RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

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1 RoHS Compliance, Silicon MOSFET Power Transistor 5MHz,1W DESCRIPTION is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING.+/ /-.1 TYPE NAME 1.5+/-.1 FEATURES High power gain: Pout>.8W, High Efficiency: 65%typ. APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets..5+/-.1.8 MIN / /-.1.+/-.7.5+/-.7.+/-.7.1 MAX LOT No. Terminal No. 1 : GATE : SOURSE 3 : DRAIN UNIT : mm 3.9+/ RoHS COMPLIANT -11,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=5 C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=V 3 V VGSS Gate to source voltage Vds=V +/-1 V Pch Channel dissipation Tc=5 C 3.6 W Pin Input Power Zg=Zl=5Ω 6 mw ID Drain Current - 6 ma Tch Channel Temperature - 15 C Tstg Storage temperature - - to +15 C Rth j-c Thermal resistance Junction to case 3.5 C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=5 C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN TYP MAX IDSS Zero gate voltage drain current VDS=17V, VGS=V ua IGSS Gate to source leak current VGS=1V, VDS=V ua Vth Gate threshold Voltage VDS=1V, IDS=1mA V Pout Output power VDD=7.V, Pin=3mW W ηd Drain efficiency f=5mhz,idq=1ma % Note : Above parameters, ratings, limits and conditions are subject to change. MITSUBISHI ELECTRIC 1 Jan 6 1/6

2 RoHS Compliance, Silicon MOSFET Power Transistor 5MHz,1W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION Pch(W) 3 1 DRAIN DISSIPATION VS. AMBIENT TEMPERATURE On PCB(*1) *1:The material of the PCB Glass epoxy (t=.6 mm) On PCB(*1) with Heat-sink Ids(A) Vgs-Ids CHARACTERISTICS Vds=1V AMBIENT TEMPERATURE Ta( C) Vgs(V) Ids(A) Vds-Ids CHARACTERISTICS Vgs=1V Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Vgs=V Vgs=3V Ciss(pF) Vds VS. Ciss CHARACTERISTICS f=1mhz Coss(pF) Vds VS. Coss CHARACTERISTICS f=1mhz Crss(pF) 3 1 Vds VS. Crss CHARACTERISTICS f=1mhz MITSUBISHI ELECTRIC 1 Jan 6 /6

3 RoHS Compliance, Silicon MOSFET Power Transistor 5MHz,1W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS Po(dBm), Gp(dB), Idd(A) Gp Po η f=5mhz Vdd=7.V Idq=1mA ηd(%) Pout(W), Idd(A) Po Idd ηd Ta=5 C f=5mhz Vdd=7.V Idq=1mA ηd(%) Pin(dBm). 6 Pin(mW) Vdd-Po CHARACTERISTICS Ta=5 C f=5mhz Pin=3mW Idq=1mA Zg=ZI=5 ohm Po Idd.5 Po(W) Idd(A) Vdd(V). MITSUBISHI ELECTRIC 1 Jan 6 3/6

uF in parallel Note:Board material-glass epoxi substrate Micro strip line width=1.mm/5ohm,er:.8,t=.6mm INPUT/OUTPUT IMPEDANCE VS.

4 RoHS Compliance, Silicon MOSFET Power Transistor 5MHz,1W TEST CIRCUIT(f=5MHz) Vgg Vdd C1 11mm C 1uF,5V 18mm 5mm 68pF RF-IN.7kOHM mm 3mm 13mm mm 6pF 68OHM pf pf L1 6.5mm 5.5mm 3mm 3pF 17.5mm 5.5mm mm 6pF 1pF RF-OUT L1: Enameled wire 5Turns,D:.3mm,.6mmO.D C1,C: 1pF,.uF in parallel Note:Board material-glass epoxi substrate Micro strip line width=1.mm/5ohm,er:.8,t=.6mm INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 5MHz Zin* Zout* Zo=5Ω Vdd=7.V, Idq=1mA(Vgg adj.),pin=.3w 5MHz Zin* Zin* =3.11+j11.56 Zout*=11.6+j.7 5MHz Zout* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance MITSUBISHI ELECTRIC 1 Jan 6 /6

5 RoHS Compliance, Silicon MOSFET Power Transistor 5MHz,1W RD1MSU1 S-PARAMETER DATA Id=1mA) Freq. S11 S1 S1 S [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) RD1MSU1 S-PARAMETER DATA (@Vdd=1.5V, Id=1mA) Freq. S11 S1 S1 S [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) MITSUBISHI ELECTRIC 1 Jan 6 5/6

6 RoHS Compliance, Silicon MOSFET Power Transistor 5MHz,1W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. MITSUBISHI ELECTRIC 1 Jan 6 6/6

MITSUBISHI RF POWER MOS FET RD01MUS2. RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W

MITSUBISHI RF POWER MOS FET RD01MUS2. RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W RDMUS RoHS Compliance, Silicon MOSFET Power Transistor 5MHz,W DESCRIPTION RDMUS is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. This device have an interal monolithic