ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V. Item Symbol Condition Limit Unit
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1 FEATURES High Voltage Operation : VDS=V High Power :.5dBm Psat High Efficiency: Psat Power Gain f=1.6ghz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with V operation, and gives you higher gain. This new product is ideally suited for use in 1.5GHz W-CDMA & LTE design requirements as it offers high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Condition Rating Unit Operating-Voltage VDS 55 V Drain-Source Voltage VDS VGS=-8V 16 V Gate-Source Voltage VGS -15 V Total Power Dissipation Pt 97.8 W Storage Temperature Tstg -65 to +175 deg.c Channel Temperature Tch 2 deg.c RECOMMENDED OPERATING CONDITION Item Symbol Condition Limit Unit DC Input Voltage VDS < 55 V Forward Gate Current IGF RG=5 ohm < 12 ma Reverse Gate Current IGR RG=5 ohm > -3.9 ma Channel Temperature Tch < 18 deg.c Average Output Power Pave. < 47.5 dbm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Symbol Condition Limit Unit Min. Typ. Max. Pinch-Off Voltage Vp VDS=V IDS=27.2mA V Saturated Power Psat *1 VDS=V dbm Drain Efficiency hd *2 IDS(DC)=mA % Power Gain Gp *2 f=1.6ghz db Thermal Resistance Rth Channel to Case deg.c/w *1 : 1%-duty RF pulse (DC supply constant) *2 : Pout = 42.5dBm, CW modulation Signal (W-CDMA) at 52.5W P DC RoHS COMPLIANCE Yes 1
2 Output Power [dbm] Output Power [dbm] Drain Efficiency [%] RF fine tuned 54 Output Power vs. Frequency VDS=V, IDS(DC)=mA Output Power and Drain Efficiency vs. Input Power VDS=V, IDS(DC)=mA, f=1.6ghz Frequency [GHz] Pin=dBm Pin=24dBm Pin=28dBm Pin=32dBm Pin=34dBm Input Power [dbm] Pout (AB class) Pout (class B) Nd (class B) Pulse Signal (1%-duty, DC : constant) Test Fixture VGS VDS 2
3 MTTF (Hour) MTTF Calculation Estimated MTTF 1.E+1 1.E+9 1.E+8 1.E+7 1.E+6 1.E+5 1.E+4 1.E Channel Temerature (deg-c) Ea=1.6eV Confidence Level=9% Channel Temp (deg-c) MTTF (Hours) x x x 1 6 AF=exp[(-Ea/k)(1/T stress -1/T use ) MTTF use =MTTF stress *AF Where; AF: acceleration factor Ea: activation energy (1.6 ev) k: Boltzman s constant (8.62 x 1-5 ev/k) T stress : stress temperature (K) T use : use temperature (K) ESD characteristic Test Methodology Human Body Model (per JESD22-A114) Machine Model (per JEIA/ESD22-A115) Class 1A A 3
4 Scale for S IDS(DC)=mA, f=.5 to4.5ghz Zl = Zs = ohm Marker : 1.6GHz - Reference DATA - +j ±18 +j25 S11 S22 -j25 Scale for S21 +j1 -j +9 S12 -j1 S11 S22 S21 Freq. S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG S21 S12 4
5 - Application DATA - Doherty Amplifier drawing Vgg-Peak Vdd-Peak RF Output RF Input CS-3376C t=.8mm, r=3.3 Vgg-Main Vdd-Main Test Fixture Risho Kogyo CS-3376C r=3.5 (3.3 at 1GHz) t=.8mm 1 x2 Rohm MCR18EZPJ11 SOSHIN GSC3-HYB14 1 x2 Rohm MCR18EZPJ11 1pFx2 Murata GRM1882C1H1J 1pF MURATA TZY2Z1A1 1pF MURATA TZY2Z1A1 2pF Murata GQM1882C2A2RB 1.5pF Murata GQM1882C2A1R5B 1pFx2 MURATA TZY2Z1A1 2pF Murata GQM1882C2A2RB 5.1 Rohm MCR1EZPJ5R1 39 F NIPPON CHEMI-CON EKZE11ELL39MH15D 1pF Murata GRM2192C2A12J 1pF ATC ATC1B1RBW 1pFx2 ATC ATC1B1JW MURATA TZW4Z1R5A1 1pFx2 ATC ATC1B1JW 1 Rohm MCR3EZPJ11 1pF Murata GRM1882C1H1J 1pFx2 Murata GRM1882C1H1J 1.5G-IN 1pFx2 Murata GRM1882C1H1J 1pF Murata GRM188B11H12K.1 F Murata GRM188B31H14K 4.7 F Murata GRM55ER72A475K 1 Fx2 TDK C57X7R2E15M 4.7 F Murata GRM55ER72A475K 1.5G-OUT 5
6 ACLR [dbc] Drain Efficiency [%] ACLR [dbc] Drain Efficiency [%] Output Power [dbm], Gain [db] Drain Efficiency [%] Output Power [dbm] - Application DATA - Doherty Amplifier characteristics Test conditions : Vds=V, Ids-main=mA, Vgs-peak=-3.5V, Pulse Duty : 1% (12us/1us) f=1.488ghz Psat Pin=36dBm Pin=34dBm Pin=32dBm Pin=dBm Pin=28dBm Input Power [dbm] Frequency [MHz] Test conditions : Vds=V, Ids-main=mA, Vgs-peak=-3. 5V W-CDMA 2-carrier, 5MHz Spacing, PAR=7.8dB(.1%), f1=1485.5mhz, f2=149.5mhz DPD off DPD on +/-5MHz +/-1MHz Output Power Avg. [dbm] +/-5MHz +/-1MHz DPD off DPD on Ave.Pout=45dBm Carrier Center Freq. [MHz] +/-5MHz +/-1MHz +/-5MHz +/-1MHz
7 MK Package Outline Metal-Ceramic Hermetic Package 7
8 For further information please contact: 8
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MECXQMM-60W. 8.3 to 10.3 GHz GaN HEMT Power Amplifier
Pout (dbm), PAE(%) Functional Block Diagram Main Features 0.25µm GaN HEMT Technology 8.3 10.3 GHz full performances Frequency Range 60W Output Power @ Pin 40.5 dbm PAE > 33% @ Pin 40.5 dbm Linear Gain
RoHS COMPLIANT MGF4964BL is a RoHS compliant product. RoHS compliance is indicated by the letter G after the Lot Marking.
< Low Noise GaAs HEMT > DESCRIPTION The super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=2ghz NFmin.
QPD W, 28V, GHz, GaN RF Input-Matched Transistor
Product Overview The Qorvo is a W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance,
NPA100-D GHz GaN 20W Power Amplifier. Product Description: Key Features:
Product Description: The Nxbeam is a Ku-band high power GaN MMIC fabricated in 0.2um GaN HEMT on SiC. This part is ideally suited for satellite communications, point-to-point radios, and radar applications.
WPS GHz Linear Power Amplifier Data Sheet
Features 15.0 db Gain 36 dbm P1dB 48 dbm IP3 EVM < 2.5% at 29 dbm Pout Applications 802.16 WiMax 802.11 WLAN Wireless Communications Telecomm Infrastructure Prematch for Easy Cascade Pb Free Surface Mount
40W Power Packaged Transistor. GaN HEMT on SiC
Gain (db), Pout (dbm) & PAE (%) Id (A) Description 40W Power Packaged Transistor The is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband
QPA4501SR. 3 W, 28 V, GHz GaN PA Module. Product Overview. Key Features. Functional Block Diagram Applications. Ordering Information
Product Overview The is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications up to 3 W RMS at the device output covering frequency range from 4.4 to 5.0 GHz. The module is
QPD GHz, 110 W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information. Part No.
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.5 to 2.7 GHz. can deliver PAVG of 50 W at +48 V operation. ROHS
CHARACTERISTICS SYMBOL UNIT RATING. Drain-Source Voltage VDS V 15. Gate-Source Voltage VGS V -5. Drain Current IDS A 20
FEATURES BROAD BAND INTERNALLY MATCHED FET HIGH POWER P1dB= 46.5dBm at 7.1GHz to 7.9GHz HIGH GAIN G1dB= 6.5dB at 7.1GHz to 7.9GHz LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm Single Carrier
MAGX L00 MAGX L0S
Features GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260 C Reflow Compatible +50 V Typical Operation
QPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.
Product Description The is a discrete GaN on SiC HEMT which operates from 3.4 3.8 GHz. The device is a single stage matched power amplifier transistor. The can be used in Doherty architecture for the final
25W Power Packaged Transistor. GaN HEMT on SiC
25W Power Packaged Transistor GaN HEMT on SiC Description The is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety
INDEX MARK (Gate) Terminal No. For output stage of high power amplifiers in 1.Drain (output)
DESCRIPTION OUTLINE DRAWING is a MOS FET type transistor.+/-.5 specifically designed for VHF RF power 3.3+/-.5.+/-.15.+/-.5.+/-.5 amplifiers applications. FEATURES High Power Gain: Pout>11.5W, Gp>1dB@Vdd=7.V,f=175MHz
RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD7MVS1 Silicon MOSFET wer Transistor,17MHz,MHz,7W DESCRIPTION RD7MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. OUTLINE DRAWING 6.+/-.1.6+/-. 1 FEATURES
MAGX L00 MAGX L0S
Features GaN on SiC Depletion-Mode Transistor Technology Internally Matched Common-Source Configuration Broadband Class AB Operation RoHS* Compliant and 260 C Reflow Compatible +50 V Typical Operation
CGH55030F2 / CGH55030P2
Rev 3.2 April 2012 CGH55030F2 / CGH55030P2 25 W, C-band, Unmatched, GaN HEMT Cree s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high
5W X Band Medium Power Amplifier. GaN Monolithic Microwave IC
GaN Monolithic Microwave IC Description V+ The CHA6710-99F is a two stage Medium Power Amplifier operating between 8.0 and 12.75GHz. It typically provides 5W of saturated output power and 36% of power
transistor is available in a flange and pill package. Package Types: & PN s: CGH40045F & CGH40045P
Rev 4.0 - May 2015 CGH40045 45 W, DC - 4 GHz RF Power GaN HEMT Cree s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail,
MQ1470VP LDMOS TRANSISTOR
750W, 50V High Power RF LDMOS FETs Description The MQ1470VP is a 750-watt, high performance, internally matched LDMOS FET, designed for L band pulse application with frequencies 1.2 to 1.4GHz full band
Өjc Thermal Resistance Pulse Width=128uS, Duty=10% 0.2 C/W Bias Condition: Vdd=+65V, Idq=1000mA peak current (Vgs= -2.0 ~ -4.
Preliminary 0912GN-600 GENERAL DESCRIPTION The 0912GN-600 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18dB gain, 600 Watts of pulsed RF output
MMA C3 6-22GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vdd=5V P3dB: 19.5 dbm @Vdd=5V Gain: 14 db Vdd =3 to 6 V Ids = 130 ma Input and Output Fully Matched to 50 Ω Applications: Communication systems Microwave
18W X-Band High Power Amplifier. GaN Monolithic Microwave IC
CHA8611-99F GaN Monolithic Microwave IC Description V+ The CHA8611-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 18W of saturated output power and 43%
Efficiency (%) gtra364002fc_g1. Characteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR dbc
Thermally-Enhanced High Power RF GaN on SiC HEMT 0 W, 48 V, 30 30 MHz Description The is a 0-watt (PSAT) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular
RF3826TR13. 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz. Features. Applications. Ordering Information RF3826
9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose
QPD W / 220 W, 48 V, Asymmetric Doherty. Product Description. Applications. Ordering Information
Product Description The is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz. can deliver PAVG of 36 W at +48 V operation.
Ceramic Packaged GaAs Power phemt DC-12 GHz
Ceramic Packaged GaAs Power phemt DC-12 GHz DESCRIPTION AMCOM s is a discrete GaAs phemt that has a total gate width of 1.mm. It is in a ceramic BH package for operating up to 12 GHz. The BH package has
TGF2929-HM 100W, 28V, DC 3.5 GHz, GaN RF Power Transistor
General Description The Qorvo TGF2929-HM is a 0 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with Qorvo s proven QGaN25HV process, which features advanced