INDEX MARK (Gate) Terminal No. For output stage of high power amplifiers in 1.Drain (output)

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Norah Rogers
5 years ago
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1 DESCRIPTION OUTLINE DRAWING is a MOS FET type transistor.+/-.5 specifically designed for VHF RF power 3.3+/-.5.+/-.15.+/-.5.+/-.5 amplifiers applications. FEATURES High Power Gain: Pout>11.5W, Gp>1dB@Vdd=7.V,f=175MHz High Efficiency: 57%typ. (175MHz) APPLICATION.9+/-.15 INDEX MARK (Gate) Terminal No. For output stage of high power amplifiers in 1.Drain (output).source (GND) VHF band mobile radio sets. 3.Gate (input).+/-.5.9+/ /-.5 (.5) 1 3 Note ( ):center value UNIT:mm (.5) (.) (.).+/ /-.5 ABSOLUTE MAXIMUM RATINGS (Tc=5 C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to Source Voltage VGS=V 5 V VGSS Gate to Source Voltage VDS=V +/- V ID Drain Current A Pin Input Power Zg=Zl=5Ω W Pch Channel Dissipation Tc=5 C 5 W Tj Junction Temperature 15 C Tstg Storage Temperature - to +15 C Rthj-c Thermal Resistance Junction to Case.5 C/W Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=5 C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN. TYP. MAX. IDSS Zero Gate Voltage Drain Current VDS=17V, VGS=V ua IGSS Gate to Source Leak Current VGS=1V, VDS=V ua VTH Gate Threshold Voltage VDS=1V, IDS=1mA V Pout Output Power f=175mhz,vdd=7.v W ηd Drain Efficiency Pin=1.W,Idq=1.A % Load VSWR tolerance VDD=9.V,Po=1W(Pin Control) f=175mhz,idq=1.a,zg=5ω Load VSWR=:1(All Phase) Not destroy - Note: Above parameters, ratings, limits and conditions are subject to change. MITSUBISHI ELECTRIC REV. Aug. 1/

2 TYPICAL CHARACTERISTICS CHANNEL DISSIPATION Pch(W) DRAIN DISSIPATION VS. AMBIENT TEMPERATURE On PCB(*1) *1:The material of the PCB Glass epoxy (t=. mm) On PCB(*1) with Heat-sink Ids(A) 1 Vgs-Ids CHARACTERISTICS Ta=+5 C Vds=1V 1 1 AMBIENT TEMPERATURE Ta( C) Vgs(V) Ids(A) Vds-Ids CHARACTERISTICS Ta=+5 C 1 Vds(V) Vgs=7.5V Vgs=.V Vgs=5.5V Vgs=5.V Vgs=.5V Vgs=.V Vgs=3.5V Ciss(pF) Vds VS. Ciss CHARACTERISTICS Ta=+5 C f=1mhz Vds(V) Coss(pF) 1 1 Vds VS. Coss CHARACTERISTICS Ta=+5 C f=1mhz Vds(V) Crss(pF) Vds VS. Crss CHARACTERISTICS Ta=+5 C f=1mhz Vds(V) MITSUBISHI ELECTRIC REV. Aug. /

3 TYPICAL CHARACTERISTICS Po(dBm), Gp(dB), Idd(A) 3 1 Pin-Po Ta=+5 C f=175mhz Vdd=7.V Idq=1.A Po Gp η ηd(%) Pout(W), Idd(A) Pin-Po Po ηd Idd Ta=5 C f=175mhz Vdd=7.V Idq=1.A ηd(%) Pin(dBm) 5 1 Pin(mW) Po(W) Vdd-Po Ta=5 C f=175mhz Pin=.3W Icq=7mA Zg=ZI=5 ohm Idd Po 5 3 Idd(A) Ids(A) 1 Vgs-Ids CHARACTERISTICS Vds=1V Tc=-5~+75 C -5 C +75 C +5 C Vdd(V) Vgs(V) MITSUBISHI ELECTRIC REV. Aug. 3/

4 TEST CIRCUIT (f=175mhz) RF-in Copper board spring t=.1mm MITSUBISHI ELECTRIC REV. Aug. /

5 INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin* Zout* Zo=5Ω Vdd=7.V, Idq=1.A(Vgg adj.), Pin=1.W f=175mhz Zout* Zin*=.95-j7.73 Zout*=1.73-j1.1 f=175mhz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of output impedance MITSUBISHI ELECTRIC REV. Aug. 5/

6 S-PARAMETER DATA Id=9mA) Freq. S11 S1 S1 S [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) MITSUBISHI ELECTRIC REV. Aug. /

7 S-PARAMETER DATA Id=9mA) Freq. S11 S1 S1 S [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) MITSUBISHI ELECTRIC REV. Aug. 7/

8 Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Warning! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. MITSUBISHI ELECTRIC REV. Aug. /

RD30HVF1 Silicon MOSFET Power Transistor,175MHz,30W

RD30HVF1 Silicon MOSFET Power Transistor,175MHz,30W RD3HVF1 Silicon MOSFET Power Transistor,175MHz,3W DESCRIPTION RD3HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>3W, Gp>1.7dB