0 V Whe exceeds abou 50 V, gae oxide is broke dow resulig i permae damage o he deice. Elecroic Circuis, ep. of Elec. Eg., The Chiese Uiersiy of Hog Kog, Prof. K.-L. Wu Lesso 5&6
7 Field-Effec Trasisors (FETs Examples of C Aalysis Elecroic Circuis, ep. of Elec. Eg., The Chiese Uiersiy of Hog Kog, Prof. K.-L. Wu Lesso 5&6
8 Field-Effec Trasisors (FETs Examples of C Aalysis Elecroic Circuis, ep. of Elec. Eg., The Chiese Uiersiy of Hog Kog, Prof. K.-L. Wu Lesso 5&6
9 Field-Effec Trasisors (FETs Examples of C Aalysis We assume sauraio-regio operaio, sole he problem, ad he check he alidiy. Elecroic Circuis, ep. of Elec. Eg., The Chiese Uiersiy of Hog Kog, Prof. K.-L. Wu Lesso 5&6
10 Field-Effec Trasisors (FETs Examples of C Aalysis Elecroic Circuis, ep. of Elec. Eg., The Chiese Uiersiy of Hog Kog, Prof. K.-L. Wu Lesso 5&6
11 Field-Effec Trasisors (FETs 3.9 MOSFET as a Amplifier Calculaio of he C Bias Poi To operae he MOSFET as a amplifier, i mus be biased a a poi i he sauraio regio. The C drai curre ca be foud from I 1 k W L ( V where we hae egleced chael-legh modulaio. The load lie will be V V R I To esure sauraio-regio operaio, we mush hae V > V Furhermore, V has o be sufficiely greaer ha V o allow for he required sigal swig. The Sigal Curre i The rai Termial Nex, we apply o gae-o-source olage i V + 1 W k ( V L 1 W k ( V L 1 W + k L + + k W L ( V Elecroic Circuis, ep. of Elec. Eg., The Chiese Uiersiy of Hog Kog, Prof. K.-L. Wu Lesso 5&6
12 To reduce he oliear disorio iroduced by he MOSFET, he ipu sigal should be kep small so ha 1 W W k << k ( V L L resulig i << ( V Small-sigal codiio for MOSFET Therefore, W W i 1 k ( V + k ( V 14 4L L i d The MOSFET rascoducace I g m i V i d k W L ( V id g m Elecroic Circuis, ep. of Elec. Eg., The Chiese Uiersiy of Hog Kog, Prof. K.-L. Wu Lesso 5&6
13 Volage Gai Sice d i d R g m R which gies he olage gai as d g m R The mius sig idicaes ha he oupu sigal is 180 de ou of phase wih respec o he ipu sigal Elecroic Circuis, ep. of Elec. Eg., The Chiese Uiersiy of Hog Kog, Prof. K.-L. Wu Lesso 5&6
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