MITSUBISHI RF POWER MOS FET RD06HVF1. RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
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1 RD6HVF1 DESCRIPTION RD6HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING FEATURES High power gain: Pout>6W, APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT 1 note: (1)Torelance of no designation means typical value. Dimension in mm. () :Dipping area note() PINS 1:GATE :SOURCE :DRAIN :FIN(SOURCE) RD6HVF1-11 is a RoHS compliant products. () RoHS compliance is indicate by the letter G after the lot marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) :Copper of the ground work is exposed in case of frame separation. RD6HVF1 MITSUBISHI ELECTRIC 1 Jan 6 1/8
2 RD6HVF1 ABSOLUTE MAXIMUM RATINGS (Tc=5 C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=V 5 V VGSS Gate to source voltage Vds=V +/- V Pch Channel dissipation Tc=5 C 7.8 W Pin Input power Zg=Zl=5Ω.6 W ID Drain current - A Tch Channel temperature - 15 C Tstg Storage temperature - - to +15 C Rth j-c Thermal resistance junction to case.5 C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=5 C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS LIMITS UNIT MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=V ua IGSS Gate to source leak current VGS=1V, VDS=V ua VTH Gate threshold Voltage VDS=1V, IDS=1mA V Pout Output power VDD=1.5V, Pin=.W, W ηd Drain efficiency f=175mhz, Idq=.A % Load VSWR tolerance VDD=15.V,Po=6W(Pin Control) f=175mhz,idq=.a,zg=5ω Load VSWR=:1(All Phase) No destroy - Note : Above parameters, ratings, limits and conditions are subject to change. RD6HVF1 MITSUBISHI ELECTRIC 1 Jan 6 /8
3 RD6HVF1 TYPICAL CHARACTERISTICS CHANNEL DISSIPATION Pch(W) 5 1 CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE Ids(A) 5 1 Vgs-Ids CHARACTERISTICS Ta=+5 C Vds=1V AMBIENT TEMPERATURE Ta( C) Vgs(V) Ids(A) 1 Vds-Ids CHARACTERISTICS Ta=+5 C Vgs=1V Vgs=9V Vgs=8V Vgs=7V Vgs=6V Ciss(pF) Vds VS. Ciss CHARACTERISTICS Ta=+5 C f=1mhz Vds(V) Vgs=5V 1 Vds(V) Vds VS. Coss CHARACTERISTICS Vds VS. Crss CHARACTERISTICS 1 8 Ta=+5 C f=1mhz 1 8 Ta=+5 C f=1mhz Coss(pF) 6 Crss(pF) 6 1 Vds(V) 1 Vds(V) RD6HVF1 MITSUBISHI ELECTRIC 1 Jan 6 /8
4 RD6HVF1 TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS Po(dBm), Gp(dB), Idd(A) 5 1 Ta=+5 C f=175mhz Vdd=1.5V Idq=.A Po Gp η ηd(%) Pout(W), Idd(A) Idd Po ηd Ta=5 C f=175mhz Vdd=1.5V Idq=.A ηd(%) Pin(dBm) Pin(W) Po(W) Vdd-Po CHARACTERISTICS Ta=5 C f=175mhz Pin=.W Idq=.A Zg=ZI=5 ohm Po Idd Idd(A) Ids(A),GM(S) 5 Vgs-Ids CHARACTORISTICS Vds=1V Tc=-5~+75 C -5 C +75 C +5 C Vdd(V) Vgs(V). 1.5 Vgs-gm CHARACTORISTICS Vds=1V Tc=-5~+75 C gm(s) C C +5 C Vgs(V) RD6HVF1 MITSUBISHI ELECTRIC 1 Jan 6 /8
5 RD6HVF1 TEST CIRCUIT(f=175MHz) Vgg Vdd C1 9.1kOHM L6 8.kOHM 1OHM C L1 L pf L L 175MHz RD6HVF1 L5 C RF-IN pf 8pF RF-OUT 1pF 7 5 5pF pf C1:pF 1uF in parallel C:pF* in parallel C:pF,uF in parallel Note:Board material-teflon substrate micro strip line width=.mm/5ohm,er:.7,t=1.6mm Dimensions:mm L1-L:6Turns,I.D1.6mm,D.mm enameled copper wire L:1Turns,I.D6mm,D1.6mm silver plateted copper wire L5:Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L6:Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RD6HVF1 MITSUBISHI ELECTRIC 1 Jan 6 5/8
6 RD6HVF1 INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=175mhz Zout* Zo=5ohm f=175mhz Zin* Zin, Zout f Zin Zout (MHz) (ohm) (ohm) Conditions j j1.5 Po=1W, Vdd=1.5V,Pin=.W RD6HVF1 MITSUBISHI ELECTRIC 1 Jan 6 6/8
7 RD6HVF1 RD6HVF1 S-PARAMETER DATA Id=5mA) Freq. S11 S1 S1 S [MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) RD6HVF1 MITSUBISHI ELECTRIC 1 Jan 6 7/8
8 RD6HVF1 Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD6HVF1 MITSUBISHI ELECTRIC 1 Jan 6 8/8
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