RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W

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Cameron Shaw
5 years ago
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1 Silicon MOSFET Power Transistor 3MHz,1W DESCRIPTION is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. FEATURES High power gain: Pout>1W, OUTLINE DRAWING 3.+/ /-. 9+/ / / /-. APPLICATION For output stage of high power amplifiers in HF band mobile radio sets. 1.3MIN.MAX deg MAX 1.+/-..+.1/ /-..+/-..+.1/-. PIN 1.Gate.Source 3.Drain UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc= C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage V VGSS Gate to source voltage +/- V Pch Channel dissipation Tc= C. W Tj Junction temperature C Tstg Storage temperature - to + C Rth-c Thermal resistance Junction to case. C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc= C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=V ua IGSS Gate to source leak current VGS=1V, VDS=V ua VTH Gate threshold voltage VDS=1V, IDS=1mA 1 - V Pout Output power VDD=1.V, Pin=.W, W ηd Drain efficiency f=3mhz, Idq=.A - % Load VSWR tolerance VDD=.V,Po=1W(PinControl) Idq=.A,Zg=Ω Load VSWR=:1(All Phase) No destroy - Note : Above parameters, ratings, limits and conditions are subject to change. MITSUBISHI ELECTRIC REV.1 1 May. 3 1/

2 Silicon MOSFET Power Transistor 3MHz,1W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION Pch(W) CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE Ids(A) 1 Vgs-Ids CHARACTERISTICS Vds=1V 1 1 AMBIENT TEMPERATURE Ta( C) 1 Vgs(V) Ids(A) Vds-Ids CHARACTERISTICS Vgs=1V Vgs=9V Vgs=V Vgs=7V Vgs=V Ciss(pF) 3 1 Vds VS. Ciss CHARACTERISTICS 1 Vgs=V 1 3 Vds VS. Coss CHARACTERISTICS Vds VS. Crss CHARACTERISTICS 1 1 Coss(pF) Crss(pF) MITSUBISHI ELECTRIC REV.1 1 May. 3 /

3 Silicon MOSFET Power Transistor 3MHz,1W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS Po(dBm), Gp(dB),Idd(A) 3 1 f=3mhz Vdd=1.V Idq=.A Gp Po ηd Idd 1 ηd(%) Pout(W) Idd(A) 1 Idd ηd Po f=3mhz Vdd=1.V Idq=.A 1 ηd(%) Pin(dBm) Pin(W) Vdd-Po CHARACTERISTICS Vgs-Ids CHARACTERISTICS 3 Ta= C f=3mhz Pin=.W Idq=.A Zg=ZI= ohm Po Vds=1V Tc=-~+7 C - C + C Po(W) Idd 3 Idd(A) Ids(A) +7 C Vdd(V) 1 Vgs(V) MITSUBISHI ELECTRIC REV.1 1 May. 3 3/

4 Silicon MOSFET Power Transistor 3MHz,1W EQUIVALENT CIRCUIT(f=3MHz) Vgg Vdd.KOHM L 33uF,V pf -pf 33uF,V 1KOHM L1-1pF C C RF-IN L3 1OHM L L RF-OUT pf 1/33pF pf 1pF /pf pf :1pF,.uF,.1uF in parallel C:7uF* in parallel L1:1Turns,I.Dmm,D1.mm UEW L:1Turns,I.Dmm,D1.mm UEW L3:9Turns,I.D.mm,D1.mm UEW L:Turns,I.D.mm,D1.mm UEW P=. L:Turns,I.D.mm,D1.mm UEW P=1 Note:Board material-glass epoxi substrate Micro strip line width=.mm/ohm,er:.7,t=1.mm Dimensions:mm MITSUBISHI ELECTRIC REV.1 1 May. 3 /

5 Silicon MOSFET Power Transistor 3MHz,1W S-PARAMETER DATA Id=mA) Freq. S11 S1 S1 S [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) MITSUBISHI ELECTRIC REV.1 1 May. 3 /

6 Silicon MOSFET Power Transistor 3MHz,1W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. MITSUBISHI ELECTRIC REV.1 1 May. 3 /

RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W

RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W RD1HHF1 Silicon MOSFET Power Transistor 3MHz,1W DESCRIPTION RD1HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING 5.+/-.3 7.+/-.5 11.+/-.3